CN103914395A - Address mapping method for memory device - Google Patents

Address mapping method for memory device Download PDF

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Publication number
CN103914395A
CN103914395A CN201310003789.1A CN201310003789A CN103914395A CN 103914395 A CN103914395 A CN 103914395A CN 201310003789 A CN201310003789 A CN 201310003789A CN 103914395 A CN103914395 A CN 103914395A
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address
logical
storage unit
circuit
ranges
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CN103914395B (en
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季茂林
路向峰
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Beijing Memblaze Technology Co Ltd
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Beijing Memblaze Technology Co Ltd
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Abstract

The invention provides an address mapping method for a memory device. The method comprises the following steps: receiving physical addresses for memory units from the memory units; mapping the physical addresses into a logical address; and sending the logical address to a host accessing the memory device.

Description

For the address mapping method of memory device
Technical field
The present invention relates to solid storage device (Solid Storage Device, SSD), more specifically, the present invention relates to for the mapping between logical address and the physics of memory device.
Background technology
Similar with mechanical type hard disk, solid storage device (SSD) is also large capacity, the non-volatile memory device for computer system.Solid storage device is generally using flash memory (Flash) as storage medium.High performance solid storage device is used to high-performance computer.
Memory target is one or more logical blocks (Logic Unit) of shared chip enable (CE, the Chip Enable) signal in nand flash memory encapsulation.Each logical block has logical unit number (LUN, Logic Unit Number).In nand flash memory encapsulation, can comprise one or more tube cores (Die).Typically, logical block is corresponding to single tube core.Logical block can comprise multiple planes (Plane).Multiple planes in logical block can parallel access, and multiple logical blocks fill order and report condition independently of one another in nand flash memory chip.Among " the Open NAND Flash Interface Specification(Revision3.0) " that can obtain from http://www.micron.com/ ~/media/Documents/Products/Other%20Documents/ONFI3_0Gold.a shx, provide the implication about target (target), logical block, LUN, plane (Plane), its part that is prior art.
Publication number is that the Chinese patent application of CN102177556A discloses a kind of flash translation layer (FTL) (FTL, Flash Translation Layer).The storage block of flash memory is formed virtual memory space by FTL, to make flash memories be shown as disc driver to main frame.FTL is by produce and maintain table in storer, with by the physical location being mapped to from the request to disc driver sector of main frame in the flash chip of solid-state drive.
Referring to Fig. 1, it has shown the example for the look-up table of the Parallel Unit of FTL.Because the logical block in flash chip (Logic Unit) can parallel mode access, thereby Parallel Unit can be a logical block.In logical block, can comprise multiple planes (Plane), Parallel Unit also can be a plane.And in example corresponding to Fig. 1, solid-state drive comprises 8 channels (channel) (also referred to as " passage ").On each passage, comprise multiple flash chips, can the access to the flash chip on each passage by 2 chip enable signal controls.In the example of Fig. 1, each chip is enabled (being called again " chip enable ") signal corresponding to a logical block, and each logical block has 2 planes.Thereby the solid-state drive of Fig. 1 comprises 32 Parallel Unit altogether.Each Parallel Unit is a plane.By the look-up table providing in Fig. 1, by the Parallel Unit numbering of 0-31, be mapped to specific passage, chip enable signal, logical block and plane.
But, in memory device, may comprise the flash chip with different capabilities, the passage of varying number.And in memory device, may comprise the circuit subcard with different configurations, on each subcard, there is the passage of varying number, the flash chip of varying number.This causes in physical configuration, and arranging of Parallel Unit is also non-linear with respect to circuit subcard or flash chip.Main frame needs to think that storage space is continuous.Thereby, need to be in the case of the physical configuration of memory device be variable, be provided for the mapping between logical address and the physical address of memory device.
Summary of the invention
According to a first aspect of the invention, provide the address mapping method for memory device, having comprised: received the logical address for memory device; Described logical address is mapped as to the physical address for storage unit; Access described storage unit based on described physical address.
Method according to a first aspect of the invention, is wherein used look-up table that described logical address is mapped as to the physical address for storage unit.
Method according to a first aspect of the invention, comprising: obtain the first quantity of the storage unit on first circuit board, obtain the second quantity of the storage unit on second circuit board; Obtain ranges of logical addresses based on described the first quantity and described the second quantity, the value of described logical address is within described ranges of logical addresses; Provide described ranges of logical addresses to main frame.
Method according to a first aspect of the invention, comprise: based on described the first quantity and described the second quantity, set up look-up table, for the each logical address in described ranges of logical addresses is mapped to the physical address for the storage unit on first circuit board or second circuit board.
Method according to a first aspect of the invention, comprising: the first quantity of obtaining the storage unit on first circuit board; Obtain ranges of logical addresses based on described the first quantity, the value of described logical address is within described ranges of logical addresses; Provide described ranges of logical addresses to main frame.
Method according to a first aspect of the invention, comprising: based on described the first quantity, set up look-up table, for the each logical address in described ranges of logical addresses is mapped to the physical address for the storage unit on first circuit board.
Method according to a first aspect of the invention, comprising: again obtain the 3rd quantity of the storage unit on described first circuit board, again obtain the 4th quantity of the storage unit on second circuit board; Obtain the second ranges of logical addresses based on described the 3rd quantity and described the 4th quantity, the value of described logical address is within ranges of logical addresses described in second; Provide described the second ranges of logical addresses to main frame; Based on described the 3rd quantity and described the 4th quantity, set up look-up table, for the each logical address in described the second ranges of logical addresses is mapped to the physical address for the storage unit on first circuit board or second circuit board.
Method according to a first aspect of the invention, comprising: the 5th quantity of obtaining the storage unit on tertiary circuit plate; Obtain the 3rd ranges of logical addresses based on described the first quantity, described the second quantity and described the 5th quantity, the value of described logical address is within ranges of logical addresses described in the 3rd; Provide described the 3rd ranges of logical addresses to main frame; Based on described the first quantity, described the second quantity and described the 5th quantity, set up look-up table, for the each logical address in described the 3rd ranges of logical addresses is mapped to the physical address for the storage unit on first circuit board, second circuit board or tertiary circuit plate.
Method according to a first aspect of the invention, comprising: the 6th quantity of again obtaining the storage unit on described first circuit board; Obtain the 4th ranges of logical addresses based on described the 6th quantity, the value of described logical address is within ranges of logical addresses described in the 4th; Provide described the 4th ranges of logical addresses to main frame; Based on described the 6th quantity, set up look-up table, for the each logical address in described the 4th ranges of logical addresses is mapped to the physical address for the storage unit on first circuit board.
Method according to a first aspect of the invention, described storage unit is tube core, logical block or the plane in memory chip.
Method according to a first aspect of the invention, wherein, described storage unit comprises multiple storage blocks, in the time that storage block in described storage unit is damaged, described logical address is mapped as for the mapping relations of the physical address of storage unit and is remained unchanged.
According to a second aspect of the invention, provide a kind of address mapping method for memory device, having comprised: received the physical address for described storage unit from storage unit; Be logical address by described physical address map; Described logical address is sent to the main frame of the described memory device of access.
Method according to a second aspect of the invention, wherein using look-up table is logical address by described physical address map.
The method of stating according to a second aspect of the invention, comprising: obtain the first quantity of the storage element on first circuit board, obtain the second quantity of the storage unit on second circuit board; Obtain ranges of logical addresses based on described the first quantity and described the second quantity, the value of described logical address is within described ranges of logical addresses; Provide described ranges of logical addresses to main frame.
Method according to a second aspect of the invention, comprise: based on described the first quantity and described the second quantity, set up look-up table, for each physical address map of the storage unit on first circuit board or second circuit board is arrived to the logical address in described ranges of logical addresses.
Method according to a second aspect of the invention, described storage unit is logical block, tube core or the plane in memory chip.
Method according to a second aspect of the invention, wherein, described storage unit comprises multiple storage blocks, in the time that the storage block in described storage unit is damaged, the mapping relations that are logical address by described physical address map remain unchanged.
