CN107856041A - Acetabula device and element transfer method - Google Patents

Acetabula device and element transfer method Download PDF

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Publication number
CN107856041A
CN107856041A CN201610839842.5A CN201610839842A CN107856041A CN 107856041 A CN107856041 A CN 107856041A CN 201610839842 A CN201610839842 A CN 201610839842A CN 107856041 A CN107856041 A CN 107856041A
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CN
China
Prior art keywords
acetabula device
electrostatic chuck
conductive layer
opening
patterned conductive
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Granted
Application number
CN201610839842.5A
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Chinese (zh)
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CN107856041B (en
Inventor
陈铭如
吴建德
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Xinxing Electronics Co Ltd
Unimicron Technology Corp
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Xinxing Electronics Co Ltd
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Priority to CN201610839842.5A priority Critical patent/CN107856041B/en
Publication of CN107856041A publication Critical patent/CN107856041A/en
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Publication of CN107856041B publication Critical patent/CN107856041B/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00Gripping heads and other end effectors
    • B25J15/0085Gripping heads and other end effectors with means for applying an electrostatic force on the object to be gripped
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/02Feeding of components

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  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a kind of Acetabula device and element transfer method, and its Acetabula device is drawing an at least element.Acetabula device includes electrostatic chuck and patterned conductive layer.Patterned conductive layer is configured on electrostatic chuck, with at least one opening for exposing partial electrostatic sucker, wherein when electrostatic chuck is powered, the electrostatic chuck being exposed via at least one opening induces an at least element and generation dipole dipolar forces between it so that an at least element is adsorbed on partial electrostatic sucker via at least one opening.Acetabula device provided by the invention carrys out absorptive element by dipole dipolar forces is produced between induction element and its, and the transfer method for the element that the present invention separately provides is avoided that electrostatic force punctures element.

