CN103699143B - The system and method that polishing fluid concentration is controlled to stablize - Google Patents
The system and method that polishing fluid concentration is controlled to stablize Download PDFInfo
- Publication number
- CN103699143B CN103699143B CN201210375488.7A CN201210375488A CN103699143B CN 103699143 B CN103699143 B CN 103699143B CN 201210375488 A CN201210375488 A CN 201210375488A CN 103699143 B CN103699143 B CN 103699143B
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- concentration
- accumulator tank
- liquid
- acid group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 194
- 239000012530 fluid Substances 0.000 title claims abstract description 168
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 82
- 239000002253 acid Substances 0.000 claims abstract description 79
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 40
- 238000001514 detection method Methods 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 238000009713 electroplating Methods 0.000 claims abstract description 19
- 230000000052 comparative effect Effects 0.000 claims abstract description 6
- 239000013589 supplement Substances 0.000 claims abstract description 6
- 230000000704 physical effect Effects 0.000 claims description 6
- 239000002699 waste material Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 46
- 229910001431 copper ion Inorganic materials 0.000 description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007521 mechanical polishing technique Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention discloses a kind of system and method that polishing fluid concentration is controlled to stablize, which includes：Accumulator tank,Controller,Concentration detection apparatus,Liquid circulation control device,Electroplanting device,Liquid emission control system and liquid feeding controller,Concentration detection apparatus detects the concentration of metal ions of polishing fluid and acid group concentration in accumulator tank and is sent to controller,Liquid circulation control device conveying polishing fluid is delivered to electroplanting device and carries out electroplating reaction and the liquid in electroplanting device is transmitted back to accumulator tank,Electroplanting device is used for electroplating reaction,Liquid emission control system discharges the polishing fluid in accumulator tank,Liquid feeding controller supplements polishing fluid stoste to accumulator tank,Controller is by the concentration of metal ions of reception and acid group concentration respectively compared with the metal ion target concentration value of setting and acid group target concentration value,Control instruction is sent according to comparative result to adjust in accumulator tank the concentration of metal ions of polishing fluid and acid group concentration to target concentration value.
Description
Technical field
The present invention relates to non-stress polishing technical field more particularly to a kind of system that polishing fluid concentration is controlled to stablize and sides
Method.
Background technology
In ic manufacturing process, chemically mechanical polishing（CMP）Technology is interconnected in monocrystalline substrate and multiple layer metal
It is widely used in terms of the interlayer global planarizartion of structure.Chemically mechanical polishing can be polished and planarized in medium material
The metal layer formed on the non-sunk area of material.Although chemically mechanical polishing only can polish metal layer and not have to dielectric layer
It influences, however, due to its strong mechanicals efforts, chemically-mechanicapolish polishes the influence that can bring some harmful to integrated circuit structure,
Especially with the fast development of great scale integrated circuit and super large-scale integration, copper and low K or ultra low k dielectric
Material is used in great scale integrated circuit and super large-scale integration, due to copper and low K or ultra low k dielectric material
The mechanical performance of material has very big difference, and the strong mechanicals efforts in chemically mechanical polishing may be situated between to low K or ultralow K electricity
Material causes permanent damage.
In order to solve the disadvantage that in chemical Mechanical Polishing Technique, people are same constantly improve chemical Mechanical Polishing Technique
When, new planarization is constantly also being explored and is studying, wherein, non-stress polishing technology is gradually applied in great scale collection
Into in the manufacture of circuit and super large-scale integration.Non-stress polishing technology can overcome traditional chemical Mechanical Polishing Technique
In the defects of ultra tiny characteristic size IC manufacturing.Non-stress polishing technology is based on electrochemical polish principle, Neng Gouwu
Mechanical stress planarizes metal interconnection structure.Non-stress polishing is needed using the polishing fluid for being capable of conduction, by electricity
After chemical reaction, concentration of metal ions and acid group concentration can change in polishing fluid, concentration of metal ions and acid group concentration
It is one of important parameter in non-stress polishing technology, the variation meeting of concentration of metal ions and acid group concentration in polishing fluid
Polishing uniformity is influenced, stability of concentration also directly affects the repeatability of glossing.Therefore, in non-stress polishing process
In, the concentration of metal ions in polishing fluid and acid group concentration stabilization is maintained to play an important roll to improving glossing effect.
