CN103906346B - High heat radiation and the semiconductor device circuit substrate of high thermal conduction characteristic - Google Patents
High heat radiation and the semiconductor device circuit substrate of high thermal conduction characteristic Download PDFInfo
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Abstract
The present invention relates to the semiconductor device circuit substrate of a kind of high heat radiation and high thermal conduction characteristic, belong to the technical field of semiconductor device circuit substrate, resin insulating barrier and high heat conductive insulating layer it is formed with on described metal basal board, and described high heat conductive insulating layer is used as the pedestal of semiconductor components and devices, described resin insulating barrier is used as the pedestal of other electronic devices and components, and described semiconductor components and devices is electrically connected with by metal connector with other electronic devices and components described；And described metal connector is to use silver, gold or the lead-in wire of copper, bulge and/or bridge material.The circuit substrate of the present invention can provide thermal diffusivity to significantly improve and high reliability, can apply to the various matrix containing semiconductor chip, such as can improve the heat radiation of CPU etc. in computer circuits, improve the heat radiation of the semiconductor chips such as IGBT bipolar in inverter circuit, in raising wireless communication line, the heat radiation of wireless module etc., improves the heat radiation of managing chip in electric power management circuit.
Description
Technical field
The invention belongs to the technical field of electronic component circuit substrate, more particularly, it relates to one has excellent heat radiation
The high heat radiation of performance and the semiconductor device circuit substrate of high thermal conduction characteristic.
Background technology
Along with the development of integrated circuit, Electronic Packaging becomes gentlier, thinner, less, with better function, progressively meets the mankind to just
Prompt, comfortable, the pursuit of power, also has higher requirement to Electronic Packaging simultaneously.The increase of electronic component power consumption must
So can cause the raising of circuit caloric value, so that operating temperature constantly rises.In general, in the semiconductor device, temperature
Often raising 18 DEG C, the probability of inefficacy is increased by 2～3 times.Therefore heat radiation becomes the bottle that restriction electronic component develops to high powerization
Neck problem.
Currently, heat dissipation problem has become one of pendulum ultimate challenge in face of designers the most.On the one hand along with track
Road plate towards high density, in high precision, the development in small-sized multilamellar SMT direction, the installing space of components and parts is greatly decreased；And it is another
But it is more and more higher to the power requirement of power component.Little space is high-power to be inevitably generated more heat and gathers
Collection, causes components and parts electric property to decline and even damages.Previous solution is to use cooled hardware or pottery functional device heat radiation,
The former itself needs big quantity space, and the latter is more relatively big due to the thermal coefficient of expansion of pottery, and can not form big ceramic insulating layer,
And if ceramic insulating layer due to stress is easily formed crackle or de-at solder joint more than during certain size in repeated multiple times cold cycling
Fall and cause Joint failure the most easily to cause short circuit to lose efficacy.It addition, along with the pin of electronic devices and components more and more participates in
Heat radiation, it is desirable to conductive layer also to have good heat-sinking capability.Therefore, along with packaging density and the raising to reliability requirement,
It is considered as selecting the more preferable base material of heat conductivility and heat-conducting layer.
Current electronic device commonly uses FR4 printed substrate, for electronic device, affects of its reliability index
Key factor is exactly the operating temperature of components and parts.Recording according to pertinent literature, the crash rate of electronic equipment has 55% to be to be surpassed by temperature
Cross what the setting of electronic component caused.Temperature is different to the performance impact of all kinds components and parts, at common components and parts
In, temperature is maximum for the impact of semiconductor device.The semiconductor device such as integrated transporting discharging, TTL widely applied in electronic equipment
Logic chip, various power supply voltage stabilizing chips etc., its basic component units is all P-N junction, very sensitive to variations in temperature, typically temperature
Degree often raises 10 DEG C, and reverse leakage current will double.This variation with temperature, will result directly in product normal working point and sends out
Raw drift, maximum power dissipation declines.The performance parameter of Resistor-Capacitor Unit is also had a certain impact by temperature.When temperature raises, meeting
Cause thermal noise aggravation in resistance, resistance deviation nominal value, it is allowed to degradation under dissipated power.Impact on capacitor is to make electric capacity
The parameters such as amount and dielectric loss angle change, thus cause the parameter changes such as the capacity-resistance time constant in circuit, affect whole electricity
The reliability of subset.In order to reduce the temperature performance impact to components and parts, it is necessary to well and reliability is high to use heat radiation
Wiring board.
