CN103856201A - Discrete quantity high-voltage port processing method and circuit - Google Patents
Discrete quantity high-voltage port processing method and circuit Download PDFInfo
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- CN103856201A CN103856201A CN201310647714.7A CN201310647714A CN103856201A CN 103856201 A CN103856201 A CN 103856201A CN 201310647714 A CN201310647714 A CN 201310647714A CN 103856201 A CN103856201 A CN 103856201A
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Abstract
The invention provides a discrete quantity high-voltage port processing method and circuit. The discrete quantity high-voltage port processing circuit is characterized in that high-voltage resistance and open circuit identification of a port and effective isolation of the port to a power source are achieved through a high-voltage resistant device. According to the discrete quantity high-voltage port processing method and circuit, due to the method that the potential of the port is increased through the high-voltage resistant device, the technical problem that the level of a discrete quantity open circuit can not be easily identified is solved, and the identifiable level of the discrete quantity open circuit, isolation between the port and the power source and high-voltage resistance of the port are achieved; high voltage resistance of the port, open circuit identification and effective isolation of the port to the power source are achieved through the high-voltage resistant device, the discrete quantity surging phenomenon can be accordingly prevented, and the discrete quantity high-voltage port processing method and circuit can be widely applied to systems with discrete quantity conversion.
Description
Technical field
The invention belongs to as design of electronic circuits technology, relate in particular to a kind of high pressure port processing method and circuit of discrete magnitude.
Background technology
Discrete magnitude signal enters after chip, all needs port processing, generally all adopts the mode of electric resistance partial pressure, and the discrete magnitude of high pressure is reduced in proportion, is reduced to chip device and can bears in voltage range, and this kind of method determines there is very much effect to discrete magnitude voltage.But in the time that discrete magnitude signal shows as open circuit, its performance characteristic at port is different and different with external circuit, for rear class processing brings constant.And general discrete amount signal highest order 28V, many chips design on this voltage basis, and according to really there is the present of 50V in real work, chip port voltage endurance capability is challenged.
Summary of the invention
The invention provides a kind of high pressure port processing method and circuit of discrete magnitude, high pressure resistant, open circuit identification and port that this circuit is realized port by high pressure resistant device are effectively isolated power supply.
Concrete technical solution of the present invention is:
A high pressure port processing method for discrete magnitude, is characterized in that, comprises the following steps:
1] in the time that discrete magnitude signal is normally exported, the high-voltage signal of the high pressure port output to discrete magnitude carries out voltage division processing, and the discrete magnitude signal of exporting after dividing potential drop should be less than the maximum load that power supply can bear; In the time that discrete magnitude signal is open circuit, enter step 2 to process;
2] discrete magnitude signal is direct and isolated from power.
Above-mentioned discrete magnitude signal and power supply are by adopting the withstand voltage module isolation of inner back biased diode.
A high pressure port treatment circuit for discrete magnitude, comprises division module, it is characterized in that: also comprise withstand voltage module, described withstand voltage module one end is connected with power supply, the other end is connected with division module one end, division module other end ground connection, and discrete magnitude high pressure port is connected with power supply by withstand voltage module.
Above-mentioned withstand voltage module comprises back biased diode, for provide bias current in the time that discrete magnitude is opened a way, makes port have fixed level.
In above-mentioned withstand voltage module, connect can withstand voltage 50V diode, the diode P utmost point is connected to power supply vdd terminal, the diode N utmost point is connected to output port.
Advantage of the present invention is as follows:
High pressure port processing method and the circuit of discrete magnitude provided by the invention, by high pressure resistant device by the method for drawing on port current potential, solved discrete magnitude open circuit level technical problem not easy to identify, having realized discrete magnitude open circuit level can identification, port and isolated from power and port high pressure resistant.
High pressure resistant, open circuit identification and port that the present invention realizes port by high pressure resistant device are effectively isolated power supply, thereby surge phenomenon that can anti-discrete magnitude can be widely used in having in the system of discrete magnitude conversion.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the high pressure port treatment circuit of discrete magnitude of the present invention.
embodiment
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is explained clearly and completely.Obviously; the embodiment explaining is only the present invention's part embodiment, rather than whole embodiment, based on the embodiment in the present invention; those skilled in the art, at the every other embodiment that does not make creative work prerequisite and obtain, belong to protection scope of the present invention.
The principle of institute of the present invention foundation is as follows:
First, select technique; Selection can high voltage bearing technique, the withstand voltage device that is at least 50V, for example resistance, electric capacity and metal oxide field-effect transistor.
Secondly, division module voltage ratio is set; The device withstand voltage value that uses according to chip is selected division module voltage ratio, by discrete magnitude signal in proportion dividing potential drop be low level;
Be specially, the device withstand voltage value that uses according to chip is selected division module voltage ratio, by discrete magnitude signal in proportion dividing potential drop be low level, meet the requirement of chip internal operating circuit; Device in division module needs to bear high pressure.In reality, with reference to the required normal working voltage scope of chip internal circuit and the highest 50V voltage standard design of discrete magnitude voltage ratio, while making discrete magnitude be ceiling voltage, chip internal circuit also can normally be worked.
Again, select the withstand voltage device of withstand voltage module, withstand voltage module has adopted the mode of internal pull-up resistor, and described withstand voltage device is by discrete magnitude and isolated from power.
In practical application, the supply power voltage of common chip is well below the maximum voltage of discrete magnitude, should select appropriate device by discrete magnitude and isolated from power at this, withstand voltage module has adopted the mode of back biased diode, in the time that discrete magnitude is open circuit, can determine port voltage by the dividing potential drop of back biased diode, division module and peripheral circuit three in withstand voltage module.When discrete magnitude is fixed level, while being especially high voltage level, because its voltage is far away higher than supply voltage VDD, now because diode is reverse-biased, and its withstand voltage most 50V, the isolation of port and power supply while having guaranteed high pressure.
The high pressure port processing method of discrete magnitude provided by the invention, owing to having adopted the mode of back biased diode, by high pressure resistant device by the method for drawing on port current potential, solved discrete magnitude open circuit level technical problem not easy to identify, having realized discrete magnitude open circuit level can identification, port and isolated from power and port high pressure resistant.The high pressure port processing method of discrete magnitude of the present invention, realizes high pressure resistant, open circuit identification and the port of port power supply is effectively isolated by high pressure resistant device, thereby surge phenomenon that can anti-discrete magnitude can be widely used in having in the system of discrete magnitude conversion.
Preferably, described step 1 is, selects chip technology, and described technique can provide the resistance, electric capacity and the metal oxide field-effect transistor that meet the requirement of discrete magnitude maximum voltage.
Preferably, described withstand voltage module has adopted the mode of back biased diode, in the time that discrete magnitude is open circuit, can determine port voltage by back biased diode, division module and peripheral circuit three dividing potential drop in withstand voltage module.
The invention provides a kind of high pressure port treatment circuit of discrete magnitude, as shown in Figure 1, Fig. 1 is the structured flowchart of the high pressure port treatment circuit of discrete magnitude of the present invention.This discrete magnitude high pressure port treatment circuit comprises: division module and withstand voltage module, and wherein, described division module, for realizing a point compression functions; Device in described division module can bear high pressure; Described withstand voltage module, for isolate discrete amount signal and power supply.
Division module, for by discrete magnitude signal in proportion dividing potential drop be low level, meet the requirement of chip internal operating circuit; Device in division module needs to bear high pressure.
Withstand voltage module, for by discrete magnitude signal and isolated from power, in the time that discrete magnitude is opened a way, back biased diode can provide faint bias current simultaneously, makes port have fixed level.
The high pressure port treatment circuit of the discrete magnitude of the present embodiment is the specific implementation of said method embodiment, has the implementation procedure identical with said method embodiment and technique effect, does not repeat them here.
Preferably, in described withstand voltage module, connect can withstand voltage 50V diode, the diode P utmost point is connected to vdd terminal, the diode N utmost point is connected to port.