Method according to a second aspect of the invention, comprising: again obtain the 3rd quantity of the storage unit on described first circuit board, again obtain the 4th quantity of the storage unit on second circuit board; Obtain the second ranges of logical addresses based on described the 3rd quantity and described the 4th quantity, the value of described logical address is within ranges of logical addresses described in second; Provide described the second ranges of logical addresses to main frame; Based on described the 3rd quantity and described the 4th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board or second circuit board is arrived to the logical address in described the second ranges of logical addresses.
Method according to a second aspect of the invention, comprising: the 5th quantity of obtaining the storage unit on tertiary circuit plate; Obtain the 3rd ranges of logical addresses based on described the first quantity, described the second quantity and described the 5th quantity, the value of described logical address is within ranges of logical addresses described in the 3rd; Provide described the 3rd ranges of logical addresses to main frame; Based on described the first quantity, described the second quantity and described the 5th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board, second circuit board or tertiary circuit plate is arrived to the logical address in described the 3rd ranges of logical addresses.
Method according to a second aspect of the invention, comprising: the 6th quantity of again obtaining the storage unit on described first circuit board; Obtain the 4th ranges of logical addresses based on described the 6th quantity, the value of described logical address is within ranges of logical addresses described in the 4th; Provide described the 4th ranges of logical addresses to main frame; Based on described the 6th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board is arrived to the logical address in described the 4th ranges of logical addresses.
According to a third aspect of the invention we, provide a kind of memory device, comprised multiple storage unit, storage unit interface circuit, address mapping circuit and processor, described processor will send to described address mapping circuit for the logical address of memory device; Described logical address is mapped as the physical address for storage unit by described address mapping circuit, and described physical address is sent to described storage unit interface circuit; Described storage unit interface circuit is accessed described storage unit based on described physical address.
Memory device according to a third aspect of the invention we, wherein said address mapping circuit is lut circuits.
Memory device according to a third aspect of the invention we, also comprises testing circuit, host interface, first circuit board and second circuit board; Described multiple storage unit is arranged on described first circuit board and described second circuit board; Described testing circuit obtains the first quantity of the storage element on described first circuit board, obtains the second quantity of the storage unit on second circuit board; Described host interface will obtain ranges of logical addresses based on described the first quantity and described the second quantity and send to main frame, and the value of wherein said logical address is within described ranges of logical addresses.
Memory device according to a third aspect of the invention we, wherein said processor is based on described the first quantity and described the second quantity, set up look-up table, and with address mapping circuit described in described look-up table initialization, described look-up table is for being mapped to the physical address for the storage unit on first circuit board or second circuit board by the each logical address in described ranges of logical addresses.
Memory device according to a third aspect of the invention we, wherein said the first quantity is different from described the second quantity.
Memory device according to a third aspect of the invention we, also comprises testing circuit, host interface, first circuit board; Described multiple storage unit is arranged on described first circuit board; Described testing circuit obtains the first quantity of the storage element on described first circuit board; The ranges of logical addresses obtaining based on described the first quantity is sent to main frame by described host interface, and the value of wherein said logical address is within described ranges of logical addresses.
Memory device according to a third aspect of the invention we, wherein said storage unit is logical block, tube core or the plane in memory chip.
Memory device according to a third aspect of the invention we, wherein said storage unit comprises multiple storage blocks, in the time that storage block in described storage unit is damaged, described logical address being mapped as for the mapping relations of the physical address of storage unit of described address mapping circuit remains unchanged.
Memory device according to a third aspect of the invention we, also comprises the second address mapping circuit, and wherein said storage unit interface circuit will send to described the second address mapping circuit from the physical address for described storage unit of storage unit; Described the second address mapping circuit is logical address by described physical address map, and described logical address is sent to described processor.
Memory device according to a third aspect of the invention we, also comprises testing circuit, and described testing circuit obtains the first quantity of the storage element on described first circuit board, obtains the second quantity of the storage unit on second circuit board; Described host interface will obtain ranges of logical addresses based on described the first quantity and described the second quantity and send to main frame, and the value of wherein said logical address is within described ranges of logical addresses; Described processor is based on described the first quantity and described the second quantity, set up second look-up table, and with the second address mapping circuit described in described second look-up table initialization, described second look-up table for by the physical address map of the storage unit on first circuit board or second circuit board to the logical address in described ranges of logical addresses.
Accompanying drawing explanation
In the time reading together with accompanying drawing, by reference to the detailed description of the embodiment to illustrating property below, will understand best the present invention and preferably use pattern and its further object and advantage, wherein accompanying drawing comprises:
Fig. 1 has shown in prior art the look-up table for the Parallel Unit of FTL;
Fig. 2 is the front elevation of memory device according to an embodiment of the invention;
Fig. 3 A is the front elevation of the circuit daughter board of memory device according to an embodiment of the invention;
Fig. 3 B-3E is the side view of memory circuit daughter board according to an embodiment of the invention;
Fig. 4 is the process flow diagram of setting up according to an embodiment of the invention the mapping of logical address and physical address;
Fig. 5 A-5D shows the look-up table shining upon between LBA and PBA according to an embodiment of the invention;
Fig. 6 is the process flow diagram of address mapping method according to an embodiment of the invention;
Fig. 7 shows the schematic diagram of the organizational form of the storage unit of memory device according to an embodiment of the invention;
Fig. 8 A-8B shows the figure of the address mapping relation of implementing embodiments of the invention;
Fig. 8 C-8F shows and implement the look-up table shining upon of the present invention between logic storage unit group address and physical memory cell group address;
Fig. 9 is the process flow diagram of storage unit group address mapping method according to an embodiment of the invention;
Figure 10 A-10D is according to the process flow diagram of the mapping of setting up logical address and physical address of multiple embodiment of the present invention; And
Figure 11 is the theory diagram of memory device according to an embodiment of the invention.
Embodiment
Fig. 2 is the front elevation of memory device according to an embodiment of the invention.Memory device shown in Fig. 2 comprises circuit motherboard 400.Circuit motherboard 400 is the circuit boards with the high card form of PCIE half, and it can be connected to computing machine by PCIE slot.On circuit motherboard 400, be furnished with circuit daughter board 410,420,430 and 440.In one embodiment, on circuit daughter board 410,420,430 and 440, be furnished with respectively flash chip 411-413,421-423,431-433 and 441-443, make circuit daughter board 410,420,430 and 440 provide memory capacity to memory device.Although figure 2 illustrates on circuit daughter board 410-440 each and place three flash chips, one of ordinary skill in the art also can place the flash chip of other quantity by recognizing on circuit daughter board 410-440, for example, on circuit daughter board 410, on the surface relative with the surface at flash chip 411-413 place, place flash chip.One of ordinary skill in the art also can be connected to circuit motherboard 400 by the circuit daughter board of varying number by recognizing.
Although figure 2 illustrates the memory device with PCIE interface that comprises flash chip, but one of ordinary skill in the art will recognize, it is only for example a kind of, the present invention is applicable to the various electronic with other functions, and can be coupled to computing machine by multiple interfaces mode, multiple interfaces includes but not limited to SATA(Serial Advanced Technology Attachment, Serial Advanced Technology Attachment), USB(Universal Serial Bus, USB (universal serial bus)), PCIE(Peripheral Component Interconnect Express, quick peripheral assembly interconnecting), SCSI(Small Computer System Interface, small computer system interface), IDE(Integrated Drive Electronics, integrated drive electronics) etc.And the present invention is also applicable to comprise the storage chip of flash memory other types in addition, for example, phase transition storage, Memister, ferroelectric memory etc.
On circuit motherboard 400, be also furnished with control circuit 660, in order to control the access to the flash chip on circuit daughter board 410,420,430 and 440, and process the interface command from computing machine.On circuit motherboard 400, be also furnished with the Memory such as DRAM(Dynamic Random Access, dynamic RAM) storer 662,664,666 and 668.Storer 662,664,666 and 668 can be coupled to control circuit 660.Control circuit 660 can be FPGA(Field-programmable gate array, field programmable gate array), ASIC(Application Specific Integrated Circuit, application specific integrated circuit) or the form of its combination.Control circuit 660 also can comprise processor or controller.In control circuit 660, can comprise one, two or more processor core, each processor core is for controlling or access the part or all of of multiple circuit subcards.Each processor core also can be used for multiple flash chips on access or control circuit subcard partly or entirely.
