CN103913241B - Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light - Google Patents
Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light Download PDFInfo
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- CN103913241B CN103913241B CN201410178470.7A CN201410178470A CN103913241B CN 103913241 B CN103913241 B CN 103913241B CN 201410178470 A CN201410178470 A CN 201410178470A CN 103913241 B CN103913241 B CN 103913241B
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Abstract
The invention discloses a kind of non-brake method and read structure of controlling temperature and the method for Infrared FPA detector without substrate light, including infrared focal plane array, for supporting the array support frame of this infrared focal plane array and being positioned at this array support frame periphery and for supporting the peripheral support frame of this array support frame, infrared focal plane array is provided with several chip pixel structure, array support frame is formed framework resistance, peripheral support frame is formed thermo-sensitive resistor, it is additionally provided with temperature-control circuit module and constant pressure source, thermo-sensitive resistor two ends are electrically connected in temperature-control circuit module, framework resistance and temperature-control circuit module are serially connected with on constant pressure source.This non-brake method ensure that the constant of temperature without structure of controlling temperature and the method for substrate light reading Infrared FPA detector, and avoid the hot crosstalk between each pixel structure, improve the image resolution ratio of detector, utilize simple process structure to achieve accurate thermostatic control, there is good using value.
Description
Technical field
The invention belongs to micro processing field, particularly relate to a kind of non-brake method without
Substrate light reads structure of controlling temperature and the method for Infrared FPA detector.
Background technology
Non-brake method reads infrared focal plane array (FPA) detector because of tool without substrate light
There are the advantages such as INFRARED ABSORPTION efficiency high, thermal conductance is low, processing technology is simple, low cost,
Wide application prospect is suffered from civilian every field.And the light without substrate reads red
The thermal capacitance of the support frame of outer focal plane arrays (FPA) is less, and at the beginning of the pixel of detector
Beginning state and its local environment temperature have direct relation, therefore, how to realize picture
The state of unit is not affected by extraneous ambient temperature, is to determine that can this device normal
The important references of work.The mode generally taked at present is to utilize TEC refrigerating ring structure
Ensureing that detector is operated under a constant ambient temperature, the method is to utilize limit
The heat exchange pattern of edge temperature control realizes, and its temperature control effect is undesirable, thus causes
The inside and outside of this array structure still has certain temperature gradient to be distributed, and high with ambient temperature
Low and radiation power and change.
Summary of the invention
In order to overcome drawbacks described above, the invention provides a kind of non-brake method and read without substrate light
Go out structure of controlling temperature and the method for Infrared FPA detector, it is possible to utilize simple technique to tie
Structure realizes accurate thermostatic control, has good using value.
The present invention is to solve that its technical problem be the technical scheme is that a kind of non-
Freeze and read the structure of controlling temperature of Infrared FPA detector without substrate light, put down including infrared Jiao
Face array, for supporting the array support frame of this infrared focal plane array and be positioned at
This array support frame is peripheral and is used for supporting the peripheral support of this array support frame
Framework, described infrared focal plane array is provided with several chip pixel structure, in institute
State and in array support frame, be formed with framework resistance, shape on described peripheral support frame
Become to have thermo-sensitive resistor, be additionally provided with temperature-control circuit module and constant pressure source, described temperature sensitive
Resistance two ends are electrically connected in described temperature-control circuit module, described framework resistance and
Temperature-control circuit module is serially connected with on described constant pressure source.
As a further improvement on the present invention, described framework resistance is by described array
In support frame, deposited metal is formed.
As a further improvement on the present invention, described thermo-sensitive resistor is by described periphery
Deposit temperature sensing material in support frame and etch formation.
