CN102736410A - Method for machining large-area nanoimprint silicon die under multi-point contact mode - Google Patents
Method for machining large-area nanoimprint silicon die under multi-point contact mode Download PDFInfo
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- CN102736410A CN102736410A CN2012102374325A CN201210237432A CN102736410A CN 102736410 A CN102736410 A CN 102736410A CN 2012102374325 A CN2012102374325 A CN 2012102374325A CN 201210237432 A CN201210237432 A CN 201210237432A CN 102736410 A CN102736410 A CN 102736410A
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Abstract
The invention discloses a method for machining a large-area nanoimprint silicon die under a multi-point contact mode. The method comprises the following steps of: arranging a silicon (100) monocrystal sheet right under a multi-point contact plate with a plurality of micro balls, enabling the silicon sheet and the multi-point contact plate to move perpendicularly and relatively until the silicon sheet contacts the multi-point contact plate and a certain contact load F is reached; enabling the multi-point contact plate and the silicon sheet to do relative motion according to a set track for etching; and after etching, putting the silicon sheet into a KOH solution with the mass percentage of 15 to 25 percent for corrosion for a period of time, thus obtaining the nanoimprint silicon die with a preset structure. The method is implemented under the multi-point contact mode; the pattern, the arrangement mode and the like of the machined nanoimprint silicon die can be convenient to control; and during etching, the silicon sheet is always parallel to the multi-point contact plate. Equipment and raw materials which are used in the method are low in cost; the method is easy to operate; the steps are simple; the silicon (100) monocrystal nanoimprint silicon die with a large area can be machined at one time; and the method has the characteristics of low cost and high efficiency.
Description
Technical field
The present invention relates to a kind of metallic mold for nano-imprint job operation, relate in particular to the large-area nano impression silicon mould job operation under a kind of multiple spot contact mode.
Background technology
Nanosecond science and technology are leading industrys of 21 century, and countries in the world are the emphasis of nanosecond science and technology as research and application, and the unique channel that nano-fabrication technique is moved towards production and lived as nanosecond science and technology receives scientific worker's extensive concern.Nanometer embossing possesses wide application prospect because of advantages such as its resolution are high, speed is fast and cost is low, is included in 2005 editions international semiconductor blueprint.The ultimate principle of nanometer embossing be with one have nano-pattern mould scribbling equal proportion copying nano pattern on the silicon substrate of macromolecular material with mechanical force (high temperature, high pressure).The machining resolution of nanometer embossing does not receive in the photoetching technique physical restriction of short exposure wavelength, and it is only relevant with the minimum feature size of processing mold, therefore has high machining resolution.Character such as the precision of mould, homogeneity, flatness directly exert an influence to the quality of patterned.
The making of mould has at present become the maximum technical bottleneck of nanometer embossing research, and existing manufacturing technology all has defective and limitation separately.For example: (1) direct electronic beam writing technology: on silicon chip, evenly cover one deck resist earlier; And then make public with high-power electron beam; Then developing, remove photoresist, is that mask carries out reactive ion etching with PMMA (polymethylmethacrylate) again, with figure transfer to the Cr layer; Be mask with the Cr layer then, figure transfer is arrived Si or SiO
2On the layer, accomplish characteristic and directly write, obtain having the metallic mold for nano-imprint of feature structure.Obviously, this technical step is complicated, and not easy to operate, working (machining) efficiency is also lower, and receives the influence of beam scatter easily and reduce resolution, simultaneously the electron-beam direct writing apparatus expensive.(2) electroforming process: at first utilize hot press printing technology that the pattern of master mold is transferred on the PVC film; On the PVC film, deposit the Au/Ti Seed Layer subsequently; At last, obtain the nickel mould through the electrodeposit metals technology.The mould roughness that adopts this fabrication techniques to come out is bigger, influences machining precision.Therefore, metallic mold for nano-imprint is made challenges such as being faced with expensive, inefficient, low precision at present.
For advancing the development and the application of nanometer embossing, need the invention manufacturing that a kind of cost is low, process technology that efficient is high, precision is high is used for the nano impression silicon mould.
