CN103871878A - Method for forming thick-field oxygen below IGBT tube grid - Google Patents
Method for forming thick-field oxygen below IGBT tube grid Download PDFInfo
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- CN103871878A CN103871878A CN201210530437.7A CN201210530437A CN103871878A CN 103871878 A CN103871878 A CN 103871878A CN 201210530437 A CN201210530437 A CN 201210530437A CN 103871878 A CN103871878 A CN 103871878A
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000001301 oxygen Substances 0.000 title claims abstract description 68
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000011265 semifinished product Substances 0.000 claims abstract description 54
- 239000007789 gas Substances 0.000 claims abstract description 36
- 238000001259 photo etching Methods 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 239000003595 mist Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000009467 reduction Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a method for forming thick-field oxygen. The method is used for forming thick-field oxygen below a grid of an IGBT (Insulated Gate Bipolar Transistor) tube semi-finished product. The method includes: inletting a first gas, which complies with a first preset condition, into a finishing stove in which an IGBT semi-finished product is placed and performing field oxidation on the IGBT tube semi-finished product and generating an oxide layer on a photoetching area of the IGBT tube semi-finished product and obtaining a first IGBT tube semi-finished product; peeling off an oxide layer of areas excluding a photoetching area of the first IGBT tube semi-finished product and forming a sacrifice oxide layer on the surface of the first IGBT tube semi-finished product, the oxide layer of which is peeled off, and obtaining a second IGBT tube semi-finished product; and peeling off a sacrifice oxide layer of the second IGBT tube semi-finished product so as to clean impurities which residue on the surface of the second IGBT tube semi-finished product and forming a grid oxide layer on the surface of the second IGBT tube semi-finished product, the sacrifice oxide layer of which is peeled off and then obtaining a third IGBT tube semi-finished product which is provided with the thick-field oxygen below the grid.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method that forms thick oxygen below IGBT tube grid.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor being made up of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspects of GTR concurrently.In the prior art, IGBT pipe is as the most conventional electronic devices and components, generally for various electronic products.In the IGBT course of work, shortening the switching time of device and reducing input power consumption is an important IGBT job always, find by research, input capacitance is to determine the IGBT key factor of switching time, therefore in the impregnable situation of operating characteristic that guarantees IGBT, pass through to reduce input capacitance, improve switching time.
But the inventor realizing in the process of technical scheme in the embodiment of the present invention, finds that prior art at least has following problem:
In the prior art, IGBT pipe only has grid oxygen below polysilicon gate, because oxide layer is too thin, causes IGBT pipe input capacitance large especially, therefore, has caused long problem IGBT pipe switching time.
In addition, because the input capacitance of IGBT pipe is large especially, also cause the input power consumption of IGBT pipe excessive, be unfavorable for the raising of IGBT pipe operating efficiency.
Summary of the invention
The embodiment of the present application is by providing a kind of method that forms thick oxygen below IGBT tube grid, solve in prior art, the oxide layer of IGBT pipe polysilicon gate below is too thin, cause the excessive technical problem of input capacitance of IGBT pipe, thereby can effectively shorten the switching time of IGBT pipe and reduce the input power of IGBT pipe.
The embodiment of the present application provides a kind of method that forms thick oxygen below IGBT tube grid, and the method comprises:
There is an IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;
A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;
The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
Preferably, have before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described to storing, described method also comprises:
There is the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer;
Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
Preferably, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.
Preferably, after described acquisition the 6th IGBT pipe semi-finished product, described method also comprises:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, there is the igbt transistor of thick oxygen described in acquisition.
Preferably, the mist that described the first gas is oxygen or oxygen and inert gas.
Preferably, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen.
Preferably, when described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; In the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.
Preferably, described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
Preferably, described the second predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1), in the embodiment of the present application, owing to having adopted the method that forms thick oxygen below IGBT tube grid, thereby increase the thickness of oxide layer, so efficiently solve the excessive problem of IGBT pipe input capacitance causing because oxide layer is too thin in prior art, and then realized reduction IGBT pipe input capacitance, shorten the IGBT pipe technique effect of switching time.
(2), in the embodiment of the present application, because the oxidated layer thickness of IGBT tube grid below increases, efficiently solve the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore also there is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.
