CN103887375A - PSS etching method - Google Patents

PSS etching method Download PDF

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CN103887375A
CN103887375A CN201210562272.1A CN201210562272A CN103887375A CN 103887375 A CN103887375 A CN 103887375A CN 201210562272 A CN201210562272 A CN 201210562272A CN 103887375 A CN103887375 A CN 103887375A
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etching
subprocess
pss
frequency power
bottom electrode
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CN103887375B (en
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刘海鹰
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound

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Abstract

The invention provides a PSS (Patterned Sapphire Substrate) etching method. The method includes: providing the substrate and manufacturing a mask with a needed pattern on the substrate; etching the substrate according to a main etching process; etching the substrate according to an over etching process; and ending the etching. The main etching process includes N etching sub-processes and as for two adjacent etching sub-processes, a lower-electrode radio-frequency power adopted in the latter etching sub-process is higher than a lower-electrode radio-frequency power which is adopted by the former etching sub-process and N is an integer larger than or equal to 3. The PSS etching method provided by the embodiment of the invention inhibits a problem, which exists in the prior art, that a method which reduces the lower-electrode power causes a large increase of the bottom width of the PSS pattern and causes reduction of production efficiency so that the bottom width is effectively inhibited and a selection ratio of the whole main etching process is improved at the same time and the PSS etching process is improved and the growth quality of a GaN epitaxy is improved.

Description

A kind of PSS patterned substrate lithographic method
Technical field
The present invention relates to plasma technique, particularly a kind of PSS patterned substrate lithographic method.
Background technology
Along with the maturation of white light technology is sent yellow light mix and become in the continuous progress, particularly blue-light excited fluorescent material of GaN based light-emitting diode (Light Emitting Diode, LED) technology, normal lighting can be realized by the mode of low cost, high life.National governments have proposed solid state lighting revolution plan one after another, have greatly promoted the develop rapidly of LED technology.GaN base LED is long, shock-resistant with its life-span, antidetonation, the excellent specific property such as energy-efficient have very wide application prospect at aspects such as image demonstration, signal designation, illumination and basic research.
Because GaN single crystal preparation is more difficult, GaN base LED device is all to prepare in Sapphire Substrate conventionally.Carry out growing GaN extension by Sapphire Substrate and have two problems: first, sapphire has very high hardness and chemical stability, and etching difficulty is larger; Secondly, have larger lattice mismatch and the difference of thermal coefficient of expansion between GaN and sapphire, the GaN film dislocation and the defect concentration that make at Grown are larger, have also affected luminous efficiency and the life-span of device.In addition, the GaN base LED internal quantum efficiency of wavelength 460nm has reached more than 70% at present, and the internal quantum efficiency of the GaN base LED of AlGaN ultraviolet light (UV), up to more than 80%, except internal quantum efficiency, also needs further to improve the external quantum efficiency of GaN base LED.At present, the extraction efficiency that is grown in the GaN base LED in Sapphire Substrate is relatively low, needs further to improve the extraction efficiency of GaN base LED, improves the external quantum efficiency of GaN base LED.
In order to overcome the above-mentioned problem in Grown on Sapphire Substrates GaN extension, and further improve the extraction efficiency of GaN base LED, patterned substrate (Patterned SapphireSubstrates, the PSS) technology generally adopting at present completes the preparation of the GaN epitaxial material in Sapphire Substrate.In PSS technology, first at Grown on Sapphire Substrates dry etching mask, then by the photoetching process of standard, mask is carved to figure, afterwards, utilize ICP lithographic technique etching sapphire, and remove mask, growth GaN material thereon again, makes longitudinal extension of GaN material become horizontal extension.PSS technology can effectively reduce the dislocation density of GaN epitaxial material, thereby has reduced the non-radiative compound of active area, has reduced reverse leakage current, has improved the life-span of LED.The light that send active area, via GaN and Sapphire Substrate interface Multiple Scattering, has changed the angle of emergence of total reflection light, has increased the light of LED from the probability of Sapphire Substrate outgoing, thereby has improved the extraction efficiency of light.The reason of comprehensive above-mentioned two aspects, makes the traditional LED of emergent light brightness ratio of the LED of the upper growth of PSS improve 63%, and reverse leakage current reduces simultaneously, and the life-span of LED has also obtained prolongation.
