CN103811405A - 一种高压发光二级管的制备方法 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
一种高压发光二级管的制备方法，涉及GaN材料发光二极管技术领域。本发明的方法步骤为：①采用ICP刻蚀、RIE刻蚀、激光刻蚀或者钻石划片的工艺在发光二级管芯片的上表面刻蚀出隔离沟槽；②用化学刻蚀液对刻蚀出的隔离沟槽进行腐蚀，获得隔离沟槽及其侧壁一定的形貌，各隔离沟槽围城的中间部分构成多个串联或者并联在一起的发光单元。同现有技术相比，本发明可以根据用户情况选择合适的刻蚀方式实现，并增加了湿法腐蚀工艺使沟槽和侧壁形成理想形貌，能有效提高高压LED芯片的光效。
Description
技术领域
本发明涉及GaN材料发光二极管技术领域，特别是高压发光二级管的制备方法。
背景技术
近年来，随着蓝光LED的发展，LED的应用领域迅速扩大，背光、照明等高端领域更是被LED逐步渗透。为了适用市场的需求，高压LED产品逐渐进入市场。
高压LED是LED集成的一种方式，是由多个发光单元串、并联在一起，得到不同的电压与功率。这种集成方式是在LED制作过程中集成的，根据客户对电压、功率的需求，设计与生产的。高压LED可以在后续的应用中节省成本。
现有技术中，高压LED各发光单元间的隔离一般采用ICP刻蚀或者RIE刻蚀的方式，刻蚀深度至LED芯片中的Al2O3衬底层，形成隔离沟槽。这种传统的制备方法比较单一，所制成的高压LED芯片的亮度不是很高。
发明内容
为了克服上述现有技术的不足，本发明的目的是提供一种高压发光二级管的制备方法。它可以根据用户情况选择合适的刻蚀方式实现，并增加了湿法腐蚀工艺使沟槽和侧壁形成理想形貌，能有效提高高压LED芯片的光效。
为了达到上述发明目的，本发明的技术方案以如下方式实现：
一种高压发光二级管的制备方法，其步骤为：
在上述制备方法中，所述隔离沟槽刻蚀至发光二级管芯片中GaN与衬底的界面处或者深入到衬底层。
在上述制备方法中，所述激光刻蚀采用激光划片机。
在上述制备方法中，所述化学刻蚀液采用H2SO4、H3PO4溶液中的一种或者二者的混合液，或者采用KOH溶液。
本发明由于采用了上述方法，不仅提供了多种刻蚀沟槽的方式可以根据用户情况自由选择，并且增加了湿法腐蚀工艺使沟槽和侧壁形成理想形貌，有效的提高了高压LED芯片的光效。
下面结合附图和具体实施方式对本发明作进一步说明。
附图说明
图1为采用本发明方法制备的一种高压光二级管结构示意图。
具体实施方式
参看图1，本发明制备方法的步骤为：
本发明制备方法中，在进行化学腐蚀前还可以采用SiO2等介质对器件正表面进行保护。本发明制备方法可以是针对高压LED的部分隔离沟槽3，也可以是全部隔离沟槽3。
Claims (4)
1.一种高压发光二级管的制备方法，其步骤为：
采用ICP刻蚀、RIE刻蚀、激光刻蚀或者钻石划片的工艺在发光二级管芯片的上表面刻蚀出隔离沟槽（3）；
2.根据权利要求1所述的高压发光二级管的制备方法，其特征在于，所述隔离沟槽（3）刻蚀至发光二级管芯片中GaN与衬底的界面处或者深入到衬底层。
3.根据权利要求1或2所述的高压发光二级管的制备方法，其特征在于，所述激光刻蚀采用激光划片机。
4.根据权利要求3所述的高压发光二级管的制备方法，其特征在于，所述化学刻蚀液采用H2SO4、H3PO4溶液中的一种或者二者的混合液，或者采用KOH溶液。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1249540A (zh) * | 1998-09-29 | 2000-04-05 | 夏普公司 | 制造发光二极管的方法 |
| US20110195539A1 (en) * | 2010-02-11 | 2011-08-11 | Dae Sung Kang | Method for forming semiconductor layer and method for manufacturing light emitting device |
| CN102280534A (zh) * | 2011-07-06 | 2011-12-14 | 上海蓝光科技有限公司 | 预处理蓝宝石衬底提高led出光效率的方法 |
| CN102623587A (zh) * | 2012-03-31 | 2012-08-01 | 华灿光电股份有限公司 | Led芯片的制造方法 |
-
2012
- 2012-11-15 CN CN201210459434.9A patent/CN103811405A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1249540A (zh) * | 1998-09-29 | 2000-04-05 | 夏普公司 | 制造发光二极管的方法 |
| US20110195539A1 (en) * | 2010-02-11 | 2011-08-11 | Dae Sung Kang | Method for forming semiconductor layer and method for manufacturing light emitting device |
| CN102280534A (zh) * | 2011-07-06 | 2011-12-14 | 上海蓝光科技有限公司 | 预处理蓝宝石衬底提高led出光效率的方法 |
| CN102623587A (zh) * | 2012-03-31 | 2012-08-01 | 华灿光电股份有限公司 | Led芯片的制造方法 |
Non-Patent Citations (1)
| Title |
|---|
| 金霞等: "发光二极管阵列中上隔离沟槽的设计与制备", 《微细加工技术》 * |
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Application publication date: 20140521 |