CN103839985B - The most parasitic PNP device in germanium silicium HBT technique and manufacture method - Google Patents
The most parasitic PNP device in germanium silicium HBT technique and manufacture method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 43
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000003071 parasitic effect Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 claims abstract description 23
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 44
- 150000002500 ions Chemical class 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 17
- 238000000407 epitaxy Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention discloses the most parasitic PNP device in a kind of germanium silicium HBT technique, there is the Resistance formed by emitter window medium and emitter-polysilicon, reduce base dissufion current, the isolation area formed by germanium silicon Windows media and germanium policrystalline silicon silicon between launch site and collecting zone, being formed base by N-type extension under isolation area, base has colelctor electrode sinking passage to connect.The most parasitic PNP device in germanium silicium HBT technique of the present invention, its top view is polygon, emitter stage is centrally formed polygon ring, reduce base current, make of germanium silicon dielectric layer between emitter and collector and isolate, improve emitter area and reduce base width, improve the direct methods multiple of device.The invention also discloses the method for manufacturing technology of described germanium silicium HBT device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, specifically refer to the most parasitic PNP device in a kind of germanium silicium HBT technique,
The invention still further relates to the manufacture method of described device.
Background technology
The conventional horizontal parastic PNP triode in germanium silicium HBT technique, its basic device architecture as it is shown in figure 1,
Being emitter stage by the highly doped annular active area 9 of a p-type, there is a polygonal region centre (between launch site 9
Region), above have dielectric layer 11 and polysilicon 8 to stop p-type ion implanting；Base stage is the epitaxial region of a N-type, under
There is n type buried layer 2 in face for low-resistance passage, and is connected to silicon face by the N-type electricity sinking passage 5 of outer ring；Colelctor electrode
It is that a p-type is lightly doped district 6；It is isolation by field oxygen 4 or shallow trench between launch site 9 and collecting zone 6.So formed
The launch site 9 of device is polygonal outer shroud, and its effective emitter area is that in Fig. 1, region 9 exceedes isolation from oxygen SiClx
Part, base is L-shaped, and such emitter area is less, and base is wider, and the two factor all can reduce from emitter stage
It is diffused into the electric current of colelctor electrode, direct current amplification H of such lateral PNPFECan be relatively low, typically below 25.But it is right
Some application, HFEMust be more than 50, the most intrinsic device application can be very limited.
Summary of the invention
The technical problem to be solved is to provide the most parasitic PNP device in a kind of germanium silicium HBT technique, with fall
Low base current, improves device direct current amplification or the cut-off frequency of device.
Another technical problem to be solved by this invention is to provide the most parasitic PNP device in described germanium silicium HBT technique
Manufacture method.
For solving the problems referred to above, the most parasitic PNP device in germanium silicium HBT technique of the present invention, structure is:
Launch site, is the heavily doped polygon ring of a p-type, on the depression angle of device in ring-shaped emission district
Between be that the polygon that formed by emitter-window medium and the polysilicon of germanium silicium HBT stops；
Base, is made up of the low-doped N-type epitaxy layer on n type buried layer, and is drawn by buried regions and base sinking passage；
Collecting zone, is made up of low-doped p-type ion implanted region and heavy doping draw-out area, and the silicon face above collecting zone covers
Lid metal silicide；
On N-type epitaxy layer surface, the epitaxial surface between launch site and collecting zone has dielectric layer and germanium and silicon epitaxial is made to isolate,
Isolate with shallow trench or field oxygen between collecting zone and base；The enclosing region in ring-shaped emission district and ring-shaped emission district covers germanium silicon
Extension, is coated with dielectric layer, polysilicon and metal silicide above the germanium and silicon epitaxial of ring-shaped emission district enclosing region successively；
Silicon face above base sinking passage covers polysilicon and metal silicide successively；On germanium and silicon epitaxial above launch site also
Cover metal silicide；
Whole device surface has inter-level dielectric, and each contact hole break-through inter-level dielectric respectively touches described base and sinks logical
Metal silicide on germanium and silicon epitaxial above road, collecting zone and launch site, by the parasitic base of PNP pipe, collecting zone with
And launch site extraction, form the described parasitic base stage of PNP pipe, colelctor electrode and emitter stage.
