CN105304589A - Power device - Google Patents
Power device Download PDFInfo
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- CN105304589A CN105304589A CN201410251124.7A CN201410251124A CN105304589A CN 105304589 A CN105304589 A CN 105304589A CN 201410251124 A CN201410251124 A CN 201410251124A CN 105304589 A CN105304589 A CN 105304589A
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- Prior art keywords
- power device
- fin
- slide glass
- side plate
- chip
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses a power device, which comprises a frame, a chip and a package body, wherein the frame comprises a slide glass, at least one first cooling fin and at least one side plate; the at least one first cooling fin is located above the slide glass; at least one side plate is connected with the edge of the slide glass and the edge of the first cooling fin; the chip is arranged on the slide glass and is located right below the first cooling fin, and forms an electrical connection together with a pin of the frame through a lead; and the package body coats the slide glass, the first cooling fin, the side plate and the chip. Through the arrangement of the first cooling fin and the side plate, the cooling area of the overall device is increased; the cooling effect of the power device is improved; meanwhile, the chip is located in a space which is surrounded by the slide glass, the first cooling fin and the side plate; an external electric field can be shielded; and interference to the chip caused by external electromagnetic radiation is prevented, so that working performance of the power device is ensured; and the service lifetime of the power device is prolonged.
Description
Technical field
The present invention relates to technical field of semiconductors, refer in particular to a kind of power device with good heat radiation and electromagnetism interference performance.
Background technology
As one of electric component that electron trade is most widely used, power device is just along high-power, high frequency, highly integrated future development, so it whether has good heat radiation and electromagnetism interference design just becomes the key factor affecting power device service behaviour and useful life.Fig. 1 is the structural representation of the power device of prior art, this power device includes a fin 10, and to be arranged on this fin 10 and to insulate the packaging body 14 of chip 13 that the slide glass 11, of isolating is arranged on this slide glass 11 by scolding tin 12 and this slide glass 11 coated and chip 13 with this fin 10, wherein, this chip 13 is formed with pin 16 by lead-in wire 15 and is electrically connected.There is the problem of following two aspects in the power device of this class formation: one, the heat that chip 13 produces when working is mainly through slide glass 11 and distribute via fin 10, owing to being subject to the size restrictions of slide glass 11 and fin 10, and sinking path is single, cause the radiating effect of power device not good; The two, power device is not designed with shielding construction to prevent external electromagnetic radiation for the electromagnetic interference of chip 13, and external electromagnetic radiation easily causes negative effect to the work of chip 13.
So, have and need the structure to existing power device to improve, to meet the user demand on market.
Summary of the invention
The invention reside in and solve heat radiation existing for existing power device and the not good technical problem of electromagnetism interference performance, a kind of power device having great heat radiation effect, effectively can prevent external electromagnetic interference is provided.
For solving the problems of the technologies described above, the present invention adopts technical scheme as described below: a kind of power device, include a framework, a chip and a packaging body, wherein, described framework includes a slide glass, at least one side plate being positioned at the first fin above described slide glass and the described slide edge of at least one link and the first fin edges; Described chip to be arranged on described slide glass and to be in immediately below described first fin, and is formed with the pin of described framework by lead-in wire and be electrically connected; Slide glass, the first fin, side plate and chip described in described packaging body coats.
In above-mentioned power device, extend to form at least one flank sheet downwards from the edge of described first fin.
In above-mentioned power device, the lower end of described flank sheet is connected to described slide glass.
In above-mentioned power device, the upper surface place that described packaging body corresponds to described first fin is formed with an opening, to expose the upper surface of described first fin.
In above-mentioned power device, described framework adopts metal material preparation.
In above-mentioned power device, described framework adopts copper standby.
In above-mentioned power device, upwards extend from the back edge of described slide glass and form described side plate, extend forward from the top edge of described side plate and form described first fin.
In above-mentioned power device, the left and right edges of described first fin is respectively formed with side fin respectively to downward-extension.
