CN108892101A - Silicon face nanoprocessing method based on friction induction TMAH selective etch - Google Patents
Silicon face nanoprocessing method based on friction induction TMAH selective etch Download PDFInfo
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- CN108892101A CN108892101A CN201810742627.2A CN201810742627A CN108892101A CN 108892101 A CN108892101 A CN 108892101A CN 201810742627 A CN201810742627 A CN 201810742627A CN 108892101 A CN108892101 A CN 108892101A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
Abstract
The invention discloses a kind of silicon face nanoprocessing methods based on friction induction TMAH selective etch, include the following steps：S1, oxide layer removal processing is carried out to clean monocrystalline silicon surface, then successively its surface is cleaned, is dried；S2, surface scratch processing is carried out in monocrystalline silicon surface using Diamond tip by atomic force microscope or streaking device；S3, monocrystalline silicon surface is performed etching using tetramethyl ammonium hydroxide solution, monocrystalline silicon surface is cleaned after the completion of etching, obtain the 3-D nano, structure of monocrystalline silicon surface.Processing method provided by the invention is by the way of directly processing silicon face, and without complicated sample making course, method is simple, at low cost, and surface quality is high；Processed position can be replaced at any time in process, accomplish the accurate control to processing point；In addition, in process other than it need to be carried out under cleaning condition, it is lower to the requirement of other environmental conditions, sample to be processed can be changed quickly, it is high-efficient.
Description
Technical field
The invention belongs to single silicon fields, and in particular to one kind is based on friction induction selective etch in TMAH solution
Silicon face nanoprocessing method.
Background technique
With the fast development in the world, due to superiority of the intellectual material when executing complicated function, so that intelligent material
Material becomes more and more important.MEMS (MEMS) is widely used in the past ten years.And monocrystalline silicon due to
Its excellent mechanical performance and storage level abundant, are widely used in MEMS.In MEMS, monocrystalline
Silicon is not only as the substrate compatible with semiconductor element, but also as the structural material of MEMS device.Therefore, monocrystalline silicon surface is received
Rice structure processing is particularly important.
Currently, having had a large amount of micro-/ nano manufacturing technology, including photoetching technique, nanometer embossing, electricity in the world
Beamlet photoetching technique, probe anodizing technology etc..But by respective limitation, current manufacturing technology is not able to satisfy nanometer still
The scientific and technical all-round developing needs with infiltration；Meanwhile existing manufacturing technology is also faced with how to promote nanostructure processing point
The problem of resolution and reduction processing cost.Technology based on probe can be realized the positioning process and high-resolution of nanostructure size
Rate measurement, has some superiority in field of micro-Na manufacture.Wherein, based on the nanoprocessing method of friction induction selective etch,
The processing for directly carrying out micro-nano texture on the surface of the material including the use of the delineation that rubs of probe also includes that first friction is delineated, again
Carry out the processing of selective etch；This method has the advantages that the processing is simple, flexibility is high, at low cost, be monocrystalline silicon, quartz,
The manufacture of the micro nano structure on the surfaces such as glass, GaAs provides a kind of convenient method.
Currently, common etching agent is KOH solution, tetramethylammonium hydroxide respectively in Conventional selective etching
(TMAH), ethylene ethylene diamine pyrocatechol (EDP) etc..Wherein, EDP toxicity is high, and use occasion is less.KOH system etching agent is nothing
Poison, and there is relatively high etch rate and high anisotropy ratio, it has been found to can be used for friction induction selective etch；
But due in KOH etching process K+ ion easily cause pollution (change of surface physico-chemical property), cannot be simultaneous with MEMS technology
Hold；And KOH etching easily causes rough surface, can not be also heat-treated.In wet etchant system, what TMAH was etched
Structure and microelectronics system good compatibility, have been widely used for industrial production.
Although TMAH has some advantages in wet etching, whether has selective etch ability still not
Know.It is directed to friction induction method for selective etching at present, etching agent system is not complete.Seek a kind of high-quality, efficient etching agent
Be conducive to it further to expand and apply.The present invention intends the friction induction method for selective etching based on TMAH solution, carries out single
The processing of the micro nano structure on crystal silicon surface.It can be real by control processing load, TMAH solution etch period and etching temperature
The processing of existing micro nano structure, has simple, quick feature.
Summary of the invention
Present invention aim to address the above problems, provide a kind of based on friction induction selective etch in TMAH solution
Silicon face nanoprocessing method, the present invention are suitable for the processing of the micron-nano grade three-dimensional structure of monocrystalline silicon surface.
