CN102104064B - Parasitic lateral PNP triode in SiGe heterojunction bipolar transistor process and manufacturing method thereof - Google Patents
Parasitic lateral PNP triode in SiGe heterojunction bipolar transistor process and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a parasitic lateral PNP triode in a SiGe heterojunction bipolar transistor process. An active region is isolated by shallow trench field oxygen. The triode comprises a collector region, a base region and an emitter region, wherein the base region and the collector region are formed in the active region by ion implantation, and are laterally connected; the bottoms of the base region and the collector region are connected with an N-type burial layer and a P-type burial layer respectively; the N-type burial layer and the P-type burial layer are formed at the bottoms of adjacent shallow trenches of the base region and the collector region; the emitter region is formed on a part of upper area of the base region, and is at a lateral distance away from the collector base; and the collector region, the emitter region and the base region are picked-up by heavily-doped polycrystalline silicon connected with the tops of the collector region, the emitter region and the base region respectively. The invention also discloses a manufacturing method for the parasitic lateral PNP triode in the SiGe heterojunction bipolar transistor process. The triode provided by the invention can be used as an output device in a high speed and high gain heterojunction bipolar transistor circuit, can provide more than one device for the circuit without additional process conditions, and also can reduce the production cost.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, particularly relate to the parasitic lateral type PNP triode in a kind of SiGe HBT technology, the invention still further relates to the manufacturing approach of the parasitic lateral type PNP triode in this SiGe HBT technology.
Background technology
In radio frequency applications; Need increasingly high device feature frequency,, but be difficult to satisfy fully radio frequency requirement though RFCMOS can realize upper frequency in advanced person's technology; Realize the characteristic frequency more than the 40GHz as being difficult to, and the R&D costs of advanced technologies also are very high; Compound semiconductor can be realized very high characteristic frequency device, but because the shortcoming that material cost is high, size is little adds that the most compounds semiconductor is poisonous, has limited its application.SiGe heterojunction bipolar transistor (HBT) then is the fine selection of hyperfrequency device, and what at first it utilized SiGe and Si can be with difference, improves the charge carrier injection efficiency of emitter region, increases the current amplification factor of device; Next utilizes the highly doped of SiGe base, reduces base resistance, improves characteristic frequency; SiGe technology is compatible mutually with silicon technology basically in addition, so SiGe HBT has become one of main flow of hyperfrequency device.
Existing SiGe HBT adopts highly doped collector region buried regions, to reduce collector region resistance, adopts high concentration high-energy N type to inject, and connects the collector region buried regions, forms collector terminal (collector pick-up).The low-doped collector region in outer Yanzhong on the collector region buried regions, the SiGe extension that P type on the throne mixes forms the base, and heavy then N type DOPOS doped polycrystalline silicon constitutes emitter, finally accomplishes the making of HBT.This collector region buried regions manufacture craft mature and reliable, but major defect has: and 1, collector region extension cost is high; 2, deep trench isolation complex process, and cost is higher.
Summary of the invention
Technical problem to be solved by this invention provides the parasitic lateral type PNP triode in a kind of SiGe HBT technology; Can be as the output device in high speed, the high-gain HBT circuit; Process conditions that need not be extra can be embodied as circuit provides many a kind of devices to select, and can also reduce production costs; For this reason, the present invention also provides the manufacturing approach of the parasitic lateral type PNP triode in a kind of SiGe HBT technology.
For solving the problems of the technologies described above, the active area of the parasitic lateral type PNP triode in the SiGe HBT technology provided by the invention is isolated by shallow slot field oxygen, comprises a collector region, a base, an emitter region.
Active area is the separated into two parts zone in the horizontal; Said collector region is made up of a p type impurity ion implanted layer that is formed in the active area first zone; The p type impurity ion implanted layer of said collector region is to inject through two step p type impurity ions to form; Implanted dopant is a boron, and the first step is that the anti-break-through in the P trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 25～200keV; Second step was that the threshold value adjustment in the P trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 5～25keV.Said collector region bottom connects a p type buried layer, and said p type buried layer is formed at the shallow slot bottom of said collector region side, and said p type buried layer injects through high dose, low-energy P type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is boron or boron difluoride; Said collector region is drawn through connect a P heavily doped polysilicon at its top.
