CN103738911B - Based on the gallium arsenide surface micro-nano manufacturing method of friction induction selective etch - Google Patents
Based on the gallium arsenide surface micro-nano manufacturing method of friction induction selective etch Download PDFInfo
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- CN103738911B CN103738911B CN201310732778.7A CN201310732778A CN103738911B CN 103738911 B CN103738911 B CN 103738911B CN 201310732778 A CN201310732778 A CN 201310732778A CN 103738911 B CN103738911 B CN 103738911B
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Abstract
Based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, be mainly used in the processing of gallium arsenide surface micro nano structure.Its concrete operation method is: be arranged on by diamond probe on scanning probe microscopy or the micro-nano process equipment of Multi-contact, be fixed on sample stage, starting device by cleaned GaAs, applies to be not less than theoretical critical fire area load F to probe
cload F, and make probe according to setting track while scan scan at gallium arsenide surface; By H
2sO
4, H
2o
2, H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution and etches 5-120 minute.The method can process the bulge-structure of various shape at gallium arsenide surface, and it is simple to operate, cost is low, efficiency is high, flexibility is strong.
Description
Technical field
The present invention relates to a kind of gallium arsenide surface micro-nano manufacturing method based on friction induction selective etch.
Background technology
GaAs (GaAs) is one of of paramount importance compound semiconductor materials.GaAs (GaAs), because of its energy gap and high electron mobility, is the important materials manufacturing micro-nano device.The hetero quntum point that gallium arsenide surface is formed has the features such as photoelectric transformation efficiency is high, quantum limitation effect is strong, quantum Interference is obvious, shows powerful application prospect in fields such as new forms of energy, photodetection, high-performance laser and quantum calculations.Such as, the conversion efficiency of gallium arsenide substrate quantum dot solar cell can reach more than 50% in theory, far above the theoretical conversion efficiencies (30%) of silicon solar cell.Market analysis shows, and under the driving of the technology such as gallium arsenide quanta point luminescence, communication, the quantity of global GaAs high-tech hand-held device in 2014 can reach 1,700,000,000, brings the tax revenue of 3,700,000,000 dollars thus, and these data will continue to rise.But the growth of current gallium arsenide surface quantum dot is still unordered, its distributing homogeneity is difficult to control, and this becomes the huge obstacle of restriction quantum dot performance boost.By the processing of the micro nano structure of gallium arsenide surface, realize the high-quality located growth of gallium arsenide surface quantum dot, become the focal issue that domestic and international researcher pays close attention to.
The processing of the micro nano structure of current gallium arsenide surface, be limited to the restriction of the factor such as processing cost, working (machining) efficiency, its effect is all undesirable.According to different principles, the micro-nano manufacturing method being applied to gallium arsenide surface at present mainly contains:
Photoetching technique: general in gallium arsenide surface overlie polymer (lucite) as mask, then resist coating, by photochemical reaction and chemistry, physical etchings method, conducts to gallium arsenide surface by the figure in template.Along with improving constantly of resolution ratio and machining accuracy, the method cost is also more and more higher, its technical limitation is also highlighting further, as: be difficult to the defect of elimination mask plate, be difficult to improve the problem such as the surface smoothness of gallium arsenide wafer and mask plate and the depth of parallelism between the two, light source, photoresist costliness.In a word, along with the development of nanofabrication technique, photoetching technique develops into its " limits of application " gradually.
High energy beam micro-processing technology: utilize focused ion/electron beam can process the structure such as high-resolution grating, multistage step at gallium arsenide surface.But the method work flow comprises plated film equally, template covers, exposes, etches, goes the steps such as mould, working (machining) efficiency is lower.Because ion beam energy is comparatively large, except etching the material of target area, certain damage is also caused to matrix material, and its process equipment is expensive.
Anodic oxidation based on Scanning probe technique: make sample surfaces contact area generation selective oxidation by the tunnel current effect between scan-probe and sample and electrochemical reaction, forms the processing method of nano-scale oxide structure.In process, probe is as negative electrode, and sample, as anode, can make the several atomic layer of surface of test piece occur oxidation.The machining accuracy of the method is by the sharpness of probe, between probe and test specimen, the size of bias voltage, the factor such as ambient humidity and sweep speed affect, and processing conditions is quite harsh.
