CN103745685B - 有源矩阵式有机发光二极管面板驱动电路及驱动方法 - Google Patents
有源矩阵式有机发光二极管面板驱动电路及驱动方法 Download PDFInfo
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Abstract
本发明提供一种有源矩阵式有机发光二极管面板驱动电路及驱动方法,该驱动电路包括:有源矩阵式有机发光二极管面板(2)、分别与该有源矩阵式有机发光二极管面板(2)电性连接的栅极驱动器(4)和源极驱动器(6)、分别与该源极驱动器(6)电性连接的时序控制器(8)和可编程伽玛校正缓冲电路晶片(10),所述时序控制器(8)还分别与栅极驱动器(4)及可编程伽玛校正缓冲电路晶片(10)电性连接;所述时序控制器(8)通过两组栅极控制信号控制所述栅极驱动器(4),所述源极驱动器(6)提供数据信号给有源矩阵式有机发光二极管面板(2),所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧。
Description
技术领域
本发明涉及平面显示领域,尤其涉及一种有源矩阵式有机发光二极管面板驱动电路及驱动方法。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。现有的平面显示装置主要包括液晶显示器(Liquid Crystal Display,LCD)及有机电致发光器件(Organic Electroluminescence Device,OELD),也称为有机发光二极管(Organic Light Emitting Diode,OLED)。
有机电致发光器件具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性,因此受到广泛的关注,并作为新一代的显示方式,已开始逐渐取代传统液晶显示装置,被广泛应用在手机屏幕、电脑显示器、全彩电视机等领域。有机电致发光器件与传统的液晶显示器不同,其无需背光源,直接在玻璃基板上设置非常薄的有机材料涂层,当有电流通过时,这些有机材料涂层就会发光。
现有的有机发光二极管按驱动方式分类,包括:无源矩阵式有机发光二极管(Passive-matrix organic light emitting diode,PMOLED)与有源矩阵式有机发光二极管(Active-matrix organic light emitting diode,AMOLED)。由于平面显示的制程技术及材料的进步,有源矩阵式有机发光二极管已慢慢地成为未来平面显示装置的主流。
请参阅图1,为现有的有源矩阵式有机发光二极管面板的驱动电路,该驱动电路采用两个薄膜晶体管100、200和一个存储电容300实现,通过在存储电容300充电后施加一控制电压于第二薄膜晶体管200的栅极,使第二薄膜晶体管200处于饱和区,由此为有源矩阵式有机发光二极管面板提供电流并使其发光。该结构的驱动电路虽然结构简单,但由于第二薄膜晶体管200长时间受到电子的影响,这将影响到第二薄膜晶体管200的阈值电压Vth,进而会改变有源矩阵式有机发光二极管面板的电流,使得有源矩阵式有机发光二极管面板的一致性(uniformity)受到影响,造成有源矩阵式有机发光二极管面板显示品质下降。
发明内容
本发明的目的在于提供一种有源矩阵式有机发光二极管面板驱动电路,通过将数据信号中的数据帧切为八个具有相等时间的子帧信号,以脉冲宽度调制驱动方式来对存储电容进行充电,提高了有源矩阵式有机发光二极管面板的一致性,提升了有源矩阵式有机发光二极管面板的显示品质。
本发明的另一目的在于提供一种有源矩阵有机发光二极管面板驱动方法,该方法采用脉冲宽度调制驱动方式来对内部像素驱动电路的存储电容进行充电,提高了有源矩阵式有机发光二极管面板的一致性,提升了有源矩阵式有机发光二极管面板的显示品质。
为实现上述目的,本发明提供一种有源矩阵式有机发光二极管面板驱动电路,包括:有源矩阵式有机发光二极管面板、与该有源矩阵式有机发光二极管面板电性连接的栅极驱动器、与该有源矩阵式有机发光二极管面板电性连接的源极驱动器、与该源极驱动器电性连接的时序控制器、与该源极驱动器电性连接的可编程伽玛校正缓冲电路晶片,所述时序控制器还分别与栅极驱动器及可编程伽玛校正缓冲电路晶片电性连接;所述时序控制器通过两组栅极控制信号控制所述栅极驱动器,所述源极驱动器提供数据信号给有源矩阵式有机发光二极管面板,所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧。
所述有源矩阵式有机发光二极管面板包括数个内部像素驱动电路,每一内部像素驱动电路包括:一第一薄膜晶体管、一第二薄膜晶体管、一存储电容、一栅极线及一数据线,所述第一薄膜晶体管具有第一栅极、第一漏极及第一源极,所述第二薄膜晶体管具有第二栅极、第二漏极及第二源极,所述第一栅极与栅极线电性连接,所述第一源极与数据线电性连接,所述第一漏极分别与第二栅极、存储电容的一端电性连接,所述存储电容的另一端及第二源极用于连接驱动电源,所述第二漏极用于连接有机发光二极管。
