CN103685992B - Generate the method and imaging sensor of high dynamic range images - Google Patents

Generate the method and imaging sensor of high dynamic range images Download PDF

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Publication number
CN103685992B
CN103685992B CN201310753717.9A CN201310753717A CN103685992B CN 103685992 B CN103685992 B CN 103685992B CN 201310753717 A CN201310753717 A CN 201310753717A CN 103685992 B CN103685992 B CN 103685992B
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pixel
sub
light sensing
sensing mode
imaging sensor
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CN201310753717.9A
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CN103685992A (en
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李琛
陈嘉胤
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上海集成电路研发中心有限公司
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Abstract

The invention discloses a kind of methods and imaging sensor generating high dynamic range images.Imaging sensor, which includes several, has the pixel unit and ON-OFF control circuit merged with schizotype.Each pixel unit includes several sub-pixel groups of irregular alignment, and each sub-pixel group includes several sub-pixels.For each sub-pixel group, one ON-OFF control circuit is set, for under the same time for exposure, the different number sub-pixels in each sub-pixel group are opened according to illumination condition, imaging sensor is set to be in low light sensing mode, middle light sensing mode, high light sensing mode, the output signal of photosensitive unit in sub-pixel is opened in output, low bearing member, image is generated according to the output signal under different light sensing modes, middle bearing member, image, high bearing member, image simultaneously accordingly generates high definition dynamic image, the generation of high definition dynamic image is realized under the same time for exposure, also avoid sensitivity and dynamic range, the contradiction of image area sensor, eliminate Moire fringe.

Description

Generate the method and imaging sensor of high dynamic range images

Technical field

The invention belongs to field of image sensors, specifically, be related to it is a kind of generate high dynamic range images method and Imaging sensor.

Background technology

Imaging sensor is the important component of camera.Traditional camera has used different images from modern digital cameras Sensor.The imaging sensor that traditional camera uses is realized by film, and the image sensing that modern digital cameras uses Device is to pass through cmos image sensor(CMOS IMAGE SENSOR, hereinafter referred to as CIS)Or charge couple device(Charge- Coupled Device, hereinafter referred to as CCD)To realize.

For traditional camera, film can be divided into black and white film and color film.But no matter which type of glue Piece all includes two elements under normal circumstances:The sensitive emulsion layer of one single-layer or multi-layer, an emulsion Support, that is, chip base of layer.Sensitive emulsion layer is made of emulsion, and emulsion suspends at random indeed through in gelatin medium Photosensitive subparticle is formed.In general, the material of the subparticle of photaesthesia is silver halide particle.

For using for digital camera of the CCD device as imaging sensor, the scientific research in profession and industrial circle, tool There is the CCD of high s/n ratio to become first choice;In high-end photography and vedio recording field, the CCD that can provide high image quality is also quite favored.It is right In using for digital camera of the CIS devices as imaging sensor, obtained extensively in IP Camera and mobile phone photograph module General application., CCD may be better than CIS in terms of picture quality.But with the continuous improvement of CIS technologies, a part of CIS's CCD of the picture quality already close to same specification.

High dynamic range images(High-Dynamic Range, abbreviation HDR)Compared to common image, can provide more Dynamic range and image detail, therefore, in some current high-end cameras and mobile phone(Such as iPhone)It is obtained for extensive use. In the prior art, in order to realize that HDR forms different low-dynamic range (Low- typically in different exposure time Dynamic Range, abbreviation LDR) image.Later, it is synthesized using the LDR image of corresponding best details of each time for exposure Final HDR image, to reflect the visual effect in people's true environment.

But it in the modern digital cameras based on CMOS, has the following technical problems:

(1)There are contradictions between sensitivity and dynamic range, image area sensor

For a pixel unit, if the area of the pixel is bigger, will have more outstanding sensitivity and Higher dynamic range.Therefore, current list is anti-, micro- list, high-definition monitoring etc. using high-end cmos image sensor equipment In, preceding with larger pixel of generally use is realized according to technology.But in order to make the size of imaging sensor become smaller, and must Pixel unit as small as possible must be adopted.Therefore, sensitivity and compared with there are lances between dynamic range, image sensor pixel size Shield.

(2)Either CIS or CCD will appear Moire fringe, and there are contradictions for Moire fringe and resolution ratio

Moire fringe is the visual results interfered with constant angle and frequency between two lines or two objects.People When eye can not differentiate this two lines or two objects, the decorative pattern of interference is can only see, this optical phenomena is exactly Moire fringe.

In traditional camera, due to photaesthesia subparticle suspend randomness, when using film sensor shoot When object, even if object is made of regular lines or figure, Moire fringe will not occur.

Figure 13 is the planar alignment schematic diagram of CIS or ccd image sensor in the prior art;Figure 14 is the prior art The Moire fringe schematic diagram of middle appearance;As shown in figure 13, due to its regularly arranged composition of pixel generally use, shooting by When regular streaks or the object of figure constitution, it will usually Moire fringe occur, as shown in figure 14.

The reason of analysis Moire fringe occurs, is essentially due to sample of signal frequency close to photoreceptor resolution ratio institute It causes.Therefore, in order to avoid Moire fringe, the method for generally use is with a low pass filter the letter higher than photoreceptor resolution ratio It number filters out.But the presence of low pass filter reduces the resolution ratio for reducing imaging sensor imaging again.Therefore, resolution ratio and Usually there is contradiction between Moire fringe.

(3)In order to obtain HDR image, need that the different time for exposure is separately provided

As previously mentioned, in the prior art, final HDR image, needs, in different exposure time, to be formed different in order to obtain Low-dynamic range (Low-Dynamic Range, abbreviation LDR) image synthesized in the LDR image for selecting best details it is final HDR image.

Invention content

Technical problem to be solved by the invention is to provide a kind of methods and image sensing generating high dynamic range images Device.

In order to solve the above technical problem, the present invention provides it is a kind of generate high dynamic range images imaging sensor, It, which includes several, has the pixel unit and ON-OFF control circuit merged with schizotype;Wherein:Each pixel unit includes Several sub-pixel groups of irregular alignment, each sub-pixel group include several sub-pixels;It is arranged for each sub-pixel group One ON-OFF control circuit, under the same time for exposure, the difference in each sub-pixel group to be opened according to illumination condition Number sub-pixel, makes imaging sensor be in low light sensing mode, middle light sensing mode, high light sensing mode, and sub-pixel is opened in output The output signal of middle photosensitive unit generates low bearing member, image, middle bearing member, image, height according to the output signal under different light sensing modes Bearing member, image simultaneously accordingly generates high definition dynamic image.

Preferably, in one embodiment of this invention, the arrangement of the pixel unit uses bayer patterns, each pixel Unit includes a red sub-pixel group, two yellow sub-pixel groups, a blue subpixels group.

Preferably, in one embodiment of this invention, the ON-OFF control circuit includes signal-obtaining transistor, selection crystalline substance Body pipe, reset transistor, source following transistor, wherein signal-obtaining transistor and each sub-pixel in the sub-pixel group Corresponding photosensitive unit connection, the output signal for reading each photosensitive unit;Selection transistor is for choosing a pixel list Member, reset transistor follow output signal output of the transistor for that will read for being resetted to the output signal of reading Output signal is output to peripheral circuit and is handled, image is made to pass when the selection transistor gates to selection transistor Sensor is in low light sensing mode, middle light sensing mode, high light sensing mode.

Preferably, in one embodiment of this invention, the corresponding signal-obtaining transistor of different subpixel has respectively solely Vertical gating signal makes image sensing to open several sub-pixels in each sub-pixel group parallel according to illumination condition Device is in low light sensing mode or middle light sensing mode, is sequentially output the output signal of photosensitive unit in the sub-pixel of several unlatchings; Alternatively, to open all sub-pixels in each sub-pixel group parallel according to illumination condition, so that imaging sensor is in high and feel Optical mode, while exporting the output signal of photosensitive unit in each sub-pixel.

In order to solve the above-mentioned technical problem, the present invention also provides a kind of high dynamic range is generated using above-mentioned imaging sensor Enclose the method for image comprising:

Step 1, under the same time for exposure, opened in each sub-pixel group not according to illumination condition ON-OFF control circuit With number sub-pixel, imaging sensor is made to be in low light sensing mode, middle light sensing mode, high light sensing mode;

Step 2, output open the output signal of photosensitive unit in sub-pixel;

Step 3 generates low bearing member, image, middle bearing member, image, high sensitogram according to the output signal under different light sensing modes Picture simultaneously accordingly generates high definition dynamic image.