Summary of the invention
The object of this invention is to provide a kind of gallium arsenide surface micro-nano manufacturing method of friction induction selective etch, the method can process the bulge-structure of various shape at gallium arsenide surface, and it is simple to operate, cost is low, efficiency is high, flexibility is strong.
The present invention is for realizing its goal of the invention, and the technical scheme adopted is: a kind of gallium arsenide surface micro-nano manufacturing method based on friction induction selective etch, and its concrete operation method is:
A, diamond probe to be arranged on scanning probe microscopy or the micro-nano process equipment of Multi-contact, cleaned GaAs to be fixed on sample stage, starting device, apply to be not less than theoretical critical fire area load F to probe
cload F, and make probe according to setting track while scan scan at gallium arsenide surface; Described theoretical critical fire area load F
c, determine by the following method:
A1, by formula
calculate the equivalent elastic modulus E of diamond probe and GaAs, v in formula
1, v
2be respectively the Poisson's ratio of diamond probe and GaAs, E
1, E
2be respectively the elastic modelling quantity of diamond probe and GaAs;
A2, by formula
calculate the theoretical critical fire area load F corresponding to limit stress that surrender occurs GaAs
c, σ in formula
cfor the limit stress of surrender occurs GaAs, R is the equivalent radius of curvature of diamond probe;
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution and etches 5-120 minute.
Process of the present invention and mechanism are:
Probe is exerting pressure, in scanning process, and GaAs top layer is subject to higher than theoretical critical fire area load F
cpressure, the direct stress induction GaAs top layer recurring structure distortion of the shearing stress of its horizontal direction and vertical direction, and induce the generation of residual compressive stress, causes scanning area GaAs material crystal structure densify.At follow-up H
2sO
4and H
2o
2mixed solution etching in, densify gallium arsenide structure stops H
2sO
4and H
2o
2to GaAs material diffusion inside, thus delay H
2sO
4and H
2o
2to the chemical etching of scanning area.Non-scanning area then in etching process equably and H
2sO
4and H
2o
2react and be etched away, thus form corresponding bulge-structure in scanned region.
Compared with prior art, the invention has the beneficial effects as follows:
One, do not need to carry out the complicated specially treateds such as any glue spraying, plated film to gallium arsenide surface, do not need to use any masterplate, and the scanning of specified load is carried out by scanning probe microscopy or the micro-nano process equipment of Multi-contact, make gallium arsenide surface produce the dense cut of crystal, then by H
2sO
4and H
2o
2etch away non-scored area, corresponding micro nano structure can be processed at cut place.Its operating process is simple, and working (machining) efficiency is high.
Two, the diamond probe wear rate for processing is low, long service life, and the processing percentage of A-class goods is high, and cost is low.
Three, process can realize under normal temperature, atmospheric pressure environment, does not need the particular surroundings such as vacuum, constant temperature, constant humidity, is easy to processing.And the etching agent (H in corrosion process
2sO
4and H
2o
2) solution is easy to obtain.
Four, add loading size, scanning area, the track while scan in man-hour, the parameters such as etch period can set according to actual requirement, and to meet various process requirements, flexibility is strong.Such as, probe is carried out line sweep by the single straight path of setting, the nanoscale bulge-structure of wire can be obtained; Utilize probe to carry out Surface scan on selected region, planar bulge-structure can be made into.Utilize probe to carry out crisscross linear scanning on selected region, " well " font array structure can be made into; Utilize probe to carry out programmed scans on selected region, special letter structure can be made into; The height of bulge-structure is determined by the load applied and etch period, and width is determined by the size of probe tips.Its machining reproducibility is good, can make the bulge-structure of different in width and height according to actual needs.
The equivalent radius of curvature of above-mentioned diamond probe is 5 μm.
