CN102544081B - Silicon germanium heterojunction NPN (negative-positive-negative) triode and manufacture method - Google Patents
Silicon germanium heterojunction NPN (negative-positive-negative) triode and manufacture method Download PDFInfo
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Abstract
The invention discloses a silicon germanium heterojunction NPN (negative-positive-negative) triode. A collector region is formed in an active region, is connected with N-type pseudo buried layers formed at the bottoms of shallow trench field oxides on two sides of the active region and a collector electrode is guided out through deep-hole contact. The silicon germanium heterojunction NPN triode further comprises a collector region implantation window formed by etching silicon dioxide, P-type polycrystalline silicon and silicon nitride, a lateral wall indent structure is formed by horizontally etching the silicon dioxide, a P-type silicon germanium epitaxial layer is formed at the bottom of the window, the lateral wall indent structure and the P-type polycrystalline silicon contacting with the silicon germanium epitaxial layer serve as an intrinsic base region and outer base regions, inner spacers are formed on the inner side walls of the window, and an emitter region consists of N-type polycrystalline silicon which is filled into the window and extends out of the window from the top of the window. The invention further discloses a manufacture method for the silicon germanium heterojunction NPN triode. The silicon germanium heterojunction NPN triode has the advantages that use of photomasks can be decreased, cost can be reduced, the dimension of the triode can be reduced, parasitic resistance can be reduced and characteristic frequency can be improved.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field, particularly relate to a kind of Ge-Si heterojunction NPN triode; The invention still further relates to a kind of manufacture method of Ge-Si heterojunction NPN triode.
Background technology
In radio frequency applications, need more and more higher device feature frequency, although RFCMOS can realize upper frequency in advanced technology, but be difficult to meet completely radio frequency requirement, realize characteristic frequency more than 40GHz as being difficult to, and the R&D costs of advanced technologies are also very high; Compound semiconductor can be realized very high characteristic frequency device, but due to the shortcoming that material cost is high, size is little, adds that most compounds semiconductor is poisonous, has limited its application.Ge-Si heterojunction bipolar transistor (SiGe HBT) is the fine selection of hyperfrequency device, and what first it utilized SiGe and Si can be with difference, improves the Carrier Injection Efficiency of emitter region, increases the current amplification factor of device; Next utilizes the highly doped of SiGe base, reduces base resistance, improves characteristic frequency; SiGe technique is substantially compatible mutually with silicon technology in addition, and therefore SiGe HBT has become the main force of hyperfrequency device.
Existing SiGe HBT adopts highly doped collector region buried regions, to reduce collector region resistance, adopts in addition deep trench isolation to reduce the parasitic capacitance between collector region and substrate, improves the frequency characteristic of HBT.This device technology mature and reliable, but major defect has: and 1, extension cost in collector region is high; 2, deep trench isolation complex process, and cost is higher.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of Ge-Si heterojunction NPN triode, can reduce use, the reduction process costs of reticle, can realize process accurate control, reduce device size, reduce collector electrode dead resistance, improve the characteristic frequency of device, can simplification of flowsheet.For this reason, the present invention also will provide a kind of manufacture method of Ge-Si heterojunction NPN triode.
For solving the problems of the technologies described above, Ge-Si heterojunction NPN triode provided by the invention is formed on P type silicon substrate, and active area is isolated by shallow slot field oxygen, it is characterized in that, described Ge-Si heterojunction NPN triode comprises:
One collector region, is made up of the N-type ion implanted region being formed in described active area, and the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field.
One counterfeit buried regions, N-type ion implanted region by the oxygen bottom, shallow slot field that is formed at both sides, described active area forms, described counterfeit buried regions forms and is connected with described collector region at the bottom margin of described active area, and collector electrode is drawn in the deep hole contact forming by the shallow slot field oxygen at described counterfeit buried regions top.
Be formed with successively silicon dioxide, P type polysilicon, silicon nitride in described surface of silicon, be etched part form a collector region and inject window of described silicon dioxide, described P type polysilicon and described silicon nitride, described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area; The described silicon dioxide of bottom of window edge is injected by lateral etching in described collector region, injects the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region.
One P type germanium and silicon epitaxial layer, be formed at described collector region and inject on the described active area of bottom of window, the both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon.
On the madial wall of the described collector region injection window on described P type germanium and silicon epitaxial layer, be formed with oxide inside wall; Inject in window and be formed with N-type polysilicon in the described collector region that is formed with described oxide inside wall, the top of described N-type polysilicon extends to the top of the described silicon nitride of injection window both sides, described collector region.
