CN103866283A - 一种lpcvd系统及其工艺 - Google Patents
一种lpcvd系统及其工艺 Download PDFInfo
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- CN103866283A CN103866283A CN201210544975.1A CN201210544975A CN103866283A CN 103866283 A CN103866283 A CN 103866283A CN 201210544975 A CN201210544975 A CN 201210544975A CN 103866283 A CN103866283 A CN 103866283A
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CN201210544975.1A CN103866283B (zh) | 2012-12-14 | 2012-12-14 | 一种lpcvd系统及其工艺 |
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CN201210544975.1A CN103866283B (zh) | 2012-12-14 | 2012-12-14 | 一种lpcvd系统及其工艺 |
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CN103866283A true CN103866283A (zh) | 2014-06-18 |
CN103866283B CN103866283B (zh) | 2016-12-28 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018196753A1 (zh) * | 2017-04-24 | 2018-11-01 | 君泰创新(北京)科技有限公司 | 一种基于lpcvd预热腔的加热装置 |
CN112145149A (zh) * | 2020-08-21 | 2020-12-29 | 中国地质大学(武汉) | 一种地热储层多相多场耦合输运过程模拟装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1445817A (zh) * | 2002-03-14 | 2003-10-01 | 瓦克硅电子股份公司 | 外延涂覆半导体晶片的方法及装置、以及外延涂覆的半导体晶片 |
CN101413114A (zh) * | 2008-12-09 | 2009-04-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片承载装置和等离子体加工设备 |
CN101824606A (zh) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种垂直喷淋式mocvd反应器 |
CN101949008A (zh) * | 2010-07-02 | 2011-01-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 载板、用载板进行沉积处理方法及等离子体沉积处理设备 |
CN102514932A (zh) * | 2011-11-30 | 2012-06-27 | 浙江大学 | 薄壁罐自动抓取机械手 |
CN102605342A (zh) * | 2011-12-19 | 2012-07-25 | 汉能科技有限公司 | 一种工艺腔加热保温系统 |
CN202936478U (zh) * | 2012-12-14 | 2013-05-15 | 汉能新材料科技有限公司 | 一种lpcvd系统 |
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2012
- 2012-12-14 CN CN201210544975.1A patent/CN103866283B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1445817A (zh) * | 2002-03-14 | 2003-10-01 | 瓦克硅电子股份公司 | 外延涂覆半导体晶片的方法及装置、以及外延涂覆的半导体晶片 |
US20030219981A1 (en) * | 2002-03-14 | 2003-11-27 | Ammon Wilfried Von | Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer |
CN101413114A (zh) * | 2008-12-09 | 2009-04-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片承载装置和等离子体加工设备 |
CN101824606A (zh) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种垂直喷淋式mocvd反应器 |
CN101949008A (zh) * | 2010-07-02 | 2011-01-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 载板、用载板进行沉积处理方法及等离子体沉积处理设备 |
CN102514932A (zh) * | 2011-11-30 | 2012-06-27 | 浙江大学 | 薄壁罐自动抓取机械手 |
CN102605342A (zh) * | 2011-12-19 | 2012-07-25 | 汉能科技有限公司 | 一种工艺腔加热保温系统 |
CN202936478U (zh) * | 2012-12-14 | 2013-05-15 | 汉能新材料科技有限公司 | 一种lpcvd系统 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018196753A1 (zh) * | 2017-04-24 | 2018-11-01 | 君泰创新(北京)科技有限公司 | 一种基于lpcvd预热腔的加热装置 |
CN112145149A (zh) * | 2020-08-21 | 2020-12-29 | 中国地质大学(武汉) | 一种地热储层多相多场耦合输运过程模拟装置 |
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Publication number | Publication date |
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CN103866283B (zh) | 2016-12-28 |
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Effective date of registration: 20170829 Address after: 100101, No. 14, building 1, 7, 101, 0801, 3, building 8, building No. 2, West Beichen Road, Chaoyang District, Beijing Patentee after: Chinese LIAN mobile energy investment Limited Address before: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 36 Patentee before: Hanergy New materials Technology Co., Ltd. |
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Effective date of registration: 20190203 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 100101 Beijing Chaoyang District Beichen West Road No. 8 Courtyard 3 Building 1 to 14 Floor 101, 7 Floor 0801 Patentee before: Chinese LIAN mobile energy investment Limited |
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Effective date of registration: 20190306 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |