JP2003218249A - Semiconductor hollow package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency integrated circuit which operates stably by eliminating electromagnetic noise inside the high-frequency integrated circuit without complicating manufacturing processes. <P>SOLUTION: A semiconductor hollow package comprises a main body (1h) of the package for mounting a semiconductor element, the semiconductor element (1e) mounted on the main body of the package, and a lid covering the package to protect the semiconductor element. The lid is formed of a composite material made by pasting a metal (1a) and an electric wave absorbing material (1b), and the lid is so installed that an electric wave absorbing material-side of the composite material faces the semiconductor element. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor hollow package, and more particularly to a semiconductor hollow package for a high frequency integrated circuit device which can stabilize the operation of the circuit.

[0002]

2. Description of the Related Art In a device using a high frequency element, electromagnetic waves emitted from the high frequency element tend to make the operation of circuits around the element unstable. In order to prevent the influence of such an unnecessary electromagnetic wave and allow the entire device to operate stably, measures are taken to shield the high frequency element with a metal plate or the like.

On the other hand, in recent years, high frequency integrated circuits have come to be used for downsizing of devices. Since these high-frequency integrated circuits integrate elements that have been independent for each function up to now on the same substrate, the influence of electromagnetic waves in this high-frequency integrated circuit becomes a problem. Therefore, only the conventional measures for covering the high frequency integrated circuit with a shield plate, etc.
The circuit cannot be stabilized.

[0004]

As described above, according to the conventional method for preventing the influence of electromagnetic waves, the high frequency integrated circuit is covered with a shield plate such as a metal plate, so that the electromagnetic wave to the outside of the high frequency integrated circuit can be prevented. However, the problem of electromagnetic wave interference inside the high frequency integrated circuit has not been solved. That is, it is an object of the present invention to provide a high-frequency integrated circuit that solves electromagnetic noise in the high-frequency integrated circuit and operates stably without complicating the manufacturing process.

[0005]

According to the present invention, in a package body on which a semiconductor element is mounted, a semiconductor element mounted on the package body, and a semiconductor hollow package covered with a lid for protecting the semiconductor element, There is provided a semiconductor hollow package, wherein the lid is made of a composite body in which a metal and a radio wave absorbing material are bonded together, and is attached so that the radio wave absorbing material side of the composite body faces a semiconductor element.

At the outer peripheral portion of the surface of the lid facing the semiconductor element, which is in contact with the package body,
The hollow semiconductor package described above is a preferred embodiment of the present invention, in which the radio wave absorbing material is not formed and the metal exposed portion and the package body are directly bonded and hermetically sealed.

In a preferred embodiment of the present invention, the hollow semiconductor package described above or in the above is characterized in that the composite forming the lid is formed by laminating a radio wave absorbing material on a roughened metal surface. is there.

The electromagnetic wave absorbing material contains an epoxy resin, a curing agent, a curing accelerator, a wax, a flat metal magnetic material, and an inorganic filler other than the flat metal magnetic material, and the amount of the wax mixed is epoxy resin 100. 4 to parts by weight
˜20 parts by weight, and the compounding amount of the flat metallic magnetic material is M
When the volume% and the content of other inorganic fillers are S volume%, M and S are composed of a cured product of an epoxy resin composition satisfying the following conditions (A) and (B). The semiconductor hollow package described in any one of (1) to (4) is a preferred embodiment of the present invention. (A) 5 ≦ M <70 and 0 <S ≦ 65 and (B) 30 ≦ M + S ≦ 70

The flat metallic magnetic material contains at least Fe and Cr as constituent elements and has an average particle diameter of 1 μm.
The hollow semiconductor package described above, which has a specific surface area of 1 m ² / g or more and a specific surface area of 1 m ² / g or more, is a preferred embodiment of the present invention.

[0010] The above-mentioned or other characterized in that the other inorganic filler contains spherical silica having an average particle size of at least 1 μm and not more than 50 μm, and the spherical silica accounts for 50% by weight or more of the other inorganic filler. This semiconductor hollow package is a preferred embodiment of the present invention.

The semiconductor hollow package described above, characterized in that the spherical silica has a sphericity of 0.75 or more as determined by the following formula (C), is a preferred embodiment of the present invention. Sphericity = Projected area of particle / Area of circle having the same circumference as the perimeter of particle ... (C)

The curing accelerator has the general formula Ar--NH--CO--.
5. A urea derivative represented by NR ₂ (Ar is a substituted or unsubstituted aryl group, and R is a substituted or unsubstituted alkyl group which may be the same or different) and is a urea derivative. A semiconductor hollow package is a preferred embodiment of the present invention.

[0013] Any one of the above-mentioned items, characterized in that the lid is obtained by forming a radio wave absorbing material by injection molding, transfer molding or compression molding on a metal part previously inserted in a mold. The semiconductor hollow package described in 1 is a preferred embodiment of the present invention.

[0014]

1 to 5 are sectional views of an example of a semiconductor device using a hollow package according to the present invention. Semiconductor devices are package bodies 1h, 2h, 3h, 4h, 5
h, the semiconductor elements 1e, 2e, 3e, 4e, 5e, and the metal lids 1a, 2a, 3a, 4a, 5a having the electromagnetic wave absorbing materials 1b, 2b, 3b, 4b, 5b formed therein, respectively.
Wirings 1f, 2f, 3f, 4f, 5f formed on the package body for electrically connecting the semiconductor device and an external circuit,
1g, 2g, 3g, 4g, 5g, a connecting portion 1 for electrically connecting a semiconductor element and a wiring formed on a package body
d, 2d, 3d, 4d, 5d. The package body and the lid are adhered and fixed by the adhesive layers 1c, 2c, 3c, 4c, 5c, whereby the package is hermetically sealed.

The radio wave absorbing material according to the present invention is preferably made of an epoxy resin composition. The cured product of the epoxy resin composition has good adhesion to a metal, and by directly forming a film on the metal forming the lid, the metal and the electromagnetic wave absorbing material can be bonded without using an adhesive. . This eliminates the need for an adhesive application step when using an adhesive to improve productivity. Further, it is possible to prevent the adhesive agent from adhering to an unnecessary portion that causes a reduction in sealing performance, and to obtain a semiconductor hollow package having high airtightness.

As the epoxy resin constituting the epoxy resin composition of the present invention, an epoxy resin having two or more epoxy groups in one molecule is preferable, and an orthocresol novolac epoxy resin, a naphthalene skeleton-containing epoxy resin or biphenyl is particularly preferable. A skeleton-containing epoxy resin is preferably used, and any one of these may be used alone, or two or more of them may be used in combination at an appropriate ratio. The epoxy equivalent is 100 to 300 [g /
eq] is preferable.

As the curing agent in the present invention, any curing agent that can undergo a curing reaction with the above epoxy resin can be used without particular limitation. Among them, phenol resin is preferable,
Specifically, phenol novolac resin and aralkylphenol resin are preferable. The amount of the curing agent is usually 20 to 120 parts by weight, preferably 35 to 95 parts by weight, based on 100 parts by weight of the epoxy resin. From the viewpoint of the physical properties of the molded product, it is preferable that the number of phenolic hydroxyl groups is 0.5 to 2.0 per epoxy group contained in the epoxy resin, and a ratio of about 1 is preferable. .

Examples of the curing accelerator include DBU derivatives such as 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) phenol salt, phenol novolac salt and carbonate, 2-methylimidazole, 2- Phenylimidazole, 2-heptadecylimidazole, 2
-Ethyl-4-methylimidazole, 2-phenyl-4
-Imidazoles such as methylimidazole, ethylphosphine, propylphosphine, phenylphosphine,
Examples include triphenylphosphine, trialkylphosphine and the like, and organophosphine compounds, urea derivatives and the like, which are usually included in the primary phosphine, secondary phosphine and tertiary phosphine.

