CN103871878A - Method for forming thick-field oxygen below IGBT tube grid - Google Patents

Method for forming thick-field oxygen below IGBT tube grid Download PDF

Info

Publication number
CN103871878A
CN103871878A CN201210530437.7A CN201210530437A CN103871878A CN 103871878 A CN103871878 A CN 103871878A CN 201210530437 A CN201210530437 A CN 201210530437A CN 103871878 A CN103871878 A CN 103871878A
Authority
CN
China
Prior art keywords
finished
igbt
oxygen
semi
igbt pipe
Prior art date
Application number
CN201210530437.7A
Other languages
Chinese (zh)
Other versions
CN103871878B (en
Inventor
张枫
陈建国
文燕
Original Assignee
北大方正集团有限公司
深圳方正微电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北大方正集团有限公司, 深圳方正微电子有限公司 filed Critical 北大方正集团有限公司
Priority to CN201210530437.7A priority Critical patent/CN103871878B/en
Publication of CN103871878A publication Critical patent/CN103871878A/en
Application granted granted Critical
Publication of CN103871878B publication Critical patent/CN103871878B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28238Making the insulator with sacrificial oxide

Abstract

The invention discloses a method for forming thick-field oxygen. The method is used for forming thick-field oxygen below a grid of an IGBT (Insulated Gate Bipolar Transistor) tube semi-finished product. The method includes: inletting a first gas, which complies with a first preset condition, into a finishing stove in which an IGBT semi-finished product is placed and performing field oxidation on the IGBT tube semi-finished product and generating an oxide layer on a photoetching area of the IGBT tube semi-finished product and obtaining a first IGBT tube semi-finished product; peeling off an oxide layer of areas excluding a photoetching area of the first IGBT tube semi-finished product and forming a sacrifice oxide layer on the surface of the first IGBT tube semi-finished product, the oxide layer of which is peeled off, and obtaining a second IGBT tube semi-finished product; and peeling off a sacrifice oxide layer of the second IGBT tube semi-finished product so as to clean impurities which residue on the surface of the second IGBT tube semi-finished product and forming a grid oxide layer on the surface of the second IGBT tube semi-finished product, the sacrifice oxide layer of which is peeled off and then obtaining a third IGBT tube semi-finished product which is provided with the thick-field oxygen below the grid.

Description

A kind of method that forms thick oxygen below IGBT tube grid

Technical field

The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method that forms thick oxygen below IGBT tube grid.

Background technology

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor being made up of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspects of GTR concurrently.In the prior art, IGBT pipe is as the most conventional electronic devices and components, generally for various electronic products.In the IGBT course of work, shortening the switching time of device and reducing input power consumption is an important IGBT job always, find by research, input capacitance is to determine the IGBT key factor of switching time, therefore in the impregnable situation of operating characteristic that guarantees IGBT, pass through to reduce input capacitance, improve switching time.

But the inventor realizing in the process of technical scheme in the embodiment of the present invention, finds that prior art at least has following problem:

In the prior art, IGBT pipe only has grid oxygen below polysilicon gate, because oxide layer is too thin, causes IGBT pipe input capacitance large especially, therefore, has caused long problem IGBT pipe switching time.

In addition, because the input capacitance of IGBT pipe is large especially, also cause the input power consumption of IGBT pipe excessive, be unfavorable for the raising of IGBT pipe operating efficiency.

Summary of the invention

The embodiment of the present application is by providing a kind of method that forms thick oxygen below IGBT tube grid, solve in prior art, the oxide layer of IGBT pipe polysilicon gate below is too thin, cause the excessive technical problem of input capacitance of IGBT pipe, thereby can effectively shorten the switching time of IGBT pipe and reduce the input power of IGBT pipe.

The embodiment of the present application provides a kind of method that forms thick oxygen below IGBT tube grid, and the method comprises:

There is an IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;

A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;

The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.

Preferably, have before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described to storing, described method also comprises:

There is the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer;

Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.

Preferably, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:

At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.

