CN101549851A - Generation method of large-area submicron nonrandom structure graph - Google Patents
Generation method of large-area submicron nonrandom structure graph Download PDFInfo
- Publication number
- CN101549851A CN101549851A CNA2009100252355A CN200910025235A CN101549851A CN 101549851 A CN101549851 A CN 101549851A CN A2009100252355 A CNA2009100252355 A CN A2009100252355A CN 200910025235 A CN200910025235 A CN 200910025235A CN 101549851 A CN101549851 A CN 101549851A
- Authority
- CN
- China
- Prior art keywords
- structure graph
- nonrandom
- substrate
- generation method
- submicron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000012546 transfer Methods 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 45
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000032050 esterification Effects 0.000 claims description 3
- 238000005886 esterification reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000002077 nanosphere Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 4
- 238000001338 self-assembly Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010016825 Flushing Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011807 nanoball Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Images
Abstract
The invention discloses a generation method of large-area submicron nonrandom structure graph, which relates to the field of submicron-sized manufacture and is characterized in that: a layer of monolayer particles meeting the requirements on size and shape are chemically bonded or physically absorbed on the surface of a clean primary processing underlay at first; then a metal film layer is deposited and generated on the underlay and the monolayer particles; afterwards, a proper organic solvent is adopted to dissolve the monolayer particles and peel off the monolayer particles together with the metal film deposited on the surface thereof to form a metal mask graph on the surface of the primary processing underlay; and finally a proper method is adopted to transfer the metal mask graph onto an actually needed underlay to generate a nonrandom nanometer structure graph and remove a mask metal layer. The implementation of the generation method of large-area submicron nonrandom structure graph has the beneficial effects of flexible and controllable generation of the structure graph, broad selectivity of the underlay, easy realization of large-area generation, low cost, and no expansive processing devices.
Description
Technical field
The invention belongs to the micrometer/nanometer level and make the field, relate in particular to a kind of low-cost generation method that generates orderly submicrometer structure figure of large tracts of land that is used for.
Background technology
With photonic crystal, surface plasma, sub-wavelength structure is that the micro-nano photonic propulsion of representative can be broken through many traditional optical limit (for example diffraction limit) by theoretical proof, and shows many character out of traditional optical (for example negative refraction, super prism effect and Purcell effect etc.).The comparable excellent specific property that ordered structure had of these and electromagnetic wavelength will greatly strengthen the ability of human use's light and control light undoubtedly, and therefore can produce these structures becomes the key that the mankind can effectively utilize these character high-qualityly.For this reason, many sub-micron manufacturing technologies have been developed with it accordingly, such as electron-beam direct writing, relevant photoetching, nano impression, metal self assembly etc.In these sub-micron manufacturing technologies, electron-beam direct writing can accurately write out needed submicron figure in two dimensional surface, but the mode of this point by point scanning not only costs an arm and a leg, and speed is slow, is difficult to satisfy the low-cost requirement of making of large tracts of land; Also powerless for the three-dimensional manufacturing in addition.Relevant photoetching, nano impression and metal self assembly can be satisfied the requirement that the large-area submicron figure generates, but relevant photoetching and nano impression all can not prepare on non-regular stereochemical structures such as curved surface, and large-area preparation has extremely harsh requirement to the light source uniformity of relevant photoetching; The template of nano impression is very expensive, has increased the manufacturing cost of submicron figure undoubtedly; Although the metal self assembly can realize large tracts of land submicron figure making cheaply at any substrate surface, the submicron figure shape uniformity of this kind method preparation and the poor controllability of distributing homogeneity are not suitable for the generation of orderly submicron figure.Therefore, research and develop a kind of can be on any substrate large tracts of land, low cost and generate the technology of submicrometer structure figure in order, greatly improved human manufacturing capacity in the micro-nano field, also become the key that the micro-nano photonic propulsion really can practicability.
Summary of the invention
Defective in view of above-mentioned prior art, the objective of the invention is to: the generation method that proposes a kind of large-area submicron nonrandom structure graph, solve that structure graph is with high costs in generating, substrate shape and area be limited, and the structure graph distribution of shapes uniformity after generating, the problem of order poor controllability, improve human manufacturing capacity in the micro-nano field.
Above-mentioned purpose of the present invention, the technological means of its realization is:
The generation method of large-area submicron nonrandom structure graph is characterized in that comprising: step 1: make the individual layer particle that substrate surface pre-preparation one deck meets the requirement of structure graph size and shape just, and the space is exposed substrate surface between the adjacent two particle; Step 2: deposition generates metal film layer on described system substrate just and individual layer particle; Step 3: adopt the described individual layer particle of organic solvent dissolution, and will be deposited on its surperficial metallic film and peel off, form the metal mask figure at first system substrate surface; Step 4: described metal mask figure is transferred to the real substrate that needs, and need generates orderly submicrometer structure figure on the substrate real by suitable transfer producing process; Step 5: remove the metal mask layer.
Further, in first system substrate in the step 1 and the step 4 need substrate can be same substrate in fact, also can be two separate substrates, and two separate substrate shape is identical plane, curved surface or non-regular stereochemical structure; And the individual layer particle refers to dna molecular, organic micromolecule compound, macromolecular compound described in this step 1, and micron, one or more collocation in the nanosphere; The method of the particle of pre-preparation individual layer described in this step 1 comprises the chemical bonding or the physical absorption processing procedure of acid amides reaction, esterification, click chemistry, model ylid bloom action etc. in addition.
Further, the method for the metal film layer of generation described in the step 2 is the deposition manufacture process that comprises one of thermal evaporation, electron beam evaporation, magnetron sputtering, ald; Metallic film material is not limit, and can be Au, Ag, and Cu, Ti, Ni, materials such as Al are peeled off requirement and can be served as selection than big mask in the figure transfer process afterwards as long as satisfy.
Further, the method that the particle of individual layer described in the step 3 dissolves and the surface metal film is peeled off comprises solvent washing, supersonic oscillations or heating.
Further, needing the method for substrate surface generation submicrometer structure figure based on the metal mask figure in reality described in the step 4 is the transfer producing process that comprises one of reactive ion etching, inductively coupled plasma etching, electron cyclotron resonace etching, nano impression, mold; And the removal method of the metal level of mask described in the step 5 can be a wet etching, also can be dry etching, with quick removal mask metal and not destroy the real submicrometer structure figure that needs to have generated on the substrate be prerequisite.。
Implement the generation method of large-area submicron nonrandom structure graph of the present invention, its have 1. structure graph the generation flexible and controllable, 2. the substrate selectivity extensively, 3. large tracts of land generates and is easy to realize, and is and 4. with low cost, need not the beneficial effect of expensive process equipment.
Description of drawings
Fig. 1 is the schematic flow sheet of large-area submicron nonrandom structure graph generation method of the present invention;
Fig. 2 a, 2b generate the view and the A-A line segment cutaway view of method step one for the present invention;
Fig. 3 a, 3b generate the view and the B-B line segment cutaway view of method step two for the present invention;
Fig. 4 a, 4b generate the view and the C-C line segment cutaway view of method step three for the present invention;
Fig. 5 a, 5b generate the view and the D-D line segment cutaway view of method step four for the present invention.
The specific embodiment
For the inner characteristic and the beneficial effect of the generation method that makes large-area submicron nonrandom structure graph of the present invention is easier to understand, it is elaborated below in conjunction with embodiment and accompanying drawing thereof.
As shown in Figure 1, be the schematic flow sheet of the generation method of large-area submicron nonrandom structure graph of the present invention.As seen from the figure, the characterization step of this structure graph generation method comprises: the first system substrate of an at first prefabricated cleaning, and at the beginning of this, make the individual layer particle that substrate surface pre-preparation one deck meets the requirement of structure graph size and shape; Deposition generates metal film layer on described system substrate just and individual layer particle then; Then adopt the described individual layer particle of suitable organic solvent dissolution, and the metallic film of individual layer particle surface is peeled off in the lump, make substrate surface formation metal mask figure just; Adopt suitable transfer method to generate orderly submicrometer structure figure based on described metal mask figure at last, and the metal mask layer is removed at the substrate surface of actual needs.
Particularly, the present invention shown in Fig. 2 a, 2b generates the view and the A-A line segment cutaway view of method step one, and promptly chemical bonding or physical absorption one deck meet the individual layer particle 2 that the structure graph size and shape requires on first system substrate 1 surface of cleaning.At the first system substrate 1 of unlike material by different surface treatments, making it satisfy the requirement that individual layer particle 2 can form stable physical absorption or chemical bonding thereon gets final product, then the whole substrate 1 of system just is immersed in the chemical solution, method by chemical bonding or physical absorption (comprises dna molecular, organic micromolecule compound, macromolecular compound in the simple grain sublayer 2 that the substrate surface create-rule is arranged, and one or more collocation in the micro-/ nano ball etc. are used), and formed individual layer particle space is exposed substrate surface.In implementation process,, can select the particle of difformity and size to form required simple grain sublayer template according to different designing requirements; Substrate shape can be two dimension or three-dimensional plane, curved surface or non-regular stereochemical structure; And just make backing material can be dielectric material, semi-conducting material etc.And wherein the chemical bonding of pre-preparation or physical absorption comprise manufacturing method thereofs such as acid amides reaction, esterification, click chemistry, model ylid bloom action.