Summary of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide the semiconductor device of a kind of high heat radiation and high thermal conduction characteristic
Circuit substrate.Use the semiconductor device circuit substrate not only advantage of lower cost of high heat radiation of the present invention and high thermal conduction characteristic
And also there is high thermal conductivity, resist and wear and the feature of dependable performance.
High heat radiation of the present invention and the semiconductor device circuit substrate of high thermal conduction characteristic, including metal basal board or aluminium alloy, its
It is characterised by: on described metal basal board, be formed with resin insulating barrier and high heat conductive insulating layer, and described high heat conductive insulating layer is used as
The pedestal of semiconductor components and devices, described resin insulating barrier is used as the pedestal of other electronic devices and components, and described semiconductor components and devices
It is electrically connected with by metal connector with other electronic devices and components described；And the scope of the heat conductivity of described high heat conductive insulating layer
Being 50～500W/mK, thickness is 20～500 μm；The thermal conductivity of described resin insulating barrier is 0.5W/mK～30W/mK, thickness
It is 20～500 μm.
Wherein, described metal basal board have multiple resin insulating barrier and multiple high heat conductive insulating layer；And described resin insulating barrier
Between be disposed adjacent or be spaced setting；Adjacent or interval setting between described high heat conductive insulating layer；Described resin insulating barrier with
It is disposed adjacent between described high heat conductive insulating layer or is spaced setting.
Wherein, described metal basal board comprises roughening treatment, pickling, alkali through surface treatment procedure, described surface treatment procedure
Wash, any one or a few in acid etching or alkaline etching operation.
Wherein, described metallic substrate surfaces processes through surface and is formed with anode oxide film in its surface.
Wherein, described semiconductor components and devices or other electronic devices and components are welded by wave soldering, reflow soldering, eutectic or are used
Electroconductive binder is connected post and connects with plain conductor or metal.
Wherein, the power of described semiconductor components and devices is more than 0.5W, preferably more than 3W, more preferably more than 5W.
Wherein, described resin insulating barrier is the resin cured matter containing thermosetting resin, firming agent and inorganic filler.
Compared with prior art, technical scheme has the advantages that
The present invention is by arranging different heat conductivity and the Ceramic insulator of unlike material and insulation resin sheet, it is possible to provide heat radiation
Property significantly improves and the electronic devices and components encapsulation insulating metal substrate of high reliability, due to the performance pair of semiconductor device
Temperature is sensitive, therefore uses heat conduction and the base of ceramic of heat dispersion excellence for semiconductor device, and for other electronics unit device
Part uses common resin-insulated material, this avoid the brittle failure that the maximization of ceramic wafer may cause, improves circuit
The reliability of substrate；In addition the present invention is also by the process to metal basal board, it is possible to form high pressure resistant hitting on the surface of metal basal board
The anodic oxide coating of the insulating barrier worn, such as special handling, it is possible to improve packaging density and the reliability of encapsulation further.This
Circuit substrate described in invention may be used for the various matrix containing semiconductor chip, such as, can improve CPU etc. in computer circuits
Heat radiation, improve the heat radiation of the semiconductor chips such as IGBT bipolar in inverter circuit, improve wireless module in wireless communication line
Deng heat radiation, improve the heat radiation of managing chip in electric power management circuit.
Accompanying drawing explanation
Fig. 1 is the high heat radiation with semiconductor components and devices and other electronic devices and components of the present invention and the half of high thermal conduction characteristic
The structural representation of conductor device circuit substrate.
