CN103858182A - Light-transmitting electroconductive film, method for producing same, and use therefor - Google Patents
Light-transmitting electroconductive film, method for producing same, and use therefor Download PDFInfo
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- CN103858182A CN103858182A CN201380003369.1A CN201380003369A CN103858182A CN 103858182 A CN103858182 A CN 103858182A CN 201380003369 A CN201380003369 A CN 201380003369A CN 103858182 A CN103858182 A CN 103858182A
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- light transmission
- layer
- transmission conductive
- conductive film
- optics
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- 239000012789 electroconductive film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000005540 biological transmission Effects 0.000 claims description 211
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 27
- 239000012528 membrane Substances 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 220
- 229910003437 indium oxide Inorganic materials 0.000 description 43
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 43
- 239000002245 particle Substances 0.000 description 42
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
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- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
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- 238000002441 X-ray diffraction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
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- 239000000377 silicon dioxide Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
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- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 238000007733 ion plating Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- -1 silicon alkoxide Chemical class 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000252073 Anguilliformes Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
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- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229930192419 itoside Natural products 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
- B29D11/00788—Producing optical films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0073—Optical laminates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
- G06F3/0202—Constructional details or processes of manufacture of the input device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
Abstract
The present invention pertains to a light-transmitting electroconductive film containing (A) a light-transmitting support layer, (B) an optical adjustment layer, and (C) a light-transmitting electroconduction layer containing indium tin oxide, the optical adjustment layer (B) being arranged, either directly or with one or more other layers interposed therebetween, on at least one side of the light-transmitting support layer (A), and the light-transmitting electroconduction layer (C) being arranged on at least one side of the light-transmitting support layer (A) with at least the optical adjustment layer (B) interposed therebetween, the light-transmitting electroconductive film being characterized in that the optical adjustment layer (B) contains zirconia and is 0.4-3 mum thick, and in XRD measurement by a thin-film process, the ratio of the peak in the vicinity of 2theta = 28 DEG derived from the zirconia to the peak of a (222) surface derived from the indium tin oxide is 0.1-1.0.
Description
Technical field
The present invention relates to light transmission conductive film, its manufacture method and uses thereof.
Background technology
As the light transmission conductive film being equipped on touch panel, mostly use following light transmission conductive film, described light transmission conductive film at least one side of the light transmission supporting layer of being made by plastics etc. directly or dispose the light transmission conductive layer that contains indium oxide across other layer.
These light transmission conductive films are formed in the situation of touch panel as electrode, need to meet various characteristics requirement simultaneously.As such characteristic requirements, known following characteristic.
Sometimes light transmission conductive layer is configured to grid electrode, but from user side to observe time can identify this latticed structure, now, damaged as the identity of touch panel, therefore not preferred.In addition, sometimes the situation of having eliminated this phenomenon is called to " index matching is good ".
In addition, manufacture in the process of touch panel at assembling light transmission conductive film, light transmission conductive film is exposed in the chemicals processing of regulation.Therefore, exist the bad light transmission conductive film of chemical proofing to process the problem sustaining damage because of the chemicals in manufacturing process.
In addition, while being such as shaped to the above-mentioned electrode with latticed grade, carry out so-called etch processes for light transmission conductive layer, this etch processes is to process the regulation region of only removing light transmission conductive layer by chemicals, thereby forms the electrode of intended shape.Therefore, there are the following problems, that is: be difficult to by etch processes etched (, be difficult to remove the light transmission conductive layer of desired region) light transmission conductive film, production efficiency variation in the process of manufacturing touch panel, easily over etching is (, contrary with intention, the light transmission conductive layer in the region different from desired region is removed) light transmission conductive film, be difficult to shape light transmission conductive layer being shaped to expectation etc.
Like this, as the light transmission conductive film carrying on touch panel, require all light transmission conductive films of excellence of (1) index matching, (2) chemical proofing and (3) etching.
Prior art document
Patent documentation
Patent documentation 1:(Japan) JP 2010-6647 communique
Patent documentation 2:(Japan) JP 2007-42284 communique
Summary of the invention
Invent technical problem to be solved
Problem of the present invention is, to contain (A) light transmission supporting layer, (B) optics adjust layer and (C) contain indium oxide the light transmission conductive film of light transmission conductive layer, improve the balance of its (1) index matching, (2) chemical proofing and (3) etching.
For solving the method for problem
The inventor etc. are through further investigation discovery first repeatedly, and employing contains zirconia and thickness is 0.4～3
μthe optics of m is adjusted layer (B), and with regard to film integral, adopting in the XRD determining of membrane process, making to be derived near peak value zirconic 2 θ=28 ° is 0.1～1.0 with the ratio of peak value of (222) face that is derived from indium oxide, can solve the problems of the technologies described above thus.The present invention completes through various research based on above-mentioned new opinion, below sets forth the present invention.
Section 1:
A kind of light transmission conductive film, it comprises:
(A) light transmission supporting layer;
(B) optics is adjusted layer; And
(C) the light transmission conductive layer that contains tin indium oxide,
Described optics is adjusted layer (B) other layer directly or more than one deck and is disposed at least simultaneously upper of described light transmission supporting layer (A), and,
Described light transmission conductive layer (C) is at least adjusted layer (B) across optics and is disposed at least simultaneously upper of described light transmission supporting layer (A), wherein,
Described optics is adjusted layer (B) and is contained zirconia, and thickness is 0.4～3 μ m, and,
Adopting in the membrane process XRD determining of carrying out, being derived near peak value zirconic 2 θ=28 ° is 0.1～1.0 with the ratio of peak value of (222) face that is derived from tin indium oxide.
Section 2:
Light transmission conductive film as described in Section 1, wherein, described optics adjust layer (B) with the average surface roughness Ra of face light transmission supporting layer (A) opposition side be 0.4～2.0nm.
Section 3:
Light transmission conductive film as described in Section 1 or Section 2, wherein, described zirconic average grain diameter is 10～40nm.
Section 4:
Light transmission conductive film as described in any one in Section 1～Section 3, wherein, described light transmission conductive layer (C) comprises the particle that contains indium oxide, the average grain diameter of this particle is 3.0～8.0nm.
Section 5:
Light transmission conductive film as described in any one in Section 1～Section 4, wherein, described light transmission conductive layer (C) can obtain the layer heating that contains tin indium oxide at 90～160 DEG C in atmosphere for 10～120 minutes.
Section 6:
Light transmission conductive film as described in any one in Section 1～Section 5, wherein, light transmission conductive layer (C) contains tin indium oxide.
Section 7:
A kind of touch panel, it contains the light transmission conductive film described in any one in Section 1～Section 6.
Invention effect
According to the present invention, can provide contain (A) light transmission supporting layer, (B) optics adjust layer and (C) contain indium oxide the light transmission conductive film of light transmission conductive layer, the balance of its (1) index matching, (2) chemical proofing and (3) etching improves.
Brief description of the drawings
Fig. 1 is the profile that the one side that is illustrated in light transmission supporting layer (A) disposes optics and adjust the light transmission conductive film of the present invention of layer (B) and light transmission conductive layer (C) successively;
Fig. 2 is the profile that disposes successively the light transmission conductive film of the present invention of optics adjustment layer (B) and light transmission conductive layer (C) on the two sides that represents light transmission supporting layer (A);
Fig. 3 is that the one side that is illustrated in light transmission supporting layer (A) disposes first optics adjustment layer (B) and a light transmission conductive layer (C) successively, and directly disposes the profile of the light transmission conductive film of the present invention of the second optics adjustment layer (B) at another side;
Fig. 4 is the profile that the one side that is illustrated in light transmission supporting layer (A) disposes optics and adjust the light transmission conductive film of the present invention of layer (B), priming coat (D) and light transmission conductive layer (C) successively;
Fig. 5 is the profile that the two sides that is illustrated in light transmission supporting layer (A) disposes optics and adjust the light transmission conductive film of the present invention of layer (B), priming coat (D) and light transmission conductive layer (C) successively;
Fig. 6 is that the one side that is illustrated in light transmission supporting layer (A) disposes the first optics adjustment layer (B), priming coat (D) and light transmission conductive layer (C) successively, and directly disposes the profile of the light transmission conductive film of the present invention of the second optics adjustment layer (B) at another side.
Description of symbols
1 light transmission conductive film
11 light transmission supporting layers (A)
12 optics are adjusted layer (B)
13 light transmission conductive layers (C)
14 priming coats (D)
Embodiment
1.
light transmission conductive film
Light transmission conductive film of the present invention comprises:
(A) light transmission supporting layer;
(B) optics is adjusted layer; And
(C) the light transmission conductive layer that contains indium oxide,
Described optics is adjusted layer (B) other layer directly or more than one deck and is disposed at least simultaneously upper of described light transmission supporting layer (A), and,
Described light transmission conductive layer (C) is at least adjusted layer (B) across optics and is disposed at least simultaneously upper of described light transmission supporting layer (A), wherein,
Described optics is adjusted layer (B) and is contained zirconia, and thickness is 0.4～3 μ m, and,
Adopting in the membrane process XRD determining of carrying out, being derived near peak value zirconic 2 θ=28 ° is 0.1～1.0 with the ratio of peak value of (222) face that is derived from tin indium oxide.
In the present invention, " light transmission " refers to and has the character (translucent) that makes light transmission." light transmission " comprises transparent (transparent)." light transmission " for example refers to, total light transmittance is more than 80%, preferably more than 85%, and more preferably more than 87% character.In the present invention, total light transmittance uses nephelometer (Japanese electricity Se company system, trade name: NDH-2000, or its analogous instrument) to measure based on JIS-K-7105.
In this manual, while mentioning the two-layer relative position relation in the multiple layers that are configured in light transmission supporting layer (A) one side, sometimes taking light transmission supporting layer (A) as benchmark, to be called " upper strata " apart from light transmission supporting layer (A) one deck far away, be called " lower floor " etc. apart from nearer another of light transmission supporting layer (A) layer.
In below to the explanation of each layer, as long as no particularly pointing out, in the present invention, the thickness of each layer uses commercially available reflection beam splitting film thickness gauge (great mound electronics, FE-3000 or its analogous instrument) try to achieve.Also can try to achieve by using commercially available transmission electron microscope to observe the thickness of each layer, to replace said method.Particularly, use slicing machine or focused ion beam etc. along with face vertical direction, light transmission conductive film being cut thinly, observe its cross section.
