CN102769072A - N型晶硅太阳能电池及其制备方法 - Google Patents
N型晶硅太阳能电池及其制备方法 Download PDFInfo
- Publication number
- CN102769072A CN102769072A CN2012102713466A CN201210271346A CN102769072A CN 102769072 A CN102769072 A CN 102769072A CN 2012102713466 A CN2012102713466 A CN 2012102713466A CN 201210271346 A CN201210271346 A CN 201210271346A CN 102769072 A CN102769072 A CN 102769072A
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- silicon chip
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- phosphorus
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- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 136
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 136
- 239000010703 silicon Substances 0.000 claims abstract description 136
- 238000009792 diffusion process Methods 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011574 phosphorus Substances 0.000 claims abstract description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 21
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 35
- 239000002002 slurry Substances 0.000 claims description 21
- 230000005855 radiation Effects 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 230000003628 erosive effect Effects 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 3
- 230000000415 inactivating effect Effects 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000000505 pernicious effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210271346.6A CN102769072B (zh) | 2012-07-31 | 2012-07-31 | N型晶硅太阳能电池及其制备方法 |
DE112013003789.0T DE112013003789T5 (de) | 2012-07-31 | 2013-07-30 | Kristalline N-Silikon-Solarzelle und deren Herstellungsverfahren |
PCT/CN2013/080443 WO2014019503A1 (zh) | 2012-07-31 | 2013-07-30 | N型晶硅太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210271346.6A CN102769072B (zh) | 2012-07-31 | 2012-07-31 | N型晶硅太阳能电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102769072A true CN102769072A (zh) | 2012-11-07 |
CN102769072B CN102769072B (zh) | 2014-12-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210271346.6A Active CN102769072B (zh) | 2012-07-31 | 2012-07-31 | N型晶硅太阳能电池及其制备方法 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102769072B (zh) |
DE (1) | DE112013003789T5 (zh) |
WO (1) | WO2014019503A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077975A (zh) * | 2013-01-05 | 2013-05-01 | 中山大学 | 一种低成本n型双面太阳电池及其制备方法 |
WO2014019503A1 (zh) * | 2012-07-31 | 2014-02-06 | 英利集团有限公司 | N型晶硅太阳能电池及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105185850A (zh) * | 2015-08-17 | 2015-12-23 | 英利集团有限公司 | 选择性背场结构的制备工艺与n型太阳能电池的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101800266A (zh) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | 一种选择性发射极晶体硅太阳能电池的制备方法 |
CN102292818A (zh) * | 2009-03-11 | 2011-12-21 | Lg电子株式会社 | 太阳能电池及其制造方法、以及形成杂质区的方法 |
CN102437238A (zh) * | 2011-11-30 | 2012-05-02 | 晶澳(扬州)太阳能科技有限公司 | 一种用于晶体硅太阳电池硼掺杂的方法 |
CN102487102A (zh) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | 太阳能电池及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
CN101853899B (zh) * | 2010-03-31 | 2012-03-14 | 晶澳(扬州)太阳能光伏工程有限公司 | 一种利用局域背场制备太阳能电池的方法 |
CN102769072B (zh) * | 2012-07-31 | 2014-12-10 | 英利集团有限公司 | N型晶硅太阳能电池及其制备方法 |
-
2012
- 2012-07-31 CN CN201210271346.6A patent/CN102769072B/zh active Active
-
2013
- 2013-07-30 WO PCT/CN2013/080443 patent/WO2014019503A1/zh active Application Filing
- 2013-07-30 DE DE112013003789.0T patent/DE112013003789T5/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102292818A (zh) * | 2009-03-11 | 2011-12-21 | Lg电子株式会社 | 太阳能电池及其制造方法、以及形成杂质区的方法 |
CN101800266A (zh) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | 一种选择性发射极晶体硅太阳能电池的制备方法 |
CN102487102A (zh) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | 太阳能电池及其制备方法 |
CN102437238A (zh) * | 2011-11-30 | 2012-05-02 | 晶澳(扬州)太阳能科技有限公司 | 一种用于晶体硅太阳电池硼掺杂的方法 |
Non-Patent Citations (1)
Title |
---|
C.DURAN等: "Bifacial solar cells with selective B-BSF by laser doping", 《24TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE》, 25 September 2009 (2009-09-25) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014019503A1 (zh) * | 2012-07-31 | 2014-02-06 | 英利集团有限公司 | N型晶硅太阳能电池及其制备方法 |
CN103077975A (zh) * | 2013-01-05 | 2013-05-01 | 中山大学 | 一种低成本n型双面太阳电池及其制备方法 |
CN103077975B (zh) * | 2013-01-05 | 2015-07-08 | 中山大学 | 一种低成本n型双面太阳电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102769072B (zh) | 2014-12-10 |
WO2014019503A1 (zh) | 2014-02-06 |
DE112013003789T5 (de) | 2015-06-25 |
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C06 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220926 Address after: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee after: A New Energy Technology (Quzhou) Co.,Ltd. Address before: 071051 No.722 Cuiyuan street, Baoding City, Hebei Province Patentee before: YINGLI Group Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee after: Yidao New Energy Technology Co.,Ltd. Address before: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee before: A New Energy Technology (Quzhou) Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |