CN103839839A - Method for assembling chip by coating back surface of chip with solder paste - Google Patents
Method for assembling chip by coating back surface of chip with solder paste Download PDFInfo
- Publication number
- CN103839839A CN103839839A CN201410113333.5A CN201410113333A CN103839839A CN 103839839 A CN103839839 A CN 103839839A CN 201410113333 A CN201410113333 A CN 201410113333A CN 103839839 A CN103839839 A CN 103839839A
- Authority
- CN
- China
- Prior art keywords
- chip
- baking oven
- tin cream
- scope
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/2957—Single coating layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention relates to a method for assembling a chip by coating the back surface of the chip with solder paste. According to the method, a drying oven provided with a nitrogen charge valve, a vacuumizing pump and a circulating fan is used as a technological device. The method for assembling the chip comprises the steps that the back surface of the chip is coated with the solder paste, the chip is assembled on a frame, the frame is delivered into the drying oven, and the drying oven conducts vacuumization and nitrogen charge; a vacuum valve is opened, the temperature of the drying oven ranges from 150 DEG C to 220 DEG C, a solvent and scaling powder which are contained by the solder paste are gasified at this time, and the gasified solvent and the gasified scaling power are pumped out by the vacuumizing pump along with nitrogen; when the temperature of the drying oven is raised to 250-300 DEG C, solder ball particles contained by the solder paste are molten; the nitrogen charge valve of the drying oven is closed, and vacuumization continues to be conducted; the temperature in the drying oven is lowered, the vacuum valve is closed, nitrogen charge is conducted so that the internal pressure of the drying oven can be one standard atmospheric pressure, and then assembly work for welding the back surface of the chip to the frame is completed. The method for assembling the chip by coating the back surface of the chip with the solder paste has the advantages that the technology is reasonable, production cost is low, the welding voidage of the chip is lower than 1 percent, and the rotation angle can be controlled to be smaller than 1 degree.
Description
Technical field
The present invention is specifically related to a kind of load method of chip back coating tin cream, belongs to semiconductor packaging field.
Background technology
The welding method of described chip back and chi frame, is referred to as in the industry chip back and applies the load method of tin cream.
Existing chip back applies the load method of tin cream, mainly contains two kinds of continuous tunnel furnace baking and reflow ovens bakings.But adopt two kinds of above-mentioned load methods, the solvent that its tin cream is contained and scaling powder are after gasification volatilization, can be deposited on chip surface, stain chip, even produce the empty problem of welding, thereby affect the reliability of product, and workpiece transports in process in the track of continuous tunnel furnace, also there will be shake, simultaneously owing to heating up and causing the contained solvent evaporates of tin cream too fast too soon in baker, make chip produce the problem of corner in the change of team of chi frame inward turning, the problems referred to above embody particularly serious on the less chip of specification.Show according to data, the welding voidage of the product that these two kinds of load curings are produced is not less than 5%, the corner of chip is not less than 5 °, after chip and framework baking welding, the defects such as both surface contaminations, also need to adopt the method enforcing remedies such as Ion Cleaning, make production technology unreasonable, production cost is high.
Summary of the invention
The object of the invention is: one is provided, and not only technique is reasonable, and production cost is low, and the welding voidage of chip is less than 1%, corner can be controlled the chip back being less than within the scope of 1 ° and apply the load method of tin cream, to overcome the deficiencies in the prior art.
In order to achieve the above object, technical scheme of the present invention: a kind of chip back applies the load method of tin cream, thering is nitrogen fill valve, the vacuum pumping pump of vacuum valve and the baking oven of interior circulating fan are housed as technological equipment,, it is characterized in that for the workpiece that sets out with chip and chi frame: the step of described load successively:
Step a, by chip back apply tin cream and with chi frame assembling after deliver in baking oven, opening vacuum valve vacuumizes, and nitrogen fill valve is closed, while being pressed within the scope of 0.05～0.15Pa in baking oven, open again nitrogen fill valve nitrogen injection, make the interior pressure of baking oven maintain within the scope of 0.5～0.6Pa, and circulating fan in opening;
Step b, to heating up workpiece is toasted in baking oven, and baking temperature is within the scope of 150～220 DEG C, now, the solvent that tin cream is contained and scaling powder gasification, and detach along with nitrogen is evacuated pump;
Step c, the solvent of tin cream and scaling powder are gasified and be pulled out in situation through step b at described workpiece, temperature in baking oven is continued to heat up workpiece is toasted, when temperature to be baked is increased within the scope of 250～300 DEG C, the contained tin ball particle of described tin cream is melted;
Steps d, the tin ball particle of tin cream is melted in situation through step c at described workpiece, stop heating and closing nitrogen fill valve and the interior circulating fan of baking oven, and continue to vacuumize, while being pressed within the scope of 0.05～0.15Pa in baking oven, again open nitrogen fill valve and interior circulating fan, make the interior pressure of baking oven remain within the scope of 0.5～0.6Pa;
Step e, at described workpiece after steps d, temperature in baking oven is lowered the temperature, temperature in baking oven is within the scope of 15～25 DEG C time, close vacuum valve, making the internal drop in baking oven is 1 standard atmospheric pressure, thereafter close nitrogen fill valve and interior circulating fan, complete the load work of chip back and chi frame welding.
In technique scheme, the nitrogen that described baking oven is filled with contains the hydrogen of nitrogen total weight 1.5～3.5%.
In technique scheme, the time of implementation step b was controlled within the scope of 30 ~ 45 minutes.
In technique scheme, the time of implementation step c was controlled within the scope of 15 ~ 20 minutes.
In technique scheme, the time of implementation step d was controlled within the scope of 10 ~ 15 minutes.
In technique scheme, the time of implementation step e was controlled within the scope of 25 ~ 30 minutes.
In technique scheme, the temperature described in step b and step c in baking oven heat up be fixed point curve gradually incremental heat up, and automatically controlled by automatic controller.
In technique scheme, with the vacuum valve of vacuum pumping pump load be proportional control valve.
The good effect that the present invention has is: due to of the present invention be the load method of vacuum nitrogen filling, therefore, have the following advantages: the first, can ensure that chip back applies can be not oxidized in the process of tin cream load; The second, in tin cream, after contained solvent and scaling powder volatilization, be pulled out rapidly, and can, as floating precipitation everywhere under atmospheric pressure state, do not stain lead frame and chip; Three, the contained tin ball particle of tin cream is in vacuum state being melted completely in situation, makes chip can not form visible welding cavity, ensures the welding voidage <1% of chip.And a small amount of remaining volatilization particle originally swimming in baking oven also can be taken out to the greatest extent completely, avoid tin cream solidifying when cooling, be deposited on product surface and again stain product, and product after ensureing to solidify does not need plasma cleaning, just can carry out copper wire welding and plastic packaging operation, can output layering yet; Four, because load is under quiescent conditions always, effectively prevent that tin cream from shaking in curing cause the chip corner causing, corner that can control chip is within the scope of <1 °; Five, technique of the present invention is reasonable, and production cost is low.Realize object of the present invention.
Embodiment
Below in conjunction with the embodiment providing, the present invention is further illustrated, but be not limited to this.
