CN103824848A - LED (Light Emitting Diode) display screen and manufacturing method thereof - Google Patents
LED (Light Emitting Diode) display screen and manufacturing method thereof Download PDFInfo
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- CN103824848A CN103824848A CN201410023380.0A CN201410023380A CN103824848A CN 103824848 A CN103824848 A CN 103824848A CN 201410023380 A CN201410023380 A CN 201410023380A CN 103824848 A CN103824848 A CN 103824848A
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Abstract
The invention discloses a LED (Light Emitting Diode) display screen and a manufacturing method thereof. The LED (Light Emitting Diode) display screen comprises a substrate, a driving substrate and pixel modules, wherein the driving substrate is formed on the substrate; the pixel modules are packaged on the substrate; the pixel module is formed by LED flip chips packaged by the flip-chip technology; the LED flip chips are arranged on the driving substrate; isolation paths are formed among the LED flip chips on the driving substrate; the exposed surfaces of the LED flip chips and the isolation paths are covered with a transparent packaging body; and the isolation paths are filled in gaps between the packaging body and the LED flip chips inside the driving substrate. LED flip chips do not need to be packaged alone and then integrally packaged to form the pixel module, gaps among pixels can be effectively controlled through arranging isolation paths between LED flip chips, and definition of the LED display screen is then improved.
Description
Technical field
The invention belongs to technical field of semiconductors, relate in particular to a kind of flip-chip that adopts as LED display of picture element module and preparation method thereof.
Background technology
Light-emitting diode (Light Emitting Diode is called for short LED) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, electricity can be converted to light.When the two ends of semiconductor PN add after forward voltage, electronics and the hole generation of injecting PN junction are compound, and superfluous energy is discharged with the form of photon.It is long that LED has the life-span, advantage low in energy consumption, along with the day by day maturation of technology, the also more and more polynary change of the utilization field of LED, wherein, the manufacturing process in LED display field also, more and more ripe, forms single primary colours display screen to the colorful and full-color display screen being made up of LED chip grain matrix-block from initial by LED bead array, and LED display has been widely used in multimedia advertising and public bulletin shows.
The picture element module of existing LED display is to be formed by a lot of pixel unit integration packagings, between pixel unit, inevitably there is larger gap, picture element density on display screen and definition cause great impact, hinder LED display shows development from field to high definition.
Directly adopt LED panel as display screen, dwindling LED pel spacing is a vital task, and normally used surface-mount type packaged LED cannot meet the needs of this respect.Display pixel at present common LED flat panel display unit is made up of packaged LED unit.Because described LED unit comprises several LEDs chips, lead frame, heat dispersion substrate and transparent sealing, limit spacing and the size of pixel, be therefore difficult to realize high-resolution and show.
In order to overcome the above problems, patent publication No. is to disclose a kind of LED display and preparation method thereof in the Chinese invention patent application of CN103219286A, the picture element module of this display screen is single led chip, picture element module is encapsulated on substrate, LED chip comprises substrate, tube core, is arranged at the electrode contacting on tube core and with tube core corresponding region, and pixel cell is isolated by the isolation channel on tube core; Electrode comprises the first electrode group and the second electrode group, on the first electrode group and the second electrode group, generate and have the first electrode layer and the second electrode lay respectively, the first electrode layer and the second electrode lay are separated by the second insulating barrier, in the second electrode lay, form the second isolation channel by according to pixels unit forms, the second electrode lay surface is formed with tft layer, and tft layer and substrate mount.The picture element module of this patent LED display is made up of the single led chip of the isolation channel isolation by forming on tube core, avoiding the interactional while between pixel, gap between each pixel can be effectively controlled, thereby improve the definition of LED display.But the isolation channel of this LED display is to be formed on the substrate of tube core, by the isolation channel in tube core substrate, pixel cell is separated, substrate is not isolated, because backing material price is higher, from the angle of production cost, on substrate, form isolation channel and pixel cell is isolated in to the waste that has caused to a certain extent material, cannot effectively reduce production costs.
Summary of the invention
For above deficiency, the object of the present invention is to provide a kind of LED display that adopts flip chip technology (Flip-chip), realizing minimum spacing and high-resolution while, simplify production technology, reduce production costs.