Fig. 1 represents an embodiment of light transmission conductive film of the present invention.In this embodiment, dispose successively optics in the one side of light transmission supporting layer (A) and adjust layer (B) and light transmission conductive layer (C).
Fig. 2 represents another embodiment of light transmission conductive film of the present invention.In this embodiment, dispose successively optics on the two sides of light transmission supporting layer (A) and adjust layer (B) and light transmission conductive layer (C).
1.1
light transmission supporting layer (A)
In the present invention, light transmission supporting layer refers in the light transmission conductive film that contains light transmission conductive layer, the layer of the effect of the layer that performance support is contained light transmission conductive layer.Light transmission supporting layer (A) is not particularly limited, and for example, can use the layer using usually used as light transmission supporting layer in touch panel light transmission conductive film.
The material of light transmission supporting layer (A) is not particularly limited, and for example, can enumerate glass and various organic polymers etc.Organic polymer is not particularly limited, for example, can enumerate: polyester resin, acetates resin, polyethers resin, polycarbonate resin, polyacrylic acid resinoid, polymethacrylic acid resin, polystyrene resins, polyolefin resin, polyimide based resin, polyamide-based resin, polyvinyl chloride resin, polyacetals resin, polyvinylidene chloride resinoid and polyphenylene sulfide resinoid etc.Polyester resin is not particularly limited, and for example, can enumerate: PETG (PET) PEN (PEN) etc.The material preferred polyester resinoid of light transmission supporting layer (A), particularly preferably PET.Light transmission supporting layer (A) can be made up of separately any in them, also can be made up of multiple in them.
The thickness of light transmission supporting layer (A) is not particularly limited, and for example, can enumerate: the scope of 2～300 μ m.
1.2
optics is adjusted layer (B)
In light transmission conductive film of the present invention, dispose optics at least one side other layer direct or more than one deck of light transmission supporting layer (A) and adjust layer (B).Optics is adjusted layer (B) and is preferably directly disposed on the face of light transmission supporting layer (A).
Optics is adjusted layer (B) can configure one deck.Or configuration or be spaced from each other configuration across other layer above also can two layers adjoins each other.
Also can the directly configuration optics adjustment layer (B) respectively on the two sides of light transmission supporting layer (A).
Optics is adjusted in the situation that layer (B) is the two layers of configuration that adjoins each other above, and compared with being positioned at the optics adjustment layer of top, the optics adjustment layer that is positioned at below can have higher refractive index.
By adopting such structure, two interlayers that refractive index is different produce optical interference, and thus, the transmitance of light transmission conductive film improves, therefore preferred.
In the present invention, optics adjustment layer refers to the layer of bringing into play the effect of the transmitance raising that makes light transmissive film by optical interference.Optics is adjusted layer (B) and is not particularly limited, and for example, can use in touch panel light transmission conductive film and adjust usually used as optics the layer that layer uses.
Optics is adjusted layer (B) and is contained zirconia.The zirconia that optics adjustment layer (B) contains is preferably particle shape, and more preferably average grain diameter is 10～40nm, and further preferably average grain diameter is 10～30nm.If zirconic average grain diameter is less than 40nm, etching is further improved, and in addition, if be greater than 10nm, dispersiveness is further improved, and processability is further improved.
Light transmission conductive film of the present invention is adopting in the XRD determining of membrane process, shows near peak optics is adjusted zirconic 2 θ=28 ° of layer (B).
In the present invention, adopt the XRD determining of membrane process to carry out as follows.
Film sample for evaluation horizontal type X-ray diffraction device SmartLab or analogous instrument that X-ray diffraction device uses Rigaku to manufacture, measure by membrane process.Employing beam collimation optics configuration, light source with the power of 40kV, 30mA use CuK alpha ray (wavelength:
).Light incident side slit system adopts 5.0 ° of Suo Le slits, highly controls slit 10mm, entrance slit 0.1mm, and sensitive side slit adopts parallel slits analyzer (PSA) 0.114deg..Detector adopts scintillation counter.Sample stage adopts porous adsorption sample seat, adsorbs fixed sample by pump.Measure 0.50 ° of the incidence angle with X ray, can not get in the situation of enough detection sensitivities, measure with under 0.40 °, 0.45 °, 0.55 ° and 0.60 ° of incidence angle respectively, adopt the result of target peak maximum.Step interval and finding speed are suitably adjusted into the degree that can identify X-ray diffraction pattern.Preferably under 0.01 ° of step interval, 3.0 °/min of finding speed, measure.In the measurement range of 10 °～60 °, measure.In addition, without the X-ray diffraction pattern obtaining is carried out to monochromatization, each peak strength adopts the value obtaining after subtracting background.
In the present invention, zirconic average grain diameter is tried to achieve by the observation of transmission electron microscope.Particularly, use slicing machine or focused ion beam etc. that light transmission conductive film is cut thinly, observe its cross section.The arithmetic mean of the long axis direction length of 14 particles that obtain exclude the particle of 3 long axis direction length maximums and 3 long axis direction length minimums from 20 particles of discernible random selection thus, is as average grain diameter.When the particle of result None-identified ormal weight that transmission electron microscope is observed, observe in the zones of different of same sample.
In addition, can not distinguish in the situation of Zirconia particles and other particle, carry out the elementary analysis of particle by EDX or EELS, determine Zirconia particles.