A kind of chip back of the present invention applies the load method of tin cream, and having nitrogen fill valve, the vacuum pumping pump of vacuum valve and the baking oven of interior circulating fan are housed as technological equipment, with chip and chi frame, for the workpiece that sets out, and the step of described load is successively:
Step a, by chip back apply tin cream and with chi frame assembling after deliver in baking oven, opening vacuum valve vacuumizes, and nitrogen fill valve is closed, while being pressed within the scope of 0.05～0.15Pa in baking oven, open again nitrogen fill valve nitrogen injection, make the interior pressure of baking oven maintain within the scope of 0.5～0.6Pa, and circulating fan in opening;
In step a, because baking oven of the present invention is first to vacuumize to fill nitrogen again, therefore, can ensure that chip back coating tin cream can be not oxidized in the process of load;
Step b, to heating up workpiece is toasted in baking oven, and baking temperature is within the scope of 150～220 DEG C, now, the solvent that tin cream is contained and scaling powder gasification, and detach along with nitrogen is evacuated pump;
In step b, because workpiece is in negative pressure, in tin cream of the present invention, after contained solvent and scaling powder volatilization, be pulled out rapidly, and can, as floating precipitation everywhere under atmospheric pressure state, do not stain chi frame and chip;
Step c, the solvent of tin cream and scaling powder are gasified and be pulled out in situation through step b at described workpiece, temperature in baking oven is continued to heat up workpiece is toasted, when temperature to be baked is increased within the scope of 250～300 DEG C, the contained tin ball particle of described tin cream is melted;
Because the fusing point of tin is 231.9 DEG C, the present invention is increased to temperature within the scope of 250～300 DEG C, and the optimum temperature of temperature in baking oven is 275 DEG C, and is incubated 5 minutes, be in order to ensure that tin can fully be subject to heat of solution like this, prevented that unfused tin particles from existing.
In step b, c, in order to ensure not form visible welding cavity between chip and chi frame, and ensure the welding voidage <1% of chip; Original a small amount of remaining volatilization particle swimming in baking oven can be taken out to the greatest extent completely by vacuumizing, simultaneously, avoid tin cream when curing cooling, be deposited on product surface and again stain product, and ensure that the product after solidifying does not need plasma cleaning, just can carry out copper wire welding and plastic packaging operation, can output layering yet;
Steps d, the tin ball particle of tin cream is melted in situation through step c at described workpiece, stop heating and closing nitrogen fill valve and the interior circulating fan of baking oven, and continue to vacuumize, while being pressed within the scope of 0.05～0.15Pa in baking oven, again open nitrogen fill valve and interior circulating fan, make the interior pressure of baking oven remain within the scope of 0.5～0.6Pa;
Step e, at described workpiece after steps d, temperature in baking oven is lowered the temperature, temperature in baking oven is within the scope of 15～25 DEG C time, close vacuum valve, making the internal drop in baking oven is 1 standard atmospheric pressure, thereafter close nitrogen fill valve and interior circulating fan, complete the load work of chip back and chi frame welding.
The nitrogen that baking oven of the present invention is filled with contains the hydrogen of nitrogen total weight 1.5～3.5%.If that is can reduce to the tin of partial oxidation because sneak into the hydrogen of small scale, and divide residual oxygen to react with oven interior, prevent that tin is oxidized under high temperature melting state, can not be greater than 4% but hydrogen accounts for nitrogen total weight, otherwise have explosion hazard.
The time of the invention process step b was controlled within the scope of 30 ~ 45 minutes.
The time of the invention process step c was controlled within the scope of 15 ~ 20 minutes.
The time of the invention process steps d was controlled within the scope of 10 ~ 15 minutes.
The time of the invention process step e was controlled within the scope of 25 ~ 30 minutes.
It is the incremental intensification gradually of fixed point curve that temperature described in step b of the present invention and step c in baking oven heats up, and is automatically controlled by automatic controller (PLC).
The power supply of vacuum pumping pump of the present invention is opened in real time, be by vacuum valve control vacuum pump open and disconnected, and with the vacuum valve of vacuum pumping pump load be proportional control valve.
Load method of the present invention can make workpiece in curing process, be under quiescent conditions always, effectively overcome tin cream and can produce the problem of corner in chi frame rotation because flow regime causes chip before solidifying, and corner <1 ° that can control chip.
Intensification in step b of the present invention and step c in baking oven is by the PLC curve temperature control method of fixing a point, and comparing continuous tunnel furnace in prior art and reflow soldering segmentation, to transmit temperature control method more reliable and more stable.
