CN103794539A - Process for electrostatic sucking plate processing - Google Patents
Process for electrostatic sucking plate processing Download PDFInfo
- Publication number
- CN103794539A CN103794539A CN201310415351.4A CN201310415351A CN103794539A CN 103794539 A CN103794539 A CN 103794539A CN 201310415351 A CN201310415351 A CN 201310415351A CN 103794539 A CN103794539 A CN 103794539A
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- China
- Prior art keywords
- electrostatic chuck
- disk
- conductive layer
- ceramic disk
- processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The invention discloses a process for electrostatic sucking plate processing. According to the process, a thin ceramic disk (1), a conductive layer (2), an electrode plate (3), a Teflon coating layer (4), a substrate ceramic plate (5), and a metal pedestal (6) are arranged. The process for electrostatic sucking plate processing is explained in detail in the description of the invention and the concrete embodiment is brought forward. The invention, which belongs to the semiconductor manufacturing field, relates to an ion injection device.
Description
Technical field
The present invention relates to the technical field of a kind of ceramic bonding and Electrostatic Absorption, be particularly applied in ion implantor and improve the indexs such as charge velocity improvement injection mass of ion.
Background technology
Along with the development of semiconductor technology, updating of semiconductor equipment, the technical indicator such as purity, angle to Implanted Silicon Wafer has had higher requirement, and wherein important effect has been brought into play in the improvement of electrostatic chuck manufacture craft in the lifting process of these technical indicators.Electrostatic chuck is the carrier of silicon chip in ion implantation process, and under operating state, the electrostatic adsorption of six phase power generations fits together silicon chip and electrostatic chuck completely.So electrostatic chuck processing technology directly affects the technical indicator such as the purity of Implantation and the accuracy of implant angle.
In the manufacture craft of current electrostatic chuck, the bonding of electrostatic chuck completes by adhesive.The shortcoming of this manufacture craft is that electrical insulation capability is poor, thermal stability and thermoplastic property poor, it is very large that technique for sticking is affected by adhesive viscosity flow.In ion implantation process, electrical insulating property can exert an influence to absorption affinity; In ion implantation process, the rising of temperature of electrostatic chuck can cause partial melting or the decomposition of adhesive, causes atmosphere to pollute; The viscosity flow missionary society of adhesive causes the existence of bubble, and bubble breaks and causes phase region to damage.And the bonding good shortcoming that above-mentioned polymer adhesive brings that solved of Teflon, teflon coatings when baking melt-flow form nonporous film, there is remarkable chemical stability, fabulous sticky characteristic, maximum operation (service) temperature is 200 ℃.
Summary of the invention
The invention discloses the process of a kind of electrostatic chuck processing in ion implantation machine system, the electrical insulating property that well solved bonding existence in current electrostatic chuck process for making is poor, thermal stability and the shortcoming such as thermoplasticity is poor.
Patent of the present invention is achieved through the following technical solutions:
1. a process for electrostatic chuck processing, is characterized in that: thin ceramic disk (1), conductive layer (2), electrode disk (3), teflon coatings (4), substrate ceramic disk (5), metab (6).
2. the process of a kind of electrostatic chuck processing as claimed in claim 1, is characterized in that: in a plane of thin ceramic disk (1), adopt the method for physical vapour deposition (PVD) to generate one deck conductive layer (2).
3. the process of a kind of electrostatic chuck processing as claimed in claim 2, is characterized in that: adopt etching method to generate six phase regions conductive layer (2), be called electrode disk (3).
4. the process of a kind of electrostatic chuck processing as claimed in claim 3, is characterized in that: electrode disk (3) and substrate ceramic disk (5) adopt teflon coatings (4) bonding.
5. the process of the processing of a kind of electrostatic chuck as described in claim 1 and 4, is characterized in that: by the thin ceramic disk (1) being bonded together, conductive layer (2), electrode disk (3), teflon coatings (4), substrate ceramic disk (5) adopt a kind of adhesive and metal chassis (6) bonding.
The present invention has following remarkable advantage:
1. teflon coatings has splendid chemical stability;
2. vacuum-sintering reduces the existence of bubble;
3. the conductive layer thickness that physical vapour deposition (PVD) forms is even, and adsorptivity is uniform and stable;
Accompanying drawing explanation
Fig. 1 is that electrostatic chuck critical component of the present invention is arranged schematic diagram;
Fig. 2 is the assembling schematic diagram of electrostatic chuck of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further introduced, should be appreciated that, these introductions are all illustrative, the invention is not restricted to this.Scope of the present invention is only limited by the scope of claims.
