KR100884811B1 - Fabricating method of stamp for large area using imprint lithography - Google Patents

Abstract

A method for fabricating a stamp with a large area is provided to implement the stamp with a minute pattern by using imprint lithography. A resin layer is coated on a substrate(S1). The resin layer is imprinted by using a stamp in which the pattern is formed(S2). The resin layer is hardened (S3). A minute structure pattern is formed by etching the substrate by using the resin layer as an etching barrier(S4). The resin layer is coated on the substrate again(S5). The above processes are performed by changing a position to transfer the pattern.

Description

Fabricating Method of Stamp for Large Area Using Imprint Lithography

The present invention relates to a method of manufacturing a large area stamp, and more particularly, to a method of manufacturing a large area stamp using imprint lithography.

Nano Technology (NT), along with Information Technology (IT) and Biotechnology (BT), is attracting attention as a new paradigm that will lead industrial development in the 21st century. Such nanotechnology is expected to converge with various scientific and technological fields, such as physics, chemistry, biology, electronics, and materials engineering, to overcome the limitations of existing technologies and dramatically improve the quality of life of human beings.

Nanotechnology is divided into a top-down approach and a bottom-up approach, depending on the approach. The approach from top to bottom, as can be seen in the history of semiconductor integrated devices that have evolved over the last few decades, is that existing microstructure fabrication technologies have advanced to nanometer scale to continue to increase information storage capacity and information processing speed. Technology. On the other hand, the approach from the bottom up is to control materials at the atomic or molecular level, or use spontaneous nanostructural phenomena to induce new physical and chemical properties that would not be possible with existing technologies and to use them to create new materials and devices. It is a technique to make.

A representative example of the approach from top to bottom is the optical lithography technique used in the conventional semiconductor device manufacturing process. Technological advances of the 20th century, called the information technology revolution, have relied heavily on miniaturization and integration of semiconductor devices, and the key technology of the semiconductor device manufacturing process is optical lithography. However, optical lithography has a disadvantage in that it is difficult to produce a pitch of 100 nm or less due to the line width limit of the laser due to the characteristics of diffraction and refraction of light. Recently, a process development using nano imprint technology has been attempted.

Nanoimprint technology is a nanodevice fabrication method introduced by Professor Stephen Chu of Princeton University in the mid-1990s, and is attracting attention as a technology that can compensate for the low productivity of electron beam lithography and the disadvantage of expensive optical lithography equipment. That is, the nanoimprint technology produces a stamp having a nanoscale pattern, and imprints such a stamp on the polymer thin film to transfer the nanoscale pattern.

However, when the nanoimprint technology also needs to transfer a large area pattern, there is a problem in that a stamp having a nanoscale pattern must also be manufactured in a corresponding area. Furthermore, large-scale stamps are more expensive to produce than large-area stamps, because patterns of pitch scales below 100 nm use very expensive extreme ultraviolet (EUV) or electron beam (E-Beam) irradiation equipment. do.

Thus, the nanoimprint technology has solved the problem by imprinting a small area stamp several times sequentially as shown in FIG. 6 when the large area pattern needs to be transferred. However, such a nanoimprint technique also has a problem in that a pattern is not connected in a boundary between an imprint region by a small area stamp and another imprint region adjacent thereto. That is, the general nano imprint stamp is difficult to process by irradiating an electron beam (E-Beam) on the outer edge region, and thus exists in a state where no pattern is formed near the outer edge region. As a result, the nanoimprint technique may be overlapped at the boundary between the imprint region and another imprint region adjacent thereto as shown in FIG. 6, thereby damaging the already patterned imprint region.

As described above, the nanoimprint technology according to the prior art requires a large area pattern production cost or a problem in that a uniform pattern cannot be transferred even by a repetitive imprint process, making it difficult to produce a large area stamp having a fine pattern. It is true.

The present invention has been proposed in order to solve the problems of the prior art as described above, a method that can produce a large-area stamp having a fine pattern that was difficult to manufacture in the prior art using imprint lithography more sophisticated and relatively low cost The purpose is to provide.

The manufacturing method of a large area stamp according to the present invention includes a first step of coating a resin layer on a substrate, a second step of imprinting the resin layer with a patterned stamp, and a third step of curing the resin layer. And a fourth step of forming a microstructure pattern by etching the substrate using the resin layer as an etch barrier, and a fifth step of recoating the resin layer on the substrate on which the microstructure pattern is formed. In the manufacturing method of the large area stamp, the second to fourth steps are sequentially performed by changing the position of the pattern on the substrate.

The first step is formed by spin coating the resin layer on the substrate.

In the third step, the resin layer is used as a thermosetting resin, and the resin layer is thermoset. Alternatively, in the third step, the resin layer is used as a photocurable resin and cured by irradiating UV (ultra violet) light.

In the fourth step, the substrate is dry etched or wet etched.

Dissolving the resin layer is further performed between the fourth step and the fifth step.

In the fifth step, the resin layer is coated on the entire surface of the substrate including the region where the microstructure pattern is formed.

The stamp is a stamp in which a pattern of 100 nm or less is formed, and the stamp is formed by any one of extreme ultraviolet (EUV) irradiation equipment or electron beam (E-Beam) irradiation equipment.

The large area stamp manufacturing method of the present invention has the advantage of being able to produce a large area stamp having a fine pattern, which is difficult to manufacture in conventional technology, while using imprint lithography, at a more sophisticated and relatively low cost.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

1 is a flowchart illustrating a method of manufacturing a large area stamp using imprint lithography according to an embodiment of the present invention.

As shown in FIG. 1, the method for manufacturing a large area stamp according to the present embodiment may use an imprint lithography while manufacturing a large area stamp more precisely and at a relatively lower cost than in the prior art. That is, the prior art uses a high cost of extreme ultraviolet (EUV) irradiation equipment or electron beam (E-Beam) irradiation equipment, the manufacturing cost is relatively high to pattern the entire area of the large area stamp. On the other hand, the large-area stamp manufacturing method of the present embodiment is coated with one resin layer as follows (S1), the imprint operation (S2), curing operation (S3), etching operation (S4) sequentially performed on such a resin layer do. Then, the present embodiment is configured to coat the resin layer on the substrate on which the microstructure pattern is formed again (S5), and repeat the imprint operation S2, the curing operation S3, and the etching operation S4 by a set number of times. For this reason, the present embodiment can precisely form the pattern shape while manufacturing a large area stamp at a relatively low cost.

Below, we will look at the large-area stamp manufacturing method of this embodiment in detail for each step.

First, in this embodiment, as shown in FIG. 2A, the resin layer 20 is formed on one surface of the substrate 10 (S1). The substrate 10 is a material of a large-area stamp manufactured according to the present embodiment, and has a planar area that is larger than a standard set so that a pattern may be formed on one surface thereof. The resin layer 20 is spin coated on one surface of the substrate 10 and maintained at a uniform coating thickness.

As shown in FIG. 2B, the present embodiment provides a stamp 30 having a pattern 31 formed on one side on which the resin layer 20 is formed. Here, the stamp 30 on which the pattern 31 is formed is a small area stamp having a smaller contact area than the substrate 10. The small area stamp 30 has a pattern having a precision of several tens of nanometers, such as a pattern of 100 nm or less, by an extreme ultraviolet (EUV) irradiation equipment or an electron beam (E-Beam) irradiation equipment.

As shown in FIG. 2C, the present embodiment imprints the small-area stamp 30 on the resin layer 20 in the next step and separates it again (S2). Then, the pattern 31 of the small area stamp 30 is transferred to the resin layer 20.

Then, the operation of curing the resin layer 20 in which the pattern 22 is formed is performed (S3). The curing of the resin layer 20 is performed by thermosetting the resin layer 20 when the resin layer 20 is a thermosetting resin, and UV (ultra violet) light when the resin layer 20 is a photocurable resin. Irradiate and harden.

As shown in FIG. 2D, the present embodiment etches the substrate 10 in a next step (S4). The resin layer 20 is coated on other regions of the substrate 10 except for the region where the pattern 22 is formed, and the substrate 10 is exposed to the outside in the region where the pattern 22 is formed. Then, the resin layer 20 is used as an etching barrier, and the substrate 10 is etched by the etching operation in the region where the pattern 22 is transferred. Etching may be performed by either dry etching using a plasma gas or wet etching using a solution. For this reason, the microstructure pattern 12 similar to the pattern 22 of the resin layer 20 transferred from the small area stamp 30 is transferred to the board | substrate 10. FIG.

After the etching operation is completed, the resin layer 20 remaining on the substrate 10 is removed by dissolving the resin layer 20.