In order to solve the above technical problems, the technical scheme is that：One kind being based on friction induction TMAH selective etch
Silicon face nanoprocessing method, include the following steps：
S1, oxide layer removal processing is carried out to clean monocrystalline silicon surface, then successively its surface is cleaned, is dried；
S2, added using Diamond tip in monocrystalline silicon surface progress surface scratch by atomic force microscope or streaking device
Work；
S3, monocrystalline silicon surface is performed etching using TMAH solution, monocrystalline silicon surface is cleaned after the completion of etching, is obtained
Obtain the 3-D nano, structure of monocrystalline silicon surface.
In above-mentioned technical proposal, monocrystalline silicon is preferably monocrystalline silicon (100) and monocrystalline silicon (110).Through inventor's many experiments
It was found that present invention is particularly suitable for monocrystalline silicon (100) and (110) etc., and there is the nanometer on the surface of obvious selective etch characteristic to add
Work.
In above-mentioned technical proposal, in the step S1, monocrystalline silicon piece is during storage, because there are oxygen, meetings in air
One layer of fine and close oxide layer is formed in monocrystalline silicon surface, oxide layer has an impact selective etch in order to prevent, thus is carving
Oxide layer removal processing is carried out to monocrystalline silicon before erosion.Present invention preferably employs the hydrofluoric acid solutions of mass concentration 5% to etch monocrystalline
Silicon face, etch period 5min, then successively monocrystalline silicon surface is cleaned using ethyl alcohol, deionized water, scavenging period is
5min.It should be noted that being not limited to above-mentioned preferred side to monocrystalline silicon pretreatment mode (oxide layer removal and surface clean)
Formula is the natural oxidizing layer for completely removing its surface to the purpose that monocrystalline silicon surface performs etching using hydrofluoric acid solution, and is adopted
With the purpose that ethyl alcohol, deionized water clean monocrystalline silicon surface be removal be attached to monocrystalline silicon surface remaining hydrofluoric acid it is molten
Liquid and other foreign matters.Thus other in all this fields under inventive concept guidance, used with reaching above-mentioned purpose are normal
Rule oxide layer removal processing and cleaning way belong in the scope of the present invention.
Diamond tip is used in the present invention, and due to the chemical inertness of Diamond tip, Diamond tip and sample are sent out
Raw purely mechanic effect, to obtain mechanical scratch.Consider to reduce the abrasion of needle point and guarantees processing quality, the point of Diamond tip
Holding radius of curvature is preferably 20nm~50 μm, and further preferably 20nm-1 μm.
In above-mentioned technical proposal, in the step S3, TMAH solution excessive concentration influences whether etch rate and silicon face
Roughness.When TMAH concentration is 25%, surface roughness is lower, and has good etching effect.With etch period
Increase, processed structure can occur to collapse (selective etch event resolves).Therefore in terms of the effect that processed structure is presented, preferably
TMAH solution mass concentration is 25%, and etching temperature is 25 DEG C, and etch period is 30s~8min；Within the scope of the etch period,
The nanostructure height processed increases with etch period.Further, preferably etch period is 8min.Inventor's experiment
It was found that can get maximum etching height at this time, the shape and height of resulting nanostructure are most when etch period is 8min
Uniformly.Further, after the completion of etching, monocrystalline silicon surface is cleaned to remove the TMAH solution for remaining in surface, is kept away
Exempt from the increase of etch period.Present invention preferably employs ethyl alcohol, deionized waters to be cleaned by ultrasonic to monocrystalline silicon surface, scavenging period
It is 5min.It should be noted that being equally not limited to above-mentioned preferred embodiment to monocrystalline silicon surface cleaning, cleaning purpose is removal
It is attached to the remaining TMAH solution and other foreign matters of monocrystalline silicon surface, thus it is all under inventive concept guidance, on reaching
State purpose and other regular oxidation layers removal processing and cleaning way belong to the scope of the present invention in this field for using
It is interior.
The principle of the present invention is described in detail below, further to show advantages of the present invention：The present invention is logical first
It crosses in atomic force microscope or streaking device, delineation processing is carried out to monocrystalline silicon surface using Diamond tip, so that monocrystalline
Lattice deformability occurs for silicon face, generates oxide layer and deformation layer (containing amorphous layer, distortion of lattice layer), the oxide layer to induce
And deformation layer can be used as the exposure mask of subsequent etching；Then sample is placed in TAMH solution and carries out selective etch, at this point, by
There is different etch rates (peripheral region is faster than scored area), machining area week from its peripheral region in scratch machining area
The undressed silicon face enclosed will be etched quickly, and machining area highlights.