To achieve these goals, the present invention takes following technical solution:
LED display, comprise substrate, form the driving substrate being electrically connected and be packaged in the picture element module on described substrate with described substrate, described picture element module is made up of LED flip-chip, described LED flip-chip is located on described substrate, on described substrate, between adjacent LED flip-chip, be formed with isolation road, be provided with transparent enclosure body at isolation top, road, encapsulation main body forms with isolation road the space that holds described LED flip-chip.
The concrete technical scheme of the present invention is: the material in described isolation road is material modified or epoxy resin material modified of silica gel or epoxy resin or silica gel.
The concrete technical scheme of the present invention is: described isolation road is black.
The concrete technical scheme of the present invention is: described encapsulation main body is clear glass or transparent ceramic or transparent silica gel or epoxy resin or perspex.
The concrete technical scheme of the present invention is: the spacing between described LED flip-chip is 5-200 μ m.
The concrete technical scheme of the present invention is: described encapsulation main body is covered in described picture element module and isolation road exposed surface; Or there is gap between described LED flip-chip and described isolation road and described encapsulation main body.
The concrete technical scheme of the present invention is: described isolation road is divided into two parts: the reflecting part of close described substrate one end and the isolation road away from described substrate one end.
The concrete technical scheme of the present invention is: the surface of described reflecting part is higher than the substrate of described LED flip-chip.
The manufacture method of LED display, comprises the following steps:
Substrate is provided, forms the driving substrate being electrically connected with described substrate;
Form the first electrode layer, on the first electrode layer, form insulation hole slot;
On the first electrode layer and in insulation hole slot, form insulating barrier, and expose part the first electrode layer;
On insulating barrier, form the second electrode lay;
On the first electrode layer and the second electrode lay, form respectively the first electrode welding point and the second electrode welding point;
LED Flip-Chip Using is driven on the substrate of substrate in being formed with, the first electrode of LED flip-chip is connected by soldered ball with the first electrode welding point, thereby be electrically connected with the first electrode layer, the second electrode is connected by soldered ball with the second electrode welding point, thereby be electrically connected with the second electrode lay, between LED flip-chip, form some crisscross isolation channels;
In isolation channel, form isolation road, isolation road marks off pixel unit;
At top, described isolation road, transparent enclosure body is set, completes encapsulation.
From above technical scheme, the present invention is weldingly fixed on multiple LED flip-chips on substrate, each LED flip-chip is separated by isolating, cover encapsulation main body at LED flip-chip and isolation road exposed surface, gap between each pixel can be controlled effectively, dwindle the spacing between LED flip-chip, thereby improved the definition of LED display; And each pixel is separated by isolating, can avoid working between pixel time, influence each other, further improve the definition of LED display.Compared with prior art, be independent parts by isolating because LED flip-chip of the present invention is each, other element of LED flip-chip is formed at separately on substrate separately, compares and adopts overall substrate effectively to reduce production costs, and is beneficial to control yields.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention, to the accompanying drawing of required use in embodiment or description of the Prior Art be done to simple introduction below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the cutaway view of the embodiment of the present invention 1 display screen;
Fig. 2 is the structural representation of the LED flip-chip of the embodiment of the present invention 1;
Fig. 3 to Fig. 9 is respectively the schematic diagram of the each step of LED display manufacture method of the present invention;
Figure 10 is the application composition structural representation of the embodiment of the present invention 1;
Figure 11 is the structural representation of the embodiment of the present invention 2 display screens;
Figure 12 is the cutaway view of the embodiment of the present invention 2 display screens;
Figure 13 is the application composition structural representation of the embodiment of the present invention 2;
Figure 14 is the cutaway view of the embodiment of the present invention 3 display screens.
Embodiment
As shown in Figure 1, LED display of the present invention comprises substrate 1, on substrate 1, encapsulate multiple picture element modules, described picture element module is made up of the LED flip-chip 3 that independently adopts reverse installation process encapsulation, between LED flip-chip 3, isolated by isolation road 4, be coated with transparent encapsulation main body 5 at picture element module and isolation road exposed surface, encapsulation main body 5 is the transparent inorganic materials such as clear glass or transparent ceramic, or the transparent organic material such as transparent silica gel, epoxy resin, perspex.Between substrate 1 and picture element module, be provided with the driving substrate 2 that is used to form electrical connection, drive substrate 2 to be electrically connected with substrate 1.
Simultaneously with reference to Fig. 2, LED flip-chip 3 of the present invention comprises substrate 30, is formed at n type semiconductor layer 31, multiple quantum well layer 32, p type semiconductor layer 33, the current-diffusion layer 34 on substrate 30 successively, and forms the P electrode 35 being electrically connected and form with n type semiconductor layer 31 the N electrode 36 being electrically connected with p type semiconductor layer 33.
The driving substrate 2 of the present embodiment is thin-film transistor, and substrate 1 top is formed with P electrode layer 6, and the present embodiment describes as the first electrode layer as example take P electrode layer, and corresponding, N electrode layer is the second electrode lay, and P electrode is the first electrode, and N electrode is the second electrode; On P electrode layer 6, be formed with N electrode layer 7, between P electrode layer 6 and N electrode layer 7, be formed with insulating barrier 8, insulating barrier 8 is kept apart P electrode layer 6 and N electrode layer 7.On P electrode layer 6, form the P electrode welding point 6a(first electrode welding point of corresponding P electrode 35), on N electrode layer 7, form the N electrode welding point 7a(second electrode welding point of corresponding N electrode 36), P electrode 35 is connected by soldered ball with P electrode welding point 6a, N electrode 36 is connected by soldered ball with N electrode welding point 7a, thereby forms electrical connection.
Between the LED of being formed at flip-chip of the present invention, the material in crisscross isolation road 4 is preferably material modified or epoxy resin material modified of silica gel, epoxy resin, silica gel, specifically can select ABS glue or PC glue, and take black as preferred colors.Adopt isolation road that each pixel unit is separated, when work between pixel unit, be independent of each other, can further improve the definition of display screen.
Spacing between the LED flip-chip of the present embodiment is 5 μ m, picture element module of the present invention can only include monochromatic LED flip-chip, also can be the dual-colored LED flip-chip comprising based on ruddiness and green glow chip, also can be the three-color LED flip-chip based on ruddiness, green glow and blue chip or the LED flip-chip that adds amber or purple at the three-color LED flip-chip based on ruddiness, green glow and blue chip outward, or other chip of other supplementary colour gamut or plumpness.
With reference to Fig. 3 to Fig. 9, LED display manufacture method step of the present invention is as follows:
Step 4, as shown in Figure 6 forms N electrode layer 7 on insulating barrier 8;
With reference to Figure 10, the application composition structure of display screen of the present invention mainly includes: substrate 1 and the wire 11 being electrically connected with substrate 1, the LED flip-chip 3(picture element module of welding on substrate 1), surround between the housing 10 with radiating fin, LED flip-chip 3 of substrate 1 and form some crisscross isolation roads 4 and be filled in the transparent enclosure colloid 5 of substrate 1 top, transparent enclosure body 5 covers LED flip-chip 3 and isolation road 4 exposed surfaces completely.
As shown in Figure 11 and Figure 12, LED display comprises substrate 1, and is encapsulated in picture element module on substrate 1 and drives substrate 2, drives substrate 2 can directly be arranged at substrate 1 top, or is independent of substrate 1 and is electrically connected with substrate formation by electrical cable.The places different from embodiment 1 are: the picture element module of the present embodiment is made up of three-color LED flip-chip 3 ', three-color LED flip-chip 3 ' can be the three-color LED flip-chip based on ruddiness, green glow and blue chip, or by multiple blue led flip-chips, on the substrate of blue led flip-chip, apply respective color fluorescent material by modes such as wafer-level packaging technique or electrophoresis processes simultaneously and form transmitting blue light, ruddiness, green glow.LED flip-chip 3 ' face-down bonding is fixed on substrate 1, is electrically connected with driving substrate 2 formation, between LED flip-chip 3 ', isolated each other by some crisscross isolation roads 4, encapsulation main body 5 covers and is arranged at isolation 4 tops, road, and encapsulation main body 5 forms with isolation road 4 space that holds LED flip-chip.Spacing between the LED flip-chip 3 ' of the present embodiment is 100 μ m, between LED flip-chip 3 ' and isolation road 4 and encapsulation main body 5, has gap.
As shown in figure 13, for the application composition structure of the present embodiment display screen, the wire 11 that it comprises substrate 1 and is electrically connected with substrate 1, on substrate 1, be welded with picture element module, substrate 1 outsourcing shroud has the housing 10 of radiating fin, between the LED flip-chip 3 ' of picture element module, form some crisscross isolation roads 4, isolation 4 tops, road arrange transparent enclosure body 5, each LED flip-chip 3 ' is separated in isolation road 4, by transparent silica gel 12, encapsulation main body 5, housing 10 and substrate 1 and outside atmosphere joint gap is sealed.
With reference to Figure 14, the present embodiment place different from embodiment 2 is: the spacing between the adjacent LED flip-chip 3 ' of the present embodiment is 200 μ m, the isolation road 4 of the present embodiment is divided into two parts: the reflecting part 9 of close substrate 1 one end and the isolation road 4 away from substrate 1 one end, preferably, reflecting part 9 is the substrate 30 higher than LED flip-chip 3 ' away from the surface (upper surface) of the end of substrate 1, reflecting part 9 forms reflection chamber around LED flip-chip 3 ', can be by LED flip-chip 3 ' side luminous after reflection chamber reflection, substrate 30 by LED flip-chip 3 ' is to external reflectance, thereby be conducive to improve the luminous efficiency of LED display.
The present invention after LED chip need not being encapsulated separately again integration packaging become picture element module, but flip-chip is directly set on substrate, effectively dwindle the spacing between picture element module, mention the definition of LED display, adopt isolation road that LED flip-chip is separated simultaneously, by isolation road is set between LED flip-chip, avoids mutual when working between pixel to affect mutually, thereby improved the definition of LED display.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.To be apparent for those skilled in the art to the multiple modification of these embodiment, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the wide region consistent with principle disclosed herein and features of novelty.
Claims (10)
1.LED display screen, comprises substrate, forms the driving substrate being electrically connected and be packaged in the picture element module on described substrate with described substrate, drives substrate to be electrically connected with picture element module, it is characterized in that:
Described picture element module is made up of LED flip-chip, described LED flip-chip is located on described substrate, on described substrate, between adjacent LED flip-chip, be formed with isolation road, be provided with transparent enclosure body at isolation top, road, encapsulation main body forms with isolation road the space that holds described LED flip-chip.
2. LED display as claimed in claim 1, is characterized in that: the material in described isolation road is material modified or epoxy resin material modified of silica gel or epoxy resin or silica gel.
3. LED display as claimed in claim 2, is characterized in that: described isolation road is black.
4. LED display as claimed in claim 1, is characterized in that: described encapsulation main body is clear glass or transparent ceramic or transparent silica gel or epoxy resin or perspex.
5. LED display as claimed in claim 1, is characterized in that: the spacing between described LED flip-chip is 5-200 μ m.
6. LED display as claimed in claim 1, is characterized in that: described encapsulation main body is covered in described picture element module and isolation road exposed surface; Or there is gap between described LED flip-chip and described isolation road and described encapsulation main body.
7. the LED display as described in claim 1 or 6, is characterized in that: described isolation road is divided into two parts: the reflecting part of close described substrate one end and the isolation road away from described substrate one end.
8. LED display as claimed in claim 7, is characterized in that: the surface of described reflecting part is higher than the substrate of described LED flip-chip.
The manufacture method of 9.LED display screen, is characterized in that, comprises the following steps:
Substrate is provided, forms the driving substrate being electrically connected with described substrate;
Form the first electrode layer, on the first electrode layer, form insulation hole slot;
On the first electrode layer and in insulation hole slot, form insulating barrier, and expose part the first electrode layer;
On insulating barrier, form the second electrode lay;
On the first electrode layer and the second electrode lay, form respectively the first electrode welding point and the second electrode welding point;
LED Flip-Chip Using is driven on the substrate of substrate in being formed with, the first electrode of LED flip-chip is connected by soldered ball with the first electrode welding point, thereby be electrically connected with the first electrode layer, the second electrode is connected by soldered ball with the second pad, thereby be electrically connected with the second electrode lay, between LED flip-chip, form some crisscross isolation channels;
In isolation channel, form isolation road, isolation road marks off pixel unit;
At top, described isolation road, transparent enclosure body is set, completes encapsulation.