Description

Acetabula device and element transfer method
Technical field
The present invention relates to a kind of Acetabula device and element transfer method, more particularly to it is a kind of with patterned conductive layer Acetabula device and use its element transfer method.
Background technology
In general, conventional electronic parts assembling is made by the take mode of (pick-place) of mechanicalness.So And as component size increasingly minimizes, traditional mode of taking can cause cost to be substantially improved.In addition, work as electronic component During into micron order or nano-grade size, mechanicalness mode of taking has been unfavorable for using.Although it has been proposed that use such as suction nozzle Mechanicalness is substituted to take mode etc. novel manner, but it has and costly makes the shortcomings that being not easy with tool.Therefore, it is micro- Small element assembling is absorbed in bottleneck.
The content of the invention
The present invention provides a kind of Acetabula device, carrys out absorptive element by dipole-dipole force is produced between induction element and its.
The present invention separately provides a kind of transfer method of element, is avoided that electrostatic force punctures element.
The Acetabula device of the present invention is drawing an at least element.Acetabula device includes electrostatic chuck and pattern conductive Layer.Patterned conductive layer is configured on electrostatic chuck, has at least one opening for exposing partial electrostatic sucker, wherein working as electrostatic When sucker is powered, the electrostatic chuck being exposed via at least one opening induces an at least element and generation dipole-idol between it Strongly so that an at least element is adsorbed on partial electrostatic sucker via at least one opening.
The transfer method of the element of the present invention comprises the following steps.Apply voltages to the electrostatic chuck of Acetabula device.Make suction Disk device is adsorbed on part close at least element at first position, wherein at least an element via at least one opening On electrostatic chuck.The Acetabula device for being adsorbed with an at least element is moved to the second place by first position.In the second place Place removes the voltage that puts on Acetabula device so that at least depart from an element self-absorption disc device and by first position draw to The second place.
In one embodiment of this invention, above-mentioned electrostatic chuck includes at least one positive electrode, at least one negative electrode And around at least one positive electrode and the insulating barrier of at least one negative electrode.
In one embodiment of this invention, above-mentioned at least one positive electrode includes multiple positive electrodes, at least one negative electricity Pole includes multiple negative electrodes.
In one embodiment of this invention, in addition to releasing layer, it is configured between electrostatic chuck and patterned conductive layer.
In one embodiment of this invention, the thickness of above-mentioned patterned conductive layer is between 1 μm to 5 μm.
In one embodiment of this invention, above-mentioned patterned conductive layer has grating structure.
In one embodiment of this invention, at least one above-mentioned opening includes multiple openings.
In one embodiment of this invention, an above-mentioned at least element includes multiple element, and multiple element passes through respectively It is adsorbed on by multiple openings on partial electrostatic sucker.
Based on above-mentioned, the present invention on electrostatic chuck using forming patterned conductive layer so that the partial zones of electrostatic chuck Domain has electrostatic force.Consequently, it is possible to dipole-dipole can be produced between the electrostatic chuck through opening exposure by induced element Power so that element is adsorbed on electrostatic chuck via opening.In addition, the opening arrays side by layout conductive layer Formula, multiple element batch can be transferred to required position and arranged in a desired manner.Therefore Acetabula device can be widely used in tool In the transfer step for having micron or the element of nano-scale size, and it is avoided that the characteristic of electrostatic influence element.
For features described above of the invention and advantage can be become apparent, special embodiment below, and it is detailed to coordinate accompanying drawing to make Carefully it is described as follows.
Brief description of the drawings
Figure 1A is a kind of diagrammatic cross-section of Acetabula device according to one embodiment of the invention;
Figure 1B is a kind of upper schematic diagram of Acetabula device according to one embodiment of the invention;
Fig. 2 is a kind of upper schematic diagram of Acetabula device according to one embodiment of the invention;
Fig. 3 A to Fig. 3 B are a kind of diagrammatic cross-sections of the transfer method of element according to one embodiment of the invention;
Fig. 4 A to Fig. 4 B are a kind of upper schematic diagrams of the transfer method of element according to one embodiment of the invention.
Embodiment
Figure 1A is a kind of diagrammatic cross-section of Acetabula device according to one embodiment of the invention, and Figure 1B is according to this A kind of upper schematic diagram of Acetabula device of one embodiment of invention.Referring to Figure 1A and Figure 1B, in the present embodiment, inhale Disk device 10 includes electrostatic chuck 100 and patterned conductive layer 110.Electrostatic chuck 100 is, for example, to include at least one positive electricity Pole 104, at least one negative electrode 106 and the insulating barrier 108 around positive electrode 104 and negative electrode 106, wherein distribution of charges in In insulating barrier 108.Positive electrode 104 with negative electrode 106 is arranged in a manner of both positive and negative polarity intersects.In the present embodiment, electrostatic is inhaled Disk 100 is, for example, to include staggered multiple positive electrodes 104 and multiple negative electrodes 106.In the present embodiment, positive electrode 104 Material with negative electrode 106 is, for example, copper foil, but the present invention is not limited.
Patterned conductive layer 110 is configured on electrostatic chuck 100, has at least one opening 112, and opening 112 exposes quiet The region 102 of electric sucker 100, and remaining region 103 of electrostatic chuck 100 is then patterned conductive layer 110 and covered.In this implementation In example, the thickness of patterned conductive layer 110 is, for example, between 1 μm to 5 μm.The material of patterned conductive layer 110 can be photoresistance Type conductive material.Therefore, patterned conductive layer 110 can by formed conductive layer, conductive layer is sequentially exposed and developed Formed etc. step.Either, when patterned conductive layer 110 does not have photoresistance characteristic, then can prior on electrostatic chuck 100 according to Sequence forms conductive layer and patterning photoresist layer, then removes partial electroconductive layer to pattern photoresist layer as mask, to form pattern Change conductive layer 110.In the present embodiment, patterned conductive layer 110 is, for example, to have multiple openings 112 separated each other, therefore As shown in Figure 1B, patterned conductive layer 110 is, for example, to have grating structure.In the present embodiment, be open 112 width and length E.g. it is respectively less than or equal to 100 μm.
