CN102736410B - Method for machining large-area nanoimprint silicon die under multi-point contact mode - Google Patents
Method for machining large-area nanoimprint silicon die under multi-point contact mode Download PDFInfo
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- CN102736410B CN102736410B CN2012102374325A CN201210237432A CN102736410B CN 102736410 B CN102736410 B CN 102736410B CN 2012102374325 A CN2012102374325 A CN 2012102374325A CN 201210237432 A CN201210237432 A CN 201210237432A CN 102736410 B CN102736410 B CN 102736410B
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Abstract
The invention discloses a method for machining a large-area nanoimprint silicon die under a multi-point contact mode. The method comprises the following steps of: arranging a silicon (100) monocrystal sheet right under a multi-point contact plate with a plurality of micro balls, enabling the silicon sheet and the multi-point contact plate to move perpendicularly and relatively until the silicon sheet contacts the multi-point contact plate and a certain contact load F is reached; enabling the multi-point contact plate and the silicon sheet to do relative motion according to a set track for etching; and after etching, putting the silicon sheet into a KOH solution with the mass percentage of 15 to 25 percent for corrosion for a period of time, thus obtaining the nanoimprint silicon die with a preset structure. The method is implemented under the multi-point contact mode; the pattern, the arrangement mode and the like of the machined nanoimprint silicon die can be convenient to control; and during etching, the silicon sheet is always parallel to the multi-point contact plate. Equipment and raw materials which are used in the method are low in cost; the method is easy to operate; the steps are simple; the silicon (100) monocrystal nanoimprint silicon die with a large area can be machined at one time; and the method has the characteristics of low cost and high efficiency.
Description
Technical field
The present invention relates to a kind of metallic mold for nano-imprint job operation, relate in particular to the large-area nano impression silicon mould job operation under a kind of Multi-contact pattern.
Background technology
Nanosecond science and technology are leading industrys of 21 century, and countries in the world are using nanosecond science and technology as the emphasis of studying and applying, and nano-fabrication technique is moved towards the unique channel of producing and living as nanosecond science and technology, be subject to scientific worker's extensive concern.Because its resolution is high, speed is fast and cost is low etc., advantage possesses wide application prospect to nanometer embossing, is included into the international semiconductor blueprint of 2005 editions.The ultimate principle of nanometer embossing is that a mould with nano-pattern is being scribbled to equal proportion copying nano pattern on the silicon substrate of macromolecular material with mechanical force (high temperature, high pressure).The machining resolution of nanometer embossing is not subject in photoetching technique the physical restriction of short exposure wavelength, and it is only relevant with the minimum feature size of processing mold, therefore has high machining resolution.The character such as the precision of mould, homogeneity, flatness directly affect the mass formation of imprinted pattern.
The making of mould has at present become the maximum technical bottleneck of nanometer embossing research, and existing manufacturing technology has defect and limitation separately.For example: (1) direct electronic beam writing technology: elder generation's uniform fold one deck resist on silicon chip, and then exposed with high-power electron beam, then develop, remove photoresist, the PMMA (polymethylmethacrylate) of take again carries out reactive ion etching as mask, figure is transferred on the Cr layer, then take the Cr layer as mask, figure is transferred to Si or SiO
2on layer, complete feature and directly write, obtain having the metallic mold for nano-imprint of feature structure.Obviously, this technical step complexity, not easy to operate, working (machining) efficiency is also lower, and easily is subject to the impact of beam scatter and reduces resolution, simultaneously the electron-beam direct writing apparatus expensive.(2) electroforming process: at first utilize hot press printing technology that the pattern of master mold is transferred on the PVC film; Deposit subsequently the Au/Ti Seed Layer on the PVC film; Finally, obtain the nickel mould by the electrodeposit metals technology.Adopt this fabrication techniques mould roughness out larger, affect machining precision.Therefore, metallic mold for nano-imprint is made challenges such as being faced with expensive, inefficient, low precision at present.
For advancing development and the application of nanometer embossing, the process technology that a kind of cost of needs invention is low, efficiency is high, precision is high is for the manufacture of nano impression silicon mould.
Summary of the invention
The purpose of this invention is to provide a kind of low cost, high-level efficiency, high-precision nano impression silicon mould job operation.The method completes by simple characterization and the subsequent corrosion to silicon chip under the Multi-contact pattern, simple to operate, reproducible, does not need the process equipment of complexity, costliness.