Below in conjunction with accompanying drawing and concrete embodiment, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is embodiment one method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 2 is embodiment two method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 3 is embodiment three method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 4 is embodiment four method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 5 is embodiment five method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 6 is embodiment six method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 7 is embodiment seven method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 8 is embodiment all directions method processes the wire bulge-structure obtained AFM shape appearance figure to gallium arsenide surface.
Fig. 9 is embodiment nine method carries out processing the linear array nanostructured obtained scanning electron microscope diagram at gallium arsenide surface.
Figure 10 is embodiment ten method carries out processing " well " font array nanostructured obtained scanning electron microscope diagram at gallium arsenide surface.
Figure 11 is embodiment 11 method carries out processing the facing bulge-structure obtained scanning electron microscope diagram at gallium arsenide surface.
Figure 12 is embodiment 12 method carries out processing the monogram " SWJTU " obtained scanning electron microscope diagram at gallium arsenide surface.
Wherein, in Fig. 1 to Fig. 8, the acquisition of pattern adopts scanning probe microscopy SPI3800N, and probe during scanning pattern is nitride tips, and topography scan area is 20 μm × 20 μm.The acquisition of Fig. 9 to Figure 12 pattern adopts SEM (ScanningElectronMicroscope, SEM, QUANTA200, FEI, Holland).In Fig. 9, the outline line in the lower left corner is by TI900TriboIndenter(HysitronInc., the U.S.) obtain.
Detailed description of the invention
In following embodiment, the elastic modulus E of diamond probe and GaAs
1, E
2be respectively 1141GPa and 85GPa, the Poisson's ratio v of diamond probe and GaAs
1, v
2being respectively 0.28 and 0.31, there is the limit stress σ of surrender in GaAs
cfor 4.8GPa.The equivalent radius of curvature R of the diamond probe adopted in each embodiment is 5 μm; The theoretical critical fire area load F in each embodiment is obtained according to following formula
cbe 2mN.
A1, by formula
calculate the equivalent elastic modulus E of diamond probe and GaAs, v in formula
1, v
2be respectively the Poisson's ratio of diamond probe and GaAs, E
1, E
2be respectively the elastic modelling quantity of diamond probe and GaAs;
A2, by formula
calculate the theoretical critical fire area load F corresponding to limit stress that surrender occurs GaAs
c, σ in formula
cfor the limit stress of surrender occurs GaAs, R is the equivalent radius of curvature of diamond probe;
Embodiment one
Based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, its concrete operation method is:
A, diamond probe is arranged on scanning probe microscopy, cleaned GaAs is fixed on sample stage, start scanning probe microscopy, apply to equal theoretical critical fire area load F to probe
cload F and 2mN, and make probe according to setting single straight path scan at gallium arsenide surface.
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution etching 30 minutes.
Fig. 1 is the AFM shape appearance figure that the example method processes the gallium arsenide surface nano thread structure obtained, and Fig. 1 shows that the height of the nano wire projection that the example method processes is 2nm.
Embodiment two
The operation of this example is substantially identical with embodiment one, and different is only change the load F that A walks into 10mN.
Fig. 2 is the AFM shape appearance figure that the example method processes the gallium arsenide surface nano thread structure obtained, and Fig. 2 shows that the height of the nano wire projection that the example method processes is 38nm.
Embodiment three
The operation of this example is substantially identical with embodiment one, and different is only change the load F that A walks into 20mN.
Fig. 3 is the AFM shape appearance figure that the example method processes the gallium arsenide surface nano thread structure obtained, and Fig. 3 shows that the height of the nano wire projection that the example method processes is 62nm.
Embodiment four
The operation of this example is substantially identical with embodiment one, and different is only change the load F that A walks into 30mN.
Fig. 4 is the AFM shape appearance figure that the example method processes the gallium arsenide surface nano thread structure obtained, and Fig. 4 shows that the height of the nano wire projection that the example method processes is 75nm.
According to the result of embodiment one to embodiment four, the known increase along with scanning load, wire bulge-structure height increases gradually.