On circuit motherboard 400 as shown in Figure 2, be also furnished with connector 628 and 629.Can also will respectively circuit daughter board be connected to circuit motherboard 400 by connector 628 and 629.Thereby, on the circuit motherboard 400 with the high card form of PCIE half as shown in Figure 2, can connect nearly 6 circuit daughter boards.Circuit daughter board 410 is connected to circuit motherboard 400 by flexible PCB 640.Circuit daughter board 420 is connected to circuit motherboard 400 by flexible PCB 642.Circuit daughter board 430 is connected to circuit motherboard 400 by flexible PCB 644.Circuit daughter board 440 is connected to circuit motherboard 400 by flexible PCB 646.In a similar fashion, circuit daughter board is also connected to circuit motherboard 400 by flexible PCB via connector 628 or 629.
Multiple circuit daughter boards placement parallel to each other on circuit motherboard 400.The minor face of the long edge circuit motherboard 400 of multiple circuit daughter boards is placed, and the minor face of multiple circuit daughter boards is placed along the long limit of circuit motherboard 400.The minor face of multiple circuit daughter boards is placed along same straight line substantially.Circuit daughter board 410 is relative with 420 head and the tail, and the space of shared flexible PCB 640,642 formation, thereby forms circuit daughter board group.Circuit daughter board 430 is relative with 440 head and the tail, and the space of shared flexible PCB 644,646 formation, thereby forms circuit daughter board group.Similarly, be connected to connector 628 also from beginning to end relative with 629 circuit daughter board, and form circuit daughter board group.Between multiple circuit daughter boards and circuit motherboard, can there is space, in this space, can arrange other electronic components.
In a preferred embodiment, also provide heat abstractor, be delivered to memory device outside for the heat that the flash chip on multiple circuit daughter boards and/or control circuit 660 and/or storer 662,664,666 and 668 are produced.
Fig. 3 A is the front elevation of implementing the daughter board of the memory device of embodiments of the invention.In Fig. 3 A, more clearly show the circuit daughter board 410 in Fig. 2.Circuit daughter board 420 can have the physical aspect identical with circuit daughter board 410 with 430, but can have the memory capacity identical or different with circuit daughter board 410.In preferred example, the memory capacity of circuit daughter board 420 is two times of circuit daughter board 410.On circuit daughter board 410, be furnished with flash chip 411,412 and 413.In an example, in the unshowned one side of circuit daughter board 410, be also furnished with flash chip.Flash chip 411,412 and 413 can be the flash chip with same capability, can be also the flash chip with different capabilities.Flash chip on circuit daughter board 410 can be organized as multiple passages, comprises the flash chip of two or other quantity on each passage.Each passage is parallel, can transmit data or receive data from circuit motherboard 400 to circuit motherboard 400 simultaneously.On circuit daughter board 410, also can arrange multiple flash chips with other quantity.
In the situation that can holding flash chip 411,412 and/or 413, the size of circuit daughter board 410 is arranged as far as possible littlely, to can arrange the circuit daughter board of greater number on circuit motherboard 400, thereby improve the capacity of memory device.Owing to can arrange polylith circuit daughter board 410,420 and/or 430 on circuit motherboard, and circuit daughter board 410,420 and 430 can have the capacity differing from one another, thereby memory device can have the combination of multiple different memory capacity.Referring to table 1, when circuit daughter board 410,420 and 430 can have 192GB(Giga Byte) when two kinds of memory capacity of 394GB, and when can arrange maximum 6 circuit daughter boards 410,420 or 430 on circuit motherboard 400 time, can obtain having the memory device of multiple different memory sizes.Although in table 1, illustrate and comprised 4 configurations to the memory device of 6 circuit daughter boards,, also can on circuit motherboard 400, arrange 1-3 circuit daughter board, so that how different memory capacity to be provided.
Table 1 memory device, stores capacities chart
Thus, by the circuit daughter board of two kinds of different memory sizes is provided, obtain having the memory device of multiple different capabilities, can meet the demand of multiple different occasions.
And because circuit daughter board 410,420 has identical physical aspect with 430, thereby the installation of circuit daughter board 410,420 and 430 on circuit motherboard 400 is interchangeable, thereby simplify the process of installing, and, in the time that one of multiple circuit daughter boards break down, also can easily change.And, by with larger capacity and/or existing circuit daughter board on the circuit daughter board replacement circuit motherboard 400 of high-performance (access speed, reliability etc.) more, can easily realize renewal or upgrading to memory device.
One of ordinary skill in the art will recognize, the circuit daughter board with three kinds or more kinds of different memory sizes also can be provided, thereby the memory device with more kinds of memory capacity can be provided.For example, referring to table 2, (for example on circuit daughter board 410, can arrange the storage chip of varying number, 3-6 storage chip), thereby, in the situation that each storage chip has 64GB memory capacity, can provide there is respectively 192GB, 256GB, the circuit daughter board of 320GB and 384GB memory capacity.And by the multiple circuit daughter board with different memory sizes is provided, can obtain having the memory device of more kinds of different memory sizes.Obviously,, if the each storage chip on circuit daughter board 410 has different memory capacity, can provide the memory device with further multiple different memory capacity combination.
Table 2 circuit daughter board memory capacity table
Chip capacity Number of chips Subcard capacity
64GB 3 192GB
64GB 4 256GB
64GB 5 320GB
64GB 6 384GB
Fig. 3 B-3E is the side view of implementing the circuit daughter board 410 of the memory device of embodiments of the invention.In Fig. 3 B, on circuit daughter board 410, be furnished with storage chip 411,412,413,414,415 and 416.In the time that each storage chip provides 64GB memory capacity, the circuit daughter board in Fig. 3 B can provide the memory capacity of 384GB.In Fig. 3 C, on circuit daughter board 410, be furnished with storage chip 411,412,413,414 and 415.In the time that each storage chip provides 64GB memory capacity, the circuit daughter board in Fig. 3 C can provide the memory capacity of 320GB.In Fig. 3 D, on circuit daughter board 410, be furnished with storage chip 411,412,413 and 414.In the time that each storage chip provides 64GB memory capacity, the circuit daughter board in Fig. 3 D can provide the memory capacity of 256GB.In Fig. 3 E, on circuit daughter board 410, be furnished with storage chip 411,412 and 413.In the time that each storage chip provides 64GB memory capacity, the circuit daughter board in Fig. 3 E can provide the memory capacity of 192GB.
Next referring to Fig. 4, Fig. 4 is the process flow diagram of setting up according to an embodiment of the invention the mapping of logical address and physical address.Owing to can comprising the circuit daughter board 410,420,430 of varying number on circuit motherboard 400, and each circuit daughter board 410,420,430 can comprise the flash chip of varying number and/or memory capacity, thereby the memory capacity on circuit motherboard 400 can be different.After circuit motherboard 400 powers on, or after the configuration of circuit daughter board on circuit motherboard changes, set up the mapping management of logical address and physical address.In one embodiment, logical address is take the size of logical block (Logic Unit) as minimum unit, and physical address is also take logical block as minimum unit, makes logical address and physical address have relation one to one.In step 480, the quantity of the logical block on acquisition cuicuit daughter board.In an example, in the interface of circuit daughter board 410, provide 3 lead-in wires, every lead-in wire is by the configuration on the electric signal indicating circuit daughter board 410 of its transmission.For example, on circuit daughter board 410, comprise first passage, second channel and third channel, wherein on each passage, be furnished with 1 flash chip or 2 flash chips.One of ordinary skill in the art also can recognize the mode of the configuration of other indicating circuit daughter boards 410.Or these 3 lead-in wires can be indicated the quantity of the logical block of arranging on each passage, for example on first passage, be furnished with 8 logical blocks, on second channel, be furnished with 8 logical blocks, and on third channel, be furnished with 16 logical blocks.For example, in the interface of circuit daughter board 410, provide 2 lead-in wires, it can transmit " 00 ", " 01 ", " 10 " and " 11 " four kinds of different states, a kind of customized configuration of each condition indication circuit daughter board 410.On circuit motherboard 400, comprise circuit daughter board 410, and on the configuration information indicating circuit daughter board 410 of circuit daughter board 410, comprise 3 passages, 3 passages include in the situation of 16 logical blocks, and the quantity that can obtain the logical block of arranging on circuit motherboard 400 is 48.In another example, circuit motherboard 400 comprises circuit daughter board 410 and 420, on circuit daughter board 410, comprise 24 logical blocks, and on circuit daughter board 420, comprise 48 logical blocks, thereby by the number of logic cells summation to each circuit daughter board, the quantity that can obtain the logical block of arranging on circuit motherboard 400 is 72, and can obtain the distribution of these logical blocks on circuit daughter board 410 and 420.
In step 482, computational logic address realm.According to the quantity of the logical block having obtained, can determine the upper limit of the storage space take logical block as least unit of circuit motherboard 400, offer the upper limit of the logical address space of main frame using this upper limit as circuit motherboard 400 or memory device.In the time that circuit motherboard 400 comprises 24 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-23; In the time that circuit motherboard 400 comprises 48 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-47.
In step 484, the ranges of logical addresses calculating is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.---for example register---makes main frame can pass through the access to this register in an example, the ranges of logical addresses calculating to be stored to specific memory location, and knows the memory capacity that memory device has.In the time that memory device comprises 48 logical blocks, inform that to main frame the ranges of logical addresses take logical block as least unit of memory device is 0-47.In an example, the ranges of logical addresses providing to main frame is using other unit as least unit, for example, and using storage block, memory page or sector as least unit.The quantity of storage block, memory page or sector can be the multiple of number of logic cells.
In step 486, set up the two-way mapping table between logical address and physical address.In an embodiment according to the present invention, logical address space and physical address space shine upon one by one.In an example, when logical address space is during using logical block as least unit, logical address space and logical block take flash chip obviously have mapping relations one by one as the physical address space of least unit.In another example, when main frame is during using storage block, memory page or sector as least unit accessing storage device, continuous multiple storage blocks, memory page or sector is organized as and has the size that same logical block is identical in logic, thereby form logical address using logical block as least unit, thereby make logical address space and logical block take flash chip obviously there are mapping relations one by one as the physical address space of least unit.
Fig. 5 A-5D show according to the embodiment of the present invention in LBA(LBA (Logical Block Addressing), Logic Block Address) with PBA(physical block address, Physical Block Address) between the look-up table that shines upon.In Fig. 5 A-Fig. 5 D, main frame is take storage block as least unit accessing storage device.And the logical block of flash chip comprises multiple storage blocks.Thereby, in an embodiment according to the present invention, ignore some low levels of LBA, obtain the logical address take logical block as least unit, and also ignore the some low levels in PBA, as the physical address take logical block as least unit.The look-up table providing by Fig. 5 A-5D is set up one-to-one relationship between logical address and physical address.Also will will be appreciated that, the look-up table of Fig. 5 A-5D can be two-way, both can pass through logical address, obtains corresponding physical address; Also can pass through physical address, obtain corresponding logical address.Although the PBA arranging according to " passage ", " chip enable ", " logical block " and " all the other positions " has been shown in Fig. 5 A-Fig. 5 D, one of ordinary skill in the art will recognize, it is only for giving an example, the arrangement mode of PBA is not limited to this, for example, PBA also can arrange according to the mode of " chip enable ", " logical block ", " passage " and " all the other positions ".And, included one or more planes (Plane) in all right description logic of PBA unit.
Referring to Fig. 5 A, memory device comprises 4 passages, control, and each chip enable signal can be controlled two logical blocks on each passage by 4 chip enable signal.Thereby memory device provides 32 logical blocks.When take logical block as least unit, main frame is 0-31 by the logical address space of knowing memory device.It is pointed out that storage block, memory page or sector that main frame can inside, access logic unit, but the content that its look-up table that to be not Fig. 5 A-5D provide is concerned about.Get back to Fig. 5 A, for example, the LBA that main frame provides is " 4[X] ", and wherein " 4 " represent the logical address take logical block as least unit, and " [X] " represents storage block, memory page or the sector of logical block inside.By the look-up table of Fig. 5 A, logical address " 4 " or LBA " 4[X] " are mapped to passage 0, chip enable 2, logical block 0.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 5 A provide is concerned about.And, a part for storage block, memory page or the sector of storage unit inside, be used to redundant storage piece, memory page or sector, make in the time of the storage block of storage unit inside, memory page or sector corruption, without the mapping relations that change in look-up table, because " [X] " represents storage block, memory page or the sector of logical block inside, and the content that its look-up table that to be not Fig. 5 A provide is concerned about.
Referring to Fig. 5 B, memory device comprises 4 passages, wherein 2 chip enable signal of passage 0 use are controlled (reason is to have less flash chip), and passage 1-3 all controls by 4 chip enable signal, and two logical blocks of each chip enable signal control.Thereby memory device provides 28 logical blocks.When take logical block as least unit, main frame is 0-27 by the logical address space of knowing memory device.By the look-up table of Fig. 5 B, logical address " 4 " or LBA " 4[X] " are mapped to passage 1, chip enable 0, logical block 0.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 5 B provide is concerned about.
Referring to Fig. 5 C, memory device comprises 4 passages, control, and each chip enable signal can be controlled two logical blocks on each passage by 4 chip enable signal.Thereby memory device provides 32 logical blocks.When take logical block as least unit, main frame is 0-31 by the logical address space of knowing memory device.The look-up table of Fig. 5 C provides the mapping relations different from the look-up table of Fig. 5 A.By the look-up table of Fig. 5 C, logical address " 5 " or LBA " 5[X] " are mapped to passage 1, chip enable 2, logical block 1.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 5 C provide is concerned about.And in Fig. 5 A, just logical address " 5 " or LBA " 5[X] " are mapped to passage 0, chip enable 2, logical block 1.
Referring to Fig. 5 D, memory device comprises 4 passages, wherein 2 chip enable signal of passage 1 use are controlled (reason is to have less flash chip), and passage 0,2 and 3 is all controlled by 4 chip enable signal, and two logical blocks of each chip enable signal control.Thereby memory device provides 28 logical blocks.When take logical block as least unit, main frame is 0-27 by the logical address space of knowing memory device.By the look-up table of Fig. 5 D, logical address " 4 " or LBA " 4[X] " are mapped to passage 0, chip enable 2, logical block 0.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 5 D provide is concerned about.
Although provide the mapping relations between specific logical address and physical address in Fig. 5 A-Fig. 5 D, one of ordinary skill in the art will recognize, have multiple other mapping mode between logical address and physical address.Because logical address space and physical address space are one to one, by being each address in logical address space, distribute uniquely a physical address in physical address space, one of ordinary skill in the art are by the various ways that obtains shining upon one by one between logical address and physical address.
The look-up table of Fig. 5 A-Fig. 5 D can be implemented as lut circuits.Circuit daughter board configuration on circuit motherboard 400 does not change, lut circuits is without change.
Then referring to Fig. 6, Fig. 6 is the process flow diagram of address mapping method according to an embodiment of the invention.In step 680, receive order.In an example, order is the order for accessing storage device from main frame, carries or otherwise indicate the logical address for accessing storage device in order.And in another example, order comes from and the data of reading need to be offered to main frame from memory device, in order, carry or indicate the physical address of institute's sense data.In another example still, there is mistake in the flash chip that order comes from memory device, carries or indicate the physical address that occurs wrong position in order.The concrete meaning of these orders is not intended to limit protection scope of the present invention, but explanation exists the order of various ways and/or purposes, need to shine upon physical address or logical address wherein.
In step 682, the direction of the address mapping that judgement will be carried out, is the mapping from logical address to physical address, or the mapping from physical address to logical address.Can form and/or purposes based on order judge, also can ad hoc structure or coded portion based in order judge.