Workpiece of the present invention is cured under vacuum nitrogen environment, can be by cross pollution, more can improving production efficiency, and be suitable for batch production.
Lab scale effect demonstration of the present invention, its effect is well-content.
Claims (8)
1. chip back applies the load method of tin cream, having nitrogen fill valve, the vacuum pumping pump of vacuum valve and the baking oven of interior circulating fan are housed as technological equipment,, it is characterized in that for the workpiece that sets out with chip and chi frame: the step of described load successively:
Step a, by chip back apply tin cream and with chi frame assembling after deliver in baking oven, opening vacuum valve vacuumizes, and nitrogen fill valve is closed, while being pressed within the scope of 0.05～0.15Pa in baking oven, open again nitrogen fill valve nitrogen injection, make the interior pressure of baking oven maintain within the scope of 0.5～0.6Pa, and circulating fan in opening;
Step b, to heating up workpiece is toasted in baking oven, and baking temperature is within the scope of 150～220 DEG C, now, the solvent that tin cream is contained and scaling powder gasification, and detach along with nitrogen is evacuated pump;
Step c, the solvent of tin cream and scaling powder are gasified and be pulled out in situation through step b at described workpiece, temperature in baking oven is continued to heat up workpiece is toasted, when temperature to be baked is increased within the scope of 250～300 DEG C, the contained tin ball particle of described tin cream is melted;
Steps d, the tin ball particle of tin cream is melted in situation through step c at described workpiece, stop heating and closing nitrogen fill valve and the interior circulating fan of baking oven, and continue to vacuumize, while being pressed within the scope of 0.05～0.15Pa in baking oven, again open nitrogen fill valve and interior circulating fan, make the interior pressure of baking oven remain within the scope of 0.5～0.6Pa;
Step e, at described workpiece after steps d, temperature in baking oven is lowered the temperature, temperature in baking oven is within the scope of 15～25 DEG C time, close vacuum valve, making the internal drop in baking oven is 1 standard atmospheric pressure, thereafter close nitrogen fill valve and interior circulating fan, complete the load work of chip back and chi frame welding.
2. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: the nitrogen that described baking oven is filled with contains the hydrogen of nitrogen total weight 1.5～3.5%.
3. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: the time of implementation step b was controlled within the scope of 30 ~ 45 minutes.
4. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: the time of implementation step c was controlled within the scope of 15 ~ 20 minutes.
5. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: the time of implementation step d was controlled within the scope of 10 ~ 15 minutes.
6. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: the time of implementation step e was controlled within the scope of 25 ~ 30 minutes.
7. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: it is the incremental intensification gradually of fixed point curve that the temperature described in step b and step c in baking oven heats up, and is automatically controlled by automatic controller.
8. chip back according to claim 1 applies the load method of tin cream, it is characterized in that: with the vacuum valve of vacuum pumping pump load be proportional control valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410113333.5A CN103839839B (en) | 2014-03-26 | 2014-03-26 | The load method of chip back coating tin cream |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410113333.5A CN103839839B (en) | 2014-03-26 | 2014-03-26 | The load method of chip back coating tin cream |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103839839A true CN103839839A (en) | 2014-06-04 |
| CN103839839B CN103839839B (en) | 2016-07-06 |
Family
ID=50803220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410113333.5A Active CN103839839B (en) | 2014-03-26 | 2014-03-26 | The load method of chip back coating tin cream |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103839839B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107309220A (en) * | 2017-06-16 | 2017-11-03 | 大连佳峰自动化股份有限公司 | A kind of slicken solder load track element |
