CN100570838C - A kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity - Google Patents
A kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity Download PDFInfo
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- CN100570838C CN100570838C CNB2007100391842A CN200710039184A CN100570838C CN 100570838 C CN100570838 C CN 100570838C CN B2007100391842 A CNB2007100391842 A CN B2007100391842A CN 200710039184 A CN200710039184 A CN 200710039184A CN 100570838 C CN100570838 C CN 100570838C
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Abstract
The invention provides a kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity, this power MOS pipe is produced on the silicon substrate.The less thickness of grid oxide layer of producing that causes of oxygen flow is extremely uneven and easily make the metal-oxide-semiconductor electric leakage or puncture in the existing manufacture method.Manufacture method of the present invention is made the drain region by silicon substrate is carried out heavy doping earlier; Make and lightly doped epitaxial loayer identical then with this drain region doping type; Follow photoetching and etch the grid groove; Making grid oxic horizon by dry-oxygen oxidation afterwards, wherein, is that 15 to 18 liters/minute oxygen carries out dry-oxygen oxidation by range of flow; Make grid then; Then make transoid substrate opposite and and heavily doped source area identical with this drain region doping type with this drain region doping type; Make grid, source, drain electrode at last; Wherein, the degree of depth of this grid groove is greater than the gross thickness of transoid substrate and source area.Adopt method of the present invention can significantly improve the uniformity of grid oxic horizon.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity.
Background technology
Traditional metal-oxide-semiconductor, its grid, source electrode and drain electrode be (being horizontal channel) on same horizontal plane, this kind structure is very convenient during fabrication, but because of distance between source electrode and the drain electrode too closely can't satisfy the demand of high power transistor, in order to satisfy the demand of high power transistor, the metal-oxide-semiconductor (being power MOS pipe) of vertical-channel has appearred having in late 1970s, it has not only inherited advantages such as horizontal channel metal-oxide-semiconductor input impedance height, drive current be little, also has advantages such as withstand voltage height, operating current is big, power output is high, switching speed is fast.
Referring to Fig. 1, the cutaway view that has shown power MOS pipe, as shown in the figure, the gate trench of described power MOS pipe 1 is a U type groove, described power MOS pipe 1 comprises: drain region 10, epitaxial loayer 11, grid groove (not shown), grid oxic horizon 12, grid 13, transoid substrate 14, source area 15, gate electrode 16, source electrode 17 and drain electrode 18, wherein, epitaxial loayer 11 is identical with drain region 10 doping types with source area 15, and transoid substrate 14 is opposite with drain region 10 doping types.
Below with reference to Fig. 1 in detail the manufacture method of existing power MOS pipe 1 is described in detail, this power MOS pipe is produced on the silicon substrate, said method comprising the steps of: (a) silicon substrate is carried out heavy doping and make drain region 10; (b) make and lightly doped epitaxial loayer 11 identical with drain region 10 doping types; (c) photoetching and etch grid groove (not shown) on epitaxial loayer 11, the degree of depth of described grid groove is greater than the gross thickness of transoid substrate 14 and source area 15, and the depth-to-width ratio of described grid level groove is greater than 1.5; (d) by the grid oxic horizon 12 of dry-oxygen oxidation making predetermined thickness, wherein, oxidizing temperature is 1100 degrees centigrade, and oxidization time is 20 to 30 minutes, and oxygen flow is 10 liters/minute; (e) in described grid groove, make grid 13; (f) on epitaxial loayer 11, make the transoid substrate 14 opposite with drain region 10 doping types; (g) on transoid substrate 14, make and heavily doped source area 15 identical with drain region 10 doping types; (h) make gate electrode 16, source electrode 17 and drain electrode 18.
Evidence, the uniform film thickness rate of grid oxic horizon 12 (uniform film thickness rate=bottom portion of groove oxidated layer thickness ÷ groove top oxidated layer thickness) were less than 75% o'clock, and the power MOS pipe leakage current increases or be easily breakdown.The uniform film thickness rate of the grid oxic horizon of making by above-mentioned steps (d) 12 is all less than 75%, so big and very easily breakdown by power MOS pipe 1 leakage current of said method making.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity, can improve the uniformity of grid oxic horizon by described method greatly.
