CN103855258A - LED wafer manufacturing method and LED - Google Patents
LED wafer manufacturing method and LED Download PDFInfo
- Publication number
- CN103855258A CN103855258A CN201410038276.9A CN201410038276A CN103855258A CN 103855258 A CN103855258 A CN 103855258A CN 201410038276 A CN201410038276 A CN 201410038276A CN 103855258 A CN103855258 A CN 103855258A
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- China
- Prior art keywords
- led
- fluorescent glue
- led chip
- platform
- electric conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- 239000000463 material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000013517 stratification Methods 0.000 description 4
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004643 material aging Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED wafer manufacturing method and an LED. The LED wafer manufacturing method and the LED are suitable for the technical field of LED packaging. The method includes the following steps that a plurality of LED chips are acquired, and conductors are welded to electrodes located on the upper surfaces of the LED chips respectively; the LED chips are positioned to the same platform, and fluorescent adhesives are applied to the platform, wherein the LED chips are coated with the fluorescent adhesives; after the fluorescent adhesives are flattened and solidified, the fluorescent adhesives located on the upper surfaces of the conductors are removed to make the upper surfaces of the conductors exposed, and LED wafers are acquired after cutting. The fluorescent adhesives with the same concentration and thickness can be applied to the LED chips at the same time, and therefore color zones of light emitted by the LED wafers are uniform.
Description
Technical field
The invention belongs to LED encapsulation technology field, relate in particular to a kind of LED wafer preparation method and LED.
Background technology
The packaged type of white light LEDs product is that the mode of LED wafer is bonding by crystal-bonding adhesive or eutectic welding is fixed on support, adopt gold thread the positive pole of wafer to be connected in to the positive pole of support, the negative pole of wafer is connected in the negative pole of support, then fills the fluorescent glue (mixture of fluorescent material and packaging plastic) that meets aim colour district in support bowl cup.The scheme of filling fluorescent glue need be for the operation of single bowl cup, inefficiency; Need a large amount of spot gluing equipments to drop into, and material waste is serious, fluorescent material and packaging plastic water use efficiency are low; Simultaneously because the bowl cup degree of depth is darker, cause photon more serious in problems such as the scattering absorptions of phosphor powder layer, affect the light extraction efficiency of LED packaging.In addition, because fluorescent material can precipitate in the fluorescent glue of its mixing, fluorescent material amount in a certain amount of fluorescent glue of pointing out before and after causing is inconsistent and cause white light LED part look district consistency poor, and then causes the yield of encapsulation to be difficult to control.
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of LED wafer preparation method, and the photochromic district consistency of sending through the made LED wafer of the method is good.
The embodiment of the present invention is achieved in that a kind of LED wafer preparation method, comprises the following steps:
Obtain multiple LED chips, be located thereon surperficial electrode welding electric conductor at each LED chip respectively;
Each LED chip is positioned to identical platform, and lays the fluorescent glue that covers each LED chip on this platform;
Make described fluorescent glue smooth, solidify after, remove the fluorescent glue that is positioned at each electric conductor upper surface and make it to expose, then cut out each LED wafer.
Another object of the embodiment of the present invention is to provide a kind of LED, and the LED wafer that described LED comprises LED support and is made up of said method, connects the electrode on described electric conductor and LED support by wire.
The embodiment of the present invention is first obtained multiple LED chips, is located thereon surperficial electrode welding electric conductor respectively at each LED chip; Then, each LED chip is positioned to identical platform, and lays the fluorescent glue that covers each LED chip on this platform; After making described fluorescent glue smooth, curing, remove the fluorescent glue that is positioned at each electric conductor upper surface, then cut out each LED wafer.Multiple LED chips are applied by described fluorescent glue at this simultaneously, make each LED chip be enclosed and cover by concentration, fluorescent glue that thickness is identical, the photochromic district consistency that made LED wafer sends is good.