Embodiment five
Based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, its concrete operation method is:
A, diamond probe is arranged on scanning probe microscopy, cleaned GaAs is fixed on sample stage, start scanning probe microscopy, apply to be greater than theoretical critical fire area load F to probe
c(2mN) the load F of 20mN, and probe is scanned at gallium arsenide surface according to the single straight line of setting.
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution etching 5 minutes.
Fig. 5 is the AFM shape appearance figure that the example method (etch period is 5 minutes) processes the gallium arsenide surface nano thread structure obtained, and Fig. 5 shows that the height of the nano wire projection that the example method processes is 16nm.
Embodiment six
The operation of this example is substantially identical with embodiment five, and different is only change the etch period that B walks into 15 minutes.
Fig. 6 is the AFM shape appearance figure of the gallium arsenide surface nano thread structure that the example method (etch period 15 minutes) is worked into, and Fig. 6 shows that the height of the nano wire projection that the example method processes is 38nm.
Embodiment seven
The operation of this example is substantially identical with embodiment five, and different is only change the etch period that B walks into 30 minutes.
Fig. 7 is the AFM shape appearance figure that the example method (etch period 30 minutes) processes the gallium arsenide surface nano thread structure obtained, and Fig. 7 shows that the height of the nano wire projection that the example method processes is 64nm.
Embodiment eight
The operation of this example is substantially identical with embodiment six, and different is only change the etch period that B walks into 60 minutes.
Fig. 8 is the AFM shape appearance figure that the example method (etch period 60 minutes) processes the gallium arsenide surface nano thread structure obtained, and Fig. 8 shows that the height of the nano wire projection that the example method processes is 82nm.
According to the result of embodiment five to embodiment eight, the known growth along with etch period, the height of wire bulge-structure increases gradually and tends towards stability.
Embodiment nine
Based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, its concrete operation method is:
A, diamond probe to be arranged on the micro-nano process equipment of Multi-contact, cleaned GaAs is fixed on sample stage, start the micro-nano process equipment of Multi-contact, apply to be greater than theoretical critical fire area load F to probe
c(2mN) the load F of 15mN, and the linear array track while scan that probe is formed according to many parallel lines of setting scans at gallium arsenide surface; In linear array track while scan, the spacing at adjacent two parallel lines centers is 9.375 μm.
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution etching 120 minutes.
Fig. 9 is the partial sweep electron microscope shape appearance figure of the gallium arsenide surface linear array structure that this example obtains.This figure shows its linear array height about 200nm, live width 2 μm.
Embodiment ten
The operation of this example is substantially identical with embodiment nine, and load F when different is only scanned is 15mN, and track while scan is " well " font array that crisscross straight line is formed, and the spacing that adjacent vertical (horizontal stroke) straight line sweeps center is 9.375 μm.
Figure 10 is the partial sweep electron microscope shape appearance figure of gallium arsenide surface " well " the font array structure that this example obtains.This figure shows the height about 200nm of its intersecting parallels array, live width 2 μm.
Embodiment 11
Based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, its concrete operation method is:
A, diamond probe to be arranged on the micro-nano process equipment of Multi-contact, cleaned GaAs is fixed on sample stage, start the micro-nano process equipment of Multi-contact, apply to be greater than theoretical critical fire area load F to probe
c(2mN) 10mN load F, and make probe according to four 200 μm × 200 μm facings of setting, the spacing of adjacent square is the track while scan of 200 μm, scans at gallium arsenide surface.
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in described mixed solution etching 60 minutes.
Figure 11 is the SEM shape appearance figure that the example method processes the planar bulge-structure of the gallium arsenide surface obtained.Show in this figure that the example method has processed the bulge-structure of four facings.
Embodiment 12
The operation of this example is originally identical with embodiment hendecyl, and different is only that track while scan changes letter " SWJTU " into.
Figure 12 is the SEM shape appearance figure that the example method processes the special letter structure of the gallium arsenide surface obtained.This figure shows that the example method has processed the bulge-structure of shape as " SWJTU ".