The thickness that optics is adjusted layer (B) is 0.4～3 μ m, preferably 0.5～2.5 μ m, more preferably 1～2 μ m.Be less than 3 μ m if optics is adjusted the thickness of layer (B), index matching is further improved.In addition, if be greater than 0.4 μ m, can more easily confirm to be derived from zirconic peak, index matching is further improved.
In the present invention, the thickness of optics adjustment layer (B) is measured as follows.Observe and try to achieve by transmission electron microscope.Particularly, use slicing machine or focused ion beam etc. that light transmission conductive film is cut thinly, observe its cross section.
Optics is adjusted layer (B) from etching, with the preferably 0.4～2.0nm of average surface roughness Ra of the side of light transmission supporting layer (A) opposition side, more preferably 0.5～1.8nm, and further preferred 0.5～1.5nm.
In the present invention, average surface roughness Ra refers to the arithmetic average of the roughness that uses scanning type probe microscope mensuration.Particularly, average surface roughness Ra in the present invention refers to following value: use commercially available scanning type probe microscope (Shimadzu Scisakusho Ltd, SPM-9700, or equal instrument) under the contact mode of regulation, scan 1 μ m with probe (OLYMPUS company manufactures OMCL-TR800-PSA-1 spring constant 0.15N/m)
2mensuration face, the absolute deviation with respect to average line obtaining is thus averaged and the value that obtains.
Optics is adjusted layer (B) as long as can reach effect of the present invention, is not particularly limited, and except zirconia, can also contain other composition.As other composition, as long as can reach effect of the present invention, be not particularly limited, for example, can enumerate: the micelle of acrylic resin, silicone based resin, melamine resinoid and alkyd based resin and silicon dioxide, zirconia, titanium oxide and aluminium oxide etc. etc.Optics is adjusted layer (B) except containing zirconia, can also contain separately any in mentioned component, also can contain multiple.
Optics is adjusted layer (B) and is also contained in the situation of other composition except zirconia, can reach effect of the present invention as long as zirconic in entirety containing proportional, is not particularly limited, preferably more than 20 % by weight.
The method that configuration optics is adjusted layer (B) is not particularly limited, and for example, can enumerate: after coating film forming, and method and the method being cured by ultraviolet ray or electron beam isoreactivity energy line etc. of utilizing heat to be cured.From productivity ratio, be preferably cured by ultraviolet ray.
1.3
light transmission conductive layer (C)
Light transmission conductive layer (C) contains indium oxide.Light transmission conductive layer (C), except indium oxide, can also contain dopant.Dopant is not particularly limited, and for example, can enumerate: tin-oxide, zinc oxide, cerium oxide, gadolinium oxide, Si oxide and titanium oxide etc.Light transmission conductive layer (C), except containing indium oxide, as dopant, can contain separately any in above-mentioned dopant, also can contain multiple.As light transmission conductive layer (C), as a current preferred example, can enumerate the layer that contains tin indium oxide (tin-dopedindiumoxide (ITO)), still, also can use as required the layer that contains indium oxide that contains other dopant.
Tin indium oxide is the indium oxide doped with tin.As tin indium oxide, preferably use indium oxide (III) (In
2o
3) and tin oxide (IV) (SnO
2) tin indium oxide that obtains.In this case, SnO
2addition be not particularly limited, for example, can enumerate 1～15 % by weight, preferably 2～10 % by weight, more preferably 3～8 % by weight etc.In addition, light transmission conductive layer (C) can also contain the material that further adds other dopant and obtain in tin indium oxide, but total weight range of dopant is no more than above-mentioned number range.Above-mentioned other dopant is not particularly limited, and for example, can enumerate: zinc, cerium, gadolinium, silicon and titanium etc.
Light transmission conductive layer (C) can contain separately any in above-mentioned various tin indium oxide, also can contain multiple.
Light transmission conductive layer (C) can comprise the particle that contains indium oxide.As long as the average grain diameter of this particle can reach effect of the present invention, be not particularly limited, from easy reduction than resistance, preferably 3.0～8.0nm, more preferably 3.5～6.5nm, further preferred 3.5～6.0nm.As the particle that contains indium oxide, as a current preferred example, can enumerate tin indium oxide particle, still, also can use as required the indium oxide particle that contains other dopant.
In the present invention, the average grain diameter of the particle that contains indium oxide is tried to achieve as follows: use commercially available scanning type probe microscope (Shimadzu Scisakusho Ltd, SPM-9700, or analogous instrument) under the contact mode of regulation, scan 0.5 μ m with probe (OLYMPUS company manufactures OMCL-TR800-PSA-1 spring constant 0.15N/m, or analogous instrument)
2mensuration face, tried to achieve by the image obtaining.Particularly, by observing image, the particle of 1nm～30nm is classified to particle diameter as unit taking 1nm, add up the number of particles of accumulative total under each particle diameter, using the particle diameter of the D50 in this particle size distribution as average grain diameter.
Light transmission conductive layer (C) is not particularly limited, and can be crystal or noncrystal or their mixture.
With regard to light transmission conductive film of the present invention, adopting in the XRD determining of membrane process, the peak value that is derived from (222) face of the contained indium oxide of light transmission conductive layer (C) appears near 2 θ=30.5 °.This peak value is derived from indium oxide self, therefore, even the in the situation that of being also added with above-mentioned various dopant in indium oxide, also still observes identical peak value.In addition, the peak value of (222) face is to be derived from maximum peak value in all peak values of indium oxide (or be also added with in the situation of dopant, be the mixture of indium oxide and dopant).