Be specially, withstand voltage module has adopted the mode of back biased diode, in the time that discrete magnitude is open circuit, can jointly determine port voltage by this back biased diode, division module and peripheral circuit.When discrete magnitude is fixed level, while being especially high voltage level, because its voltage is far away higher than supply voltage VDD, now because diode is reverse-biased, and its withstand voltage most 50V, the isolation of port and power supply while having guaranteed high pressure.
Finally it should be noted that above embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (5)
1. a high pressure port processing method for discrete magnitude, is characterized in that, comprises the following steps:
1] in the time that discrete magnitude signal is normally inputted, the high-voltage signal of the high pressure port input to discrete magnitude carries out voltage division processing, and the discrete magnitude signal of exporting after dividing potential drop should be less than the maximum load that power supply can bear; In the time that discrete magnitude signal is open circuit, enter step 2 to process;
2] discrete magnitude signal is direct and isolated from power.
2. the high pressure port processing method of discrete magnitude according to claim 1, is characterized in that, described discrete magnitude signal and power supply are by adopting the withstand voltage module isolation of inner back biased diode.
3. the high pressure port treatment circuit of a discrete magnitude, comprise division module, it is characterized in that: also comprise withstand voltage module, described withstand voltage module one end is connected with power supply, the other end is connected with division module one end, division module other end ground connection, discrete magnitude high pressure port is connected with power supply by withstand voltage module.
4. the high pressure port treatment circuit of discrete magnitude according to claim 3, is characterized in that: described withstand voltage module comprises back biased diode, for provide bias current in the time that discrete magnitude is opened a way, makes port have fixed level.
5. the high pressure port treatment circuit of discrete magnitude according to claim 4, is characterized in that: in described withstand voltage module, connect can withstand voltage 50V diode, the diode P utmost point is connected to power supply vdd terminal, the diode N utmost point is connected to output port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310647714.7A CN103856201A (en) | 2013-12-04 | 2013-12-04 | Discrete quantity high-voltage port processing method and circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310647714.7A CN103856201A (en) | 2013-12-04 | 2013-12-04 | Discrete quantity high-voltage port processing method and circuit |
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| CN103856201A true CN103856201A (en) | 2014-06-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112904122A (en) * | 2021-01-22 | 2021-06-04 | 维沃移动通信有限公司 | Insertion detection circuit and electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208979B2 (en) * | 2003-12-15 | 2007-04-24 | Kabushiki Kaisha Toshiba | Signal level conversion circuit |
| CN101242180A (en) * | 2008-03-14 | 2008-08-13 | 威盛电子股份有限公司 | Voltage level conversion circuit and voltage level conversion method |
| CN101247695A (en) * | 2008-03-03 | 2008-08-20 | 大连交通大学 | Filament open-circuit protector for constant-current light modulation system of air station navigation light |
| CN201522624U (en) * | 2008-07-28 | 2010-07-07 | 刘少华 | Inverse different dimension routine multi-range control circuit |
-
2013
- 2013-12-04 CN CN201310647714.7A patent/CN103856201A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208979B2 (en) * | 2003-12-15 | 2007-04-24 | Kabushiki Kaisha Toshiba | Signal level conversion circuit |
| CN101247695A (en) * | 2008-03-03 | 2008-08-20 | 大连交通大学 | Filament open-circuit protector for constant-current light modulation system of air station navigation light |
| CN101242180A (en) * | 2008-03-14 | 2008-08-13 | 威盛电子股份有限公司 | Voltage level conversion circuit and voltage level conversion method |
| CN201522624U (en) * | 2008-07-28 | 2010-07-07 | 刘少华 | Inverse different dimension routine multi-range control circuit |
Non-Patent Citations (2)
| Title |
|---|
| 田泽: "《航空专用集成电路》", 30 September 2013, 航空工业出版社 * |
| 高睿华灯: "《某设备内部环境温度控制系统的实现》", 《航空计算技术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112904122A (en) * | 2021-01-22 | 2021-06-04 | 维沃移动通信有限公司 | Insertion detection circuit and electronic device |
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