CN103700729A - 一种柔性太阳能电池的制作方法 - Google Patents
一种柔性太阳能电池的制作方法 Download PDFInfo
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- CN103700729A CN103700729A CN201310744884.7A CN201310744884A CN103700729A CN 103700729 A CN103700729 A CN 103700729A CN 201310744884 A CN201310744884 A CN 201310744884A CN 103700729 A CN103700729 A CN 103700729A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004020 conductor Substances 0.000 claims abstract description 139
- 239000011810 insulating material Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012774 insulation material Substances 0.000 claims description 35
- 238000002360 preparation method Methods 0.000 claims description 18
- 238000007731 hot pressing Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000446 fuel Substances 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 Copper Indium Gallium Selenide compound Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310744884.7A CN103700729B (zh) | 2013-12-30 | 2013-12-30 | 一种柔性太阳能电池的制作方法 |
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CN201310744884.7A CN103700729B (zh) | 2013-12-30 | 2013-12-30 | 一种柔性太阳能电池的制作方法 |
Publications (2)
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CN103700729A true CN103700729A (zh) | 2014-04-02 |
CN103700729B CN103700729B (zh) | 2017-03-01 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377273A (zh) * | 2014-11-14 | 2015-02-25 | 厦门惟华光能有限公司 | 钙钛矿薄膜太阳能电池组件的卷对卷生产设备和生产方法 |
CN104979477A (zh) * | 2015-05-18 | 2015-10-14 | 常州天合光能有限公司 | Z型串联钙钛矿太阳电池组件及其制备方法 |
CN107527964A (zh) * | 2016-06-22 | 2017-12-29 | 北京铂阳顶荣光伏科技有限公司 | 具有柔性线互连的光伏模块 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559479B1 (en) * | 1998-11-25 | 2003-05-06 | Fraunhofer-Gesellscahft Zur Forderung Der Angewandten Forschung E.V. | Thin-film solar array system and method for producing the same |
CN202797009U (zh) * | 2012-06-27 | 2013-03-13 | 长春光景科技有限公司 | 一种柔性玻璃作衬底的太阳能电池板 |
CN203225264U (zh) * | 2012-11-19 | 2013-10-02 | 深圳市创益科技发展有限公司 | 一种折叠式大幅面柔性太阳能电池组件 |
CN103415990A (zh) * | 2010-06-08 | 2013-11-27 | 美亚国际科技公司 | 太阳能电池互连、模块、面板及方法 |
-
2013
- 2013-12-30 CN CN201310744884.7A patent/CN103700729B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559479B1 (en) * | 1998-11-25 | 2003-05-06 | Fraunhofer-Gesellscahft Zur Forderung Der Angewandten Forschung E.V. | Thin-film solar array system and method for producing the same |
CN103415990A (zh) * | 2010-06-08 | 2013-11-27 | 美亚国际科技公司 | 太阳能电池互连、模块、面板及方法 |
CN202797009U (zh) * | 2012-06-27 | 2013-03-13 | 长春光景科技有限公司 | 一种柔性玻璃作衬底的太阳能电池板 |
CN203225264U (zh) * | 2012-11-19 | 2013-10-02 | 深圳市创益科技发展有限公司 | 一种折叠式大幅面柔性太阳能电池组件 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377273A (zh) * | 2014-11-14 | 2015-02-25 | 厦门惟华光能有限公司 | 钙钛矿薄膜太阳能电池组件的卷对卷生产设备和生产方法 |
CN104979477A (zh) * | 2015-05-18 | 2015-10-14 | 常州天合光能有限公司 | Z型串联钙钛矿太阳电池组件及其制备方法 |
CN107527964A (zh) * | 2016-06-22 | 2017-12-29 | 北京铂阳顶荣光伏科技有限公司 | 具有柔性线互连的光伏模块 |
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CN103700729B (zh) | 2017-03-01 |
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Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
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Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. |
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Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. |
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Effective date of registration: 20200609 Address after: 518112 Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen yongshenglong Technology Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210220 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen, Guangdong 518112 Patentee before: Shenzhen yongshenglong Technology Co.,Ltd. |