In addition, with regard to light transmission conductive film of the present invention, adopting in the XRD determining of membrane process, being derived near peak value zirconic 2 θ=28 ° is 0.1～1.0 with the ratio of peak value of (222) face that is derived from indium oxide.Thus, the balance of (1) index matching of light transmission conductive film of the present invention, (2) chemical proofing and (3) etching improves.
Have above-mentioned characteristic light transmission conductive layer (C) can by utilizing heat treated to make indium oxide, (or being also added with in the situation of dopant, be the mixture of indium oxide and dopant; This mixture and indium oxide are referred to as to " indium oxide etc. " below) crystallization and obtaining.As the condition of this heat treated, can in the scope that obtains the light transmission conductive layer (C) with above-mentioned characteristic, suitably set, be not particularly limited, for example, can enumerate: 90～160 DEG C, 10～120 minutes such heat treated conditions etc. in atmosphere.Particularly, can enumerate: 140 DEG C, 60 minutes such heat treated conditions in atmosphere.By by the raw material being formed by indium oxide etc. or the raw material that contains indium oxide etc. heat treated 10～120 minutes at 90～160 DEG C in atmosphere, the further crystallization of accelerating oxidation indium etc., thus obtain having the light transmission conductive layer (C) of above-mentioned characteristic with the form of the non-crystal mixture of the crystal that contains indium oxide etc. or the crystal and the indium oxide etc. that contain indium oxide etc.Although be not particularly limited, the light transmission conductive layer (C) with above-mentioned characteristic can obtain as follows: on the layer as substrate, form the layer that contains indium oxide etc., then heat treated 10～120 minutes at 90～160 DEG C in atmosphere.
Light transmission conductive layer (C) is at least disposed at least one side of light transmission supporting layer (A) across optics adjustment layer (B).
The thickness of light transmission conductive layer (C) is 5～200nm, preferably 10～100nm, more preferably 15～50nm.In addition, as capacitive touch panel light transmission conductive film, the thickness of light transmission conductive layer (C) is 15～40nm, preferably 15～38nm, more preferably 17～35nm.
Form light transmission conductive layer (C) method can be in wet type and dry type any.
As the method that forms light transmission conductive layer (C), be not particularly limited, for example, can enumerate: ion plating method, sputtering method, vacuum vapour deposition, CVD method and pulsed laser deposition etc.As the method that forms light transmission conductive layer (C), preferably sputtering method.
The situation that forms light transmission conductive layer (C) by sputtering method, is not particularly limited, for example, and by being 7.0 × 10 in partial pressure of oxygen
-3under condition more than Pa, form, adopting in the XRD determining of membrane process, can suitably be adjusted into 0.1～1.0 with the ratio of peak value of (222) face that is derived from indium oxide by being derived near peak value zirconic 2 θ=28 °.
1.4
priming coat (D)
In light transmission conductive film of the present invention, can be on the face that disposes light transmission conductive layer (C) of light transmission supporting layer (A), other layer configuration priming coat (D) directly or more than one deck.While disposing priming coat (D), described at least one, light transmission conductive layer (C) is at least adjusted layer (B) across described priming coat (D) and optics and is disposed on described of described light transmission supporting layer (A).In this case, described at least one, light transmission conductive layer (C) can be with described priming coat (D) in abutting connection with configuration.In addition, in this case, priming coat (D) is disposed at a side of adjusting layer (B) more close light transmission conductive layer (C) than optics conventionally.
Fig. 4 represents an embodiment of light transmission conductive film of the present invention.In this embodiment, in the one side of light transmission supporting layer (A), disposed adjacent has optics to adjust layer (B), priming coat (D) and light transmission conductive layer (C) successively.
Fig. 5 represents an embodiment of light transmission conductive film of the present invention.In this embodiment, on the two sides of light transmission supporting layer (A), disposed adjacent has optics to adjust layer (B), priming coat (D) and light transmission conductive layer (C) successively.
Fig. 6 represents an embodiment of light transmission conductive film of the present invention.In this embodiment, there is the first optics to adjust layer (B), priming coat (D) and light transmission conductive layer (C) in the one side of light transmission supporting layer (A) successively disposed adjacent, directly dispose the second optics at another side and adjust layer (B).
The material of priming coat (D) is not particularly limited, and for example, can be the material with dielectricity.The material of priming coat (D) is not particularly limited, and for example, can enumerate: silica, silicon nitride, silicon oxynitride, carborundum, silicon alkoxide, alkylsiloxane and condensation product thereof, polysiloxanes, silsesquioxane and poly-silazane etc.Priming coat (D) can be made up of separately any in mentioned component, also can be made up of multiple.Preferably contain the light transmission basalis of silica, the light transmission basalis more preferably being formed by silica.
Priming coat (D) can dispose one deck.Or two layers of configuration or separate configuration across other layer of adjoining each other above.
The thickness of every one deck priming coat (D) can be enumerated 15～40nm etc.When more than two layers disposed adjacent, the gross thickness of adjacent whole priming coats (D) is in above-mentioned scope.In the above-mentioned example of enumerating, compared with the former, more preferably the latter.
As the method for configuration priming coat (D), can adopt any in wet type and dry type, be not particularly limited, as wet type, can enumerate: for example, the method for sol-gel process and coated fine particles dispersion liquid or colloidal solution etc.As the dry method of configuration priming coat (D), can enumerate: for example, on adjacent layer, carry out the method for lamination etc. by sputtering method, ion plating method, vacuum vapour deposition or pulsed laser deposition.
1.5
other layer
Light transmission conductive film of the present invention also can configure as follows,, the optics that disposes at light transmission supporting layer (A) is adjusted on the face of a side of layer (B) and light transmission conductive layer (C), and further configuration is selected from least one layer in priming coat (D) and at least one other layer (E).
Other layer (E) is not particularly limited, and for example, can enumerate: adhesive linkage etc.
Adhesive linkage refers to and is disposed between two layers, with these the two layers configuration that adjoins each other, for layer this two interlayer is mutual bonding and configuration.Adhesive linkage is not particularly limited, and for example, can use the layer using usually used as adhesive linkage in touch panel light transmission conductive film.
1.6
the purposes of light transmission conductive film of the present invention
Light transmission conductive film of the present invention is preferred for touch panel.Light transmission conductive film of the present invention is particularly preferred for capacitive touch panel.Light transmission conductive film General Requirements surface resistivity (film resistor) for the manufacture of resistive film mode touch panel is 100～1,000 Ω/sq left and right.On the other hand, low comparatively favourable for the manufacture of the common surface resistivity of light transmission conductive film of capacitive touch panel.The resistivity of light transmission conductive film of the present invention is lowered, and is therefore preferred for manufacturing capacitive touch panel.The detailed content of capacitive touch panel is as described in the explanation in project 2.
2.
capacitive touch panel of the present invention
Capacitive touch panel of the present invention comprises light transmission conductive film of the present invention, also comprises as required other parts.
As the concrete structure example of capacitive touch panel of the present invention, can enumerate following structure example.In addition, when use, make protective layer (1) side towards operation screen side, make glass (5) side towards a side contrary with operation screen.
(1) protective layer
(2) light transmission conductive film of the present invention (Y direction)
(3) insulating barrier
(4) light transmission conductive film of the present invention (X-direction)
(5) glass
Capacitive touch panel of the present invention is not particularly limited, for example, can according to common method by above-mentioned (1)～(5) and as required other parts of use combine to manufacture.
3.
the manufacture method of light transmission conductive film of the present invention
Light transmission conductive film of the present invention can be configured to manufacture to each layer by the explanation according to each layer like that.For example, can be on the face of a side that disposes light transmission conductive layer (C) of light transmission supporting layer (A), configuration successively from lower layer side, but configuration sequence is not particularly limited.For example, also can start most for example, to configure other layer in the one side of light transmission supporting layer (A) layer (, light transmission conductive layer (C)) in addition.Or, make on the one hand two or more layers configure in the mode adjoining each other and obtain a kind of composite bed, then or meanwhile, similarly make on the other hand two or more layers configure and obtain a kind of composite bed in the mode adjoining each other, then these two kinds of composite beds are configured in the mode adjoining each other.
Embodiment
Below, enumerate embodiment and further describe the present invention, but the invention is not restricted to these embodiment.
The upper formation of PET resin base material (light transmission supporting layer) at thick 125 μ m contains the optics adjustment layer that average grain diameter is the acrylic resin of the Zirconia particles of 16nm, and the thickness that makes this optics adjustment layer is 0.5 μ m.
In addition, in embodiment and comparative example, the following operation of the average grain diameter of Zirconia particles is also tried to achieve by the observation of transmission electron microscope.Particularly, with resin-coating light transmission conductive film, use slicing machine in the direction perpendicular to film, light transmission conductive film to be cut thinly, observe its cross section.Thus, will from 20 particles of discernible random selection, exclude maximum and 3 the long axis direction length minimums of 3 long axis direction length particle and obtain 14 particles, using the arithmetic mean of the long axis direction length of these 14 particles as average grain diameter.
Now, the Ra of optics adjustment layer is 0.7nm.On this optics adjustment layer, form the SiO of 20nm by sputtering method
2layer, then form tin indium oxide (ITO) film of 23nm.Particularly, target uses the sintered material being made up of the indium oxide of 95 % by weight and the tin oxide of 5 % by weight, forms light transmission conductive layer by DC magnetron sputtering system, carries out heat treated in atmosphere, finally obtains light transmission conductive film of the present invention.Now, will in chamber, be evacuated down to 5.0 × 10
-4after Pa is following, in above-mentioned chamber, import oxygen and argon gas, making partial pressure of oxygen is 6.5 × 10
-3pa, making cavity indoor pressure is 0.3～0.4Pa, carries out sputter process.
Then, in atmosphere, at 140 DEG C, carry out 60 minutes heat treated, obtain light transmission conductive film of the present invention.Evaluate this film by XRD and AFM.
In addition, in embodiment and comparative example, adopt the XRD determining of membrane process to carry out as follows.The film sample for evaluation horizontal type X-ray diffraction device SmartLab that X-ray diffraction device uses Rigaku to manufacture measures by membrane process.Employing beam collimation optics configuration, light source with the power of 40kV, 30mA use CuK alpha ray (wavelength:
).Light incident side slit system adopts 5.0 ° of Suo Le slits, highly controls slit 10mm, entrance slit 0.1mm, and sensitive side slit adopts parallel slits analyzer (PSA) 0.114deg..Detector adopts scintillation counter.Sample stage adopts porous adsorption sample seat, adsorbs fixed sample by pump.With 0.50 ° of fixing light incident side, be 0.01 ° at step interval, finding speed is 3.0 °/min, is to measure under the condition of 10 °～60 ° in measurement range.