Summary of the invention
The purpose of this invention is to provide a kind of low cost, high-level efficiency, high-precision nano impression silicon mould job operation.This method is accomplished with subsequent corrosion through the simple characterization to silicon chip under the multiple spot contact mode, and simple to operate, good reproducibility does not need the process equipment of complicacy, costliness.
The technical solution adopted for the present invention to solve the technical problems is: the large-area nano impression silicon mould job operation under a kind of multiple spot contact mode the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: be fixed with the microballoon of a plurality of onesize hardness greater than silicon (100) single-chip in the substrate, the summit of a plurality of microballoons is in the same plane;
(2) make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip;
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 15～25% KOH solution, corrodes 3～8 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Compared with prior art, the invention has the beneficial effects as follows:
One, the present invention delineates under the multiple spot contact mode, is fixed in a plurality of microballoons on the multiple spot contact plate during delineation and walks abreast simultaneously and on a plurality of positions on silicon (100) single-chip, delineate, and delineation efficient is high, the time is short; After delineation was accomplished, (50mm * 50mm) had the nano impression silicon mould of male structure promptly to process large tracts of land at the KOH general corrosion that carried out several minutes.
Two, the present invention need not carry out complicated special processings such as any spray glue, exposure, development to silicon (100) single-chip surface; Do not need extra electric field; Do not rely on extraneous humidity, temperature, only need simple mechanical scratching and subsequent corrosion can accomplish processing, significantly reduced operation; Reduce processing cost, improved working (machining) efficiency.
Two, change microballoon number, size, spacing, the different multiple spot contact plate of arrangement, can process nano impression silicon mould easily with different pattern, applied widely.
In the delineation process of above-mentioned step (2), described silicon (100) single-chip remains parallel with the multiple spot contact plate.
Can guarantee that like this each processing stand is stressed evenly on silicon (100) single-chip, the feasible nanometer teeth mark mould structure uniformity that processes.
The contact load F of above-mentioned setting is 1～600mN/ microballoon.
Such load value can induce silicon (100) single-chip that corresponding physicochemical change takes place, thereby can in follow-up KOH corrosion, produce the mask effect, and processes corresponding male structure effectively.
Below in conjunction with accompanying drawing and concrete embodiment the present invention is done further detailed description.
Description of drawings
Figure 1A is the method (4 contact modes) of the embodiment of the invention one, and silicon (100) single-chip is processed the three-dimensional appearance figure of the planar impression silicon mould of gained, and Figure 1B is the section profile figure of institute's processing structure.
Fig. 2 A is the method (5 contact modes) of the embodiment of the invention two, and silicon (100) single-chip is processed the partial 3-D shape appearance figure that gained crossbanding shape impresses silicon mould, and Fig. 2 B is the section profile figure of institute's processing structure.
Fig. 3 A is the method (5 contact modes) of the embodiment of the invention three, and silicon (100) single-chip is processed the three-dimensional appearance figure of the planar impression silicon mould of gained, and Fig. 3 B is the section profile figure of institute's processing structure.
Embodiment
Embodiment one
Large-area nano impression silicon mould job operation under a kind of multiple spot contact mode the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in the substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F that sets in this example is the 300mN/ microballoon.The number of the microballoon on the multiple spot contact plate is four, and material is a steel.
(2) under the contact load F that sets, make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the multiple spot contact plate.
Concrete delineation track is the track of face scan pattern in this example, and the delineation speed v is 0.3mm/s, and length and width all are 140 μ m, and the score spacing is 2 μ m.
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 25% KOH solution, corrodes 5 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Figure 1A is the planar impressing mould three-dimensional appearance of present embodiment gained figure, and Figure 1B is the contour curve figure of Figure 1A.Can be known that by Figure 1A, Figure 1B four scored area of corresponding four microballoons have formed four face bulge-structures, four bulge-structure geomeries are consistent, highly all are 130nm, and length and width all are 140 μ m.This explanation in the delineation process, the multiple spot contact plate all the time with the silicon mould keeping parallelism, so the contact load approximately equal of each microballoon and silicon face, the face bump height that finally obtains is also consistent, has therefore reached the processing effect of expecting.Than single-point contact delineation pattern, the delineation time of the delineation process of present embodiment be its 1/4th, delineating efficient is its four times.
