CN103786272A - Solar polycrystalline silicon ingot cutting method - Google Patents
Solar polycrystalline silicon ingot cutting method Download PDFInfo
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- CN103786272A CN103786272A CN201310713468.0A CN201310713468A CN103786272A CN 103786272 A CN103786272 A CN 103786272A CN 201310713468 A CN201310713468 A CN 201310713468A CN 103786272 A CN103786272 A CN 103786272A
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- foaming agent
- silicon ingot
- polycrystalline silicon
- cutting
- solar energy
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Abstract
The invention provides a solar polycrystalline silicon ingot cutting method and belongs to the technical field of photovoltaic cutting. According to the technical scheme, the solar polycrystalline silicon ingot cutting method includes reserving a foaming agent adhesive layer in the middle of a cutting tray, placing solar polycrystalline silicon ingots in the middle of the foaming agent adhesive layer of the cutting tray, filling four edges of each solar polycrystalline silicon ingot with foaming agents, curing the foaming agents for 2 hours, removing excessive adhesive by a knife, and unloading the solar polycrystalline silicon ingots slowly without shaking after finishing cutting. The foaming agent adhesive layer in the middle of the cutting tray is reserved during ingot adhering and used for circulation, only the lower sides of four edges of the solar polycrystalline silicon ingots are filled with the foaming agent adhesive layers again, so that usage of the foaming agent is reduced greatly, curing time of the foaming agent is shortened, production cost is reduced while production efficiency is improved.
Description
Technical field
The invention belongs to photovoltaic slice processing technique field, relate in particular to a kind of solar energy polycrystal silicon ingot cutting method.
Background technology
Along with the mankind's continuing to increase silicon energy demand, solar energy appears at people at the moment by becoming a kind of new new forms of energy, therefore in the process of our online excavation machine cutting processing, to constantly reduce costs, improve the quality of product, dare to innovate, thereby meet the demand in each large market, remarkable development.
Summary of the invention
The invention provides a kind of solar energy polycrystal silicon ingot cutting method that reduces foaming agent use amount, enhance productivity.Solar energy polycrystal silicon ingot cutting method of the present invention, realizes by following technical proposals:
(1) at the reserved foaming agent glue-line in cutting pallet middle part;
(2) after solar energy polycrystal silicon ingot is placed between two parties on the foaming agent glue-line of cutting pallet, in the subcutaneous side's filled and process agent of solar energy polycrystal silicon ingot surrounding;
(3) foaming agent solidified after 2 hours, adopted cutter to remove the glue that overflows;
(4) after having cut, while unloading ingot, move light and slowly, prevent from rocking.
Solar energy polycrystal silicon ingot cutting method of the present invention, when the sticky ingot of silicon ingot, cutting pallet middle part foaming agent glue-line does not root out, give over to and recycle, when the sticky ingot of silicon ingot, only the subcutaneous side in solar energy polycrystal silicon ingot surrounding refills foaming agent glue-line, greatly reduce the use amount of foaming agent, also the hardening time that has shortened foaming agent, reach the beneficial effect that reduces production costs, enhances productivity simultaneously.
The specific embodiment
Below by specific embodiment, the present invention is further illustrated.
Reserved pallet middle part foaming agent (area 800mm*800mm) recycling before sticky ingot;
Middle part foaming agent every 10 cuttves are changed once, otherwise brilliant brick balance when excessively use can affect evolution and completes causes excavation machine gauze to break;
After silicon ingot is placed between two parties on pallet, surrounding subcutaneous side's filled and process agent (one-sided filling length 840mm, width 20mm, thickness 6-8mm);
After foaming agent solidifies, adopt cutter to remove the glue that overflows, avoid the foaming agent of filling to be taken out of.
While unloading ingot, action keeps light and slow, prevents from rocking
The use amount that reduces foaming agent 60%, has reduced processing cost;
Shorten sticky ingot 2-3 hardening time hour, enhanced productivity;
While unloading ingot, draw and cut bottom glue-line without artificial use steel wire, only need light and slow moving to take, significantly reduce personnel's task difficulty and workload.