所述栅极驱动器提供扫描信号给所述有源矩阵式有机发光二极管面板;所述栅极驱动器包括栅极控制电路及与栅极控制电路电性连接的栅极驱动电路,所述栅极控制电路与时序控制器电性连接,所述栅极驱动电路与所述有源矩阵式有机发光二极管面板电性连接,所述栅极驱动电路包括数个栅极驱动芯片;
所述两组栅极控制信号分别为第一组栅极控制信号与第二组栅极控制信号,第一组栅极控制信号包括第一起始控制信号、第一时钟控制信号及第一使能控制信号,第二组栅极控制信号包括第二起始控制信号、第二时钟控制信号及第二使能控制信号;
所述第一组栅极控制信号用于控制所述栅极驱动器使所述有源矩阵式有机发光二极管面板充电,所述第二组栅极控制信号用于控制所述栅极驱动器使所述有源矩阵式有机发光二极管面板放电。
所述源极驱动器包括:源极控制电路及与源极控制电路电性连接的源极驱动电路,所述源极控制电路与所述时序控制器电性连接,所述源极驱动电路与所述有源矩阵式有机发光二极管面板电性连接,所述源极驱动电路包括数个源极驱动芯片;
所述时序控制器通过两个源极控制信号控制所述源极驱动器,该两个源极控制信号分别为低压差分信号及源极起始控制信号。
还包括一与时序控制器电性连接的多路复用器,所述多路复用器具有一高电平输入引脚、一低电平输入引脚、一使能控制信号输入引脚及一选择性输出引脚,所述可编程伽玛校正缓冲电路晶片具有一静态高电压引脚,所述静态高电压引脚上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片输出引脚上的电压,所述使能控制信号输入引脚与所述时序控制器电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片的静态高电压引脚电性连接,所述高电平输入引脚用于输入一高电平信号,所述低电平输入引脚用于输入一低电平信号,所述低电平信号为0V,当所述时序控制器输出一源极使能控制信号至多路复用器,并使该源极使能控制信号控制所述多路复用器输出一0V电压信号至所述可编程伽玛校正缓冲电路晶片的静态高电压引脚时,所述可编程伽玛校正缓冲电路晶片的输出引脚输出的电压为0V,所述输出引脚包括第一至第十四输出引脚。
每一所述数据帧包括八个具有相等时间的子数据帧;所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式。
本发明还提供一种有源矩阵式有机发光二极管面板的驱动方法,包括以下步骤:
步骤101、有源矩阵式有机发光二极管面板驱动电路的时序控制器提供一第一组栅极控制信号给所述有源矩阵式有机发光二极管面板驱动电路的栅极驱动器,所述栅极驱动器在时序控制器的控制下提供一第一扫描信号给有源矩阵式有机发光二极管面板;
步骤102、所述时序控制器提供一低压差分信号及一源极起始控制信号给所述有源矩阵式有机发光二极管面板驱动电路的源极驱动器,并提供一源极使能控制信号给一可编程伽玛校正缓冲电路晶片,所述源极使能控制信号控制所述可编程伽玛校正缓冲电路晶片的输出高电平信号至源极驱动器,源极驱动器在时序控制器及可编程伽玛校正缓冲电路晶片的控制下提供一数据信号给有源矩阵有机发光二极管面板,所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧;
步骤103、根据该第一扫描信号及数据信号,所述有源矩阵有机发光二极管面板中相应的内部像素驱动电路对其对应的存储电容进行充电,进而对该内部像素驱动电路对应的像素充电;
步骤104、所述时序控制器提供第二组栅极控制信号给栅极驱动器,所述栅极驱动器在时序控制器的控制下提供一第二扫描信号给有源矩阵式有机发光二极管面板;
步骤105、所述源极使能控制信号控制所述可编程伽玛校正缓冲电路晶片的输出低电平信号至源极驱动器,根据所述第二扫描信号,源极驱动器在时序控制器及可编程伽玛校正缓冲电路晶片的控制下控制所述内部像素驱动电路中的存储电容放电,进而控制该内部像素驱动电路对应的像素放电。
所述有源矩阵式有机发光二极管面板驱动电路包括:有源矩阵式有机发光二极管面板、与该有源矩阵式有机发光二极管面板电性连接的栅极驱动器、与该有源矩阵式有机发光二极管面板电性连接的源极驱动器、与该源极驱动器电性连接的时序控制器、与该源极驱动器电性连接的可编程伽玛校正缓冲电路晶片,所述时序控制器还分别与栅极驱动器及可编程伽玛校正缓冲电路晶片电性连接;
所述有源矩阵式有机发光二极管面板包括数个内部像素驱动电路,每一内部像素驱动电路包括:一第一薄膜晶体管、一第二薄膜晶体管、一存储电容、一栅极线及一数据线,所述第一薄膜晶体管具有第一栅极、第一漏极及第一源极,所述第二薄膜晶体管具有第二栅极、第二漏极及第二源极,所述第一栅极与栅极线电性连接,所述第一源极与数据线电性连接,所述第一漏极分别与第二栅极、存储电容的一端电性连接,所述存储电容的另一端及第二源极用于连接驱动电源,所述第二漏极用于连接有机发光二极管;