Below, PSS technical process is described in detail.First PSS technique can comprise the steps: at present, mask is carved figure by the photoetching process of use standard, refer to Fig. 1, it shows the PSS film layer structure schematic diagram after photoetching process, wherein, upper strata 11 is rendered as columniform mask for after photoetching, and lower floor 12 is Sapphire Substrate, and the photoresistance thickness of Sapphire Substrate is 1200nm ~ 3000nm.The figure cycle of mask is approximately 2500nm ~ 4000nm.Next, utilize ICP lithographic technique etching sapphire, and remove mask.Concrete, ICP etching comprises, step S1 measures virgin rubber, calculates etch period; Step S2, carries out etching according to main etching (ME) process; Step S3, carries out etching according to over etching (OE) process; Step S4, finishes etching.Wherein, in main etching process, adopt the etching gas of larger flow, and use lower radio-frequency power, thereby control the etch rate of PSS and etching selection ratio is regulated; In over etching process, with respect to main etching process, adopt compared with the etching gas of low discharge and higher radio-frequency power, the pattern (profile) to PSS figure is modified.Wherein, the height of PSS figure and bottom width are definite by the etching result of main etching step, and height and the bottom width impact of over etching step on PSS figure is little.Refer to Fig. 2, show the shape appearance figure of the PSS graph substrate sheet after a kind of etching.As shown in Figure 2, PSS figure is class taper shape, and figure height is about 1.5 microns of left and right.
Modal PSS pattern piece is 2:1 cycle graph sheet, i.e. photoresist bottom width on the market at present: photoresist spacing is 2:1.For improving the crystal mass of extension GaN film, need to keep the smooth of sidewall etching on the one hand; On the other hand, after etching, the spacing of figure can not be too small, and in general, highly higher, figure spacing is larger, is more beneficial to epitaxial growth, and this just need to be to select ratio and etching bottom width to control simultaneously.
In main etching step, conventionally can adopt higher etching selection ratio, thereby obtain highly higher PSS figure.In order to improve etching selection ratio, in current technology, conventionally by reducing the method for lower electrode power, still reducing lower electrode power has caused rolling up of bottom width; And, reduce the decline that lower electrode power can be brought etch rate, in production in enormous quantities, can cause the decline of production efficiency.
Summary of the invention
The invention provides a kind of PSS patterned substrate lithographic method and be intended at least one of solve the problems of the technologies described above, improve the problem that rolls up and cause thus production efficiency to decline of the PSS figure bottom width that the method for etching ratio causes for the PSS etching that solves prior art by reducing lower electrode power.
In order to realize foregoing invention object, the embodiment of the present invention provides a kind of PSS patterned substrate lithographic method, comprising:
Substrate is provided, and makes the mask with required figure on substrate;
According to main etching process, substrate is carried out to etching;
According to over etching process, substrate is carried out to etching;
Finish etching;
Wherein, described main etching process comprises N etching subprocess, for two adjacent etching subprocess, the bottom electrode radio-frequency power that the bottom electrode radio-frequency power that a rear etching subprocess adopts adopts higher than previous etching subprocess, N is more than or equal to 3 integer.
Preferably, described N is less than or equal to 100.
Preferably, described N is less than or equal to 10.
Preferably, the shared process time of each etching subprocess is that the bottom electrode radio-frequency power using according to each etching subprocess is determined.
Preferably, N is 3, and described N etching subprocess is respectively the first etching subprocess, the second etching subprocess and the 3rd etching subprocess.
Preferably, the process time of described the first etching subprocess accounts for 20～40% of the whole main etching process time, the process time of described the second etching subprocess accounts for 40～70% of the whole main etching process time, and described the 3rd etching subprocess accounts for 10～20% of the whole main etching process time.
Preferably, the ratio of shared process time of described the first etching subprocess, the second etching subprocess and the 3rd etching subprocess is 3:4:1.
Preferably, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts is constant.
Preferably, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts increases gradually.
Preferably, the rate of change of described bottom electrode radio-frequency power in the time increasing is gradually 0～100W/min.
Preferably, the rate of change of described bottom electrode radio-frequency power in the time increasing is gradually 0～20W/min.
Preferably, the scope of described bottom electrode radio-frequency power is 80～700W.
Preferably, the scope of described bottom electrode radio-frequency power is 80～400W.
Preferably, in described N etching subprocess, the air pressure range adopting is 2～30mT,
The top electrode radio-frequency power scope adopting is 1000～3000W, and the etching gas range of flow adopting is 50～150sccm.
Preferably, described air pressure range is 2-10mT, and described top electrode radio-frequency power scope is 1600～2500W, and described etching gas range of flow is 50～120sccm.