In particular, the general formula Ar-NH-CO-NR
Preferred are urea derivatives represented by ₂ (Ar is a substituted or unsubstituted aryl group, and R is a substituted or unsubstituted alkyl group which may be the same or different).

Among the above urea derivatives, in particular, when an alkyl urea derivative as exemplified below is contained, the composition has a significantly improved thermal stability at around 100 ° C. and a rapid curing reaction does not occur. That is, an epoxy resin composition that can be injection-molded has a curing property that curing does not progress rapidly in a cylinder around 100 ° C. and has excellent thermal stability, and that curing rapidly occurs in a mold. Can be provided. Examples of such an alkyl urea derivative include compounds represented by the following formula (1).

[0021]

[Chemical 1] (In the formula, X ₁ and X ₂ are hydrogen, halogen, a lower alkyl group,
A lower alkoxy group or a nitro group, which may be the same or different. Each R is a lower alkyl group which may be different. )

As a compound corresponding to this, for example, 3
-Phenyl-1,1-dimethylurea, 3- (p-chlorophenyl) -1,1-dimethylurea, 3- (3,4
-Dichlorophenyl) -1,1-dimethylurea, 3-
(O-methylphenyl) -1,1-dimethylurea, 3
-(P-methylphenyl) -1,1-dimethylurea,
3- (methoxyphenyl) -1,1-dimethylurea,
Examples thereof include 3- (nitrophenyl) -1,1-dimethylurea.

As another example of the alkyl urea derivative, a compound represented by the following formula (2) can be given.

[0024]

[Chemical 2] (In the formula, Y and Z are hydrogen, halogen and a lower alkyl group, and they may be the same or different. Each R is a lower alkyl group which may be different.)

The compounds corresponding to this are 1,1 '
-Phenylenebis (3,3-dimethylurea), 1,
1 '-(4-methyl-m-phenylene) -bis (3,3
-Dimethylurea) and the like.

As another example of the alkyl-based urea derivative, a compound represented by the following formula (3) can be given.

[0027]

[Chemical 3] (In the formula, each R is a lower alkyl group which may be different.)

Further, as another example of the alkyl urea derivative, compounds represented by the following formulas (4) to (6) can be mentioned.

[0029]

[Chemical 4] (In the formula, P is an integer of 0 to 5, and each R is a lower alkyl group which may be different.)

[0030]

[Chemical 5] (In the formula, each R is a lower alkyl group which may be different.)

[0031]

[Chemical 6] (In the formula, each R is a lower alkyl group which may be different.)

The lower alkyl group or lower alkoxy group of X ₁ , X ₂ and R in the above formulas (1) to (6) is a methyl group, an ethyl group, a propyl group or a butyl group, or an alkoxy group corresponding to them. Is preferred.

Further, in the formula (5), a dimethylamine adduct of 2,4-tolylene diisocyanate is exemplified, but this dimethylamine adduct has a large thermal stability at about 100 ° C. That is, the curing property suitable for injection molding is improved, that is, the curing reaction does not rapidly proceed near 100 ° C. which is set as the cylinder temperature, while the curing reaction rapidly proceeds in a higher temperature mold. For the purpose of showing, it is preferably used in an epoxy resin composition for injection molding.
These curing accelerators are preferably added in an amount of 3 to 20 parts by weight, more preferably 5 to 10 parts by weight, based on 100 parts by weight of the epoxy resin. If the compounding amount of the curing accelerator is too small, the curing time in the mold will be long, and if it is too large, the thermal stability around 100 ° C. may be impaired.

In the present invention, when the composition containing the epoxy resin, the curing agent, and the flat metal magnetic material is blended with the above-mentioned specific alkyl urea derivative curing accelerator, the thermal stability at around 100 ° C. is significantly improved. An epoxy resin composition that can be injection-molded is obtained, and a cured product obtained by subjecting it to a thermosetting reaction is useful as an electromagnetic wave shielding material and / or an electromagnetic wave absorbing material used in electronic devices.