Detailed description of the invention
As shown in Figure 1, for a typical example (but the protection model of the present invention of great power LED photo engine of the present invention
Enclose the claim to check and approve to limit in the range of standard), described high heat radiation and the semiconductor device circuit substrate of high thermal conduction characteristic
On be provided with semiconductor components and devices and other electronic devices and components, it includes metal basal board 10, described metal basal board 10 is formed with tree
It is provided with metal pattern circuit 30 and quasiconductor on fat insulating barrier 20 and high heat conductive insulating layer 25, and described high heat conductive insulating layer 25
Components and parts 40, described resin insulating barrier 20 is provided with metal pattern circuit 30 and other electronic devices and components 50, and described partly leads
Volume elements device 40 can be electrically connected with by metal connector 60 with other electronic devices and components 50 described；And described high heat conductive insulating
The heat conductivity of layer is in the range of 50～500W/mK, and thickness is 20～500 μm；The thermal conductivity of described resin insulating barrier is 0.5
W/mK～30W/mK, thickness is 20～500 μm.Described metal connector be use silver, gold or the lead-in wire of copper, bulge and/
Or bridge material.Specifically, such as, solder, solder brazing, high-termal conductivity binding agent etc. can be used to be electrically connected, excellent
Elect solder as.The most described semiconductor chip can be such as IGBT bipolar chip, CPU core in inverter circuit
Sheet, wireless communications chips, managing chip or other semiconductor chip.
Wherein, described metal basal board have multiple resin insulating barrier and multiple high heat conductive insulating layer；And described resin insulating barrier
Between be disposed adjacent or be spaced setting；Adjacent or interval setting between described high heat conductive insulating layer；Described resin insulating barrier with
It is disposed adjacent between described high heat conductive insulating layer or is spaced setting.
As preferably, described metallic matrix through surface treatment procedure, described surface treatment procedure can comprise roughening treatment,
The various operations such as pickling, alkali cleaning, acid etching or alkaline etching.As the exemplary process for forming coarse surface, Ke Yiju
Go out metal basal board is implemented successively the roughened process of mechanicalness, alkaline etching process, use the cleaning treatment of acid and employ electrolyte
The method such as the roughened process of electrochemistry；Metal basal board is implemented repeatedly the roughened process of mechanicalness, alkaline etching processes, use acid
Dirty removing processing and employ the method for the roughened process of electrochemistry of different electrolyte；But the present invention is not limited to these.Make
Can be mineral acid and/or organic acid for acid.Can be such as alkali-metal hydroxide, such as sodium hydroxide as conventional alkali
Or potassium hydroxide, additionally can also use the organic base such as Tetramethylammonium hydroxide, trimethyl (ethoxy) ammonium hydroxide.In order to
Reduce the etch quantity of metal matrix material in pickling or alkaline etching processing procedure, can contain in described aqueous slkali or acid solution
Anticorrodent, additionally can contain other component such as surfactant and chelating agen.
In the present invention, described high heat conductive insulating layer can be made up, as ceramic material of ceramic material or nonmetal monocrystal material
Can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, nitridation
Aluminum, carborundum, silicon oxynitride or aluminum oxynitride.The ceramic wafer that ceramic material described in the present invention can be fired by cutting
And be welded on metal basal board of the present invention, described welding method can be such as the method for soldering, such as solder,
Solder brazing or active soldering etc..Ceramic material described in the present invention can also prepare, such as by being formed in situ method
By vacuum coating method, such as conventional physical gas-phase deposite method or chemical gaseous phase depositing process prepare.
In the present invention, according to the type of other electronic devices and components, the thermal conductivity of described resin insulating barrier is 0.5～30W/mK
Scope.So heat produced by other electronic devices and components or plain conductor can be diffused away and do not build up.Described tree
The thickness of fat insulating barrier is preferably 20～500 μm, it is highly preferred that its thickness range is 20～200 μm.Because thickness if less than
20 μm, then electrical insulating property becomes insufficient, and if greater than 500 μm, then thermal diffusivity may be impaired, and heat dispersion will significantly drop
Low.As preferably, described resin insulating barrier is the resin cured matter containing thermosetting resin, firming agent and inorganic filler.This
Outward, in the hardening resin composition for forming insulating barrier, it is also possible to catalyst, silanes can also be used as required
Coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator etc..As inorganic filler, preferably have electrical insulating property and
The inorganic filler that heat conductivity is good.The granularity of inorganic filler preferably comprise mean diameter be 0.6 μm～2.4 μm and 5 μm～
Two kinds of granularities of 20 μm.By less to corase particles bigger for mean diameter and mean diameter micropartical is mixed, and it is used alone
Compare during each microgranule, can realize more filling, it is possible to obtain good heat conductivity.Additionally, shape of particle can be to pulverize
, spherical or lepidiod.
Metal basal board and anodic alumina films
The most described metal basal board is chosen as aluminum or aluminum alloy plate substrate, the fine aluminium of such as 99.99wt%, closes as aluminum
Gold such as contains Mg:2.8～3.0wt%, Mn:0.90～1.20wt%, Ti:0.1～0.2wt%, Ni:0.6～0.8wt%,
The Al of surplus and inevitable impurity；Described aluminium alloy does not the most have higher intensity, and (tension more than 100MPa is strong
Degree), and during anodized, be more beneficial for forming fine and close oxide-film.The thickness of described aluminum or aluminum alloy plate substrate is 2～20
Mm, the thickness of anodic alumina films is 10～20 μm；The insulation endurance of described anodic alumina films is more than 1000 hours,
Described insulation endurance refer to 50 DEG C, on anodic alumina films, apply the DC voltage of 100V under conditions of 85%RH,
And resistance value is dropped to the time of 106 below Ω.
The preparation method of described anode oxide film is as follows: is first carried out aluminum or aluminum alloy plate substrate and scale removal, then exists
Carrying out anodized in aqueous citric acid solution, described aqueous citric acid solution contains: the citric acid of 20～35g/L, 3～5g/L
DL-cysteine, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L；Liquid temperature be 10～20 DEG C, electric current density be
0.5～1A/dm2, electrolysis process 20～30min.Use above-mentioned anode oxidation method, owing to employing citric acid is as processing solution,
And with the addition of appropriate hydrogen peroxide and DL-cysteine wherein, aluminum ions supply is enabled to when anodized
Sufficient such that it is able to obtain the anodic alumina films of densification, thickness be 10 μm and above under conditions of, even without sealing of hole
Process can meet the requirement more than 1000 hours of the insulation endurance.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out aluminium sheet and scale removal, then in Fructus Citri Limoniae
Carrying out anodized in aqueous acid, described aqueous citric acid solution contains: the citric acid of 20g/L, the DL-cysteine of 3g/L,
The hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, electrolysis process 20min.
The dense anodic oxide aluminum film insulation endurance obtained was more than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out aluminium sheet and scale removal, then in Fructus Citri Limoniae
Carrying out anodized in aqueous acid, described aqueous citric acid solution contains: the citric acid of 30g/L, the DL-cysteine of 4g/L,
The hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 20min.
The dense anodic oxide aluminum film insulation endurance obtained was more than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out aluminium sheet and scale removal, then in Fructus Citri Limoniae
Carrying out anodized in aqueous acid, described aqueous citric acid solution contains: the citric acid of 35g/L, the DL-cysteine of 5g/L,
The hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, electrolysis process 30min.
The dense anodic oxide aluminum film insulation endurance obtained was more than 1500 hours.
Embodiment 4
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out above-mentioned aluminium alloy plate and scale removal, so
After in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, the DL-of 3g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 20min.The dense anodic oxide aluminum film insulation endurance obtained was more than 1200 hours.
Embodiment 5
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out above-mentioned aluminium alloy plate and scale removal, so
After in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, the DL-of 4g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 20min.The dense anodic oxide aluminum film insulation endurance obtained was more than 1200 hours.
Embodiment 6
The preparation method of the anode oxide film described in the present embodiment is as follows: be first carried out above-mentioned aluminium alloy plate and scale removal, so
After in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, the DL-of 5g/L
Cysteine, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L；Liquid temperature be 10 DEG C, electric current density be 1A/dm2, at electrolysis
Reason 30min.The dense anodic oxide aluminum film insulation endurance obtained was more than 1500 hours.
Comparative example 1
Aluminium sheet is carried out pickling descaling, in oxalic acid solution, then carries out anodized, containing 35g/L in described oxalic acid solution
Oxalic acid, the oxalic acid aluminum of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；Then at boric acid
Aqueous solution carries out sealing treatment, the boric acid containing 0.5mol/L and the sodium tetraborate of 0.2mol/L in described boric acid aqueous solution；Sealing of hole
Condition is liquid temperature 20 DEG C, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 300～500 hours.
Comparative example 2
Aluminium sheet is carried out pickling descaling, in sulfuric acid solution, then carries out anodized, containing 35g/L in described sulfuric acid solution
Oxalic acid, the aluminum sulfate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；Then at boric acid
Aqueous solution carries out sealing treatment, the boric acid containing 0.5mol/L and the sodium tetraborate of 0.2mol/L in described boric acid aqueous solution；Sealing of hole
Condition is liquid temperature 20 DEG C, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 250～400 hours.