The present invention has following beneficial effect:
In the PSS lithographic method providing in the embodiment of the present invention, main etching process at least comprises three different etching subprocess, the bottom electrode radio-frequency power adopting in each etching subprocess increases gradually, wherein, in the starting stage of main etching process, because etching is little on the broadening impact of PSS figure, therefore can reduce largely bottom electrode radio-frequency power, obtain higher selection ratio, thereby obtain higher PSS figure height; In the interstage of main etching process, adopt the bottom electrode radio-frequency power slightly higher than the starting stage, obtain high selection ratio; In the final stage of main etching process, PSS figure broadening is comparatively obvious, need to control PSS figure broadening, now adopts higher bottom electrode radio-frequency power, plays the effect of controlling bottom width.Starting stage and final stage in main etching process adopt respectively the bottom electrode radio-frequency power lower and higher compared with prior art, the higher-wattage that wherein final stage adopts can effectively suppress bottom width, simultaneously, the high power that the lower-wattage that starting stage adopts can effectively make up final stage is to putting forward the adverse effect of high selectivity, thereby improves the selection ratio of whole main etching process.Therefore, the PSS lithographic method providing by the embodiment of the present invention improves the selection ratio of whole main etching process in effectively suppressing bottom width, has improved PSS etching technics, has improved the growth quality of GaN extension.
Brief description of the drawings
Fig. 1 is the PSS film layer structure schematic diagram after photoetching process in prior art;
Fig. 2 is the shape appearance figure of the PSS graph substrate sheet after etching in prior art;
Fig. 3 A is the change curve of selecting ratio in main etching process;
Fig. 3 B is the change curve of PSS figure bottom width in main etching process;
The schematic flow sheet of the PSS patterned substrate lithographic method that Fig. 4 provides for the embodiment of the present invention;
Fig. 5 A is the change curve of the bottom electrode radio-frequency power in main etching process in prior art;
The change curve of a kind of bottom electrode radio-frequency power that Fig. 5 B provides for the embodiment of the present invention;
The change curve of the another kind of bottom electrode radio-frequency power that Fig. 6 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, the PSS patterned substrate lithographic method embodiment of the present invention being provided below in conjunction with accompanying drawing is described in detail.
In order to suppress the broadening of PSS figure bottom width in PSS technique, one group selection ratio and the variation experimental data of bottom width in etching process is provided in the embodiment of the present invention, and taking this experiment as basis, the embodiment of the present invention has proposed a kind of PSS patterned substrate lithographic method.Refer to Fig. 3 A, it shows the change curve of selecting ratio in main etching process, in Fig. 3 A, select to reduce afterwards than changing to present first to raise, similar parabolical rule, wherein, selects than occurring between the 10min-15min of main etching process from being increased to the breakover point reducing.Refer to Fig. 3 B, it shows the change curve of PSS figure bottom width in main etching process, in Fig. 3 B, at the front 10min of main etching process, the increasing degree of PSS figure bottom width is less, between 10min-25min, the increasing degree of figure bottom width is larger, i.e. the increase of PSS figure bottom width mainly occurs in the rear half stage of main etching process.
Based on above-mentioned experimentation, core idea of the present invention is to adopt different bottom electrode radio-frequency powers in the different phase of main etching, wherein adopt lower bottom electrode radio-frequency power in the starting stage of main etching, carry to the full extent high selectivity, reservation photoresist as much as possible, interstage at main etching adopts the bottom electrode radio-frequency power slightly higher than the starting stage, obtain high selection ratio, and at the higher bottom electrode radio-frequency power of the shorter selection of time of the final stage of main etching, thereby control bottom width, by this method, suppress rolling up of PSS figure bottom width, and improve the problem declining owing to suppressing etch rate that bottom width increase causes, thereby improve the technological effect of PSS figure, for follow-up GaN epitaxial growth technology provides good window.
Refer to Fig. 4, the schematic flow sheet of the PSS patterned substrate lithographic method providing for the embodiment of the present invention, the method comprises the steps:
Step S101, provides substrate, and makes the mask with required figure on substrate;
Step S102, carries out etching according to main etching process to substrate; Wherein, described main etching process comprises N etching subprocess, for two adjacent etching subprocess, the bottom electrode radio-frequency power that the bottom electrode radio-frequency power that a rear etching subprocess adopts adopts higher than previous etching subprocess, N is more than or equal to 3 integer;
Step S103, carries out etching according to over etching process to substrate;
Step S104, finishes etching.
