CN103779166A - Etching device reaction chamber electrode and etching device - Google Patents
Etching device reaction chamber electrode and etching device Download PDFInfo
- Publication number
- CN103779166A CN103779166A CN201410022519.XA CN201410022519A CN103779166A CN 103779166 A CN103779166 A CN 103779166A CN 201410022519 A CN201410022519 A CN 201410022519A CN 103779166 A CN103779166 A CN 103779166A
- Authority
- CN
- China
- Prior art keywords
- electrode
- reaction chamber
- hole
- etching apparatus
- etching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides an etching device reaction chamber electrode and an etching device, and pertains to the technical field of display device manufacture. When electrode holes of an existing dry etching device are blocked, the whole electrode needs to be disassembled and the disassembly process is complex; according to the invention, the problem can be solved. The etching device reaction chamber electrode of the invention comprises a flat plate. The flat plate is provided with a plurality of first through holes. The electrode further comprises a plurality of embedment elements provided with second through holes. The embedment elements are embedded into the first through holes. The etching device of the invention comprises the above etching device reaction chamber electrode. According to the invention, the maintenance of the etching device reaction chamber electrode is more time-saving and labor-saving.
Description
Technical field
The invention belongs to display unit manufacturing technology field, be specifically related to a kind of etching apparatus
The electrode of reaction chamber and etching apparatus.
Background technology
In Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal Display is called for short TFT-LCD) manufacture craft, etching is one of important technique, and etching is divided dry method and wet etching.As shown in Figure 1, dry etching is to utilize radio-frequency power supply 6 provocative reaction gases 2 to generate low temperature plasma 3, in reaction, produce ion and free radical, ion and free radical and the substance reaction not covered by photoresist being deposited on substrate 4 generate volatile materials, thereby the design transfer that mask plate is stipulated is to substrate.
For existing dry etching equipment, as shown in Figures 2 and 3, its reaction chamber comprises upper electrode 1 and lower electrode 5, upper electrode 1 is a flat board, on it, be uniform-distribution with electrode hole 11, electrode hole 11 is generally manhole, and electrode hole 11 is for importing reaction chamber by reacting gas 2, due to the gas flow uniformity is had relatively high expectations, electrode hole 11 diameters are less.After long-time use, the surrounding of electrode hole 11 has a lot of product depositions, causing electrode hole 11 apertures to diminish even stops up, thereby gas conducting does not freely cause gas flow distribution inhomogeneous, and then cause etching insufficient, directly cause product defective, thereby need to upper electrode 1 be dismantled, be repaired or change.
Inventor finds that in prior art, at least there are the following problems: when the electrode hole of upper electrode occurs to stop up, because upper electrode and electrode hole are taked Integral design, all again generally that maximum life uses, the often situation of generating electrodes hole plug, even and a little local electrode hole stops up, just whole upper electrode need to be pulled down, cause upper electrode dismounting more frequent, and when dismounting in, is extremely loaded down with trivial details, plate electrode maintenance also needs the long period, thereby often cause equipment normally to move, have a strong impact on the mobility of equipment.
Summary of the invention
Technical problem to be solved by this invention comprises, occur electrode integral to be pulled down and dismantled and extremely loaded down with trivial details problem while obstruction for the electrode hole of existing dry etching equipment, a kind of electrode and etching apparatus of etching apparatus reaction chamber are provided, and it does not need integral demounting electrode just can repair the electrode hole stopping up.
The technical scheme that solution the technology of the present invention problem adopts is a kind of electrode of etching apparatus reaction chamber, comprise a flat board, flat board is provided with multiple the first through holes, and described electrode also comprises multiple inserts with the second through hole, and described insert embeds in described the first through hole.
The flat board of the electrode of etching apparatus reaction chamber of the present invention is provided with through hole, insert has the second through hole that can be used as electrode hole, insert is embedded in the first through hole, in the time of generating electrodes hole plug, insert can be pulled down and placed under repair or change from the first through hole, and do not need whole electrode to pull down, therefore save the time of safeguarding electrode, improve production efficiency.
Preferably, described insert is bolt, and the first through hole is internal thread hole, and described bolt is connected with the first through hole by its external screw thread.
Preferably, the material of described bolt is anticorrosive.
Further preferably, described anticorrosive is pottery or Teflon.
Preferably, one end of described insert has head, and described head has the surface contacting with described flat board, and described surface is provided with groove, and described electrode also comprises packing ring, and described packing ring is located in described groove.
Further preferably, the shape of described groove and packing ring is annular or side's annular.
Further preferably, described packing ring adopts corrosion resistant material.
Further described corrosion resistant material is perfluorinate anti-corrosive rubber material.
Preferably, described the second through hole cross section be shaped as circular or square.
The technical scheme that solution the technology of the present invention problem adopts is a kind of etching apparatus, comprises the electrode of above-mentioned etching apparatus reaction chamber.
Etching apparatus of the present invention comprises the electrode of above-mentioned etching apparatus reaction chamber, and because the maintenance of described electrode is more time saving and energy saving, therefore, the performance of etching apparatus of the present invention is more perfect, is easy to safeguard.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of existing dry etching;
Fig. 2 is the upper electrode structural representation of existing reaction chamber;
Fig. 3 is the structural representation of the electrode hole of the upper electrode of existing reaction chamber;
Fig. 4 is the electrode structure schematic diagram of embodiments of the invention;
Fig. 5 is the structural representation that the insert of the electrode of embodiments of the invention matches with the first through hole;
Fig. 6 is the insert of electrode and the structural representation of the first through hole assembling of embodiments of the invention.
Wherein Reference numeral is: 1, upper electrode; 11, electrode hole; 12, the first through hole; 2, reacting gas; 3, plasma; 4, substrate; 5, lower electrode; 6, radio-frequency power supply; 7, insert; 71, the second through hole; 72, groove; 73, packing ring; 8, flat board.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
The embodiment of the present invention provides a kind of electrode of etching apparatus reaction chamber, and described etching apparatus is preferably dry etching equipment, and described electrode is preferably the upper electrode of dry etching equipment reaction chamber.Described dry etching equipment is used in the manufacture process of liquid crystal display, organic light emitting diode display etc. the rete depositing on substrate is carried out to etching.
As shown in Figures 4 to 6, the electrode of the present embodiment comprises a flat board 8, and dull and stereotyped 8 are provided with multiple the first through holes 12, and described electrode also comprises multiple inserts 7 with the second through hole 71, and insert 7 embeds in described the first through hole 12.
Preferably, being shaped as of the second through hole 71 cross sections of insert 7 is circular or square, and more preferably circular, manhole is easier to machine-shaping.The second through hole 71 is as electrode hole, and for reacting gas is imported in reaction chamber, the size of the second through hole 71 can be measure-alike with existing electrode hole.
Preferably, insert 7 is bolt, and the first through hole 12 is internal thread hole, and described bolt is connected with the first through hole 12 by its external screw thread.Obviously, adopt bolt to coordinate with the first through hole 12, when electrode hole occurs to stop up need to safeguard time, bolt need be screwed out from the first through hole 12, can easily bolt be pulled down, thus make the maintenance of electrode more time saving and energy saving.
Preferably, the material of described bolt adopts anticorrosive.Described anticorrosive is pottery or Teflon more preferably.
Preferably, one end of described bolt has head, and described head is provided with groove 72 with dull and stereotyped 8 surfaces that contact, and described electrode also comprises packing ring 73, and packing ring 73 is located in described groove 72.Further preferred, groove 72 is annular or side's annular with the shape of packing ring 73.
Further preferred, packing ring 73 adopts corrosion resistant material, and described corrosion resistant material is further preferably perfluorinate anti-corrosive rubber material.
Obviously, bolt adopts anticorrosive, in the process that can avoid the electrode hole on bolt to contact with reacting gas, is corroded, and avoids electrode hole to stop up, and can effectively extend the useful life of electrode.Packing ring 73 also adopts anticorrosive, thereby can avoid packing ring 73 to be corroded by reacting gas, guarantees the sealing property of packing ring 73.