If physical address map is arrived to logical address, for example, order comes from and the data of reading need to be offered to main frame from memory device, so, proceeds to step 684, based on carrying in order or obtaining logical address by the indicated physical address of order.In an example, can be logical address by physical address map by the look-up table being provided as Fig. 5 A-Fig. 5 D.In step 686, operate according to the logical address obtaining.For example, come from and need to, by offering main frame from the data of reading memory device, logical address be sent to main frame together with the data of reading in order.In another example, the flash chip that comes from memory device in order occur wrong, logical address and/or error message are offered to main frame.
If logical address is mapped to physical address, for example, order is the order for accessing storage device from main frame, so, proceeds to step 688, based on carrying in order or obtaining physical address by the indicated logical address of order.Can logical address be mapped as to physical address by the look-up table being provided as Fig. 5 A-Fig. 5 D.In step 690, according to the physical address access flash chip obtaining.For example, according to the order from main frame, data are write to flash chip with the physical address that obtains, or by the physical address obtaining sense data from flash chip.
In step 692, whether the number of logic cells on testing circuit motherboard 400 changes.The variation of number of logic cells, for example comes from and inserts circuit daughter board 410 to circuit motherboard 400, removes circuit daughter board 410 etc. from circuit motherboard 400.If the quantity of logical block changes, the step 480 providing in Fig. 4 is provided, again obtain number of logic cells, and set up the mapping table between logical address and physical address.If number of logic cells does not change, without the mapping table changing between logical address and physical address, and proceed to step 680, to wait for the reception to next order.
Fig. 7 shows the schematic diagram of the organizational form of the storage unit of memory device according to another embodiment of the present invention.Logical block 460-472 in memory device is organized as to storage unit group.Logical block be in flash chip can independent fill order and the storage unit of report condition.For example, logical block can be a tube core in flash chip.In other configurations, logical block also can comprise multiple tube cores.Each storage unit group comprises N logical block, and wherein L logical block is used for storing user data, and M logical block is used for redundant data, and N=L+M, N, L and M are natural number.One of ordinary skill in the art, by the quantity of recognizing by adjusting L and M, can provide different fault-tolerant abilitys.For example, in the time of L=M=1, in each storage unit group, 1 logical block is used for storing user data, and another 1 logical block is for store backup data, in the time that mistake appears in user data, can utilize Backup Data to recover to occur wrong user data.In another example, L=7, and M=1, adopt parity checking mode provide protection for user data.Also can adopt other fault-tolerant encoding mode to improve the reliability of memory device.Control circuit 660 is controlled storage unit group and the wherein operation of each logical block, and the EDC error detection and correction of the data to storage unit group is also implemented by control circuit 660.
In a preferred embodiment, N logical block of formation storage unit group is positioned at same flash chip.Make in the time of storage unit group generation irrecoverable error, can less cost remove or replace the wrong flash chip of appearance.In another embodiment, form N logical block of storage unit group from multiple or N circuit daughter board (410-440), when making the some logical block faults in storage unit group or will using up serviceable life, can realize reparation by changing circuit daughter board (410-440).
By logical block being organized as to storage unit group, and take storage unit group as unit storage user data and redundant data, can improve the reliability of memory device.And multiple logical blocks can concurrent access, thereby, write the readwrite performance that can not affect memory device with sense data take storage unit group as unit.One of ordinary skill in the art will recognize, also multiple planes or die groupings can be woven to storage unit group.
But in an example, main frame is with continuous linear address space accessing storage device 400, thereby need to, by be mapped to each storage unit group from the linear address of main frame, be converted to storage unit group address by linear address.Fig. 8 A shows the schematic diagram of address mapping relation according to an embodiment of the invention.In the disclosed embodiment, memory device 400 comprises m storage unit group, and each storage unit group comprises n data block.Memory device 400 presents the linear address space with 0 ~ (nm-1) (take 4KB/8KB/16KB data block as unit) address realm to the main frame that uses this memory device 400.Logical block can comprise multiple storage blocks, and each storage block can comprise multiple pages, and typically, one page is 4KB or 8KB or 16KB size.For clear, be indifferent to the Method of Data Organization of logical block inside here.In one embodiment, linear address is LBA(Logic Block Address, LBA (Logical Block Addressing))
Fig. 8 A shows memory device 400 and presents the 0 ~ linear address range (nm-1) having take data block as unit to main frame.Fig. 8 B shows corresponding with each linear address of Fig. 8 A, is presented as the address pattern of storage unit group address and storage unit group bias internal.In Fig. 8 B, lateral attitude is corresponding to each storage unit group, and lengthwise position is corresponding to each storage unit group bias internal in storage unit group.In the time that each storage unit group comprises n data block, the lengthwise position of Fig. 8 B comprises n different storage unit group bias internal.For example, for the linear address 0 in Fig. 8 A, be mapped as No. 0 storage unit group and No. 0 storage unit group bias internal in Fig. 8 B.And linear address 1 in Fig. 8 A is mapped as No. 1 storage unit group and No. 0 storage unit group bias internal in Fig. 8 B.Linear address m in Fig. 8 A, is mapped as No. 0 storage unit group and No. 1 storage unit group bias internal in Fig. 8 B.Linear address nm-1 in Fig. 8 A, is mapped as m-1 storage unit group and n-1 storage unit group bias internal in Fig. 8 B.The mapping relations of Fig. 8 A and Fig. 8 B can be expressed as, the number by linear address divided by storage unit group in memory device 400, and the remainder of gained is as storage unit group address, and the business of gained is as storage unit group bias internal.Storage unit group address is corresponding to specific multiple logical blocks (or tube core) of the specific flash memory chip of a storage unit group of formation of the circuit daughter board (410-440) of memory device 400.And storage unit group bias internal has been indicated the linear address space in storage unit group.
Can use divider that the linear address in Fig. 8 A is mapped as to storage unit group address and the storage unit group bias internal in Fig. 8 B.Also can use the mode of look-up table to realize mapping.And in the time using look-up table, can, at linear address, in the mapping of storage unit group address and storage unit group bias internal, adopt other mapping relations.Can start or find by enumerating of the configuration to circuit daughter board (410-440) when the configuration of memory device 400 changes at memory device 400 and determine the size of the logical address space that memory device 400 presents to main frame for storing the quantity of logical block of user data in the quantity of storage unit group and storage unit group, and set up the mapping relations of linear address to storage unit group address and storage unit group bias internal.(division obtains linear storage unit group)
It is pointed out that the storage unit group shown in Fig. 8 B, can be storage unit group (being hereinafter referred to as " logic storage unit group ") in logic, and it does not represent the physical location information relevant to flash chip.Thereby, also need logic storage unit group address to be mapped as physical memory cell group address.Fig. 8 C-8F shows and implement the look-up table shining upon of the present invention between logic storage unit group address and physical memory cell group address.
In an example, main frame is with LBA accessing storage device.LBA is first converted into logic storage unit group address and the form of organizing bias internal.In another example, main frame is the address pattern accessing storage device with group bias internal with logic storage unit group address directly.Referring to Fig. 8 C-Fig. 8 F, " logic storage unit group " row provide logic storage unit group address and have been placed on the group bias internal in bracket.For example, be listed as for " logic storage unit group " " 1[X] ", wherein " 1 " presentation logic storage unit group address, and " [X] " expression group bias internal." [X] " can storage block or memory page be unit, in the address mapping providing at Fig. 8 C-Fig. 8 F, can ignore group bias internal " [X] " part.And multiple logical blocks in memory device are organized as storage unit group.Each storage unit group comprises multiple storage blocks or memory page.
The look-up table providing by Fig. 8 C-Fig. 8 F is set up one-to-one relationship between logic storage unit group address and physical memory cell group address.Also will will be appreciated that, the look-up table of Fig. 8 C-8F can be two-way, both can pass through logic storage unit group address, obtains corresponding physical memory cell group address; Also can pass through physical memory cell group address, obtain corresponding logic storage unit group address.
Referring to Fig. 8 C, memory device comprises 10 passages, comprises two flash chips on each passage.Multiple logical blocks on each flash chip form a storage unit group.Thereby memory device provides 20 storage unit groups.When take storage unit group as least unit, main frame is 0-19 by the logic storage unit group address space of knowing memory device.It is pointed out that storage block, memory page or sector that main frame can inside, access logic storage unit group unit, but the content that its look-up table that to be not Fig. 8 C-8F provide is concerned about.Get back to Fig. 8 C, for example, the address that main frame provides is " 4[X] ", and wherein " 4 " represent the logic storage unit group address take storage unit group unit as least unit, and storage block, memory page or the sector of " [X] " representative memory cell group inside.By the look-up table of Fig. 8 C, address " 4[X] " is mapped to passage 2, chip 0.And, implied that address " 4[X] " is mapped to all logical blocks of passage 2, chip 0 here.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 8 C provide is concerned about.And physical memory cell group address has represented the information of passage, chip and/or the logical block at storage unit group place.
Referring to Fig. 8 D, memory device comprises 6 passages, comprises two flash chips on each passage.Each flash chip comprises 8 logical blocks, and a storage unit group of every 4 logical blocks composition.Thereby each flash chip comprises 2 storage unit groups.Thereby memory device provides 24 storage unit groups.When take storage unit group as least unit, main frame is 0-23 by the address space of the logic storage unit group of knowing memory device.By the look-up table of Fig. 8 D, address " 4[X] " is mapped to passage 1, chip 0, logical block 0-3.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 8 D provide is concerned about.
Referring to Fig. 8 E, memory device comprises 6 passages, comprises two flash chips on each passage.Each flash chip comprises 8 logical blocks, and a storage unit group of every 8 logical blocks composition.In the embodiment of Fig. 8 E, form 8 logical blocks of a storage unit group from two flash chips.And in the embodiment of Fig. 8 C and Fig. 8 D, form multiple logical blocks of a storage unit from identical flash chip.
Get back to Fig. 8 E, memory device provides 12 storage unit groups.When take storage unit group as least unit, main frame is 0-11 by the logic storage unit group address space of knowing memory device.By the look-up table of Fig. 8 E, address " 4[X] " is mapped to passage 2, chip 0, logical block 0-3, and passage 2, chip 1, logical block 0-3.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 8 E provide is concerned about.
Continue referring to Fig. 8 F, memory device comprises 4 passages, comprises two flash chips on each passage.Each flash chip comprises 2 logical blocks, and a storage unit group of every 4 logical blocks composition.In the embodiment of Fig. 8 F, form 4 logical blocks of a storage unit group from four flash chips.Thereby memory device provides 4 storage unit groups.When take storage unit group as least unit, main frame is 0-3 by the logic storage unit group address space of knowing memory device.By the look-up table of Fig. 8 F, address " 3[X] " is mapped to the logical block 1 on chip 1, the each chip on passage 0-3, each passage.And " [X] " remain unchanged, because the content that its look-up table that to be not Fig. 8 F provide is concerned about.
Although provide the mapping relations between specific logic storage unit group address and physical memory cell group address in Fig. 8 C-Fig. 8 F, but one of ordinary skill in the art will recognize, there is multiple other mapping mode between logic storage unit group address and physical memory cell group address.Because logic storage unit group address space and physical memory cell group address space are one to one, by being each address in logic storage unit group address space, distribute uniquely a physical address in physical memory cell group address space, one of ordinary skill in the art are by the various ways that obtains shining upon one by one between logic storage unit group address and physical memory cell group address.
The look-up table of Fig. 8 C-Fig. 8 F can be implemented as lut circuits.Circuit daughter board configuration on circuit motherboard 400 does not change, lut circuits is without change.
Then referring to Fig. 9, Fig. 9 is the process flow diagram of storage unit group address mapping method according to an embodiment of the invention.Before implementing address mapping, first obtain the configuration information of storage unit group, and set up address mapping table.In step 990, obtain the storage unit group quantity on the circuit daughter board of memory device.In an example, the quantity of the logical block on acquisition cuicuit daughter board 410, and by the quantity of logical block the number of logic cells N divided by each storage unit group, obtain the quantity of storage unit group.In an example, 3 lead-in wires that provide by the interface of circuit daughter board 410, the quantity of the logical block of acquisition circuit daughter board 410.In another example, circuit motherboard 400 comprises circuit daughter board 410 and 420, comprises 24 logical blocks, and on circuit daughter board 420, comprise 48 logical blocks on circuit daughter board 410, and each storage unit group comprises 8 logical blocks.And then the quantity that can obtain on circuit motherboard 400 the storage unit group of arranging is 9, and can obtain the distribution of these storage unit groups on circuit daughter board 410 and 420.
In step 992, computational logic storage unit group address scope.According to the quantity of the storage unit group having obtained, can determine the upper limit of the storage space take storage unit group as least unit of circuit motherboard 400, using this upper limit as circuit motherboard 400 or memory device offer the upper limit in the logic storage unit group address space of main frame.In the time that circuit motherboard 400 comprises 7 storage unit groups, the corresponding logic storage unit group address scope take storage unit group as least unit is 0-6.In the time that circuit motherboard 400 comprises 48 storage unit groups, the corresponding logic storage unit group address scope take storage unit group as least unit is 0-47.
In step 994, provide the logic storage unit group address calculating scope.In an example, logic storage unit group address scope is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.In an example, for example, by the specific memory location of logic storage unit group address scope range storage---the register calculating, main frame can obtain the address realm of logic storage unit group by accessing this register.
In step 996, set up the two-way mapping table between logic storage unit group address and physical memory cell group address.In an embodiment according to the present invention, logic storage unit group address space and physical memory cell group address space are shone upon one by one.In an example, when main frame is during take storage unit group as unit accessing storage device, the logic storage unit group address space that main frame provides with obviously there are mapping relations one by one with the physical memory cell group address space on memory device.In another example, when main frame is during using storage block, memory page or sector as least unit accessing storage device, continuous multiple storage blocks, memory page or sector is organized as and has the identical size of same storage unit group in logic, thereby form the logic storage unit group address using storage unit group as unit, thereby make logic storage unit group address space and there are mapping relations one by one with the physical memory cell group address space on memory device.
In step 980, receive order.In an example, order is the order for accessing storage device from main frame, carries or otherwise indicate for the logic storage unit group address of accessing storage device or can be exchanged into the LBA of logical block group address in order.And in another example, order comes from and the data of reading need to be offered to main frame from memory device, in order, carry or indicate the physical memory cell group address of institute's sense data.In another example still, there is mistake in the flash chip that order comes from memory device, carries or indicate the physical memory cell group address that occurs wrong position in order.The concrete meaning of these orders is not intended to limit protection scope of the present invention, but explanation exists the order of various ways and/or purposes, need to shine upon physical memory cell group address or logic storage unit group address wherein.
In step 982, the direction of the address mapping that judgement will be carried out, is the mapping from logic storage unit group address to physical memory cell group address, or the mapping from physical memory cell group address to logic storage unit group address.Can form and/or purposes based on order judge, also can ad hoc structure or coded portion based in order judge.
If physical memory cell group address is mapped to logic storage unit group address, for example, order comes from and the data of reading need to be offered to main frame from memory device, so, proceed to step 984, based on carrying in order or obtaining logic storage unit group address by the indicated physical memory cell group address of order.In an example, can physical memory cell group address be mapped as to logic storage unit group address by the look-up table being provided as Fig. 8 C-Fig. 8 F.In step 986, operate according to the logic storage unit group address obtaining.For example, come from and need to, by offering main frame from the data of reading memory device, logic storage unit group address or LBA be sent to main frame together with the data of reading in order.In another example, the flash chip that comes from memory device in order occur wrong, logic storage unit group address or LBA and/or error message are offered to main frame.
If logic storage unit group address is mapped to physical address, for example, order is the order for accessing storage device from main frame, so, proceed to step 988, based on carrying in order or obtaining physical memory cell group address by indicated logic storage unit group address or the LBA of order.Can logic storage unit group address be mapped as to physical memory cell group address by the look-up table being provided as Fig. 8 C-Fig. 8 F.In step 989, according to the physical memory cell group address access flash chip obtaining.For example, according to the order from main frame, data are write to flash chip by the physical memory cell group address that obtains, or by the physical memory cell group address sense data from flash chip obtaining.