The technical solution adopted for the present invention to solve the technical problems is: the large-area nano impression silicon mould job operation under a kind of Multi-contact pattern the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, then silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of Multi-contact plate is: be fixed with the microballoon that a plurality of onesize hardness is greater than silicon (100) single-chip in substrate, the summit of a plurality of microballoons is in the same plane;
(2) make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip;
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 15～25%, corrode 3～8 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Compared with prior art, the invention has the beneficial effects as follows:
One, the present invention is delineated under the Multi-contact pattern, is fixed in during delineation on a plurality of positions that a plurality of microballoons on the Multi-contact plate walk abreast on silicon (100) single-chip simultaneously and is delineated, and delineation efficiency is high, the time is short; After having delineated, at the KOH general corrosion carried out several minutes, process the nano impression silicon mould that large tracts of land (50mm * 50mm) has male structure.
Two, the present invention does not need the complicated special processings such as any glue spraying, exposure, development are carried out in silicon (100) single-chip surface, do not need extra electric field, do not rely on extraneous humidity, temperature, only need simple mechanical scratching and subsequent corrosion can complete processing, significantly reduced operation, reduce processing cost, improved working (machining) efficiency.
Two, change microballoon number, size, spacing, the different Multi-contact plate of arrangement, can process easily the nano impression silicon mould with different pattern, applied widely.
In the delineation process of above-mentioned step (2), described silicon (100) single-chip remains parallel with the Multi-contact plate.
Can guarantee that like this on silicon (100) single-chip, each processing stand is stressed evenly, make the nanometer dental impression lamps structure uniformity processed.
The contact load F of above-mentioned setting is 1～600mN/ microballoon.
Such load value can induce silicon (100) single-chip that corresponding physicochemical change occurs, thereby can in follow-up KOH corrosion, produce the mask effect, and effectively processes corresponding male structure.
Below in conjunction with accompanying drawing and concrete embodiment, the present invention is described in further detail.
The accompanying drawing explanation
Figure 1A is the method (4 contact modes) of the embodiment of the present invention one, silicon (100) single-chip is carried out to the three-dimensional appearance figure of the planar impression silicon mould that machining obtains, and Figure 1B is the section profile figure of institute's processing structure.
Fig. 2 A is the method (5 contact modes) of the embodiment of the present invention two, and silicon (100) single-chip is carried out to the partial 3-D shape appearance figure that machining obtains crossbanding shape impression silicon mould, and Fig. 2 B is the section profile figure of institute's processing structure.
Fig. 3 A is the method (5 contact modes) of the embodiment of the present invention three, and silicon (100) single-chip is carried out to the three-dimensional appearance figure that machining obtains planar impression silicon mould, and Fig. 3 B is the section profile figure of institute's processing structure.
Embodiment
Embodiment mono-
Large-area nano impression silicon mould job operation under a kind of Multi-contact pattern, the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, then silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of Multi-contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F set in this example is the 300mN/ microballoon.The number of the microballoon on the Multi-contact plate is four, and material is steel.
(2) under the contact load F set, make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the Multi-contact plate.
The track that in this example, concrete delineation track is the face scan pattern, the delineation speed v is 0.3mm/s, and length and width are all 140 μ m, and the delineation distance between centers of tracks is 2 μ m.
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 25%, corrode 5 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Figure 1A is the planar impressing mould three-dimensional appearance of the present embodiment gained figure, the contour curve figure that Figure 1B is Figure 1A.From Figure 1A, Figure 1B, four scored area of corresponding four microballoons have formed four face bulge-structures, and four bulge-structure geomeries are consistent, are highly all 130nm, and length and width are all 140 μ m.This explanation in the delineation process, the Multi-contact plate all the time with the silicon mould keeping parallelism, therefore so the contact load approximately equal of each microballoon and silicon face, the face bump height finally obtained is also consistent, has reached the processing effect of expecting.Than single-point contact delineation pattern, the delineation time of the delineation process of the present embodiment be its 1/4th, delineating efficiency is its four times.
Embodiment bis-
Large-area nano impression silicon mould job operation under a kind of Multi-contact pattern, the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, then silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of Multi-contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F set in this example is the 250mN/ microballoon.The number of the microballoon on the Multi-contact plate is five, and material is steel.
(2) under the contact load F set, make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the Multi-contact plate.