所述栅极驱动器包括栅极控制电路及与栅极控制电路电性连接的栅极驱动电路,所述栅极控制电路与时序控制器电性连接,所述栅极驱动电路与所述有源矩阵式有机发光二极管面板电性连接,所述栅极驱动电路包括数个栅极驱动芯片;
所述第一组栅极控制信号包括第一起始控制信号、第一时钟控制信号及第一使能控制信号,第二组栅极控制信号包括第二起始控制信号、第二时钟控制信号及第二使能控制信号;
所述源极驱动器包括:源极控制电路及与源极控制电路电性连接的源极驱动电路,所述源极控制电路与所述时序控制器电性连接,所述源极驱动电路与所述有源矩阵式有机发光二极管面板电性连接,所述源极驱动电路包括数个源极驱动芯片。
所述有源矩阵式有机发光二极管面板驱动电路还包括一与时序控制器电性连接的多路复用器,所述多路复用器具有一高电平输入引脚、一低电平输入引脚、一使能控制信号输入引脚及一选择性输出引脚,所述可编程伽玛校正缓冲电路晶片具有一静态高电压引脚,所述静态高电压引脚上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片输出引脚上的电压,所述使能控制信号输入引脚与所述时序控制器电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片的静态高电压引脚电性连接,所述高电平输入引脚用于输入一高电平信号,所述低电平输入引脚用于输入一低电平信号,所述低电平信号为0V;所述源极使能控制信号控制选择高电平信号或低电平信号作为选择性输出引脚的输出信号;所述可编程伽玛校正缓冲电路晶片的静态高电压引脚输出的电压与其输出引脚输出的电压变化一致。
每一所述数据帧包括八个具有相等时间的子数据帧;所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式。
本发明的有益效果:本发明的有源矩阵式有机发光二极管面板驱动电路及驱动方法,通过在现有的2T1C驱动电路基础上设置时序控制电路和可编程伽玛校正缓冲电路控制栅极驱动器和源极驱动器,实现该源极驱动器直接放电功能,节省了开发新的能实现放电功能的源极驱动器的成本,同时,以脉冲宽度调制方式作为有源矩阵式有机发光二极管面板驱动电路的驱动方式并将一个完整的数据帧分为八个时间相同的子数据帧,可达到255灰阶,且不影响有源矩阵式有机发光二极管面板的阈值电压Vth,进而不改变有源矩阵式有机发光二极管面板的电流,提高有源矩阵式有机发光二极管面板的一致性,提升有源矩阵式有机发光二极管面板的显示品质。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的有源矩阵式有机发光二极管面板中有机发光二极管的驱动电路的示意图;
图2为本发明有源矩阵式有机发光二极管面板驱动电路的示意图;
图3为图2中有机发光二极管的内部像素驱动电路示意图;
图4为图2中栅极控制电路的电路连接示意图;
图5为图2中时序控制器与可编程伽玛校正缓冲电路晶片的连接示意图;
图6为本发明有源矩阵式有机发光二极管面板驱动电路中八个子数据帧的控制时序图;
图7为本发明有源矩阵式有机发光二极管面板驱动电路的驱动方式控制时序图;
图8为本发明有源矩阵式有机发光二极管面板驱动方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2至图5,本发明提供一种有源矩阵式有机发光二极管面板驱动电路,包括:有源矩阵式有机发光二极管面板2、与该有源矩阵式有机发光二极管面板2电性连接的栅极驱动器4、与该有源矩阵式有机发光二极管面板2电性连接的源极驱动器6、与该源极驱动器6电性连接的时序控制器8、与该源极驱动器6电性连接的可编程伽玛校正缓冲电路晶片(Gamma IC)10,所述时序控制器8还分别与栅极驱动器4及可编程伽玛校正缓冲电路晶片10电性连接,所述时序控制器8通过两组栅极控制信号控制所述栅极驱动器4,所述源极驱动器6提供数据信号给有源矩阵式有机发光二极管面板2,所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧。
所述有源矩阵式有机发光二极管面板2包括数个内部像素驱动电路20,如图3所示。本发明在现有的2T1C驱动电路基础上,采用脉冲宽度调制的方式驱动有源矩阵式有机发光二极管面板2,将每个完整的数据帧切为数个具有相等时间的子数据帧,以实现所需的灰阶,并配以电路控制,进而不影响驱动薄膜晶体管(第二薄膜晶体管23)的阈值电压Vth。每一内部像素驱动电路20包括一第一薄膜晶体管22、一第二薄膜晶体管23、一存储电容24、一栅极线25及一数据线26。所述第一薄膜晶体管22为开关薄膜晶体管,其具有第一栅极g1、第一漏极d1及第一源极s1;所述第二薄膜晶体管23为驱动薄膜晶体管,其具有第二栅极g2、第二漏极d2及第二源极s2。所述第一栅极g1与栅极线25电性连接,第一源极s1与数据线26电性连接,第一漏极d1与第二栅极g2及存储电容24的一端电性连接,所述存储电容24的另一端及第二源极s2用于连接驱动电源,所述第二漏极d2用于连接有机发光二极管27。