The flat metallic magnetic material used in the present invention is an alloy powder containing Fe as a main component, more preferably an alloy powder containing at least Fe and Cr as its constituent elements, and measured by a laser diffraction method. The average particle diameter was 1 to 100 μm, the specific surface area measured by the ASTM D4567 method was 1 m ² / g or more, and further 1 to 1
It is preferably 00 m ² / g. When the flat magnetic material of the present invention contains at least Cr as a constituent element, the risk of dust explosion is greatly improved and the handling becomes safe.

Specific examples of the preferable flat metal magnetic material of the present invention include flat FeCrSi, FeCrAl,
FeSiAl, FeNi, FeSiB and the like, more preferably FeCrSi and FeCrAl can be mentioned.

The flat shape of the present invention means an electron microscope (SE
When the average thickness measured by the cross-sectional photograph according to M) is d and the average particle size measured by the laser diffraction method is D ₅₀ , D ₅₀ /
The aspect ratio defined by d is preferably 2 or more, more preferably 2 to 100, still more preferably 5 to 50.

When the degree of the flat shape is too small, the electromagnetic wave shielding ability and / or the electromagnetic wave absorbing ability becomes small, and further,
If the degree of the flat shape is too large, there is a problem in that the fluidity at the time of molding is lowered and molding cannot be performed.

As another index showing the degree of flat shape,
Average particle size and AST measured by the laser diffraction method
Determined as the product of the specific surface areas measured by the MD4567 method.
There is a flatness justified. The flatness defined in this way is
5 x 10^-6m³/ G or more 100 x 10^-6m³/ G or less
More preferably 10 × 10^-6m³/ G or more 100 x 10 ^-6
m³A flat metal magnetic material having a weight ratio of less than 1 g / g is not limited to
Can be preferably used.

Other inorganic fillers other than the flat metal magnetic material used in the present invention include talc, mica,
Calcium carbonate, clay, alumina, alumina silica,
Examples thereof include powders such as silica, zinc oxide, aluminum hydroxide, silica balloon (hollow silica), and glass, granules, beads, hollow spheres, and spheres. Among them, powder, beads, spheres and the like are preferably used. Preferred examples of other inorganic fillers include:
Alumina, glass, silica and the like can be mentioned, but silica is preferable, and spherical silica is particularly preferable.

As the spherical silica, those having an average particle diameter of preferably 1 μm or more and 100 μm or less, more preferably 1 μm to 50 μm are used. Further, the shape of silica is preferably spherical as described above, specifically, the sphericity defined by the following formula (C) is preferably 0.75 or more, and more preferably 0.8 or more. . Sphericity = Area of a circle having the same circumference as the projected area of the particle / perimeter of the particle (C) The compounding amount of the spherical silica is 50% by weight or more of the whole other inorganic filler. It is preferably 80% by weight or more.

The compounding amount of the flat metal magnetic material and the other inorganic filler is such that the compounding amount of the flat metal magnetic material is M% by volume and the compounding amount of the other inorganic filler is S% by volume. M
And S are preferably epoxy resin compositions that satisfy the following conditions (A) and (B). (A) 5 ≦ M <70 and 0 <S ≦ 65 and (B) 30 ≦ M + S ≦ 70 The volume% of each material constituting the composition is calculated from its density and blending amount.

When the compounding amount of the flat metal magnetic material is in the range satisfying the above formula, it exhibits excellent electromagnetic wave shielding ability and / or electromagnetic wave absorbing ability, but when it is too small, excellent electromagnetic wave shielding ability and / or electromagnetic wave absorbing ability is exhibited. I can't get the Noh.
Further, when the blending amount of the other inorganic filler is within the range that satisfies the above formula, the fluidity and the burr during molding are in a preferable state.