Accompanying drawing explanation
Fig. 1 is the flow chart of a kind of method that forms thick oxygen below IGBT pipe semi-finished product grid of the embodiment of the present application.
Embodiment
The embodiment of the present application is by providing a kind of method that forms thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid, solve in prior art, because the oxide layer of IGBT pipe polysilicon gate below is too thin, cause the excessive technical problem of input capacitance of IGBT pipe, thereby there is the switching time that can effectively shorten IGBT pipe and the technique effect that reduces the input power of IGBT pipe.
The general thought of the technical scheme of the embodiment of the present application is as follows:
First, there is described IGBT to manage to storing and in half-finished finishing stove, pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;
Then, a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;
Finally, the half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen
By adopting the technical scheme in the embodiment of the present application, this method is applied in the process of manufacture IGBT pipe, only need on basis in the prior art, below the grid of IGBT pipe, form thick oxygen, just can effectively solve in prior art and cause the excessive technical problem of IGBT pipe input capacitance because grid oxic horizon is too thin, have and shorten the IGBT pipe technique effect of switching time.
In order better to understand technique scheme, below in conjunction with Figure of description and concrete execution mode, technique scheme is described in detail.
As shown in Figure 1, step 101, that is: have described IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product.
In specific implementation process, described IGBT pipe semi-finished product are carried out to oxidation and manage half-finished photoetching district for described IGBT and carry out, be specially the first gas that meets the first predetermined condition described in passing into described photoetching district.
Particularly, the first gas is the mist of oxygen or oxygen and inert gas, and described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
Particularly, in the time that described the first gas is oxygen, its volume flow unit can be 10 Liter Per Minutes, and passing into temperature is 890 ℃ to 910 ℃, and the time of passing into is 4 to 6 minutes, and described IGBT pipe semi-finished product are carried out to field oxidation.
In the time that described the first gas is the mist of oxygen and inert gas, the flux unit of oxygen can be 10 Liter Per Minutes, the volume flow unit of inert gas can be 10 Liter Per Minutes, the time of passing into is 890 ℃ to 910 ℃, the time of passing into is 4 to 6 minutes, wherein, described inert gas uses helium or argon gas conventionally.
In specific embodiment, have to storing before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described, described method also should comprise: have the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer; Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
Particularly, N-type substrate base is to be made up of main siliceous material, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen, and in concrete implementation process, different mists has different ratio of gas mixture conditions, is specially: in the time that described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; And in the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.
And more specifically, the first oxide layer can be specially the oxide layer with double-layer structure, be specially is the silicon dioxide oxide layer that one deck oxygen and pasc reaction generate on N-type substrate base, and in silicon dioxide oxide layer, also has the silicon nitride oxide layer that nitrogen and pasc reaction generate.
In specific implementation process, described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT and manage half-finished step and be generally, first on the first oxide layer, stamp one deck photoresist, then carry out photoetching and etching in the region that need to generate thick field oxygen.
Through step 101, manage half-finished photoetching district at described IGBT and generate field oxide, obtain after IGBT pipe semi-finished product, just enter step 102, that is: a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product.
In specific implementation process, a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, be and will form the oxide layer in other region beyond field oxide region, the photoresist that need to stamp while comprising generation field oxide and silicon dioxide oxide layer and silicon nitride oxide layer are all peeled off, only retain field oxide, in actual implementation process, IGBT pipe field oxide now shows still to exist some impurity, therefore need to take certain measure that impurity is removed, so just had in a described IGBT pipe surface of semi-finished of peeling off after oxide layer and formed sacrificial oxide layer, obtain the 2nd IGBT pipe semi-finished product manufacturing process.
Through step 102, form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain after the 2nd IGBT pipe semi-finished product, described method just enters step 103, peel off by the half-finished described sacrificial oxide layer of described the 2nd IGBT pipe, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
In specific implementation process, form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtaining the 3rd IGBT below grid with thick oxygen manages half-finished manufacture craft and is: still need to pass into a certain amount of oxidizing gas to manufacturing in the finishing stove of IGBT pipe, described the 2nd IGBT pipe surface of semi-finished is oxidized, and a certain amount of oxidizing gas passing into can be nitrogen, the mist of oxygen and hydrogen, or the mist of nitrogen and oxygen, be generally the mist of oxygen or oxygen and inert gas, and the gate oxide forming on surface is also mainly silicon dioxide oxide layer.