Preferably, in one embodiment of this invention, the step 1 includes:

Selection transistor in ON-OFF control circuit is strobed to choose a pixel unit;

Signal-obtaining transistor exports the output signal of photosensitive unit in the pixel unit chosen and passes through reset transistor The output signal of reading is resetted successively;

It follows transistor for the output signal of reading to be output to selection transistor, output signal is output to periphery Circuit is handled, and imaging sensor is made to be in low light sensing mode, middle light sensing mode, high light sensing mode.

Preferably, in one embodiment of this invention, in the pixel unit that the signal-obtaining transistor output is chosen The output signal of photosensitive unit includes:

The corresponding signal-obtaining transistor of different subpixel has separate gating signal, to according to illumination condition Several sub-pixels in each sub-pixel group are opened parallel, and imaging sensor is made to be in low light sensing mode or middle light sensing mode, It is sequentially output the output signal of photosensitive unit in the sub-pixel of several unlatchings;Alternatively, to be opened parallel according to illumination condition All sub-pixels in each sub-pixel group, make imaging sensor be in high light sensing mode, while exporting and feeling in each sub-pixel The output signal of light unit.

Compared with currently existing scheme, in the present invention, imaging sensor, which includes several, has the picture merged with schizotype Plain unit and ON-OFF control circuit.Each pixel unit includes several sub-pixel groups of irregular alignment, each sub-pixel group Including several sub-pixels.One ON-OFF control circuit is set for each sub-pixel group, is used under the same time for exposure, Open the different number sub-pixels in each sub-pixel group according to illumination condition, make imaging sensor be in low light sensing mode, Middle light sensing mode, high light sensing mode, the output signal of photosensitive unit in sub-pixel is opened in output, according under different light sensing modes Output signal generates low bearing member, image, middle bearing member, image, high bearing member, image and accordingly generates high definition dynamic image, same The generation of high definition dynamic image is realized under time for exposure, in addition, it is thus also avoided that sensitivity and dynamic range, image sensing Contradiction between device area, eliminates Moire fringe.

Description of the drawings

Fig. 1 is the floor map of imaging sensor in the embodiment of the present invention one;

Fig. 2 is the structural schematic diagram of ON-OFF control circuit in the embodiment of the present invention two;

Fig. 3 is the control sequential that imaging sensor is in low light sensing mode in the embodiment of the present invention;

Fig. 4 is the image sensor plane schematic diagram under low light sensing mode in the embodiment of the present invention.

Fig. 5 is the control sequential that imaging sensor is in middle light sensing mode in the embodiment of the present invention;

Fig. 6 is the image sensor plane schematic diagram under middle light sensing mode in the embodiment of the present invention;

Fig. 7 is the control sequential that imaging sensor is in high light sensing mode in the embodiment of the present invention;

Fig. 8 is the method flow diagram that high dynamic range images are generated in the embodiment of the present invention;

It is respectively the low bearing member, image for applying the technical solution of the above embodiment of the present invention to obtain, middle sense shown in Fig. 9-Figure 12 The high dynamic range images of light image, high bearing member, image and synthesis;

Figure 13 is the planar alignment schematic diagram of CIS or ccd image sensor in the prior art;

Figure 14 is the Moire fringe schematic diagram occurred in the prior art.

Specific implementation mode

Carry out the embodiment that the present invention will be described in detail below in conjunction with schema and embodiment, thereby how the present invention is applied Technological means solves technical problem and reaches the realization process of technical effect to fully understand and implement.

In following embodiments of the present invention, imaging sensor, which includes several, has the pixel unit merged with schizotype And ON-OFF control circuit.Each pixel unit includes several sub-pixel groups of irregular alignment, if each sub-pixel group includes Dry sub-pixel.One ON-OFF control circuit is set for each sub-pixel group, is used under the same time for exposure, according to light Open the different number sub-pixels in each sub-pixel group according to condition, make imaging sensor be in low light sensing mode, in it is photosensitive The output signal of photosensitive unit in sub-pixel is opened in pattern, high light sensing mode, output, is believed according to the output under different light sensing modes It number generates low bearing member, image, middle bearing member, image, high bearing member, image and accordingly generates high definition dynamic image, in same exposure Between under realize the generation of high definition dynamic image, in addition, it is thus also avoided that sensitivity and dynamic range, image area sensor Contradiction, eliminate Moire fringe.