Preferably, after described acquisition the 6th IGBT pipe semi-finished product, described method also comprises:

Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, there is the igbt transistor of thick oxygen described in acquisition.

Preferably, the mist that described the first gas is oxygen or oxygen and inert gas.

Preferably, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen.

Preferably, when described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; In the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.

Preferably, described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.

Preferably, described the second predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.

The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:

(1), in the embodiment of the present application, owing to having adopted the method that forms thick oxygen below IGBT tube grid, thereby increase the thickness of oxide layer, so efficiently solve the excessive problem of IGBT pipe input capacitance causing because oxide layer is too thin in prior art, and then realized reduction IGBT pipe input capacitance, shorten the IGBT pipe technique effect of switching time.

(2), in the embodiment of the present application, because the oxidated layer thickness of IGBT tube grid below increases, efficiently solve the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore also there is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.

Accompanying drawing explanation

Fig. 1 is the flow chart of a kind of method that forms thick oxygen below IGBT pipe semi-finished product grid of the embodiment of the present application.

Embodiment

The embodiment of the present application is by providing a kind of method that forms thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid, solve in prior art, because the oxide layer of IGBT pipe polysilicon gate below is too thin, cause the excessive technical problem of input capacitance of IGBT pipe, thereby there is the switching time that can effectively shorten IGBT pipe and the technique effect that reduces the input power of IGBT pipe.

The general thought of the technical scheme of the embodiment of the present application is as follows:

First, there is described IGBT to manage to storing and in half-finished finishing stove, pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;

Then, a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;

Finally, the half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen

By adopting the technical scheme in the embodiment of the present application, this method is applied in the process of manufacture IGBT pipe, only need on basis in the prior art, below the grid of IGBT pipe, form thick oxygen, just can effectively solve in prior art and cause the excessive technical problem of IGBT pipe input capacitance because grid oxic horizon is too thin, have and shorten the IGBT pipe technique effect of switching time.

In order better to understand technique scheme, below in conjunction with Figure of description and concrete execution mode, technique scheme is described in detail.

As shown in Figure 1, step 101, that is: have described IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product.

In specific implementation process, described IGBT pipe semi-finished product are carried out to oxidation and manage half-finished photoetching district for described IGBT and carry out, be specially the first gas that meets the first predetermined condition described in passing into described photoetching district.

Particularly, the first gas is the mist of oxygen or oxygen and inert gas, and described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.

Particularly, in the time that described the first gas is oxygen, its volume flow unit can be 10 Liter Per Minutes, and passing into temperature is 890 ℃ to 910 ℃, and the time of passing into is 4 to 6 minutes, and described IGBT pipe semi-finished product are carried out to field oxidation.

In the time that described the first gas is the mist of oxygen and inert gas, the flux unit of oxygen can be 10 Liter Per Minutes, the volume flow unit of inert gas can be 10 Liter Per Minutes, the time of passing into is 890 ℃ to 910 ℃, the time of passing into is 4 to 6 minutes, wherein, described inert gas uses helium or argon gas conventionally.

In specific embodiment, have to storing before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described, described method also should comprise: have the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer; Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.

Particularly, N-type substrate base is to be made up of main siliceous material, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen, and in concrete implementation process, different mists has different ratio of gas mixture conditions, is specially: in the time that described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; And in the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.

And more specifically, the first oxide layer can be specially the oxide layer with double-layer structure, be specially is the silicon dioxide oxide layer that one deck oxygen and pasc reaction generate on N-type substrate base, and in silicon dioxide oxide layer, also has the silicon nitride oxide layer that nitrogen and pasc reaction generate.

In specific implementation process, described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT and manage half-finished step and be generally, first on the first oxide layer, stamp one deck photoresist, then carry out photoetching and etching in the region that need to generate thick field oxygen.

Through step 101, manage half-finished photoetching district at described IGBT and generate field oxide, obtain after IGBT pipe semi-finished product, just enter step 102, that is: a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product.