Form intrinsic base region by described P type germanium and silicon epitaxial layer; Form outer base area by described P type polysilicon; Form emitter region by described N-type polysilicon; The Metal Contact forming by the top in described outer base area is drawn base stage; The Metal Contact forming by the top in described emitter region is drawn emitter.
Further improving is that the N-type ion implantation technology condition of described collector region is: implanted dopant is that phosphorus or arsenic, Implantation Energy are 50keV～500keV, implantation dosage 5e11cm
-2～5e13cm
-2.
Further improve be, described counterfeit buried regions be after shallow trench forms, shallow slot field oxygen insert before by N-type Implantation and anneal advance formation, the N-type ion implantation technology condition of described counterfeit buried regions is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
Further improve and be, the described N-type polysilicon of described emitter region adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.
Further improve and be, described oxide inside wall is the described silica of 300 dust～3000 dusts, is carried out anisotropic etching formation again by deposition thickness after injecting window in described collector region and forming.
Further improve and be, the described P type polysilicon of described outer base area adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
For solving the problems of the technologies described above, the manufacture method of Ge-Si heterojunction NPN triode provided by the invention comprises the steps:
Step 1, on P type silicon substrate, form shallow trench and active area.
Step 2, form counterfeit buried regions at the N-type Implantation that carries out of the shallow trench bottom of both sides, described active area.
Step 3, in described shallow trench, insert silica and form shallow slot field oxygen.
Step 4, at described surface of silicon successively deposit silicon dioxide, P type polysilicon, silicon nitride.
Described in step 5, etched portions, silicon dioxide, described P type polysilicon and described silicon nitride form a collector region and inject window, and described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area.
Step 6, inject window by described collector region and carry out N-type Implantation in described active area and form collector region, the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field, and described collector region forms and is connected with described counterfeit buried regions at the bottom margin of described active area.
Step 7, the described silicon dioxide that bottom of window edge is injected in described collector region carry out lateral etching, inject the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region.
Step 8, selective epitaxial growth form P type germanium and silicon epitaxial layer on the described active area of described collector region injection bottom of window; The both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon.
Step 9, the madial wall that injects window in described collector region form oxide inside wall.
Step 10, form N-type polysilicon in described surface of silicon, described N-type polysilicon is filled described collector region completely and is injected window and extend to described collector region and inject on the silicon nitride of window outside.
The described N-type polysilicon of part described in step 11, etching on the silicon nitride of collector region injection window outside forms emitter region.
Step 12, in the shallow slot field oxygen at described counterfeit buried regions top, form deep hole contact and draw described collector electrode, form Metal Contact on the top of described emitter region and draw emitter; Form Metal Contact on the top of described outer base area and draw base stage.
Further improving is that the N-type ion implantation technology condition of counterfeit buried regions described in step 2 is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
Further improve and be, the described P type polysilicon of outer base area described in step 4 adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
Further improving is that the N-type ion implantation technology condition of collector region described in step 6 is: implanted dopant is that phosphorus or arsenic, Implantation Energy are 50keV～500keV, implantation dosage 5e11cm
-2～5e13cm
-2.
Further improve and be, the inside wall of oxide described in step 9 is the described silica of 300 dust～3000 dusts, is carried out anisotropic etching formation again by deposition thickness after injecting window in described collector region and forming.
Further improve and be, the described N-type polysilicon of emitter region described in step 10 adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.
Further improvement is, the lateral etching process using selective wet etching technique of silicon dioxide described in step 7.
The present invention has following beneficial effect:
One, collector region of the present invention does not have n type buried layer and N-type epitaxial loayer; Adopting shallow trench isolation technology (STI) is the oxygen isolation of shallow slot field; Adopt in the N-type of STI bottom and inject the counterfeit buried regions (Pseudo Buried Layer) forming, thus can simplification of flowsheet.
Two, the present invention adopts dark contact hole to contact with counterfeit buried regions, and realize the drawing of collector electrode, thereby the device size that can reduce, reduce the dead resistance of collector electrode, the characteristic frequency of raising,
Three, the present invention has omitted deep trench isolation technique of the prior art, further simplification of flowsheet.
Four, the present invention adopts collector region injection window and oxide inside wall thereof to realize the self-registered technology of emitter region, can save emitter window reticle, thereby can save cost with respect to existing technique the present invention.And adopt self-registered technology can make the size of emitter region be subject to good control, and can realize emitter region polysilicon and the accurate of base epitaxial layer contacts.
Five, with respect to the emitter window dielectric layer technique in existing technique, oxide inside wall technique of the present invention can make the adjusting of base size more flexible, can also effectively prevent that the P type polysilicon heavy doping ion of outer base area is diffused in the described intrinsic base region at contact area place of emitter region and intrinsic base region.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is embodiment of the present invention Ge-Si heterojunction NPN audion schematic diagram;
Fig. 2 A-Fig. 2 G is the Ge-Si heterojunction NPN audion schematic diagram in the each step of embodiment of the present invention manufacture method.
Embodiment
As shown in Figure 1, be embodiment of the present invention Ge-Si heterojunction NPN audion schematic diagram.Embodiment of the present invention Ge-Si heterojunction NPN triode is formed on P type silicon substrate, and active area is shallow-trench isolation shown in Fig. 1 by the isolation of shallow slot field oxygen, and described Ge-Si heterojunction NPN triode comprises:
One collector region is that collector region shown in Fig. 1 is injected, and is made up of the N-type ion implanted region being formed in described active area, and the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field.The N-type ion implantation technology condition of described collector region is: implanted dopant is that phosphorus or arsenic, Implantation Energy are 50keV～500keV, implantation dosage 5e11cm
-2～5e13cm
-2.
One counterfeit buried regions is the counterfeit buried regions of N-type shown in Fig. 1, N-type ion implanted region by the oxygen bottom, shallow slot field that is formed at both sides, described active area forms, described counterfeit buried regions forms and is connected with described collector region at the bottom margin of described active area, and collector electrode is drawn in the deep hole contact forming by the shallow slot field oxygen at described counterfeit buried regions top.Described counterfeit buried regions be after shallow trench forms, shallow slot field oxygen insert before by N-type Implantation and anneal advance form, the N-type ion implantation technology condition of described counterfeit buried regions is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
Be formed with successively silicon dioxide in described surface of silicon, P type polysilicon is the P of heavy doping shown in Fig. 1 type polysilicon, silicon nitride, be etched part form a collector region and inject window of described silicon dioxide, described P type polysilicon and described silicon nitride, described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area; The described silicon dioxide of bottom of window edge is injected by lateral etching in described collector region, injects the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region.Described P type polysilicon adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
One P type germanium and silicon epitaxial layer is the type of P shown in Fig. 1 germanium silicon, be formed at described collector region and inject on the described active area of bottom of window, the both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon.
On the madial wall of the described collector region injection window on described P type germanium and silicon epitaxial layer, be formed with oxide inside wall; Injecting in the described collector region that is formed with described oxide inside wall and being formed with N-type polysilicon in window is described heavy doping N-type polysilicon, and the top of described N-type polysilicon extends to the top of the described silicon nitride of injection window both sides, described collector region.Described N-type polysilicon adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.Described oxide inside wall is to be the described silica of 300 dust～3000 dusts, to be carried out anisotropic etching formation again by deposition thickness after injecting window in described collector region and forming.
Form intrinsic base region by described P type germanium and silicon epitaxial layer; Form outer base area by described P type polysilicon; Form emitter region by described N-type polysilicon; The Metal Contact forming by the top in described outer base area is drawn base stage; The Metal Contact forming by the top in described emitter region is drawn emitter.Finally realize the interconnection of device by metal connecting line.
As shown in Fig. 2 A～Fig. 2 G, it is the Ge-Si heterojunction NPN audion schematic diagram in the each step of embodiment of the present invention manufacture method.The manufacture method of embodiment of the present invention Ge-Si heterojunction NPN triode, comprises the steps:
Step 1, as shown in Figure 2 A forms shallow trench and active area on P type silicon substrate.Described in when etching, the top layer of deposit silicon oxide hard mask successively of active area and silicon nitride hard mask layers are as barrier layer.
Step 2, as shown in Figure 2 A, to form counterfeit buried regions be the counterfeit buried regions of the N-type shown in Fig. 2 A to the N-type Implantation that carries out in the shallow trench bottom of both sides, described active area.The N-type ion implantation technology condition of described counterfeit buried regions is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
Step 3, as shown in Figure 2 A, in described shallow trench, inserting silica, to form shallow slot field oxygen be the shallow-trench isolation shown in described Fig. 2 A.
