CN103871878B - A kind of method that forms thick oxygen below IGBT tube grid - Google Patents
A kind of method that forms thick oxygen below IGBT tube grid Download PDFInfo
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- CN103871878B CN103871878B CN201210530437.7A CN201210530437A CN103871878B CN 103871878 B CN103871878 B CN 103871878B CN 201210530437 A CN201210530437 A CN 201210530437A CN 103871878 B CN103871878 B CN 103871878B
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 239000001301 oxygen Substances 0.000 title claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000011265 semifinished product Substances 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 38
- 238000001259 photo etching Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000003595 mist Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 101100379079 Emericella variicolor andA gene Proteins 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- KXLUWEYBZBGJRZ-POEOZHCLSA-N Canin Chemical compound O([C@H]12)[C@]1([C@](CC[C@H]1C(=C)C(=O)O[C@@H]11)(C)O)[C@@H]1[C@@]1(C)[C@@H]2O1 KXLUWEYBZBGJRZ-POEOZHCLSA-N 0.000 description 1
- GPFVKTQSZOQXLY-UHFFFAOYSA-N Chrysartemin A Natural products CC1(O)C2OC2C34OC3(C)CC5C(CC14)OC(=O)C5=C GPFVKTQSZOQXLY-UHFFFAOYSA-N 0.000 description 1
- 241000630665 Hada Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of method that forms thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid, the method comprises: manage and in half-finished finishing stove, pass into the first gas that meets the first predetermined condition to being placed with IGBT, IGBT pipe semi-finished product are carried out to field oxidation, manage half-finished photoetching district at IGBT and generate field oxide, obtain IGBT pipe semi-finished product; The one IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, and form sacrificial oxide layer in an IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain the 2nd IGBT pipe semi-finished product; The 2nd IGBT is managed to half-finished sacrificial oxide layer to be peeled off, for removing the impurity that remains in the 2nd IGBT pipe surface of semi-finished, and form gate oxide in the 2nd IGBT pipe surface of semi-finished of peeling off after sacrificial oxide layer, obtain the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of thick field that forms below IGBT tube gridThe method of oxygen.
Background technology
IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is (two by BJTPolar form triode) and the compound full-control type voltage driven type power half of MOS (insulating gate type field effect tube) compositionConductor device, has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspects of GTR concurrently.In the prior art, IGBT pipe is as the most conventional electronic devices and components, generally for various electronic productsIn. In the IGBT course of work, shorten device switch time and reduce input power consumption be always one importantIGBT work, find by research, input capacitance is the decision IGBT key factor of switch time,Therefore in the impregnable situation of operating characteristic that ensures IGBT, pass through to reduce input capacitance, improve switchTime.
But the inventor, realizing in the process of technical scheme in the embodiment of the present invention, finds prior artAt least there is following problem:
In the prior art, IGBT pipe only has grid oxygen below polysilicon gate, because oxide layer is too thin,Cause IGBT pipe input capacitance large especially, therefore, caused long problem IGBT pipe switch time.
In addition, because the input capacitance of IGBT pipe is large especially, also caused the input power consumption mistake of IGBT pipeBe unfavorable for the raising of IGBT pipe operating efficiency greatly.
Summary of the invention
The embodiment of the present application, by a kind of method that forms thick oxygen below IGBT tube grid is provided, solvesIn prior art, the oxide layer of IGBT pipe polysilicon gate below is too thin, causes the input of IGBT pipeThe technical problem that electric capacity is excessive, thus can effectively shorten the switch time of IGBT pipe and reduce IGBT pipeInput power.
The embodiment of the present application provides a kind of method that forms thick oxygen below IGBT tube grid, the methodComprise:
There is an IGBT to manage to storing and in half-finished finishing stove, pass into the first gas that meets the first predetermined conditionBody, carries out field oxidation to described IGBT pipe semi-finished product, manages half-finished photoetching district generate at described IGBTField oxide, obtains IGBT pipe semi-finished product;
A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, andA described IGBT pipe surface of semi-finished of peeling off after oxide layer forms sacrificial oxide layer, obtains the 2nd IGBTPipe semi-finished product;
The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, described in remaining in for removingThe impurity of the 2nd IGBT pipe surface of semi-finished, and at described the 2nd IGBT peeling off after described sacrificial oxide layerPipe surface of semi-finished forms gate oxide, and the 3rd IGBT pipe half that acquisition has thick oxygen below grid becomesProduct.
