CN103738916A - Method for low damage processing of gallium arsenide surface quantum dot nucleation site - Google Patents
Method for low damage processing of gallium arsenide surface quantum dot nucleation site Download PDFInfo
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- CN103738916A CN103738916A CN201310732192.0A CN201310732192A CN103738916A CN 103738916 A CN103738916 A CN 103738916A CN 201310732192 A CN201310732192 A CN 201310732192A CN 103738916 A CN103738916 A CN 103738916A
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Abstract
The invention discloses a method for low damage processing of a gallium arsenide surface quantum dot nucleation site. The method comprises the steps of installing a silicon dioxide probe with the tip in a sphere shape on a scanning probe microscope, and fixing cleaned gallium arsenide on a sample table; starting the scanning probe microscope, applying contact pressure of 0.5-1GPa to the probe, and utilizing the probe to perform scanning on gallium arsenide surfaces according to a set scanning track and scanning cycle times. According to the method, various nanometer concave structures can be processed on the gallium arsenide surfaces of different crystal planes and different doping types, needed contact pressure does not cause base body lattice defects, and the method has simplicity in operation and position controllability and is high in flexibility.
Description
Technical field
The present invention relates to the nanoprocessing method of GaAs.
Background technology
Along with scientific and technological progress, quantum device shows wide application prospect in fields such as Photoelectric Detection, quantum dot light emitting, quantum calculation, photovoltaic industries.In order to realize the application of quantum device, first must realize the located growth of quantum dot; And quantum dot is preferentially at the lower nanometer pit forming core of substrate surface chemical potential, by controlling the position of substrate surface nanometer pit, can realize the located growth of quantum dot.GaAs (GaAs) has high electron mobility and direct gap structure, becomes most important Quantum Dots Growth substrate.Therefore, the controlled processing of gallium arsenide surface quantum dot nucleation site (being nanometer groove) receives much concern.
According to different principles, the processing method that is applied at present gallium arsenide surface quantum dot nucleation site (nanometer groove) mainly contains: (1) mechanical impression method: use diamond probe, be pressed under external force GaAs matrix, can directly process the nano-pore of point-like.Plastic deformation and dislocation that the formation of this type of nano-pore depends on GaAs under high contact produce, and the contact that machining needs, higher than 6GPa, produces a large amount of defects after processing.Due to the epitaxially grown non-coherence characteristic of quantum dot, thus as easy as rolling off a log inner its luminescent properties that reduced of quantum dot that conducts to of the defect of matrix.(2) self-assembling method: in molecular beam epitaxial growth cavity, first at gallium arsenide surface deposition gallium drop, also form the interface of being rich in gallium, now the GaAs of interface will be decomposed into arsenic, gallium atom, and arsenic atom diffuses in growth chamber, or drop around again forming core be GaAs.Thus, drop place GaAs matrix material is moved out of gradually, and produces groove.Although the method can form dislocation-free low damaged structure, drop is in gallium arsenide surface random distribution, and the nanometer channel position of processing is uncontrollable.(3) anodizing: the atomic force microscope probe that uses conduction, under electric field action, can be oxidized and be processed to form protruding oxide layer at gallium arsenide surface, by solution etchings such as HF, remove oxide layer subsequently and form the recessed structure of nanometer, process depends on the electric conductivity of probe and sample strongly.Obviously, the method is relatively applicable to the good doped samples of electric conductivity, and is not suitable for unadulterated semi-insulated GaAs to process.In a word, conventional gallium arsenide surface quantum dot nucleation site processing method is faced with the challenges such as machining damage is high, position is uncontrollable, processing conditions is harsh at present.Therefore, controlled, the damaging low gallium arsenide surface quantum dot nucleation site processing method of development position urgently.
Summary of the invention
The low damage processing method that the object of this invention is to provide a kind of gallium arsenide surface quantum dot nucleation site, the method can be processed the recessed structure-quantum dot of various nanometers nucleation site at gallium arsenide surface, required contact does not cause matrix lattice defect, and it is simple to operate, position is controlled, flexibility is high.
