CN103836409B - 一种led光源及其制备方法 - Google Patents
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Abstract
<b>本发明涉及一种</b><b>LED</b><b>光源及制备方法，属于</b><b>LED</b><b>技术领域，本发明所述的</b><b>LED</b><b>光源包括玻璃壳体，以及密封在玻璃壳体内的</b><b>LED</b><b>芯片及承载</b><b>LED</b><b>芯片的透明基板，本发明的</b><b>LED</b><b>光源制备简单，使用便捷。</b>
Description
技术领域
本发明涉及一种LED光源及其制备方法，属于LED光源制备技术领域。
背景技术
光源就是发光二极管（LED）为发光体的光源。发光二极管发明于20世纪60年代，在随后的数十年中，其基本用途是作为收录机等电子设备的指示灯。这种灯泡具有效率高、寿命长的特点，可连续使用10万小时，比普通白炽灯泡长100倍。在未来5年，这种光源将成为下一代照明的主流产品。
从发光效率角度，LED经过几十年的技术改良，其发光效率有了较大的提升。白炽灯、卤钨灯光效为12-24流明/瓦，荧光灯50～70流明/瓦，钠灯90～140流明/瓦，大部分的耗电变成热量损耗。LED光效经改良后已达到达50～200流明/瓦或更高，而且其光的单色性好、光谱窄，无需过滤可直接发出有色可见光。同时，世界各国仍然在做加紧提高LED光效方面的研究，在不远的将来其发光效率将有更大的提高。
从能源节约角度，LED单管功率0.03～0.06瓦，采用直流驱动，单管驱动电压1.5～3.5伏，电流15～18毫安，反应速度快，可在高频操作。同样照明效果的情况下，耗电量是白炽灯泡的万分之一，是荧光灯管的二分之一。据日本估计，如采用光效比荧光灯还要高两倍的LED替代日本一半的白炽灯和荧光灯。每年可节约相当于60亿升原油。就桥梁护栏灯例，同样效果的一支日光灯40多瓦，而采用LED每支的功率只有8瓦，而且可以七彩变化。
为使LED光源更简单、便捷地运用于替代传统光源，各大厂家、研发机构均在不断地对LED光源进行改进或重新设计结构，使其更符合市场需求。
发明内容
本发明提供了一种新型LED光源及其制备方法，所述的新型LED光源包括玻璃壳、两颗或两颗以上LED芯片、玻璃基板及电极、引线，LED芯片封装于玻璃基板上，被玻璃壳包封，玻璃基板表面溅镀有AlN作为散热层，并且利用ITO透光性及导电性，在需要电性导通的LED芯片与芯片之间、芯片与引线之间部位溅镀ITO作为电路图，LED芯片固定于玻璃基板的ITO上，LED芯片通过ITO电路图实现芯片与芯片之间、LED芯片与电源之间的电性导通，封装于玻璃基板的LED芯片及玻璃基板均密封在玻璃壳内，使LED芯片与外界电源电性导通的基板引线分别与电极连接，电极上的引出线与电源连接，固定LED芯片的玻璃基板密封于玻璃壳内，玻璃基板引线端及基板引线、电极及电极上的引出线被融封在玻璃壳的一端，电极上的引出线从融封的玻璃壳端向外引出。
本发明的LED芯片的P、N极分别直接固定于相应的ITO电路图上，实现电性导通连接。所述的直接固定，可以是LED芯片的P、N极通过透明导电胶与ITO固定并电性导通连接；也可以是LED芯片的P、N极通过锡膏与ITO固定，经回流焊进行电性导通连接。
本发明的LED光源，其LED芯片固定于ITO上后直接实现了芯片与芯片直接，芯片与电源之间的电性导通，所以LED芯片固定后直接在玻璃基板及LED芯片表面涂覆荧光粉，本发明的玻璃壳表面可进一步涂覆一层荧光粉层，可用于对LED芯片在工作状态下发光的二次激发，同时也因LED芯片上的部分荧光粉有可能在玻璃壳融封时受温度影响失活，在玻璃壳表面再加设一层荧光粉可以预防LED芯片所发射的光激发未完全导致的蓝光泄露。为了便于LED光源运用于不同的灯内，玻璃壳体积V，优选0.1cm3＜V＜15cm3。
本发明的LED光源其由于LED芯片的P、N极直接固定于基板的ITO上的，在后续在LED封装体上涂覆荧光粉时LED芯片的P、N极侧荧光粉涂覆不到，所以本发明所述的LED芯片，可以在LED芯片制程中，LED芯片P\N极侧在芯片切割后未裂片时对P\N极以外区域进行溅镀荧光粉。
本发明一方面为提高LED芯片在工作状态下散热，另一方面避免玻璃壳内的器件尤其是ITO免收外界环境影响，在于玻璃壳上进一步包含有一个充气、排气口，通过充气、排气口，玻璃壳内为真空或充有氮气和氦气的混合气体，充气、排气口熔融密封。由于ITO具有很强的吸水性，所以会吸收空气中的水份和二氧化碳并产生化学反应而变质，俗称“霉变”，因此以ITO作为电路的玻璃基板在封装LED芯片后，以玻璃壳作为密封材料进行密封，隔绝与外界环境接触，另一方面本发明通过对玻璃壳能进行充气可有效提高LED光源在工作状态的的热发散，降低LED芯片工作温度，玻璃壳内所充的氮气和氦气的混合气体，优选体积比为5:1-2:1之间，室温下玻璃壳内的气体压力控制在0.05-0.15MPa之间。
本发明的玻璃基板在封装LED芯片时可以不使用荧光粉，荧光粉仅在后续玻璃壳密封后均匀涂覆于密封玻璃壳表面，用于对LED芯片出光激发，通过对玻璃壳表面加设荧光粉可以有效避免荧光粉与LED芯片发热体直接接触而容易老化。玻璃壳密封处理后经冷却后在玻璃壳表面涂覆荧光粉层。
本发明LED光源的制备方法，在玻璃基板溅镀完AlN层后通过旋转进行溅镀ITO，旋转频率为40-60Hz，Sn掺杂量控制在7%-12%之间，ITO的厚度为20nm-200nm之间，氧流量控制在2-7sccm。优选Sn掺杂量控制在9%-11%之间，ITO的厚度为140nm-180nm之间，氧流量控制在3-5sccm。溅镀ITO后无退火工序。本发明一方面为使ITO溅镀层更平整并且相对透光性及电阻率能达到最优化，在溅镀过程中本发明人研究发现在溅镀过程中玻璃基板保存40-60Hz的频率溅镀效果达到最佳，另一方面由于本发明的玻璃基板在溅镀ITO前其上面已经镀有一层AlN层，确切地讲，本发明的ITO电路是溅镀于AlN层上的，由于AlN层的存在,在ITO整个制备过程中其温度都不能超过300℃，一旦超过300℃，AlN层将会影响玻璃基板的光透性，但在一般玻璃基板溅镀ITO制备过程中均进行退火工序以此降低ITO表面的粗糙度、电阻率，提高ITO的光透性，并经研究发现ITO退火的工序温度越高所制备出的ITO光电效果越佳，尤其当达到450℃时，但是针对本发明由于与传统的玻璃基板制备ITO不同是在AlN层上制备ITO，所以本发明发明人在ITO过程中加入旋转电镀的方式，来提高ITO的光电性能，省略后续的退火工序，同时省略后续的退火工序也降低了退火工序带来的ITO中Sn、In变价的风险，有效控制了ITO光电性能的稳定性。本发明的发明人发现ITO在溅镀的过程中In2O3和SnO2有部分会分解成低价的氧化物，这些氧化物对于ITO膜的光透性、电阻率和成膜粗糙度有影响（低价氧化物迁移率低，会造成不同区域ITO成膜速率不同，最终出现粗糙或者黑点）。氧流量过高会造成电阻上升，氧流量过低又会造成穿透率下降和成膜黑点、粗糙。所以通氧时要兼顾电阻和光透性及粗糙的问题，而这三者与通氧量相关，方向相反，所以通氧不能太多，也不能不通，需要调整到一个最佳的参数，进而得到透光性、电阻、形态较好的ITO，本发明的发明人经无数次实验发现本发明ITO制备过程中当氧流量控制在2-7sccm，优选3-5sccm时，能得到透光性、电阻率、形态等相对参数最佳的ITO电路。
附图说明
本发明的附图是为了对本发明进一步说明，而非对本发明发明范围的限制。
图1、LED芯片、透明基板上均涂覆有均匀的荧光粉的LED封装体示意图
图2、LED芯片上涂覆有均匀的荧光粉的LED封装体示意图
图3、LED芯片直接固定于ITO电路图上的示意图
图4、引线端融封的LED光源
图5、引线端融封封装体涂覆有荧光粉的LED光源
图6、带有充气、排气口的LED光源
图7、带有充气、排气口玻璃罩表面涂覆荧光粉的LED光源
1、为LED芯片；1'、为涂覆有荧光粉的LED芯片；2、为玻璃基板；2'、为涂覆有荧光粉的玻璃基板；3、为玻璃壳；3'、为涂覆用荧光粉的融封玻璃壳；4、为玻璃壳融封部位；5、为电极；6、为引线；7、为排气、充气口；7’、为涂覆有荧光粉的排气、充气口；8、为涂覆有荧光粉的玻璃基板；8'、为未涂覆荧光粉的玻璃基板；9、为涂覆有荧光粉的芯片；9'、为未涂覆荧光粉的芯片；10为蒸镀于基板表面的ITO。