The present invention shown in Fig. 3 a, 3b generates the view and the B-B line segment cutaway view of method step two, promptly makes complete depositing metal films layer 3 on substrate 1 surface and individual layer particle 2 surfaces just.Deposition process can be deposit metal films processing procedures such as thermal evaporation, electron beam evaporation, magnetron sputtering and ald without limits in implementation process; And as the metal material of mask without limits, can be Au, Ag, Cu, Ti, Ni, materials such as Al require and can serve as selection than big mask in the figure transfer process afterwards as long as satisfy to peel off.
The present invention shown in Fig. 4 a, 4b generates the view and the C-C line segment cutaway view of method step three, promptly adopt the described individual layer particle 2 of suitable organic solvent dissolution, and with individual layer particle 2 together with being deposited on 3 flushings of its surperficial metallic film, peeling off, form metal mask figure 6 on first system substrate 1 surface.Wherein, organic solvent must dissolve this individual layer particle 2 fast, the metal level on it can be peeled off effectively, peels off mode without limits, can adopt solvent washing, sonic oscillation or heating etc.
The present invention shown in Fig. 5 a, 5b generates the view and the D-D line segment cutaway view of method step four, promptly the metal mask figure 6 that forms based on previous step adopts suitably that transfer method generates orderly submicrometer structure figure 5 on substrate 4 surfaces of actual needs, and original mask metal level is removed.Wherein, transfer method is according to figure that will generate and selected backing material, can be that reactive ion etching, inductively coupled plasma etching, electron cyclotron resonace etching, nano impression, mold etc. are wherein a kind of, as long as formed submicron nonrandom structure graph can effectively be transferred on the material that needs; The removal method of mask metal is unrestricted, can be wet etching, also can be dry etching, and not being damaged with the submicron nonrandom structure graph that keeps generating is benchmark.
As fully visible, what the present invention proposed is template with the simple grain sublayer on backing material, large tracts of land, low-cost preparation submicron nonrandom structure graph technology, with respect to other submicron figure technologies of preparing, generation flexible and controllable, substrate selectivity with structure graph is wide, large tracts of land generates and is easy to realize, and with low cost, need not the beneficial effect of expensive process equipment.
Above accompanying drawing and explanation thereof only provide as embodiment, and its embodiment has diversity.So all simple modification or equivalent transformations that above embodiment is carried out, can realize the design of this creation purpose, all should include within the protection domain of present patent application.
Claims (8)
1. the generation method of large-area submicron nonrandom structure graph is characterized in that comprising step:
Step 1: make the individual layer particle that substrate surface pre-preparation one deck meets the requirement of structure graph size and shape just, and the space is exposed substrate surface between the adjacent particles;
Step 2: deposition generates metal film layer on described system substrate just and individual layer particle;
Step 3: adopt the described individual layer particle of organic solvent dissolution, and will be deposited on its surperficial metallic film and peel off, form the metal mask figure at first system substrate surface;
Step 4: described metal mask figure is transferred to the real substrate that needs, and need generates orderly submicrometer structure figure on the substrate real by transfer producing process.
Step 5: remove the mask metal level.
2. the generation method of large-area submicron nonrandom structure graph according to claim 1, it is characterized in that: described in first system substrate described in the step 1 and the step 4 need substrate be same substrate or two separate substrates in fact, and two separate substrate shape are identical plane, curved surface or non-regular stereochemical structure.
3. the generation method of large-area submicron nonrandom structure graph according to claim 1, it is characterized in that: the particle of individual layer described in the step 1 refers to dna molecular, organic micromolecule compound, macromolecular compound, and micron, one or more collocation in the nanosphere.
4. the generation method of large-area submicron nonrandom structure graph according to claim 1, it is characterized in that: the method for the individual layer of pre-preparation described in step 1 particle comprises the chemical bonding or the physical absorption processing procedure of one of acid amides reaction, esterification, click chemistry, model ylid bloom action.
5. the generation method of large-area submicron nonrandom structure graph according to claim 1 is characterized in that: the method that generates metal film layer described in the step 2 comprises the deposition manufacture process of one of thermal evaporation, electron beam evaporation, magnetron sputtering, ald.
6. the generation method of large-area submicron nonrandom structure graph according to claim 1 is characterized in that: the method that dissolving of the particle of individual layer described in the step 3 and surface metal film thereof are peeled off comprises solvent washing, supersonic oscillations or heating.
7. the generation method of large-area submicron nonrandom structure graph according to claim 1 is characterized in that: the transfer producing process that comprises one of reactive ion etching, inductively coupled plasma etching, electron cyclotron resonace etching, nano impression, mold described in the step 4 in the real method that needs substrate surface to generate the submicrometer structure figure.