Said base is made up of a N type foreign ion implanted layer that is formed in the active area second portion zone and be positioned at said collector region side; The N type foreign ion implanted layer of said base is to inject through two step N type foreign ions to form; Implanted dopant is phosphorus or arsenic; The first step is that the anti-break-through in the N trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 100～400keV; Second step was that the threshold value adjustment in the N trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 15～100keV.Bottom, said base connects a n type buried layer, and said n type buried layer is formed at the shallow slot bottom of said base side, and the n type buried layer of said base injects through high dose, low-energy N type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is a phosphorus; Draw through connect a N heavily doped polysilicon at its top said base.
Said emitter region; By being formed at top, base and constituting with a p type impurity ion implanted layer of said collector region subregion separated by a distance in the horizontal; Constitute the width of said base in the distance of laterally being separated by by said emitter region and said collector region; The p type impurity ion implanted layer of said emitter region adopts the PLDD of PMOS pipe to inject and forms, and the dosage of injection is 5e12～1e15cm
-2, energy is 5～30keV, the impurity of injection is boron or boron difluoride, implantation dosage and degree of depth occurrence are requirement with the performance that satisfies the PMOS pipe.Draw through connect a P heavily doped polysilicon at its top said emitter region.
The polysilicon that said collector region, emitter region, base connect adopts the emission collection polysilicon formation condition of SiGe HBT to form; The heavy doping of the polysilicon that said collector region is connected with the emitter region is leaked to inject through the source of the P type of MOSFET and is realized, the heavy doping of the polysilicon that said base connects is leaked to inject through the source of the N type of MOSFET and realized.The source of said P type is leaked to inject in two steps and is accomplished, and first step implanted dopant is a boron, and dosage range is 1e12～1e14cm
-2, energy is 10～30keV, the second step implanted dopant is a boron, dosage range is 1e14～5e15cm
-2, energy is 5～10keV; The source of said N type is leaked to inject also and is accomplished in two steps, and first step implanted dopant is a phosphorus, and dosage range is 1e12～1e14cm
-2, energy is 20～60keV, the second step implanted dopant is phosphorus or arsenic, dosage range is 1e14～1e16cm
-2, energy is 5～50keV.
The manufacturing approach of the parasitic lateral type PNP triode in this SiGe HBT technology provided by the invention comprises following processing step:
On silicon substrate, be formed with source region and shallow slot;
Form the p type buried layer of collector region, form through injecting the p type impurity ion in the shallow slot bottom of collector region side;
Form the n type buried layer of base, inject N type foreign ion through the shallow slot bottom of side and form in the base;
Form shallow slot field oxygen;
Form collector region, in said active area, carry out the p type impurity ion and inject formation, utilize annealing process to make the p type buried layer of said collector region diffuse laterally into said active area and also be connected with said collector region;
Form the base, carry out N type foreign ion at the side of collector region described in the said active area and inject and form, utilize annealing process to make the n type buried layer of said base diffuse laterally into said active area and be connected with said base;
Form the emitter region, carry out the p type impurity ion in subregion, top, said base and inject formation;
Form being connected of said collector region, emitter region and base, form through forming polysilicon at the top of said collector region, emitter region and base and the polysilicon that the polysilicon at said collector region, top, emitter region carries out the heavy doping of P type, top, said base being carried out the heavy doping of N type.
The device of parasitic lateral type PNP in the SiGe HBT technology of the present invention; Its making relates to buried regions, PLDD injection, the N type of MOSFET and the emission collection polysilicon that injection and HBT are leaked in P type source in the BiCMOS technology; Have greater than 15 current amplification factors with greater than the 1Ghz characteristic frequency; Can be as the output device in high speed, the high-gain HBT circuit, process conditions that need not be extra can be embodied as circuit provides many a kind of devices to select, and therefore also can reduce production costs.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the parasitic lateral type PNP triode device sectional view in the SiGe HBT technology of the present invention;
Fig. 2 A-Fig. 2 F is the device sectional view of parasitic lateral type PNP triode in manufacture process in the SiGe HBT technology of the embodiment of the invention;
Fig. 3 is the Impurity Distribution curve of the parasitic lateral type PNP triode in the SiGe HBT technology of the present invention of TCAD simulation;
Fig. 4 A is the Gummel curve of the parasitic lateral type PNP triode in the SiGe HBT technology of the present invention of TCAD simulation;
Fig. 4 B is the gain curve of the parasitic lateral type PNP triode in the SiGe HBT technology of the present invention of TCAD simulation.