当栅极线25被选中时,第一薄膜晶体管22开启,数据线26的电压通过第一薄膜晶体管22对存储电容24充电,存储电容24的电压控制第二薄膜晶体管23的漏极电流;当栅极线25未被选中时,第一薄膜晶体管22截止,储存在存储电容24上的电荷继续维持第二薄膜晶体管23的第二栅极g2电压,以保持第二薄膜晶体管23在该帧时间内的工作状态。
所述栅极驱动器4与每一所述内部像素驱动电路20的栅极线25均电性连接,所述源极驱动器6与每一所述内部像素驱动电路20的数据线26均电性连接。所述栅极驱动器4提供扫描信号给所述有源矩阵式有机发光二极管面板2。所述栅极驱动器4包括栅极控制电路42及与栅极控制电路42电性连接的栅极驱动电路44,所述栅极控制电路42与时序控制器8电性连接,所述栅极驱动电路44与所述有源矩阵式有机发光二极管面板2电性连接,所述栅极驱动电路44包括数个栅极驱动芯片46,该些栅极驱动芯片46用于与内部像素驱动电路20的栅极线25电性连接。
所述两组栅极控制信号分别为第一组栅极控制信号82与第二组栅极控制信号84,第一组栅极控制信号82包括第一起始控制信号(STV)821、第一时钟控制信号(CKV)822及第一使能控制信号(OE)823,第二组栅极控制信号84包括第二起始控制信号(STV2)841、第二时钟控制信号(CKV2)842及第二使能控制信号(OE2)843。
如图4所示,所述第一组栅极控制信号82作为所述栅极驱动器4的输入信号用于控制栅极驱动器4使所述有源矩阵式有机发光二极管面板2充电,所述第二组栅极控制信号84作为所述栅极驱动器4的输入信号用于控制栅极驱动器4使所述有源矩阵式有机发光二极管面板2放电。所述栅极驱动器4的输出信号分别连接各所述内部像素驱动电路20的栅极线25。
所述源极驱动器6包括:源极控制电路62及与源极控制电路62电性连接的源极驱动电路64,所述源极控制电路62与所述时序控制器8电性连接,所述源极驱动电路62与所述有源矩阵式有机发光二极管面板2电性连接,所述源极驱动电路64包括数个源极驱动芯片66。所述时序控制器8通过两个源极控制信号控制所述源极驱动器6,该两个源极控制信号分别为低压差分信号(Mini_LVDS)86及源极起始控制信号(STB)87。
所述有源矩阵式有机发光二极管面板驱动电路还包括一与时序控制器8电性连接的多路复用器(MUX)12,所述多路复用器12具有一高电平输入引脚17、一低电平输入引脚18、一使能控制信号输入引脚及一选择性输出引脚。
所述可编程伽玛校正缓冲电路晶片10具有一静态高电压引脚(STATIC_H)16,所述静态高电压引脚16上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片10输出引脚15上的电压,所述输出引脚15为第一至第十四输出引脚。
所述多路复用器12的使能控制信号输入引脚与所述时序控制器8电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片10的静态高电压引脚16电性连接,所述高电平输入引脚17用于输入一高电平信号,该高电平为电源电压Vdd,所述低电平输入引脚18用于输入一低电平信号,所述低电平信号为0V。
如图5所示,当所述时序控制器8输出一源极使能控制信号88至多路复用器12,并使该源极使能控制信号88控制所述多路复用器12输出一0V电压信号至所述可编程伽玛校正缓冲电路晶片10的静态高电压引脚16时,所述可编程伽玛校正缓冲电路晶片10的输出引脚15输出的电压为0V,进而所述源极驱动器输出也为0V,进一步地,所述数据线26上的电压也为0V,因而通过源极使能控制信号88控制可编程伽玛校正缓冲电路晶片10可以直接实现该源极驱动器6放电的功能,节省了开发新的能实现放电功能的源极驱动器6的成本。
请参阅图6,在本实施例中,每一所述数据帧包括八个具有相等时间的子数据帧,可以达到255灰阶,在2T1C电路基础上,搭配特殊的电路控制即可实现脉冲宽度调制方式,进而不影响驱动薄膜晶体管(第二薄膜晶体管23)的阈值电压Vth,从而改善有源矩阵有机发光二极管面板的一致性。
所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式,其时序图如图7所示,通过栅极驱动器4的第一组栅极控制信号82和第二组栅极控制信号84以及源极驱动器6的源极起始控制信号87与连接可编程伽玛校正缓冲电路晶片10的源极使能控制信号88相互配合实现,进而实现在固定子数据帧的时序下,产生灰阶的效果。图中,第一组栅极控制信号82为传统的控制信号,源极起始控制信号87为传统的源极控制信号,主要用于将源极驱动器6的信号驱动至有源矩阵有机发光二极管面板2上,同时借以第二组栅极控制信号84配合源极使能信号88,即可实现脉冲宽度调制。
本实施例中,以脉冲宽度调制方式作为有源矩阵式有机发光二极管面板驱动电路的驱动方式,可以不影响第二薄膜晶体管23的阈值电压Vth,进而不改变有源矩阵式有机发光二极管面板2的电流,提高有源矩阵式有机发光二极管面板2的一致性,提升有源矩阵式有机发光二极管面板2的显示品质。