Examples of the wax used in the present invention include natural waxes such as carnauba wax and synthetic waxes. These waxes are essential when the epoxy resin composition according to the present invention is manufactured by roll mixing, and are preferably 4 to 20 parts by weight, more preferably 6 to 20 parts by weight, based on 100 parts by weight of the epoxy resin. Blended in proportion. If the amount of the wax is too small, the composition will adhere to the roll during roll mixing and thus the roll kneading property will decrease, and if the composition adheres strongly to the roll, it will be necessary to clean the roll surface. The problem that it cannot be manufactured continuously occurs. Further, if the amount of the wax compounded is too large, the wax adheres to the mold at the time of molding, and if the wax adheres to the mold too much, it is necessary to clean the mold and continuous molding cannot be performed. Occurs.

In addition to these, a silane coupling agent, a titanate coupling agent may be added to the epoxy resin composition of the present invention, if necessary, within a range not impairing the object of the present invention.
A coupling agent such as an aluminum-based coupling agent, a brominated epoxy resin, an antimony trioxide, an aluminum hydroxide, a flame retardant such as melamine polyphosphate, a colorant such as carbon black or phthalocyanine may be added.

The epoxy resin composition of the present invention can be obtained by kneading the materials constituting the epoxy resin composition by a conventionally known method. Cooling after kneading,
Milling is preferred. For example, the epoxy resin composition of the present invention can be obtained by heating and mixing with a twin-screw extruder or a hot roll, followed by cooling and pulverizing.

Next, a method of manufacturing a semiconductor hollow package according to the present invention will be described with reference to FIGS.

Semiconductor elements 1e, 2e, 3e, 4e, 5e
Package body 1h, 2h, 3h, 4h, 5
As h, there are wirings 1f, 2f, 3 for electrically connecting the semiconductor device and the external circuit to the ceramic substrate or the resin substrate.
F, 4f, 5f, 1g, 2g, 3g, 4g, and 5g are used. The semiconductor element and the package body are electrically connected to the external circuit by being electrically connected by the connecting portions 1d, 2d, 3d, 4d, 5d. In addition, the semiconductor element is preferably mounted on a conductor (electrically connected to the wirings 1g, 2g, 3g, 4g, and 5g) grounding.

In this way, the semiconductor hollow package of the present invention is completed by adhering the lid manufactured by the method described below to the package body on which the semiconductor element is mounted.

The lid according to the present invention is manufactured by bonding a radio wave absorbing material to a metal. It is preferable to bond the electromagnetic wave absorbing material to the metal by molding the electromagnetic wave absorbing material on the metal plate by the following method. As a specific example, a metal plate serving as a metal part of the lid is inserted into a mold in advance, and the epoxy resin composition according to the present invention is further molded by a molding method such as transfer molding, injection molding, or compression molding at 10 to 500 MP.
A radio wave absorbing material is formed by molding on a metal plate under the pressure of a under the molding conditions of 150 to 200 ° C. for 1 to 5 minutes.

As described above, the lid of the semiconductor hollow package used in the present invention is made of a composite body in which a metal and a radio wave absorbing material are bonded together. By using the above-mentioned epoxy resin composition as the radio wave absorbing material, the cured product has good adhesiveness to the metal, and by directly forming a film on the metal constituting the lid, no adhesive is used. The metal and the electromagnetic wave absorbing material can be bonded to. By adopting such a manufacturing method, it is possible to provide a manufacturing method with high productivity, since the step of attaching the electromagnetic wave absorbing material is unnecessary. In addition, the electromagnetic wave absorbing material can be formed on the metal plate without using an adhesive, and since the metal plate and the electromagnetic wave absorbing material have sufficient adhesive strength, there is no fear of falling off at high temperature. It is possible to provide a highly reliable lid.