In this embodiment, the pattern transfer steps for transferring the pattern of the small area stamp 30 to the substrate 10 are repeated one or more times, so that the set area of the substrate 10 is in the pattern shape of the small area stamp 30. Is filled. That is, in this embodiment, the operation of transferring the pattern 31 of the small area stamp 30 is performed again as follows.

As shown in FIG. 2E, in the present embodiment, the resin layer 20 is spin-coated again on the substrate 10 on which the microstructure pattern 12 is primarily formed, thereby forming a region where the microstructure pattern 12 is formed. The resin layer 20 is coated on the entire surface of the substrate 10 (S5).

As shown in FIG. 2F, the present embodiment moves the small area stamp 30 on one side of the resin layer 20 so that the position where the pattern is to be transferred is changed. Then, in the same manner as the first pattern transfer step, the small area stamp 30 is imprinted onto the resin layer 20, thereby transferring the pattern 31 of the small area stamp 30 to the resin layer 20. (S2).

In this embodiment, another pattern 12 is transferred to the substrate 10 by curing the resin layer 20 having the pattern 22 formed thereon (S3) and etching the substrate 10 (S4). .

As shown in FIGS. 2I to 2L, the present embodiment additionally repeatedly transfers the pattern of the small-area stamp 30 to the substrate 10 by a set number of times, resulting in the setting of the substrate 10. The area is filled with the pattern shape of the small area stamp 30. The substrate 10 to which the plurality of pattern shapes have been transferred may be manufactured as a large area stamp as a result. For this reason, the present embodiment can be produced at low cost without using equipment that requires high cost to produce a large area stamp.

As described above, the present embodiment does not imprint the small-area stamp 30 several times on one resin layer 20, and performs one imprint operation, a curing operation, and an etching operation on one resin layer 20. There is a feature configured to repeat this.

That is, as a comparative example, as in the prior art, an imprint operation is performed with a small area stamp 30 on one resin layer 20, and the pattern shape is performed with the small area stamp 30 without performing a hardening operation and an etching operation. You can also connect to imprint. However, in this comparative example, since the resin layer 20 is pushed to the peripheral area in the process of imprinting with the small area stamp 30, the pattern shape is not maintained in the edge area of the pattern shape, and the adjacent pattern It does not connect with shape precisely.

On the other hand, in the present embodiment, one imprint operation, a curing operation, and an etching operation are performed on one resin layer 20, and the same is repeated. Therefore, in the present embodiment, the pattern shape is almost completely transferred from the small-area stamp 30, and the substrate 10 can be manufactured as a large-area stamp by repeating this, and the pattern shape can also be precisely maintained. .

In addition, in the method for manufacturing a large area stamp according to the present embodiment, as shown in FIGS. 3A through 3E, the plurality of small area stamps 30 and 40 are spaced apart by a predetermined interval, and so-called fine leg patterns may be used to form a fine leg ( 12) may be formed. 3A to 3E merely illustrate the process illustrated in FIGS. 2A to 2L and perform the same method of manufacturing the large area stamp shown in FIG. 1 except that a plurality of small area stamps are used. do. Then, the present embodiment can reduce the number of repetitions of the operation of transferring the pattern of the small area stamp 30 to the substrate 10 in comparison with the process illustrated in FIGS. 2A to 2L.

In the large area stamp manufacturing method according to the present embodiment, as shown in FIG. 4, the pattern may be transferred onto the substrate 10 using the stamp 50 having a plurality of patterns formed thereon. The stamp 50 having the plurality of patterns formed thereon transfers the pattern to the substrate 10 primarily as shown in FIG. 5A. Then, the stamp 50 having a plurality of patterns formed thereon moves by a distance set by a so-called stepping bridge, and reduces the number of repetitions of the work even if the microstructure patterns are sequentially formed as shown in FIGS. 5B to 5D. You can.

That is, the preferred embodiments of the present invention have been described, but the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

1 is a flowchart illustrating a method of manufacturing a large area stamp according to an embodiment of the present invention.

FIG. 2A is a schematic diagram illustrating a process of coating a resin layer on one surface of a substrate according to the manufacturing method of the large area stamp shown in FIG. 1.

FIG. 2B is a schematic diagram showing a process of preparing a small area stamp on one side of the resin layer shown in FIG. 2A.

FIG. 2C is a schematic diagram showing a process of transferring a pattern to a resin layer using the small area stamp shown in FIG. 2B.