The content of the invention
The object of the present invention is to provide a kind of system that polishing fluid concentration is controlled to stablize, which can make golden in polishing fluid
Belong to ion concentration and acid group concentration maintains to stablize, so as to improve the repeatability of polishing uniformity, glossing and reduce polishing
Cost.
To achieve the above object, a kind of system that polishing fluid concentration is controlled to stablize provided by the invention, including：Accumulator tank,
Controller, concentration detection apparatus, liquid circulation control device, electroplanting device, liquid emission control system and liquid supply control
Device, wherein, accumulator tank storage polishing fluid, concentration detection apparatus detects the concentration of metal ions and acid group of polishing fluid in accumulator tank
The concentration of metal ions detected and acid group concentration are simultaneously sent to controller by concentration, and liquid circulation control device can will store
Polishing fluid in slot is delivered to electroplanting device and carries out electroplating reaction and the liquid in electroplanting device is transmitted back to accumulator tank, plating dress
It puts for electroplating reaction and recycles the metal ion in polishing fluid, liquid emission control system can be by the polishing in accumulator tank
Liquid is discharged, and liquid feeding controller can supplement polishing fluid stoste to accumulator tank, and controller receives concentration detection apparatus and sends
Concentration of metal ions and acid group concentration and by the concentration of metal ions of reception and acid group the concentration metal ion with setting respectively
Target concentration value and acid group target concentration value compare, according to comparative result respectively to liquid circulation control device, electroplanting device, liquid
It is dense to adjust the metal ion of polishing fluid in accumulator tank that body emission control system and liquid feeding controller send control instruction
It spends and acid group concentration to target concentration value.
It is a further object of the present invention to provide a kind of method that polishing fluid concentration is controlled to stablize, this method includes：
Detect the concentration of metal ions of polishing fluid and acid group concentration in accumulator tank；
By the concentration of metal ions detected and acid group concentration the metal ion target concentration value and acid group with setting respectively
Target concentration value compares, and adjusts in accumulator tank the concentration of metal ions of polishing fluid and acid group concentration respectively according to comparative result to mesh
Mark concentration value.
In conclusion the present invention is a kind of to control the system and method that polishing fluid concentration is stablized by by certain body in accumulator tank
Long-pending polishing fluid is delivered to electroplanting device and carries out electroplating reaction, so as to which the metal ion in polishing fluid be recycled, to reduce polishing
In liquid the concentration of metal ion and the polishing fluid of certain volume in accumulator tank is discharged and supplements polishing fluid stoste, to improve
The concentration of acid group in polishing fluid, and then the concentration of metal ions of polishing fluid and acid group concentration in accumulator tank is made to maintain to stablize, it improves
The repeatability of polishing uniformity and glossing, simultaneously as the reusable edible of polishing fluid, therefore, greatly reduces
The cost of non-stress polishing.
Description of the drawings
Fig. 1 is a kind of structure diagram for the system that polishing fluid concentration is controlled to stablize of the present invention.
Fig. 2 is a kind of flow chart for the method that polishing fluid concentration is controlled to stablize of the present invention.
Fig. 3 is a kind of another flow chart for the method that polishing fluid concentration is controlled to stablize of the present invention.
Fig. 4 is that the target concentration value of copper ion and the difference of detectable concentration value are filled with being delivered to plating in polishing fluid of the present invention
Put the correspondence figure between the volume ratio for the polishing fluid for carrying out electroplating reaction.
Fig. 5 is the difference of the target concentration value of acid group and detectable concentration value in polishing fluid of the present invention with being discharged from accumulator tank
Or the correspondence figure between the volume ratio for the polishing fluid stoste supplemented into accumulator tank.
Specific embodiment
For technology contents, construction feature, institute's reached purpose and effect that the present invention will be described in detail, below in conjunction with embodiment
And schema is coordinated to be described in detail.
In the present invention, will be by taking the polishing of unstressed copper as an example, introduce a kind of control polishing fluid concentration stabilization of the present invention is
System and method.It please refers to Fig.1, Fig. 4 and Fig. 5, a kind of system that polishing fluid concentration is controlled to stablize of the present invention include：Accumulator tank 10,
Controller 20, liquid level detection device 30, copper ion concentration and acid group concentration detection apparatus 40, liquid circulation control device 50, electricity
Plating appts 60, stoste slot 71, cache slot 72, liquid feeding controller 80 and liquid emission control system 90.Wherein, liquid level is examined
Survey device 30, copper ion concentration and acid group concentration detection apparatus 40, liquid circulation control device 50, electroplanting device 60, liquid confession
Control device 80 and liquid emission control system 90 is answered to be connected respectively with controller 20.