Brief description of the drawings
Fig. 1 is the LED wafer preparation method's that provides of the embodiment of the present invention realization flow figure;
Fig. 2 is the structural representation after the horizontal structure wafer welding gold ball that provides of the embodiment of the present invention;
Fig. 3 is the structural representation after the vertical stratification wafer welding gold ball that provides of the embodiment of the present invention;
The horizontal structure wafer that is welded with gold goal is placed in the state diagram after workbench by Fig. 4;
Fig. 5 is the state diagram that applies fluorescent glue in workbench shown in Fig. 4;
Fig. 6 is the state diagram that removes the fluorescent glue that is positioned at gold goal upper surface;
Fig. 7 is Fig. 6 partial enlarged drawing;
Fig. 8 is the state diagram after fluorescence film is cut apart;
Fig. 9 is the structural representation of LED.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention is first obtained multiple LED chips, is located thereon surperficial electrode welding electric conductor respectively at each LED chip; Then, each LED chip is positioned to identical platform, and lays the fluorescent glue that covers each LED chip on this platform; After making described fluorescent glue smooth, curing, remove the fluorescent glue that is positioned at each electric conductor upper surface, then cut out each LED wafer.Multiple LED chips are applied by described fluorescent glue at this simultaneously, make each LED chip be enclosed and cover by concentration, fluorescent glue that thickness is identical, the photochromic district consistency that made LED wafer sends is good.
Fig. 1 shows the LED wafer preparation method's that the embodiment of the present invention provides realization flow, and details are as follows.
In step S101, obtain multiple LED chips, be located thereon surperficial electrode welding electric conductor at each LED chip respectively.
The embodiment of the present invention is first obtained multiple LED chips 1, is then located thereon surperficial electrode welding electric conductor at each LED chip 1 respectively.Wherein, described LED chip can be the positive cartridge chip of horizontal structure, can be also the positive cartridge chip of vertical stratification.Particularly, the upper surface of the positive cartridge chip of described horizontal structure is established two electrodes, and one of them is positive electrode, and another is negative electrode, in these two electrode places welding gold ball 3 respectively, as shown in Figure 2.The upper surface of the positive cartridge chip of described vertical stratification is only established an electrode, in this electrode place welding gold ball 3, as shown in Figure 3.
In step S102, each LED chip is positioned to identical platform, and lays the fluorescent glue that covers each LED chip on this platform.
The LED chip 1 that is welded with gold goal is positioned identical platform 4 by the embodiment of the present invention, and lay the fluorescent glue 5 that covers each LED chip 1 and gold goal 3 thereof on this platform 4, as shown in Figure 4,5.At this, to carrying out fluorescent glue coating in conplane multiple LED chips, efficiency is high, and fluorescent glue coating equipment drops into little, and fluorescent material utilance is high.Because fluorescent glue is applied to the flat coating of same time, do not exist because fluorescent material precipitation causes the poor problem of Se district consistency, light (as white light) the look district consistency that made LED wafer sends is good, and after LED wafer is made, spectrophotometric test can be carried out equally, control can be further segmented to product colour.
Wherein, described platform 4 is for having the workbench of micropore Incision Machine's.As shown in Figure 4, described workbench there are multiple micropores 40, the cavity 41 that is connected with each micropore 40 and in order to seal the valve 42 of described cavity 41., make the lower surface of each LED chip 1 be close to the upper surface of described workbench when the location.Micropore 40 on described workbench vacuumizes operation by vacuum extractor to described cavity 41 after all being covered by LED chip 1, thereby makes each LED chip 1 be adsorbed on described workbench.Then, on this workbench, lay the fluorescent glue 5 that covers each LED chip 1.Carry out fluorescent glue coating at the workbench having by vacuum suction fixed wafer function, process is simple, is easy to realize.
In step S103, make described fluorescent glue smooth, solidify after, remove the fluorescent glue that is positioned at each electric conductor upper surface and make it to expose, then cut out each LED wafer.
The embodiment of the present invention first makes the upper surface of described fluorescent glue 5 smooth by natural levelling, centrifugal rotation or formed in mould mode.After described fluorescent glue 5 solidifies, remove the fluorescent glue that is positioned at each gold goal 3 upper surfaces and make it to expose, then cut out each LED wafer 6, as shown in Fig. 6～8.Method (as etching) at this by physics or chemistry removes the fluorescent glue that is positioned at each gold goal 3 upper surfaces, so that wire 8 connects the electrode on described gold goal 3 and LED support 9, as shown in Figure 9.