FIG. 2D is a schematic diagram showing a process of transferring a pattern onto a substrate using the resin layer shown in FIG. 2C as an etching barrier.

FIG. 2E is a schematic diagram illustrating a process of recoating a resin layer on the substrate shown in FIG. 2D.

FIG. 2F is a schematic diagram showing a process of preparing a small area stamp on one side of the resin layer shown in FIG. 2E.

FIG. 2G is a schematic diagram showing a process of transferring a pattern to a resin layer using the small area stamp shown in FIG. 2F.

FIG. 2H is a schematic diagram showing a process of transferring a pattern onto a substrate using the resin layer shown in FIG. 2G as an etching barrier.

FIG. 2I is a schematic view showing a process of coating the resin layer on the substrate shown in FIG. 2H again.

FIG. 2J is a schematic diagram showing a process of preparing a small area stamp on one side of the resin layer shown in FIG. 2I.

FIG. 2K is a schematic diagram showing a process of transferring a pattern to a resin layer using the small area stamp shown in FIG. 2J.

FIG. 2L is a schematic diagram showing a process of transferring a pattern onto a substrate using the resin layer shown in FIG. 2K as an etching barrier.

3A is a schematic diagram illustrating a process of transferring a pattern to a resin layer using a plurality of small area stamps according to the manufacturing method of the large area stamp shown in FIG. 1.

3B is a schematic diagram illustrating a process of transferring a pattern onto a substrate using the resin layer shown in FIG. 3A as an etching barrier.

3C is a schematic diagram illustrating a process of recoating a resin layer on the substrate shown in FIG. 3B.

FIG. 3D is a schematic diagram showing a process of transferring a pattern with a plurality of stamps to the resin layer shown in FIG. 3C.

3E is a schematic diagram illustrating a process of transferring a pattern onto a substrate using the resin layer shown in FIG. 3D as an etching barrier.

4 is a perspective view illustrating a process of transferring a pattern onto a substrate using a stamp having a plurality of patterns formed therein according to the manufacturing method of the large area stamp shown in FIG. 1.

5A through 5D are plan views of substrates, respectively, illustrating a state in which a pattern is transferred to a substrate by using stamps having a plurality of patterns illustrated in FIG. 4.

6 is a schematic diagram showing a process of repeatedly transferring a pattern to a resin layer using a small area stamp according to the prior art.

<Description of Symbols for Main Parts of Drawings>

10: substrate 20: resin layer

    30, 40, 50: stamp

Claims (12)

A first step of coating a resin layer on the substrate; A second step of imprinting the resin layer with a patterned stamp; A third step of curing the resin layer; A fourth step of forming a fine structure pattern by etching the substrate using the resin layer as an etching barrier; And And re-coating the resin layer on the substrate on which the microstructure pattern is formed. By performing the second step to the fourth step sequentially by changing the position where the pattern is to be transferred on the substrate A method for producing a large area stamp using imprint lithography. The method of claim 1, The first step is a method of manufacturing a large area stamp using imprint lithography to form by spin-coating the resin layer on the substrate. The method of claim 1, The third step is a method of producing a large area stamp using imprint lithography using the resin layer as a thermosetting resin, and thermosetting the resin layer. The method of claim 1, The third step is a method of manufacturing a large area stamp using imprint lithography using the resin layer as a photocurable resin, and irradiated with UV (ultra violet) light to cure. The method of claim 1, The fourth step is a method of manufacturing a large area stamp using imprint lithography dry etching the substrate. The method of claim 1, The fourth step is a method of manufacturing a large area stamp using imprint lithography wet etching the substrate. The method of claim 1, Dissolving the resin layer between the fourth step and the fifth step; a method of manufacturing a large area stamp using imprint lithography. The method of claim 1, The fifth step is a method of manufacturing a large area stamp using imprint lithography coating the resin layer on the entire surface of the substrate including the region where the microstructure pattern is formed. The method of claim 1, A method of manufacturing a large area stamp using imprint lithography in which the set area of the substrate is filled with the pattern shape. delete The method of claim 1, The stamp is a method of manufacturing a large-area stamp using imprint lithography, the stamp is a pattern formed by any one of extreme ultraviolet (EUV) irradiation equipment or electron beam (E-Beam) irradiation equipment. The method of claim 1, The stamp is provided with a plurality, a method for producing a large area stamp using imprint lithography spaced apart from each other by a predetermined interval.

Images