CN103872024A - High frequency anti-electromagnetic interference power module - Google Patents
High frequency anti-electromagnetic interference power module Download PDFInfo
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- CN103872024A CN103872024A CN201410055747.7A CN201410055747A CN103872024A CN 103872024 A CN103872024 A CN 103872024A CN 201410055747 A CN201410055747 A CN 201410055747A CN 103872024 A CN103872024 A CN 103872024A
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- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 64
- 238000010521 absorption reaction Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
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- 239000000843 powder Substances 0.000 claims description 4
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- 238000000034 method Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The invention discloses a high frequency anti-electromagnetic interference power module, comprising a ceramic copper clad substrate, a power chip, a silica gel layer and a cover plate; the high frequency anti-electromagnetic interference power module is also provided with an electromagnetic radiation absorption layer; the electromagnetic radiation absorption layer is arranged at the surface of the upper part of the silica gel layer and is made of a material approximate to the mechanical performance of the silica gel. According to the high frequency anti-electromagnetic interference power module, the influence of the power module radiation type electromagnetic interference to electronic equipment in the high-speed switching on/off process can be reduced.
Description
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Technical field
The present invention relates to electronic applications, refer more particularly to the anti-electromagnetic interference power model of a kind of high frequency.
Background technology
Insulated gate bipolar transistor npn npn (Insulated Gate Bipolar Transistor, IGBT) as voltage power supply type device, have and control conveniently, switching speed is fast, the advantages such as safety operation area is large, are just becoming more and more extensive in the application in power inverter field.The development trend of current power inverter is further reduced volume, reduces weight.Can meet one of method of this growth requirement is exactly the switching frequency that constantly promotes inverter.
At present, the IGBT device taking monocrystalline silicon as technical foundation, more than switching frequency can reach 20kHz.Along with the continuous lifting of IGBT device performance, as the development of groove-shaped grid and a termination techniques, stepping up the step of 50kHz switching frequency taking silica-based IGBT as basic inverter.On the other hand, the development taking carborundum (SiC) device as the broad stopband device of representative, making further the switching frequency of high-voltage inverter to be risen to 100kHz becomes possibility above.
But along with the continuous lifting of switching frequency, it is increasing that di/dt can become, switching circuit will produce serious electromagnetic interference (Electromagnetic Interferenc, EMI).Under the condition of high power density, it is very approaching that the distance of power device, drive circuit and logic control circuit becomes, how under so complicated electromagnetic environment, effectively control EMI, and make inverter meet electromagnetic compatibility (Electromagnetic Compatibility, EMC) requirement of standard, has become one of main challenge of current inverter design and manufacture.
Suppressing the most effectual way of electromagnetic interference is that electromagnetic field is shielded, and the power line between two electrified bodies is blocked with conductor, or shields with the object of the magnetic material handle generation disturbing magnetic field of high permeability.According to S.A.Schelkunoff electromagnetic shielding theory, when Electromagnetic Wave Propagation is surperficial to shielding material, will occur in the reflection loss of incidence surface, be not reflected the absorption loss that part enters shield, and the multipath reflection loss producing in shield.Absorption loss is electric dipole in conductor material and the result of magnetic dipole and electromagnetic field effect.The thickness of absorptivity and screen, conductance and permeability are relevant, and these numerical value are larger, and the effect of electromagnetic wave absorption is better.Therefore, dilval etc. have the material of high permeability, and electromagnetic wave is had to good absorbent properties.On the other hand, reflection loss is charged particle and the interactional result of electromagnetic field in conductor material, has the material of high conductivity and low permeability, and reflection loss is obvious.Therefore, the metal such as gold, silver, copper is effective reflection of electromagnetic wave material.In absorbed layer inside, after overdamping, there is reflection and transmission at another side in electromagnetic wave, and reflected wave enters absorbed layer inside again, so, after repeatedly, electromagnetic wave energy is decayed rapidly.Under frequency electromagnetic waves situation, multipath reflection consumption is substantially negligible.In order effectively to control the electromagnetic interference of high-frequency power device, can pass through the electromagnetic shielding material of reasonable combination different characteristics, by the combination of reflection loss and absorption loss, obtain best electromagnetic interference assimilation effect.But need good earth ability effectively for the conductor of electric field shielding, if the conductor of electric field shielding can not good earth, the conductor of electric field shielding does not only have shielding action, on the contrary electric field radiation is disturbed to the effect that plays relay race, because electric field also can make shielded conductor charged by induction.
Summary of the invention
For solving the problem of above-mentioned prior art, the present invention proposes the anti-electromagnetic interference power model of a kind of high frequency, can effectively reduce power model electromagnetic interference, can make power model work under higher switching frequency, and on emi characteristics, still meet the design standard requirement of inverter.The power model of applicable high frequency (more than 50kHz) application of making according to the present invention, for the miniaturization of inverter provides feasible condition, also be novel broad stopband power model simultaneously, as the reliably working of carborundum (SiC) power model under higher switching frequency, provide guarantee.
The invention discloses the anti-electromagnetic interference power model of a kind of high frequency, comprise ceramic copper-clad base plate, power chip, silicon gel layer and cover plate, the anti-electromagnetic interference power model of described high frequency is also provided with absorption of electromagnetic radiation layer, described absorption of electromagnetic radiation layer is arranged on described silicon gel layer upper face, is made up of the material close with silicon gel mechanical performance.
Further, above described absorption of electromagnetic radiation layer, the place of Yi Duan space, interval, be provided with the ELECTROMAGNETIC RADIATION REFLECTION layer for conducting electricity.
Further, absorption of electromagnetic radiation layer and described silicon gel layer combine.
Further, absorption of electromagnetic radiation layer is the silicon gel layer that adds Fe-Ni Alloy Powder.
Further, ELECTROMAGNETIC RADIATION REFLECTION layer is arranged in described cover plate, combines by mode and the described cover plate of physics mold pressing.
Further, the material of ELECTROMAGNETIC RADIATION REFLECTION layer is copper or silver or aluminium, or copper silver or copper aluminium or silver-colored aluminium or copper aerdentalloy.
Further, ELECTROMAGNETIC RADIATION REFLECTION layer is lamellar material or Web materials.
Further, ELECTROMAGNETIC RADIATION REFLECTION layer ground connection.
Further, ELECTROMAGNETIC RADIATION REFLECTION layer carries out ground connection by the ground strip that extends cover plate, or by the direct-connected mode of lead terminal of ground strip and the anti-electromagnetic interference power model of high frequency ground connection is carried out to ground connection.
Beneficial effect of the present invention: the low electromagnetic interference power model that is applicable to frequency applications, its structure can apply to the power model of multiple different encapsulation, especially the power model under high frequency, high power density application conditions, to be reduced in the impact of power model radial pattern electromagnetic interference on electronic equipment in speed-sensitive switch process.Further, the invention provides the method for this reflector physics ground connection.Therefore, better effectiveness can, by the mode of ground connection, be obtained in reflector.
Brief description of the drawings
Fig. 1 is the process schematic diagram that electromagnetic radiation of the present invention absorbs and reflects in the anti-electromagnetic interference power model of high frequency;
Fig. 2 is the embodiment of the present invention applies absorption of electromagnetic radiation layer structural representation in the anti-electromagnetic interference power model of high frequency inside;
Fig. 3 be according to the present invention in the covering plate structure of the anti-electromagnetic interference power model of high frequency, apply the structural representation of absorption of electromagnetic radiation layer that can ground connection;
Fig. 4 be according to the present invention when the anti-electromagnetic interference power model of high frequency inside applies absorption of electromagnetic radiation layer, in covering plate structure, apply the structural representation of ELECTROMAGNETIC RADIATION REFLECTION that can ground connection.
In figure, 1, metal base plate; 2, reverse side copper layer; 3, ceramic insulating layer; 4, front copper layer; 5, solder layer; 6, power chip; 7, interconnector; 8, silicon gel layer; 9, absorption of electromagnetic radiation layer; 10, inside modules space; 11, cover plate; 12, ELECTROMAGNETIC RADIATION REFLECTION layer; 13, housing; 14, lead terminal; 15, ceramic copper-clad base; 100, the anti-electromagnetic interference power model of high frequency.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is elaborated:
As Figure 1-4, the invention provides the anti-electromagnetic interference power model 100 of a kind of high frequency, comprise, ceramic copper-clad base plate 15, power chip 6, silicon gel layer 8, cover plate 11, absorption of electromagnetic radiation layer 9, wherein, ceramic copper-clad base plate 15 is by the reverse side copper layer 2 of both sides, front copper layer 4 and middle ceramic insulating layer 3 form, absorption of electromagnetic radiation layer 9 is arranged on silicon gel layer 8 upper faces, absorption of electromagnetic radiation layer 9 combines with silicon gel layer 8, made by the material close with silicon gel mechanical performance, for example: absorption of electromagnetic radiation layer 9 can be for adding the silicon gel of Fe-Ni Alloy Powder.The anti-electromagnetic interference power model of high frequency also comprises ELECTROMAGNETIC RADIATION REFLECTION layer 12, and electromagnetic radiation is reflected and absorbed, and ELECTROMAGNETIC RADIATION REFLECTION layer 12 is arranged on described absorption of electromagnetic radiation layer 9 top, Yi Duan space, interval place.ELECTROMAGNETIC RADIATION REFLECTION layer 12 can conduct electricity, and ELECTROMAGNETIC RADIATION REFLECTION layer 12 can be arranged in cover plate 11, and ELECTROMAGNETIC RADIATION REFLECTION layer 12 is combined by mode and the cover plate 11 of physics mold pressing.These ELECTROMAGNETIC RADIATION REFLECTION layer 12 materials can be copper or silver or aluminium, or copper silver or copper aluminium or silver-colored aluminium or copper aerdentalloy, and this ELECTROMAGNETIC RADIATION REFLECTION layer 12 can be lamellar material, can be also Web materials.This ELECTROMAGNETIC RADIATION REFLECTION layer 12, with press moulding mode, can be fixed on bottom surface, centre or the surperficial position of cover plate 11, and the thickness of this layer is no more than 0.5 millimeter.ELECTROMAGNETIC RADIATION REFLECTION layer 12 can provide earth shield, its earth-shielded mode has multiple, for example: carry out ground connection by the special ground strip that extends specially cover plate, also can be by the direct-connected mode of lead terminal of ground strip and module ground connection being reached to the object of ground connection.
As shown in Figures 2 and 3; in a kind of execution mode; the anti-electromagnetic interference power model 100 of high frequency comprises metal base plate 1; metal base plate 1 can ground connection; and the reverse side copper layer 2 of ceramic copper-clad base plate 15 is connected with metal base plate 1 by scolder; the front copper layer 4 of ceramic copper-clad base plate is welded with power chip 6 by solder layer 5, and module 100 has the plastic casing 13 of insulation, and inner embedding silicon gel is with protection power chip 6 and their connecting line 7.The surface of the inner silicon gel layer 8 of module 100 is absorption of electromagnetic radiation layers 9, for having the absorption of electromagnetic radiation layer that silicon gel mechanical performance is close.The thickness of this layer material is no more than 2.0 millimeters, combines with self-adhesion characteristic and silicon gel, in the overall work temperature range of power model, cracking can not occur and drop.
As shown in Figure 4; in another kind of execution mode; the anti-electromagnetic interference power model 100 of high frequency is not established metal base plate; now the bottom surface of module 100 is the reverse side copper layer 2 of ceramic copper-clad base plate 3; the front copper layer 4 of ceramic copper-clad base plate 15 is welded with 6, power core by solder layer 5; module 100 has the plastic casing 13 of insulation, and inner embedding silicon gel is with protection power chip 6 and their connecting line 7.The surface of module 100 inner silicon gel layers is absorbed layers 9, has silicon gel mechanical performance close, and absorption of electromagnetic radiation layer 9 thickness are in 2.0 millimeters.
Concrete, as shown in Figure 1, the process that electromagnetic radiation of the present invention absorbs and reflects in the anti-electromagnetic interference power model of high frequency, electromagnetic radiation has been absorbed by absorption of electromagnetic radiation layer 9, does not have absorbed electromagnetic radiation to be reflected and absorb by ELECTROMAGNETIC REFLECTION layer 12 again.As shown in Figure 2, the anti-electromagnetic interference power model 100 of embodiment of the present invention medium-high frequency is a kind of power models, after the inner chamber of this power model carries out the embedding of silicon gel, is then cured at high temperature.Solidify after, silicon gel layer 8 and cover plate 11 between, module 100 inner chambers still leave a part of space.And absorption of electromagnetic radiation layer 9 is applied to the surface of silicon gel layer 8, becomes a part of inside modules.Silicon gel after solidifying, has surperficial self-adhesion characteristic, simultaneously due to its extremely low Young's modulus and extremely low glass transition temperature (Tg), make it can be in very wide temperature range reliably working.Therefore, the characteristic of absorption of electromagnetic radiation layer 9, the silicon gel characteristic that must use with module approaches.The material of absorption of electromagnetic radiation layer 9 is exactly originally as matrix with silicon gel, add the Fe-Ni Alloy Powder that electromagnetic wave is had to good absorption effect, and in the time meeting the following conditions, play effective absorption of the electromagnetic interference that inside modules is produced due to power chip speed-sensitive switch, be in particular in: 1. good mobility (low viscosity), can sprawl rapidly in silicon gel surface, 2. the curing temperature similar to below silicon gel layer, 3. the absorbed layer after solidifying is combined well with silicon gel, and there is similar mechanical property and temperature response with silicon gel layer, 4. the absorption of electromagnetic radiation layer after solidifying, the performance of the silicon gel layer on below does not affect.Certainly, the macromolecular material that other and silicon gelling properties are approaching, also can be used as the basis material of absorbed layer.
Please refer to shown in Fig. 3, the anti-electromagnetic interference power model 100 of its high frequency increases the ELECTROMAGNETIC RADIATION REFLECTION layer 12 of conduction in cover plate 11, copper, aluminium or its alloy that this layer material is high conductivity, and thickness is from 0.1 millimeter to 0.5 millimeter,, be embossed in together through high temperature with cover plate 11.In order to improve as far as possible the shield effectiveness to electromagnetic radiation, the area of this metal level, except module terminals lead-in wire region, preferably can cover the size area of whole cover plate.In addition, in order to solve the Issues on Static Electrification of this metal level under electromagnetic irradiation, in the non-lead terminal region of cover plate, reserve the grounding ports of this metal level, this electro-magnetic wave absorption/reflector can be received to systematically end, thereby ensure the maximum screening effectiveness to electromagnetic radiation.
Please refer to shown in Fig. 4, in the anti-electromagnetic interference power model 100 of high frequency, applied absorption of electromagnetic radiation layer 9 and ELECTROMAGNETIC RADIATION REFLECTION layer 12 simultaneously.Due to double-deck existence, can significantly improve the screening effectiveness SE of electromagnetic radiation, meanwhile, by the selection to shielding material, can, in wider frequency range, reach effective shielding to electromagnetic radiation.
Above; describe the preferred embodiments of the present invention in detail, but the claimed interest field of the present invention is not limited to this, has utilized basic conception of the present invention; various distortion and improvement that person of ordinary skill in the field carries out power model, still belong to the interest field of request of the present invention.
Claims (9)
1. the anti-electromagnetic interference power model of high frequency, comprise ceramic copper-clad base plate, power chip, silicon gel layer and cover plate, it is characterized in that, the anti-electromagnetic interference power model of described high frequency is also provided with absorption of electromagnetic radiation layer, described absorption of electromagnetic radiation layer is arranged on described silicon gel layer upper face, is made up of the material close with silicon gel mechanical performance.
2. the anti-electromagnetic interference power model of high frequency as claimed in claim 1, is characterized in that, above described absorption of electromagnetic radiation layer, the place of Yi Duan space, interval, is provided with the ELECTROMAGNETIC RADIATION REFLECTION layer for conducting electricity.
3. the anti-electromagnetic interference power model of high frequency as claimed in claim 1, is characterized in that, described absorption of electromagnetic radiation layer and described silicon gel layer combine.
4. the anti-electromagnetic interference power model of high frequency as claimed in claim 1, is characterized in that, described absorption of electromagnetic radiation layer is the silicon gel layer that adds Fe-Ni Alloy Powder.
5. the anti-electromagnetic interference power model of high frequency as claimed in claim 2, is characterized in that, described ELECTROMAGNETIC RADIATION REFLECTION layer is arranged in described cover plate, combines by mode and the described cover plate of physics mold pressing.
6. the anti-electromagnetic interference power model of high frequency as claimed in claim 3, is characterized in that, the material of described ELECTROMAGNETIC RADIATION REFLECTION layer is copper or silver or aluminium, or copper silver or copper aluminium or silver-colored aluminium or copper aerdentalloy.
7. the anti-electromagnetic interference power model of high frequency as claimed in claim 3, is characterized in that, described ELECTROMAGNETIC RADIATION REFLECTION layer is lamellar material or Web materials.
8. the anti-electromagnetic interference power model of high frequency as claimed in claim 5, is characterized in that, described ELECTROMAGNETIC RADIATION REFLECTION layer ground connection.
9. the anti-electromagnetic interference power model of high frequency as claimed in claim 8, is characterized in that, described ELECTROMAGNETIC RADIATION REFLECTION layer carries out ground connection by the ground strip that extends cover plate, or by ground strip and the direct-connected mode of lead terminal are carried out to ground connection.
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| CN201410055747.7A CN103872024A (en) | 2014-02-18 | 2014-02-18 | High frequency anti-electromagnetic interference power module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346457A (en) * | 2018-09-29 | 2019-02-15 | 华侨大学 | A kind of IGBT power module with electromagnetic isolation function |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US20030011057A1 (en) * | 2001-01-23 | 2003-01-16 | Dai Nakajima | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109346457A (en) * | 2018-09-29 | 2019-02-15 | 华侨大学 | A kind of IGBT power module with electromagnetic isolation function |
| CN109346457B (en) * | 2018-09-29 | 2021-03-23 | 华侨大学 | IGBT power module with electromagnetic isolation function |
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Application publication date: 20140618 |