Embodiment
As shown in Figure 1; It is the parasitic lateral type PNP triode device sectional view in the SiGe HBT technology of the present invention; It is that shallow trench isolation shown in Figure 1 leaves that active area is isolated through shallow slot field oxygen; Comprise collector region, base, emitter region, active area is the separated into two parts zone in the horizontal, and said collector region is made up of a p type impurity ion implanted layer that is formed in the active area first zone; This p type impurity ion implanted layer utilizes anti-break-through injection and the threshold value adjustment in the P trap to inject and forms, and the impurity of injection is phosphorus; Said collector region bottom connects a p type buried layer, and said p type buried layer is formed at the shallow slot bottom of said collector region side, and said p type buried layer injects through high dose, low-energy P type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is boron or boron difluoride; Said collector region is drawn through connect a P heavily doped polysilicon at its top, and this P heavily doped polysilicon is zone shown in the P+Poly under the collector electrode.
Said base is made up of a N type foreign ion implanted layer that is formed in the active area second portion zone and be positioned at said collector region side; The N type foreign ion implanted layer of said base utilizes anti-break-through injection and the threshold value adjustment in the N trap to inject and forms, and the impurity of injection is boron; Bottom, said base connects a n type buried layer, and said n type buried layer is formed at the shallow slot bottom of said base side, and the n type buried layer of said base injects through high dose, low-energy N type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is a phosphorus; Draw through connect a N heavily doped polysilicon at its top said base, and this N heavily doped polysilicon is zone shown in the N+Poly under the base stage.
Said emitter region; Being made up of a p type impurity ion implanted layer that is formed at subregion, top, base is zone shown in the P-2; The p type impurity ion implanted layer of said emitter region adopts the PLDD of PMOS pipe to inject and forms; The impurity that injects is boron or boron difluoride, and the implantation dosage and the degree of depth are requirement with the performance that satisfies the PMOS pipe; Draw through connect a P heavily doped polysilicon at its top said emitter region, and this P heavily doped polysilicon is zone shown in the P+ under the emitter.
The polysilicon that said collector region, emitter region, base connect adopts the emission collection polysilicon formation condition of SiGe HBT to form; The heavy doping of the polysilicon that said collector region is connected with the emitter region is leaked to inject through the source of the P type of MOSFET and is realized, the heavy doping of the polysilicon that said base connects is leaked to inject through the source of the N type of MOSFET and realized.
Shown in Fig. 2 A-Fig. 2 F, be the device sectional view of parasitic lateral type PNP triode in manufacture process in the SiGe HBT technology of the embodiment of the invention; The manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology of the embodiment of the invention is when making SiGe HBT, to utilize SiGe HBT existing processes through the present invention; Parasitic formation lateral type PNP triode of the present invention comprises the steps: when forming SiGe HBT
Processing step 1: shown in Fig. 2 A, select lightly doped P type silicon substrate for use, make isolation technology with the shallow trench etching.After the shallow trench etching, carrying out implantation dosage respectively is 1e14～1e16cm
-2High dose, energy inject in order to form n type buried layer and p type buried layer less than low-energy N type of 15keV and p type impurity.The anti-break-through injection that utilizes P trap and N trap to inject is injected with threshold value adjustment and is formed collector region and base, forms collector region and comprises that two step P foreign ions inject, and implanted dopant is a boron, and the first step is the anti-break-through injection in the P trap, and dosage range is 5e11～5e13cm
-2, energy is 25～200keV, second step was that the threshold value adjustment in the P trap is injected, dosage range is 1e11～1e13cm
-2, energy is 5～25keV; Form said base and comprise that two step N type foreign ions inject, implanted dopant is phosphorus or arsenic, and the first step is that the anti-break-through in the N trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 100～400keV; Second step was that the threshold value adjustment in the N trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 15～100keV.The emitter region then is that the injection through PLDD realizes that the dosage of injection is 5e12～1e15cm
-2, energy is 5～30keV, the impurity of injection is boron or boron difluoride, implantation dosage and degree of depth occurrence are requirement with the performance that satisfies the PMOS pipe.