The present invention also provides for a kind of non-brake method and reads Infrared FPA detector without substrate light
Temp. control method, including infrared focal plane array, for supporting this infrared focus plane battle array
The array support frame of row and to be positioned at this array support frame peripheral and for supporting
The peripheral support frame of this array support frame, described infrared focal plane array is provided with
Several chip pixel structure, form framework resistance in described array support frame,
Described peripheral support frame is formed thermo-sensitive resistor, separately sets temperature-control circuit module
And constant pressure source, thermo-sensitive resistor two ends are electrically connected to described temperature-control circuit module
On, and described framework resistance and temperature-control circuit module are serially connected with described constant pressure source
On.
As a further improvement on the present invention, described framework resistance is by described array
In support frame, deposited metal is formed.
As a further improvement on the present invention, described thermo-sensitive resistor is by described periphery
Deposit temperature sensing material in support frame and etch formation.
The invention has the beneficial effects as follows: this non-brake method reads Infrared FPA without substrate light
The structure of controlling temperature of detector and method, supported by the array at detector array architecture
Deposit metal on framework to realize resistance and make, the i.e. peripheral support frame in chip edge region
Deposit temperature sensing material on frame and realize the making of thermo-sensitive resistor, then utilizing circuit module
Realize the constant temperature of the framework of device, thus ensure that it is not with ambient temperature and radiation power
Change and change, and avoid the hot crosstalk between each pixel structure, improve
The image resolution ratio of detector, in a word, utilizes simple process structure to achieve accurately
Thermostatic control, there is good using value.
Accompanying drawing explanation
Fig. 1 is present configuration schematic diagram；
Fig. 2 present invention cuts open cross-sectional view；
Fig. 3 is infrared focal plane array of the present invention and the single dot structure of chip
Schematic diagram；
Fig. 4 is a kind of knot that constant pressure source described in the embodiment of the present invention connects framework resistance
Structure schematic diagram；
Fig. 5 is the another kind that constant pressure source described in the embodiment of the present invention connects framework resistance
Structural representation.
In conjunction with accompanying drawing, make the following instructions:
1 array support frame 2 peripheral support frame
3 chip pixel structure 4 temperature-control circuit modules
5 constant pressure source 11 framework resistance
12 thermo-sensitive resistors
Detailed description of the invention
In conjunction with accompanying drawing, the present invention is elaborated, but protection scope of the present invention is not
It is limited to following embodiment, i.e. in every case with scope of the present invention patent and description
The simple equivalence change made with modify, the most still belong to patent covering scope of the present invention it
In.
As shown in Figure 1, 2, a kind of non-brake method reads Infrared FPA detection without substrate light
The structure of controlling temperature of device, including infrared focal plane array, for supporting this infrared focus plane
The array support frame 1 of array and be positioned at this array support frame peripheral and for
Support the peripheral support frame 2 of this array support frame, infrared focal plane array sets
There are several chip pixel structure 3, for clarity sake, herein only at center position
Give the structural representation of one single chip pixel structure 3, see Fig. 3.
Array support frame 1 is by the medium of the infrared absorption layer of infrared focal plane array
Film and Metal deposition layer are constituted, and wherein, Metal deposition layer constitutes conductive resistance, i.e. frame
Frame resistance 11.It addition, the limit of the array support frame 2 at infrared focal plane array
Edge one layer of temperature sensing material of deposit also forms thermo-sensitive resistor 21 by etching, separately set temperature
Thermo-sensitive resistor two ends are electrically connected to temperature control by control circuit module 4 and constant pressure source 5
On circuit module processed, and framework resistance and temperature-control circuit module are serially connected with constant voltage
On source.Determine that power supply is applied to framework resistance 21 according to thermo-sensitive resistor 21 feedback signal
Upper state, thus realize the temperature of frame structure, device is not by external environment or radiation
Change and change its original state, to ensure that it normally uses.
For ensureing the temperature homogeneity of infrared focal plane array chip, first have to ensure electricity
The uniformity of stream, is given below two kinds of attachment structures and executes to the voltage realizing high uniformity
Add mode.