请参阅图2至图8,本发明还提供一种有源矩阵有机发光二极管面板的驱动方法,该方法包括以下步骤:
步骤101、有源矩阵式有机发光二极管面板2驱动电路的时序控制器8提供一第一组栅极控制信号82给栅极驱动器4,所述栅极驱动器4在时序控制器8的控制下提供一第一扫描信号给有源矩阵有机发光二极管面板2。所述有源矩阵式有机发光二极管面板驱动电路包括:有源矩阵式有机发光二极管面板2、与该有源矩阵式有机发光二极管面板2电性连接的栅极驱动器4、与该有源矩阵式有机发光二极管面板2电性连接的源极驱动器6、与该源极驱动器6电性连接的时序控制器8、与该源极驱动器6电性连接的可编程伽玛校正缓冲电路晶片10,所述时序控制器8还分别与栅极驱动器4及可编程伽玛校正缓冲电路晶片10电性连接。
所述有源矩阵式有机发光二极管面板2包括数个内部像素驱动电路20,如图3所示。本发明在现有的2T1C驱动电路基础上,采用脉冲宽度调制的方式驱动有源矩阵式有机发光二极管面板2,将每个完整的数据帧切为数个具有相等时间的子数据帧,以实现所需的灰阶,并配以电路控制,进而不影响驱动薄膜晶体管(第二薄膜晶体管23)的阈值电压Vth。每一内部像素驱动电路20包括一第一薄膜晶体管22、一第二薄膜晶体管23、一存储电容24、一栅极线25及一数据线26。所述第一薄膜晶体管22为开关薄膜晶体管,其具有第一栅极g1、第一漏极d1及第一源极s1;所述第二薄膜晶体管23为驱动薄膜晶体管,其具有第二栅极g2、第二漏极d2及第二源极s2。所述第一栅极g1与栅极线25电性连接,第一源极s1与数据线26电性连接,第一漏极d1与第二栅极g2及存储电容24的一端电性连接,所述存储电容24的另一端及第二源极s2用于连接驱动电源,所述第二漏极d2用于连接有机发光二极管27。
当栅极线25被选中时,第一薄膜晶体管22开启,数据线26的电压通过第一薄膜晶体管22对存储电容24充电,存储电容24的电压控制第二薄膜晶体管23的漏极电流;当栅极线25未被选中时,第一薄膜晶体管22截止,储存在存储电容24上的电荷继续维持第二薄膜晶体管23的第二栅极g2电压,以保持第二薄膜晶体管23在该帧时间内的工作状态。
所述栅极驱动器4与每一所述内部像素驱动电路20的栅极线25均电性连接,所述源极驱动器6与每一所述内部像素驱动电路20的数据线26均电性连接。所述栅极驱动器4包括栅极控制电路42及与栅极控制电路42电性连接的栅极驱动电路44,所述栅极控制电路42与时序控制器8电性连接,所述栅极驱动电路44与所述有源矩阵式有机发光二极管面板2电性连接,所述栅极驱动电路44包括数个栅极驱动芯片46,该些栅极驱动芯片46用于与内部像素驱动电路20的栅极线25电性连接。
如图4所示,所述第一组栅极控制信号82包括第一起始控制信号821、第一时钟控制信号822及第一使能控制信号823。所述栅极驱动器4的输出信号分别连接各所述内部像素驱动电路的栅极线25。
步骤102、所述时序控制器8提供一低压差分信号86及一源极起始控制信号87给所述有源矩阵式有机发光二极管面板2驱动电路的源极驱动器6,并提供一源极使能控制信号88给一可编程伽玛校正缓冲电路晶片10,所述源极使能控制信号88控制所述可编程伽玛校正缓冲电路晶片10的输出高电平信号至源极驱动器6,源极驱动器6在时序控制器8及可编程伽玛校正缓冲电路晶片10的控制下提供一数据信号给有源矩阵有机发光二极管面板2,所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧。在本实施例中,每一所述数据帧包括八个具有相等时间的子数据帧。
所述源极驱动器6包括:源极控制电路62及与源极控制电路62电性连接的源极驱动电路64,所述源极控制电路62与所述时序控制器8电性连接,所述源极驱动电路62与所述有源矩阵式有机发光二极管面板2电性连接,所述源极驱动电路64包括数个源极驱动芯片66。
所述有源矩阵式有机发光二极管面板驱动电路还包括一与时序控制器8电性连接的多路复用器(MUX)12,所述多路复用器12具有一高电平输入引脚17、一低电平输入引脚18、一使能控制信号输入引脚及一选择性输出引脚。
所述可编程伽玛校正缓冲电路晶片10具有一静态高电压引脚(STATIC_H)16,所述静态高电压引脚16上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片10输出引脚15上的电压,所述输出引脚15为第一至第十四输出引脚。
所述多路复用器12的使能控制信号输入引脚与所述时序控制器8电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片10的静态高电压引脚16电性连接,所述高电平输入引脚17用于输入一高电平信号,该高电平为电源电压Vdd,所述低电平输入引脚18用于输入一低电平信号,所述低电平信号为0V。所述源极使能控制信号88控制选择高电平信号或低电平信号作为选择性输出引脚的输出信号;所述可编程伽玛校正缓冲电路晶片10的静态高电压引脚16输出的电压与其输出引脚15输出的电压变化一致。