Preferably, described have described IGBT to pass in managing half-finished finishing stove to meet to storing first pre-Before the first gas of fixed condition, described method also comprises:
There is the 4th IGBT with N-type substrate base to manage in half-finished finishing stove to storing and pass into symbolClose the second gas of the second predetermined condition, the described IGBT with N-type substrate base is managed to half-finished instituteState N-type substrate base surface and be oxidized, obtain the 5th IGBT pipe semi-finished product with the first oxide layer;
Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
Preferably, there are the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after,Described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and to precipitation DOPOS doped polycrystalline siliconDescribed the 3rd IGBT region of managing beyond thick the oxygen overlay area of having of half-finished surface carry out photoetchingAnd etching, obtain the 6th IGBT pipe semi-finished product.
Preferably, after described acquisition the 6th IGBT pipe semi-finished product, described method also comprises:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and to describedPhotoetching is carried out in six IGBT pipe semi-finished product source regions, has the igbt transistor of thick oxygen described in acquisition.
Preferably, the mist that described the first gas is oxygen or oxygen and inert gas.
Preferably, described the second gas is: the mist of nitrogen, oxygen and hydrogen, or nitrogen and oxygenMist.
Preferably, when described the second gas is the mist of nitrogen, oxygen and hydrogen, nitrogen, oxygen,The gas flow ratio of hydrogen is 6: 4: 6; In the time that described the second gas is the mist of nitrogen and oxygen,The gas flow ratio of nitrogen and oxygen is 6: 4.
Preferably, described the first predetermined condition is: passing into temperature is 900 DEG C ± 10 DEG C.
Preferably, described the second predetermined condition is: passing into temperature is 900 DEG C ± 10 DEG C.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or excellentPoint:
(1), in the embodiment of the present application, below IGBT tube grid, form thick oxygen owing to having adoptedMethod, thereby increased the thickness of oxide layer, so efficiently solve in prior art because oxide layer is too thinThe excessive problem of IGBT pipe input capacitance causing, and then realized reduction IGBT pipe input capacitance, contractingShort IGBT manages the technique effect of switch time.
(2), because the oxidated layer thickness of IGBT tube grid below increases, have, in the embodiment of the present application,Effect has solved the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore alsoThere is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.
Brief description of the drawings
Fig. 1 is a kind of method that forms thick oxygen below IGBT pipe semi-finished product grid of the embodiment of the present applicationFlow chart.
Detailed description of the invention
The embodiment of the present application is by a kind of method that forms thick oxygen is provided, at IGBT pipe semi-finished product gridUtmost point below forms thick oxygen, has solved in prior art, due to the oxygen of IGBT pipe polysilicon gate belowChange layer too thin, cause the excessive technical problem of input capacitance of IGBT pipe, can effectively shorten thereby haveThe technique effect of the input power of the switch time of IGBT pipe and reduction IGBT pipe.
The general thought of the technical scheme of the embodiment of the present application is as follows:
First, there is described IGBT to manage to pass in half-finished finishing stove to storing and meet the first predetermined conditionThe first gas, carries out field oxidation to described IGBT pipe semi-finished product, manages half-finished photoetching at described IGBTDistrict generates field oxide, obtains IGBT pipe semi-finished product;
Then, a described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district,And form sacrificial oxide layer in a described IGBT pipe surface of semi-finished of peeling off after oxide layer, obtain secondIGBT pipe semi-finished product;
Finally, the half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, residual for removingAt the impurity of described the 2nd IGBT pipe surface of semi-finished, and peeling off described after described sacrificial oxide layerTwo IGBT pipe surface of semi-finished form gate oxide, obtain the 3rd IGBT below grid with thick oxygenPipe semi-finished product
By adopting the technical scheme in the embodiment of the present application, this method is applied in the mistake of manufacturing IGBT pipeCheng Zhong, only needs, on basis in the prior art, to form thick oxygen below the grid of IGBT pipe, just canIn prior art, cause the excessive skill of IGBT pipe input capacitance because grid oxic horizon is too thin effectively to solveArt problem, has and shortens the IGBT pipe technique effect of switch time.
In order better to understand technique scheme, below in conjunction with Figure of description and concrete enforcement sideFormula is described in detail technique scheme.
As shown in Figure 1, step 101, that is: have described IGBT to manage in half-finished finishing stove to storing logicalEnter to meet the first gas of the first predetermined condition, described IGBT pipe semi-finished product are carried out to field oxidation, describedIGBT manages half-finished photoetching district and generates field oxide, obtains IGBT pipe semi-finished product.
In specific implementation process, it is for described IGBT that described IGBT pipe semi-finished product are carried out to field oxidationManage that half-finished photoetching district carries out, be specially described in passing into described photoetching district and meet the first predetermined conditionThe first gas.
Particularly, the first gas is the mist of oxygen or oxygen and inert gas, described the first predetermined barPart is: passing into temperature is 900 DEG C ± 10 DEG C.
Particularly, in the time that described the first gas is oxygen, its volume flow unit can be 10 Liter Per Minutes,Passing into temperature is 890 DEG C to 910 DEG C, and the time of passing into is 4 to 6 minutes, to described IGBT pipe semi-finished productCarry out field oxidation.
In the time that described the first gas is the mist of oxygen and inert gas, the flux unit of oxygen can be10 Liter Per Minutes, the volume flow unit of inert gas can be 10 Liter Per Minutes, the time of passing into is 890 DEG CTo 910 DEG C, the time of passing into is 4 to 6 minutes, and wherein, described inert gas uses helium or argon conventionallyGas.
In specific embodiment, there is described IGBT to pass in managing half-finished finishing stove to storing describedBefore meeting the first gas of the first predetermined condition, described method also should comprise: have and have to storingThe 4th IGBT of N-type substrate base manages in half-finished finishing stove and passes into and meet second of the second predetermined conditionGas, enters described IGBT pipe half-finished described N-type substrate base surface with N-type substrate baseRow oxidation, obtains the 5th IGBT pipe semi-finished product with the first oxide layer; Described the first oxide layer is carried outActive area photoetching and etching, obtain described IGBT pipe semi-finished product.
Particularly, N-type substrate base is to be made up of main siliceous material, and described the second gas is: nitrogen,The mist of oxygen and hydrogen, or the mist of nitrogen and oxygen, and in concrete implementation process,Different mists has different ratio of gas mixture conditions, is specially: when described the second gas is nitrogenWhen the mist of gas, oxygen and hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6;And in the time that described the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is6∶4。
And more specifically, the first oxide layer can be specially the oxide layer with double-layer structure, be specially at NOn type substrate base is the silica oxide layer that one deck oxygen and pasc reaction generate, and at titanium dioxide silicaOn change layer, also there is the silicon nitride oxide layer that nitrogen and pasc reaction generate.
In specific implementation process, described the first oxide layer is carried out to active area photoetching and etching, described in acquisitionIGBT manages half-finished step and is generally, and first on the first oxide layer, stamps one deck photoresist, thenCarry out photoetching and etching in the region that need to generate thick oxygen.
Through step 101, manage half-finished photoetching district at described IGBT and generate field oxide, obtain firstAfter IGBT pipe semi-finished product, just enter step 102, that is: a described IGBT is managed to half-finished photoetching districtThe oxide layer stripping in other region in addition, and at described IGBT pipe semi-finished product of peeling off after oxide layerSurface forms sacrificial oxide layer, obtains the 2nd IGBT pipe semi-finished product.
In specific implementation process, a described IGBT is managed to other region beyond half-finished photoetching districtOxide layer stripping, be forming the oxide layer in other region beyond field oxide region, comprise generationThe photoresist that need to stamp when field oxide and silica oxide layer and silicon nitride oxide layer are all peeled off,Only retain field oxide, in actual implementation process, IGBT pipe field oxide now shows still to depositAt some impurity, therefore need to take certain measure that impurity is removed, peeling off oxidation so just hadA described IGBT pipe surface of semi-finished after layer forms sacrificial oxide layer, obtains the 2nd IGBT pipe half and becomesProduct manufacturing process.
Through step 102, form sacrifice in a described IGBT pipe surface of semi-finished of peeling off after oxide layerOxide layer, obtains after the 2nd IGBT pipe semi-finished product, and described method just enters step 103, by described theThe half-finished described sacrificial oxide layer of two IGBT pipes is peeled off, and remains in described the 2nd IGBT pipe for removingThe impurity of surface of semi-finished, and at described the 2nd IGBT pipe semi-finished product table of peeling off after described sacrificial oxide layerFace forms gate oxide, obtains the 3rd IGBT pipe semi-finished product below grid with thick oxygen.
In specific implementation process, at described the 2nd IGBT pipe semi-finished product of peeling off after described sacrificial oxide layerSurface forms gate oxide, and the 3rd IGBT that acquisition has thick oxygen below grid manages half-finished makingTechnique is: still need to pass into a certain amount of oxidizing gas to manufacturing in the finishing stove of IGBT pipe, to described theTwo IGBT pipe surface of semi-finished are oxidized, and a certain amount of oxidizing gas passing into can be nitrogen, oxygenThe mist of gas and hydrogen, or the mist of nitrogen and oxygen, be generally oxygen or oxygen and inertiaThe mist of gas, and the gate oxide forming on surface is also mainly silica oxide layer.
In concrete implementation process, completing of step 103 is not whole making IGBT pipe manufacture craftComplete, and only for form the completing of manufacture craft of thick oxygen below IGBT tube grid, obtainIGBT pipe, there are the 3rd IGBT pipe semi-finished product of thick oxygen below grid in described acquisition after, instituteThe method of stating also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and to precipitation DOPOS doped polycrystalline siliconDescribed the 3rd IGBT region of managing beyond thick the oxygen overlay area of having of half-finished surface carry out photoetchingAnd etching, obtain the 6th IGBT pipe semi-finished product. In specific implementation process, to described the 3rd IGBT pipeHalf-finished surface have that photoetching is carried out in region beyond thick oxygen overlay area and etching remains at tablePolysilicon the 3rd IGBT pipe of face precipitation doping is half-finished shows to stamp one deck photoresist, to thick oxygenPhotoetching and etching are carried out in region beyond overlay area.
Want to obtain complete IGBT pipe, after described acquisition the 6th IGBT pipe semi-finished product, described sideMethod also should comprise:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and to describedPhotoetching is carried out in six IGBT pipe semi-finished product source regions, so far, just can obtain the complete IGBT with thick oxygenTransistor.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or excellentPoint:
(1), in the embodiment of the present application, below IGBT tube grid, form thick oxygen owing to having adoptedMethod, thereby increased the thickness of oxide layer, so efficiently solve in prior art because oxide layer is too thinThe excessive problem of IGBT pipe input capacitance causing, and then realized reduction IGBT pipe input capacitance, contractingShort IGBT manages the technique effect of switch time.
(2), because the oxidated layer thickness of IGBT tube grid below increases, have, in the embodiment of the present application,Effect has solved the too thin excessive problem of IGBT pipe input capacitance causing of oxide layer in prior art, therefore alsoThere is the IGBT of reduction pipe input power, improve on the whole the technique effect of IGBT pipe operating efficiency.
(3), in the embodiment of the present application, the grid at IGBT pipe just on prior art basis, have been increasedUtmost point below forms the series of steps of thick oxygen, and its manufacture craft is all the work that current making can be satisfiedSkill condition, implements and product volume production so convenient.
In this description, the present invention is described with reference to its specific embodiment, still, and this areaTechnical staff can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention. ThisSample, if of the present invention these amendment and modification belong to the claims in the present invention and equivalent technologies thereof scope itIn, the present invention be also intended to comprise these change and modification interior.
Claims (9)
1. form a method for thick oxygen, for form thick oxygen below IGBT pipe semi-finished product grid,It is characterized in that, described method comprises:
There is described IGBT to manage to storing and in half-finished finishing stove, pass into the first gas that meets the first predetermined conditionBody, carries out field oxidation to described IGBT pipe semi-finished product, manages half-finished photoetching district generate at described IGBTField oxide, obtains IGBT pipe semi-finished product;
A described IGBT is managed to the oxide layer stripping in other region beyond half-finished photoetching district, andA described IGBT pipe surface of semi-finished of peeling off after oxide layer forms sacrificial oxide layer, obtains the 2nd IGBTPipe semi-finished product;
The half-finished described sacrificial oxide layer of described the 2nd IGBT pipe is peeled off, described in remaining in for removingThe impurity of the 2nd IGBT pipe surface of semi-finished, and at described the 2nd IGBT peeling off after described sacrificial oxide layerPipe surface of semi-finished forms gate oxide, and the 3rd IGBT pipe half that acquisition has thick oxygen below grid becomesProduct.