The beneficial effects of the invention are as follows：
1, processing method provided by the invention is by the way of directly processing silicon chip surface, without complicated sample preparation
Process, method is simple, at low cost；
2, this method can replace processed position at any time in process, accomplish the accurate control for processing point, table
Face quality is high；
3, lower to the requirement of other environmental conditions in this method process other than it need to be carried out under cleaning condition, it can
Quick-replaceable sample to be processed, it is high-efficient.
Detailed description of the invention
Fig. 1 is that the step process of the silicon face nanoprocessing method the present invention is based on friction induction TMAH selective etch is shown
It is intended to；
Fig. 2 is one monocrystalline silicon of embodiment (100) different etching temperature and etch period under the conditions of institute shape in TMAH solution
At nanostructure atomic force microscope pattern comparison diagram；
Fig. 3 is two monocrystalline silicon of embodiment (100) in TMAH solution under identical etching temperature and different etching time conditions
It is formed by nanostructure height comparison diagram；
Fig. 4 is that example IV monocrystalline silicon (110) is formed by nano junction under different etching time conditions in TMAH solution
Structure atomic force microscope pattern comparison diagram；
Fig. 5 is the atomic force microscope shape appearance figure for the nanostructure that embodiment five is processed on monocrystalline silicon (100) surface.
Specific embodiment
The present invention is described further in the following with reference to the drawings and specific embodiments：
As shown in Figure 1, a kind of silicon face nanoprocessing method based on friction induction TMAH selective etch of the invention,
Include the following steps：
S1, the HF solution etches 5min that monocrystalline silicon is put into mass concentration 5%, to completely remove the autoxidation on its surface
Layer, then successively monocrystalline silicon surface is cleaned using ethyl alcohol, deionized water, scavenging period is 5min, then place is dried
Reason；
S2, cleaning, dry monocrystalline silicon are put into the sample cavity of atomic force microscope or streaking device, are selected appropriate
Scratch processes load, carries out surface scratch processing, the tip curvature of Diamond tip in monocrystalline silicon surface using Diamond tip
Radius is 20nm~50 μm；
After the completion of delineation, monocrystalline silicon sheet surface will affect etching effect there are a large amount of abrasive dusts in etching process.Thus exist
In following embodiments, monocrystalline silicon piece is sequentially placed into ethyl alcohol after completing delineation, is cleaned by ultrasonic 5min respectively in deionized water, used
Deionized water rinses and dries, and the monocrystalline silicon piece after cleaning, being dried is put into atomic force microscope sample cavity, and
Machining area is scanned, the primary morphology of scratch is obtained；
S3, mass concentration is used to perform etching for 25% TMAH solution to monocrystalline silicon surface, etching temperature is 25 DEG C, is carved
The erosion time is 30s~8min, obtains the 3-D nano, structure of monocrystalline silicon surface.
In following embodiments, after the completion of etching, by treated, monocrystalline silicon is rinsed with deionized water rapidly, residual to remove
The TMAH solution for staying in surface avoids the increase of etch period.It is sequentially placed into ethyl alcohol again, is cleaned by ultrasonic in deionized water respectively
5min, then rinsed and dried with deionized water, the monocrystalline silicon after cleaning, being dried is put into atomic force microscope sample
It is intracavitary, and machining area is scanned.
Below by way of specific embodiment, the invention will be further described.
Embodiment one
The silicon face nanoprocessing method based on friction induction TMAH selective etch of the present embodiment, including following step
Suddenly：
S1, the HF solution etches 5min that monocrystalline silicon (100) is put into mass concentration 5%, with completely remove its surface from
Right oxide layer, then successively monocrystalline silicon (100) surface is cleaned by ultrasonic using ethyl alcohol, deionized water, scavenging period is
5min, then be dried；
S2, cleaning, dry monocrystalline silicon (100) are put into atomic force microscope sample cavity, are existed using Diamond tip
Monocrystalline silicon (100) surface carries out needle point delineation processing, and the tip curvature radius of Diamond tip is 20nm, and processing load is 10 μ
N；
Monocrystalline silicon (110) is sequentially placed into ethyl alcohol, is cleaned by ultrasonic 5min respectively in deionized water, is rinsed simultaneously with deionized water
It is dry, the monocrystalline silicon (110) after cleaning, being dried is put into atomic force microscope sample cavity, and to machining area
It is scanned, obtains the primary morphology of scratch；
S3, the monocrystalline silicon (100) Jing Guo above-mentioned processing is divided into several groups, it is molten places into the TMAH that mass concentration is 25%
Surface etch processing is carried out in liquid, etching temperature is respectively 25 DEG C, 35 DEG C, 50 DEG C, 70 DEG C, etch period be respectively 0s, 30s,
1min, 5min, 15min, to obtain the 3-D nano, structure on monocrystalline silicon (100) surface.