In the present embodiment, as shown in Figure 1B, be by it is multiple opening 112 arrays arrangement exemplified by, but the present invention not as Limit.(not shown) in another embodiment, according to demand, patterned conductive layer 110 can also only have an opening 112.Or Person is that (not shown), multiple openings 112 of patterned conductive layer 110 can also have particular arrangement side in another embodiment Formula rather than close-packed arrays, such as with the monochromatic pixel (such as red pixel, green pixel or blue pixel) in colored filter Arrangement mode.
In the present embodiment, Acetabula device 10 also includes releasing layer (release layer) 120, is configured at electrostatic chuck Between 100 and patterned conductive layer 110.Releasing layer 120 includes possessing the characteristic that can be separated with electrostatic chuck 100, and it is configured with Help separate patterned conductive layer 110 with setting new patterned conductive layer 110 after electrostatic chuck 100.In the present embodiment, release It is, for example, to be formed by spraying process to put layer 120.The thickness of releasing layer 120 is, for example, to be less than or equal to 0.1 μm.
Furthermore as shown in Figure 1A, although being to be configured with a pair of positive and negative with a lower section of opening 112 in the present embodiment Exemplified by (including positive electrode 104 and negative electrode 106), but the not number to electrode of the invention or opening pass corresponding with positive and negative electrode System is any limitation as.For example, the positive electrode 104 in Acetabula device 10 can also have such as with negative electrode 106 and opening 112 Configuration mode shown in Fig. 2.
In the present embodiment, patterned conductive layer 110 can cover the quiet of the region 103 for the electrostatic chuck 100 being entirely covered Electric power, and the non-shaded areas 102 being exposed via opening 112 then still has electrostatic force.Therefore, such as Fig. 3 A and Fig. 4 A institutes Show, when applying voltages to electrostatic chuck 100 and making Acetabula device 10 close to element 130 positioned at first position S1, via opening The electrostatic force of mouthfuls 112 electrostatic chucks 100 being exposed can induce element 130 and its between produce dipole-dipole force so that member Part 130 is adsorbed on partial electrostatic sucker 100 via opening 112.That is, electric field is concentrated on into absorption surface (i.e. area Domain 102), it is zero to make reverse side current potential, so strengthens absorption affinity so that element 130 adsorbed by the region 102 of electrostatic chuck 100 and It is at least partially disposed in opening 112.
In the present embodiment, the size of element 130 can greater than, equal to or less than opening 112 size, and element 130 Size be, for example, micron grade or nano-scale.Element 130 is conductor or insulator, and element 130 is generally neutral.Element 130 be, for example, to need, by the component by a position transfer to another location, largely to be shifted in particular for batch multiple Component.For example, element 130 can be the component with electronic loop, such as circuit board, micro- light emitting diode, flash memory Integrated-circuit dies such as reservoir etc..Either, element 130 can be the component for chip package, such as soldered ball, tin cream or any Conducting particles etc..In other embodiments, element 130 can also be particle.Furthermore it is in the present embodiment, with an opening Exemplified by 112 one element 130 of corresponding absorption, but the present invention is not limited, and according to demand, an opening 112 can also be simultaneously Multiple element 130 is adsorbed, or multiple openings 112 can adsorb an element 130 together.
Then, as shown in Fig. 3 B and Fig. 4 B, the Acetabula device 10 for being adsorbed with element 130 is moved to by first position S1 After the S2 of the second place, the voltage put on electrostatic chuck 100 is removed so that depart from the self-absorption disc device 10 of element 130.As Shown in Figure 1B and Fig. 4 B, the arrangement mode of element 130 corresponds to the arrangement mode of the split shed 112 of patterned conductive layer 110.At this In embodiment, element 130 is, for example, array arrangement.
In the present embodiment, because patterned conductive layer 110 has multiple openings 112, therefore will by Acetabula device 10 Multiple element 130 is transferred to second place S2 by first position S1 simultaneously.Therefore batch can be carried out by foregoing Acetabula device 10 and turned Move multiple element 130, with formed such as micro- light emitting diode matrix, BGA Package (Ball Grid Array, BGA) or Paste solder printing etc..Therefore, micro- light emitting diode, chip package or surface adhering technical (Surface Mount be can be applied to Technology, SMT) etc. in technology.Special one is mentioned that, in the present embodiment, is produced by between induction element 130 and its Raw dipole-dipole force so that element 130 is adsorbed on partial electrostatic sucker 100 via opening 112, therefore the essence of element 130 On not static electrification, therefore phenomenon mutually exclusive between being avoided that element 130, to reach the purpose of arrangement element 130.In addition, also may be used The components such as the electronic loop in element 130 are avoided to be worn and damaged by stationary electrode.
In summary, the present invention on electrostatic chuck by patterned conductive layer is configured, not destroy overall electrostatic point In the case of cloth (i.e. surface field E=0), the subregional electrostatic force of shielding portion, and the subregional electrostatic force in reserve part.Such one Come, can by the opening arrays mode in layout conductive layer, by multiple element batch be transferred to needed for position and with Required mode arranges.Further, since Acetabula device is inhaled by inducing element and the mode of dipole-dipole force is produced between it Element is taken, therefore element substantially still remains neutral in itself, therefore element mutual exclusion because powered is avoided that, and avoid in element Electronic loop etc. is damaged by electrostatic breakdown.Therefore Acetabula device can be widely used in micron or nano-scale size components In transfer step (encapsulation etc.), so that cost is greatly reduced with improving production efficiency.
Although the present invention is disclosed as above with embodiment, so it is not limited to the present invention, any art Middle those of ordinary skill, without departing from the spirit and scope of the present invention, when a little change and retouching can be made, in the present invention In the range of.