In specific implementation process, a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, be and will form the oxide layer in other region beyond field oxide region, the photoresist that need to stamp while comprising generation field oxide and silicon dioxide oxide layer and silicon nitride oxide layer are all peeled off, only retain field oxide, in actual implementation process, IGBT pipe field oxide now shows still to exist some impurity, therefore need to take certain measure that impurity is removed, so just had in a described IGBT pipe surface of semi-finished of peeling off after oxide layer and formed sacrificial oxide layer, obtain the 2nd IGBT pipe semi-finished product manufacturing process.

Through step 102, form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain after the 2nd IGBT pipe semi-finished product, described method just enters step 103, peel off by the half-finished described sacrificial oxide layer of described the 2nd IGBT pipe, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.

In specific implementation process, form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtaining the 3rd IGBT below grid with thick oxygen manages half-finished manufacture craft and is: still need to pass into a certain amount of oxidizing gas to manufacturing in the finishing stove of IGBT pipe, described the 2nd IGBT pipe surface of semi-finished is oxidized, and a certain amount of oxidizing gas passing into can be nitrogen, the mist of oxygen and hydrogen, or the mist of nitrogen and oxygen, be generally the mist of oxygen or oxygen and inert gas, and the gate oxide forming on surface is also mainly silicon dioxide oxide layer.

In concrete implementation process, completing of step 103 is not completing of whole making IGBT pipe manufacture craft, and only for form the completing of manufacture craft of thick oxygen below IGBT tube grid, obtain IGBT pipe, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:

At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.In specific implementation process, described the 3rd IGBT is managed to region beyond thick the oxygen overlay area of having of half-finished surface and carry out photoetching and etching and remain that polysilicon the 3rd IGBT pipe in surface precipitation doping is half-finished shows to stamp one deck photoresist, photoetching and etching are being carried out in the region beyond thick oxygen overlay area.

Want to obtain complete IGBT pipe, after described acquisition the 6th IGBT pipe semi-finished product, described method also should comprise:

Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, so far, just can obtain the complete igbt transistor with thick oxygen.

The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:

(1), in the embodiment of the present application, owing to having adopted the method that forms thick oxygen below IGBT tube grid, thereby increase the thickness of oxide layer, so efficiently solve the excessive problem of IGBT pipe input capacitance causing because oxide layer is too thin in prior art, and then realized reduction IGBT pipe input capacitance, shorten the IGBT pipe technique effect of switching time.

(2), in the embodiment of the present application, because the oxidated layer thickness of IGBT tube grid below increases, efficiently solve the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore also there is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.

(3), in the embodiment of the present application, just on prior art basis, increase the series of steps that forms thick oxygen below the grid of IGBT pipe, and its manufacture craft is all the process conditions that current making can be satisfied, implement and product volume production so convenient.

In this specification, the present invention is described with reference to its specific embodiment, and still, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.

Claims (9)

1. form a method for thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid, it is characterized in that, described method comprises:
There is described IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;
A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;
The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
2. the method for claim 1, is characterized in that, has before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described to storing, and described method also comprises:
There is the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer;
Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
3. method as claimed in claim 2, is characterized in that, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.
4. method as claimed in claim 3, is characterized in that, after described acquisition the 6th IGBT pipe semi-finished product, described method also comprises:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, there is the igbt transistor of thick oxygen described in acquisition.
5. the method for claim 1, is characterized in that, described the first gas is the mist of oxygen or oxygen and inert gas.
6. method as claimed in claim 2, is characterized in that, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen.
7. method as claimed in claim 6, is characterized in that, when described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; In the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.
8. the method for claim 1, is characterized in that, described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
9. method as claimed in claim 2, is characterized in that, described the second predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
CN201210530437.7A 2012-12-10 2012-12-10 A kind of method that forms thick oxygen below IGBT tube grid CN103871878B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210530437.7A CN103871878B (en) 2012-12-10 2012-12-10 A kind of method that forms thick oxygen below IGBT tube grid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210530437.7A CN103871878B (en) 2012-12-10 2012-12-10 A kind of method that forms thick oxygen below IGBT tube grid

Publications (2)