After the completion of etching, monocrystalline silicon (100) is rinsed with deionized water rapidly, then is sequentially placed into ethyl alcohol, in deionized water
It is cleaned by ultrasonic 5min respectively, is rinsed and dried with deionized water, the monocrystalline silicon (100) after cleaning, being dried is put into
In atomic force microscope sample cavity, and machining area is scanned.
As shown in Fig. 2, being the Diamond tip manufactured in the present embodiment using radius of curvature 20nm, load is 10 μ N, is carved
Losing temperature is respectively 25 DEG C, 35 DEG C, 50 DEG C, 70 DEG C, the formed nanostructure after etching 0s, 30s, 1min, 5min, 15min
Atomic force microscope pattern comparison diagram.
Embodiment two
The silicon face nanoprocessing method based on friction induction TMAH selective etch of the present embodiment, including following step
Suddenly：
S1, the HF solution etches 5min that monocrystalline silicon (100) is put into mass concentration 5%, with completely remove its surface from
Right oxide layer, then successively monocrystalline silicon (100) surface is cleaned using ethyl alcohol, deionized water, scavenging period is 5min, then
It is dried；
S2, cleaning, dry monocrystalline silicon (100) are put into atomic force microscope sample cavity, are existed using Diamond tip
Monocrystalline silicon (100) surface carries out needle point delineation processing, and the tip curvature radius of Diamond tip is 20nm, and processing load is 10 μ
N；
After the completion of delineation, monocrystalline silicon (110) is sequentially placed into ethyl alcohol, is cleaned by ultrasonic 5min respectively in deionized water, spends
Ionized water rinses and dries, and the monocrystalline silicon (110) after cleaning, being dried is put into atomic force microscope sample cavity,
And machining area is scanned；
S3, the monocrystalline silicon (100) Jing Guo above-mentioned processing is divided into several groups, it is molten places into the TMAH that mass concentration is 25%
In liquid carry out surface etch processing, etching temperature be 25 DEG C, etch period be respectively 0s, 30s, 1min, 3min, 5min, 8min,
10min, 12min, 15min, to obtain the 3-D nano, structure on monocrystalline silicon (100) surface.
After the completion of etching, monocrystalline silicon (100) is rinsed with deionized water rapidly, then is sequentially placed into ethyl alcohol, in deionized water
It is cleaned by ultrasonic 5min respectively, is rinsed and dried with deionized water, the monocrystalline silicon (100) after cleaning, being dried is put into
In atomic force microscope sample cavity, and machining area is scanned.
As shown in figure 3, being the Diamond tip manufactured in the present embodiment using radius of curvature 20nm, load is 10 μ N, is carved
Losing temperature is 25 DEG C, the formed nano junction after etching 0s, 30s, 1min, 3min, 5min, 8min, 10min, 12min, 15min
The degree of contrast figure of structure.
Embodiment three
The silicon face nanoprocessing method based on friction induction TMAH selective etch of the present embodiment, including following step
Suddenly：
S1, using monocrystalline silicon (110), monocrystalline silicon (110) is put into the HF solution etches 5min of mass concentration 5%, with complete
The natural oxidizing layer on its surface is removed entirely, then successively monocrystalline silicon (110) surface is cleaned using ethyl alcohol, deionized water, clearly
Washing the time is 5min, then is dried；
S2, cleaning, dry monocrystalline silicon (110) are put into atomic force microscope sample cavity, are existed using Diamond tip
Monocrystalline silicon (110) surface carries out friction induction nanoprocessing, and the tip curvature radius of Diamond tip is 20nm, and processing load is
10μN；
After the completion of delineation, monocrystalline silicon (110) is sequentially placed into ethyl alcohol, is cleaned by ultrasonic 5min respectively in deionized water, spends
Ionized water rinses and dries, and the monocrystalline silicon (110) after cleaning, being dried is put into atomic force microscope sample cavity,
And machining area is scanned；
S3, the monocrystalline silicon (110) Jing Guo above-mentioned processing is divided into several groups, it is molten places into the TMAH that mass concentration is 25%
Surface etch processing is carried out in liquid, etching temperature is 25 DEG C, and etch period is respectively 0min, 1min, to obtain monocrystalline silicon
(110) 3-D nano, structure on surface.