The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 0.15 with the ratio of peak value of (222) face that is derived from indium oxide.
In addition, in embodiment and comparative example, the average grain diameter of tin indium oxide is measured as follows.Use scanning type probe microscope (Shimadzu Scisakusho Ltd, SPM-9700) to scan 0.5 μ m with probe (OLYMPUS company manufactures OMCL-TR800-PSA-1 spring constant 0.15N/m) under the contact mode of regulation
2mensuration face, tried to achieve by the image obtaining.Particularly, by observing image, the tin indium oxide particle of 1nm～30nm is classified to particle diameter as unit taking 1nm, add up the number of particles of accumulative total under each particle diameter, using the particle diameter of the D50 in this particle size distribution as average grain diameter.
The average grain diameter of tin indium oxide is 6.2nm.
embodiment 2
It is that the optics of the acrylic resin of the Zirconia particles of 25nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 1.0 μ m.In addition, obtain similarly to Example 1 light transmission conductive film of the present invention.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 0.30 with the ratio of peak value of (222) face that is derived from indium oxide.In addition, the average grain diameter of tin indium oxide is 5.7nm.
embodiment 3
It is that the optics of the acrylic resin of the Zirconia particles of 25nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 2.0 μ m.In addition, obtain similarly to Example 1 light transmission conductive film of the present invention.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 0.65 with the ratio of peak value of (222) face that is derived from indium oxide.In addition, the average grain diameter of tin indium oxide is 3.6nm.
embodiment 4
It is that the optics of the acrylic resin of the Zirconia particles of 25nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 2.9 μ m.In addition, obtain similarly to Example 1 light transmission conductive film of the present invention.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° with respect to the ratio of the peak value of (222) face that is derived from indium oxide is 0.94.In addition, the average grain diameter of tin indium oxide is 4.2nm.
embodiment 5
It is that the optics of the acrylic resin of the Zirconia particles of 34nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 1.0 μ m.Now, the Ra of optics adjustment layer is 1.8nm.In addition, obtain similarly to Example 1 light transmission conductive film of the present invention.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 0.32 with the ratio of peak value of (222) face that is derived from indium oxide.In addition, the average grain diameter of tin indium oxide is 7.7nm.
comparative example 1
It is that the optics of the acrylic resin of the Zirconia particles of 16nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 0.2 μ m.In addition, obtain similarly to Example 1 light transmission conductive film.The evaluation result of XRD is not detect and be derived from zirconic peak.In addition, the average grain diameter of tin indium oxide is 6.8nm.
comparative example 2
It is that the optics of the acrylic resin of the Zirconia particles of 16nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 5.0 μ m.In addition, obtain similarly to Example 1 light transmission conductive film.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 1.5 with the ratio of peak value of (222) face that is derived from indium oxide.In addition, the average grain diameter of tin indium oxide is 4.9nm.
comparative example 3
It is that the optics of the acrylic resin of the Zirconia particles of 45nm is adjusted layer that formation contains average grain diameter, and to make the thickness of this optics adjustment layer be 2.8 μ m.Now, the Ra of optics adjustment layer is 2.5nm.In addition, obtain similarly to Example 1 light transmission conductive film.The evaluation result of XRD is, being derived near peak value zirconic 2 θ=28 ° is 1.5 with the ratio of peak value of (222) face that is derived from indium oxide.In addition, the average grain diameter of tin indium oxide is 8.4nm.
For the as above embodiment 1～5 that obtains of operation and the light transmission conductive film of comparative example 1～3, evaluate as follows index matching (IM) and etching.
The evaluation of index matching is carried out as follows.In order to form 5cm pectination pattern (wide 2mm, long 10mm) near the Width the central portion of light transmission conductive film that cuts into wide 5cm × long 10cm, proceed as follows.
A limit in the silicane rubber plate of wide 5cm × long 5cm four limits is cut into pectination pattern-like.Cut into the ITO side laminating silicane rubber plate of light transmission conductive film of wide 5cm × long 10cm, and making pectination pattern arrangement near the central portion of light transmission conductive film.Silicon rubber side at the light transmission conductive film that is fitted with silicon rubber applies resist, dry after 30 minutes at 80 DEG C, and silicane rubber plate is peeled.Thus, the light transmission conductive film that obtain taking pectination pattern as border, exposes on ITO surface and resist surface.It is flooded 20 minutes in 20% hydrochloric acid, ITO is dissolved.Then, impregnated in the KOH solution of 0.5M and carry out ultrasonic wave processing in 10 minutes, wash, obtain thus the pectination patterned films of ITO.
Pectination patterned films is placed on white paper and black paper, confirms respectively the identity at the edge of ITO pattern.
Evaluate and carry out as follows.On white paper and all almost can not confirm the pattern of ITO on black paper time, be evaluated as " ◎ "; On white paper and almost can not confirm the pattern of ITO on black paper, but when can confirming pattern sometimes, viewing angle is evaluated as "○" by changing for all samples; In having sample, institute 5 one is evaluated as " △ " while confirming pattern surely by changing viewing angle; All pattern can be confirmed in two kinds of samples time, be evaluated as "×".