如图5所示,当所述时序控制器8输出一源极使能控制信号88至多路复用器12,并使该源极使能控制信号88控制所述多路复用器12输出一0V电压信号至所述可编程伽玛校正缓冲电路晶片10的静态高电压引脚16时,所述可编程伽玛校正缓冲电路晶片10的输出引脚15输出的电压为0V,进而所述源极驱动器输出也为0V,进一步地,所述数据线26上的电压也为0V,因而通过源极使能控制信号88控制可编程伽玛校正缓冲电路晶片10可以直接实现该源极驱动器6放电的功能,节省了开发新的能实现放电功能的源极驱动器6的成本。
步骤103、根据该第一扫描信号及数据信号,所述有源矩阵有机发光二极管面板2中相应的内部像素驱动电路20对其对应的存储电容24进行充电,进而对该内部像素驱动电路20对应的像素充电。
所述步骤101至103为像素充电过程。
步骤104、所述时序控制器8提供第二组栅极控制信号84给栅极驱动器4,所述栅极驱动器4在时序控制器8的控制下提供一第二扫描信号给有源矩阵式有机发光二极管面板2。
所述第二组栅极控制信号84包括第二起始控制信号841、第二时钟控制信号842及第二使能控制信号843。
步骤105、所述源极使能控制信号88控制所述可编程伽玛校正缓冲电路晶片10的输出低电平信号至源极驱动器6,根据所述第二扫描信号,源极驱动器6在时序控制器8及可编程伽玛校正缓冲电路晶片10的控制下控制所述内部像素驱动电路20中的存储电容24放电,进而控制该内部像素驱动电路20对应的像素放电。
所述步骤104至105为像素放电过程。所述充电、放电的时间间隔可以由时序控制器8控制,进而实现脉冲宽度调制。
请参阅图6,在本实施例中,每一所述数据帧包括八个具有相等时间的子数据帧,可以达到255灰阶,在2T1C电路基础上,搭配特殊的电路控制即可实现脉冲宽度调制方式,进而不影响驱动薄膜晶体管(第二薄膜晶体管23)的阈值电压Vth,从而改善有源矩阵有机发光二极管面板2的一致性。
所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式,其时序图如图7所示,通过栅极驱动器4的第一组栅极控制信号82和第二组栅极控制信号84以及源极驱动器6的源极起始控制信号87与连接可编程伽玛校正缓冲电路晶片10的源极使能控制信号88相互配合实现,进而实现在固定子数据帧的时序下,产生灰阶的效果。图中,第一组栅极控制信号82为传统的控制信号,源极起始控制信号87为传统的源极控制信号,主要用于将源极驱动器6的信号驱动至有源矩阵有机发光二极管面板2上,同时借以第二组栅极控制信号84配合源极使能信号88,即可实现脉冲宽度调制。
综上所述,本发明的有源矩阵式有机发光二极管面板驱动电路及驱动方法,通过在现有的2T1C驱动电路基础上设置时序控制电路和可编程伽玛校正缓冲电路控制栅极驱动器和源极驱动器,实现该源极驱动器直接放电功能,节省了开发新的能实现放电功能的源极驱动器的成本,同时,以脉冲宽度调制方式作为有源矩阵式有机发光二极管面板驱动电路的驱动方式并将一个完整的数据帧分为八个时间相同的子数据帧,可达到255灰阶,且不影响有源矩阵式有机发光二极管面板的阈值电压Vth,进而不改变有源矩阵式有机发光二极管面板的电流,提高有源矩阵式有机发光二极管面板的一致性,提升有源矩阵式有机发光二极管面板的显示品质。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种有源矩阵式有机发光二极管面板驱动电路,其特征在于,包括:有源矩阵式有机发光二极管面板(2)、与该有源矩阵式有机发光二极管面板(2)电性连接的栅极驱动器(4)、与该有源矩阵式有机发光二极管面板(2)电性连接的源极驱动器(6)、与该源极驱动器(6)电性连接的时序控制器(8)、与该源极驱动器(6)电性连接的可编程伽玛校正缓冲电路晶片(10),所述时序控制器(8)还分别与栅极驱动器(4)及可编程伽玛校正缓冲电路晶片(10)电性连接;所述时序控制器(8)通过两组栅极控制信号控制所述栅极驱动器(4),所述源极驱动器(6)提供数据信号给有源矩阵式有机发光二极管面板(2),所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧;
所述两组栅极控制信号分别为第一组栅极控制信号(82)与第二组栅极控制信号(84),所述第一组栅极控制信号(82)用于控制所述栅极驱动器(4)使所述有源矩阵式有机发光二极管面板(2)充电,所述第二组栅极控制信号(84)用于控制所述栅极驱动器(4)使所述有源矩阵式有机发光二极管面板(2)放电。