In step 992, whether the logic storage unit group quantity on testing circuit motherboard 400 changes.The variation of logic storage unit group quantity, for example comes from and inserts circuit daughter board 410 to circuit motherboard 400, removes circuit daughter board 410 etc. from circuit motherboard 400.If the quantity of logic storage unit group changes, turn to step 990, again obtain logic storage unit group quantity, and set up the mapping table between logic storage unit group address and physical memory cell group address.If logic storage unit group quantity does not change, without the mapping table changing between logic storage unit group address and physical memory cell group address, and proceed to step 980, to wait for the reception to next order.
In superincumbent description, described the address mapping between LBA and PBA in conjunction with Fig. 4, Fig. 5 A-5D, Fig. 6, and the address of having described in conjunction with Fig. 8 A-8F, Fig. 9 between logic storage unit group and physical memory cell group is shone upon.In optional embodiment, can also between logical address and physical address, shine upon one by one take plane (Plane) as unit.
Figure 10 A-10D is the process flow diagram of setting up according to an embodiment of the invention the mapping of logical address and physical address.In the time that the circuit daughter board on circuit motherboard 400 changes, need to re-establish the mapping between logical address and physical address.
Referring to Figure 10 A, circuit motherboard comprises circuit daughter board 410 and circuit daughter board 420.In step 1000, the quantity of the logical block on acquisition cuicuit daughter board 410.In an example, in the interface of circuit daughter board 410, provide 3 lead-in wires, every lead-in wire is by the configuration on the electric signal indicating circuit daughter board 410 of its transmission.For example, on circuit daughter board 410, comprise first passage, second channel and third channel, wherein on each passage, be furnished with 1 flash chip or 2 flash chips.One of ordinary skill in the art also can recognize the mode of the configuration of other indicating circuit daughter boards 410.Or these 3 lead-in wires can be indicated the quantity of the logical block of arranging on each passage, for example on first passage, be furnished with 8 logical blocks, on second channel, be furnished with 8 logical blocks, and on third channel, be furnished with 16 logical blocks.In an example still, on the configuration information indicating circuit daughter board 410 of circuit daughter board 410, comprise 3 passages, 3 passages include in the situation of 16 logical blocks, and the quantity that can obtain the logical block of arranging on circuit motherboard 400 is 48.
In step 1002, the quantity of the logical block on acquisition cuicuit daughter board 420.In an example, circuit motherboard 400 comprises circuit daughter board 410 and 420, on circuit daughter board 410, comprise 24 logical blocks, and on circuit daughter board 420, comprise 48 logical blocks, thereby by the number of logic cells summation to each circuit daughter board, the quantity that can obtain the logical block of arranging on circuit motherboard 400 is 72, and can obtain the distribution of these logical blocks on circuit daughter board 410 and 420.
In step 1004, computational logic address realm.According to the quantity of the logical block having obtained, can determine the upper limit of the storage space take logical block as least unit of circuit motherboard 400, offer the upper limit of the logical address space of main frame using this upper limit as circuit motherboard 400 or memory device.In the time that circuit motherboard 400 comprises 72 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-71; In the time that circuit motherboard 400 comprises 48 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-47.
In step 1006, the ranges of logical addresses calculating is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.---for example register---makes main frame can pass through the access to this register in an example, the ranges of logical addresses calculating to be stored to specific memory location, and knows the memory capacity that memory device has.In the time that memory device comprises 72 logical blocks, inform that to main frame the ranges of logical addresses take logical block as least unit of memory device is 0-71.In an example, the ranges of logical addresses providing to main frame is using other unit as least unit, for example, and using storage block, memory page, sector or storage unit group as least unit.The quantity of storage block, memory page or sector can be the multiple of number of logic cells, and each storage unit group can comprise N logical block.
In step 1008, set up the two-way mapping table between logical address and physical address.In an embodiment according to the present invention, logical address space and physical address space shine upon one by one.In an example, when logical address space is during using logical block as least unit, logical address space and logical block take flash chip obviously have mapping relations one by one as the physical address space of least unit.In another example, when main frame is during using storage block, memory page or sector as least unit accessing storage device, continuous multiple storage blocks, memory page or sector is organized as and has the size that same logical block is identical in logic, thereby form logical address using logical block as least unit, thereby make logical address space and logical block take flash chip obviously there are mapping relations one by one as the physical address space of least unit.In another example still, when main frame is during take storage unit group as least unit accessing storage device, set up the mapping relations one by one between logic storage unit group and physical memory cell group.In another example, provide the ranges of logical addresses take storage block as least unit to main frame, and set up the mapping relations one by one between logic storage unit group and physical memory cell group, and the logical address take storage block as least unit from main frame is converted to logic storage unit group address by memory device.
Referring to Figure 10 B, for example, when adding after tertiary circuit daughter board (circuit daughter board 430), re-establish the mapping between logical address and physical address on circuit motherboard 400.In step 1010, insert circuit daughter board 430 to circuit motherboard 400.In step 1012, the quantity of the logical block on acquisition cuicuit daughter board 430.In an example, in the interface of circuit daughter board 430, provide 3 lead-in wires, every lead-in wire is by the configuration on the electric signal indicating circuit daughter board 410 of its transmission.
In step 1014, computational logic address realm.The quantity summation of the logical block to each circuit daughter board having obtained (circuit daughter board 410,420 and 430), can determine the upper limit of the storage space take logical block as least unit of circuit motherboard 400, offer the upper limit of the logical address space of main frame using this upper limit as circuit motherboard 400 or memory device.In the time that circuit motherboard 400 comprises 72 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-71; In the time that circuit motherboard 400 comprises 48 logical blocks, the corresponding ranges of logical addresses take logical block as least unit is 0-47.
In step 1016, the ranges of logical addresses calculating is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.
In step 1018, set up the two-way mapping table between logical address and physical address.In an embodiment according to the present invention, logical address space and physical address space shine upon one by one.In an example, when logical address space is during using logical block as least unit, logical address space and logical block take flash chip obviously have mapping relations one by one as the physical address space of least unit.In another example, when main frame is during using storage block, memory page or sector as least unit accessing storage device, continuous multiple storage blocks, memory page or sector is organized as and has the size that same logical block is identical in logic, thereby form logical address using logical block as least unit, thereby make logical address space and logical block take flash chip obviously there are mapping relations one by one as the physical address space of least unit.In another example still, when main frame is during take storage unit group as least unit accessing storage device, set up the mapping relations one by one between logic storage unit group and physical memory cell group.In another example, provide the ranges of logical addresses take storage block as least unit to main frame, and set up the mapping relations one by one between logic storage unit group and physical memory cell group, and the logical address take storage block as least unit from main frame is converted to logic storage unit group address by memory device.
Referring to Figure 10 C, for example, for example, when having replaced after the first circuit daughter board (circuit daughter board 410) and/or second circuit daughter board (circuit daughter board 420) of circuit motherboard 400, re-establish the mapping between logical address and physical address.In step 1020, change the circuit daughter board 410 on circuit motherboard 400.In step 1022, the quantity of the logical block on acquisition cuicuit daughter board 410.In step 1024, the quantity of the logical block on acquisition cuicuit daughter board 420.
In step 1026, computational logic address realm.The quantity summation of the logical block to each circuit daughter board having obtained (circuit daughter board 410 and 420), can determine the upper limit of the storage space take logical block as least unit of circuit motherboard 400, offer the upper limit of the logical address space of main frame using this upper limit as circuit motherboard 400 or memory device.
In step 1028, the ranges of logical addresses calculating is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.
In step 1029, set up the two-way mapping table between logical address and physical address.In an embodiment according to the present invention, logical address space and physical address space shine upon one by one.