The micro-nano process equipment of Multi-contact that the present invention uses is existing equipment, if the patent No. is the large area friction induction micron order processing unit (plant) under the Multi-contact pattern disclosed in the Chinese patent of ZL201220331439.9.
Claims (2)
1., based on a gallium arsenide surface micro-nano manufacturing method for friction induction selective etch, its concrete operations are:
A, diamond probe to be arranged on scanning probe microscopy or the micro-nano process equipment of Multi-contact, cleaned GaAs to be fixed on sample stage, starting device, apply to be not less than theoretical critical fire area load F to probe
cload F, and make probe according to setting track while scan scan at gallium arsenide surface; Described theoretical critical fire area load F
c, determine by the following method:
A1, by formula
calculate the equivalent elastic modulus E of diamond probe and GaAs, v in formula
1, v
2be respectively the Poisson's ratio of diamond probe and GaAs, E
1, E
2be respectively the elastic modelling quantity of diamond probe and GaAs;
A2, by formula
calculate the theoretical critical fire area load F corresponding to limit stress that surrender occurs GaAs
c, σ in formula
cfor the limit stress of surrender occurs GaAs, R is the equivalent radius of curvature of diamond probe;
B, by H
2sO
4, H
2o
2and H
2o presses H
2sO
4: H
2o
2: H
2the volume ratio preparation mixed solution of O=1:0.5:100, then the GaAs after scanning is placed in mixed solution and etches 5-120 minute.
2. a kind of gallium arsenide surface micro-nano manufacturing method based on friction induction selective etch according to claim 1, is characterized in that: the equivalent radius of curvature of described diamond probe is 5 μm.
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| CN108892101A (en) * | 2018-07-09 | 2018-11-27 | 西南交通大学 | Silicon face nanoprocessing method based on friction induction TMAH selective etch |
| CN109399558A (en) * | 2018-11-13 | 2019-03-01 | 西南交通大学 | Gallium arsenide surface nanoprocessing method based on photochemistry assisted selective etching |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165811A (en) * | 1998-09-21 | 2000-12-26 | Electronics And Telecommunications Research Institute | Method of fabricating a high power semiconductor laser with self-aligned ion implantation |
| CN101549853A (en) * | 2009-05-13 | 2009-10-07 | 西南交通大学 | Processing method for constructing nano projection structure on surface of single crystal silicon based on friction induction |
| CN101973507A (en) * | 2010-07-09 | 2011-02-16 | 西南交通大学 | Friction induction-based single crystal quartz surface selective etching method |
| CN102503155A (en) * | 2011-12-01 | 2012-06-20 | 西南交通大学 | Glass surface nanofabrication method based on friction-induced selective etching |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080113520A1 (en) * | 2005-09-07 | 2008-05-15 | University Of Seoul Foundation Of Industry- Academic Cooperation | Method of Forming Organic Layer on Semiconductor Substrate |
-
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- 2013-12-27 CN CN201310732778.7A patent/CN103738911B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165811A (en) * | 1998-09-21 | 2000-12-26 | Electronics And Telecommunications Research Institute | Method of fabricating a high power semiconductor laser with self-aligned ion implantation |
| CN101549853A (en) * | 2009-05-13 | 2009-10-07 | 西南交通大学 | Processing method for constructing nano projection structure on surface of single crystal silicon based on friction induction |
| CN101973507A (en) * | 2010-07-09 | 2011-02-16 | 西南交通大学 | Friction induction-based single crystal quartz surface selective etching method |
| CN102503155A (en) * | 2011-12-01 | 2012-06-20 | 西南交通大学 | Glass surface nanofabrication method based on friction-induced selective etching |
Non-Patent Citations (2)
| Title |
|---|
| "Local Triboelectrification of an n-GaAs Surface Using the Tip of an Atomic Force Microscope";P. N. Brunkov^ et al.;《Semiconductors》;20130129;第47卷(第9期);第1170-1173页 * |
| "单晶硅表面摩擦诱导纳米凸结构的形成机理及应用研究";余丙军;《中国博士学位论文全文数据库》;20130215;第43-44、50-53、106-108页 * |
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