The polishing fluid of debita spissitudo is stored in accumulator tank 10 for carrying out unstressed copper polishing reaction, is thrown in unstressed copper
In photoreduction process, the polishing fluid sprayed to copper surface can be fallen after rise to the accumulator tank 10, so, the polishing fluid in accumulator tank 10 is using
After a period of time, the concentration of polishing fluid can change, wherein, the concentration of copper ion can be gradually increasing in polishing fluid, and acid group
Concentration can be gradually reduced.In polishing fluid copper ion concentration and acid group concentration change can be to polishing uniformity and glossing can
Repeatability causes harmful effect.Therefore, in order to improve the repeatability of polishing uniformity and glossing, polished in unstressed copper
In the process, it is necessary to detect in real time and control in accumulator tank 10 copper ion concentration of polishing fluid and acid group concentration to target concentration value,
The copper ion concentration and acid group concentration for maintaining polishing fluid are stablized.
Liquid level detection device 30 sends the liquid level detected for detecting the liquid level of polishing fluid in accumulator tank 10 in real time
To controller 20, controller 20 calculates the volume of polishing fluid in accumulator tank 10 according to the cross-sectional area and liquid level of accumulator tank 10.
Copper ion concentration and acid group concentration detection apparatus 40 are dense for detecting the copper ion of polishing fluid in accumulator tank 10 in real time
Degree and acid group concentration, and the copper ion concentration detected and acid group concentration are sent to controller 20, controller 20 receive copper from
After copper ion concentration and acid group concentration that sub- concentration and acid group concentration detection apparatus 40 are sent, by copper ion concentration and acid group concentration
Respectively compared with the copper ion target concentration value of setting and acid group target concentration value, control instruction is sent according to comparative result.
Specifically, if copper ion concentration in the polishing fluid that copper ion concentration and acid group concentration detection apparatus 40 detect
Higher than the copper ion target concentration value of setting, controller 20 is according to the target concentration value of copper ion in polishing fluid and detectable concentration value
Difference and be delivered to electroplanting device 60 carry out electroplating reaction polishing fluid volume ratio between correspondence and accumulator tank
The volume of polishing fluid calculates the volume that need to be delivered to the polishing fluid that electroplanting device 60 carries out electroplating reaction in 10, and is followed to liquid
Ring control device 50 sends the first control instruction and sends the second control instruction to electroplanting device 60.Liquid circulation control device 50
The polishing fluid of certain volume in accumulator tank 10 is delivered to electroplanting device 60 after the first control instruction that reception controller 20 is sent
Interior carry out electroplating reaction, the certain volume are delivered to electroplanting device 60 with the need that controller 20 calculates and carry out electroplating reaction
Polishing fluid volume it is consistent, liquid circulation control device 50 also by electroplanting device 60 carry out electroplating reaction after liquid it is defeated
It sends back in accumulator tank 10.The second control instruction and liquid circulation control device 50 that the reception controller 20 of electroplanting device 60 is sent are defeated
Electroplating reaction is carried out after the polishing fluid sent, the copper ion in polishing fluid is made to be transferred on the cathode of electroplanting device 60, so as to throwing
Copper ion in light liquid is recycled, and thereby reduces the concentration of copper ion in polishing fluid, makes the dense of copper ion in polishing fluid
Degree is consistent with target concentration value.If the copper ion in the polishing fluid that copper ion concentration and acid group concentration detection apparatus 40 detect
Concentration is equal to or less than the copper ion target concentration value of setting, that is, shows that the concentration of copper ion in polishing fluid does not interfere with buffer
Skill effect, liquid circulation control device 50 do not convey polishing fluid, copper ion concentration and acid group Concentration Testing dress to electroplanting device 60
Put the concentration that 40 continuation detect the copper ion of polishing fluid in accumulator tank 10 in real time.
