CN103825195A - Broadband tunable light parameter oscillator pumping by use of vertical external cavity surface emitting laser - Google Patents
Broadband tunable light parameter oscillator pumping by use of vertical external cavity surface emitting laser Download PDFInfo
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- CN103825195A CN103825195A CN201410001836.3A CN201410001836A CN103825195A CN 103825195 A CN103825195 A CN 103825195A CN 201410001836 A CN201410001836 A CN 201410001836A CN 103825195 A CN103825195 A CN 103825195A
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Abstract
The invention discloses a broadband tunable light parameter oscillator pumping by use of a vertical external cavity surface emitting laser. The broadband tunable light parameter oscillator comprises a pumping source for supplying pump light, a semiconductor chip for emitting a light beam under the excitation of the pump light, and an external mirror assembly which is disposed on the emission optical path of the semiconductor chip for tuning the light beam. The external mirror assembly comprises a first reflector for reflecting the light beam emitted by the semiconductor chip, a second reflector arranged to be right opposite to the first reflector to form a first resonant cavity, and a birefringence filter sheet for performing primary tuning on a light beam between the first reflector and the second reflector. According to the broadband tunable light parameter oscillator pumping by use of the vertical external cavity surface emitting laser, an external mirror assembly is employed to combine with semiconductor chips made of different materials so that the emission wavelength scope is wide, the wide wave band from invisible light to near infrared rays is covered, the light beam is of high quality, the tuning scope can be several nanometers, and the application demand can be satisfied.
Description
Technical field
The present invention relates to a kind of generating device of laser, relate in particular to a kind of wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping.
Background technology
Vertical external cavity emitting laser is one of research topic that current optoelectronic areas is more popular as Semiconductor Laser, compared with edge-emission semiconductor laser, vertical external cavity emitting laser is high with its Output optical power, good beam quality and the feature that is easy to two-dimensional array are with a wide range of applications in fields such as laser display, laser communication, materials processing, medical treatment and defence engineerings.Existing vertical external cavity emitting laser is mainly to work under optical pumping energisation mode, and roughly undertaken tuning by following several modes: one, use mechanical movable part, if diffraction grating or microelectromechanical systems etc. are as the system of wavelength regulation unit, the problem of its existence is that tuning range is limited, is not suitable for being applied in optical fiber communication; Two, by regulating temperature, heating or cooling-part are selected the system of wavelength, the problem of its existence be by thermal tuning because of its intrinsic characteristic, tuned speed is slow, applicable scope is very little; Therefore,, for addressing the above problem, need a kind of generating device of laser that can obtain larger wave-length coverage, to meet use needs.
Summary of the invention
In view of this, the object of this invention is to provide a kind of wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping, its emission wavelength ranges is wide, cover from visible ray near infrared broad wave band, its beam quality is good, and there is the tuning range of tens of nm, can meet use needs.
Wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping of the present invention, comprise pumping source for pump light is provided, for issue out the semiconductor chip of light beam in the excitation of described pump light and be located on the emitting light path of described semiconductor chip for its light beam being carried out to tuning outer border assembly; Described outer border assembly comprise the light beam sending for reflective semiconductor chip the first speculum, and the first speculum just to arrange form the first resonant cavity the second speculum and for the light beam between the first speculum and the second speculum is carried out once to tuning birefringent filter;
Further, described outer border assembly also comprise on the emitting light path of being located at the second speculum for the emergent light of the second speculum is coupled output outgoing mirror, carry out the tuning nonlinear crystal of secondary for the light beam between the second speculum and outgoing mirror;
Further, described external diameter assembly also comprise the spectroscope be located between the second speculum and nonlinear crystal and with spectroscope just to the 3rd speculum that forms the second resonant cavity is set;
Further, described the first speculum, the second speculum and the 3rd speculum are broadband mirrors and are concave mirror;
Further, described semiconductor chip comprises and can launch the multiple quantum well active layer of the light beam with certain wavelength and for the bragg reflection layer to multiple quantum well active layer outside by the beam reflection of this multiple quantum well active layer transmitting;
Further, described semiconductor chip also comprises heat sink and high potential barrier Window layer; Heat sink, bragg reflection layer, multiple quantum well active layer and high potential barrier Window layer are superimposed fixing in order;
Further, the described wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping also comprises collimating lens and the condenser lens be located between pumping source and semiconductor chip.
The invention has the beneficial effects as follows: the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping of the present invention, utilize outer border assembly can make emission wavelength ranges wide in conjunction with the semiconductor chip of unlike material, cover from visible ray near infrared broad wave band, its beam quality is good, and there is the tuning range of tens of nm, can meet use needs.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Fig. 1 is structural representation of the present invention, as shown in the figure: the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping of the present embodiment, comprise pumping source 1 for pump light is provided, for issue out the semiconductor chip 2 of light beam in the excitation of described pump light and be located on the emitting light path of described semiconductor chip 2 for its light beam being carried out to tuning outer border assembly; Described outer border assembly comprise the light beam sending for reflective semiconductor chip 2 the first speculum 3, and the first speculum 3 just to arrange form the first resonant cavity the second speculum 4 and for the light beam between the first speculum 3 and the second speculum 4 is carried out once to tuning birefringent filter 5; Angle between the emitting light path of the optical axis of the first speculum 3 and semiconductor chip 2 is between 5-60 degree; Making it light beam between the first speculum 3 to second speculums 4 by rotation birefringent filter 5 is different angles and can narrows the laser linewidth as the external cavity emitting laser of pumping source 1, carry out tuning to it simultaneously, can make emission wavelength ranges wide in conjunction with the semiconductor chip 2 of unlike material, cover from visible ray near infrared broad wave band, its beam quality is good, and has the tuning range of tens of nm.
In the present embodiment, described outer border assembly also comprise on the emitting light path of being located at the second speculum 4 for the emergent light of the second speculum 4 is coupled output outgoing mirror 6, for the light beam between the second speculum 4 and outgoing mirror 6 is carried out to the tuning nonlinear crystal of secondary 7; The phase matched of parametric oscillation is provided by nonlinear crystal 7, carries out tuning to the angle between the light beam between outgoing mirror 6 to parametric oscillation by changing nonlinear crystal 7 and the second speculum 4 simultaneously; Angle between the line of outgoing mirror 6 to second speculums 4 and the optical axis of the second speculum 4 is between 5-60 degree, and in the present embodiment, the line of outgoing mirror 6 to second speculums 4 is parallel with the emitting light path of semiconductor chip 2; By birefringent filter, the external cavity emitting laser as parametric oscillation pumping source is carried out once tuningly, then angle by nonlinear crystal changes that parametric oscillation is carried out to secondary is tuning, greatly increased the tuning range of Output of laser.
In the present embodiment, described external diameter assembly also comprise the spectroscope 8 be located between the second speculum 4 and nonlinear crystal 7 and with spectroscope 8 just to the 3rd speculum 9 that forms the second resonant cavity is set; Make constantly to breed along the photon of axis operation, in chamber, form the strong beam that the direction of propagation is consistent, frequency is identical with phase place.
In the present embodiment, described the first speculum 3, the second speculum 4 and the 3rd speculum 9 are broadband mirrors and are concave mirror; The high reflectance in broadband is provided; The second broadband mirrors plays simultaneously light beam is converged to the effect on nonlinear crystal 7.
In the present embodiment, described semiconductor chip 2 comprises can launch the multiple quantum well active layer 10 of the light beam with certain wavelength and for the bragg reflection layer 11 to multiple quantum well active layer outside by the beam reflection of this multiple quantum well active layer transmitting; Bragg reflection layer 11 can provide the high reflectance of 100nm scope; By changing the material component of quantum well and the width of quantum well in external cavity emitting laser, can change parametric oscillation pumping light wavelength on a large scale, thereby obtain covering the very wide parametric oscillation output of wave-length coverage.
In the present embodiment, described semiconductor chip 2 also comprises heat sink 12 and high potential barrier Window layer 13; Heat sink 12, bragg reflection layer 11, multiple quantum well active layer 10 and high potential barrier Window layer 13 are superimposed fixing in order; The surface non-radiative that high potential barrier Window layer 13 can prevent charge carrier is compound, improves the quantum efficiency of laser; Between bragg reflection layer 11 and heat sink 12, be welded and fixed, thermal conductivity is high, is beneficial to heat radiation.
In the present embodiment, the described wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping also comprises collimating lens 14 and the condenser lens 15 be located between pumping source 1 and semiconductor chip 2; Pump light can be collimated and focuses on the gain media of multiple quantum well active layer 10.
Finally explanation is, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can modify or be equal to replacement technical scheme of the present invention, and not departing from aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (7)
1. with a wideband adjustable optical parametric oscillator for vertical external cavity emitting laser pumping, it is characterized in that: comprise pumping source for pump light is provided, for issue out the semiconductor chip of light beam in the excitation of described pump light and be located on the emitting light path of described semiconductor chip for its light beam being carried out to tuning outer border assembly; Described outer border assembly comprise the light beam sending for reflective semiconductor chip the first speculum, and the first speculum just to arrange form the first resonant cavity the second speculum and for the light beam between the first speculum and the second speculum is carried out once to tuning birefringent filter.
2. the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping according to claim 1, is characterized in that: described outer border assembly also comprises the outgoing mirror of exporting for the emergent light of the second speculum be coupled on the emitting light path of being located at the second speculum, carries out the tuning nonlinear crystal of secondary for the light beam between the second speculum and outgoing mirror.
3. the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping according to claim 2, is characterized in that: described external diameter assembly also comprise the spectroscope be located between the second speculum and nonlinear crystal and with spectroscope just to the 3rd speculum that forms the second resonant cavity is set.
4. the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping according to claim 3, is characterized in that: described the first speculum, the second speculum and the 3rd speculum are broadband mirrors and are concave mirror.
5. according to the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping described in the arbitrary claim of claim 1-4, it is characterized in that: described semiconductor chip comprises can launch the multiple quantum well active layer of the light beam with certain wavelength and for the bragg reflection layer to multiple quantum well active layer outside by the beam reflection of this multiple quantum well active layer transmitting.
6. the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping according to claim 5, is characterized in that: described semiconductor chip also comprises heat sink and high potential barrier Window layer; Heat sink, bragg reflection layer, multiple quantum well active layer and high potential barrier Window layer are superimposed fixing in order.
7. the wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping according to claim 6, is characterized in that: the described wideband adjustable optical parametric oscillator with vertical external cavity emitting laser pumping also comprises collimating lens and the condenser lens be located between pumping source and semiconductor chip.
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| CN201410001836.3A CN103825195A (en) | 2014-01-02 | 2014-01-02 | Broadband tunable light parameter oscillator pumping by use of vertical external cavity surface emitting laser |
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| CN201410001836.3A CN103825195A (en) | 2014-01-02 | 2014-01-02 | Broadband tunable light parameter oscillator pumping by use of vertical external cavity surface emitting laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283103A (en) * | 2014-09-23 | 2015-01-14 | 中国科学院苏州生物医学工程技术研究所 | Optical parametric oscillator capable of outputting wide-waveband and tunable continuous waves with wave length of 530-780 nm |
| CN108123355A (en) * | 2017-12-21 | 2018-06-05 | 暨南大学 | A kind of laser system of Wavelength tunable |
| CN108598864A (en) * | 2018-01-21 | 2018-09-28 | 重庆师范大学 | Utilize the tunable mid-infrared laser device of the broadband of surface-emitting laser difference frequency |
| CN109752896A (en) * | 2019-03-28 | 2019-05-14 | 山西大学 | A kind of cascade etalon filtering system and method for OPO modeling |
| RU208176U1 (en) * | 2021-06-09 | 2021-12-07 | Акционерное общество "Стелла-К" | On-board aviation optoelectronic countermeasures system for individual protection of an aircraft from guided missiles with an optical homing head |
| CN116473507A (en) * | 2023-06-21 | 2023-07-25 | 季华实验室 | Eye movement tracking structure |
| CN117578183A (en) * | 2023-12-12 | 2024-02-20 | 重庆师范大学 | High-performance single-frequency laser |
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| US20060251140A1 (en) * | 2005-05-07 | 2006-11-09 | Samsung Electronics Co., Ltd. | End-pumped vertical external cavity surface emitting laser |
| CN102570290A (en) * | 2011-12-07 | 2012-07-11 | 北京工业大学 | High-power intracavity frequency-doubled semiconductor disk laser |
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| US20060251140A1 (en) * | 2005-05-07 | 2006-11-09 | Samsung Electronics Co., Ltd. | End-pumped vertical external cavity surface emitting laser |
| CN102570290A (en) * | 2011-12-07 | 2012-07-11 | 北京工业大学 | High-power intracavity frequency-doubled semiconductor disk laser |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283103A (en) * | 2014-09-23 | 2015-01-14 | 中国科学院苏州生物医学工程技术研究所 | Optical parametric oscillator capable of outputting wide-waveband and tunable continuous waves with wave length of 530-780 nm |
| CN108123355A (en) * | 2017-12-21 | 2018-06-05 | 暨南大学 | A kind of laser system of Wavelength tunable |
| CN108598864A (en) * | 2018-01-21 | 2018-09-28 | 重庆师范大学 | Utilize the tunable mid-infrared laser device of the broadband of surface-emitting laser difference frequency |
| CN109752896A (en) * | 2019-03-28 | 2019-05-14 | 山西大学 | A kind of cascade etalon filtering system and method for OPO modeling |
| RU208176U1 (en) * | 2021-06-09 | 2021-12-07 | Акционерное общество "Стелла-К" | On-board aviation optoelectronic countermeasures system for individual protection of an aircraft from guided missiles with an optical homing head |
| CN116473507A (en) * | 2023-06-21 | 2023-07-25 | 季华实验室 | Eye movement tracking structure |
| CN116473507B (en) * | 2023-06-21 | 2023-09-12 | 季华实验室 | Eye movement tracking structure |
| CN117578183A (en) * | 2023-12-12 | 2024-02-20 | 重庆师范大学 | High-performance single-frequency laser |
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Application publication date: 20140528 |