Particularly, first fluorescence film 7(is contained to LED chip 1) shift out from workbench, adopt the mode of physical break to cut apart fluorescence film, the fluorescent glue that makes single LEDs wafer all have same thickness encloses and covers, photochromic consistency.Meanwhile, electrode is drawn fluorescent adhesive layer 5 via gold goal 3, can carry out normal bonding wire (as gold thread) operation, and (as white light) horizontal structure wafer or vertical stratification wafer that can bonding wire complete.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. a LED wafer preparation method, is characterized in that, said method comprising the steps of:
Obtain multiple LED chips, be located thereon surperficial electrode welding electric conductor at each LED chip respectively;
Each LED chip is positioned to identical platform, and lays the fluorescent glue that covers each LED chip on this platform;
Make described fluorescent glue smooth, solidify after, remove the fluorescent glue that is positioned at each electric conductor upper surface and make it to expose, then cut out each LED wafer.
2. the method for claim 1, is characterized in that, described electric conductor is gold goal, and described platform is the workbench with micropore Incision Machine's.
3. method as claimed in claim 1 or 2, it is characterized in that, the cavity that described workbench has multiple micropores, be connected with each micropore and in order to seal the valve of described cavity, each LED chip covers after described micropore, by vacuum extractor, described cavity is vacuumized to operation, make each LED chip be positioned described workbench.
4. a LED, is characterized in that, the LED wafer that comprises LED support and be made up of method described in any one in claim 1～3, connects the electrode on described electric conductor and LED support by wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038276.9A CN103855258A (en) | 2014-01-26 | 2014-01-26 | LED wafer manufacturing method and LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038276.9A CN103855258A (en) | 2014-01-26 | 2014-01-26 | LED wafer manufacturing method and LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103855258A true CN103855258A (en) | 2014-06-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410038276.9A Pending CN103855258A (en) | 2014-01-26 | 2014-01-26 | LED wafer manufacturing method and LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103855258A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459664A (en) * | 2019-07-31 | 2019-11-15 | 厦门多彩光电子科技有限公司 | A kind of packaging method of laminated devices quantum dot LED lamp bead |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030093369A (en) * | 2002-05-29 | 2003-12-11 | 서울반도체 주식회사 | White Light Emitting Diode and Methode for Manufacturing the same |
| CN101996959A (en) * | 2009-08-17 | 2011-03-30 | 宏齐科技股份有限公司 | Chip encapsulation structure capable of realizing electrical connection without routing and manufacture method thereof |
| CN102263184A (en) * | 2009-12-30 | 2011-11-30 | 宝霖科技股份有限公司 | Light emitting diode manufacturing method and structure thereof |
| CN202549911U (en) * | 2012-04-18 | 2012-11-21 | 吴晓 | LED (Light-Emitting Diode) chip carrier positioning adsorption device |
-
2014
- 2014-01-26 CN CN201410038276.9A patent/CN103855258A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030093369A (en) * | 2002-05-29 | 2003-12-11 | 서울반도체 주식회사 | White Light Emitting Diode and Methode for Manufacturing the same |
| CN101996959A (en) * | 2009-08-17 | 2011-03-30 | 宏齐科技股份有限公司 | Chip encapsulation structure capable of realizing electrical connection without routing and manufacture method thereof |
| CN102263184A (en) * | 2009-12-30 | 2011-11-30 | 宝霖科技股份有限公司 | Light emitting diode manufacturing method and structure thereof |
| CN202549911U (en) * | 2012-04-18 | 2012-11-21 | 吴晓 | LED (Light-Emitting Diode) chip carrier positioning adsorption device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459664A (en) * | 2019-07-31 | 2019-11-15 | 厦门多彩光电子科技有限公司 | A kind of packaging method of laminated devices quantum dot LED lamp bead |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140611 |
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| RJ01 | Rejection of invention patent application after publication |