When the radio wave absorbing material is formed on the metal portion of the lid by molding, it is preferable that the bonding surface of the metal portion of the lid with the radio wave absorbing material is rough. By making the surface rough, the adhesion between the electromagnetic wave absorbing material and the metal becomes stronger, and the problem that the electromagnetic wave absorbing material peels off due to heat, mechanical shock, etc. is reduced, and a lid with higher reliability can be obtained. it can.

A mechanical method or a thermal method can be exemplified as a method of roughening the bonding surface of the lid metal part with the electromagnetic wave absorbing material. Examples of the mechanical method include a dry or wet sandblast method, a water jet method, an abrasive grain method using sandpaper or a file, and a pressing method. Examples of thermal methods include laser irradiation, electric discharge machining, and methods using an oven or a furnace. When adopting these methods, if a portion not to be roughened, for example, a portion bonded to the package body, is masked in advance, only a necessary portion can be easily roughened.

The lid obtained as described above was used for the semiconductor element 1 on the side of the radio wave absorbing materials 1b, 2b, 3b, 4b, 5b.
e, 2e, 3e, 4e, 5e and the package bodies 1h, 2h, 3h, 4h, 5h and the adhesive layers 1c, 2
The semiconductor hollow package according to the present invention can be manufactured by adhering via c, 3c, 4c, and 5c.

An example of the case where the electromagnetic wave absorbing material is present in the bonding portion with the package body is shown in FIGS. In this case, as the adhesive layers 1c and 3c, an adhesive containing an epoxy resin as a main component is preferably used.

An example in which the adhesive portion to the package body is only metal is shown in FIGS. 2, 4 and 5. In this example, since the signal line of the package body and the electromagnetic wave absorber are not close to each other,
The radio wave absorber does not absorb a signal flowing through the signal line, and problems such as a decrease in gain do not occur, which is preferable. Further, by directly bonding the metal part of the lid and the ground of the package body, the potential of the metal part can be set to 0 (earth), and the operation of the high frequency element can be stabilized, which is preferable.

In this case, as the adhesive layers 2c, 4c and 5c, an adhesive containing an epoxy resin as a main component, a low melting point glass, a low melting point metal or the like can be used. Among these, low-melting-point glass and low-melting-point metal, which emit less gas at high temperature, are preferably used, and further, low-melting-point metal for electrically connecting the lid metal part and the package bodies 2h, 4h, 5h. Are more preferably used.

[0058]

Example All the raw materials described below were mixed by a Henschel mixer, then heated and mixed by a roll at a temperature of 95 ° C., and then cooled and pulverized to obtain an epoxy resin composition as a radio wave absorbing material. .

(Raw material) Orthocresol novolak epoxy resin [Nippon Kayaku
EOCN-103S, epoxy equivalent = 214g
/ Eq, density = 1.2 g / cm³] 100 parts by weight
Knoll novolac resin [Meiwa Kasei Co., Ltd., HF-3M,
Density = 1.2g / cm³] 45 parts by weight, curing accelerator [SA
U-CAT 3502T manufactured by Nappro Co., Ltd., (6)
2,4-diiso of the compound in which R is a methyl group in the formula
Cyanate substitute, density of 1 g / cm 3 in volume%³And provisional
5.1 parts by weight, spherical silica [manufactured by Denki Kagaku Kogyo KK,
FB-820, average particle size = 26.3 μm, specific surface area 3.
0m²/ G, sphericity = 0.82, average density = 2.2 g /
cm³] 200 parts by weight, flat FeCr alloy [Mitsubishi
DEM powder manufactured by Terial Co., Ltd., specific surface area = 2.80 m²/
g, average particle size = 9.7 μm, flatness = 27.2 × 10^-6
m²/ G, average thickness = 0.40 μm, aspect ratio = 2
4, average density = 7 g / cm³] 270 parts by weight, carnauba
Wax [Carnauba Wax No. 1, dense, manufactured by Kato Yoko Co., Ltd.
Degree = 1.00g / cm³] 9 parts by weight, brominated epoxy
Resin [Nippon Kayaku Co., Ltd., BREN-S, epoxy equivalent =
285 g / eq, density = 1.65 g / cm³] 27 weight
Part, antimony trioxide [manufactured by Nippon Seiko Co., Ltd., PATOX-
M, density = 5.2 g / cm ³] 5 parts by weight, silane cup
Ring agent [manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403, density
= 1.07 g / cm³] 6 parts by weight.