Embodiment two
Large-area nano impression silicon mould job operation under a kind of multiple spot contact mode the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in the substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F that sets in this example is the 250mN/ microballoon.The number of the microballoon on the multiple spot contact plate is five, and material is a steel.
(2) under the contact load F that sets, make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the multiple spot contact plate.
Concrete delineation track is the track of line sweep pattern in this example, and the delineation speed v is 0.3mm/s, and the delineation number of times is twice, and delineating angle for the first time is 0 °, and delineating angle for the second time is 90 °, and the score spacing is 100 μ m.
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 20% KOH solution, corrodes 3 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Fig. 2 A is the partial 3-D shape appearance figure of the planar impression silicon mould of present embodiment gained, and Fig. 2 B is the contour curve figure of Fig. 2 A.Can know that by Fig. 2 A, Fig. 2 B the width of every nano wire is 20 μ m, centre distance is 100 μ m, highly is 80nm, and cross angle is 90 °, sets with test parameters to conform to.Than single-point contact delineation pattern, the delineation time of the delineation process of present embodiment be its 1/5th, delineating efficient is its five times
Embodiment three
Large-area nano impression silicon mould job operation under a kind of multiple spot contact mode the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in the substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F that sets in this example is the 300mN/ microballoon.The number of the microballoon on the multiple spot contact plate is five, and material is a steel.
(2) under the contact load F that sets, make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the multiple spot contact plate.
Concrete delineation track is the track of face scan pattern in this example, and the delineation speed v is 0.3mm/s, and length and width all are 200 μ m, and the score spacing is 2 μ m.
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 15% KOH solution, corrodes 8 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Fig. 3 A is the three-dimensional appearance figure of present embodiment gained wire impression silicon mould, and Fig. 3 B is the contour curve figure of Fig. 3 A.Can know that by Fig. 3 A, Fig. 3 B scanning area has formed five face bulge-structures, the height of this structure is 130nm, and length and width are 200 μ m, sets with test parameters to conform to.Than single-point contact delineation pattern, the delineation time of the delineation process of present embodiment be its 1/5th, delineating efficient is its five times.
Embodiment four
Large-area nano impression silicon mould job operation under a kind of multiple spot contact mode the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 500nm in the substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F that sets in this example is the 1mN/ microballoon.The number of the microballoon on the multiple spot contact plate is ten, and material is a silicon dioxide.
(2) under the contact load F that sets, make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the multiple spot contact plate.
Concrete delineation track is the track of face scan pattern in this example, and the delineation speed v is 5 μ m/s, and length and width all are 2 μ m, and the score spacing is 20nm.
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 25% KOH solution, corrodes 5 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Above-mentioned embodiment shows; Through selecting suitable multiple spot contact plate; And parameter such as control load, delineation sweep limit, sweep velocity, scanning times; Remain the depth of parallelism of multiple spot contact plate and silicon mould, the inventive method can be processed a plurality of zones in the single work flow, can be used as a kind of large tracts of land, high efficiency nano impression silicon mould process technology.
Claims (3)
1. the impression of the large-area nano under multiple spot contact mode silicon mould job operation the steps include:
(1) silicon (100) single-chip is placed multiple spot contact plate vertical lower position, silicon (100) single-chip and vertically opposite the moving to of multiple spot contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of multiple spot contact plate is: being fixed with a plurality of radius-of-curvature in the substrate is the microballoon of 500nm～250 μ m, and the summit of a plurality of microballoons is in the same plane;
(2) under the contact load F that sets, make multiple spot contact plate and silicon (100) single-chip according to setting the track relative motion, the multiple spot contact plate is delineated silicon (100) single-chip;
(3) after delineation is accomplished, make silicon (100) single-chip break away from the multiple spot contact plate, again silicon (100) single-chip being put into massfraction is 15～25% KOH solution, corrodes 3～8 minutes, promptly obtains having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
2. the large-area nano impression silicon mould job operation under a kind of multiple spot contact mode according to claim 1 is characterized in that in the delineation process of described step (2), described silicon (100) single-chip remains parallel with the multiple spot contact plate.