In concrete implementation process, completing of step 103 is not completing of whole making IGBT pipe manufacture craft, and only for form the completing of manufacture craft of thick oxygen below IGBT tube grid, obtain IGBT pipe, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.In specific implementation process, described the 3rd IGBT is managed to region beyond thick the oxygen overlay area of having of half-finished surface and carry out photoetching and etching and remain that polysilicon the 3rd IGBT pipe in surface precipitation doping is half-finished shows to stamp one deck photoresist, photoetching and etching are being carried out in the region beyond thick oxygen overlay area.
Want to obtain complete IGBT pipe, after described acquisition the 6th IGBT pipe semi-finished product, described method also should comprise:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, so far, just can obtain the complete igbt transistor with thick oxygen.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1), in the embodiment of the present application, owing to having adopted the method that forms thick oxygen below IGBT tube grid, thereby increase the thickness of oxide layer, so efficiently solve the excessive problem of IGBT pipe input capacitance causing because oxide layer is too thin in prior art, and then realized reduction IGBT pipe input capacitance, shorten the IGBT pipe technique effect of switching time.
(2), in the embodiment of the present application, because the oxidated layer thickness of IGBT tube grid below increases, efficiently solve the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore also there is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.
(3), in the embodiment of the present application, just on prior art basis, increase the series of steps that forms thick oxygen below the grid of IGBT pipe, and its manufacture craft is all the process conditions that current making can be satisfied, implement and product volume production so convenient.
In this specification, the present invention is described with reference to its specific embodiment, and still, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (9)
1. form a method for thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid, it is characterized in that, described method comprises:
There is described IGBT to manage in half-finished finishing stove to storing and pass into the first gas that meets the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at described IGBT and generate field oxide, obtain IGBT pipe semi-finished product;
A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product;
The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, for removing the impurity that remains in described the 2nd IGBT pipe surface of semi-finished, and form gate oxide in described the 2nd IGBT pipe surface of semi-finished of peeling off after described sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
2. the method for claim 1, is characterized in that, has before described IGBT passes into the first gas that meets the first predetermined condition in managing half-finished finishing stove described to storing, and described method also comprises:
There is the 4th IGBT with N-type substrate base to manage to storing and in half-finished finishing stove, pass into the second gas that meets the second predetermined condition, described IGBT pipe half-finished described N-type substrate base surface with N-type substrate base is oxidized, obtains the 5th IGBT pipe semi-finished product with the first oxide layer;
Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
3. method as claimed in claim 2, is characterized in that, have the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and described the 3rd IGBT of precipitation doped polycrystalline silicon is managed to region in addition, thick oxygen overlay area of having of half-finished surface and carry out photoetching and etching, obtain the 6th IGBT pipe semi-finished product.
4. method as claimed in claim 3, is characterized in that, after described acquisition the 6th IGBT pipe semi-finished product, described method also comprises:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and photoetching is carried out in described the 6th IGBT pipe semi-finished product source region, there is the igbt transistor of thick oxygen described in acquisition.
5. the method for claim 1, is characterized in that, described the first gas is the mist of oxygen or oxygen and inert gas.
6. method as claimed in claim 2, is characterized in that, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or the mist of nitrogen and oxygen.
7. method as claimed in claim 6, is characterized in that, when described the second gas is the mist of nitrogen, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; In the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.
8. the method for claim 1, is characterized in that, described the first predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
9. method as claimed in claim 2, is characterized in that, described the second predetermined condition is: passing into temperature is 900 ℃ ± 10 ℃.
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| CN101221986A (en) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | Thin film SOI thick grid oxygen power device with grid field plate |
| US20120217577A1 (en) * | 2011-02-25 | 2012-08-30 | Renesas Electronics Corporation | Semiconductor device |
| CN102254940A (en) * | 2011-08-06 | 2011-11-23 | 深圳市稳先微电子有限公司 | Low-capacitance transistor power device and manufacturing method thereof |
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