The epoxy resin composition thus obtained is
A metal plate (material Cu, 100 mm × 100 mm × 0.1 m) was used at a temperature of 150 ° C. for 5 minutes using a compression molding machine.
m) with a thickness of 0.5 mm, and further 10
The test piece was cut into a square of mm.

The effect of using this test piece as a lid was measured by the method shown in FIG. That is, first, by cutting a part of the coplanar line (6c) having a transmission impedance of 50Ω with a width of 4 mm, the input signal (6a) is prevented from being transmitted to the output side, and then the test with the electromagnetic wave absorbing material surface facing down. The piece is covered with an insulator (Teflon (registered trademark) sheet, thickness 0.5 m on the coplanar line so as to cover the cut portion.
m), and the electrical coupling of the input and the output was evaluated by measuring S21 of the S parameters using a vector network analyzer in this state. The results are shown in Fig. 8 (b). The input / output coupling at 10 GHz was -13.5 dB.

(Comparative Example) As shown in FIG. 7, a coplanar line (7c) obtained by cutting a part of the line only with a 10 mm square metal plate to which no electromagnetic wave absorbing material is attached as shown in FIG.
It was installed on top and the electrical coupling of input and output was evaluated in the same manner as in the example. The results are shown in Fig. 8 (a). At this time, a peak due to resonance was observed near 10 GHz. Input / output coupling at 10 GHz is -2.5 dB
Met.

From the above results, it was possible to suppress resonance by bonding the electromagnetic wave absorbing material obtained by curing the epoxy resin composition shown in the example to the inside of the metal plate. That is, a high-frequency integrated circuit with stable operation can be obtained by the semiconductor hollow package using the lid according to the present invention.

[0064]

EFFECT OF THE INVENTION The lid of the semiconductor hollow package is composed of a composite of a metal and an electromagnetic wave absorbing material, and the lid is attached so that the electromagnetic wave absorbing material side faces the semiconductor element. A malfunction can be prevented and a high-frequency integrated circuit with stable operation can be obtained. Further, by directly molding the electromagnetic wave absorbing material according to the present invention on a metal plate without using an adhesive,
It is possible to provide a lid with excellent productivity and a highly reliable semiconductor hollow package in which the electromagnetic wave absorbing material does not fall off.

[Brief description of drawings]

FIG. 1 is an example of a schematic sectional view of a semiconductor hollow package according to the present invention.

FIG. 2 is an example of a schematic sectional view of another semiconductor hollow package according to the present invention.

FIG. 3 is an example of a schematic sectional view of another semiconductor hollow package according to the present invention.

FIG. 4 is an example of a schematic sectional view of another semiconductor hollow package according to the present invention.

FIG. 5 is an example of a schematic sectional view of another semiconductor hollow package according to the present invention.

FIG. 6 is a schematic diagram showing an input / output coupling measurement method used in an example of the present invention.

FIG. 7 is a schematic diagram showing an input / output coupling measurement method used in a comparative example of the present invention.

FIG. 8 is a diagram showing the input / output coupling measurement results of an example of the present invention and a comparative example.