具体实施方式
本发明的实施例是为了对本发明进一步说明，而非对本发明的发明范围的限制。
实施例
取玻璃基板进行乙醇清洗后在玻璃基板表面溅镀AlN层，随后直接在AlN层上需要电性导通的LED芯片与芯片之间、芯片与引线之间部位旋转溅镀ITO作为电路，通过光刻胶遮掩遮住不需要溅镀部位，使ITO与ITO电路之间互不导通，玻璃基板的旋转频率为50Hz，Sn掺杂量控制在10%左右，ITO的厚度为160nm，氧流量控制在5sccm，溅镀完ITO后去除光刻胶，在各ITO电路两端分别固定一个LED芯片的P极和另一个LED芯片的N极，LED芯片为在LED芯片制程中，LED芯片P\N极侧在芯片切割未裂片时对P\N极以外区域进行溅镀荧光粉后再进行裂片所得的LED芯片。各LED芯片使ITO与ITO电路之间相互电性导通，对固定完的LED芯片表面及玻璃基板各表面进行涂覆荧光粉，把封装好LED芯片的玻璃基板与玻璃壳一端熔融固定，并在玻璃壳融封部位引出引线，通过玻璃壳另一端的充气、排气口对玻璃壳进行抽真空并充入氮气和氦气的混合气体，使氮气和氦气的体积比为5:1-2:1之间，并控制玻璃壳在室温下的气体压力为0.05-0.15MPa之间，最后对玻璃壳的排气、充气口进行融封处理。在玻璃壳表面再涂覆均匀的荧光粉层。
Claims (15)
1.一种LED光源，包括玻璃壳、两颗或两颗以上LED芯片、玻璃基板及电极、引线，LED芯片封装于玻璃基板上，被玻璃壳包封，玻璃基板表面溅镀有AlN作为散热层，需要电性导通的LED芯片与芯片之间、芯片与引线之间部位溅镀ITO作为电路图，LED芯片固定于玻璃基板的ITO上，LED芯片通过ITO电路图实现芯片与芯片之间、LED芯片与电源之间的电性导通，其特征在于：
所述玻璃基板进行乙醇清洗后溅镀AlN层；溅镀完AlN后直接在AlN层上需要电性导通的LED芯片与芯片之间、芯片与引线之间部位溅镀ITO作为电路，ITO与ITO电路之间互不导通；
所述ITO电路的两端分别固定一个LED芯片的P极和另一个LED芯片的N极；所述ITO与ITO电路之间通过固定的LED芯片相互导通；所述固定完的LED芯片表面及玻璃基板的各表面还涂覆有荧光粉；
封装好LED芯片的玻璃基板与玻璃壳熔封固定，并在玻璃壳融封部位引出引线。
2.根据权利要求1所述的LED光源，其特征在于LED芯片的P、N极分别直接固定于相应的ITO电路图上，实现电性导通连接。
3.根据权利要求2所述的LED光源，其特征在于LED芯片的P、N极通过透明导电胶与ITO固定并电性导通连接。
4.根据权利要求2所述的LED光源，其特征在于LED芯片的P、N极通过锡膏与ITO固定并电性导通连接。
5.根据权利要求1所述的LED光源，其特征在于所述的玻璃壳表面涂覆有荧光粉层，玻璃壳体积V，0.1cm3＜V＜15cm3。
6.根据权利要求1所述的LED光源，其特征在于玻璃壳上进一步包含有一个充气、排气口，通过充气、排气口，玻璃壳内为真空或充有氮气和氦气的混合气体，充气、排气口熔融密封。
7.根据权利要求1所述的LED光源，其特征在于所述的玻璃基板在封装LED芯片时未使用荧光粉，荧光粉均匀涂覆于密封玻璃壳表面。
8.一种LED光源的制备方法，其特征在于：
选择玻璃基板进行乙醇清洗后溅镀AlN层；
溅镀完AlN后直接在AlN层上需要电性导通的LED芯片与芯片之间、芯片与引线之间部位溅镀ITO作为电路，ITO与ITO电路之间互不导通；
在ITO电路两端分别固定一个LED芯片的P极和另一个LED芯片的N极；
ITO与ITO电路之间通过固定的LED芯片相互导通；
对固定完的LED芯片表面及玻璃基板各表面进行涂覆荧光粉；
把封装好LED芯片的玻璃基板与玻璃壳熔封固定，并在玻璃壳融封部位引出引线。
9.根据权利要求8所述的LED光源的制备方法，其特征在于玻璃基板通过旋转进行溅镀ITO，旋转频率为40-60Hz，Sn掺杂量控制在7％-12％之间，ITO的厚度为20nm-200nm之间，氧流量控制在2-7sccm，溅镀ITO后无退火工序。
10.根据权利要求9所述的LED光源的制备方法，其特征在于Sn掺杂量控制在9％-11％之间，ITO的厚度为140nm-180nm之间，氧流量控制在3-5sccm。
11.根据权利要求8所述的LED光源的制备方法，其特征在于LED芯片的P/N极与ITO电路之前是通过透明的导电胶固定或者通过锡焊经回流焊固定。
12.根据权利要求8所述的LED光源的制备方法，其特征在于玻璃壳上进一步包含有一个充气、排气口，玻璃壳在引线端熔封后，通过充气、排气口，玻璃壳内为真空或充有氮气和氦气的混合气体，充气、排气口熔融密封。
13.根据权利要求12所述的LED光源的制备方法，其特征在于玻璃壳内充的氮气和氦气的混合气体，体积比为5:1-2:1之间，室温下玻璃壳内的气体压力控制在0.05-0.15MPa之间。
14.根据权利要求8所述的LED光源的制备方法，其特征在于所述的LED芯片，为在LED芯片制程中，LED芯片P/N极侧在芯片切割未裂片时对P/N极以外区域进行溅镀荧光粉。
15.根据权利要求8所述的制备方法，其特征在于玻璃壳密封处理后经冷却后在玻璃壳表面涂覆荧光粉层。
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| CN105355623A (zh) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | 一种基于透明陶瓷基板的led灯丝 |
| CN105355755A (zh) * | 2015-10-31 | 2016-02-24 | 嘉兴市上村电子有限公司 | 一种基于玻璃基板的led灯丝 |
| DE102016122228A1 (de) * | 2016-11-18 | 2018-05-24 | Ledvance Gmbh | Leuchtmittel für eine LED-Lampe und LED-Lampe |
| CN107035980A (zh) * | 2017-05-05 | 2017-08-11 | 惠州市圣士照明有限公司 | 一种具有充气止回结构的led灯泡 |
| CN115300098A (zh) * | 2022-08-08 | 2022-11-08 | 深圳市利孚医疗技术有限公司 | 一种散热优化的高功率led光源模块 |
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| CN101988637A (zh) * | 2009-07-31 | 2011-03-23 | 歌尔声学股份有限公司 | 白光led光源、其制备方法及应用该白光led光源的路灯 |
| CN102054918A (zh) * | 2009-11-09 | 2011-05-11 | 深圳市瑞丰光电子股份有限公司 | 一种led封装方法及led装置 |
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| CN202281062U (zh) * | 2011-08-29 | 2012-06-20 | 浙江锐迪生光电有限公司 | 一种LED芯片4π出光的高显色指数LED灯泡 |
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| CN202834825U (zh) * | 2012-06-21 | 2013-03-27 | 浙江锐迪生光电有限公司 | 一种泡壳与排气管直接熔封并充气的led灯 |
| CN202834823U (zh) * | 2012-06-21 | 2013-03-27 | 浙江锐迪生光电有限公司 | 泡壳与装有led的玻璃管及排气管直接熔封并充气的led灯 |
| CN203103340U (zh) * | 2012-09-13 | 2013-07-31 | 上海祥羚光电科技发展有限公司 | 蓝光led搭配静电喷涂荧光罩的封装结构 |
| CN103337579A (zh) * | 2013-06-03 | 2013-10-02 | 高波 | 玻璃陶瓷透明基板双面立体发光led封装 |
| CN203553166U (zh) * | 2013-11-18 | 2014-04-16 | 上海亚浦耳照明电器有限公司 | 一种新型led光源 |
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