Referring to Figure 10 D, for example, when removing from circuit motherboard 400 the first circuit daughter board (circuit daughter board 410), re-establish the mapping between logical address and physical address.In step 1030, remove the circuit daughter board 410 on circuit motherboard 400.In step 1032, the quantity of the logical block on acquisition cuicuit daughter board 420.In step 1034, computational logic address realm.The quantity summation of the logical block to the circuit daughter board on circuit motherboard 400 (circuit daughter board 410), can determine the upper limit of the storage space take logical block as least unit of circuit motherboard 400, offer the upper limit of the logical address space of main frame using this upper limit as circuit motherboard 400 or memory device.In step 1036, the ranges of logical addresses calculating is offered to main frame, make main frame know the memory capacity that circuit motherboard 400 or memory device have.In step 1038, set up the two-way mapping table between logical address and physical address.In an embodiment according to the present invention, logical address space and physical address space shine upon one by one.
Figure 11 is according to the theory diagram of the memory device of the embodiment of the present invention.The control circuit 660 of memory device is coupled to circuit daughter board 410,420.Circuit daughter board 410,420 is coupled to control circuit 660 by private bus separately.In memory device, can also comprise more circuit daughter board.Control circuit 660 is also coupled to main frame 710 by host interface.Control circuit 660 also comprises that processor 728, logical address are to physical address mapping table circuit 732, physical address to logical address mapping table circuit 734 and flash interface circuit 730.
The configuration of processor 728 acquisition cuicuit daughter boards 410,420.Particularly, processor 728 obtains the quantity of each logical block of circuit daughter board 410,420, and calculates the total amount of the logical block that all circuit daughter boards 410,420 on memory device have.And then processor 728 calculates the scope of the logical address take logical block as least unit that memory device presents to main frame 710.Processor 728 is also set up the two-way mapping table between logical address and physical address, and logic-based address to the mapping table of physical address and initialization logic address to physical address mapping table circuit 732, and based on physical address to the mapping table of logical address and initialization physical address to logical address mapping table circuit 734.Logical address can be realized by lut circuits to logical address mapping table circuit 734 to physical address mapping table circuit 732 and physical address, also can be by FPGA inner or outside RAM(Random Access Memory, random access storage device) realize.Flash interface circuit 730 is for the multiple flash chips on access circuit daughter board 410 and 420.Although figure 11 illustrates single flash interface circuit 730, be understandable that, multiple flash interface circuit 730 can be provided, with to multiple circuit daughter boards 410,420 and on multiple flash chips carry out concurrent access.
In control circuit 660, also comprise testing circuit (not shown), for detection of the configuration of circuit daughter board 410,420, with the quantity of each logical block being provided of acquisition cuicuit daughter board 410,420.And make the quantity of each logical block of the circuit daughter board 410,420 that the addressable testing circuit of processor 728 obtains.Testing circuit also detects the variation (insert, remove etc.) to circuit daughter board 410,420, and in the time detecting that circuit daughter board 410,420 changes, the quantity of each the provided logical block of acquisition cuicuit daughter board 410,420 again.And, detecting that in response to testing circuit circuit daughter board 410,420 changes, processor 728 re-establishes logical address and arrives logical address mapping table 734 to physical address mapping table 732 and physical address.
Referring to the process flow diagram providing in Fig. 6 or Fig. 9, in the time that logical address is converted to physical address by needs, processor 728 sends to logical address to physical address mapping table circuit 732 logical address that extract or that otherwise obtain from order.Logical address as input, and produces the physical address corresponding with it as output to physical address mapping table circuit 732 receive logic addresses, and the physical address of output is sent to flash interface circuit 730.Flash interface circuit 730 is based on this physical address, the flash chip on access circuit daughter board 410 and/or 420.In the time the physical address translations from flash interface circuit 730 need to being logical address, flash interface circuit 730 sends to physical address to arrive logical address mapping table circuit 734 logical address.Physical address receives physical address as input to logical address mapping table circuit 734, and produces corresponding with it logical address as output, and this logical address is sent to processor 728.Then, for example, in the case of need to, by offering main frame from the data of reading memory device, logical address being sent to main frame together with the data of reading.In another example, in the case of the flash chip of memory device occur wrong, logical address and/or error message are offered to main frame.
The quantity of the storage unit group that in another embodiment, testing circuit testing circuit daughter board 410 and 420 provides.Processor 728 use logic storage unit group addresss arrive physical address mapping table circuit 732 and physical address to logical address mapping table circuit 734 to the mapping relations initialization logic address between physical memory cell group address.Processor 732 sends to logical address to physical address mapping table circuit 732 logic storage unit group address, logical address generates corresponding physical memory cell group address to physical address mapping table circuit 732, and send to flash interface circuit 730, make the flash chip on flash interface circuit 730 access circuit daughter boards 410 and 420.And flash interface circuit 730 sends to physical address to arrive logical address mapping table circuit 734 physical memory cell group address, the logic storage unit group address that physical address obtains mapping to logical address mapping table circuit 734 sends to processor 728.
Storage system is also provided.Comprise main frame 710 and memory device 400 according to the storage system of the embodiment of the present invention.One or more memory devices 400 can be connected to main frame 710.In an example, memory device 400 is connected to main frame 710 by PCIE interface.Can also memory device 400 be coupled to main frame 710 with multiple other interface, multiple interfaces includes but not limited to SATA, USB, PCIE, SCSI, IDE, FC etc.
Represent the description of this invention for the object illustrating and describe, and be not intended to disclosed form limit or restriction the present invention.To one of ordinary skill in the art, many adjustment and variation are apparent.

Claims (10)

1. for an address mapping method for memory device, comprising:
Receive the physical address for the storage unit of described memory device;
Be logical address by described physical address map;
Described logical address is sent to the main frame of the described memory device of access.
2. method according to claim 1, wherein using look-up table is logical address by described physical address map.
3. method according to claim 1 and 2, comprising:
Obtain the first quantity of the storage element on first circuit board, obtain the second quantity of the storage unit on second circuit board;
Obtain ranges of logical addresses based on described the first quantity and described the second quantity, the value of described logical address is within described ranges of logical addresses;
Provide described ranges of logical addresses to main frame.
4. method according to claim 3, comprising:
Based on described the first quantity and described the second quantity, set up look-up table, for each physical address map of the storage unit on first circuit board or second circuit board is arrived to the logical address in described ranges of logical addresses.
5. according to the method one of claim 1-4 Suo Shu, described storage unit is logical block, tube core or the plane in memory chip.
6. according to the method one of claim 1-5 Suo Shu, wherein, described storage unit comprises multiple storage blocks, and in the time that the storage block in described storage unit is damaged, the mapping relations that are logical address by described physical address map remain unchanged.
7. method according to claim 3, comprising:
Again obtain the 3rd quantity of the storage unit on described first circuit board, again obtain the 4th quantity of the storage unit on second circuit board;
Obtain the second ranges of logical addresses based on described the 3rd quantity and described the 4th quantity, the value of described logical address is within ranges of logical addresses described in second;
Provide described the second ranges of logical addresses to main frame;
Based on described the 3rd quantity and described the 4th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board or second circuit board is arrived to the logical address in described the second ranges of logical addresses.
8. method according to claim 3, comprising:
Obtain the 5th quantity of the storage unit on tertiary circuit plate;
Obtain the 3rd ranges of logical addresses based on described the first quantity, described the second quantity and described the 5th quantity, the value of described logical address is within ranges of logical addresses described in the 3rd;
Provide described the 3rd ranges of logical addresses to main frame;
Based on described the first quantity, described the second quantity and described the 5th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board, second circuit board or tertiary circuit plate is arrived to the logical address in described the 3rd ranges of logical addresses.
9. method according to claim 3, comprising:
Again obtain the 6th quantity of the storage unit on described first circuit board;
Obtain the 4th ranges of logical addresses based on described the 6th quantity, the value of described logical address is within ranges of logical addresses described in the 4th;
Provide described the 4th ranges of logical addresses to main frame;
Based on described the 6th quantity, set up look-up table, for each physical address map of the storage unit on first circuit board is arrived to the logical address in described the 4th ranges of logical addresses.
10. method according to claim 1, wherein said the first quantity is different from described the second quantity.
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