The flat board 8 of the electrode of the etching apparatus reaction chamber of the present embodiment is provided with the first through hole 12, and insert 7 has the second through hole 71 as electrode hole, and insert 7 is embedded in the first through hole 12.In the time that electrode hole (i.e. the second through hole 71) occurs to stop up, insert 7 can be pulled down and placed under repair or change from the first through hole 12, and not need whole electrode to pull down, therefore more convenient to the maintenance of electrode, and save the time of safeguarding electrode, improved production efficiency.
The present embodiment also provides a kind of etching apparatus, comprises the electrode of above-mentioned etching apparatus reaction chamber, certainly also should comprise as other known structures such as drive circuits, is not described in detail at this.
The etching apparatus of the present embodiment comprises the electrode of above-mentioned etching apparatus reaction chamber, and because the maintenance of described electrode is more time saving and energy saving, therefore, the performance of the etching apparatus of the present embodiment is more perfect, and applicability is strong, is easy to safeguard.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. an electrode for etching apparatus reaction chamber, comprises a flat board, and flat board is provided with multiple the first through holes, it is characterized in that, described electrode also comprises multiple inserts with the second through hole, and described insert embeds in described the first through hole.
2. the electrode of etching apparatus reaction chamber according to claim 1, is characterized in that, described insert is bolt, and the first through hole is internal thread hole, and described bolt is connected with the first through hole by its external screw thread.
3. the electrode of etching apparatus reaction chamber according to claim 1 and 2, is characterized in that, the material of described bolt is anticorrosive.
4. the electrode of etching apparatus reaction chamber according to claim 3, is characterized in that, described anticorrosive is pottery or Teflon.
5. the electrode of etching apparatus reaction chamber according to claim 1 and 2, is characterized in that, one end of described insert has head, described head has the surface contacting with described flat board, described surface is provided with groove, and described electrode also comprises packing ring, and described packing ring is located in described groove.
6. the electrode of etching apparatus reaction chamber according to claim 5, is characterized in that, the shape of described groove and packing ring is annular or side's annular.
7. the electrode of etching apparatus reaction chamber according to claim 5, is characterized in that, described packing ring adopts corrosion resistant material.
8. the electrode of etching apparatus reaction chamber according to claim 7, is characterized in that, described corrosion resistant material is perfluorinate anti-corrosive rubber material.
9. the electrode of etching apparatus reaction chamber according to claim 1, is characterized in that, being shaped as of described the second through hole cross section is circular or square.
10. an etching apparatus, is characterized in that, comprises the electrode of the etching apparatus reaction chamber as described in claim 1 to 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022519.XA CN103779166A (en) | 2014-01-17 | 2014-01-17 | Etching device reaction chamber electrode and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022519.XA CN103779166A (en) | 2014-01-17 | 2014-01-17 | Etching device reaction chamber electrode and etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779166A true CN103779166A (en) | 2014-05-07 |
Family
ID=50571299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410022519.XA Pending CN103779166A (en) | 2014-01-17 | 2014-01-17 | Etching device reaction chamber electrode and etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779166A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105513958A (en) * | 2015-12-25 | 2016-04-20 | 武汉华星光电技术有限公司 | Etching equipment and reaction trough device |
| WO2019055406A1 (en) * | 2017-09-13 | 2019-03-21 | Applied Materials, Inc. | Substrate support for reduced damage substrate backside |
| CN111243933A (en) * | 2020-02-18 | 2020-06-05 | 信利(仁寿)高端显示科技有限公司 | Upper electrode of dry etching equipment and dry etching equipment |
| CN113594012A (en) * | 2021-07-28 | 2021-11-02 | 柯良节 | Plasma etching anode plate |