[Explanation of symbols]

1a, 2a, 3a, 4a, 5a Lid metal parts 1b, 2b, 3b, 4b, 5b Lid electromagnetic wave absorbing material parts 1c, 2c, 3c, 4c, 5c Adhesive layers 1d, 2d, 3d, 4d, 5d Semiconductor element and package Connection parts 1e, 2e, 3e, 4e, 5e for electrical connection with wiring formed on the body Semiconductor element 1f, 2f, 3f, 4f, 5f For package body for electrical connection between a semiconductor device and an external circuit Formed wiring 1g, 2g, 3g, 4g, 5g Wiring (ground) formed on the package body for electrically connecting the semiconductor device to an external circuit 1h, 2h, 3h, 4h, 5h Package body 6a, 7a Input Signals 6b, 7b Output signals 6c, 7c Coplanar lines 6d, 7d partially cut off Metal plate 6e Electromagnetic wave absorbing material 6f, 7f Insulator

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 23/06 H01L 23/06 C // H01L 23/02 23/02 H J (C08L 63/00 C08L 91:06 91 : 06) F-term (reference) 4J002 AE032 CC03X CD04W CD05W CD06W CE00X DC007 DE108 DE148 DE238 DJ007 DJ008 DJ018 DJ038 DJ048 DJ058 DK007 DL008 ET016 EU116 EU136 EW016 FA017 FA088 FA108 FD018 GD01A01 FD018 GG018FD01 FD156 GG01FD01 FD156 GG01FD01FD207 FD156GG01FD02 FD156 GG01FD01FD02 FA02 FA13 FB18 JA15

Claims (9)

[Claims] 1. A package main body on which a semiconductor element is mounted, a semiconductor element mounted on the package main body, and a semiconductor hollow package covered with a lid for protecting the semiconductor element, wherein the lid includes a metal and an electromagnetic wave absorbing material. A semiconductor hollow package, which is made of a bonded composite body, and is attached such that the radio wave absorbing material side of the composite body faces a semiconductor element. 2. The electromagnetic wave absorbing material is not formed on the outer peripheral portion of the surface of the lid facing the semiconductor element and in contact with the package body, and the metal exposed portion and the package body are directly bonded to each other. The semiconductor hollow package according to claim 1, which is tightly sealed. 3. The hollow semiconductor package according to claim 1, wherein the composite forming the lid is formed by bonding a radio wave absorbing material to a roughened metal surface. 4. The electromagnetic wave absorbing material contains an epoxy resin, a curing agent, a curing accelerator, a wax, a flat metal magnetic material, and an inorganic filler other than the flat metal magnetic material.
When the compounding amount of the wax is 4 to 20 parts by weight with respect to 100 parts by weight of the epoxy resin, the compounding amount of the flat metal magnetic material is M volume%, and the compounding amount of the other inorganic filler is S volume%, The semiconductor hollow package according to any one of claims 1 to 3, wherein M and S are made of a cured product of an epoxy resin composition that satisfies the following conditions (A) and (B). (A) 5 ≦ M <70 and 0 <S ≦ 65 and (B) 30 ≦ M + S ≦ 70 5. The flat metal magnetic material contains at least Fe and Cr as constituent elements and has an average particle diameter of 1 μm.
The hollow semiconductor package according to claim 4, wherein the hollow package has a specific surface area of 1 m ² / g or more and a specific surface area of 1 m ² / g or more. 6. The other inorganic filler contains spherical silica having an average particle size of 1 μm or more and 50 μm or less, and the spherical silica occupies 50% by weight or more of the other inorganic filler. The semiconductor hollow package according to 4 or 5. 7. The semiconductor hollow package according to claim 6, wherein the spherical silica has a sphericity of 0.75 or more determined by the following formula (C). Sphericity = Projected area of particle / Area of circle having the same circumference as the perimeter of particle ... (C) 8. The curing accelerator has a general formula of Ar—NH—CO—.
8. A urea derivative represented by NR ₂ (Ar is a substituted or unsubstituted aryl group, and R is a substituted or unsubstituted alkyl group which may be the same or different) and is a urea derivative. The semiconductor hollow package according to 1. 9. The lid is obtained by forming a radio wave absorbing material on a metal part previously inserted in a mold by injection molding, transfer molding or compression molding. The semiconductor hollow package according to any one of 1 to 8.