Further, the most parasitic described PNP device is concentric polygon on depression angle, preferably eight limits
Shape.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique of the present invention, comprises the steps:
1st step, forms heavily doped n type buried layer in P-type silicon substrate, and carries out high temperature and advance for a long time；
2nd step, grows lightly doped N-type epitaxy layer on n type buried layer；
3rd step, forms shallow trench or oxygen isolation area, field in N-type epitaxy layer；
4th step, ion implanting forms heavily doped N-type sinking electrical connecting passage and draws n type buried layer, and ion implanting shape
Become lightly doped p-type collecting zone, then carry out a high temperature and advance；
5th step, is one layer of silicon oxide and one layer at N-type epitaxial surface deposit germanium silicon Windows media, preferably dielectric material
Polysilicon, photoetching and dry etching open germanium silicon window, grow germanium silicon epitaxial layer, and the active area opened at window forms monocrystalline germanium
Silicon, other region then forms poly-SiGe；
6th step, photoetching and dry etching formed outside the launch site of laterally parasitic PNP and active area for connecting with contact hole
Lead-out area；
7th step, photoetching and dry etching form Resistance and the polysilicon of base at parasitic PNP emitter stage center；And in photoetching
Glue carries out the p-type ion implanting of low-yield high dose before removing；
8th step, rapid thermal annealing activates the foreign ion injected, then forms metal silicide, device surface deposit interlayer
Medium, and sequentially form contact hole and metal connecting line completes the connection to emitter stage, base stage and colelctor electrode.
Further, in described 1st step, the injection ion of n type buried layer is arsenic, and implantation dosage is 1015～1016cm-2, energy
Amount is 50～100keV；The temperature that described high temperature advances is at 1000～1150 DEG C, and the time was at 30～300 minutes.
Further, in described 2nd step, the dopant ion of N-type extension is phosphorus, and bulk concentration is 5 × 1015～2 × 1016cm-3。
Further, in described 4th step, the injection ion of N-type sinking electrical connecting passage is phosphorus, and implantation dosage is 1015~
1016cm-2, Implantation Energy is 50～100keV；It is boron that p-type is lightly doped ion implanting, and implantation dosage is 5 × 1012～5
×1013cm-2, Implantation Energy is 30～200keV；The temperature that high temperature advances is at 950～1050 DEG C, and the time is 30～60
Minute.
Further, in described 7th step, the p-type ion implanting of low-yield high dose is boron, and implantation dosage is 1 × 1015cm-2
Above, Implantation Energy is 5～35KeV.
Further, in described 8th step rta technique be temperature at 950～1100 DEG C, the time was at 10～60 seconds.
The most parasitic PNP device in germanium silicium HBT technique of the present invention, by being centrally formed at emitter stage with polygon
Ring, reduce the base dissufion current by launch site, between launch site and collecting zone, replace Chang Yang district with germanium silicon dielectric layer
As isolation, improve emitter area and reduce base width, i.e. adding collector current, improve described parasitic PNP
Direct current amplification H of deviceFE, also improve the cut-off frequency of device.
Accompanying drawing explanation
Fig. 1 is the profile of the most parasitic conventional PNP pipe；
Fig. 2～9 is manufacturing technology steps explanation of the present invention；
Figure 10 is the top view of device of the present invention；
Figure 11 is manufacturing process flow diagram of the present invention.
Description of reference numerals
1 is substrate, and 2 is buried regions, and 3 is N-type extension, and 4 is an oxygen, and 5 is base sinking passage, and 6 is collecting zone, 7
Being germanium and silicon epitaxial, 8 is polysilicon, and 9 is launch site, and 10 is metal silicide, and 11 is dielectric layer, and 12 is inter-level dielectric, 13
It it is contact hole.
Detailed description of the invention
In germanium silicium HBT technique of the present invention, the most parasitic PNP device accompanying drawings is as follows:
As it is shown in figure 9, in section view angle, made by the dielectric layer 11 of germanium silicon window between launch site 9 and collecting zone 6
Isolation, isolates with shallow trench or field oxygen between collecting zone 6 and base (i.e. N-type extension 3)；Wherein:
Launch site, is the injection region 9 shown in Fig. 9, is that a p-type is heavily doped polygon on the depression angle of device
Shape ring, wherein active region is launch site, is exit outside active area, in the centre in ring-shaped emission district be one by germanium
The polygon that the emitter-window medium of silicium HBT and polysilicon are formed, as the stop of p-type ion implanting；
Base, is made up of the low-doped N-type epitaxy layer 3 on n type buried layer, and by buried regions 2 and base sinking passage
5 draw；
Collecting zone, is made up of low-doped p-type ion implanted region 6, and the silicon face above collecting zone 6 covers metal silication
Thing 10；
On N-type epitaxy layer 3 surface, the enclosing region in ring-shaped emission district 9 and ring-shaped emission district covers germanium and silicon epitaxial 7, and
Dielectric layer 11 and polysilicon 8, metal silicide it is coated with successively above the germanium and silicon epitaxial 7 of ring-shaped emission district 9 enclosing region
10；Silicon face above base sinking passage 5 covers polysilicon 8 and metal silicide 10 successively；Above launch site 9
Also metal silicide 10 is covered on germanium and silicon epitaxial 7；
Whole device surface has inter-level dielectric 12, and each contact hole 13 break-through inter-level dielectric 12 respectively touches described base
Metal silicide 10 on germanium and silicon epitaxial 7 above sinking passage 5, collecting zone 6 and launch site 9, by parasitism PNP pipe
Base 3, collecting zone 6 and launch site 9 draw, form the described parasitic base stage of PNP pipe, colelctor electrode and emitter stage.