After the completion of etching, monocrystalline silicon (110) is rinsed with deionized water rapidly, then is sequentially placed into ethyl alcohol, in deionized water
It is cleaned by ultrasonic 5min respectively, is rinsed and dried with deionized water, the monocrystalline silicon (110) after cleaning, being dried is put into
In atomic force microscope sample cavity, and machining area is scanned.
As shown in figure 4, being the Diamond tip manufactured in the present embodiment using radius of curvature 20nm, load is 10 μ N,
In the TMAH solution that concentration is 25%, the atomic force microscope pattern comparison of the formed nanostructure of 0min, 1min is etched respectively
Figure.
Example IV
The silicon face nanoprocessing method based on friction induction TMAH selective etch of the present embodiment, including following step
Suddenly：
S1, the HF solution etches 5min that monocrystalline silicon (100) is put into mass concentration 5%, with completely remove its surface from
Right oxide layer, then successively monocrystalline silicon (100) surface is cleaned using ethyl alcohol, deionized water, scavenging period is 5min, then
It is dried；
S2, cleaning, dry monocrystalline silicon (100) are put into atomic force microscope sample cavity, using Diamond tip, are led to
Process control is crossed, needle point is made to carry out mechanical scratching processing on monocrystalline silicon (100) surface according to the path of design, Diamond tip
Tip curvature radius is 20nm, and processing load is 30 μ N；
After the completion of delineation, monocrystalline silicon (100) is sequentially placed into ethyl alcohol, is cleaned by ultrasonic 5min respectively in deionized water, is spent
Ionized water rinses and dries, and the monocrystalline silicon (110) after cleaning, being dried is put into atomic force microscope sample cavity,
And machining area is scanned；
S3, the monocrystalline silicon (100) Jing Guo above-mentioned processing is divided into several groups, it is molten places into the TMAH that mass concentration is 25%
Surface etch processing is carried out in liquid, etching temperature is 25 DEG C, etch period 5min, to obtain monocrystalline silicon (100) surface
3-D nano, structure.
After the completion of etching, monocrystalline silicon (100) is rinsed with deionized water rapidly, then is sequentially placed into ethyl alcohol, in deionized water
It is cleaned by ultrasonic 5min respectively, is rinsed and dried with deionized water, the monocrystalline silicon (100) after cleaning, being dried is put into
In atomic force microscope sample cavity, and machining area is scanned.
As shown in figure 5, the atomic force microscope shape appearance figure of the nanostructure for the present embodiment processing.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field
Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention
The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.
Claims (7)
1. a kind of silicon face nanoprocessing method based on friction induction TMAH selective etch, it is characterised in that：Including following
Step：
S1, oxide layer removal processing is carried out to clean monocrystalline silicon surface, then successively its surface is cleaned, is dried；
S2, surface scratch processing is carried out in monocrystalline silicon surface using Diamond tip by atomic force microscope or streaking device；
S3, monocrystalline silicon surface is performed etching using TMAH solution, monocrystalline silicon surface is cleaned after the completion of etching, obtained single
The 3-D nano, structure on crystal silicon surface.
2. the silicon face nanoprocessing method according to claim 1 based on friction induction TMAH selective etch, special
Sign is：The monocrystalline silicon is monocrystalline silicon (100) or monocrystalline silicon (110).
3. the silicon face nanoprocessing method according to claim 1 or 2 based on friction induction TMAH selective etch,
It is characterized in that：In the step S2, the tip curvature radius of Diamond tip is 20nm~50 μm.
4. the silicon face nanoprocessing method according to claim 1 or 2 based on friction induction TMAH selective etch,
It is characterized in that：In the step S2, the tip curvature radius of Diamond tip is 20nm~1 μm.
5. the silicon face nanoprocessing method according to claim 1 based on friction induction TMAH selective etch, special
Sign is：In the step S3, the TMAH solution mass concentration be 25%, etching temperature be 25 DEG C, etch period be 30s~
8min。
6. the silicon face nanoprocessing method according to claim 1 based on friction induction TMAH selective etch, special
Sign is：In the step S1, using the HF solution etches monocrystalline silicon surface 5min of mass concentration 5%, with remove surface from
Right oxide layer, then monocrystalline silicon surface after the processing of HF solution is cleaned using ethyl alcohol, deionized water.
7. the silicon face nanoprocessing method according to claim 1 based on friction induction TMAH selective etch, special
Sign is：In the step S3, successively monocrystalline silicon surface is cleaned by ultrasonic using ethyl alcohol, deionized water, so that its surface
Remaining TMAH solution solution and other foreign matters clean up completely.
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| CN110635000A (en) * | 2019-09-26 | 2019-12-31 | 厦门乾照光电股份有限公司 | LED chip and manufacturing method thereof |
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