The track that in this example, concrete delineation track is the line sweep pattern, the delineation speed v is 0.3mm/s, and the delineation number of times is twice, and delineating for the first time angle is 0 °, and delineating for the second time angle is 90 °, the delineation distance between centers of tracks is 100 μ m.
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 20%, corrode 3 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Fig. 2 A is the partial 3-D shape appearance figure of the planar impression silicon mould of the present embodiment gained, the contour curve figure that Fig. 2 B is Fig. 2 A.Width by Fig. 2 A, the known every nano wire of Fig. 2 B is 20 μ m, and centre distance is 100 μ m, is highly 80nm, and cross angle is 90 °, with test parameters, sets and conforms to.Than single-point contact delineation pattern, the delineation time of the delineation process of the present embodiment be its 1/5th, delineating efficiency is its five times
Embodiment tri-
Large-area nano impression silicon mould job operation under a kind of Multi-contact pattern, the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, then silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of Multi-contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 160 μ m in substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F set in this example is the 300mN/ microballoon.The number of the microballoon on the Multi-contact plate is five, and material is steel.
(2) under the contact load F set, make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the Multi-contact plate.
The track that in this example, concrete delineation track is the face scan pattern, the delineation speed v is 0.3mm/s, and length and width are all 200 μ m, and the delineation distance between centers of tracks is 2 μ m.
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 15%, corrode 8 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Fig. 3 A is the three-dimensional appearance figure of the present embodiment gained wire impression silicon mould, the contour curve figure that Fig. 3 B is Fig. 3 A.Formed five face bulge-structures by Fig. 3 A, the known scanning area of Fig. 3 B, the height of this structure is 130nm, and length and width are 200 μ m, with test parameters, sets and conforms to.Than single-point contact delineation pattern, the delineation time of the delineation process of the present embodiment be its 1/5th, delineating efficiency is its five times.
Embodiment tetra-
Large-area nano impression silicon mould job operation under a kind of Multi-contact pattern, the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, then silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate are come in contact, and reach the contact load F of setting; Wherein, the concrete formation of Multi-contact plate is: be fixed with the microballoon that a plurality of radius-of-curvature are 500nm in substrate, the summit of a plurality of microballoons is in the same plane.
The contact load F set in this example is the 1mN/ microballoon.The number of the microballoon on the Multi-contact plate is ten, and material is silicon dioxide.
(2) under the contact load F set, make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip; Silicon in the delineation process (100) single-chip remains parallel with the Multi-contact plate.
The track that in this example, concrete delineation track is the face scan pattern, the delineation speed v is 5 μ m/s, and length and width are all 2 μ m, and the delineation distance between centers of tracks is 20nm.
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 25%, corrode 5 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
Above-mentioned embodiment shows, by selecting suitable Multi-contact plate, and the parameter such as control load, delineation sweep limit, sweep velocity, scanning times, remain the depth of parallelism of Multi-contact plate and silicon mould, the inventive method can be processed a plurality of zones in the single process flow process, can be used as a kind of large tracts of land, high efficiency nano impression silicon mould process technology.
Claims (1)
1. the impression of the large-area nano under Multi-contact pattern silicon mould job operation, the steps include:
(1) silicon (100) single-chip is placed in to Multi-contact plate vertical lower position, make again silicon (100) single-chip and vertically opposite the moving to of Multi-contact plate come in contact, and reaching the contact load F of setting, the contact load F of described setting is 1～300mN/ microballoon; Wherein, the concrete formation of Multi-contact plate is: being fixed with a plurality of radius-of-curvature in substrate is the microballoon of 500nm～250 μ m, and the summit of a plurality of microballoons is in the same plane;
(2) under the contact load F set, make Multi-contact plate and silicon (100) single-chip according to setting the track relative motion, the Multi-contact plate is delineated silicon (100) single-chip; Described silicon (100) single-chip remains parallel with the Multi-contact plate;
(3) after having delineated, make silicon (100) single-chip break away from the Multi-contact plate, again silicon (100) single-chip is put into to the KOH solution that massfraction is 15～25%, corrode 3～8 minutes, obtain having silicon (100) the single-chip metallic mold for nano-imprint of setting structure.
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| CN105195586A (en) * | 2015-08-21 | 2015-12-30 | 长春理工大学 | Diamond coining forming-based front and back double-surface micro-nano structure, and preparation method of array thereof |
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