2.如权利要求1所述的有源矩阵式有机发光二极管面板驱动电路,其特征在于,所述有源矩阵式有机发光二极管面板(2)包括数个内部像素驱动电路(20),每一内部像素驱动电路(20)包括:一第一薄膜晶体管(22)、一第二薄膜晶体管(23)、一存储电容(24)、一栅极线(25)及一数据线(26),所述第一薄膜晶体管(22)具有第一栅极(g1)、第一漏极(d1)及第一源极(s1),所述第二薄膜晶体管(23)具有第二栅极(g2)、第二漏极(d2)及第二源极(s2),所述第一栅极(g1)与栅极线(25)电性连接,所述第一源极(s1)与数据线(26)电性连接,所述第一漏极(d1)分别与第二栅极(g2)、存储电容(24)的一端电性连接,所述存储电容(24)的另一端及第二源极(s2)用于连接驱动电源(28),所述第二漏极(d2)用于连接有机发光二极管(27)。
3.如权利要求1所述的有源矩阵式有机发光二极管面板驱动电路,其特征在于,所述栅极驱动器(4)提供扫描信号给所述有源矩阵式有机发光二极管面板(2);所述栅极驱动器(4)包括栅极控制电路(42)及与栅极控制电路(42)电性连接的栅极驱动电路(44),所述栅极控制电路(42)与时序控制器(8)电性连接,所述栅极驱动电路(44)与所述有源矩阵式有机发光二极管面板(2)电性连接,所述栅极驱动电路(44)包括数个栅极驱动芯片(46);
所述第一组栅极控制信号(82)包括第一起始控制信号(821)、第一时钟控制信号(822)及第一使能控制信号(823),所述第二组栅极控制信号(84)包括第二起始控制信号(841)、第二时钟控制信号(842)及第二使能控制信号(843)。
4.如权利要求1所述的有源矩阵式有机发光二极管面板驱动电路,其特征在于,所述源极驱动器(6)包括:源极控制电路(62)及与源极控制电路(62)电性连接的源极驱动电路(64),所述源极控制电路(62)与所述时序控制器(8)电性连接,所述源极驱动电路(64)与所述有源矩阵式有机发光二极管面板(2)电性连接,所述源极驱动电路(64)包括数个源极驱动芯片(66);
所述时序控制器(8)通过两个源极控制信号控制所述源极驱动器(6),该两个源极控制信号分别为低压差分信号(86)及源极起始控制信号(87)。
5.如权利要求1所述的有源矩阵式有机发光二极管面板驱动电路,其特征在于,还包括一与时序控制器(8)电性连接的多路复用器(12),所述多路复用器(12)具有一高电平输入引脚(17)、一低电平输入引脚(18)、一使能控制信号输入引脚及一选择性输出引脚,所述可编程伽玛校正缓冲电路晶片(10)具有一静态高电压引脚(16),所述静态高电压引脚(16)上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片(10)输出引脚(15)上的电压,所述使能控制信号输入引脚与所述时序控制器(8)电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片(10)的静态高电压引脚(16)电性连接,所述高电平输入引脚(17)用于输入一高电平信号,所述低电平输入引脚(18)用于输入一低电平信号,所述低电平信号为0V,当所述时序控制器(8)输出一源极使能控制信号(88)至多路复用器(12),并使该源极使能控制信号(88)控制所述多路复用器(12)输出一0V电压信号至所述可编程伽玛校正缓冲电路晶片(10)的静态高电压引脚(16)时,所述可编程伽玛校正缓冲电路晶片(10)的输出引脚(15)输出的电压为0V,所述输出引脚(15)包括第一至第十四输出引脚。
6.如权利要求1所述的有源矩阵式有机发光二极管面板驱动电路,其特征在于,每一所述数据帧包括八个具有相等时间的子数据帧;所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式。
7.一种有源矩阵式有机发光二极管面板的驱动方法,其特征在于,包括以下步骤:
步骤101、有源矩阵式有机发光二极管面板(2)驱动电路的时序控制器(8)提供一第一组栅极控制信号(82)给所述有源矩阵式有机发光二极管面板(2)驱动电路的栅极驱动器(4),所述栅极驱动器(4)在时序控制器(8)的控制下提供一第一扫描信号给有源矩阵式有机发光二极管面板(2);
步骤102、所述时序控制器(8)提供一低压差分信号(86)及一源极起始控制信号(87)给所述有源矩阵式有机发光二极管面板(2)驱动电路的源极驱动器(6),并提供一源极使能控制信号(88)给一可编程伽玛校正缓冲电路晶片(10),所述源极使能控制信号(88)控制所述可编程伽玛校正缓冲电路晶片(10)的输出高电平信号至源极驱动器(6),源极驱动器(6)在时序控制器(8)及可编程伽玛校正缓冲电路晶片(10)的控制下提供一数据信号给有源矩阵有机发光二极管面板(2),所述数据信号包括多个数据帧,每一所述数据帧包括数个具有相等时间的子数据帧;
步骤103、根据该第一扫描信号及数据信号,所述有源矩阵有机发光二极管面板(2)中相应的内部像素驱动电路(20)对其对应的存储电容(24)进行充电,进而对该内部像素驱动电路(20)对应的像素充电;
步骤104、所述时序控制器(8)提供第二组栅极控制信号(84)给栅极驱动器(4),所述栅极驱动器(4)在时序控制器(8)的控制下提供一第二扫描信号给有源矩阵式有机发光二极管面板(2);