The object of the present invention is achieved like this: a kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity, this power MOS pipe is produced on the silicon substrate, and this method may further comprise the steps: (1) makes the drain region by silicon substrate is carried out heavy doping; (2) make an and lightly doped epitaxial loayer identical with this drain region doping type; (3) photoetching and etch the grid groove; (4) make the grid oxic horizon of predetermined thickness by dry-oxygen oxidation; (5) in this grid groove, make grid; (6) on this epitaxial loayer, make a transoid substrate opposite with this drain region doping type; (7) on this transoid substrate, make an and heavily doped source area identical with this drain region doping type; (8) make gate electrode, source electrode and drain electrode; Wherein, the degree of depth of this grid groove is greater than the gross thickness of transoid substrate and source area; In step (4), be that 15 to 18 liters/minute oxygen carries out dry-oxygen oxidation by range of flow.
In the manufacture method of the power MOS pipe of above-mentioned improved grid oxic horizon homogeneity, in step (4), oxidizing temperature is 1100 degrees centigrade, and oxidization time is 20 to 30 minutes.
In the manufacture method of the power MOS pipe of above-mentioned improved grid oxic horizon homogeneity, this grid groove is a U type groove, and the depth-to-width ratio of this U type groove is greater than 1.5.
In the manufacture method of the power MOS pipe of above-mentioned improved grid oxic horizon homogeneity, this predetermined thickness is 600 dusts.
In the manufacture method of the power MOS pipe of above-mentioned improved grid oxic horizon homogeneity, this grid is a polysilicon gate.
Generating the extremely uneven grid oxic horizon of thickness than the oxygen of low discharge with available technology adopting compares, the present invention brings up to 15 to 18 liters/minute with oxygen flow from 10 liters/minute, thereby improved the uniformity of grid oxic horizon, avoided the electric leakage or the puncture of the extremely uneven power MOS pipe that is caused of thickness of grid oxide layer.
Description of drawings
The manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the cutaway view of power MOS pipe;
Fig. 2 is the flow chart of the manufacture method of the power MOS pipe that improves grid oxic horizon homogeneity of the present invention;
Fig. 3 is a cutaway view of finishing the power MOS pipe behind the step S20 among Fig. 2;
Fig. 4 is a cutaway view of finishing the power MOS pipe behind the step S21 among Fig. 2;
Fig. 5 is a cutaway view of finishing the power MOS pipe behind the step S22 among Fig. 2;
Fig. 6 is a cutaway view of finishing the power MOS pipe behind the step S23 among Fig. 2;
Fig. 7 is a cutaway view of finishing the power MOS pipe behind the step S24 among Fig. 2;
Fig. 8 is a cutaway view of finishing the power MOS pipe behind the step S25 among Fig. 2;
Fig. 9 is a cutaway view of finishing the power MOS pipe behind the step S26 among Fig. 2;
Figure 10 is a cutaway view of finishing the power MOS pipe behind the step S27 among Fig. 2.
Embodiment
Below will be described in further detail the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity of the present invention.
The power MOS pipe that improves grid oxic horizon homogeneity of the present invention is produced on the silicon substrate, referring to Fig. 2, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity of the present invention is at first carried out step S20, by being carried out heavy doping, silicon substrate makes the drain region, wherein, when making the N channel power MOS pipe, silicon substrate is carried out the heavy doping of N type, when making the P channel power MOS pipe, silicon substrate is carried out the heavy doping of P type.In the present embodiment, be that example describes to make the N channel power MOS pipe, so silicon substrate is carried out the heavy doping of N type.
Referring to Fig. 3, shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S20, the drain region 30 shown in the figure has been carried out the heavy doping of N type.
Then continue step S21, make an and lightly doped outside imperial palace layer identical with described drain region doping type.Referring to Fig. 4, cooperate referring to Fig. 3, Fig. 4 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S21, and as shown in the figure, epitaxial loayer 31 is produced on the drain region 30, and described epitaxial loayer 31 is a N type light dope extension.
Then continue step S22, photoetching and etch the grid groove on epitaxial loayer.Referring to Fig. 5, cooperate referring to Fig. 3 and Fig. 4, Fig. 5 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S22, and as shown in the figure, grid groove 32 is a U type groove, and the depth-to-width ratio of described U type groove is greater than 1.5.
Then continuing step S23, make the grid oxic horizon of predetermined thickness by dry-oxygen oxidation, wherein, is that 15 to 18 liters/minute oxygen carries out dry-oxygen oxidation by range of flow.In the present embodiment, oxidizing temperature is 1100 degrees centigrade, and oxidization time is 20 to 30 minutes, and described predetermined thickness is 600 dusts.
Experiment shows, when the flow of oxygen is 15 to 18 liters/minute, uniform film thickness rate (uniform film thickness rate=grid groove 32 bottom grid oxidated layer thickness ÷ grid grooves 32 top grid oxidated layer thickness) is all greater than 75%, thereby avoided because the inhomogeneous power MOS pipe leakage current that causes of the extreme of thickness of grid oxide layer increases or easily breakdown phenomenon appearance.