Processing step 2: shown in Fig. 2 B, ground floor oxide layer SiO2 about deposit one deck 10 nanometer thickness and the ground floor polysilicon Poly about 30 nanometers; To etch away at the said ground floor oxide layer SiO2 and the polysilicon Poly of Ge-Si heterojunction triode region then, and in the said oxide layer SiO2 in parasitic lateral type PNP triode device according to the invention zone and polysilicon Poly etching not.Carry out the germanium and silicon epitaxial growth, form the zone at the Ge-Si heterojunction triode device, epitaxial growth forms the germanium silicon single crystal; And at the device area of parasitic lateral type PNP triode according to the invention, what extension formed then is polysilicon; Distinguish deposit second layer oxide layer SiO2 and silicon nitride SiN subsequently again, its thickness is 20 nanometers.
Processing step 3: shown in Fig. 2 C, the etching of Ge-Si heterojunction triode base germanium silicon fiml; The film of 2 deposits of processing step in the parasitic lateral type PNP triode device according to the invention on the bonding pad of base stage, collector and emitter is that ground floor oxide layer SiO2, ground floor polysilicon Poly, second layer oxide layer SiO2, silicon nitride SiN will remove in current etching, thereby opens connecting hole.
Processing step 4: shown in Fig. 2 D, the etching of SiGe HBT emitter window is removed second layer oxide layer SiO2 above the SiGe epitaxial loayer and silicon nitride SiN in the zone that needs opening, thereby is exposed the SiGe layer.
Processing step 5: shown in Fig. 2 E, the second layer polysilicon Poly of deposit one deck 200 nanometer left and right thicknesses, it will be as the formation of emitter region in SiGe HBT zone; And in the device of parasitic lateral type PNP triode according to the invention, this second layer polysilicon Poly be used for three of interface unit extreme.The second layer polysilicon Poly that connects base stage is carried out the N type mix, this doping is leaked through the source of NMOS pipe and is injected realization; The second layer polysilicon Poly that connects emitter and collector is carried out the P type mix up, this doping is leaked through the source of PMOS pipe and is injected realization.The source of said P type is leaked to inject in two steps and is accomplished, and first step implanted dopant is a boron, and dosage range is 1e12～1e14cm
-2, energy is 10～30keV, the second step implanted dopant is a boron, dosage range is 1e14～5e15cm
-2, energy is 5～10keV; The source of said N type is leaked to inject also and is accomplished in two steps, and first step implanted dopant is a phosphorus, and dosage range is 1e12～1e14cm
-2, energy is 20～60keV, the second step implanted dopant is phosphorus or arsenic, dosage range is 1e14～1e16cm
-2, energy is 5～50keV.
Processing step 6: shown in Fig. 2 F, SiGe HBT emitter-polysilicon etching; In the parasitic lateral type PNP triode device according to the invention, be used for that the zone is etched outside three extreme polysilicons of interface unit; The last moulding of device.
As shown in Figure 3, be the Impurity Distribution curve of the parasitic lateral type PNP triode in the SiGe HBT technology of the present invention of TCAD simulation.Fig. 3 A is the sectional view of the parasitic lateral type PNP triode in the said SiGe HBT technology; Under emitter, indicated vertical transversal 1 curve; Transversal 1 is distributed with emitter region, base and substrate from top to bottom, and Fig. 3 B has simulated the Impurity Distribution of transversal 1 pairing emitter region, base and substrate; Near surface in the emitter region has indicated horizontal transversal 2 curves, and transversal 2 curves from left to right are distributed with emitter region, base and collector region, and Fig. 3 C has simulated the Impurity Distribution of transversal 2 pairing emitter regions, base and substrate.From the horizontal effective Impurity Distribution of Fig. 3 C, emitter region that PLDD forms and N trap inject and form effective concentration difference between the base (N-) that forms.Base width can be by the distance of PLDD and P trap injection region emitter region and collector region apart from control, so just increased the degree of freedom of device trim performance.Fig. 4 A and Fig. 4 B are respectively the Gummel curve and the gain curves of the parasitic lateral type PNP triode in the SiGe HBT technology of the present invention of TCAD simulation, can find out that the maximum gain of device under optimal conditions has also realized more than 20.