2. the method for claim 1, is characterized in that, has described IGBT described to storingBefore managing and passing into the first gas that meets the first predetermined condition in half-finished finishing stove, described method is also wrappedDraw together:
There is the 4th IGBT with N-type substrate base to manage in half-finished finishing stove to storing and pass into symbolClose the second gas of the second predetermined condition, the described IGBT with N-type substrate base is managed to half-finished instituteState N-type substrate base surface and be oxidized, obtain the 5th IGBT pipe semi-finished product with the first oxide layer;
Described the first oxide layer is carried out to active area photoetching and etching, obtain described IGBT pipe semi-finished product.
3. method as claimed in claim 2, is characterized in that, has below grid in described acquisitionAfter the 3rd IGBT pipe semi-finished product of thick oxygen, described method also comprises:
At the polysilicon of described the 3rd IGBT pipe surface of semi-finished precipitation doping, and to precipitation DOPOS doped polycrystalline siliconDescribed the 3rd IGBT region of managing beyond thick the oxygen overlay area of having of half-finished surface carry out photoetchingAnd etching, obtain the 6th IGBT pipe semi-finished product.
4. method as claimed in claim 3, is characterized in that, at described acquisition the 6th IGBT pipe halfAfter finished product, described method also comprises:
Described the 6th IGBT is managed to half-finished photoetching district and carry out injection and the diffusion in tagma, and to describedPhotoetching is carried out in six IGBT pipe semi-finished product source regions, has the igbt transistor of thick oxygen described in acquisition.
5. the method for claim 1, is characterized in that, described the first gas is oxygen or oxygenMist with inert gas.
6. method as claimed in claim 2, is characterized in that, described the second gas is: nitrogen, oxygenThe mist of gas and hydrogen, or the mist of nitrogen and oxygen.
7. method as claimed in claim 6, is characterized in that, described the second gas is nitrogen, oxygenDuring with the mist of hydrogen, the gas flow ratio of nitrogen, oxygen, hydrogen is 6: 4: 6; DescribedWhen the second gas is the mist of nitrogen and oxygen, the gas flow ratio of nitrogen and oxygen is 6: 4.
8. the method for claim 1, is characterized in that, described the first predetermined condition is: pass intoTemperature is 900 DEG C ± 10 DEG C.
9. method as claimed in claim 2, is characterized in that, described the second predetermined condition is: pass intoTemperature is 900 DEG C ± 10 DEG C.
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| CN201210530437.7A CN103871878B (en) | 2012-12-10 | 2012-12-10 | A kind of method that forms thick oxygen below IGBT tube grid |
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| CN201210530437.7A CN103871878B (en) | 2012-12-10 | 2012-12-10 | A kind of method that forms thick oxygen below IGBT tube grid |
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| CN103871878A CN103871878A (en) | 2014-06-18 |
| CN103871878B true CN103871878B (en) | 2016-05-04 |
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| JP2012178389A (en) * | 2011-02-25 | 2012-09-13 | Renesas Electronics Corp | Semiconductor device |
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| US4851888A (en) * | 1986-09-24 | 1989-07-25 | Fuji Electric Co., Ltd. | Conductivity modulation type vertical MOS-FET |
| CN1649169A (en) * | 2004-01-29 | 2005-08-03 | 三菱电机株式会社 | Semiconductor device |
| CN101308871A (en) * | 2007-05-17 | 2008-11-19 | 富士电机电子技术株式会社 | Insulated gate semiconductor device and manufacturing mnethod thereof |
| CN101221986A (en) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | Thin film SOI thick grid oxygen power device with grid field plate |
| CN102254940A (en) * | 2011-08-06 | 2011-11-23 | 深圳市稳先微电子有限公司 | Low-capacitance transistor power device and manufacturing method thereof |
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