If the acid group concentration in the polishing fluid that copper ion concentration and acid group concentration detection apparatus 40 detect is less than setting
Acid group target concentration value, controller 20 according to the difference of the target concentration value of acid group in polishing fluid and detectable concentration value with from storage
Deposit the correspondence and accumulator tank 10 between the volume ratio for the polishing fluid stoste discharged or supplemented into accumulator tank 10 in slot 10
The volume that the volume of middle polishing fluid calculates the polishing fluid that need to be discharged from accumulator tank 10 need to either be supplemented into accumulator tank 10
Polishing fluid stoste volume, and respectively to liquid emission control system 90 send the 3rd control instruction and to liquid supply control
Device 80 sends the 4th control instruction.Liquid emission control system 90 will storage after receiving the 3rd control instruction that controller 20 is sent
The polishing fluid dispatch of certain volume in slot 10 is deposited to waste liquid pool 91.Liquid feeding controller 80 is connected with cache slot 72, delays
It deposits slot 72 with stoste slot 71 to be connected, stoste slot 71 supplies suitable polishing fluid stoste to cache slot 72, changes in cache slot 72
The physical property of polishing fluid stoste makes the physical property of polishing fluid stoste and the polishing fluid stored in accumulator tank 10 in cache slot 72
Physical property it is consistent, the physical property refers to the viscosity of polishing fluid, temperature etc..Liquid feeding controller 80 receives control
After the 4th control instruction that device 20 processed is sent, liquid feeding controller 80 is by the polishing fluid stoste of certain volume in cache slot 72
Supplied in accumulator tank 10, the acid group concentration of polishing fluid in accumulator tank 10 is adjusted to target concentration value.It is discharged from accumulator tank 10
Polishing fluid polishing fluid stoste of the volume with being supplemented into accumulator tank 10 volume it is identical, and calculated with controller 20
The volume phase for the polishing fluid stoste that the volume for the polishing fluid that need to be discharged from accumulator tank 10 need to either be supplemented into accumulator tank 10
Unanimously.It is set if the acid group concentration in the polishing fluid that copper ion concentration and acid group concentration detection apparatus 40 detect is greater than or equal to
Fixed acid group target concentration value shows that the concentration of acid group in polishing fluid does not interfere with glossing effect, liquid emission control
Device 90 will not will not be by cache slot by the polishing fluid dispatch in accumulator tank 10 to waste liquid pool 91, liquid feeding controller 80
Polishing fluid stoste in 72 is supplied in accumulator tank 10, and copper ion concentration and acid group concentration detection apparatus 40 continue detection storage in real time
Deposit the concentration of the acid group of polishing fluid in slot 10.
Fig. 2 and Fig. 3 are referred to, for a kind of flow chart for the method that polishing fluid concentration is controlled to stablize of the present invention.Implementing this
Before invention the method, first pass through experiment establish in polishing fluid the difference of the target concentration value of copper ion and detectable concentration value with
The one-to-one function model being delivered between the volume ratio for the polishing fluid that electroplanting device 60 carries out electroplating reaction and polishing
The target concentration value of acid group is discharged or supplemented into accumulator tank 10 with the difference of detectable concentration value and from accumulator tank 10 in liquid
One-to-one function model between the volume ratio of polishing fluid stoste.
Particularly, the method for the invention includes the following steps：
S110 detects the concentration of the copper ion of polishing fluid in accumulator tank 10；
S120, by the concentration of the copper ion detected compared with the target concentration value of the copper ion set, if detect
The concentration of copper ion is less than or equal to the target concentration value of copper ion, then returns to S110 steps；If the copper ion detected is dense
Degree then performs S130 steps more than the target concentration value of copper ion；
The polishing fluid of certain volume in accumulator tank 10 is delivered to electroplanting device 60 and carries out electroplating reaction by S130, thus will
Copper ion recycles in polishing fluid, and the liquid in electroplanting device 60 is transmitted back in accumulator tank 10, and then reduces in accumulator tank 10
The concentration of the copper ion of polishing fluid and returns to S110 steps to the target concentration value of copper ion；
S140 detects the concentration of the acid group of polishing fluid in accumulator tank 10；
S150, by the concentration of the acid group detected compared with the target concentration value of the acid group set, if the acid group detected
Concentration be greater than or equal to acid group target concentration value, then return to S140 steps；If the concentration of the acid group detected is less than acid group
Target concentration value, then perform S160 steps；
S160 discharges the polishing fluid of certain volume to waste liquid pool 91 from accumulator tank 10；
S170 supplements the polishing fluid stoste of same volume to accumulator tank 10 from cache slot 72, and returns to S140 steps.