Comparative example 3
Above-mentioned aluminium alloy plate is carried out pickling descaling, in oxalic acid solution, then carries out anodized, in described oxalic acid solution
Containing the oxalic acid of 35g/L, the oxalic acid aluminum of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；So
After in boric acid aqueous solution, carry out sealing treatment, containing the boric acid of 0.5mol/L and the tetraboric acid of 0.2mol/L in described boric acid aqueous solution
Sodium；Sealing of hole condition is liquid temperature 20 DEG C, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 300～600
Hour.
Comparative example 4
Above-mentioned aluminium alloy plate is carried out pickling descaling, in sulfuric acid solution, then carries out anodized, in described sulfuric acid solution
Containing the oxalic acid of 35g/L, the aluminum sulfate of 5g/L；Liquid temperature be 20 DEG C, electric current density be 1A/dm2, electrolysis process 30min；So
After in boric acid aqueous solution, carry out sealing treatment, containing the boric acid of 0.5mol/L and the tetraboric acid of 0.2mol/L in described boric acid aqueous solution
Sodium；Sealing of hole condition is liquid temperature 20 DEG C, electric current density 1A/dm2, electrolytic processing time 5 minutes, its insulation endurance is 300～500
Hour.
High heat conductive insulating layer
In the present invention, the heat conductivity of described high heat conductive insulating layer is in the range of 50～500W/mK.Described high heat conductive insulating layer
Thickness range is 20～500 μm, for example, 50 μm.Described high heat conductive insulating layer can be by ceramic material or nonmetal monocrystal material
Make.Can select as ceramic material but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, nitrogen
SiClx, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride.Ceramic material described in the present invention can lead to
Crossing and cut the ceramic wafer fired and be welded on metal basal board of the present invention, described welding method can be such as soldering
Method, such as solder, solder brazing or active soldering etc., be preferably used active soldering, and the composition of described active soldering such as may be used
To select the Si and the Cu of surplus of Al, 3.00wt% of Ti, 2.00wt% of 2.25wt%；Such as can select 1.25wt% Ti,
The Cu of 32.250wt% and the Ag of surplus；Such as can select the Cu of In, 27.25wt% of Ti, 12.50wt% of 1.25wt% and remaining
The Ag of amount.Additionally, described high heat conductive insulating layer can also use evaporation, sputtering plating or reactive ion plating and chemical gaseous phase to sink
Long-pending method prepares, for example with applying for artificial Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, Publication No. CN103354221A,
CN103353065A、CN103354219A、CN103354222A、CN103354698A、CN103354220A、
CN103354269A、CN103354697A、CN103354699A、CN103354254A、CN103327736A、
CN103327735A, CN103325921A, CN103338588A, or notification number be CN203340413U,
CN203339213U、CN203339139U、CN203340409U、CN203340407U、CN203340408U、
Preparation method described in CN203339224U, CN203336288U, CN203339140U and CN203339145U, and
Above-mentioned document is recorded here, as reference.
Resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and described resin insulating barrier
Thickness range is preferably 20～500 μm.
Described resin insulating barrier is formed by the hardening resin composition containing thermosetting resin, firming agent and inorganic filler, additionally,
In the hardening resin composition for forming insulating barrier, it is also possible to other component etc. can also be used as required.Form bar
Part such as can solidify 30～180 seconds under conditions of 160～180 DEG C.As preferably, described hardening resin composition contains
The benzene alkene of the VTES of Bisphenol F diglycidyl ether, 12.5～15.0wt%, 8.0～the 10.0wt% of 55～60wt%
Acid-2-hydroxy methacrylate, 3.2～the 2 of the phthalic anhydride of the TSIM of 5.0wt%, 2.5～3.0wt%, 0.5～1.0wt%,
6-ditertbutylparacresol, and the alumina particulate that mean diameter is 2.0 μm of 3～8wt% and 3～8wt% mean diameter be
The alumina particulate of 5.0 μm.
