CN117578183A - High-performance single-frequency laser - Google Patents
High-performance single-frequency laser Download PDFInfo
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- CN117578183A CN117578183A CN202311698492.1A CN202311698492A CN117578183A CN 117578183 A CN117578183 A CN 117578183A CN 202311698492 A CN202311698492 A CN 202311698492A CN 117578183 A CN117578183 A CN 117578183A
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- 230000005855 radiation Effects 0.000 claims abstract description 24
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- 239000011241 protective layer Substances 0.000 claims description 8
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
Abstract
The invention belongs to the technical field of single-frequency lasers, and particularly discloses a high-performance single-frequency laser which comprises a semiconductor epitaxial wafer, a pumping source, a folding mirror, a mode control element, a wavelength tuning element and an output mirror. The semiconductor epitaxial wafer, the folding mirror and the output mirror form a laser resonant cavity, stimulated radiation forms laser oscillation under the action of the laser resonant cavity, the mode control element is used for controlling a longitudinal mode in the laser resonant cavity and realizing a single longitudinal mode, and the wavelength tuning element is used for tuning laser wavelength. The semiconductor epitaxial wafer with the broadband gain and high power characteristics is used as a laser gain medium, and the mode control element and the wavelength tuning element are combined to perform laser mode selection, linewidth compression and wavelength tuning, so that the high-performance single-frequency laser with the characteristics of high power, narrow linewidth and wide tuning parameters is obtained.
Description
Technical Field
The invention belongs to the technical field of single-frequency lasers, and particularly relates to a high-performance single-frequency laser.
Background
Since 1960, laser technology and laser application research has been rapidly developed after successful laser irradiation of the first ruby laser, with high performance single frequency laser sources being favored in some special application areas. For example: the line width of the light source is required to be smaller than the atomic spectrum line width in applications such as atomic cooling and sodium star guiding, and the laser wavelength is required to be tunable for precise alignment with the atomic emission line. In Square 16QAM vector modulated coherent optical communication, in order to obtain a lower error rate, the linewidth of the laser should be less than 50kHz, and as the vector modulation increases, the requirement for the linewidth of the laser is higher. Second, in order to pursue longer transmission distances and transmission capacities, coherent optical communication is often combined with dense wavelength division multiplexing (Dense Wavelength Division Multiplexing, DWDM), requiring tunable laser wavelength ranges. In the fields of laser radar and precision measurement, the narrower the line width of a laser is, the better the line width of the laser is, and the output wavelength is required to be tunable in order to expand the measurement range and improve the measurement accuracy. In addition, in order to facilitate the extraction and detection of laser signals, the above application also has a certain requirement on the output power of the laser.
However, for most lasers there are difficulties in having high performance parameters of high power, narrow linewidth, wide tuning, etc. For example: the solid laser can realize high-power single-frequency operation under the action of the frequency selection element, but most solid lasers are limited by the characteristics of gain materials, and have small lasing wavelength coverage range and smaller wavelength tuning range. Vertical-Cavity Surface-Emitting Lasers (VCSELs) can directly output in a single longitudinal mode due to the laser Cavity length in the μm order, and the line width is usually larger than MHz, but the output power of a single VCSEL is limited by the smaller number of quantum wells and higher thermal effect, and the value is usually smaller than 1mW. In laser wavelength tuning, single mode VCSELs can only reach a few nanometers in tuning range, in addition to MEMS-VCSELs or nematic liquid crystal VCSELs. Stimulated brillouin lasers and distributed feedback lasers with narrow band gain characteristics can achieve linewidths at kHz and MHz levels, respectively, but are limited in tuning range and output power.
Disclosure of Invention
The invention aims to provide a high-performance single-frequency laser so as to solve the problem that the existing single-frequency laser is difficult to realize high-performance parameters such as high power, narrow linewidth, wide tuning and the like. The single-frequency laser in the technical scheme can realize high-power, wide tuning and narrow linewidth output at the same time, and provides a high-performance light source for the fields of atomic cooling, laser radar, precise measurement and the like.
In order to achieve the above purpose, the technical scheme of the invention is as follows: a high-performance single-frequency laser comprises a pumping source, a semiconductor epitaxial wafer, a folding mirror, a mode control element, a wavelength tuning element and an output mirror; the pumping source is used for emitting pumping light to the semiconductor epitaxial wafer, and the semiconductor epitaxial wafer is used for absorbing the energy of the pumping light and generating stimulated radiation for the wavelength of the pumping light; the folding mirror is used for reflecting stimulated radiation reflected by the semiconductor epitaxial wafer to the output mirror; the output mirror is used for outputting single-frequency laser; the mode control element and the wavelength tuning element are arranged between the folding mirror and the output mirror; a laser resonant cavity is formed among the semiconductor epitaxial wafer, the folding mirror and the output mirror, and the stimulated radiation forms laser oscillation under the action of the laser resonant cavity; the mode control element is used for controlling the longitudinal mode in the laser resonant cavity and realizing a single longitudinal mode; the wavelength tuning element is used for tuning the laser wavelength, and the wavelength tuning element can rotate.
Further, the semiconductor epitaxial wafer comprises a reflection area and an active area which are sequentially arranged, wherein the reflection area is used for reflecting the stimulated radiation, and the active area is used for providing light amplification for the stimulated radiation.
Further, the mode control element includes a first reflective layer, a variable thickness layer, and a second reflective layer disposed in sequence, the first and second reflective layers being configured to reflect the laser wavelength.
Further, the wavelength tuning element is disposed within the laser resonator at a brewster angle.
Further, the wavelength tuning element can rotate about a normal line of a plane in which the wavelength tuning element is located.
Further, the semiconductor epitaxial wafer further comprises a protective layer, and the protective layer is used for preventing the semiconductor epitaxial wafer from being oxidized.
Further, the variable thickness layer may vary from 0.15mm to 0.6mm.
Further, the semiconductor epitaxial wafer comprises a heat sink, wherein the semiconductor epitaxial wafer is fixed on the heat sink, and the heat sink is used for radiating heat of the semiconductor epitaxial wafer.
Further, the folding mirror is plated with a high-reflection film layer for reflecting the laser wavelength.
Further, the output mirror is coated with a transmission layer that transmits the laser wavelength.
The working principle of the technical scheme is as follows: an active region in the semiconductor epitaxial wafer absorbs the energy of the pump light, producing stimulated radiation. The stimulated radiation forms laser oscillation under the combined action of a laser resonant cavity formed by the semiconductor epitaxial wafer, the folding mirror and the output mirror. By utilizing the property that the linewidth of laser is inversely proportional to the length of the resonant cavity, the length of the laser resonant cavity is reasonably optimally designed to prolong the service life of photons in the cavity, and the mode control element and the wavelength tuning element are combined to perform laser mode selection and linewidth compression, so that high-power, narrow linewidth and wide tuning output are realized.
The beneficial effects of this technical scheme lie in: the semiconductor epitaxial wafer with the broadband gain and high power characteristics is used as a laser gain medium, the property that the laser linewidth is inversely proportional to the length of the resonant cavity is utilized, the length of the laser resonant cavity is reasonably optimally designed, the service life of photons in the cavity is prolonged, and the mode control element and the wavelength tuning element are combined to perform laser mode selection and linewidth compression, so that high power, narrow linewidth and wide tuning output are simultaneously realized. The invention can solve the problem that the existing single-frequency laser is difficult to realize high-performance parameters such as high power, narrow linewidth, wide tuning and the like.
Drawings
FIG. 1 is a schematic diagram of a high performance single frequency laser of the present invention;
fig. 2 is a schematic diagram of the semiconductor epitaxial wafer of fig. 1;
fig. 3 is a schematic diagram of the mode control element of fig. 1.
Detailed Description
The following is a further detailed description of the embodiments:
reference numerals in the drawings of the specification include: a heat sink 1, a semiconductor epitaxial wafer 2, a pump source 3, a fold mirror 4, a mode control element 5, a wavelength tuning element 6, an output mirror 7, a reflective region 8, an active region 9, a protective layer 10, a first reflective layer 11, a variable thickness layer 12, a second reflective layer 13.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
An example is substantially as shown in figure 1: a high-performance single-frequency laser comprises a heat sink 1, a pump source 3, a semiconductor epitaxial wafer 2, a folding mirror 4, a mode control element 5, a wavelength tuning element 6 and an output mirror 7. The pump source 3 is used for emitting pump light onto the semiconductor epitaxial wafer 2, the pump source 3 provides pumping energy for stimulated radiation, and the pump source 3 is a semiconductor laser diode with wavelength smaller than the laser wavelength. The semiconductor epitaxial wafer 2 is fixed on the heat sink 1, and the heat sink 1 is used for radiating heat of the semiconductor epitaxial wafer 2. The semiconductor epitaxial wafer 2 is used to absorb the energy of the pump light and to generate stimulated radiation for the wavelength of the pump light. The folding mirror 4 is used for reflecting the stimulated radiation reflected by the semiconductor epitaxial wafer 2 to the output mirror 7, and a high-reflection film layer for reflecting the laser wavelength is plated on the folding mirror 4. The output mirror 7 is used for outputting single-frequency laser, and a transmission layer which transmits the laser wavelength is plated on the output mirror 7 and has a certain transmittance.
As shown in fig. 2, the semiconductor epitaxial wafer 2 includes a reflective region 8, an active region 9 and a protective layer 10, which are sequentially disposed, the reflective region 8 is configured to reflect stimulated radiation, the reflective region 8 is a high reflective layer, and the reflective region 8 adopts a broadband high-reflectivity design to provide high reflectivity for the stimulated radiation, thereby functioning as a broadband reflector. The active region 9 is of semiconductor material and is designed to provide optical amplification for stimulated radiation using a multiple quantum well design. The protective layer 10 is used to prevent oxidation of the semiconductor epitaxial wafer 2. The mode control element 5 and the wavelength tuning element 6 are arranged between the folding mirror 4 and the output mirror 7; a laser resonant cavity is formed among the semiconductor epitaxial wafer 2, the folding mirror 4 and the output mirror 7, and the stimulated radiation forms laser oscillation under the action of the laser resonant cavity.
The mode control element 5 is configured to control a longitudinal mode in the laser resonator and implement a single longitudinal mode, and as shown in fig. 3, the mode control element 5 includes a first reflective layer 11, a variable thickness layer 12, and a second reflective layer 13, which are sequentially disposed, where the first reflective layer 11 and the second reflective layer 13 are configured to reflect a laser wavelength, and the first reflective layer 11 and the second reflective layer 13 are both coated with a reflective film layer having a certain reflectivity for the laser wavelength. The variable thickness layer 12 varies from 0.15mm to 0.6mm.
The wavelength tuning element 6 is used for tuning the laser wavelength, the wavelength tuning element 6 is placed in the laser resonator at the brewster angle, the wavelength tuning element 6 can rotate, and specifically, the wavelength tuning element 6 can rotate around the normal line of the plane where the wavelength tuning element 6 is located.
Specifically, the reflective region 8 in the semiconductor epitaxial wafer 2 has 30 pairs of GaAs/AlAs layers, each of GaAs and AlAs having an optical thickness equal to 1018nm/4 (i.e., a quarter wavelength), so that the reflective region 8 provides a reflectivity of up to 99.99% for infrared laser light having a wavelength in the 1018nm band. The active region 9 is In 0.15 GaAs/GaAs multiple quantum well, the fluorescence peak wavelength of which is 1018nm, and thus the active region 9 can generate stimulated radiation with a lasing wavelength of 1018nm band. The protective layer 10 is a GaAs layer that prevents the semiconductor epitaxial wafer 2 from being oxidized.
The pump source 3 is a semiconductor laser diode with an operating wavelength of 808 nm. The output mirror 7 is coated with a transmission layer having a certain transmittance for 1018 nm. The mode control element 5 is an etalon of variable thickness, the variable thickness layer 12 of which can vary from 0.15mm to 0.6mm, and the first reflective layer 11 and the second reflective layer 13 of which are both coated with a reflective film having a reflectivity for the laser wavelength. The wavelength tuning element 6 is a birefringent filter and has a thickness of 1mm, and when it is placed in the laser resonator at the brewster angle, the stimulated radiation will be in a horizontally polarized state. The output wavelength of the laser beam is tuned by rotating the wavelength tuning element 6 about the normal to the plane in which the wavelength tuning element 6 is located. By utilizing the property that the laser linewidth is inversely proportional to the resonant cavity length, the laser resonant cavity length is reasonably optimally designed to prolong the photon service life in the cavity, and the mode control element 5 and the wavelength tuning element 6 are combined to perform laser mode selection and linewidth compression, so that the high-performance single-frequency laser with high power, narrow linewidth, wide tuning and other parameter characteristics is realized.
The specific implementation process is as follows:
the active region 9 in the semiconductor epitaxial wafer 2 absorbs the energy of the pump light, producing stimulated radiation. The stimulated radiation forms laser oscillation under the combined action of a laser resonant cavity formed by the semiconductor epitaxial wafer 2, the folding mirror 4 and the output mirror 7. By utilizing the property that the laser linewidth is inversely proportional to the length of the resonant cavity, the laser resonant cavity length is reasonably optimally designed to prolong the photon service life in the cavity, and the mode control element 5 and the wavelength tuning element 6 are combined to perform laser mode selection and linewidth compression, so that high-power, narrow linewidth and wide tuning output are realized.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing is merely an embodiment of the present invention, and a specific structure and characteristics of common knowledge in the art, which are well known in the scheme, are not described herein, so that a person of ordinary skill in the art knows all the prior art in the application day or before the priority date of the present invention, and can know all the prior art in the field, and have the capability of applying the conventional experimental means before the date, so that a person of ordinary skill in the art can complete and implement the present embodiment in combination with his own capability in the light of the present application, and some typical known structures or known methods should not be an obstacle for a person of ordinary skill in the art to implement the present application. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the structure of the present invention, and these should also be considered as the scope of the present invention, which does not affect the effect of the implementation of the present invention and the utility of the patent. The protection scope of the present application shall be subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (10)
1. A high performance single frequency laser, characterized by: the semiconductor epitaxial wafer comprises a pumping source (3), a semiconductor epitaxial wafer (2), a folding mirror (4), a mode control element (5), a wavelength tuning element (6) and an output mirror (7); the pump source (3) is used for emitting pump light onto the semiconductor epitaxial wafer (2), and the semiconductor epitaxial wafer (2) is used for absorbing the energy of the pump light and generating stimulated radiation on the wavelength of the pump light; the folding mirror (4) is used for reflecting stimulated radiation reflected by the semiconductor epitaxial wafer (2) to the output mirror (7); the output mirror (7) is used for outputting single-frequency laser; the mode control element (5) and the wavelength tuning element (6) are arranged between the folding mirror (4) and the output mirror (7); a laser resonant cavity is formed among the semiconductor epitaxial wafer (2), the folding mirror (4) and the output mirror (7), and the stimulated radiation forms laser oscillation under the action of the laser resonant cavity; the mode control element (5) is used for controlling a longitudinal mode in the laser resonant cavity and realizing a single longitudinal mode; the wavelength tuning element (6) is for tuning a laser wavelength, the wavelength tuning element (6) being rotatable.
2. A high performance single frequency laser as claimed in claim 1 wherein: the semiconductor epitaxial wafer (2) comprises a reflection area (8) and an active area (9) which are sequentially arranged, wherein the reflection area (8) is used for reflecting the stimulated radiation, and the active area (9) is used for providing light amplification for the stimulated radiation.
3. A high performance single frequency laser as claimed in claim 1 wherein: the mode control element (5) comprises a first reflecting layer (11), a variable thickness layer (12) and a second reflecting layer (13) which are sequentially arranged, wherein the first reflecting layer (11) and the second reflecting layer (13) are used for reflecting the laser wavelength.
4. A high performance single frequency laser as claimed in claim 1 wherein: the wavelength tuning element (6) is placed in the laser resonator at the brewster angle.
5. The high performance single frequency laser of claim 4, wherein: the wavelength tuning element (6) is rotatable about a normal to a plane in which it is located.
6. A high performance single frequency laser as claimed in claim 2 wherein: the semiconductor epitaxial wafer (2) further comprises a protective layer (10), and the protective layer (10) is used for preventing the semiconductor epitaxial wafer (2) from being oxidized.
7. A high performance single frequency laser as claimed in claim 3 wherein: the variable thickness layer (12) varies from 0.15mm to 0.6mm.
8. A high performance single frequency laser as claimed in claim 1 wherein: the semiconductor epitaxial wafer comprises a semiconductor epitaxial wafer (2), and is characterized by further comprising a heat sink (1), wherein the semiconductor epitaxial wafer (2) is fixed on the heat sink (1), and the heat sink (1) is used for radiating heat of the semiconductor epitaxial wafer (2).
9. A high performance single frequency laser as claimed in claim 1 wherein: the folding mirror (4) is plated with a high-reflection film layer for reflecting the laser wavelength.
10. A high performance single frequency laser as claimed in claim 1 wherein: the output mirror (7) is coated with a transmission layer which transmits the laser wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311698492.1A CN117578183A (en) | 2023-12-12 | 2023-12-12 | High-performance single-frequency laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311698492.1A CN117578183A (en) | 2023-12-12 | 2023-12-12 | High-performance single-frequency laser |
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| Publication Number | Publication Date |
|---|---|
| CN117578183A true CN117578183A (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311698492.1A Pending CN117578183A (en) | 2023-12-12 | 2023-12-12 | High-performance single-frequency laser |
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| CN (1) | CN117578183A (en) |
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- 2023-12-12 CN CN202311698492.1A patent/CN117578183A/en active Pending
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