3. the large-area nano impression silicon mould job operation under a kind of multiple spot contact mode according to claim 1 is characterized in that the contact load F of described setting is 1～600mN/ microballoon.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103738916A (en) * | 2013-12-27 | 2014-04-23 | 西南交通大学 | Method for low damage processing of gallium arsenide surface quantum dot nucleation site |
| CN105195586A (en) * | 2015-08-21 | 2015-12-30 | 长春理工大学 | Diamond coining forming-based front and back double-surface micro-nano structure, and preparation method of array thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101549853A (en) * | 2009-05-13 | 2009-10-07 | 西南交通大学 | Processing method for constructing nano projection structure on surface of single crystal silicon based on friction induction |
| CN101723318A (en) * | 2009-12-03 | 2010-06-09 | 西南交通大学 | Micro-nano manufacturing method for surfaces of quartz and glass materials |
| CN101973507A (en) * | 2010-07-09 | 2011-02-16 | 西南交通大学 | Friction induction-based single crystal quartz surface selective etching method |
| CN102503155A (en) * | 2011-12-01 | 2012-06-20 | 西南交通大学 | Glass surface nanofabrication method based on friction-induced selective etching |
-
2012
- 2012-07-10 CN CN2012102374325A patent/CN102736410B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101549853A (en) * | 2009-05-13 | 2009-10-07 | 西南交通大学 | Processing method for constructing nano projection structure on surface of single crystal silicon based on friction induction |
| CN101723318A (en) * | 2009-12-03 | 2010-06-09 | 西南交通大学 | Micro-nano manufacturing method for surfaces of quartz and glass materials |
| CN101973507A (en) * | 2010-07-09 | 2011-02-16 | 西南交通大学 | Friction induction-based single crystal quartz surface selective etching method |
| CN102503155A (en) * | 2011-12-01 | 2012-06-20 | 西南交通大学 | Glass surface nanofabrication method based on friction-induced selective etching |
Non-Patent Citations (6)
| Title |
|---|
| S. MIYAKE ET AL.: "Nano mechanical processing of silicon by atomic force microscopy", 《KEY ENGINEERING MATERIALS》, vol. 291292, 2005, pages 401 - 406 * |
| S.W. YOUN ET AL.: "Effect of nanoscratch conditions on both deformation behavior and wet-etching characteristics of silicon (1 0 0) surface", 《WEAR》, vol. 261, 2006, pages 328 - 337 * |
| SHOJIRO MIYAKE ET AL.: "Nanoprocessing of silicon by mechanochemical reaction using atomic force microscopy and additional potassium hydroxide solution etching", 《NANOTECHNOLOGY》, vol. 16, 2005, pages 149 - 157 * |
| 华龙: "单晶硅表面摩擦诱导纳米凸结构的摩擦学性能表征", 《中国优秀硕士学位论文全文数据库 工程科技I辑》, no. 4, 15 April 2012 (2012-04-15), pages 020 - 273 * |
| 袁福龙等: "利用AFM和碱溶液在单晶硅表面微加工及其电化学机理", 《黑龙江大学自然科学学报》, vol. 23, no. 3, June 2006 (2006-06-01) * |
| 袁福龙等: "利用AFM对单晶硅表面加工化学反应理论分析", 《黑龙江大学工程学报》, vol. 1, no. 1, November 2010 (2010-11-01), pages 51 - 57 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103738916A (en) * | 2013-12-27 | 2014-04-23 | 西南交通大学 | Method for low damage processing of gallium arsenide surface quantum dot nucleation site |
| CN103738916B (en) * | 2013-12-27 | 2017-12-22 | 西南交通大学 | A kind of low damage processing method of gallium arsenide surface quantum dot nucleation site |
| CN105195586A (en) * | 2015-08-21 | 2015-12-30 | 长春理工大学 | Diamond coining forming-based front and back double-surface micro-nano structure, and preparation method of array thereof |
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