More than through specific embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be regarded as protection scope of the present invention.
Claims (12)
1. the parasitic lateral type PNP triode in the SiGe HBT technology, it is characterized in that: active area is isolated by shallow slot field oxygen, comprises a collector region, a base, an emitter region;
Active area is the separated into two parts zone in the horizontal; Said collector region is made up of a p type impurity ion implanted layer that is formed in the active area first zone; Said collector region bottom connects a p type buried layer; Said p type buried layer is formed at the shallow slot bottom of said collector region side, and said collector region is drawn through connect a P heavily doped polysilicon at its top;
Said base is made up of a N type foreign ion implanted layer that is formed in the active area second portion zone and be positioned at said collector region side; Bottom, said base connects a n type buried layer; Said n type buried layer is formed at the shallow slot bottom of said base side, and draw through connect a N heavily doped polysilicon at its top said base;
Said emitter region is made up of a p type impurity ion implanted layer of the subregion that is formed at top, base; Constitute the width of said base by said emitter region and said collector region in the distance of laterally being separated by, draw through connect a P heavily doped polysilicon at its top said emitter region.
2. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1; It is characterized in that: the p type impurity ion implanted layer of said collector region is to inject through two step p type impurity ions to form; Implanted dopant is a boron; The first step is that the anti-break-through in the P trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 25～200keV; Second step was that the threshold value adjustment in the P trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 5～25keV.
3. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1; It is characterized in that: the N type foreign ion implanted layer of said base is to inject through two step N type foreign ions to form; Implanted dopant is phosphorus or arsenic; The first step is that the anti-break-through in the N trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 100～400keV; Second step was that the threshold value adjustment in the N trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 15～100keV.
4. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1 is characterized in that: the p type impurity ion implanted layer of said emitter region adopts the PLDD of PMOS pipe to inject and forms, and the dosage of injection is 5e12～1e15cm
-2, energy is 5～30keV, the impurity of injection is boron or boron difluoride, implantation dosage and degree of depth occurrence are requirement with the performance that satisfies the PMOS pipe.
5. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1 is characterized in that: the p type buried layer of said collector region injects through high dose, low-energy P type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is boron or boron difluoride.
6. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1 is characterized in that: the n type buried layer of said base injects through high dose, low-energy N type ion and forms, and implantation dosage is 1e14～1e16cm
-2, energy is less than 15keV, implanted dopant is a phosphorus.
7. the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 1; It is characterized in that: the polysilicon that said collector region, emitter region, base connect adopts the emission collection polysilicon formation condition of SiGe HBT to form; The heavy doping of the polysilicon that said collector region is connected with the emitter region is leaked to inject through the source of the P type of MOSFET and is realized, the heavy doping of the polysilicon that said base connects is leaked to inject through the source of the N type of MOSFET and realized; The source of said P type is leaked to inject in two steps and is accomplished, and first step implanted dopant is a boron, and dosage range is 1e12～1e14cm
-2, energy is 10～30keV, the second step implanted dopant is a boron, dosage range is 1e14～5e15cm
-2, energy is 5～10keV; The source of said N type is leaked to inject also and is accomplished in two steps, and first step implanted dopant is a phosphorus, and dosage range is 1e12～1e14cm
-2, energy is 20～60keV, the second step implanted dopant is phosphorus or arsenic, dosage range is 1e14～1e16cm
-2, energy is 5～50keV.
8. the manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology is characterized in that, comprising:
On silicon substrate, be formed with source region and shallow slot;
Form the p type buried layer of collector region, form through injecting the p type impurity ion in the shallow slot bottom of collector region side;
Form the n type buried layer of base, inject N type foreign ion through the shallow slot bottom of side and form in the base;
Form shallow slot field oxygen;
Form collector region, in said active area, carry out the p type impurity ion and inject formation, utilize annealing process to make the p type buried layer of said collector region diffuse laterally into said active area and also be connected with said collector region;
Form the base, carry out N type foreign ion at the side of collector region described in the said active area and inject and form, utilize annealing process to make the n type buried layer of said base diffuse laterally into said active area and be connected with said base;
Form the emitter region, carry out the p type impurity ion in subregion, top, said base and inject formation;
Form being connected of said collector region, emitter region and base, form through forming polysilicon at the top of said collector region, emitter region and base and the polysilicon that the polysilicon at said collector region, top, emitter region carries out the heavy doping of P type, top, said base being carried out the heavy doping of N type.