In above-mentioned power device, described power device also includes one second fin, and described slide glass is arranged on described second fin, and forms an insulating barrier between described slide glass and the second fin.
In above-mentioned power device, the thickness of described insulating barrier is 0.3 ~ 0.8mm.
Advantageous Effects of the present invention is: by the setting of this first fin and side plate, add the area of dissipation of whole device, improve the radiating effect of power device, meanwhile, this chip is in the space surrounded by slide glass, the first fin and side plate, can external electrical field be shielded, prevent external electromagnetic radiation for the interference of chip, so, be conducive to the service behaviour of guaranteed output device, and extend the useful life of power device.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing power device.
Fig. 2 is the sectional structure schematic diagram of power device of the present invention.
Fig. 3 is the decomposition texture schematic diagram of power device of the present invention.
Fig. 4 is the structural representation of the framework of power device of the present invention.
Fig. 5 is the structural representation of other embodiments of the framework of power device of the present invention.
Fig. 6 is the temperature rise curve figure of the radiator for testing different structure power device.
Embodiment
For making those of ordinary skill in the art clearly understand technical problem to be solved by this invention, technical scheme and Advantageous Effects, below in conjunction with drawings and Examples, the present invention is further elaborated.
Consult Fig. 2 to Fig. 4, in certain embodiments, this power device includes framework 20, chip 30 and a packaging body 40, wherein, this framework 20 includes the side plate 23 that a slide glass 21, the first fin 22 and be positioned at above this slide glass 21 links this slide glass 21 edge and the first fin 22 edge, this chip 30 to be arranged on this slide glass 21 and to be in immediately below this first fin 22, and be electrically connected by lead-in wire 31 and being formed with the pin 24 of this framework 20, this packaging body 40 coated this slide glass 21, first fin 22, side plate 23 and chip 30.Usually, this chip 30 is fixed on this slide glass 21 by scolding tin 32.
In certain embodiments, upwards extend and form this side plate 23 from the back edge 210 of this slide glass 21, then extend forward from the top edge 230 of this side plate 23 and form this first fin 22, the thickness of three is identical.This framework 20 can select the metal material of such as copper, silver, aluminium, aluminium alloy etc. and so on to prepare, and preferably can be copper.In the embodiment shown in the figures, according to the structure of framework 20, select that suitable metallic plate is die-cut is cut into required form, as shown in Figure 4, again side plate 23, first fin 22 folded successively and form framework 20 of the present invention, and after encapsulation, cutting the company's muscle 24 ' removed between pin 24.
Adopt the framework 20 as said structure, by the setting of this first fin 22 and side plate 23, add the area of dissipation of whole device, improve the radiating effect of power device, simultaneously, this chip 30 is made to be in the space surrounded by slide glass 21, first fin 22 and side plate 23, can external electrical field be shielded, prevent external electromagnetic radiation for the interference of chip 23, so, be conducive to the service behaviour of guaranteed output device, and extend the useful life of power device.
Preferably, extend to form at least one flank sheet 25 downwards from the edge of this first fin 22, by the setting of this flank sheet 25, the area of dissipation of power device can have been increased further to improve radiating effect, and improve the effect of shielding external electrical field further.Preferably, the lower end 250 of this flank sheet 25 is connected to this slide glass 21, to prevent in encapsulation process that the first fin 22 is excessively folding and pressure contacts lead-in wire 31.In these embodiments as shown in Figures 2 to 4, be respectively formed with side fin 25 from the left and right edges of this first fin 22 respectively to downward-extension.
In some preferred embodiments, the upper surface place that this packaging body 40 corresponds to this first fin 22 is formed with an opening 41, to expose the upper surface of this first fin 22, thus promotes the radiating effect of this power device.In certain embodiments, the first fin 22 also can complete and be coated on its inside by this packaging body 40, and certainly, compared to the power device being provided with opening 41, its radiating effect can reduce.
