CN103847033A - Scribing jig for brittle material substrate, scribing method and dividing method - Google Patents
Scribing jig for brittle material substrate, scribing method and dividing method Download PDFInfo
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- CN103847033A CN103847033A CN201310441417.7A CN201310441417A CN103847033A CN 103847033 A CN103847033 A CN 103847033A CN 201310441417 A CN201310441417 A CN 201310441417A CN 103847033 A CN103847033 A CN 103847033A
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- delineation
- brittle substrate
- tool
- scribing
- functional
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention relates to a scribing method for a brittle material substrate capable of scribing the brittle material substrate provided with functional areas arrayed in longitudinal or transverse directions without damaging the functional areas. The scribing method is achieved in that the flat-plate-shaped scribing jig (20) is used for scribing the brittle material substrate, namely a semiconductor wafer (10); the center of a grid -shaped area, having the same spacing distance as a scribing pre-determined line of the semiconductor wafer (10), of the scribing jig (20) is provided with protecting holes (21); the functional areas of the semiconductor wafer (10) and the protecting holes (21) of the jig (20) are positioned and in contact in a corresponding way; and scribing operation is carried out along the scribing pre-determined line. Accordingly, due to the fact that the functional areas (11) during scribing operation are not in direct contact with the scribing jig (20), the semiconductor wafer (10) is scribed without damaging the functional areas.
Description
Technical field
The present invention is about to brittle substrates such as semiconductor crystal wafers, and there is the substrate of arranging the multiple functional areas (also claiming element area) that form in longitudinal direction and transverse direction, tool, rose method and method for dividing for delineation while delineation with regard to every functional area.
Background technology
Semiconductor chip, is by the element area that is formed at semiconductor crystal wafer, carries out disjunction and manufactures at the boundary position in its region.Known, wafer is being divided to the situation that is broken into chip, be to make cutting blade rotation by cutting (die singulation) device, and by cutting, semiconductor crystal wafer cut into small pieces.
But in the situation that uses cutter sweep; the water of discharging for the discharge bits that cutting is caused is essential, and for this water or discharge bits not to the performance of semiconductor chip cause dysgenic mode to semiconductor chip impose protection, by water or discharge and consider the clean step of cleaning to be worth doing and necessitate.Therefore have the shortcoming that step complicates, cannot reduce costs or shorten process time.In addition, because the cutting that uses cutting blade produces the problems such as film peels off, defect generation.In addition,, in the MEMS substrate with small mechanical realization, because the surface tension of water will cause the destruction of structure, therefore produced the problem that water cannot be made and cannot carry out by cutting disjunction.
In patent documentation 1, mention along delineation preset lines semiconductor crystal wafer has been delineated, and carried out the substrate brisement device of brisement by brisement with device.In the semiconductor crystal wafer of object that becomes brisement, arrange ground and be formed with multiple functional areas.In the situation of carrying out disjunction, first, semiconductor crystal wafer between functional area across uniformly-spaced forming delineation line in longitudinal direction and transverse direction.Afterwards, using the face that is formed with delineation line as below and to be disposed at bed plate (bed knife) upper, blade is pressed down and brisement whereby along delineation line directly over the substrate delineated.
But, in the situation that the brittle substrates such as semiconductor crystal wafer are delineated, be not only required to delineate from its back side and make afterwards substrate reversion and the situation of carrying out brisement from being formed with the face of functional area, also having.Fig. 1 (a), is illustrated in so situation and delineates previous mounting in the profile of the semiconductor crystal wafer of scoring device.As shown in this figure, in the situation of delineating from the substrate-side of semiconductor crystal wafer 101, among functional surfaces 102 on semiconductor crystal wafer 101, functional area 102a, between 102b, form delineation when line, the functional surfaces that makes to have functional area contacts with absorption platform 103 and keeps semiconductor crystal wafer 101.But, once delineation break bar 104 is given set load and it is rotated, having functional area 102a, 102b exerts pressure and causes the problem of damage.
In addition, as shown in Fig. 1 (b), functional surfaces be attached to cutting of web 105 and be disposed at the situation on absorption platform 103, have not only and exert pressure in the time of delineation, also in the time peelling off from cutting of web 105, may the functional area on semiconductor crystal wafer cause the problem of damage.
Patent documentation 1: TOHKEMY 2004-39931 communique
Summary of the invention
The object of the present invention is to provide a kind of tool, the rose method that uses it and method for dividing for delineation for semiconductor crystal wafer being delineated in the mode that the functional area of semiconductor crystal wafer is not applied to power.
The object of the invention to solve the technical problems realizes by the following technical solutions.The rose method of brittle substrate of the present invention, that one side is had to the functional surfaces of arranging the multiple functional areas that form in longitudinal direction and transverse direction, and another side is the rose method that the brittle substrate of real estate is delineated, it is to use be formed with each the center in the cancellate delineation preset lines of the real estate of this brittle substrate cancellate region that is uniform distances the flat delineation tool that this functional area is large protection hole, the mode that is contained in the protection hole of this delineation tool with the functional area of this brittle substrate makes the functional surfaces of brittle substrate contact with this delineation tool, and from the real estate of this brittle substrate, be clathrate along this delineation preset lines and form delineation line.
The object of the invention to solve the technical problems also realizes by the following technical solutions.Delineation tool of the present invention; one side to be had to arrange the functional surfaces of the multiple functional areas that form and another side in longitudinal direction and transverse direction be the delineation tool that the brittle substrate of real estate is delineated; and be tabular, each this functional area of center with region that to be arranged on the cancellate delineation preset lines of this brittle substrate be uniform distances is large protection hole.
Also can further there are multiple maintenance tools that the mode that is contained in this each protection hole with the functional area of the functional surfaces of this brittle substrate keeps this brittle substrate herein.
The object of the invention to solve the technical problems realizes again by the following technical solutions.The method for dividing of brittle substrate of the present invention, that one side is had to the functional surfaces of arranging the multiple functional areas that form in longitudinal direction and transverse direction, and another side is that the brittle substrate of real estate is delineated, the method for dividing of disjunction, and use and be formed with each the center in the cancellate delineation preset lines of the real estate of this brittle substrate cancellate region that is uniform distances the flat delineation tool that this functional area is large protection hole, the mode that is contained in the protection hole of this delineation tool with the functional area of this brittle substrate makes the functional surfaces of brittle substrate contact with this delineation tool, and from the real estate of this brittle substrate, be clathrate along this delineation preset lines and form delineation line, make this reversion of brittle substrate through delineation, carry out brisement and carry out whereby disjunction along formed delineation line.
By technique scheme; tool, rose method and the method for dividing for delineation of brittle substrate of the present invention at least have following advantages and beneficial effect: according to the present invention with feature like this; owing to making its location and delineating by the protection hole of the tool mode corresponding with the functional area of brittle substrate with delineation, therefore also in the time of delineation, functional area does not contact with tool or platform.Therefore, can, in the situation that functional area does not damage, brittle substrate be delineated along delineation line.In addition, make the brittle substrate of delineating in such a manner reverse and carry out brisement, can in the situation that not damaging functional surfaces, carry out whereby disjunction.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of description, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Brief description of the drawings
Fig. 1 (a) and Fig. 1 (b): the profile of the state while representing the delineation of known semiconductor crystal wafer.
Fig. 2 (a) and Fig. 2 (b): an example graphic that represents the semiconductor crystal wafer that becomes delineation object of embodiments of the invention.
Fig. 3 (a) and Fig. 3 (b): represent embodiments of the invention the delineation tool using in when delineation front view and amplify the profile of the part A of some chain lines.
Fig. 4: represent to make semiconductor substrate to be positioned the front view of the state of delineation tool.
Fig. 5: represent to use in this embodiment the profile of delineating the state of semiconductor crystal wafer being delineated with tool.
[main element symbol description]
10: semiconductor crystal wafer 10A: functional surfaces
10B: real estate 11: functional area
Sx1～Sxm, Sy1～Syn: delineation preset lines 20: delineation tool
21: protection hole 22-1～22-4: keep tool
30: platform 31: delineation break bar
Detailed description of the invention
Technological means and effect of taking for reaching predetermined goal of the invention for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to detailed description of the invention, structure, feature and effect thereof of tool, rose method and method for dividing for delineation of a kind of brittle substrate proposing according to the present invention, be described in detail as follows.
Then, describe for embodiments of the invention.In the semiconductor of this embodiment, the substrate that becomes brisement object is made as to silicon semiconductor wafer.Fig. 2 (a) represents the functional surfaces of the silicon semiconductor wafer 10 of circular, and Fig. 2 (b) represents that its back side is the face of substrate-side.In the manufacturing step of semiconductor crystal wafer 10, at functional surfaces 10A, become in length and breadth row and be clathrate and be formed with multiple functional areas 11 along the line parallel with X-axis, Y-axis.This functional area 11, generally uniformly-spaced arranges every individual with certain spacing, for example, be incorporated with the MEMS functional area of mechanical composed component, inductor, actuator etc.And, carry out disjunction and become semiconductor chip with regard to each functional area, therefore as shown in Fig. 2 (b), face 10B in the substrate-side that is not formed with functional area represents with some chain lines, form delineation preset lines Sy1～Syn by scoring device in longitudinal direction, form delineation preset lines Sx1～Sxm in transverse direction.Described delineation preset lines is clathrate, and therebetween forms multiple rectangular regions.And, dispose respectively functional area 11 in functional surfaces 10A side in the central authorities in this rectangular region.
In the present embodiment, in the time that being delineated, semiconductor crystal wafer 10 uses delineation tool 20.This is tool 20 for delineation, as the amplification profile in the region that represents front view in Fig. 3 (a), represent with A in Fig. 3 (b), is the metal tool processed of foursquare flat board, for example, thickness is set as to several mm left and right.This tool 20, in the position corresponding with the region of the each functional area that comprises semiconductor crystal wafer 10, makes in length and breadth it arrange along the line of x direction and y direction and is formed with multiple rectangular protections hole 21.This protection hole 21, in order the functional area 11 of semiconductor crystal wafer 10 not to be applied to power in the time delineating, is large, is made as through hole herein and set for compared with functional area 11.
In addition,, as shown in Fig. 3 (a), in the one side of tool 20, be provided with the maintenance tool of the fixing use of substrate in 4 positions along its limit around.Keep tool 22-1～22-4, as shown in Figure 4, in the time that tool 20 is provided with semiconductor crystal wafer 10, keep surrounding the location of semiconductor crystal wafer 10, and maintenance tool in order to not make semiconductor crystal wafer 10 move.Keeping tool 22-1～22-4, as shown in Fig. 3 (b), can section be also L font, in addition, also can form by having flexible member.
In addition, in the situation that uses delineation with tool 20, semiconductor crystal wafer 10 to be delineated, delineation is disposed on the platform of not shown scoring device with tool 20.And, as shown in Figure 4, the functional surfaces 10A of semiconductor crystal wafer 10, to load by the mode that tool 20 contacts with delineation, and is fully contained in to the mode of delineating with the protection hole 21 of tool 20 with the functional area 11 of semiconductor crystal wafer 10 and positions.And by keeping tool 22-1～22-4, semiconductor crystal wafer 10 correctly positions in unshift mode.Fig. 5 is the profile while configuring in such a manner, and all functional areas 11 become the position corresponding with protection hole 21, makes directly not contact with delineation tool 20.The platform of scoring device also can be general platform, in addition, also can be the absorption platform that keeps tool or semiconductor crystal wafer by attracting air.
So; after positioning; once making to delineate break bar 31 by scoring device in real estate 10B rotates and delineates; as shown in Figure 5; though semiconductor crystal wafer 10 is applied to load; but owing to being provided with protection hole 21 in the part corresponding with functional area 11, therefore functional area 11 does not also have the situation that produces damage in the time of delineation.So, by semiconductor crystal wafer 10 along delineation preset lines Sx1～Sxm, Sy1～Syn delineates, and can form delineation line.
Then, semiconductor crystal wafer 10 is reversed, carry out brisement by not shown brisement device along all delineation lines.Accordingly, can disjunction become to comprise respectively multiple MEMS chips of functional area.
In addition; in this embodiment; protect the functional area 11 of semiconductor crystal wafer though multiple protections hole 21 of tool 20 can be set as to through hole; if but the functional area 11 of semiconductor crystal wafer 10 does not directly contact with tool 20 in the time of delineation; therefore also can be non-through hole, and be set as the hole of any degree of depth.
In addition, in this embodiment, be provided with the maintenance tool of L word shape with tool in delineation.But if the functional area of semiconductor crystal wafer correctly can be positioned to the protection hole of delineation tool and be kept, be not defined in this shape.In addition, platform is absorption platform, and can by attract air by protection hole clamping of semiconductor wafers giving under fixing situation positively, maintenance tool also can be set.In addition, even general platform, if after being positioned tool 20, to protect the maintenance semiconductor crystal wafers such as band around, also can not necessarily will arrange maintenance tool.
Further, in this embodiment, though describe for the silicon semiconductor wafer as substrate, the present invention also can be applicable to the various brittle substrates such as silicon carbide substrate (SiC substrate), sapphire substrate, ltcc substrate.
When the present invention delineates brittle substrate at the back side of the functional surfaces from should give protection, owing to delineating in the situation that not damaging functional area, therefore can produce effect very much and be applied to the scoring device of the substrate that is formed with functional area.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be the content that does not depart from technical solution of the present invention, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (4)
1. a rose method for brittle substrate, is one side to be had to arrange the functional surfaces of the multiple functional areas that form and another side in longitudinal direction and transverse direction be that the brittle substrate of real estate is delineated, and it is characterized in that:
Use and be formed with each the center in the cancellate delineation preset lines of the real estate of this brittle substrate cancellate region that is uniform distances the flat delineation tool that this functional area is large protection hole, the mode that is contained in the protection hole of this delineation tool with the functional area of this brittle substrate makes the functional surfaces of brittle substrate contact with this delineation tool;
From the real estate of this brittle substrate, be clathrate along this delineation preset lines and form delineation line.
2. a delineation tool, is one side to be had to arrange the functional surfaces of the multiple functional areas that form and another side in longitudinal direction and transverse direction be that the brittle substrate of real estate is delineated, and it is characterized in that:
This delineation tool is tabular, and each this functional area of center with region that to be arranged on the cancellate delineation preset lines of this brittle substrate be uniform distances is large protection hole.
3. delineation tool as claimed in claim 2, is characterized in that it further has multiple maintenance tools that the mode that is contained in this each protection hole with the functional area of the functional surfaces of this brittle substrate keeps this brittle substrate.
4. a method for dividing for brittle substrate, is one side to be had to arrange the functional surfaces of the multiple functional areas that form and another side in longitudinal direction and transverse direction be that the brittle substrate of real estate is delineated, disjunction, it is characterized in that:
Use and be formed with each the center in the cancellate delineation preset lines of the real estate of this brittle substrate cancellate region that is uniform distances the flat delineation tool that this functional area is large protection hole, the mode that is contained in the protection hole of this delineation tool with the functional area of this brittle substrate makes the functional surfaces of brittle substrate contact with this delineation tool;
From the real estate of this brittle substrate, be clathrate along this delineation preset lines and form delineation line;
Make this brittle substrate reversion of having delineated, carry out brisement and carry out whereby disjunction along formed delineation line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012261825A JP2014107518A (en) | 2012-11-30 | 2012-11-30 | Scribe tool, scribe method and cutting method of fragile material substrate |
| JP2012-261825 | 2012-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103847033A true CN103847033A (en) | 2014-06-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310441417.7A Pending CN103847033A (en) | 2012-11-30 | 2013-09-18 | Scribing jig for brittle material substrate, scribing method and dividing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014107518A (en) |
| KR (1) | KR20140070337A (en) |
| CN (1) | CN103847033A (en) |
| TW (1) | TWI592271B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2019082724A1 (en) * | 2017-10-27 | 2020-11-12 | 三星ダイヤモンド工業株式会社 | How to divide a substrate with a metal film |
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|---|---|---|---|---|
| JPS639950A (en) * | 1986-06-30 | 1988-01-16 | Nec Kansai Ltd | Method for separating semiconductor element |
| US20020025626A1 (en) * | 1998-05-05 | 2002-02-28 | Sunil Hattangady | Integrated dielectric and method |
| US20060143908A1 (en) * | 2004-12-22 | 2006-07-06 | Pierre-Luc Duchesne | An automated dicing tool for semiconductor substrate materials |
| CN101148244A (en) * | 2007-10-19 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer-class tool for sealing microcomputer electric system device and method |
| TW201013833A (en) * | 2008-09-26 | 2010-04-01 | Advanced Semiconductor Eng | Fixing jig of wire bonding machine and window type clamp thereof |
| CN202434491U (en) * | 2011-12-31 | 2012-09-12 | 刘胜 | Wafer bonding fixture with bumps |
| JP2012218962A (en) * | 2011-04-06 | 2012-11-12 | Mitsuboshi Diamond Industrial Co Ltd | Method for processing inner circumference of substrate of brittle material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5422759A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Handling method for semiconductor wafer |
| JP4581620B2 (en) * | 2004-10-15 | 2010-11-17 | 株式会社デンソー | Semiconductor device manufacturing jig and semiconductor device manufacturing method |
| JP2007095780A (en) * | 2005-09-27 | 2007-04-12 | Oki Electric Ind Co Ltd | Tool and method for manufacturing semiconductor device |
| JP4846411B2 (en) * | 2006-03-30 | 2011-12-28 | 株式会社ディスコ | Semiconductor package jig |
-
2012
- 2012-11-30 JP JP2012261825A patent/JP2014107518A/en active Pending
-
2013
- 2013-06-18 TW TW102121478A patent/TWI592271B/en not_active IP Right Cessation
- 2013-07-24 KR KR1020130087380A patent/KR20140070337A/en not_active Application Discontinuation
- 2013-09-18 CN CN201310441417.7A patent/CN103847033A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639950A (en) * | 1986-06-30 | 1988-01-16 | Nec Kansai Ltd | Method for separating semiconductor element |
| US20020025626A1 (en) * | 1998-05-05 | 2002-02-28 | Sunil Hattangady | Integrated dielectric and method |
| US20060143908A1 (en) * | 2004-12-22 | 2006-07-06 | Pierre-Luc Duchesne | An automated dicing tool for semiconductor substrate materials |
| CN101148244A (en) * | 2007-10-19 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer-class tool for sealing microcomputer electric system device and method |
| TW201013833A (en) * | 2008-09-26 | 2010-04-01 | Advanced Semiconductor Eng | Fixing jig of wire bonding machine and window type clamp thereof |
| JP2012218962A (en) * | 2011-04-06 | 2012-11-12 | Mitsuboshi Diamond Industrial Co Ltd | Method for processing inner circumference of substrate of brittle material |
| CN202434491U (en) * | 2011-12-31 | 2012-09-12 | 刘胜 | Wafer bonding fixture with bumps |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140070337A (en) | 2014-06-10 |
| TW201420298A (en) | 2014-06-01 |
| JP2014107518A (en) | 2014-06-09 |
| TWI592271B (en) | 2017-07-21 |
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Application publication date: 20140611 |
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