Step 4, as shown in Figure 2 B, removes described silicon oxide hard mask layer and silicon nitride hard mask layers, and is the type of heavy doping P shown in Fig. 2 B polysilicon, silicon nitride at described surface of silicon successively deposit silicon dioxide, P type polysilicon.Described P type polysilicon adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
Step 5, as shown in Figure 2 C, described in etched portions, silicon dioxide, described P type polysilicon and described silicon nitride form a collector region and inject window, and described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area.
Step 6, as shown in Figure 2 C, carrying out N-type Implantation formation collector region in described active area by described collector region injection window is that collector region shown in Fig. 2 C is injected, the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field, and described collector region forms and is connected with described counterfeit buried regions at the bottom margin of described active area.
Step 7, as shown in Figure 2 D, the described silicon dioxide that adopts selective wet etching technique to inject bottom of window edge to described collector region carries out lateral etching, injects the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region.
Step 8, as shown in Figure 2 E, selective epitaxial growth injects in described collector region that on the described active area of bottom of window, to form P type germanium and silicon epitaxial layer be the germanium of P type shown in Fig. 2 E silicon; The both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon.Described P type germanium and silicon epitaxial layer is as intrinsic base region.Described P type polysilicon is as outer base area.
Step 9, as shown in Figure 2 F, it is side wall shown in Fig. 2 F that the madial wall that injects window in described collector region forms oxide inside wall.Described oxide inside wall can make described P type polysilicon and the N-type polysilicon of emitter region that forms afterwards isolated, in the described intrinsic base region that the impurity that can also prevent described P type polysilicon touches to the emitter region bottom connection forming after sum.Described oxide inside wall is to be the described silica of 300 dust～3000 dusts, to be carried out anisotropic etching formation again by deposition thickness after injecting window in described collector region and forming.
Step 10, as shown in Figure 2 G, forming N-type polysilicon in described surface of silicon is the polysilicon of heavy doping N-type shown in Fig. 2 G, described N-type polysilicon is filled described collector region completely and is injected window and extend to described collector region and inject on the silicon nitride of window outside.Described N-type polysilicon adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.
Step 11, as shown in Figure 2 G, the described N-type polysilicon of part that collector region is injected on the silicon nitride of window outside described in etching forms emitter region.
Step 12, as shown in Figure 1 forms deep hole contact and draws described collector electrode in the shallow slot field oxygen at described counterfeit buried regions top, forms Metal Contact draw emitter on the top of described emitter region; Form Metal Contact on the top of described outer base area and draw base stage.Finally form metal connecting line and realize the interconnection of device.
By specific embodiment, the present invention is had been described in detail above, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (10)
1. a Ge-Si heterojunction NPN triode, is formed on P type silicon substrate, and active area is isolated by shallow slot field oxygen, it is characterized in that, described Ge-Si heterojunction NPN triode comprises:
One collector region, is made up of the N-type ion implanted region being formed in described active area, and the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field;
One counterfeit buried regions, N-type ion implanted region by the oxygen bottom, shallow slot field that is formed at both sides, described active area forms, described counterfeit buried regions forms and is connected with described collector region at the bottom margin of described active area, and collector electrode is drawn in the deep hole contact forming by the shallow slot field oxygen at described counterfeit buried regions top; Described counterfeit buried regions be after shallow trench forms, shallow slot field oxygen insert before by N-type Implantation and anneal advance form;
Be formed with successively silicon dioxide, P type polysilicon, silicon nitride in described surface of silicon, be etched part form a collector region and inject window of described silicon dioxide, described P type polysilicon and described silicon nitride, described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area; The described silicon dioxide of bottom of window edge is injected by lateral etching in described collector region, injects the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region;
One P type germanium and silicon epitaxial layer, be formed at described collector region and inject on the described active area of bottom of window, the both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon;
On the madial wall of the described collector region injection window on described P type germanium and silicon epitaxial layer, be formed with oxide inside wall; Inject in window and be formed with N-type polysilicon in the described collector region that is formed with described oxide inside wall, the top of described N-type polysilicon extends to the top of the described silicon nitride of injection window both sides, described collector region;
Form intrinsic base region by described P type germanium and silicon epitaxial layer; Form outer base area by described P type polysilicon; Form emitter region by described N-type polysilicon; The Metal Contact forming by the top in described outer base area is drawn base stage; The Metal Contact forming by the top in described emitter region is drawn emitter.
