CN104084659B - Hot air welding method is adopted to prepare the production method of transistor - Google Patents
Hot air welding method is adopted to prepare the production method of transistor Download PDFInfo
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- CN104084659B CN104084659B CN201410311524.2A CN201410311524A CN104084659B CN 104084659 B CN104084659 B CN 104084659B CN 201410311524 A CN201410311524 A CN 201410311524A CN 104084659 B CN104084659 B CN 104084659B
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- heating
- lead frame
- welding
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- temperature district
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/012—Soldering with the use of hot gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
Abstract
A kind of production method adopting hot air welding method to prepare transistor, the mode that chip, lead frame adopt fraction gradient preheating and hot air welding to combine is welded, and in welding process, have employed the layer set-up mode of the first tack coat and the second solderable layer, eliminate the weld defect produced in welding preferably, decrease the generation of rosin joint, be the production method of the transistor that a kind of efficiency is high, quality good, cost is low simultaneously.
Description
Technical field
The present invention relates to a kind of production method of transistor, particularly relate to the production method of its high-capacity transistor.
Background technology
Power transistor is applicable to the power circuit etc. that surge easily occurs for the series voltage regulator that is made up of two chip blocks of control integrated circuit (IC) and power transistor and switching regulator and other.The main application of the chip of high-capacity transistor comprises the Switching Power Supply of household electrical appliance, as TV, microcomputer, Household induction cooker etc., also have the relevant electric equipment on automobile, as the ignition installation etc. of automobile, be also applied to each electric appliances of industrial use as dynamic Control load power source, controller, DC welder etc.But the chips welding of high-capacity transistor generally adopts the technique of manual welding, and manual welding chip inefficiency, electric energy expends greatly simultaneously, and hydrogen nitrogen protective gas waste is corresponding also many, increases operation cost, and quality conformance is poor, and efficiency is low.
Meanwhile, as everyone knows, weld layer, except provide mechanical connection or electrical connection for device except, also must provide good heat dissipation channel for device.Above-mentioned requirements cannot be realized by manual welding.
Summary of the invention
Technical problem to be solved by this invention is to provide the production method of the transistor that a kind of efficiency is high, quality good, cost is low, improves the technique of chips welding.By the welding procedure of this method, have that mechanical strength is high, thermal resistance is little, good stability, high reliability.
The present invention solves the problems of the technologies described above adopted technical scheme and specifically comprises the following steps:
First, the chip of transistor to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, chip to be welded is blowed to from upper and lower both direction, heating-up temperature is 85 DEG C, after this region keeps about 80 seconds time, the chip of transistor to be welded enters cutter second heating-up temperature region, induction heating mode is adopted in the second heating-up temperature region, the heating-up temperature in eddy-current heating stage is 105 DEG C, the time of about 60 seconds is kept in this region.
The weld defect produced in chip bonding process can be effectively reduced by the heating in two stages.Two different heating period main causes why are adopted to be, the mode heated by the thermal current of first stage can be heated in upper and lower surface simultaneously, and effectively can be blown off the pollutant at position to be welded by the mode of thermal current, be beneficial to the carrying out of welding; And in second stage by the mode of eddy-current heating can heating chip be overall uniformly, the defect that minimizing welding stress brings.In addition, the gradient-heated mode adopting the first heating-up temperature and the second heating-up temperature segmentation to improve heating-up temperature can reduce the stress defect that Fast Heating is brought.
Then, lead frame is placed in feeding transport platform, automatically pick up material on workbench by the manipulator of conputer controlled by suction dish, be transported in the track that nitrogen gas carries out protecting by the grappling member of carrying conveying, protective gas is protected in whole conveying track; First lead frame is transported by the 3rd temperature province and the 4th temperature province at track successively, wherein the 3rd heating-up temperature district adopts thermal current heating, lead frame to be welded is blowed to from upper and lower both direction, heating-up temperature is 105 DEG C, after this region keeps about 60 seconds time, the chip of transistor to be welded enters cutter the 4th heating-up temperature region, induction heating mode is adopted in the 4th heating-up temperature region, the heating-up temperature in eddy-current heating stage is 145 DEG C, keeps the time of about 80 seconds in this region.
In the welding of the transistor of prior art, most of technique improves welding quality for welding front heating to chip before welding, heating before seldom welding lead frame, before not recognizing the weldering by lead frame, heating can better eliminate the weld defect produced in welding process.By the control of heating-up temperature of two sections of gradient types and the control of retention time in the present invention, both can play the effect of weld preheating, the shock heating stress defect brought to lead frame can be avoided again.
It should be noted that, the control of heating-up temperature of two sections of gradient types of the chip of transistor to be welded and the front heating of the weldering of lead frame and the parameter value of the control of retention time are all to reach the optimal value of the parameter eliminating the front defect of weldering, all can not reach the object eliminating weld defect higher or lower than corresponding heating-up temperature or retention time preferably, also cannot ensure that parts to be welded self do not produce thermal stress.
Again, lead frame through the 3rd heating-up temperature district and the heating of the 4th heating-up temperature district is transported to the 5th operating temperature district by track, the operating temperature in the 5th operating temperature district is 180 DEG C, in this temperature province, be provided with video camera and reshaping device, whether smooth by the structure of cameras observe lead frame, if when having the phenomenons such as distortion or warpage to occur, control reshaping device and slowly micro-shaping is carried out to lead frame, until cameras observe to mechanism meet the requirements, if lead frame also cannot reach requirement after shaping, then enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in the 5th operating temperature district.
By this step, just parts to be welded are checked before weldering, decrease the generation of substandard product, reduce energy consumption, and can the speed production cycle.
Then, the qualified lead frame through heating and shaping is transported to the 6th operating temperature district, and the ambient temperature in the 6th operating temperature district is 180 DEG C.In this temperature province, first by the first tack coat coating lead frame position to be welded, and coating can welding coating on the basis of above-mentioned tack coat, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism that Ti-W composition is coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process of scolding tin material coating, utilize tin material conveyer structure to control the shape of each site portion scolding tin material coating to be welded, preferred described shape is circular, rectangle or square, the thickness of above-mentioned tack coat is about 0.01mm, can the thickness of welding coating at about 8um.
Then, the lead frame after above-mentioned steps is transported to the 7th operating temperature district, and the ambient temperature in the 7th operating temperature district is 200 DEG C.In this temperature province, chip is moved to the top of lead frame by welding grasping mechanism, and monitored by the video camera be arranged in this region, place it in the corresponding welding position of lead frame exactly, after this temperature province preheated one-section time, control to utilize welding gun to weld by controlling organization, and use alcohol rosin to help weldering, also the solder(ing) paste of reflow welding can be used, adjust rare after smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that chip is smeared after putting up again, otherwise pressure solder(ing) paste heating under the die is not incessantly melted and is easily caused short circuit.The method of welding is hot gas welding, heat gun is apart from chip 2-3 centimetre heating (attention homogeneous heating), and after melts soldering tin, air pressure gun brings up to 3-4 centimetre of continuation heating, ajusts chip simultaneously, then remove air pressure gun, compress after also needing as required chip to be set right after removing air pressure gun.Compression can prevent rosin joint, but easily causes short circuit between pin, and certain rosin joint also can solve by warding off tin from the side, but to be compacted into power higher not as hot blast blows.
Finally, the parts entirety after welding enters in the 8th humidity province, and the temperature of this humidity province is about 150 DEG C, keeps temperature about 180 seconds.Again by whole framework Self-tipping in corresponding parts storing apparatus.
By product prepared by welding method of the present invention, eliminating the weld defect produced in welding preferably, decrease the generation of rosin joint simultaneously, is the production method of the transistor that a kind of efficiency is high, quality good, cost is low.
Detailed description of the invention
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail below to specific embodiments of the invention.
Concrete steps of the present invention are as follows:
The first step, the chip of transistor to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, chip to be welded is blowed to from upper and lower both direction, heating-up temperature is 85 DEG C, after this region keeps about 80 seconds time, the chip of transistor to be welded enters cutter second heating-up temperature region, induction heating mode is adopted in the second heating-up temperature region, the heating-up temperature in eddy-current heating stage is 105 DEG C-110 DEG C, the time of about 60 seconds is kept in this region,
Second step, lead frame is placed in feeding transport platform, automatically pick up material on workbench by the manipulator of conputer controlled by suction dish, be transported in the track that nitrogen gas carries out protecting by the grappling member of carrying conveying, protective gas is protected in whole conveying track; First lead frame is transported by the 3rd temperature province and the 4th temperature province at track successively, wherein the 3rd heating-up temperature district adopts thermal current heating, lead frame to be welded is blowed to from upper and lower both direction, heating-up temperature is 105 DEG C, after this region keeps about 60 seconds time, the chip of transistor to be welded enters cutter the 4th heating-up temperature region, induction heating mode is adopted in the 4th heating-up temperature region, the heating-up temperature in eddy-current heating stage is 145 DEG C, keeps the time of about 80 seconds in this region;
3rd step, lead frame through the 3rd heating-up temperature district and the heating of the 4th heating-up temperature district is transported to the 5th operating temperature district by track, the operating temperature in the 5th operating temperature district is 180 DEG C, in this temperature province, be provided with video camera and reshaping device, whether smooth by the structure of cameras observe lead frame, if when having the phenomenons such as distortion or warpage to occur, control reshaping device and slowly micro-shaping is carried out to lead frame, until cameras observe to mechanism meet the requirements, if lead frame also cannot reach requirement after shaping, then enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in the 5th operating temperature district,
4th step, the qualified lead frame through heating and shaping is transported to the 6th operating temperature district, and the ambient temperature in the 6th operating temperature district is 180 DEG C.In this temperature province, first by the first tack coat coating lead frame position to be welded, and coating can welding coating on the basis of above-mentioned tack coat, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism that Ti-W composition is coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process of scolding tin material coating, utilize tin material conveyer structure to control the shape of each site portion scolding tin material coating to be welded, preferred described shape is circular, rectangle or square, the thickness of above-mentioned tack coat is about 0.01mm, can the thickness of welding coating at about 8um,
5th step, the lead frame after above-mentioned steps is transported to the 7th operating temperature district, and the ambient temperature in the 7th operating temperature district is 200 DEG C.In this temperature province, chip is moved to the top of lead frame by welding grasping mechanism, and monitored by the video camera be arranged in this region, place it in the corresponding welding position of lead frame exactly, after this temperature province preheated one-section time, control to utilize welding gun to weld by controlling organization, and use alcohol rosin to help weldering, also the solder(ing) paste of reflow welding can be used, adjust rare after smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that chip is smeared after putting up again, otherwise pressure solder(ing) paste heating under the die is not incessantly melted and is easily caused short circuit.The method of welding is hot gas welding, heat gun is apart from chip 2-3 centimetre heating (attention homogeneous heating), after melts soldering tin, air pressure gun brings up to 3-4 centimetre of continuation heating, ajust chip simultaneously, then air pressure gun is removed, compress after also needing as required chip to be set right after removing air pressure gun, compression can prevent rosin joint;
6th step, the parts entirety after welding enters in the 8th humidity province, and the temperature of this humidity province is about 150 DEG C, keeps temperature 180-200 second, then by whole framework Self-tipping in corresponding parts storing apparatus.
