CN103907196A - 充当有机光电装置中的空穴传输层的p型过渡金属氧化物类膜 - Google Patents

充当有机光电装置中的空穴传输层的p型过渡金属氧化物类膜 Download PDF

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Publication number
CN103907196A
CN103907196A CN201280052723.5A CN201280052723A CN103907196A CN 103907196 A CN103907196 A CN 103907196A CN 201280052723 A CN201280052723 A CN 201280052723A CN 103907196 A CN103907196 A CN 103907196A
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Prior art keywords
metal oxide
moo3
transition metal
hole
collecting electrode
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CN201280052723.5A
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English (en)
Chinese (zh)
Inventor
巩雄
杨庭斌
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University of Akron
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University of Akron
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Silicon Compounds (AREA)
CN201280052723.5A 2011-10-27 2012-10-29 充当有机光电装置中的空穴传输层的p型过渡金属氧化物类膜 Pending CN103907196A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161551958P 2011-10-27 2011-10-27
US61/551,958 2011-10-27
PCT/US2012/062394 WO2013063562A1 (en) 2011-10-27 2012-10-29 P-type transition metal oxide-based films serving as hole transport

Publications (1)

Publication Number Publication Date
CN103907196A true CN103907196A (zh) 2014-07-02

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CN201280052723.5A Pending CN103907196A (zh) 2011-10-27 2012-10-29 充当有机光电装置中的空穴传输层的p型过渡金属氧化物类膜

Country Status (4)

Country Link
US (1) US9252365B2 (enExample)
CN (1) CN103907196A (enExample)
IN (1) IN2014DN03360A (enExample)
WO (1) WO2013063562A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106796995A (zh) * 2014-09-11 2017-05-31 庆熙大学校产学协力团 利用含镓的p型氧化物半导体的有机发光二极管及其制造方法
CN111634949A (zh) * 2020-05-15 2020-09-08 桂林电子科技大学 一种WOx的溶液制备方法及其应用的紫外器件与制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101646727B1 (ko) * 2013-10-10 2016-08-08 한양대학교 산학협력단 태양 전지 및 그 제조 방법
JP2016171317A (ja) * 2015-03-12 2016-09-23 キヤノン電子株式会社 有機光電変換デバイス及び太陽電池
EP3770976A4 (en) * 2018-03-23 2021-12-22 Sumitomo Chemical Company, Limited ELEMENT FOR PHOTOELECTRIC CONVERSION

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072714A1 (en) * 2005-03-23 2009-03-19 Semiconductor Energy Laboratory Co., Ltd. Composite Material, Material for Light-Emitting Element, Light-Emitting Element, Light-Emitting Device and Electronic Device
US20090188558A1 (en) * 2008-01-25 2009-07-30 University Of Washington Photovoltaic devices having metal oxide electron-transport layers
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1507298A1 (en) * 2003-08-14 2005-02-16 Sony International (Europe) GmbH Carbon nanotubes based solar cells
WO2012106002A1 (en) * 2010-06-07 2012-08-09 The Board Of Regents Of The University Of Taxas System Multijunction hybrid solar cell with parallel connection and nanomaterial charge collecting interlayers
JP5924783B2 (ja) * 2011-07-25 2016-05-25 国立大学法人広島大学 ウエットプロセス用有機半導体材料

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090072714A1 (en) * 2005-03-23 2009-03-19 Semiconductor Energy Laboratory Co., Ltd. Composite Material, Material for Light-Emitting Element, Light-Emitting Element, Light-Emitting Device and Electronic Device
US20090188558A1 (en) * 2008-01-25 2009-07-30 University Of Washington Photovoltaic devices having metal oxide electron-transport layers
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG ET AL: "Donor-Acceptor Conjugated Polymer Based on Naphtho[1,2-c:5,6-c]bis[1,2,5]thiadiazole for High-Performance Polymer Solar Cells", 《J.AM.CHEM.SOC》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106796995A (zh) * 2014-09-11 2017-05-31 庆熙大学校产学协力团 利用含镓的p型氧化物半导体的有机发光二极管及其制造方法
CN106796995B (zh) * 2014-09-11 2019-07-16 庆熙大学校产学协力团 利用含镓的p型氧化物半导体的有机发光二极管及其制造方法
CN111634949A (zh) * 2020-05-15 2020-09-08 桂林电子科技大学 一种WOx的溶液制备方法及其应用的紫外器件与制备方法

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WO2013063562A1 (en) 2013-05-02
IN2014DN03360A (enExample) 2015-06-05
US20140295604A1 (en) 2014-10-02

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Application publication date: 20140702