CN102172996B - Crystal immersing and cutting method - Google Patents
Crystal immersing and cutting method Download PDFInfo
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- CN102172996B CN102172996B CN201110037399.7A CN201110037399A CN102172996B CN 102172996 B CN102172996 B CN 102172996B CN 201110037399 A CN201110037399 A CN 201110037399A CN 102172996 B CN102172996 B CN 102172996B
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Abstract
The invention provides a crystal immersing and cutting method which is applied in a multi-wire cutting device for cutting a crystal silicon ingot. The multi-wire cutting device at least comprises a cutting table for carrying a crystal silicon ingot to be cut and a multi-wire cutting system for running cutting wires, and the method comprises the following steps: firstly setting a liquid containing groove on the cutting table of the multi-wire cutting device; secondly, placing the crystal silicon ingot to be cut in the liquid containing groove; then injecting a cutting liquid into the liquid containing groove, and immersing the crystal silicon ingot to be cut in the cutting liquid; and further running the cutting wires at a high speed so that the cutting wires oppress the liquid containing groove and are immersed in the crystal silicon ingot to be cut in the cutting liquid so as to further enable the cutting wires to cut the crystal silicon ingot to be cut in the cutting liquid while cutting the side wall of the liquid containing groove and further enable the cutting liquid to flow out from a gap on the cut side wall of the liquid containing groove during the cutting process so as to be conductive to circulation. By adopting the method, the problem that cutting sand which is brought into a cutting region during the cutting process is rare, and the cutting efficiency is further greatly improved.
Description
Technical field
The present invention relates to a kind of multi-wire saw technology, particularly relate to a kind of being applied in multi-wire saw equipment to increase the brilliant cutting method of soaking to enhance productivity with sand amount of cutting liquid.
Background technology
Multi-wire saw technology is current more advanced crystalline silicon process technology in the world, and its principle is that the steel wire by a high-speed motion drives the cutting blade material being attached on steel wire to rub and reach cutting effect hard brittle materials such as semiconductors.Multi-wire saw technology has compared with traditional knife saw sheet, grinding wheel and inner circle cutting that to have efficiency high, and production capacity is high, precision advantages of higher, and multi-wire saw technology is to adopt at present the most widely the hard brittle material cutting techniques such as semiconductor.
Existing multi-wire saw equipment such as crystalline silicon ingot cutting machine etc. at least includes conventionally: frame, be arranged in described frame for carrying the workbench of crystalline silicon ingot, wire storage tube for wrapping wire, a plurality of guide rollers and liftable cutting roller etc., in to the cutting process of crystalline silicon ingot, steel wire as line of cut passes through the guiding of tens guide rollers, on between a plurality of cutting rollers, form a bracing cable net, and crystalline silicon ingot to be processed is while being fixed on described workbench, cutting roller is lowered, and compression pump effect under, the cutting liquid automatic spraying device being assemblied on equipment is sprayed to cutting liquid (cutting agent) at the cutting position of steel wire and crystalline silicon ingot, by steel wire, drive cutting liquid to move back and forth, utilize the abrasive sand in cutting liquid to produce cutting to workpiece, so that crystalline silicon ingot is once cut into several sections simultaneously.In this course, the cutting liquid that is sprayed to cutting part only accounts for about 20% ratio of total sprinkling amount, in other words, the cutting liquid nearly 80% of the actual sprinkling of described cutting liquid automatic spraying device has all been wasted, and the cutting liquid that this part is wasted is difficult for reclaiming, be unfavorable for cutting down finished cost; Moreover, what in the cutting of workpiece wound, form due to the line of cut of high-speed cruising is a superfine cutting gap, guarantee that the cutting liquid that above-mentioned cutting liquid automatic spraying device sprays falls into also non-easy thing of this gap fully, so in actual cutting process, in time, has and on line of cut, does not carry the situation that cutting liquid cuts and occur, and then is unfavorable for guaranteeing the cutting quality of workpiece.
For this reason, in some multi-wire saw equipment, adopted diamond wire as line of cut, because described diamond wire is the diamond wire that top layer has diamond dust, select this kind of diamond wire in process to reduce cutting liquid use amount, but, in actual cutting process, find, on described diamond wire, the diamond dust above it is not utilized with workpiece contact portion, thereby, still fail to solve the problem of waste.Thereby, still fail thoroughly to solve cutting efficiency problem.
So, how a kind of multi-line cutting method is provided, thoroughly to improve cutting efficiency problem, real is the current problem demanding prompt solution of dealer of association area.
Summary of the invention
The shortcoming of prior art, the object of the present invention is to provide a kind of brilliant cutting method of soaking in view of the above, too high by the production cost of wasting in a large number and causing in cutting process in order to solve cutting liquid, and the efficiency that thoroughly solves free sand cutting mode.
For achieving the above object and other relevant objects, the invention provides a kind of brilliant cutting method of soaking, be applied in the multi-wire saw equipment of sliced crystal silicon ingot, described multi-wire saw equipment at least has for carrying the multi-wire saw system of cutting bed and the operation line of cut of crystalline silicon ingot to be cut, it is characterized in that, said method comprising the steps of: first, on the cutting bed of described multi-wire saw equipment, enclose and form an appearance liquid bath; Secondly, described crystalline silicon ingot to be cut is positioned in described appearance liquid bath; Then, in described appearance liquid bath, inject cutting liquid, and described crystalline silicon ingot to be cut is immersed in described cutting liquid; Then, start described multi-wire saw system, line of cut described in high-speed cruising; Make described line of cut oppress described appearance liquid bath and be immersed in the crystalline silicon ingot to be cut in described cutting liquid, so that described line of cut is while cutting the sidewall of described appearance liquid bath, cutting is arranged in the crystalline silicon ingot to be cut of described cutting liquid in the lump, and in cutting process, described cutting liquid flows out from the opening position of cut appearance liquid bath sidewall, to recycle.
Of the present invention, soak in brilliant cutting method, the degree of depth of described appearance liquid bath is greater than the height of described crystalline silicon ingot to be cut.The surrounding sidewall of described appearance liquid bath is liquid islocation plate material, particularly, described liquid islocation plate material can be the easy cuts sheet material of single material or combines for the hard plate material of multi-disc longitudinal separation setting and described easy cuts sheet material, wherein, the position to be cut of the corresponding described crystalline silicon ingot to be cut of described easy cuts sheet material.Described easy cuts sheet material is glass plate, organic plastic plate, resin plate, slabstone.Described hard plate material is metallic plate.Described line of cut is steel wire or diamond wire.
Of the present invention, soak in brilliant cutting method, when described crystalline silicon ingot to be cut is placed in described appearance liquid bath and the surrounding sidewall of described appearance liquid bath be reserved with gap, to guarantee that each surface of described crystalline silicon ingot to be cut is immersed in described cutting liquid completely, and be that described cutting liquid flows out headspace from the gap of cut appearance liquid bath sidewall.
As mentioned above, it is of the present invention that to soak brilliant cutting method be mainly that being immersed in of crystalline silicon ingot to be cut carried out to cutting operation in cutting liquid, utilization rate to guarantee that having of cutting liquid is higher like this, and be beneficial to recovery, simultaneously, also realized fully contact between line of cut, workpiece and cutting liquid completely, and then guaranteed the cutting quality of workpiece, compared with prior art, thereby the invention solves cutting liquid, in cutting process, be fully utilized and greatly improve cutting efficiency problem, before also thoroughly having solved simultaneously with the problem of sand mode inefficiency.
Accompanying drawing explanation
Fig. 1 is shown as the brilliant cutting method flow chart of steps of soaking of the present invention.
Fig. 2 is shown as the brilliant cutting method correspondence position between line of cut, appearance liquid bath and crystalline silicon ingot to be cut in specific implementation process that soaks of the present invention and is related to schematic diagram.
Fig. 3 A to Fig. 3 F is shown as application implementation step view of soaking brilliant cutting method of the present invention.
The specific embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by content disclosed in the present specification.The present invention can also be implemented or be applied by the other different specific embodiment, and the every details in this description also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
The invention provides a kind of brilliant cutting method of soaking, be applied in the multi-wire saw equipment of sliced crystal silicon ingot, described multi-wire saw equipment at least has for carrying the multi-wire saw system (not shown) of cutting bed and the operation line of cut of crystalline silicon ingot to be cut, in concrete embodiment, described multi-wire saw system at least includes conventionally: frame, be arranged in described frame the wire storage tube for wrapping wire, for driving described wire storage tube to realize the servomotor of high-speed cruising line of cut, a plurality of for changing the guide roller of line of cut direction of routing, and can rise or decline to carry out a plurality of cutting rollers of depth of cut adjusting etc., before to the cutting of crystalline silicon ingot, above-mentioned line of cut is by the guiding of tens guide rollers, on between a plurality of cutting rollers, form a bracing cable net, be suspended from described crystalline silicon ingot to be cut with operation to be cut.
Need special instruction ground to be, above-mentioned multi-wire saw system should be in multi-wire saw equipment must obligato part, also be the known technology of the art personnel simultaneously, thereby in the present embodiment, for know-why clearly of the present invention, concrete structure for multi-wire saw system does not illustrate, and hereby states clearly.
The diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
Refer to Fig. 1 to Fig. 3 F, Fig. 1 is shown as the brilliant cutting method flow chart of steps of soaking of the present invention; Fig. 2 is shown as the brilliant cutting method correspondence position between line of cut, appearance liquid bath and crystalline silicon ingot to be cut in specific implementation process that soaks of the present invention and is related to schematic diagram; Fig. 3 A to Fig. 3 F is shown as application implementation step view of soaking brilliant cutting method of the present invention.As shown in the figure, described cutting method comprises the following steps:
First perform step S1, utilize sheet material to enclose on the cutting bed 1 of described multi-wire saw equipment and form an appearance liquid bath 2, be state as shown in Figure 3A, in present embodiment, the degree of depth of described appearance liquid bath 2 is greater than the height of described crystalline silicon ingot to be cut 3.The surrounding sidewall of described appearance liquid bath 2 is liquid islocation plate material, particularly, described liquid islocation plate material can be the easy cuts sheet material of single material, for example, be single glass plate, organic plastic plate, resin plate, slabstone, with convenient described line of cut, cut, also can contain and carry cutting liquid simultaneously.
In another embodiment, the surrounding sidewall of above-mentioned appearance liquid bath (not giving diagram in present embodiment) also can combine for hard plate material and the described easy cuts sheet material of multi-disc longitudinal separation setting, wherein, the position to be cut of the corresponding described crystalline silicon ingot to be cut of described easy cuts sheet material.Described easy cuts sheet material, cuts with convenient described line of cut.Wherein, described hard plate material is for example metallic plate.Then perform step S2.
In step S2, described crystalline silicon ingot 3 to be cut is positioned in described appearance liquid bath 2; Be state as shown in Figure 3 B, in present embodiment, described crystalline silicon ingot to be cut 3 is placed on described appearance liquid bath 2 when interior and the surrounding sidewall of described appearance liquid bath 2 is reserved with gap, with a step of injecting cutting liquid after guaranteeing, can make each surface of described crystalline silicon ingot to be cut 3 be immersed in described cutting liquid completely, and be that described cutting liquid flows out headspace from the gap of cut appearance liquid bath 2 sidewalls.Then perform step S3.
In step S3, to the interior injection cutting liquid 4 of described appearance liquid bath 2, and described crystalline silicon ingot to be cut 3 is immersed in described cutting liquid 4, due in step S2, described crystalline silicon ingot 3 to be cut is reserved with gap with the surrounding sidewall of described appearance liquid bath 2; Moreover the degree of depth of described appearance liquid bath 2 is greater than again the height of described crystalline silicon ingot to be cut 3.Thereby each surface of described crystalline silicon ingot 3 to be cut is immersed in described cutting liquid 4 completely, is state as shown in Figure 3 C, then performs step S4.
In step S4, start described multi-wire saw system, line of cut 5 described in high-speed cruising; In present embodiment, the described line of cut 5 of selecting can be steel wire, also can have for top layer the diamond wire of diamond dust, and the speed of service of described line of cut 5 is 1000m/min.Then perform step S5.
In step S5, make the described line of cut 5 described appearance liquid baths 2 of compressing and be immersed in the crystalline silicon ingot to be cut 3 in described cutting liquid 4, be state as shown in Figure 3 D.
When described line of cut 5 high-speed cruising, described line of cut 5 starts cutting by the top of described appearance liquid bath 2 sidewalls, along with described cutting roller declines gradually, depth of cut increases gradually, described line of cut 5 also must cut the crystalline silicon ingot to be cut 3 that is arranged in described cutting liquid 4 in the lump, and in cutting process, described cutting liquid 4 flows out from the gap (not indicating) of cut appearance liquid bath 2 sidewalls, its liquid level also declines thereupon, and the cutting liquid 4 that the opening position of calm liquid bath 2 sidewalls flows out also can be recycled easily, the recycling bin (not shown) of a cutting liquid 4 is for example set below described appearance liquid bath 2, so that the last recycling bin that flows into of the cutting liquid 4 that the opening position of calm liquid bath 2 sidewalls flows out is in order to circulation.Be the state as shown in Fig. 3 E.
When described line of cut 5 is cut to the bottom of described appearance liquid bath 2 sidewalls by the top of described appearance liquid bath 2 sidewalls, described crystalline silicon ingot to be cut 3 is also cut completely, now, the cutting liquid 4 being originally injected in described appearance liquid bath 2 is also discharged from completely, is the state as shown in Fig. 3 F.Now just extensible described cutting bed 1, takes off the crystalline silicon ingot having cut.