In step S102, N is less than or equal to 100 integer, and preferred, N is less than or equal to 10 integer.The shared process time of each etching subprocess is that the bottom electrode radio-frequency power using according to each etching subprocess is determined.
Describe as an example of N=3 example below.In the time of N=3, main etching process comprises 3 etching subprocess, is respectively the first etching subprocess, the second etching subprocess and the 3rd etching subprocess.Refer to Fig. 5 A and Fig. 5 B, show respectively the change curve of the bottom electrode radio-frequency power in main etching process in prior art and this example, as shown in Figure 5A, the bottom electrode radio-frequency power that in prior art, main etching process adopts is 200W, as shown in Figure 5 B, in the main etching process of this example, the bottom electrode radio-frequency power that 3 etching subprocess adopt is respectively 100W, 200W and 400W.In the first etching subprocess, adopt the power less than conventional bottom electrode radio-frequency power, can carry to the full extent high selectivity, reservation photoresist as much as possible, is in the second etching subprocess in the interstage of main etching, adopts conventional lower bottom electrode radio-frequency power, can obtain high selection ratio, and be in the 3rd etching subprocess in the shorter time of the final stage of main etching, select higher bottom electrode radio-frequency power, can effectively control bottom width.
The bottom electrode radio-frequency power adopting according to predetermined PSS figure height and mask height and each etching subprocess, can obtain process time of each etching subprocess.The bottom electrode radio-frequency power being adopted taking the first etching subprocess, the second etching subprocess and the 3rd etching subprocess is respectively 100W, 200W and 400W as example, at PR(photoresist) before etching highly for the object height of 2500nm, PSS etching is 1500nm, and in three etching subprocess owing to adopting different bottom electrode radio-frequency power, corresponding photoresist etch rate (PR ER), PSS pattern etching speed (PSS ER) and select more not identical than (Sel) yet, concrete as
Shown in table 1:
Table 1 bottom electrode radio-frequency power and etch rate and select the table of comparisons of ratio
? Bottom electrode radio-frequency power PSS?ER PR?ER Sel
The first etching subprocess 100W 50 62.5 0.8
The second etching subprocess 200W 60 100 0.6
The 3rd etching subprocess 400W 80 160 0.5
The process time that can calculate three etching subprocess according to the photoresist etch rate in each subprocess shown in table 1 and PSS pattern etching speed, the result of calculating is to be respectively the process time of three etching subprocess: 8min, 10min and 6.25min.It should be noted that, the bottom electrode radio-frequency power providing in table 1 and the corresponding relation of etch rate are to obtain the in the situation that in reaction chamber, other technological parameters being constant, and be exemplary example, so that definite method of explanation process time, different reaction chambers, or in reaction chamber, the change of other technological parameters also may cause the variation of etch rate.Can find out from said process, certain at photoresist thickness, and in the certain situation of the object height of PSS etching, the process time is depended on the bottom electrode radio-frequency power adopting in each etching subprocess.
Preferably, the process time of the first etching subprocess accounts for 20～40% of the whole main etching process time, the 40～70%, three etching subprocess that the process time of the second etching subprocess accounts for the whole main etching process time accounts for 10～20% of the whole main etching process time.For example, in this example, the ratio of shared process time of the first etching subprocess, the second etching subprocess and the 3rd etching subprocess can be set to 3:4:1.In addition, according to time result, the bottom electrode radio-frequency power that can adopt each etching subprocess is adjusted, and determines the process time of each etching subprocess by the bottom electrode radio-frequency power of adjusting.
At above-mentioned PSS etching technics, in the starting stage of main etching process, because etching is little on the broadening impact of PSS figure, therefore can reduce largely bottom electrode radio-frequency power, to obtain higher selection ratio, thereby obtain higher PSS figure height; In the interstage of main etching process, adopt the bottom electrode radio-frequency power slightly higher than the starting stage, obtain high selection ratio; In the final stage of main etching process, PSS figure broadening is comparatively obvious, need to control PSS figure broadening, now adopts slightly high bottom electrode radio-frequency power, plays the effect of controlling bottom width.Starting stage and final stage in main etching process adopt respectively the bottom electrode radio-frequency power lower and higher compared with prior art, the higher-wattage that wherein final stage adopts can effectively suppress bottom width, simultaneously, the high power that the lower-wattage that starting stage adopts can effectively make up final stage is to putting forward the adverse effect of high selectivity, thereby improves the selection ratio of whole main etching process.