Above-mentioned steps S140 to S170 can be performed before step S110 to S130, that is to say, that the present invention can be first
The concentration of the copper ion of polishing fluid in accumulator tank 10 is adjusted to target concentration value, then adjusts the acid of polishing fluid in accumulator tank 10 again
The concentration of root can also first adjust the concentration of the acid group of polishing fluid in accumulator tank 10 to target concentration value, so to target concentration value
The concentration of the copper ion of polishing fluid in accumulator tank 10 is adjusted again afterwards to target concentration value.
It can be seen from the above, the present invention is a kind of to control the system and method that polishing fluid concentration is stablized by will be in accumulator tank 10
Polishing fluid is delivered to electroplanting device 60 and carries out electroplating reaction, so as to which the copper ion in polishing fluid be recycled, to reduce in polishing fluid
The concentration of copper ion and the polishing fluid of certain volume in accumulator tank 10 is discharged and supplements the polishing fluid stoste of same volume,
To improve the concentration of acid group in polishing fluid, and then the copper ion concentration of polishing fluid and acid group concentration in accumulator tank 10 is made to remain steady
It is fixed, the polishing uniformity of unstressed copper polishing and the repeatability of glossing are improved, simultaneously as polishing fluid is recyclable
It utilizes, therefore, greatly reduces the cost of unstressed copper polishing.
In conclusion a kind of system and method that polishing fluid concentration is controlled to stablize of the present invention pass through the above embodiment and phase
Close schema explanation, specifically, it is full and accurate disclose correlation technique, those skilled in the art is allow to implement according to this.More than and
The embodiment is used only to illustrate the present invention rather than for limiting the present invention, and interest field of the invention should be by this hair
Bright claim defines.Replacement of change or equivalence element as component number described herein etc. still should all belong to this
The interest field of invention.
Claims (9)
1. a kind of system that polishing fluid concentration is controlled to stablize, which is characterized in that including：Accumulator tank, controller, Concentration Testing dress
It puts, liquid circulation control device, electroplanting device, liquid emission control system and liquid feeding controller, wherein, accumulator tank storage
Polishing fluid is deposited, concentration detection apparatus detects the concentration of metal ions of polishing fluid and acid group concentration and the gold that will be detected in accumulator tank
Belong to ion concentration and acid group concentration is sent to controller, the polishing fluid in accumulator tank can be delivered to by liquid circulation control device
Electroplanting device carries out electroplating reaction and the liquid in electroplanting device is transmitted back to accumulator tank, and electroplanting device is used for electroplating reaction and will
Metal ion recycling in polishing fluid, liquid emission control system can discharge the polishing fluid in accumulator tank, liquid supply control
Device processed can supplement polishing fluid stoste to accumulator tank, and controller receives the concentration of metal ions and acid that concentration detection apparatus is sent
Root concentration and by the concentration of metal ions of reception and acid group concentration respectively with the metal ion target concentration value of setting and acid group mesh
Mark concentration value compares, according to comparative result respectively to liquid circulation control device, electroplanting device, liquid emission control system and liquid
Body feeding controller sends control instruction to adjust in accumulator tank the concentration of metal ions of polishing fluid and acid group concentration to target
Concentration value；
Wherein, the body of the volume for the polishing fluid discharged from the accumulator tank and the polishing fluid stoste supplemented into the accumulator tank
Product is identical, and the volume of the polishing fluid that need to be discharged from the accumulator tank calculated with the controller or need to be to described
The volume for the polishing fluid stoste supplemented in accumulator tank is consistent；
The liquid feeding controller is connected with a cache slot, and being stored in the cache slot has with being stored in the accumulator tank
Polishing fluid the consistent polishing fluid stoste of physical property.
2. the system that control polishing fluid concentration according to claim 1 is stablized, which is characterized in that when concentration detection apparatus is examined
When the concentration of metal ions of polishing fluid is higher than metal ion target concentration value in the accumulator tank measured, controller follows respectively to liquid
Ring control device and electroplanting device send the first control instruction and the second control instruction, and liquid circulation control device receives the first control
The polishing fluid of certain volume in accumulator tank is delivered to electroplanting device after system instruction and carries out electroplating reaction, and will be in electroplanting device
Liquid is transmitted back to accumulator tank, until concentration detection apparatus detects that the concentration of metal ions of polishing fluid in accumulator tank is less than or equal to
During metal ion target concentration value, liquid circulation control device stops conveying polishing fluid to electroplanting device.
3. the system that control polishing fluid concentration according to claim 1 is stablized, which is characterized in that when concentration detection apparatus is examined
When the acid group concentration of polishing fluid is less than acid group target concentration value in the accumulator tank measured, controller fills respectively to liquid emission control
It puts and sends the 3rd control instruction and the 4th control instruction with liquid feeding controller, liquid emission control system receives the 3rd control
The polishing fluid of certain volume in accumulator tank is discharged after system instruction, to storage after liquid feeding controller the 4th control instruction of reception
The polishing fluid stoste of slot supply certain volume is deposited, until concentration detection apparatus detects that the acid group concentration of polishing fluid in accumulator tank is high
When acid group target concentration value, liquid emission control system stops discharging the polishing fluid in accumulator tank, liquid supply
Control device also stops supplying polishing fluid stoste to accumulator tank.
4. the system that control polishing fluid concentration according to claim 3 is stablized, which is characterized in that liquid emission control system
The polishing fluid of certain volume in accumulator tank is expelled to a waste liquid pool.
5. the system that control polishing fluid concentration according to claim 1 is stablized, which is characterized in that cache slot and a stoste slot
It is connected, stoste slot supplies polishing fluid stoste to cache slot.
6. the system that control polishing fluid concentration according to claim 1 is stablized, still further comprises a liquid level detection device,
Liquid level detection device is connected with controller, for detecting the liquid level of polishing fluid in accumulator tank, and the liquid level detected is sent
To controller, controller receives the liquid level and the volume of polishing fluid in accumulator tank is calculated according to the cross-sectional area of accumulator tank.
A kind of 7. method that polishing fluid concentration is controlled to stablize, which is characterized in that including：
Detect the concentration of metal ions of polishing fluid and acid group concentration in accumulator tank；
By the concentration of metal ions detected and acid group concentration respectively with the metal ion target concentration value of setting and acid group target
Concentration value compares, and adjusts in accumulator tank the concentration of metal ions of polishing fluid and acid group concentration respectively according to comparative result to target rich
Angle value；
Wherein, when the acid group concentration of polishing fluid in the accumulator tank detected is less than acid group target concentration value, by accumulator tank one
Determine the polishing fluid discharge of volume, and to the polishing fluid stoste of accumulator tank supply certain volume, the throwing discharged from the accumulator tank
The volume of polishing fluid stoste of the volume of light liquid with being supplemented into the accumulator tank is identical, and with calculate need to be from the storage
The volume or the volume for the polishing fluid stoste that need to be supplemented into the accumulator tank for depositing the polishing fluid discharged in slot are consistent；
One cache slot is provided, in the cache slot storage have the physical property of the polishing fluid with being stored in the accumulator tank consistent
Polishing fluid stoste.
8. a kind of method that polishing fluid concentration is controlled to stablize according to claim 7, which is characterized in that when the storage detected
When depositing the concentration of metal ions of polishing fluid in slot higher than metal ion target concentration value, by the polishing fluid of certain volume in accumulator tank
It is delivered to electroplanting device and carries out electroplating reaction, and the liquid in electroplanting device is transmitted back to accumulator tank, until detecting accumulator tank
When the concentration of metal ions of middle polishing fluid is less than or equal to metal ion target concentration value, stop conveying polishing to electroplanting device
Liquid.
9. a kind of method that polishing fluid concentration is controlled to stablize according to claim 7, which is characterized in that stored when detecting
When the acid group concentration of polishing fluid is greater than or equal to acid group target concentration value in slot, stop discharging the polishing fluid in accumulator tank,
Stop supplying polishing fluid stoste to accumulator tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210375488.7A CN103699143B (en) | 2012-09-27 | 2012-09-27 | The system and method that polishing fluid concentration is controlled to stablize |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210375488.7A CN103699143B (en) | 2012-09-27 | 2012-09-27 | The system and method that polishing fluid concentration is controlled to stablize |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103699143A CN103699143A (en) | 2014-04-02 |
| CN103699143B true CN103699143B (en) | 2018-05-18 |
Family
ID=50360707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210375488.7A Active CN103699143B (en) | 2012-09-27 | 2012-09-27 | The system and method that polishing fluid concentration is controlled to stablize |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103699143B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104805493A (en) * | 2015-04-07 | 2015-07-29 | 安徽江南鸣放电子科技有限公司 | Zinc plated copper electroplating solution regulating device |
| CN108919844A (en) * | 2018-05-15 | 2018-11-30 | 电子科技大学 | A kind of real-time solution concentration automatic control system of chemical reaction rate |
| CN112639452A (en) * | 2018-09-07 | 2021-04-09 | 深圳帧观德芯科技有限公司 | Electroplating control system and method |
| CN110712113A (en) * | 2019-10-23 | 2020-01-21 | 东旭科技集团有限公司 | Curved glass polishing machine and online monitoring and adjusting method thereof |
| CN112892391B (en) * | 2021-01-27 | 2022-07-12 | 中国工程物理研究院激光聚变研究中心 | Polishing solution moisture online adjustment precision control device and method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5058560B2 (en) * | 2006-10-26 | 2012-10-24 | 株式会社平間理化研究所 | Etching solution management device |
| TWI406330B (en) * | 2007-09-26 | 2013-08-21 | Dainippon Screen Mfg | Apparatus for and method of processing substrate |
| CN201386136Y (en) * | 2009-04-15 | 2010-01-20 | 苏州市飞莱克斯电路电子有限公司 | Concentration control device of flexible circuit board etching liquid |
| CN201686754U (en) * | 2010-05-13 | 2010-12-29 | 王红雨 | Automatic control device for extracting copper by electrolyzing waste etching liquid |
| CN102569015A (en) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device |
-
2012
- 2012-09-27 CN CN201210375488.7A patent/CN103699143B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103699143A (en) | 2014-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103699143B (en) | The system and method that polishing fluid concentration is controlled to stablize | |
| CN106191934B (en) | Electrolyte conveying and generating means | |
| US20160190007A1 (en) | A method for microvia filling by copper electroplating with tsv technology for 3d copper interconnection at high aspect ratio | |
| CN101978486A (en) | Methods and apparatuses for determining thickness of a conductive layer | |
| CN103692293B (en) | non-stress polishing device and polishing method | |
| CN110016700B (en) | Surface-enhanced Raman spectrum silver-plated active substrate and preparation method thereof | |
| CN103255452A (en) | Selective metal electro-deposition device and application thereof | |
| CN109715866A (en) | Wet treatment system and its operating method | |
| CN109822401B (en) | Active control shearing action and temperature induction gradient thickening polishing method | |
| CN106868557A (en) | A kind of accurate prosthetic device and control system based on electrochemical deposition principle | |
| CN103668420A (en) | Automatic resistance adjusting device for resistance strain gauge and resistance adjusting method | |
| CN107221486B (en) | Method of plasma processing | |
| CN107460508B (en) | A kind of additive package and the technique for preparing 6 μm of high-performance electronic copper foils | |
| CN102330085B (en) | Composite processing method and device of multilayer film by chemical plating and jet electroplating | |
| CN209039621U (en) | Electroplanting device and its anode assemblies | |
| US20070181432A1 (en) | Electrolytic processing apparatus and substrate processing apparatus and method | |
| CN108149243A (en) | A kind of bundling electrode electric spark deposition reparation and reproducing method and device | |
| CN110172725A (en) | Electro-plating method, electroplanting device and its anode assemblies | |
| WO2005035836B1 (en) | Volume measurement apparatus and method | |
| CN108441861A (en) | A kind of method and device of bundling electrode electric spark deposition machining multilayer film | |
| Wu et al. | Two-step electrochemical mechanical polishing of pure copper | |
| JP2012178424A (en) | Etchant concentration management apparatus | |
| CN104264949A (en) | Mortar spraying device | |
| CN102157436A (en) | Copper electroplating method capable of reducing metal damage | |
| CN109913935B (en) | Copper ion supplementing device and supplementing method for electroplating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building 4 Patentee before: ACM (SHANGHAI) Inc. |
|
| CP03 | Change of name, title or address |