10. the manufacture method of LED display as claimed in claim 9, is characterized in that: described isolation road is divided into two parts: the reflecting part of close described substrate one end and the isolation road away from described substrate one end.
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| CN201410023380.0A CN103824848B (en) | 2014-01-16 | 2014-01-16 | LED display and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281456A (en) * | 2018-01-19 | 2018-07-13 | 福州大学 | Micro-LED device architectures and production method |
| CN109564964A (en) * | 2016-08-02 | 2019-04-02 | 奥斯兰姆奥普托半导体股份有限两合公司 | Multi-chip module |
| JP2019091032A (en) * | 2017-11-10 | 2019-06-13 | ルーメンス カンパニー リミテッド | LED display device |
| JP2020013986A (en) * | 2018-07-09 | 2020-01-23 | 日亜化学工業株式会社 | Light emitting device and method of manufacturing the same |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
| CN114824025A (en) * | 2021-01-19 | 2022-07-29 | 东莞市中麒光电技术有限公司 | LED display module and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738066A (en) * | 2005-07-29 | 2006-02-22 | 东莞市福地电子材料有限公司 | Gallium nitride based LED chip and its manufacturing method |
| CN101308838A (en) * | 2008-06-06 | 2008-11-19 | 广州南科集成电子有限公司 | Flip LED integrated chip with high break-over voltage |
| US20100258835A1 (en) * | 2009-04-10 | 2010-10-14 | Chin-Yuan Hsu | Light emitting diode device having uniform current distribution and method for forming the same |
| CN102945642A (en) * | 2012-11-16 | 2013-02-27 | 映瑞光电科技(上海)有限公司 | LED (light-emitting diode) display screen and manufacturing method thereof |
| CN203787424U (en) * | 2014-01-16 | 2014-08-20 | 大连德豪光电科技有限公司 | LED display screen |
-
2014
- 2014-01-16 CN CN201410023380.0A patent/CN103824848B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738066A (en) * | 2005-07-29 | 2006-02-22 | 东莞市福地电子材料有限公司 | Gallium nitride based LED chip and its manufacturing method |
| CN101308838A (en) * | 2008-06-06 | 2008-11-19 | 广州南科集成电子有限公司 | Flip LED integrated chip with high break-over voltage |
| US20100258835A1 (en) * | 2009-04-10 | 2010-10-14 | Chin-Yuan Hsu | Light emitting diode device having uniform current distribution and method for forming the same |
| CN102945642A (en) * | 2012-11-16 | 2013-02-27 | 映瑞光电科技(上海)有限公司 | LED (light-emitting diode) display screen and manufacturing method thereof |
| CN203787424U (en) * | 2014-01-16 | 2014-08-20 | 大连德豪光电科技有限公司 | LED display screen |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109564964A (en) * | 2016-08-02 | 2019-04-02 | 奥斯兰姆奥普托半导体股份有限两合公司 | Multi-chip module |
| CN109564964B (en) * | 2016-08-02 | 2021-08-24 | 奥斯兰姆奥普托半导体股份有限两合公司 | Multi-chip module |
| US11101249B2 (en) | 2016-08-02 | 2021-08-24 | Osram Oled Gmbh | Multi-chip module with light-emitting diode (LED) chips configured for surface mount technology (SMT) |
| JP2019091032A (en) * | 2017-11-10 | 2019-06-13 | ルーメンス カンパニー リミテッド | LED display device |
| CN108281456A (en) * | 2018-01-19 | 2018-07-13 | 福州大学 | Micro-LED device architectures and production method |
| CN108281456B (en) * | 2018-01-19 | 2020-09-01 | 福州大学 | Micro-LED device structure and manufacturing method |
| JP2020013986A (en) * | 2018-07-09 | 2020-01-23 | 日亜化学工業株式会社 | Light emitting device and method of manufacturing the same |
| JP7348478B2 (en) | 2018-07-09 | 2023-09-21 | 日亜化学工業株式会社 | Light emitting device and its manufacturing method |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
| CN114824025A (en) * | 2021-01-19 | 2022-07-29 | 东莞市中麒光电技术有限公司 | LED display module and manufacturing method thereof |
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| CN103824848B (en) | 2017-03-15 |
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