Therefore, the etching technics that the present embodiment provides, with respect to prior art, can, controlling under the prerequisite of broadening, obtain high selection ratio, improves the PSS height after etching.
In above-mentioned example, describe as an example of N=3 example, in addition, N also can be according to actual process need to be set to other values, for example, it is 4 that N is set, main etching process comprises 4 etching subprocess, is respectively the first etching subprocess, the second etching subprocess, the 3rd etching subprocess and the 4th etching subprocess.In main etching process, the bottom electrode radio-frequency power that 4 etching subprocess adopt is respectively 100W, 150W, 250W and 400W.The bottom electrode radio-frequency power adopting according to 4 etching subprocess, can determine to the process time of each etching subprocess, the situation that deterministic process is 3 with N is identical or similar.In the situation that main etching process comprises 4 etching subprocess, for i.e. the first etching subprocess and the second etching subprocess of starting stage of main etching, adopt the power less than conventional bottom electrode radio-frequency power, can carry to the full extent high selectivity, reservation photoresist as much as possible, for i.e. the 3rd etching subprocess of interstage of main etching, adopt conventional lower bottom electrode radio-frequency power, can obtain high selection ratio, and be in the 4th etching subprocess in the shorter time of the final stage of main etching, select higher bottom electrode radio-frequency power, can effectively control bottom width.
In the embodiment of the present invention, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts can be constant.In addition, except a single bottom electrode radio-frequency power being set to each sub-etching process, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts increases gradually.In the time that the bottom electrode radio-frequency power adopting in single etching subprocess is set to increase gradually, rate of change when it increases is 0～100W/min, preferably, is 0～20W/min.For example, can adopt ramp mode, bottom electrode radio-frequency power is carried out to profile adjustment, make its stepped rising, wherein, the rate of change of the bottom electrode radio-frequency power of each etching subprocess can be the same or different, and the bottom electrode radio-frequency power when bottom electrode radio-frequency power when end of an etching subprocess and next etching subprocess initial can be the same or different.Refer to Fig. 6, it shows the change curve of the bottom electrode radio-frequency power adopting in the main etching process that the embodiment of the present invention provides, wherein, main etching process comprises three etching subprocess, wherein, it is identical that the bottom electrode radio-frequency power of the first etching subprocess (P1) and the second etching subprocess (P2) changes slope, it is different that the bottom electrode radio-frequency power of the second etching subprocess and the 3rd etching subprocess (P3) changes slope, bottom electrode radio-frequency power when bottom electrode radio-frequency power when the end of the first etching subprocess and the second etching subprocess initial is identical, and the bottom electrode radio-frequency power when bottom electrode radio-frequency power when end of the second etching subprocess and the 3rd etching subprocess initial is also identical.In whole main etching process, bottom electrode radio-frequency power presents the trend increasing gradually.
The PSS patterned substrate lithographic method providing for the embodiment of the present invention, the typical case of the process menu in the technical process of main etching is set to (taking three etching subprocess as example, but being not limited to comprise the situation of three etching subprocess):
(1) first etching subprocess
The atmospheric pressure value of reaction chamber is that 2～10mT, top electrode radio-frequency power are that 1600～2500W, bottom electrode radio-frequency power are 80～150W, etching gas BCl 3flow be 50～150sccm, process time to account for 20～40% of main etching total time.
(2) second etching subprocess
The atmospheric pressure value of reaction chamber is that 2～10mT, top electrode radio-frequency power are that 1600～2500W, bottom electrode radio-frequency power are 150～300W, etching gas BCl 3flow be 50～150sccm, process time to account for 40～70% of main etching total time.
(2) the 3rd etching subprocess
The atmospheric pressure value of reaction chamber is that 2～10mT, top electrode radio-frequency power are that 1600～2500W, bottom electrode radio-frequency power are 300～500W, etching gas BCl 3flow be 50～150sccm, process time to account for 10～20% of main etching total time.
In the embodiment of the present invention, the scope of the bottom electrode radio-frequency power adopting in reaction chamber is 80～700W.Preferably, the scope of bottom electrode radio-frequency power is 80～400W.In N etching subprocess, the air pressure range adopting is 2～30mT, and the top electrode radio-frequency power scope adopting is 1000～3000W, and the etching gas range of flow adopting is 50～150sccm.Preferably, described air pressure range is 2-10mT, and described top electrode radio-frequency power scope is 1600～2500W, and described etching gas range of flow is 50～120sccm.