As shown in Figure 4, use diagonal output electrode, will two couple of framework resistance
Linea angulata applies voltage respectively as power connection points, to ensure the resistance of current circuit
It is identical, thus ensure that the uniformity of electric current.
As it is shown in figure 5, use single direction to apply voltage, i.e. at the horizontal stroke of framework resistance
To or longitudinal two ends apply voltage respectively, thus ensure that the resistance of current circuit is identical
, to realize the uniformity of electric current, the temperature of other direction is to rely on X-direction heating
Between resistance, conduction of heat realizes.
Claims (6)
1. non-brake method reads a structure of controlling temperature for Infrared FPA detector without substrate light,
Including infrared focal plane array, for supporting the array support of this infrared focal plane array
Framework (1) and to be positioned at this array support frame peripheral and prop up for supporting this array
The peripheral support frame (2) of support frame frame, described infrared focal plane array is provided with some
Individual chip pixel structure (3), it is characterised in that: shape in described array support frame
Become to have framework resistance (11), described peripheral support frame is formed with thermo-sensitive resistor
(21) temperature-control circuit module (4) and constant pressure source (5), described temperature, it are additionally provided with
Quick resistance two ends are electrically connected in described temperature-control circuit module, described framework resistance
It is serially connected with on described constant pressure source with temperature-control circuit module.
Non-brake method the most according to claim 1 reads Infrared FPA without substrate light
The structure of controlling temperature of detector, it is characterised in that: described framework resistance is by described battle array
In row support frame, deposited metal is formed.
Non-brake method the most according to claim 1 reads Infrared FPA without substrate light
The structure of controlling temperature of detector, it is characterised in that: described thermo-sensitive resistor is by outside described
Enclose and deposit temperature sensing material in support frame and etch formation.
4. a non-brake method reads the temperature control side of Infrared FPA detector without substrate light
Method, including infrared focal plane array, for supporting the array of this infrared focal plane array
Support frame (1) and to be positioned at this array support frame peripheral and for supporting this battle array
The peripheral support frame (2) of row support frame, described infrared focal plane array is provided with
Several chip pixel structure (3), it is characterised in that: in described array support frame
Upper formation framework resistance (11), forms thermo-sensitive resistor on described peripheral support frame
(21), temperature-control circuit module (4) and constant pressure source (5) are separately set, by temperature sensitive electricity
Resistance two ends are electrically connected in described temperature-control circuit module, and by described framework resistance
It is serially connected with on described constant pressure source with temperature-control circuit module.
Non-brake method the most according to claim 4 reads Infrared FPA without substrate light
The temp. control method of detector, it is characterised in that: described framework resistance is by described battle array
In row support frame, deposited metal is formed.
Non-brake method the most according to claim 4 reads Infrared FPA without substrate light
The temp. control method of detector, it is characterised in that: described thermo-sensitive resistor is by outside described
Enclose and deposit temperature sensing material in support frame and etch formation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410178470.7A CN103913241B (en) | 2014-04-29 | 2014-04-29 | Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light |
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|---|---|---|---|
| CN201410178470.7A CN103913241B (en) | 2014-04-29 | 2014-04-29 | Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light |
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| CN103913241B true CN103913241B (en) | 2016-08-31 |
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| CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630246A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
| CN203811280U (en) * | 2014-04-29 | 2014-09-03 | 昆山光微电子有限公司 | Temperature control structure of uncooled substrate-free optical readout infrared FPA detector |
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| JP3944465B2 (en) * | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | Thermal infrared detector and infrared focal plane array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630246A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
| CN203811280U (en) * | 2014-04-29 | 2014-09-03 | 昆山光微电子有限公司 | Temperature control structure of uncooled substrate-free optical readout infrared FPA detector |
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Effective date of registration: 20220801 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 215300 No. 145, Daqiao Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: KUNSHAN MICROOPTIC ELECTRONIC CO.,LTD. |
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