2. Ge-Si heterojunction NPN triode as claimed in claim 1, is characterized in that: the N-type ion implantation technology condition of described collector region is: implanted dopant is that phosphorus or arsenic, Implantation Energy are 50keV～500keV, implantation dosage 5e11cm
-2～5e13cm
-2.
3. Ge-Si heterojunction NPN triode as claimed in claim 1, is characterized in that: the N-type ion implantation technology condition of described counterfeit buried regions is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
4. Ge-Si heterojunction NPN triode as claimed in claim 1, it is characterized in that: the described N-type polysilicon of described emitter region adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.
5. Ge-Si heterojunction NPN triode as claimed in claim 1, it is characterized in that: the described P type polysilicon of described outer base area adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
6. a manufacture method for Ge-Si heterojunction NPN triode, is characterized in that, comprises the steps:
Step 1, on P type silicon substrate, form shallow trench and active area;
Step 2, form counterfeit buried regions at the N-type Implantation that carries out of the shallow trench bottom of both sides, described active area;
Step 3, in described shallow trench, insert silica and form shallow slot field oxygen;
Step 4, at described surface of silicon successively deposit silicon dioxide, P type polysilicon, silicon nitride;
Described in step 5, etched portions, silicon dioxide, described P type polysilicon and described silicon nitride form a collector region and inject window, and described collector region is injected window and is positioned at the zone line of top, described active area and described collector region and injects the size that the size of window is less than described active area;
Step 6, inject window by described collector region and carry out N-type Implantation in described active area and form collector region, the described collector region degree of depth is greater than the degree of depth of oxygen bottom, described shallow slot field, and described collector region forms and is connected with described counterfeit buried regions at the bottom margin of described active area;
Step 7, the described silicon dioxide that bottom of window edge is injected in described collector region carry out lateral etching, inject the be separated by described collector region of a segment distance of edge that bottom of window edge forms silicon dioxide described in one and described P type polysilicon edge inject the concave side wall structure of window in described collector region;
Step 8, selective epitaxial growth form P type germanium and silicon epitaxial layer on the described active area of described collector region injection bottom of window; The both sides of described P type germanium and silicon epitaxial layer are connected with described silicon dioxide, in described concave side wall structure, described P type germanium and silicon epitaxial layer forms and contacts with described P type polysilicon; Form intrinsic base region by described P type germanium and silicon epitaxial layer; Form outer base area by described P type polysilicon;
Step 9, the madial wall that injects window in described collector region form oxide inside wall;
Step 10, form N-type polysilicon in described surface of silicon, described N-type polysilicon is filled described collector region completely and is injected window and extend to described collector region and inject on the silicon nitride of window outside;
The described N-type polysilicon of part described in step 11, etching on the silicon nitride of collector region injection window outside forms emitter region;
Step 12, in the shallow slot field oxygen at described counterfeit buried regions top, form deep hole contact and draw described collector electrode, form Metal Contact on the top of described emitter region and draw emitter; Form Metal Contact on the top of described outer base area and draw base stage.
7. method as claimed in claim 6, is characterized in that: the N-type ion implantation technology condition of counterfeit buried regions described in step 2 is: implantation dosage 1e14cm
-2～5e15cm
-2, Implantation Energy 2KeV～30KeV.
8. method as claimed in claim 6, it is characterized in that: the described P type polysilicon of outer base area described in step 4 adulterates by Implantation, and process conditions are: implanted dopant is that boron or boron fluoride, Implantation Energy are that 2Kev～30Kev, implantation dosage are 5e14cm
-2～5e15cm
-2.
9. method as claimed in claim 6, is characterized in that: the N-type ion implantation technology condition of collector region described in step 6 is: implanted dopant is that phosphorus or arsenic, Implantation Energy are 50keV～500keV, implantation dosage 5e11cm
-2～5e13cm
-2.
10. method as claimed in claim 6, it is characterized in that: the described N-type polysilicon of emitter region described in step 10 adulterates by Implantation, and process conditions are: implanted dopant is that phosphorus or arsenic, Implantation Energy condition are that 10Kev～100Kev, implantation dosage are 1e14cm
-2～1e17cm
-2.
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| CN103000678B (en) * | 2012-12-12 | 2015-05-27 | 清华大学 | Bipolar transistor with separated outer base region and collector region and manufacture method thereof |
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