Publication Number Publication Date
CN103871878A true CN103871878A (en) 2014-06-18
CN103871878B CN103871878B (en) 2016-05-04

Family

ID=50910293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210530437.7A CN103871878B (en) 2012-12-10 2012-12-10 A kind of method that forms thick oxygen below IGBT tube grid

Country Status (1)

Country Link
CN (1) CN103871878B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851888A (en) * 1986-09-24 1989-07-25 Fuji Electric Co., Ltd. Conductivity modulation type vertical MOS-FET
CN1649169A (en) * 2004-01-29 2005-08-03 三菱电机株式会社 Semiconductor device
CN101221986A (en) * 2008-01-29 2008-07-16 电子科技大学 Thin film SOI thick grid oxygen power device with grid field plate
CN101308871A (en) * 2007-05-17 2008-11-19 富士电机电子技术株式会社 Insulated gate semiconductor device and manufacturing mnethod thereof
CN102254940A (en) * 2011-08-06 2011-11-23 深圳市稳先微电子有限公司 Low-capacitance transistor power device and manufacturing method thereof
US20120217577A1 (en) * 2011-02-25 2012-08-30 Renesas Electronics Corporation Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851888A (en) * 1986-09-24 1989-07-25 Fuji Electric Co., Ltd. Conductivity modulation type vertical MOS-FET
CN1649169A (en) * 2004-01-29 2005-08-03 三菱电机株式会社 Semiconductor device
CN101308871A (en) * 2007-05-17 2008-11-19 富士电机电子技术株式会社 Insulated gate semiconductor device and manufacturing mnethod thereof
CN101221986A (en) * 2008-01-29 2008-07-16 电子科技大学 Thin film SOI thick grid oxygen power device with grid field plate
US20120217577A1 (en) * 2011-02-25 2012-08-30 Renesas Electronics Corporation Semiconductor device
CN102254940A (en) * 2011-08-06 2011-11-23 深圳市稳先微电子有限公司 Low-capacitance transistor power device and manufacturing method thereof

Also Published As

Publication number Publication date
CN103871878B (en) 2016-05-04

Similar Documents

Publication Publication Date Title
CN104124273B (en) There is MOS device of strained buffer layer and forming method thereof
TWI570815B (en) Semiconductor device and method for manufacturing the same
TWI514475B (en) Methods for forming a hydrogen free silicon containing dielectric film
KR101345378B1 (en) Fabrication method of ZnO family Thin film transistor
CN102683424B (en) Display device and array substrate as well as thin film transistor and manufacturing method thereof
CN102822979B (en) Semiconductor device
CN106558592B (en) The preparation method of array substrate, display device and array substrate
CN101253633B (en) Method for producing silicon carbide semiconductor device
CN103745978B (en) Display device, array base palte and preparation method thereof
CN1333454C (en) A silicon-on-insulator device with strain film and method for forming strain film
CN104185898A (en) Insulating film, method for manufacturing semiconductor device, and semiconductor device
CN103700706B (en) Preparation method of thin film transistor and array substrate
CN103745955B (en) Display device, array substrate and manufacturing method of array substrate
CN103715228B (en) Array base palte and manufacture method, display unit
CN103187417A (en) Semiconductor device and method of forming the same
CN103730346B (en) A kind of thin film transistor (TFT) and preparation method thereof, array base palte, display device
CN101393937B (en) Pin diode
CN103985637A (en) Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device
JP4634923B2 (en) Insulating film manufacturing method, transistor manufacturing method, and electronic device manufacturing method
TW201103142A (en) Organic light emitting display device and fabricating method thereof
JP6004308B2 (en) Thin film device
TWI538220B (en) Thin film transistor and fabrication method thereof
CN103489827B (en) A kind of thin-film transistor drives backboard and preparation method thereof, display floater
CN101499422B (en) Production method for inner transparent collecting electrode IGBT with polysilicon as service life control layer
CN101764065B (en) Preparing method of p-type stannous oxide ditch film transistors

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160504

Termination date: 20171210

CF01 Termination of patent right due to non-payment of annual fee