First with reference to figure 1, introduce arrangement and the adhesion principle of electrostatic chuck critical component.
As shown in Figure 1, thin ceramic disk (1) passes through the uniform metal level of effect deposit a layer thickness of physical vapour deposition (PVD) in a plane therein, and this layer of metal level is called as conductive layer (2).Conductive layer (2) is carried out to etching, and etched result is that conductive layer (2) is divided into six phase regions, now, is called electrode disk (3) by the thin ceramic disk (1) of conductive layer (2) deposit.In a plane of substrate ceramic disk, spray teflon coatings (4), to spray substrate ceramic disk presintering under vacuum atmosphere of teflon coatings (4), in sintering process, heating rate is even, after insulation a period of time, naturally cooling.Electrode disk there is is the one side of conductive layer (2) have the one side of teflon coatings (4) to fit with substrate ceramic disk (5), after electrode disk (3) and substrate ceramic disk (5) complete matching, under vacuum atmosphere, carry out double sintering, the result of sintering is that electrode disk (3) bonds together by teflon coatings (4) completely with substrate ceramic disk (5).Finally, by the surperficial coating adhesive of metal chassis (6), then the electrode disk having bonded together completely (3) and base ceramic disk (5) is final and metal chassis (6) bonds together, after bonding completing, be positioned over rapidly under vacuum atmosphere and got rid of bubble.After vacuum atmosphere a period of time, in air, naturally place after a period of time, the processing technology of electrostatic chuck completes.
Specific embodiment of the present invention elaborates content of the present invention.For persons skilled in the art, any apparent change of without departing from the premise in the spirit of the present invention it being done, or the direct replacement of customary means, all form the infringement to patent of the present invention, will bear corresponding legal liabilities.
Claims (5)
1. a process for electrostatic chuck processing, is characterized in that: thin ceramic disk (1), conductive layer (2), electrode disk (3), teflon coatings (4), substrate ceramic disk (5), metab (6).
2. the process of a kind of electrostatic chuck processing as claimed in claim 1, is characterized in that: in a plane of thin ceramic disk (1), adopt the method for physical vapour deposition (PVD) to generate one deck conductive layer (2).
3. the process of a kind of electrostatic chuck processing as described in claim 1 and 2, is characterized in that: adopt etching method to generate six phase regions conductive layer (2), be called electrode disk (3).
4. the process of a kind of electrostatic chuck processing as described in claim 1 and 3, is characterized in that: adopt teflon coatings (4) bonding at electrode (3) and substrate ceramic disk (5).
5. the process of the processing of a kind of electrostatic chuck as described in claim 1 and 4, is characterized in that: by the thin ceramic disk (1) being bonded together, conductive layer (2), electrode disk (3), teflon coatings (4), substrate ceramic disk (5) adopt a kind of adhesive and metal chassis (6) bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415351.4A CN103794539A (en) | 2013-09-12 | 2013-09-12 | Process for electrostatic sucking plate processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415351.4A CN103794539A (en) | 2013-09-12 | 2013-09-12 | Process for electrostatic sucking plate processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103794539A true CN103794539A (en) | 2014-05-14 |
Family
ID=50670079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310415351.4A Pending CN103794539A (en) | 2013-09-12 | 2013-09-12 | Process for electrostatic sucking plate processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103794539A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856041A (en) * | 2016-09-22 | 2018-03-30 | 欣兴电子股份有限公司 | Acetabula device and element transfer method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050094349A1 (en) * | 2003-10-29 | 2005-05-05 | Cheng-Liang Chang | Electrostatic chuck assembly having disassembling device |
| CN2922118Y (en) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | Electrostatic chuck used for chip clamping |
| CN102449754A (en) * | 2009-05-15 | 2012-05-09 | 恩特格林斯公司 | Electrostatic chuck with polymer protrusions |
-
2013
- 2013-09-12 CN CN201310415351.4A patent/CN103794539A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050094349A1 (en) * | 2003-10-29 | 2005-05-05 | Cheng-Liang Chang | Electrostatic chuck assembly having disassembling device |
| CN2922118Y (en) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | Electrostatic chuck used for chip clamping |
| CN102449754A (en) * | 2009-05-15 | 2012-05-09 | 恩特格林斯公司 | Electrostatic chuck with polymer protrusions |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856041A (en) * | 2016-09-22 | 2018-03-30 | 欣兴电子股份有限公司 | Acetabula device and element transfer method |
| CN107856041B (en) * | 2016-09-22 | 2021-04-20 | 欣兴电子股份有限公司 | Suction cup device and element transfer method |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140514 |