According to some preferred embodiments, power device also includes one second fin 50, the slide glass 21 of this framework 20 is arranged on this second fin 50, and between this slide glass 21 and second fin 50, form an insulating barrier 42 by this packaging body 40, thus the insulation of this slide glass 21 is isolated from this second fin 50.The capsulation material forming this packaging body 40 can adopt epoxide resin material, certainly, also other suitable materials in prior art can be selected, when injecting capsulation material to form this packaging body 40, the capsulation material of semi-molten state injects the gap be filled between this slide glass 21 and second fin 50, and after cooling forming, forming this insulating barrier 42, this insulating barrier 42 also forms a part for this packaging body 40.
The thickness of this insulating barrier 42 is larger, its insulating properties better (resistance to pressure is higher), but simultaneously, the heat dispersion of power device is then poorer.Each power device different to thickness of insulating layer is tested, draw the experimental data of table 1, known, when the thickness of insulating barrier 42 is 0.1 ~ 0.2mm, the heat dispersion of power device is best, but insulation property are the poorest, and when the thickness of insulating barrier 42 is 0.9 ~ 1.0mm, the working temperature of the second fin 50 is too high, exceed the maximum temperature that power device normally works, so the thickness of insulating barrier 42 remains on 0.3 ~ 0.8mm and is advisable, and not only achieves insulating requirements but also meet cooling requirements.
Table 1:
| Chip power (w) | Thickness of insulating layer (mm) | Slide glass temperature (DEG C) | Second heatsink temperature (DEG C) | Resistance to pressure (V) |
| 60 | 0.1 | 74 | 76 | 500 |
| 60 | 0.2 | 76 | 77 | 1000 |
| 60 | 0.3 | 76 | 79 | 2500 |
| 60 | 0.4 | 77 | 81 | 3000 |
| 60 | 0.5 | 78 | 83 | 3500 |
| 60 | 0.6 | 79 | 84 | 4000 |
| 60 | 0.7 | 81 | 86 | 4500 |
| 60 | 0.8 | 87 | 87 | 5000 |
| 60 | 0.9 | 89 | 93 | 5500 |
| 60 | 1.0 | 91 | 96 | 6000 |
In some preferred embodiments, this second fin 50 is formed with multiple semicircle orifice 501 with the side-walls of the contact site 500 of this insulating barrier 42, so, the contact area of packaging body 40 and the second fin 50 can be increased, strengthen adhesion between the two, ensure the strong bonded of this second fin 50 and packaging body 40, avoid loosening and even peel off between the two.In certain embodiments, the diameter design of this semicircle orifice 501 is 1.5mm, and the distance between adjacent two semicircle orifices 501 of same side-walls is 1.4mm.
This framework 20 and the second fin 50 can select same or different metal material preparation, in some preferred embodiments, based on considering of material cost, heat dispersion and processing characteristics, pure copper can be selected for framework 20, and aluminium reasonable offer second fin 50.Due to the main body of this framework 20 by plastic packaging among this packaging body 40, it for the requirement having higher heat conductivility preparing material, therefore can select the metal that conductive coefficient is higher, such as fine copper; Because the large portion of main body of this second fin 50 can nakedly be placed in outside this packaging body 40, therefore the metal that conductive coefficient takes second place relatively can be selected, such as aluminium alloy.Aluminium alloy has that the cost of material is low, good processability, advantage easily to its Surface Machining process, is suitable for preparing material as the second fin 50.
In power device as shown in Figure 2, this side plate 23 is upwards extended to form from the back edge of this slide glass 21, this the first fin 22 is extended to form forward again from the top edge of this side plate 23, certainly, those skilled in the art are appreciated that on this basis, also side plate 23 can upwards be extended to form from the left hand edge of this slide glass 21 and/or right hand edge, and extend to proper orientation from the top edge of this side plate 23 and form the first fin 22, this first fin 22 can be a slice, also can be two even multi-discs.Fig. 5 shows the structure of the framework 20 of other preferred embodiments, accompanying drawings, two side plates 23 are formed with respectively to upper extension from the left hand edge of this slide glass 21 and right hand edge, extend respectively to the middle of this slide glass 21 from the top edge of two side plates 23 and be formed with 2 first fin 22, chip to be arranged on this slide glass 21 and to be among the accommodation space that surrounded by the second fin 22, side plate 23 and slide glass 21.
