CN103762252B - 一种太阳能电池的栅线结构 - Google Patents
一种太阳能电池的栅线结构 Download PDFInfo
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- CN103762252B CN103762252B CN201410034608.6A CN201410034608A CN103762252B CN 103762252 B CN103762252 B CN 103762252B CN 201410034608 A CN201410034608 A CN 201410034608A CN 103762252 B CN103762252 B CN 103762252B
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- 208000002173 dizziness Diseases 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- 239000004332 silver Substances 0.000 abstract description 6
- 239000002002 slurry Substances 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 3
- 241000127225 Enceliopsis nudicaulis Species 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001424688 Enceliopsis Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 206010042772 syncope Diseases 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410034608.6A CN103762252B (zh) | 2014-01-25 | 2014-01-25 | 一种太阳能电池的栅线结构 |
Applications Claiming Priority (1)
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CN201410034608.6A CN103762252B (zh) | 2014-01-25 | 2014-01-25 | 一种太阳能电池的栅线结构 |
Publications (2)
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CN103762252A CN103762252A (zh) | 2014-04-30 |
CN103762252B true CN103762252B (zh) | 2015-12-09 |
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CN201410034608.6A Active CN103762252B (zh) | 2014-01-25 | 2014-01-25 | 一种太阳能电池的栅线结构 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101710596A (zh) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | 一种硅太阳能电池 |
CN103050552A (zh) * | 2013-01-09 | 2013-04-17 | 奥特斯维能源(太仓)有限公司 | 一种太阳能电池正面栅线及其电池组件生产方法 |
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- 2014-01-25 CN CN201410034608.6A patent/CN103762252B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101710596A (zh) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | 一种硅太阳能电池 |
CN103050552A (zh) * | 2013-01-09 | 2013-04-17 | 奥特斯维能源(太仓)有限公司 | 一种太阳能电池正面栅线及其电池组件生产方法 |
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CN103762252A (zh) | 2014-04-30 |
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Address after: No. 1, Tenghui Road, Chang Kun Industrial Park, Suzhou, Changshou City, Jiangsu Patentee after: Suzhou Tenghui Photovoltaic Technology Co., Ltd. Address before: No. 1, Tenghui Road, Chang Kun Industrial Park, Suzhou, Changshou City, Jiangsu Patentee before: Zhongli Talesun Solar Technology Co., Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211026 Address after: 223800 No. 211, Zhongxing East Road, economic development zone, Siyang County, Suqian City, Jiangsu Province Patentee after: Siyang Tenghui photoelectric Co.,Ltd. Patentee after: SUZHOU TALESUN SOLAR TECHNOLOGIES Co.,Ltd. Address before: 215542 No. 1, Tenghui Road, Changkun Industrial Park, Shajiabang Town, Changshu City, Suzhou City, Jiangsu Province Patentee before: SUZHOU TALESUN SOLAR TECHNOLOGIES Co.,Ltd. |
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