The solar energy polycrystal silicon ingot bottom of well cutting is comparatively clean, reduces reclaimed materials polishing difficulty, improves afterbody reclaimed materials recycling quality.
Claims (3)
1. a solar energy polycrystal silicon ingot cutting method, is characterized in that comprising the following steps:
(1) at the reserved foaming agent in cutting pallet middle part;
(2) after solar energy polycrystal silicon ingot is placed between two parties on cutting pallet, in the subcutaneous side's filled and process agent of solar energy polycrystal silicon ingot surrounding;
(3) foaming agent solidified after 2 hours, adopted cutter to remove the glue that overflows;
(4) after having cut, while unloading ingot, move light and slowly, prevent from rocking.
2. solar energy polycrystal silicon ingot cutting method according to claim 1, is characterized in that: described reserved foaming agent area is 800mm*800mm.
3. solar energy polycrystal silicon ingot cutting method according to claim 1, is characterized in that: the one-sided length of described solar energy polycrystal silicon ingot surrounding skin is that 840mm, width are 20mm, and filling thickness is 6-8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310713468.0A CN103786272A (en) | 2013-12-23 | 2013-12-23 | Solar polycrystalline silicon ingot cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310713468.0A CN103786272A (en) | 2013-12-23 | 2013-12-23 | Solar polycrystalline silicon ingot cutting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103786272A true CN103786272A (en) | 2014-05-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310713468.0A Pending CN103786272A (en) | 2013-12-23 | 2013-12-23 | Solar polycrystalline silicon ingot cutting method |
Country Status (1)
| Country | Link |
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| CN (1) | CN103786272A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105365062A (en) * | 2015-10-27 | 2016-03-02 | 镇江环太硅科技有限公司 | Method for cutting off heads and tails for squarer |
| CN106738396A (en) * | 2016-12-21 | 2017-05-31 | 晶科能源有限公司 | A kind of evolution apparatus and method of polycrystal silicon ingot |
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| CN102441944A (en) * | 2010-09-30 | 2012-05-09 | 常州天合光能有限公司 | Squaring method of polycrystalline ingot |
| CN202507409U (en) * | 2011-10-11 | 2012-10-31 | 光为绿色新能源股份有限公司 | Cast ingot bonding tray |
| CN102848481A (en) * | 2012-10-12 | 2013-01-02 | 蠡县英利新能源有限公司 | Cutting process for cutting silicon ingot |
| CN103128865A (en) * | 2011-11-29 | 2013-06-05 | 浙江昱辉阳光能源有限公司 | Silicon wafer cutting method |
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
| CN101710603A (en) * | 2009-12-04 | 2010-05-19 | 洛阳鸿泰半导体有限公司 | Multi-line cutting process combination for processing solar cell silicon wafer |
| CN101913210A (en) * | 2010-08-19 | 2010-12-15 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot ripping method |
| CN102441944A (en) * | 2010-09-30 | 2012-05-09 | 常州天合光能有限公司 | Squaring method of polycrystalline ingot |
| CN102059749A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon wafer by using steel wire with diameter of 0.1mm |
| CN102021656A (en) * | 2010-12-17 | 2011-04-20 | 上海超日(洛阳)太阳能有限公司 | Silicon ingot sticking method |
| CN202507409U (en) * | 2011-10-11 | 2012-10-31 | 光为绿色新能源股份有限公司 | Cast ingot bonding tray |
| CN103128865A (en) * | 2011-11-29 | 2013-06-05 | 浙江昱辉阳光能源有限公司 | Silicon wafer cutting method |
| CN102848481A (en) * | 2012-10-12 | 2013-01-02 | 蠡县英利新能源有限公司 | Cutting process for cutting silicon ingot |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105365062A (en) * | 2015-10-27 | 2016-03-02 | 镇江环太硅科技有限公司 | Method for cutting off heads and tails for squarer |
| CN106738396A (en) * | 2016-12-21 | 2017-05-31 | 晶科能源有限公司 | A kind of evolution apparatus and method of polycrystal silicon ingot |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140514 |
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| RJ01 | Rejection of invention patent application after publication |