In the embodiment of the present invention, substrate is Sapphire Substrate, or the substrate of other type.Mask is generally photoresist mask.Etching technics can be selected dry etch process such as inductively coupled plasma etching technique, capacitance coupling plasma etching technics.
In the PSS lithographic method providing in the embodiment of the present invention, main etching process at least comprises three different etching subprocess, the bottom electrode radio-frequency power that each etching subprocess adopts increases gradually, wherein, in the starting stage of main etching process, because etching is little on the broadening impact of PS S figure, therefore can reduce largely bottom electrode radio-frequency power, obtain higher selection ratio, thereby obtain higher PSS figure height; In the interstage of main etching process, adopt the bottom electrode radio-frequency power slightly higher than the starting stage, obtain high selection ratio; In the final stage of main etching process, PSS figure broadening is comparatively obvious, need to control PS S figure broadening, now adopts higher bottom electrode radio-frequency power, plays the effect of controlling bottom width.Starting stage and final stage in main etching process adopt respectively the bottom electrode radio-frequency power lower and higher compared with prior art, the higher-wattage that wherein final stage adopts can effectively suppress bottom width, simultaneously, the higher bottom electrode radio-frequency power that the lower-wattage that starting stage adopts can effectively make up final stage is to putting forward the adverse effect of high selectivity, thereby improves the selection ratio of whole main etching process.Therefore, the PSS lithographic method providing by the embodiment of the present invention improves the selection ratio of whole main etching process in effectively suppressing bottom width, has improved PSS etching technics, has improved the growth quality of GaN extension.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.

Claims (15)

1. a PSS patterned substrate lithographic method, the method comprises: it is characterized in that,
Substrate is provided, and makes the mask with required figure on substrate;
According to main etching process, substrate is carried out to etching;
According to over etching process, substrate is carried out to etching;
Finish etching;
Wherein, described main etching process comprises N etching subprocess, for two adjacent etching subprocess, the bottom electrode radio-frequency power that the bottom electrode radio-frequency power that a rear etching subprocess adopts adopts higher than previous etching subprocess, N is more than or equal to 3 integer.
2. PSS lithographic method as claimed in claim 1, is characterized in that, N is 3, and described N etching subprocess is respectively the first etching subprocess, the second etching subprocess and the 3rd etching subprocess.
3. PSS lithographic method as claimed in claim 2, it is characterized in that, the process time of described the first etching subprocess accounts for 20～40% of the whole main etching process time, the process time of described the second etching subprocess accounts for 40～70% of the whole main etching process time, and described the 3rd etching subprocess accounts for 10～20% of the whole main etching process time.
4. PSS lithographic method as claimed in claim 2, is characterized in that, the ratio of shared process time of described the first etching subprocess, the second etching subprocess and the 3rd etching subprocess is 3:4:1.
5. PSS lithographic method as claimed in claim 1, is characterized in that, described N is less than or equal to 100.
6. PSS lithographic method as claimed in claim 1, is characterized in that, described N is less than or equal to 10.
7. PSS lithographic method as claimed in claim 1, is characterized in that, the shared process time of each etching subprocess is that the bottom electrode radio-frequency power using according to each etching subprocess is determined.
8. PSS lithographic method as claimed in claim 1, is characterized in that, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts is constant.
9. PSS lithographic method as claimed in claim 1, is characterized in that, in each single etching subprocess, the bottom electrode radio-frequency power that it adopts increases gradually.
10. PSS lithographic method as claimed in claim 9, is characterized in that, the rate of change of described bottom electrode radio-frequency power in the time increasing is gradually 0～100W/min.
11. PSS lithographic methods as claimed in claim 9, is characterized in that, the rate of change of described bottom electrode radio-frequency power in the time increasing is gradually 0～20W/min.
12. PSS lithographic methods as claimed in claim 1, is characterized in that, the scope of described bottom electrode radio-frequency power is 80～700W.
13. PSS lithographic methods as claimed in claim 12, is characterized in that, the scope of described bottom electrode radio-frequency power is 80～400W.
14. PSS lithographic methods as claimed in claim 1, it is characterized in that, in described N etching subprocess, the air pressure range adopting is 2～30mT, the top electrode radio-frequency power scope adopting is 1000～3000W, and the etching gas range of flow adopting is 50～150sccm.
15. PSS lithographic methods as claimed in claim 14, is characterized in that, described air pressure range is 2-10mT, and described top electrode radio-frequency power scope is 1600～2500W, and described etching gas range of flow is 50～120sccm.
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