| CN111627797A (en) * | 2020-06-08 | 2020-09-04 | 中国电子科技集团公司第二十四研究所 | Processing method for improving bonding reliability of semiconductor chip |
| CN112467019A (en) * | 2020-11-24 | 2021-03-09 | 重庆市澳欧硕铭科技有限公司 | Die bonding method for LED chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001075926A1 (en) * | 2000-03-31 | 2001-10-11 | Matsushita Electric Industrial Co., Ltd. | Production method for plasma display panel |
| CN101350296A (en) * | 2008-09-02 | 2009-01-21 | 广东风华高新科技股份有限公司 | Method for preparing crystal round back electrode and crystal round |
| CN101870447A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
| CN103100800A (en) * | 2013-03-11 | 2013-05-15 | 河南理工大学 | Paste solder for hard soldering of SiCp/Al composite material and preparation method and use method thereof |
-
2014
- 2014-03-26 CN CN201410113333.5A patent/CN103839839B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001075926A1 (en) * | 2000-03-31 | 2001-10-11 | Matsushita Electric Industrial Co., Ltd. | Production method for plasma display panel |
| CN101350296A (en) * | 2008-09-02 | 2009-01-21 | 广东风华高新科技股份有限公司 | Method for preparing crystal round back electrode and crystal round |
| CN101870447A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
| CN103100800A (en) * | 2013-03-11 | 2013-05-15 | 河南理工大学 | Paste solder for hard soldering of SiCp/Al composite material and preparation method and use method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107309220A (en) * | 2017-06-16 | 2017-11-03 | 大连佳峰自动化股份有限公司 | A kind of slicken solder load track element |
| CN111627797A (en) * | 2020-06-08 | 2020-09-04 | 中国电子科技集团公司第二十四研究所 | Processing method for improving bonding reliability of semiconductor chip |
| CN112467019A (en) * | 2020-11-24 | 2021-03-09 | 重庆市澳欧硕铭科技有限公司 | Die bonding method for LED chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103839839B (en) | 2016-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103839839A (en) | Method for assembling chip by coating back surface of chip with solder paste | |
| CN102689069A (en) | Automatic soldering machine | |
| CN104359295A (en) | Fully-automatic vacuum drying furnace | |
| CN107626929A (en) | A kind of method for preparing alloy powder | |
| CN108941562B (en) | Method and device for manufacturing metal additive by continuous powder feeding induction heating | |
| CN102950291B (en) | Production method of submicron-order tin-copper alloy powder | |
| CN105643105A (en) | Laser melting forming protection circulating dust-removing system and method | |
| CN102784742B (en) | Glue filling process for tire pressure monitoring sensor | |
| CN104319193B (en) | Fast acting fuse production technology | |
| CN104084659B (en) | Hot air welding method is adopted to prepare the production method of transistor | |
| CN104264229B (en) | A kind of online doper of single crystal growing furnace | |
| CN104416161A (en) | Method for quickly producing uniform core-shell type alloy solder balls | |
| CN206843588U (en) | A kind of twin flue powder feeder | |
| CN102328917B (en) | The two-step synthesis method of selenium gallium indium Copper thin film solar cell material | |
| CN104289386A (en) | High-temperature spinning device and method for preparing film | |
| CN103560053B (en) | A kind of method of operation of fuse solidifying equipment | |
| CN204130464U (en) | Fast acting fuse production equipment | |
| CN102581410B (en) | A kind of welding procedure of diode chip for backlight unit | |
| CN203569189U (en) | Mechanical automatic conversion device of laser cladding synchronous powder feeder | |
| CN203731869U (en) | Intermediate bin of feeding and slag discharging device of lead smelting furnace | |
| CN203900674U (en) | Vacuum-welding box for semiconductor | |
| CN104045058B (en) | A kind of controlled, non-caking unsaturated hydride preparation facilities of hydrogen richness and method | |
| CN109108274B (en) | Method for rapidly and efficiently treating tin-base alloy spherical welding powder return material | |
| CN107314669B (en) | Hydrogen tunnel furnace and ceramic circuit element processing equipment | |
| CN105529437B (en) | The method for preparing gun-metal pole piece using alloy powder |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: Changzhou Galaxy century microelectronics Limited by Share Ltd Address before: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee before: Changzhou Galaxy Century Micro-Electronics Co., Ltd. |