Referring to Fig. 6, cooperate referring to Fig. 3 to Fig. 5, Fig. 6 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S23, as shown in the figure, grid oxic horizon 33 is distributed in grid groove 32 surfaces, and the uniform film thickness rate of grid oxic horizon 33 is greater than 75%.
Then continue step S24, in described grid groove, make grid.Referring to Fig. 7, cooperate referring to Fig. 3 to Fig. 6, Fig. 7 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S24, and as shown in the figure, grid 34 is in grid groove 32, and described grid 34 is a polysilicon gate.
Then continue step S25, on epitaxial loayer, make a transoid substrate opposite with described drain region doping type.Referring to Fig. 8, cooperate referring to Fig. 3 to Fig. 7, Fig. 8 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S25, and transoid substrate 35 is on epitaxial loayer 31, and described transoid substrate 35 is a P type substrate.
Then continue step S26, on the transoid substrate, make an and heavily doped source area identical with described drain region doping type.Referring to Fig. 9, cooperate referring to Fig. 3 to Fig. 8, Fig. 9 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S26, source area 36 is on transoid substrate 35, and source area 36 has been carried out the heavy doping of N type.
Then continue step S27, make gate electrode, source electrode and drain electrode.
Referring to Figure 10, cooperation is referring to Fig. 3 to Fig. 9, Figure 10 has shown the cutaway view of the power MOS pipe behind the present embodiment completing steps S27, as shown in the figure, gate electrode 37 is produced on the grid 34, source electrode 38 is produced on transoid substrate 35 and source area 36 intersections, and drain electrode 39 is produced on the back side of drain region 30; At this moment, the power MOS pipe of being made up of drain region 30, epitaxial loayer 31, grid groove 32, grid oxic horizon 33, grid 34, transoid substrate 35, source area 36, gate electrode 37, source electrode 38 and drain electrode 39 3 is completed.
It should be noted that the degree of depth of above-mentioned grid groove 32 is greater than the gross thickness of transoid substrate 35 and source area 36.
In sum, the present invention brings up to 15 to 18 liters/minute with oxygen flow from 10 liters/minute, thereby has improved the uniformity of grid oxic horizon 33, has avoided the electric leakage or the puncture of the extremely uneven power MOS pipes 3 that caused of grid oxic horizon 33 thickness.
Claims (6)
1, a kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity, this power MOS pipe is produced on the silicon substrate, and this method may further comprise the steps: (1) makes the drain region by silicon substrate is carried out heavy doping; (2) make an and lightly doped epitaxial loayer identical with this drain region doping type; (3) photoetching and etch the grid groove; (4) make the grid oxic horizon of predetermined thickness by dry-oxygen oxidation; (5) in this grid groove, make grid; (6) on this epitaxial loayer, make a transoid substrate opposite with this drain region doping type; (7) on this transoid substrate, make an and heavily doped source area identical with this drain region doping type; (8) make gate electrode, source electrode and drain electrode; Wherein, the degree of depth of this grid groove is greater than the gross thickness of transoid substrate and source area; It is characterized in that, in step (4), be that 15 to 18 liters/minute oxygen carries out dry-oxygen oxidation by range of flow.
2, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity as claimed in claim 1 is characterized in that, in step (4), oxidizing temperature is 1100 degrees centigrade, and oxidization time is 20 to 30 minutes.
3, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity as claimed in claim 1 is characterized in that, this grid groove is a U type groove.
4, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity as claimed in claim 3 is characterized in that, the depth-to-width ratio of this U type groove is greater than 1.5.
5, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity as claimed in claim 1 is characterized in that, this predetermined thickness is 600 dusts.
6, the manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity as claimed in claim 1 is characterized in that, this grid is a polysilicon gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100391842A CN100570838C (en) | 2007-04-06 | 2007-04-06 | A kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100391842A CN100570838C (en) | 2007-04-06 | 2007-04-06 | A kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity |
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| CN101281869A CN101281869A (en) | 2008-10-08 |
| CN100570838C true CN100570838C (en) | 2009-12-16 |
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| CNB2007100391842A Expired - Fee Related CN100570838C (en) | 2007-04-06 | 2007-04-06 | A kind of manufacture method that improves the power MOS pipe of grid oxic horizon homogeneity |
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| CN102376620B (en) * | 2010-08-09 | 2014-09-17 | 上海华虹宏力半导体制造有限公司 | Forming method of semiconductor device |
| CN103839791B (en) * | 2012-11-21 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | The preparation method being applied to the trench gate of groove type MOS device |
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Effective date of registration: 20111117 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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