9. the manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 8, it is characterized in that: the implantation dosage of the p type buried layer of said collector region is 1e14～1e16cm
-2, energy is boron or boron difluoride less than 15keV, implanted dopant; The n type buried layer implantation dosage of said base is 1e14～1e16cm
-2, energy is a phosphorus less than 15keV, implanted dopant.
10. the manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 8; It is characterized in that: the p type impurity ion of said collector region injects and comprises that two step P foreign ions inject; Implanted dopant is a boron; The first step is that the anti-break-through in the P trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 25～200keV, second step was that the threshold value adjustment in the P trap is injected, dosage range is 1e11～1e13cm
-2, energy is 5～25keV; The N type foreign ion implanted layer of said base comprises that two step N type foreign ions inject, and implanted dopant is phosphorus or arsenic, and the first step is that the anti-break-through in the N trap is injected, and dosage range is 5e11～5e13cm
-2, energy is 100～400keV; Second step was that the threshold value adjustment in the N trap is injected, and dosage range is 1e11～1e13cm
-2, energy is 15～100keV.
11. the manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 8 is characterized in that: the p type impurity ion of said emitter region injects and adopts the PLDD of PMOS pipe to inject, and the dosage of injection is 5e12～1e15cm
-2, energy is 5～30keV, the impurity of injection is boron or boron difluoride, implantation dosage and degree of depth occurrence are requirement with the performance that satisfies the PMOS pipe.
12. the manufacturing approach of the parasitic lateral type PNP triode in the SiGe HBT technology as claimed in claim 8 is characterized in that: the top polysilicon of said collector region, emitter region and base is the emission collection polysilicon formation condition formation through SiGe HBT; The P type source of the P type heavy doping of the polysilicon at said collector region, top, emitter region through MOSFET leak inject realize, the N type heavy doping of the polysilicon at top, said base leaks to inject through the N type source of MOSFET and realizes; The source of said P type is leaked to inject in two steps and is accomplished, and first step implanted dopant is a boron, and dosage range is 1e12～1e14cm
-2, energy is 10～30keV, the second step implanted dopant is a boron, dosage range is 1e14～5e15cm
-2, energy is 5～10keV; The source of said N type is leaked to inject also and is accomplished in two steps, and first step implanted dopant is a phosphorus, and dosage range is 1e12～1e14cm
-2, energy is 20～60keV, the second step implanted dopant is phosphorus or arsenic, dosage range is 1e14～1e16cm
-2, energy is 5～50keV.
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| US10224411B2 (en) | 2011-09-23 | 2019-03-05 | Alpha And Omega Semiconductor Incorporated | Lateral PNP bipolar transistor with narrow trench emitter |
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| US8916951B2 (en) * | 2011-09-23 | 2014-12-23 | Alpha And Omega Semiconductor Incorporated | Lateral PNP bipolar transistor formed with multiple epitaxial layers |
| CN103050517B (en) * | 2011-10-14 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | A kind of parasitic PNP device structure adopting SiGe HBT technique and preparation method thereof |
| CN102412287B (en) * | 2011-11-08 | 2013-07-24 | 上海华虹Nec电子有限公司 | Silicon-germanium HBT (heterojunction bipolar transistor) device and fabrication method thereof |
| CN103050522A (en) * | 2012-12-06 | 2013-04-17 | 上海华虹Nec电子有限公司 | Lateral parasitic PNP triode in SiGe heterojunction bipolar transistor (HBT) process and manufacturing method for lateral parasitic PNP triode |
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| CN1179627A (en) * | 1996-10-11 | 1998-04-22 | 三星电子株式会社 | Complementary bipolar transistors and manufacturing method thereof |
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| US5329145A (en) * | 1991-10-15 | 1994-07-12 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and its integration method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224411B2 (en) | 2011-09-23 | 2019-03-05 | Alpha And Omega Semiconductor Incorporated | Lateral PNP bipolar transistor with narrow trench emitter |
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| CN102104064A (en) | 2011-06-22 |
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