In sum, the present invention carries out cutting operation by being immersed in of crystalline silicon ingot to be cut in cutting liquid, utilization rate to guarantee that having of cutting liquid is higher like this, and be beneficial to recovery, meanwhile, also realize fully contact between line of cut, workpiece and cutting liquid completely, and then guaranteed the cutting quality of workpiece, compared with prior art, the invention solves cutting liquid and by the production cost of wasting in a large number and causing, crossed the problems such as high in cutting process.Also thoroughly solved the former problem with sand mode inefficiency simultaneously.So compared with prior art, the present invention has effectively overcome various shortcoming of the prior art and greatly enhanced productivity, further improve equipment utilization and be worth.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any personage who has the knack of this technology all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (4)
1. one kind is soaked brilliant cutting method, be applied in the multi-wire saw equipment of sliced crystal silicon ingot, described multi-wire saw equipment at least has for carrying the multi-wire saw system of cutting bed and the operation line of cut of crystalline silicon ingot to be cut, it is characterized in that, said method comprising the steps of:
(1) on the cutting bed of described multi-wire saw equipment, enclose and form an appearance liquid bath; The surrounding sidewall of described appearance liquid bath is liquid islocation plate material, the easy cuts sheet material that described liquid islocation plate material is single material; Or described liquid islocation plate material is that hard plate material and the described easy cuts sheet material of multi-disc longitudinal separation setting combines, wherein, the position to be cut of the corresponding described crystalline silicon ingot to be cut of described easy cuts sheet material;
(2) described crystalline silicon ingot to be cut is positioned in described appearance liquid bath; When described crystalline silicon ingot to be cut is placed in described appearance liquid bath and the surrounding sidewall of described appearance liquid bath be reserved with gap;
(3) in described appearance liquid bath, inject cutting liquid, and described crystalline silicon ingot to be cut is immersed in described cutting liquid;
(4) start described multi-wire saw system, line of cut described in high-speed cruising; Described line of cut is the diamond wire that top layer has diamond dust, and the speed of service of described line of cut is 1000m/min;
(5) make described line of cut oppress described appearance liquid bath and be immersed in the crystalline silicon ingot to be cut in described cutting liquid, so that described line of cut is while cutting the sidewall of described appearance liquid bath, cutting is arranged in the crystalline silicon ingot to be cut of described cutting liquid in the lump, and in cutting process, described cutting liquid flows out from the opening position of cut appearance liquid bath sidewall, to recycle.
2. according to claim 1ly soak brilliant cutting method, it is characterized in that: the degree of depth of described appearance liquid bath is greater than the height of described crystalline silicon ingot to be cut.
3. according to claim 1ly soak brilliant cutting method, it is characterized in that: described easy cuts sheet material is glass plate, organic plastic plate, slabstone.
4. according to claim 1ly soak brilliant cutting method, it is characterized in that: described hard plate material is metallic plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110037399.7A CN102172996B (en) | 2011-02-14 | 2011-02-14 | Crystal immersing and cutting method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110037399.7A CN102172996B (en) | 2011-02-14 | 2011-02-14 | Crystal immersing and cutting method |
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| CN102172996A CN102172996A (en) | 2011-09-07 |
| CN102172996B true CN102172996B (en) | 2014-09-24 |
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| CN201110037399.7A Active CN102172996B (en) | 2011-02-14 | 2011-02-14 | Crystal immersing and cutting method |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102615723A (en) * | 2012-04-14 | 2012-08-01 | 无锡市协清机械制造有限公司 | Mortar cyclic utilization device of multi-wire cutting machine |
| CN102785297A (en) * | 2012-08-20 | 2012-11-21 | 上海日进机床有限公司 | Multiline cutting method and equipment |
| CN103009489B (en) * | 2012-12-11 | 2015-07-01 | 江苏协鑫硅材料科技发展有限公司 | Method and device for cutting silicon ingot |
| JP6318637B2 (en) * | 2014-01-17 | 2018-05-09 | 日立金属株式会社 | Cutting method of high hardness material with multi-wire saw |
| CN103921361A (en) * | 2014-04-29 | 2014-07-16 | 南通综艺新材料有限公司 | Steel wire technology for cutting solar silicon wafers |
| CN104290206A (en) * | 2014-09-18 | 2015-01-21 | 苏州市汇峰机械设备有限公司 | Wire cutting machine mortar device |
| TWI571339B (en) * | 2014-11-05 | 2017-02-21 | 國立臺灣科技大學 | The methodology of cutting semi/non-conductive material using wedm |
| CN105922465B (en) * | 2016-04-26 | 2018-05-04 | 北京世纪金光半导体有限公司 | A kind of method of mortar cutting large size silicon-carbide body |
| CN110202707B (en) * | 2019-06-19 | 2021-04-20 | 广东先导先进材料股份有限公司 | Multi-wire cutting device and cutting fluid supply assembly thereof |
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Effective date of registration: 20180529 Address after: 314400 4 buildings in No. 17, Shi Dai Road, Haining Economic Development Zone, Haining, Jiaxing, Zhejiang Patentee after: Haining Dijin science and Technology Co., Ltd. Address before: No. 1358, nine dry road, Si Jing Town, Songjiang District, Shanghai Patentee before: Shanghai Nissin Machine Tool Co., Ltd. |
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