8. the generation method of large-area submicron nonrandom structure graph according to claim 1, it is characterized in that: the method for removing mask metal layer described in the step 5 is included as the method for one of wet etching or dry etching, is prerequisite not destroy the real submicrometer structure figure that needs to have generated on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100252355A CN101549851A (en) | 2009-02-25 | 2009-02-25 | Generation method of large-area submicron nonrandom structure graph |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100252355A CN101549851A (en) | 2009-02-25 | 2009-02-25 | Generation method of large-area submicron nonrandom structure graph |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101549851A true CN101549851A (en) | 2009-10-07 |
Family
ID=41154384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100252355A Pending CN101549851A (en) | 2009-02-25 | 2009-02-25 | Generation method of large-area submicron nonrandom structure graph |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101549851A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759638A (en) * | 2012-07-27 | 2012-10-31 | 上海华力微电子有限公司 | Method for testing metal layer by utilizing atomic force nanoprobe |
| CN103378218A (en) * | 2012-04-16 | 2013-10-30 | 南通同方半导体有限公司 | Method of making patterned substrate for nitride epitaxial growth |
| CN107043471A (en) * | 2017-03-22 | 2017-08-15 | 天津大学 | A kind of method that ultrasonic wave added processing prepares polymers multi-level pattern |
-
2009
- 2009-02-25 CN CNA2009100252355A patent/CN101549851A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378218A (en) * | 2012-04-16 | 2013-10-30 | 南通同方半导体有限公司 | Method of making patterned substrate for nitride epitaxial growth |
| CN102759638A (en) * | 2012-07-27 | 2012-10-31 | 上海华力微电子有限公司 | Method for testing metal layer by utilizing atomic force nanoprobe |
| CN107043471A (en) * | 2017-03-22 | 2017-08-15 | 天津大学 | A kind of method that ultrasonic wave added processing prepares polymers multi-level pattern |
| CN107043471B (en) * | 2017-03-22 | 2020-01-21 | 天津大学 | Method for preparing polymer multilevel pattern through ultrasonic-assisted treatment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101823685B (en) | Bionic micro/nano structure preparing method | |
| CN105492126A (en) | Ultrasonic spray coating of conducting and transparent films from combined graphene and conductive nano filaments | |
| CN103641059A (en) | Silicon-pillared metal film nano-structure array and preparation method thereof | |
| CN102173376A (en) | Preparation method for small silicon-based nano hollow array with orderly heights | |
| CN108374153B (en) | Method for growing large-area and highly-ordered nanoparticles through magnetron sputtering | |
| CN104671197B (en) | The preparation method of transferable orderly metal nano/micron casement plate | |
| CN101746714B (en) | Preparation method for metal nano structure array | |
| CN103199161B (en) | A kind of method preparing cone structure on GaP surface | |
| CN103641064B (en) | Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof | |
| CN101014421B (en) | Surface-structured substrate and production thereof | |
| CN108153108B (en) | Manufacturing method of large-size splicing-free micro-nano mold | |
| CN106811731A (en) | A kind of controllable method for preparing of tungsten disulfide | |
| CN101872730B (en) | Method for filling silicon through holes by using carbon nanotube clusters | |
| CN104733569A (en) | Manufacturing method of nano-sized patterned substrate | |
| CN109534684A (en) | A kind of etching glass and its etching technics based on nanoscale without flash-point anti-dazzle technology | |
| CN101770164A (en) | Impressing hard template in nanostructure | |
| CN101549851A (en) | Generation method of large-area submicron nonrandom structure graph | |
| CN102530845A (en) | Method for preparing triangular metal nano-pore array | |
| CN104992905B (en) | A kind of boron nitride substrate surface step lithographic method | |
| CN105405927A (en) | Method for preparing ordered silicon nanocluster based on combination of nanosphere etching technology and ion beam sputtering technology | |
| CN103030096A (en) | Silicon material with nano-structure surface and manufacturing method thereof | |
| Lee et al. | Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications | |
| CN109795979A (en) | The preparation method of nano-pore array structure with embedded metal ring | |
| CN103030107A (en) | Method of manufacturing three-dimensional nanometer-structured array | |
| CN106220237A (en) | A kind of preparation method of monolayer ordered silica nanosphere array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100907 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215125 NO.398, RUOSHUI ROAD, GAOJIAO DISTRICT, DUSHUHU, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 NO.398, RUOSHUI ROAD, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100907 Address after: 215123 Suzhou Industrial Park, Jiangsu, if waterway No. 398 Applicant after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215125 Jiangsu city of Suzhou province Dushu Lake Industrial Park No. 398 waterway if higher education Applicant before: Suzhou Nano Technique & Nano Bionic Research Inst. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20091007 |