Wherein in the above-mentioned first step, the temperature of eddy-current heating can be 108 DEG C, and the 6th step keeps time of temperature to change as required, as being 190 seconds.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (3)
1. adopt hot air welding method to prepare a production method for transistor, it is characterized in that comprising the following steps:
The first step, the chip of transistor to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, chip to be welded is blowed to from upper and lower both direction, heating-up temperature is 85 DEG C, after this region keeps 80 second time, the chip of transistor to be welded enters into the second heating-up temperature district, induction heating mode is adopted in the second heating-up temperature district, the heating-up temperature in eddy-current heating stage is 105 DEG C-110 DEG C, the time of 60 seconds is kept in this region,
Second step, lead frame is placed in feeding transport platform, automatically pick up material on workbench by the manipulator of conputer controlled by suction dish, be transported in the track that nitrogen gas carries out protecting by the grappling member of carrying conveying, protective gas is protected in whole conveying track, first lead frame is transported by the 3rd heating-up temperature district and the 4th heating-up temperature district at track successively, wherein the 3rd heating-up temperature district adopts thermal current heating, lead frame to be welded is blowed to from upper and lower both direction, heating-up temperature is 105 DEG C, after this region keeps 60 second time, the chip of transistor to be welded enters into the 4th heating-up temperature district, adopts induction heating mode in the 4th heating-up temperature district, the heating-up temperature in eddy-current heating stage is 145 DEG C, keeps the time of 80 seconds in this region, 3rd step, lead frame through the 3rd heating-up temperature district and the heating of the 4th heating-up temperature district is transported to the 5th operating temperature district by track, the operating temperature in the 5th operating temperature district is 180 DEG C, in this humidity province, be provided with video camera and reshaping device, whether smooth by the structure of cameras observe lead frame, if when having distortion or warping phenomenon to occur, control reshaping device and slowly micro-shaping is carried out to lead frame, until cameras observe to the structure of lead frame meet the requirements, if lead frame also cannot reach requirement after shaping, then enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in the 5th operating temperature district,
4th step, the qualified lead frame through heating and shaping is transported to the 6th operating temperature district, and the ambient temperature in the 6th operating temperature district is 180 DEG C;
In this humidity province, first by the first tack coat coating lead frame position to be welded, and coating can welding coating on the basis of above-mentioned tack coat, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism that Ti-W composition is coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process of scolding tin material coating, utilize tin material conveyer structure to control the shape of each site portion scolding tin material coating to be welded, described shape is circular, rectangle or square,
The thickness of above-mentioned tack coat is 0.01mm, can the thickness of welding coating at 8 μm;
5th step, the lead frame after above-mentioned steps is transported to the 7th operating temperature district, and the ambient temperature in the 7th operating temperature district is 200 DEG C;
In this humidity province, by the top of welding grasping mechanism moving chip to lead frame, and monitored by the video camera be arranged in this region, place it in the corresponding welding position of lead frame exactly, after this humidity province preheated one-section time, control to utilize welding gun to weld by controlling organization, and use alcohol rosin to help weldering, also the solder(ing) paste of reflow welding can be used, adjust rare after smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that chip is smeared after putting up again, otherwise press solder(ing) paste heat fused under the die not and easily cause short circuit,
The method of welding is hot gas welding, and heat gun is apart from chip 2-3 centimetre of homogeneous heating, and after melts soldering tin, air pressure gun brings up to 3-4 centimetre of continuation heating, ajust chip simultaneously, then remove air pressure gun, compress after also needing chip to set right after removing air pressure gun, compression can prevent rosin joint;
6th step, the parts entirety after welding enters in the 8th humidity province, and the temperature of this humidity province is 150 DEG C, keeps temperature 180-200 second, then by whole framework Self-tipping in corresponding parts storing apparatus.
2. a kind of production method adopting hot air welding method to prepare transistor according to claim 1, is characterized in that the temperature of eddy-current heating in the first step is 108 DEG C.
3. a kind of production method adopting hot air welding method to prepare transistor according to claim 1, is characterized in that the 6th step keeps the time of temperature to be 190 seconds.
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| CN201410311524.2A CN104084659B (en) | 2014-07-02 | 2014-07-02 | Hot air welding method is adopted to prepare the production method of transistor |
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| CN201410311524.2A CN104084659B (en) | 2014-07-02 | 2014-07-02 | Hot air welding method is adopted to prepare the production method of transistor |
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| CN104084659B true CN104084659B (en) | 2016-04-20 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104942396A (en) * | 2015-07-15 | 2015-09-30 | 湖北泰晶电子科技股份有限公司 | High-precision temperature-control welding furnace for tuning fork crystals |
| CN105428252A (en) * | 2015-12-22 | 2016-03-23 | 常州银河世纪微电子有限公司 | Power type high-current device mounting process |
| CN106684004B (en) * | 2016-07-18 | 2019-07-05 | 浙江益中智能电气有限公司 | A kind of overall package method of power device |
| CN106229306B (en) * | 2016-07-18 | 2019-07-05 | 浙江益中智能电气有限公司 | A kind of core method in the stabilisation of power device chip |
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