The evaluation of etching is carried out as follows.
Light transmission conductive film be impregnated in 20% hydrochloric acid, obtain until time that cannot meter surface resistance.For light transmission conductive film, from 10 seconds～90 seconds, set dip time with 10 seconds intervals, 0 sheet resistance is become to the unmeasured time as the etch processes end time.
The etch processes end time is evaluated as " ◎ " while being 40 seconds, 50 seconds; The etch processes end time is evaluated as "○" while being 30 seconds, 60 seconds, 70 seconds; The etch processes end time is evaluated as " △ " while being 20 seconds, 80 seconds; The etch processes end time be 10 seconds and following, 90 seconds and be evaluated as "×" when above.Too short or the long control that all can make etch processes of disposing time becomes difficulty, therefore not preferred.
The evaluation of chemical proofing is carried out as follows.Light transmission conductive film is flooded 30 minutes in 1% hydrochloric acid, wash.Try to achieve the ratio R/R0 of the sheet resistance value R0 before sheet resistance value R and salt acid dip now.Now, if R/R0 is less than 1.1, be evaluated as " ◎ "; If R/R0 is more than 1.1 and be less than 1.2, be evaluated as "○"; If R/R0 is more than 1.2 and be less than 1.3, be evaluated as " △ ", if R/R0, more than 1.3, is evaluated as "×".
Evaluation result is as shown in table 1.In table 1, being derived near peak value zirconic 2 θ=28 ° is " peakedness ratio " with the ratio brief note of peak value of (222) face that is derived from indium oxide.
[table 1]
Claims (6)
1. a light transmission conductive film, it comprises:
(A) light transmission supporting layer;
(B) optics is adjusted layer; And
(C) the light transmission conductive layer that contains tin indium oxide,
Described optics is adjusted layer (B) other layer directly or more than one deck and is disposed at least simultaneously upper of described light transmission supporting layer (A), and,
Described light transmission conductive layer (C) is at least adjusted layer (B) across optics and is disposed at least simultaneously upper of described light transmission supporting layer (A), wherein,
Described optics is adjusted layer (B) and is contained zirconia, and thickness is 0.4～3 μ m, and,
Adopting in the membrane process XRD determining of carrying out, being derived near peak value zirconic 2 θ=28 ° is 0.1～1.0 with the ratio of peak value of (222) face that is derived from tin indium oxide.
2. light transmission conductive film as claimed in claim 1, wherein,
Described optics adjust layer (B) with the average surface roughness Ra of face light transmission supporting layer (A) opposition side be 0.4～2.0nm.
3. light transmission conductive film as claimed in claim 1 or 2, wherein,
Described zirconic average grain diameter is 10～40nm.
4. the light transmission conductive film as described in any one in claim 1～3, wherein,
The average grain diameter of described tin indium oxide is 3.0～8.0nm.
5. the light transmission conductive film as described in any one in claim 1～4, wherein,
Described light transmission conductive layer (C) can obtain the layer heating that contains tin indium oxide at 90～160 DEG C in atmosphere for 10～120 minutes.
6. a touch panel, it comprises the light transmission conductive film described in any one in claim 1～5.
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| JP2012-267511 | 2012-12-06 | ||
| PCT/JP2013/058337 WO2013141374A1 (en) | 2012-03-23 | 2013-03-22 | Light-transmitting electroconductive film, method for producing same, and use therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535597A (en) * | 2014-12-15 | 2015-04-22 | 惠州Tcl移动通信有限公司 | Touch screen coating detection method and device |
| CN105719733A (en) * | 2014-10-20 | 2016-06-29 | 远东新世纪股份有限公司 | Conductive transparent laminated body, patterned conductive transparent laminated body and touch panel |
| CN106062888A (en) * | 2014-12-22 | 2016-10-26 | 日东电工株式会社 | Transparent conductive film |
| CN107000410A (en) * | 2015-03-20 | 2017-08-01 | 积水化学工业株式会社 | Transparent conductive film and the touch panel with it |
| TWI797421B (en) * | 2020-02-08 | 2023-04-01 | 大陸商業成科技（成都）有限公司 | A stacking structure for improving visual effect of single-layer touch sensing device and touch panel using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5564145B1 (en) * | 2013-06-21 | 2014-07-30 | 積水化学工業株式会社 | Light transmissive conductive film, method for producing the same, and use thereof |
| JP2015099580A (en) * | 2013-10-17 | 2015-05-28 | 日東電工株式会社 | Method for manufacturing position sensor and position sensor obtained by the method |
| JP6422676B2 (en) * | 2014-06-04 | 2018-11-14 | 日東電工株式会社 | Transparent conductive film |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2013141374A1 (en) | 2013-09-26 |
| KR20140075816A (en) | 2014-06-19 |
| JP5425351B1 (en) | 2014-02-26 |
| JP2014132440A (en) | 2014-07-17 |
| TW201340122A (en) | 2013-10-01 |
| CN103858182B (en) | 2015-06-03 |
| TWI447744B (en) | 2014-08-01 |
| JPWO2013141374A1 (en) | 2015-08-03 |
| KR101454148B1 (en) | 2014-10-22 |
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