Embodiment 7
Hardening resin composition described in the present embodiment contains the Bisphenol F diglycidyl ether of 55wt%, the vinyl of 15.0wt%
Triethoxysilane, the benzene olefin(e) acid-2-hydroxy methacrylate of 10.0wt%, the TSIM of 5.0wt%, the O-phthalic of 2.5wt%
Anhydride, the 2,6 ditertiary butyl p cresol of 1.0wt%, and alumina particulate that the mean diameter of 5.5wt% is 2.0 μm and 6.0wt%
The alumina particulate that mean diameter is 5.0 μm.When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 20～25
W/mK。
Embodiment 8
Hardening resin composition described in the present embodiment contains the Bisphenol F diglycidyl ether of 60wt%, the vinyl of 12.5wt%
Triethoxysilane, the benzene olefin(e) acid-2-hydroxy methacrylate of 8wt%, the TSIM of 3.2wt%, the phthalic acid of 3.0wt%
Acid anhydride, the 2,6 ditertiary butyl p cresol of 1.0wt%, and alumina particulate that the mean diameter of 6.3wt% is 2.0 μm and 6.0wt%
The alumina particulate that mean diameter is 5.0 μm.When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 22～26
W/mK。
Embodiment 9
Hardening resin composition described in the present embodiment contains the vinyl three of the Bisphenol F diglycidyl ether of 58wt%, 15wt%
Ethoxysilane, the benzene olefin(e) acid-2-hydroxy methacrylate of 10wt%, the TSIM of 5wt%, the phthalic anhydride of 3.0wt%,
The 2,6 ditertiary butyl p cresol of 1.0wt%, and alumina particulate that the mean diameter of 4wt% is 2.0 μm and the average particle of 4wt%
Footpath is the alumina particulate of 5.0 μm.When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 18～22W/mK.
Embodiment 10
Hardening resin composition described in the present embodiment contains the 2-methyl miaow of the Bisphenol F diglycidyl ether of 78wt%, 5wt%
Azoles, the phthalic anhydride of 3.0wt%, the 2,6 ditertiary butyl p cresol of 1.0wt%, and the mean diameter of 6.5wt% is 2.0 μm
Alumina particulate and the alumina particulate that mean diameter is 5.0 μm of 6.5wt%.The insulation resin layer thickness of preparation is 50 μm
Time, recording its thermal conductivity is 15～20W/mK.
Resin insulating barrier described in the present invention, in addition to needing to meet required thermal conductivity, also should have the resistance to thermo-color of excellence
Property.In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, 170 DEG C,
8N/mm2And hardening time be processed under conditions of 120 seconds a diameter of 50mm × thickness be the disk of 3mm as sample,
Then place 24 hours under conditions of 150 DEG C, utilize its resistance to thermochromism of perusal, find the sample described in embodiment 7-9
Do not find metachromatism, and the slightly variable color of the sample described in embodiment 10 or there occurs variable color.
Metal pattern circuit
According to actual needs, at described resin insulating barrier, or on described resin insulating barrier and described high heat conductive insulating layer
It is each formed with metal pattern circuit.Described edge layer can form conductive copper films by bonding or pressing Copper Foil, or can lead to
Cross sputtering, chemical plating (needing to activate in advance) forms copper film.The thickness of described copper film for example, 2～5 μ m-thick, then exists
Carry and on described copper film, coat photoresist, then utilize metal lithographic mask to carry out photoetching, more developed formation metal on litho machine
Pattern circuit, or, use the method for silk screen printing directly to form the figure of conductive metal layer；After toasted solidification, then with wet
Described aluminium lamination is etched by method etch process, i.e. available described metal pattern circuit after etching.
For the ordinary skill in the art, specific embodiment simply combines accompanying drawing and is exemplarily described the present invention,
Obviously the present invention implements and is not subject to the restrictions described above, as long as the method design that have employed the present invention is carried out with technical scheme
The improvement of various unsubstantialities, or the most improved design by the present invention and technical scheme directly apply to other occasion, all
Within protection scope of the present invention.
Claims (7)
1. high heat radiation and a semiconductor device circuit substrate for high thermal conduction characteristic, including metal basal board, it is special
Levy and be: be formed with resin insulating barrier and high heat conductive insulating layer on described metal basal board, and described high heat conduction is exhausted
Edge layer is used as the pedestal of semiconductor components and devices, and described resin insulating barrier is used as the pedestal of other electronic devices and components, and
And described semiconductor components and devices is electrically connected with by metal connector with other electronic devices and components described；And it is described
The heat conductivity of high heat conductive insulating layer is in the range of 50～500W/mK, and thickness is 20～500 μm；Described tree
The thermal conductivity of fat insulating barrier is 0.5～30W/mK, and thickness is 20～500 μm；Described metallic substrate surfaces warp
Cross surface process and be formed with anodic alumina films in its surface；The preparation method of described anode oxide film is such as
Under: first aluminum or aluminum alloy plate substrate is carried out and scale removal, in aqueous citric acid solution, then carries out anode
Oxidation processes, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the DL-half Guang ammonia of 3～5g/L
Acid, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L；Liquid temperature be 10～20 DEG C, electric current close
Degree is 0.5～1A/dm2, electrolysis process 20～30min；The thickness of described anodic alumina films is 10～20 μ
m；The insulation endurance of described anodic alumina films is more than 1000 hours, and described insulation endurance is
Refer to 50 DEG C, on anodic alumina films, apply the DC voltage of 100V under conditions of 85%RH, and by electricity
Resistance decrease is to 106The time of below Ω.
Semiconductor device circuit substrate the most according to claim 1, it is characterised in that: described metal is even
Junctor is to use silver, gold or the lead-in wire of copper, bulge and/or bridge material.
High heat radiation the most according to claim 1 and 2 and the semiconductor device circuit substrate of high thermal conduction characteristic,
It is characterized in that: described semiconductor components and devices be IGBT bipolar chip in inverter circuit, cpu chip,
Wireless communications chips, managing chip or other semiconductor chip.
High heat radiation the most according to claim 1 and the semiconductor device circuit substrate of high thermal conduction characteristic, its
It is characterised by: there is on described metal basal board multiple resin insulating barrier and multiple high heat conductive insulating layer；And it is described
It is disposed adjacent between resin insulating barrier or is spaced setting；Between described high heat conductive insulating layer adjacent or interval set
Put；It is disposed adjacent between described resin insulating barrier and described high heat conductive insulating layer or is spaced setting.
High heat radiation the most according to claim 1 and the semiconductor device circuit substrate of high thermal conduction characteristic, its
Be characterised by: described metal basal board through surface treatment procedure, described surface treatment procedure comprise roughening treatment,
Any one or a few in pickling, alkali cleaning, acid etching or alkaline etching operation.
High heat radiation the most according to claim 1 and the semiconductor device circuit substrate of high thermal conduction characteristic, its
It is characterised by: described aluminium alloy base plate contains Mg:2.8～3.0wt%, Mn:0.90～1.20wt%, Ti:
0.1～0.2wt%, Ni:0.6～0.8wt%, surplus is Al and inevitable impurity.
High heat radiation the most according to claim 1 and the semiconductor device circuit substrate of high thermal conduction characteristic, its
It is characterised by: described resin insulating barrier is by the curable resin containing thermosetting resin, firming agent and inorganic filler
Compositions is made.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807572A (en) * | 2010-02-25 | 2010-08-18 | 友达光电股份有限公司 | Etching solution, active component array substrate and method for manufacturing active component array substrate |
| CN102376861A (en) * | 2010-08-16 | 2012-03-14 | 富士胶片株式会社 | Radiation reflection plate for LED |
| CN103338588A (en) * | 2013-06-04 | 2013-10-02 | 苏州晶品光电科技有限公司 | A highly conductive thermal insulating metal base printed circuit board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008105527A1 (en) * | 2007-03-01 | 2008-09-04 | Nec Lighting, Ltd. | Led device and illuminating apparatus |
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2014
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807572A (en) * | 2010-02-25 | 2010-08-18 | 友达光电股份有限公司 | Etching solution, active component array substrate and method for manufacturing active component array substrate |
| CN102376861A (en) * | 2010-08-16 | 2012-03-14 | 富士胶片株式会社 | Radiation reflection plate for LED |
| CN103338588A (en) * | 2013-06-04 | 2013-10-02 | 苏州晶品光电科技有限公司 | A highly conductive thermal insulating metal base printed circuit board |
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Address after: Wujiang District of Suzhou City, Jiangsu province 215000 Lili town FENHU Road No. 558 Patentee after: Suzhou Jing Pin new material limited company Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: Suzhou Jingpin Optical-Electronical Technology Co., Ltd. |