Claims (9)

  1. A kind of 1. Acetabula device, to draw an at least element, it is characterised in that including:
    Electrostatic chuck;And
    Patterned conductive layer, it is configured on the electrostatic chuck, there is at least one opening for exposing the part electrostatic chuck, Wherein when the electrostatic chuck is powered, it is open via described at least one described in the electrostatic chuck induction being exposed at least One element and its between produce dipole-dipole force so that an at least element via described at least one opening be adsorbed on portion Divide on the electrostatic chuck.
  2. 2. Acetabula device according to claim 1, it is characterised in that the electrostatic chuck include at least one positive electrode, At least one negative electrode and the insulating barrier around at least one positive electrode and at least one negative electrode.
  3. 3. Acetabula device according to claim 2, it is characterised in that at least one positive electrode includes multiple positive electricity Pole, at least one negative electrode include multiple negative electrodes.
  4. 4. Acetabula device according to claim 1, it is characterised in that also including releasing layer, be configured at the electrostatic chuck Between the patterned conductive layer.
  5. 5. Acetabula device according to claim 1, it is characterised in that the thickness of the patterned conductive layer is between 1 μm to 5 μm。
  6. 6. Acetabula device according to claim 1, it is characterised in that the patterned conductive layer has grating structure.
  7. 7. Acetabula device according to claim 1, it is characterised in that at least one opening includes multiple openings.
  8. 8. Acetabula device according to claim 7, it is characterised in that an at least element includes multiple element, and The multiple element is adsorbed on the electrostatic chuck of part via the multiple opening respectively.
  9. A kind of 9. transfer method of element, it is characterised in that including:
    Apply voltages to the electrostatic chuck of the Acetabula device as any one of claim 1-8;
    Make the Acetabula device close at least element at the first position, wherein an at least element via it is described extremely A few opening is adsorbed on the electrostatic chuck of part;
    The Acetabula device for being adsorbed with an at least element is moved to the second place by the first position;And
    The voltage put on the Acetabula device is removed in the second place so that an at least element fills from the sucker Put disengaging and drawn by the first position to the second place.
CN201610839842.5A 2016-09-22 2016-09-22 Suction cup device and element transfer method Active CN107856041B (en)

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Application Number Priority Date Filing Date Title
CN201610839842.5A CN107856041B (en) 2016-09-22 2016-09-22 Suction cup device and element transfer method

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Application Number Priority Date Filing Date Title
CN201610839842.5A CN107856041B (en) 2016-09-22 2016-09-22 Suction cup device and element transfer method

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CN107856041B CN107856041B (en) 2021-04-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110578118A (en) * 2018-06-11 2019-12-17 佳能特机株式会社 Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and method for manufacturing electronic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091667C (en) * 1996-04-09 2002-10-02 德尔西斯药品公司 Chucks and methods for positioning multiple objects on a substrate
US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
CN102308378A (en) * 2008-11-25 2012-01-04 M丘比德技术公司 Electrostatic chuck
CN103794539A (en) * 2013-09-12 2014-05-14 北京中科信电子装备有限公司 Process for electrostatic sucking plate processing
CN103907181A (en) * 2011-09-30 2014-07-02 Toto株式会社 Electrostatic chuck
CN203895414U (en) * 2014-05-08 2014-10-22 中芯国际集成电路制造(北京)有限公司 Plasma etching machine

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091667C (en) * 1996-04-09 2002-10-02 德尔西斯药品公司 Chucks and methods for positioning multiple objects on a substrate
US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
CN102308378A (en) * 2008-11-25 2012-01-04 M丘比德技术公司 Electrostatic chuck
CN103907181A (en) * 2011-09-30 2014-07-02 Toto株式会社 Electrostatic chuck
CN103794539A (en) * 2013-09-12 2014-05-14 北京中科信电子装备有限公司 Process for electrostatic sucking plate processing
CN203895414U (en) * 2014-05-08 2014-10-22 中芯国际集成电路制造(北京)有限公司 Plasma etching machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110578118A (en) * 2018-06-11 2019-12-17 佳能特机株式会社 Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and method for manufacturing electronic device

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