步骤105、所述源极使能控制信号(88)控制所述可编程伽玛校正缓冲电路晶片(10)的输出低电平信号至源极驱动器(6),根据所述第二扫描信号,源极驱动器(6)在时序控制器(8)及可编程伽玛校正缓冲电路晶片(10)的控制下控制所述内部像素驱动电路(20)中的存储电容(24)放电,进而控制该内部像素驱动电路(20)对应的像素放电。
8.如权利要求7所述的有源矩阵式有机发光二极管面板的驱动方法,其特征在于,所述有源矩阵式有机发光二极管面板驱动电路包括:有源矩阵式有机发光二极管面板(2)、与该有源矩阵式有机发光二极管面板(2)电性连接的栅极驱动器(4)、与该有源矩阵式有机发光二极管面板(2)电性连接的源极驱动器(6)、与该源极驱动器(6)电性连接的时序控制器(8)、与该源极驱动器(6)电性连接的可编程伽玛校正缓冲电路晶片(10),所述时序控制器(8)还分别与栅极驱动器(4)及可编程伽玛校正缓冲电路晶片(10)电性连接;
所述有源矩阵式有机发光二极管面板(2)包括数个内部像素驱动电路(20),每一内部像素驱动电路(20)包括:一第一薄膜晶体管(22)、一第二薄膜晶体管(23)、一存储电容(24)、一栅极线(25)及一数据线(26),所述第一薄膜晶体管(22)具有第一栅极(g1)、第一漏极(d1)及第一源极(s1),所述第二薄膜晶体管(23)具有第二栅极(g2)、第二漏极(d2)及第二源极(s1),所述第一栅极(g1)与栅极线(25)电性连接,所述第一源极(s1)与数据线(26)电性连接,所述第一漏极(d1)分别与第二栅极(g2)、存储电容(24)的一端电性连接,所述存储电容(24)的另一端及第二源极(s2)用于连接驱动电源,所述第二漏极(d2)用于连接有机发光二极管(27);
所述栅极驱动器(4)包括栅极控制电路(42)及与栅极控制电路(42)电性连接的栅极驱动电路(44),所述栅极控制电路(42)与时序控制器(8)电性连接,所述栅极驱动电路(44)与所述有源矩阵式有机发光二极管面板(2)电性连接,所述栅极驱动电路(44)包括数个栅极驱动芯片(46);
所述第一组栅极控制信号(82)包括第一起始控制信号(821)、第一时钟控制信号(822)及第一使能控制信号(823),第二组栅极控制信号(84)包括第二起始控制信号(841)、第二时钟控制信号(842)及第二使能控制信号(843);
所述源极驱动器(6)包括:源极控制电路(62)及与源极控制电路(62)电性连接的源极驱动电路(64),所述源极控制电路(62)与所述时序控制器(8)电性连接,所述源极驱动电路(64)与所述有源矩阵式有机发光二极管面板(2)电性连接,所述源极驱动电路(64)包括数个源极驱动芯片(66)。
9.如权利要求7所述的有源矩阵式有机发光二极管面板的驱动方法,其特征在于,所述有源矩阵式有机发光二极管面板驱动电路还包括一与时序控制器(8)电性连接的多路复用器(12),所述多路复用器(12)具有一高电平输入引脚(17)、一低电平输入引脚(18)、一使能控制信号输入引脚及一选择性输出引脚,所述可编程伽玛校正缓冲电路晶片(10)具有一静态高电压引脚(16),所述静态高电压引脚(16)上的电压恒高于或等于所述可编程伽玛校正缓冲电路晶片(10)输出引脚(15)上的电压,所述使能控制信号输入引脚与所述时序控制器(8)电性连接,所述选择性输出引脚与所述可编程伽玛校正缓冲电路晶片(10)的静态高电压引脚(16)电性连接,所述高电平输入引脚(17)用于输入一高电平信号,所述低电平输入引脚(18)用于输入一低电平信号,所述低电平信号为0V;所述源极使能控制信号(88)控制选择高电平信号或低电平信号作为选择性输出引脚的输出信号;所述可编程伽玛校正缓冲电路晶片(10)的静态高电压引脚(16)输出的电压与其输出引脚(15)输出的电压变化一致。
10.如权利要求7所述的有源矩阵式有机发光二极管面板的驱动方法,其特征在于,每一所述数据帧包括八个具有相等时间的子数据帧;所述有源矩阵式有机发光二极管面板驱动电路的驱动方式为脉冲宽度调制方式。
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GB202004554D0 (en) | 2020-05-13 |
US9472135B2 (en) | 2016-10-18 |
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GB2582458A (en) | 2020-09-23 |
WO2015078087A1 (zh) | 2015-06-04 |
GB2534763A (en) | 2016-08-03 |
GB2582458B (en) | 2021-05-12 |
KR101868715B1 (ko) | 2018-07-17 |
GB2534763B (en) | 2020-10-14 |
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