Being more than the structure explanation of PNP pipe of the present invention, on the depression angle of device, the present invention is in polygon
Loop configuration, more is octagon, and as shown in Figure 10, collecting zone 6 is positioned at outer ring, between collecting zone and launch site
It is polysilicon isolation area, covers polysilicon 8, the region of ring-shaped emission district 9 encirclement and barrier layer, launch site.The structure of annular
Therefore section view angle shown in Fig. 9 presents symmetrical structure.
The manufacture method of RFLDMOS device of the present invention first combines and is described as follows shown in accompanying drawing 2～9:
1st step, refer to Fig. 2, in lightly doped P type substrate 1, is formed selectively by the mode of ion implanting
N type buried layer 2, injection ion is arsenic, and Implantation Energy is 50～100keV, and dosage is 1015cm-2Above, the longest
Time high temperature advance, its temperature at 1000～1150 DEG C, the time at 30～300 minutes, the n type buried layer eventually formed
Bulk concentration is 1020cm-3Above.
2nd step, with reference to Fig. 3, grows lightly doped N-type extension 2, and its doping content is 1014～1016cm-3, deposit
Epitaxial thickness is according to the breakdown voltage of germanium silicon NPN pipe；In the present embodiment, to colelctor electrode-emitter stage maximum breakdown voltage it is
The device of 12V, epitaxial thickness is at 1.5 microns.
3rd step, as shown in Figure 4, forms shallow trench or oxygen isolation area, field 4 at epitaxial surface.
4th step, ion implanting forms heavily doped N-type sinking electrical connecting passage 5 and draws n type buried layer 2, such as Fig. 5 institute
Show.Injection ion is phosphorus, and implantation dosage is 1015～1016cm-2, energy be 50～100keV；And ion implanting is formed
Lightly doped p-type collecting zone 6, injection ion is boron, and implantation dosage is 5 × 1012～5 × 1013cm-2, energy be 30～
200keV；Then carrying out another high temperature to advance for a long time, temperature is at 950～1050 DEG C, and the time was at 30～60 minutes.
5th step, as shown in Figure 6, deposits germanium silicon Windows media 11, can be preferably one layer of silicon oxide and one layer of polycrystalline
Silicon, the thickness of silicon oxide is at 200～600 angstroms, and the thickness of polysilicon is at 300～600 angstroms, and photoetching and dry etching open transmitting
District's window, grows germanium silicon epitaxial layer 7, and the active area opened at window forms monocrystalline germanium silicon, and other region is then formed many
Brilliant germanium silicon.
6th step, as it is shown in fig. 7, photoetching and dry etching form the interior outer base area of germanium silicium HBT, the transmitting of the most parasitic PNP
Being used for and the lead-out area of contact hole connection outside district and active area.
7th step, as shown in Figure 8, the emitter-window medium 11 of deposit germanium silicium HBT NPN pipe, meanwhile, at PNP
Base active area open the emitter-window of germanium silicium HBT, the rear emitter-polysilicon 8 depositing germanium silicium HBT, photoetching and
Dry etching forms Resistance polysilicon 8 and polysilicon 8 draw-out area of base at PNP emitter stage center, and removes at photoresist
Before carry out the p-type ion implanting of low-yield high dose, the heavy doping forming launch site 9 and collecting zone 6 is drawn.
8th step, rapid thermal annealing activates the foreign ion injected, and temperature is at 950～1100 DEG C, and the time is 10～60
Second；Forming metal silicide 10 again, deposit inter-level dielectric also sequentially forms contact hole 13 and metal connecting line (accompanying drawing is not
Illustrate) complete the connection to emitter stage, base stage and colelctor electrode.Resulting devices complete figure as it is shown in figure 9, device surface
Metal connecting line figure not shown in.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art,
The present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of being made, equivalent
Replacement, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. the most parasitic PNP device in a germanium silicium HBT technique, it is characterised in that: comprise:
Launch site, is the heavily doped polygon ring of a p-type, on the depression angle of device in ring-shaped emission district
Between be that the polygon that formed by emitter-window medium and the polysilicon of germanium silicium HBT stops；
Base, is made up of the low-doped N-type epitaxy layer on n type buried layer, and is drawn by buried regions and base sinking passage；
Collecting zone, is made up of low-doped p-type ion implanted region and heavy doping draw-out area, and the silicon face above collecting zone covers
Lid metal silicide；
On N-type epitaxy layer surface, the epitaxial surface between launch site and collecting zone is made to isolate by dielectric layer and germanium and silicon epitaxial,
Isolate with shallow trench or field oxygen between collecting zone and base；The enclosing region in ring-shaped emission district and ring-shaped emission district covers germanium silicon
Dielectric layer and polysilicon, polysilicon overlying it is coated with successively above extension, and the germanium and silicon epitaxial of ring-shaped emission district enclosing region
Lid metal silicide；Silicon face above base sinking passage covers polysilicon and metal silicide successively；Above launch site
Germanium and silicon epitaxial on also cover metal silicide；
Whole device surface has inter-level dielectric, each contact hole break-through inter-level dielectric respectively touch described base sinking passage,
Metal silicide on germanium and silicon epitaxial above collecting zone and launch site, by the parasitic base of PNP device, collecting zone and
Launch site is drawn, and forms the described parasitic base stage of PNP device, colelctor electrode and emitter stage.
2. the most parasitic PNP device in germanium silicium HBT technique as claimed in claim 1, it is characterised in that: described
The most parasitic PNP device is concentric polygon on depression angle.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 1, its feature
It is, comprises the steps:
1st step, forms heavily doped n type buried layer in P-type silicon substrate, and carries out 1000～1150 DEG C, and the time exists
30～300 minutes pick into；
2nd step, grows lightly doped N-type epitaxy layer on n type buried layer；
3rd step, forms shallow trench or oxygen isolation area, field in N-type epitaxy layer；
4th step, ion implanting forms heavily doped N-type sinking electrical connecting passage and draws n type buried layer, and ion implanting shape
Becoming lightly doped p-type collecting zone, then carry out a temperature at 950～1050 DEG C, the time was 30～60 minutes picked
Enter；
5th step, deposits germanium silicon Windows media at N-type epitaxial surface, and photoetching and dry etching open germanium silicon window, grows germanium silicon
Epitaxial layer, the active area opened at window forms monocrystalline germanium silicon, and other region then forms poly-SiGe；
6th step, photoetching and dry etching formed outside the launch site of laterally parasitic PNP and active area for connecting with contact hole
Lead-out area；
7th step, photoetching and dry etching form Resistance and the polysilicon of base at parasitic PNP device emitter stage center, and
It is 1 × 10 that photoresist carries out implantation dosage before removing15cm-2Above, Implantation Energy is the p-type ion implanting of 5～35KeV；
8th step, rapid thermal annealing activates the foreign ion injected, then forms metal silicide, device surface deposit interlayer
Medium, and sequentially form contact hole and metal connecting line completes the connection to emitter stage, base stage and colelctor electrode.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
Being: in described 1st step, the injection ion of n type buried layer is arsenic, implantation dosage is 1015～1016cm-2, energy be 50～
100keV。
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
It is: in described 2nd step, the dopant ion of N-type extension is phosphorus, and bulk concentration is 5 × 1015～2 × 1016cm-3。
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
Being: in described 4th step, the injection ion of N-type sinking electrical connecting passage is phosphorus, implantation dosage is 1015～1016cm-2,
Implantation Energy is 50～100keV；It is boron that p-type is lightly doped ion implanting, and implantation dosage is 5 × 1012～5 × 1013cm-2,
Implantation Energy is 30～200keV.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
It is: described 5th step medium material is one layer of silicon oxide and one layer of polysilicon.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
It is: in described 7th step, p-type ion implanting is boron.
The manufacture method of the most parasitic PNP device in germanium silicium HBT technique the most according to claim 3, its feature
Be: in described 8th step rapid thermal anneal process be temperature at 950～1100 DEG C, the time was at 10～60 seconds.
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