| CN113922784A (en) * | 2021-10-19 | 2022-01-11 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1838387A (en) * | 2005-03-25 | 2006-09-27 | 东京毅力科创株式会社 | Etching method and apparatus |
| US20110070740A1 (en) * | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| CN102082063A (en) * | 2009-11-30 | 2011-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrode plate and reaction chamber for medium and low frequency plasma processing equipment |
| CN202688436U (en) * | 2012-07-02 | 2013-01-23 | 中节能太阳能科技有限公司 | Detachable special gas hole |
| CN203333759U (en) * | 2013-05-03 | 2013-12-11 | 晶澳太阳能有限公司 | Gas path system for PECVD (plasma enhanced chemical vapor deposition) coating at silicon solar cell manufacturing section |
-
2014
- 2014-01-17 CN CN201410022519.XA patent/CN103779166A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1838387A (en) * | 2005-03-25 | 2006-09-27 | 东京毅力科创株式会社 | Etching method and apparatus |
| US20110070740A1 (en) * | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| CN102082063A (en) * | 2009-11-30 | 2011-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrode plate and reaction chamber for medium and low frequency plasma processing equipment |
| CN202688436U (en) * | 2012-07-02 | 2013-01-23 | 中节能太阳能科技有限公司 | Detachable special gas hole |
| CN203333759U (en) * | 2013-05-03 | 2013-12-11 | 晶澳太阳能有限公司 | Gas path system for PECVD (plasma enhanced chemical vapor deposition) coating at silicon solar cell manufacturing section |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105513958A (en) * | 2015-12-25 | 2016-04-20 | 武汉华星光电技术有限公司 | Etching equipment and reaction trough device |
| WO2019055406A1 (en) * | 2017-09-13 | 2019-03-21 | Applied Materials, Inc. | Substrate support for reduced damage substrate backside |
| CN111183512A (en) * | 2017-09-13 | 2020-05-19 | 应用材料公司 | Substrate support for reducing damage to backside of substrate |
| CN111183512B (en) * | 2017-09-13 | 2023-09-26 | 应用材料公司 | Substrate support for reducing damage to the backside of a substrate |
| US11955362B2 (en) | 2017-09-13 | 2024-04-09 | Applied Materials, Inc. | Substrate support for reduced damage substrate backside |
| CN111243933A (en) * | 2020-02-18 | 2020-06-05 | 信利(仁寿)高端显示科技有限公司 | Upper electrode of dry etching equipment and dry etching equipment |
| CN113594012A (en) * | 2021-07-28 | 2021-11-02 | 柯良节 | Plasma etching anode plate |
| CN113922784A (en) * | 2021-10-19 | 2022-01-11 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN113922784B (en) * | 2021-10-19 | 2024-04-05 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103779166A (en) | Etching device reaction chamber electrode and etching device | |
| BR112015002657A8 (en) | apparatus and method for plasma coating a substrate, in particular a press plate | |
| BR112015032908B1 (en) | METHOD FOR COATING AT LEAST ONE WORKPIECE HAVING A TIB2 LAYER | |
| CN201215800Y (en) | Upper electrode for semiconductor etching device | |
| WO2013019425A3 (en) | Sputter-etch tool and liners | |
| CN106702350A (en) | Air inlet assembly and reaction cavity | |
| CN203788539U (en) | Static electricity elimination device of rubber roller | |
| CN104347459A (en) | Cover plate, bearing device and plasma processing equipment | |
| CN203617248U (en) | Improved ordinary pressure plasma processing device | |
| CN204881309U (en) | Tube sheet structure of moving about of overlength cooler | |
| CN102629549B (en) | Wet etching equipment and method thereof | |
| CN207531152U (en) | A kind of double rings electrode coplanar discharge plasma producing apparatus | |
| CN203272105U (en) | Diaphragm pump cover plate | |
| CN103730322A (en) | Improved normal pressure plasma processing device | |
| CN104299881A (en) | Plasma etching device | |
| CN103794428A (en) | Etching device and etching method | |
| CN107641798A (en) | Improve the tubular type PERC battery graphite boats that EL corners black and stuck point blacks | |
| CN107641799A (en) | Improve the tubular type PERC battery graphite boats that EL corners black and stuck point blacks | |
| CN204918761U (en) | Avoid exoelectric shower head of hollow cathode | |
| CN202210474U (en) | Efficient high-voltage foil etcher with uniform fluid distribution and forced degasification functions | |
| CN203690252U (en) | ICP etching machine with temperature test function | |
| CN203333759U (en) | Gas path system for PECVD (plasma enhanced chemical vapor deposition) coating at silicon solar cell manufacturing section | |
| CN203210245U (en) | Socket wrench | |
| CN101693991B (en) | Plasma-enhanced chemical vapor deposition PECVD equipment | |
| CN205097134U (en) | Blind hole bearing disassembly body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140507 |