The present invention is for realizing its goal of the invention, and the technical scheme adopting is, the low damage processing method of a kind of gallium arsenide surface quantum dot nucleation site, and its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.5-1GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
Mechanism of the present invention and process are:
In open atmospheric environment, there is adsorbed film of water in gallium arsenide surface and silica detecting probe surface, and when scanning, contact surface forms semilune capillary moisture film and at interface, generates GaAs-O-Si molecular bridge; Under 0.5-1GPa contact (this pressure be GaAs surrender critical contact pressure 0.1-0.2 doubly), carrying out along with scanning, GaAs-O-Si molecular bridge is stretched and has stored friction dissipation energy, and molecular bridge fracture is subsequently the Ga-As chemical bond to gallium arsenide surface by energy conduction.There is hydrolysis with the Ga-As that has absorbed energy and generate GaO in the hydrone in adsorbed film of water
xand AsO
yoxide.That is there is friction chemical reaction in silica probe and gallium arsenide surface.Tribochemistry product is removed with the form of abrasive dust.By this kind of approach, GaAs material can be removed under the low contact of 0.1-0.2 times of the critical contact pressure of only surrendering for GaAs.The contact using due to process does not cause machining area surrender, and the recessed structure of nanometer that is formed for quantum dot forming core keeps mono-crystalline structures.
Compared with prior art, the invention has the beneficial effects as follows:
One, process realizes under the atmospheric environment of normal temperature, normal pressure, opening, does not need the severe rugged environments such as vacuum, constant temperature, constant humidity, only needs simple scanning can process required quantum dot nucleation site (the recessed structure of nanometer); In scanning process, do not need probe to apply electric field, do not need subsequent chemistry etching yet; Effectively reduce processing cost and operation easier, working (machining) efficiency is high;
Two, in scanning process, do not need probe to apply electric field, processing does not rely on the electric conductivity of probe, GaAs, not only can be used for the processing of the Semiconductor GaAs of doping, yet can be used for the not adulterating processing of semi-insulating GaAs, has widened range of application.
Critical contact pressure (4.6GPa) when the contact of the 0.5-1GPa that three, process is used is surrendered far below GaAs, and the contact well below the 6GPa of the diamond probe of existing use, therefore the lattice of institute's processing structure below remains mono-crystalline structures, and scanning process is not introduced machining damage.And elaboration products can be cleaned and remove by ultrasonic water.
Four, the parameter such as track while scan during scanning machining, scanning times can be set according to actual requirement, and processing registration, can meet various process requirements, and flexibility is strong.
The radius of curvature of the ball tip of above-mentioned silica probe is 0.5-1.2 μ m.
Below in conjunction with accompanying drawing and concrete embodiment, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is that embodiment mono-method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 2 is that embodiment bis-methods are at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 3 is that embodiment tri-methods are at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 4 is that embodiment four directions method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 5 is that embodiment five methods are at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 6 is that embodiment six methods are at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 7 is that embodiment seven methods are at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 8 be embodiment from all directions method at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Fig. 9 is that the method for embodiment nine is at n-GaAs(100) the AFM figure of the nanohole array that goes out of Surface Machining.
Figure 10 is that the method for embodiment ten is at n-GaAs(100) the AFM figure of the nanometer letter that goes out of Surface Machining.
Figure 11 is that the method for embodiment 11 is at n-GaAs(100) the AFM figure of the taiji pattern of the processing that goes out of Surface Machining.
Figure 12 is that the method for embodiment 12 is at undoped-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.
Figure 13 is that the method for embodiment 13 is at n-GaAs(111) the AFM figure of the nano wire that goes out of A Surface Machining.
Figure 14 is that the method for embodiment 14 is at n-GaAs(111) the AFM figure of the nano wire that goes out of B Surface Machining.
The specific embodiment
Embodiment mono-
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.5GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially n-GaAs(100), the track while scan of setting is that 500nm long straight line, scan cycle number of times are 50, the radius of curvature of the ball tip of the silica probe of use is 1.2 μ m.
After machining, on AFM, change pattern and scan special-purpose silicon nitride probe and can obtain the n-GaAs(100 after processing) AFM figure, is shown in Fig. 1.Fig. 1 illustrates this example at n-GaAs(100) to have gone out length be that the 500nm degree of depth is the nano wire groove of 1.8nm to Surface Machining.
Embodiment bis-
This example and embodiment mono-are basic identical, unique different only: the contact applying to probe changes 0.7GPa into.
Fig. 2 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 2 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 2.1nm to Surface Machining.
Embodiment tri-
This example and embodiment mono-are basic identical, unique different only: the contact applying to probe changes 0.8GPa into.
Fig. 3 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 3 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 2.3nm to Surface Machining.
Embodiment tetra-
This example and embodiment mono-are basic identical, unique different only: the contact applying to probe changes 0.9GPa into.
Fig. 4 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 4 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 2.9nm to Surface Machining.
Embodiment mono-to four shows, working depth with add the contact applying to probe man-hour and become positive correlation.
Embodiment five
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.8GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially n-GaAs(100), the track while scan of setting is that 500nm long straight line, scan cycle number of times are 10, the radius of curvature of the ball tip of the silica probe of use is 1.0 μ m.
Fig. 5 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 5 illustrates this example at n-GaAs(100) Surface Machining gone out length be 500nm, the degree of depth be 1.1nm, nano wire groove.
Embodiment six
This example and embodiment five are basic identical, unique different only: scan cycle number of times changes 40 into.
Fig. 6 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 6 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 2.0nm to Surface Machining.
Embodiment seven
This example and embodiment mono-are basic identical, unique different only: scan cycle number of times changes 80 into.
Fig. 7 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 7 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 3.6nm to Surface Machining.
Embodiment eight
This example and embodiment mono-are basic identical, unique different only: scan cycle number of times changes 120 into.
Fig. 8 is that the example method is at n-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Fig. 8 illustrates this example at n-GaAs(100) to have gone out length be the nano wire groove that 500nm, the degree of depth are 4.5nm to Surface Machining.
Embodiment five to eight shows, working depth becomes positive correlation with the scan cycle number of times that adds man-hour.
Embodiment nine
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 1.0GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially n-GaAs(100), the track while scan of setting is the facing (spacing at adjacent square face center is 800nm) that four length of sides are 250nm, the scan cycle number of times in each facing region is 2 times, and the radius of curvature of the ball tip of the silica probe of use is 0.5 μ m.
Fig. 9 is that the method for embodiment nine is at n-GaAs(100) the AFM figure of the nanohole array that goes out of Surface Machining.Fig. 9 illustrates this example at n-GaAs(100) Surface Machining gone out the nanometer square hole array of a group 2 * 2, and the adjacent square hole length of side is 250nm, and the degree of depth is 6nm, and adjacent holes center distance is 800nm.
Embodiment ten
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.7GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially n-GaAs(100), the track while scan of setting is letter " QDs ", and scan cycle number of times is 50, and the radius of curvature of the ball tip of the silica probe of use is 1 μ m.
Figure 10 is that the example method is at n-GaAs(100) the AFM figure of the nanometer letter that goes out of Surface Machining.Figure 10 illustrates, and this example is at n-GaAs(100) Surface Machining gone out nanometer letter " QDs " recessed pattern, and depth of pattern is 1.9nm.
Embodiment 11
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.8GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially n-GaAs(100), the track while scan of setting is the taiji pattern for the long straight line diameter 2 μ m of 500nm, and scan cycle number of times is 2, and the radius of curvature of the ball tip of the silica probe of use is 1 μ m.
Figure 11 is that the example method is at n-GaAs(100) the AFM figure of the taiji pattern that goes out of Surface Machining.Figure 11 illustrates, and this example is at n-GaAs(100) to have gone out diameter be the taiji pattern of 2 μ m to Surface Machining, the depressed area degree of depth of pattern is 1.5nm.
A low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.8GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
This routine GaAs material is specially undoped-GaAs(100), the track while scan of setting is for being the long straight line of 500nm, and scan cycle number of times is 120, and the radius of curvature of the ball tip of the silica probe of use is 1 μ m.
Figure 12 is for this routine method is at undoped-GaAs(100) the AFM figure of the nano wire that goes out of Surface Machining.Figure 12 illustrates, and this routine method is at undoped-GaAs(100) to have gone out length be the nano wire that 500nm, the degree of depth are 4.8nm to Surface Machining.
Undoped-GaAs(100) be unadulterated semi insulating material, visible, the application's method has broken through the restriction of material electric conductivity, can carry out the processing of quantum dot nucleation site to semi-insulated GaAs.
Embodiment 13
The operation of this example and embodiment dodecyl are originally identical, and different is only that the GaAs material of selecting changes n-GaAs(111 into) A.
Figure 13 is for this routine method is at n-GaAs(111) the AFM figure of the nano wire that goes out of A Surface Machining.Figure 13 illustrates, and this routine method is at n-GaAs(111) to have gone out length be the nano wire that 500nm, the degree of depth are 5.1nm to A Surface Machining.
Embodiment 14
The operation of this example and embodiment dodecyl are originally identical, and different is only that the GaAs material of selecting changes n-GaAs(111 into) B.
Figure 14 is for this routine method is at n-GaAs(111) the AFM figure of the nano wire that goes out of B Surface Machining.Figure 14 illustrates, and this routine method is at n-GaAs(111) to have gone out length be the nano wire that 500nm, the degree of depth are 5.4nm to A Surface Machining.
Above-described embodiment shows, the application's method, and the degree of depth of the recessed structure that it processes and the contact in when scanning become positive correlation with scan cycle number of times.Although continue increase contact and scanning times, still can improve working depth, in embodiment, the degree of depth of number nanometer has been enough to form effective quantum dot nucleation site.Because the method depends on tribochemistry, so the removal of GaAs material does not cause structural damage under extremely low contact, machining area still remains mono-crystalline structures.Meanwhile, tribochemistry effect makes the method not rely on sample electric conductivity, can carry out at the gallium arsenide surface of different crystal faces, different doping types the controlled processing of high flexibility.
Claims (2)
1. a low damage processing method for gallium arsenide surface quantum dot nucleation site, its concrete operations are:
By tip, be that spherical silica probe is arranged on scanning probe microscopy, the GaAs cleaning is fixed on sample stage; Start scanning probe microscopy, to probe, apply the contact of 0.5-1GPa, and probe is scanned at gallium arsenide surface according to track while scan, the scan cycle number of times set.
2. the low damage processing method of a kind of gallium arsenide surface quantum dot according to claim 1 nucleation site, is characterized in that: the radius of curvature of the ball tip of described silica probe is 0.5-1.2 μ m.
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Citations (2)
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|---|---|---|---|---|
| CN102718182A (en) * | 2012-07-10 | 2012-10-10 | 西南交通大学 | Large-area-friction-induced micron-scale processing equipment in multipoint contact mode |
| CN102736410A (en) * | 2012-07-10 | 2012-10-17 | 西南交通大学 | Method for machining large-area nanoimprint silicon die under multi-point contact mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102718182A (en) * | 2012-07-10 | 2012-10-10 | 西南交通大学 | Large-area-friction-induced micron-scale processing equipment in multipoint contact mode |
| CN102736410A (en) * | 2012-07-10 | 2012-10-17 | 西南交通大学 | Method for machining large-area nanoimprint silicon die under multi-point contact mode |
Non-Patent Citations (2)
| Title |
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| C. K. HYON 等: "Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs", 《APPLIED PHYSICS LETTERS》, vol. 77, no. 16, 16 October 2000 (2000-10-16), XP 012026418, DOI: doi:10.1063/1.1318393 * |
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