The following describes the production procedure of structure power device as shown in Figures 2 to 4, in the following description, power device is as shown in Figures 2 to 4 called RUPAK I power device, and being only that the power device whether being provided with opening 41 is called RUPAK II power device by distinguishing with RUPAK I power device, the production technology of these two kinds of power devices is substantially identical.Apparently, on basis described below, those skilled in the art can know the production technology of the power device understanding other embodiments of the invention.
Step one: assembling power device core.By scolding tin 32, chip 30 is fixed on the slide glass 21 of framework 20, and uses lead-in wire 31 (bonding line) chip 31 and pin 24 to be carried out welding and form suitable electrical connection, thus form the core of power device.
Step 2: folded side plate 23 and the first fin 22, directly over this first fin 22 folding to this chip 30.
Step 3: plastic packaging is shaping.Above-mentioned power device core and the second fin 50 are placed on bed die, after matched moulds (being pressed under mold on bed die), the capsulation material of semi-molten state is injected mould, fill up the gap between slide glass 21 and the second fin 50 and whole die cavity, and the demoulding after cooling forming.Packaging body 40 due to RUPAK I power device is formed with an opening 41 to expose the upper surface of this first fin 22, need this first fin 22 be close on this bed die when plastic packaging, this bed die like this can produce one to this first fin 22 and upward pressure, this slide glass 21 is easily caused to upwarp, and cannot ensure that the gap (i.e. the thickness of insulating barrier 42) between slide glass 21 and the second fin 50 is within 0.3 ~ 0.8mm, so, when RUPAK I power device plastic packaging, also need be designed at mold ad-hoc location the thimble compressing slide glass 21, prevent slide glass 21 from upwarping by this thimble compresses this slide glass 21.Form the insulating barrier 42 between this slide glass 21 and second fin 50, the main bed die that relies on realizes for the hierarchic structure of putting the position of framework 20 and the second fin 50.
Step 4: be directed to RUPAK I power device, uses the capsulation material of liquid state to inject centre hole, shutoff centre hole after curing molding.
RUPAK of the present invention I power device selecting chip identical respectively, RUPAK II power device and existing TO220 packing forms power device, each 6 of TO220F packing forms power device, be assembled into simple work system respectively, and be fixed on the radiator of same model separately, then use same controller to set identical input power and output loading and drive four work systems runnings respectively, and test the temperature in each radiator same position every phase same amount of time, temperature as radiator is higher, illustrate that the heat that same environment facies are dispersed into radiator with the work system of operating time internal consumption Same Efficieney is more, namely the system entire thermal resistance of work system and radiator formation is little.Fig. 6 shows the temperature rise curve of each radiator, wherein T1 is the temperature rise curve of the radiator corresponding to RUPAK I power device, T2 is the temperature rise curve of the radiator corresponding to RUPAK II power device, T3 is the temperature rise curve of the radiator corresponding to TO220 packing forms power device, and T4 is the temperature rise curve of the radiator corresponding to TO220F packing forms power device.As can be seen from accompanying drawing, the heat dispersion of TO220F packing forms power device is the poorest, the heat dispersion of TO220 packing forms power device is obviously poor than the heat dispersion of RUPAK I power device and RUPAK II power device, the first fin 22 due to RUPAK II power device is overall plastic to be encapsulated within packaging body 40, and its heat dispersion is not so good as to some extent relative to RUPAK I power device.Visible, power device of the present invention is compared to the power device of prior art, and its heat dispersion has and significantly improves.
The foregoing is only the preferred embodiments of the present invention, but not any pro forma restriction is done to the present invention.Those skilled in the art can impose various equivalent change and improvement on the basis of above-described embodiment, and all equivalent variations of doing in right or modification, all should fall within protection scope of the present invention.
Claims (10)
1. a power device, is characterized in that including:
One framework (20), it includes a slide glass (21), at least one the first fin (22) and side plate (23) at the described slide glass of at least one link (21) edge and the first fin (22) edge being positioned at described slide glass (21) top;
One chip (30), it is upper and be in immediately below described first fin (22) that it is arranged at described slide glass (21), and formed with the pin (24) of described framework (20) by lead-in wire (31) and be electrically connected;
One packaging body (40), its coated described slide glass (21), the first fin (22), side plate (23) and chip (30).
2. power device as claimed in claim 1, is characterized in that: extended to form at least one flank sheet (25) downwards from the edge of described first fin (22).
3. power device as claimed in claim 2, is characterized in that: the lower end of described flank sheet (25) is connected to described slide glass (21).
4. power device as claimed in claim 1, it is characterized in that: described packaging body (40) is formed with an opening (41) corresponding to the upper surface place of described first fin (22), to expose the upper surface of described first fin (22).
5. the power device as described in any one of Claims 1 to 4, is characterized in that: described framework (20) adopts metal material preparation.
6. power device as claimed in claim 5, is characterized in that: described framework (20) adopts copper standby.
7. the power device as described in any one of Claims 1 to 4, it is characterized in that: upwards extend from the back edge (210) of described slide glass (21) and form described side plate (23), extend forward from the top edge (230) of described side plate (23) and form described first fin (22).
8. power device as claimed in claim 7, is characterized in that: the left and right edges of described first fin (22) is respectively formed with side fin (25) respectively to downward-extension.
9. power device as claimed in claim 1, it is characterized in that: described power device also includes one second fin (50), described slide glass (21) is arranged on described second fin (50), and forms an insulating barrier (42) between described slide glass (21) and the second fin (50).
10. power device as claimed in claim 9, is characterized in that: the thickness of described insulating barrier (42) is 0.3 ~ 0.8mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251124.7A CN105304589A (en) | 2014-06-06 | 2014-06-06 | Power device |
| TW103129458A TW201546991A (en) | 2014-06-06 | 2014-08-27 | Power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251124.7A CN105304589A (en) | 2014-06-06 | 2014-06-06 | Power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105304589A true CN105304589A (en) | 2016-02-03 |
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ID=55201654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410251124.7A Pending CN105304589A (en) | 2014-06-06 | 2014-06-06 | Power device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105304589A (en) |
| TW (1) | TW201546991A (en) |
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| CN106887391A (en) * | 2017-04-12 | 2017-06-23 | 上海长园维安微电子有限公司 | Suitable for the novel plastic-package structure of power MOS |
| CN108766947A (en) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | Power device with heat sinking function |
| CN108807327A (en) * | 2018-05-02 | 2018-11-13 | 泰州友润电子科技股份有限公司 | A kind of full closed insulated lead frame with free switching function |
| CN111834307A (en) * | 2019-04-19 | 2020-10-27 | 三菱电机株式会社 | Semiconductor module |
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| CN203950797U (en) * | 2014-06-06 | 2014-11-19 | 深圳市锐骏半导体有限公司 | Power device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106887391A (en) * | 2017-04-12 | 2017-06-23 | 上海长园维安微电子有限公司 | Suitable for the novel plastic-package structure of power MOS |
| CN108807327A (en) * | 2018-05-02 | 2018-11-13 | 泰州友润电子科技股份有限公司 | A kind of full closed insulated lead frame with free switching function |
| CN108766947A (en) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | Power device with heat sinking function |
| CN108766947B (en) * | 2018-07-26 | 2024-01-26 | 苏州固锝电子股份有限公司 | Power device with heat dissipation function |
| CN111834307A (en) * | 2019-04-19 | 2020-10-27 | 三菱电机株式会社 | Semiconductor module |
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