Fig. 1 is the floor map of imaging sensor in the embodiment of the present invention one;As shown in Figure 1 comprising several tools It includes several sub-pixel groups of irregular alignment to have the pixel unit 101 of merging and schizotype, each pixel unit, each Sub-pixel group includes several sub-pixels.

In the present embodiment, a pixel unit 101 is simply only illustrated in Fig. 1, with the arrangement of the pixel unit 101 For bayer patterns, each pixel unit 101 include 111, two green sub-pixels groups 121 of a red sub-pixel group, One blue subpixels group 131.

Alternatively, pixel unit 101 is also not limited to bayer patterns, can also use other patterns.In addition, pixel Unit 101 is also not limited to be based on RGB three primary colors, other can also be used such as tetra- colors of CMMY.It repeats no more in detail.

In the present embodiment, the red sub-pixel group 111 includes three red sub-pixels 1111, each green sub-pixels group 121 include three green sub-pixels 1211, and blue subpixels group 131 includes three blue subpixels 1311.Therefore, a picture Plain unit 101 includes 3 red sub-pixels, 6 green sub-pixels, 3 blue subpixels, amounts to 12 sub-pixels.

Alternatively, the sub-pixel number in each sub-pixel group is not limited to three, can also be more or less than three, As long as division and the merging patterns of the present invention may be implemented.

In the present embodiment, it is expert between row, uses the arrangement mode of dislocation between the column and the column, for example misplace 1/ respectively 2 sub- pixel distances avoid the regularly arranged of pixel in imaging sensor.When the regular lines of shooting or figure, regular line Item or figure can not generate interference effect with the pel array of irregular alignment in imaging sensor, to effectively eliminate More The generation of striped.

Below only with the condition that illumination is strong light and dim light, to a certain single pixel unit in imaging sensor of the present invention Photosensitive area and the photosensitive area of the prior art do one it is simple compared with, to illustrate imaging sensor of the present invention due to larger photosensitive Area, to realize the shooting of high dynamic range images.

Under intense light conditions, red sub-pixel group(R1/R2/R3), green sub-pixels group(G1/G2/G3), green sub-pixels (G5/G6/G7), blue subpixels group(B1/B2/B3)It can be used respectively as 3 pixels.If the sense of each sub-pixel Light area is s, then under strong light, a set of pixel unit of the imaging sensor has 12 sub- pixels, and photosensitive area can Up to 12s.

Under low light condition, red sub-pixel group R1/R2/R3 can be used as 1 red pixel R, the sub- picture of green Plain group(G1/G2/G3)It is used as 1 green pixel Ga, green sub-pixels group(G4/G5/G6)It can be green as other 1 Color pixel Gb is used, blue word pixel groups(B1/B2/B3)Also it is used as 1 green pixel B.If each sub-pixel Area is s, then under dim light, there are 4 pixels, each pixel to be made of 3 sub-pixels, photosensitive area 3s is 3 times of a pixel point areas in existing.This pixel unit has higher dynamic compared with pixel unit in the prior art State range and sensitivity have preferable image appearance power under dim light.

In order to realize the low middle high light sensing mode of imaging sensor in the present embodiment, it is arranged for each sub-pixel group 101 One ON-OFF control circuit(It is not shown in figure), under the same time for exposure, being opened per height picture according to illumination condition Different number sub-pixels in plain group make imaging sensor be in low light sensing mode, middle light sensing mode, high light sensing mode, defeated Go out the output signal for opening photosensitive unit in sub-pixel, according to the output signal under different light sensing modes generate low bearing member, image, Middle bearing member, image, high bearing member, image simultaneously accordingly generate high definition dynamic image.

Since a pixel unit includes a blue of green sub-pixels group 121, one of red sub-pixel group 111, two Sub-pixel group 131, meanwhile, the red sub-pixel group 111 includes three red sub-pixels 1111(R1R2R3), each green Pixel groups 121 include three green sub-pixels(G1G2G3/G4G5G6), blue subpixels group 131 includes three blue subpixels 1311(B1B2B3).Therefore, it is red son to each sub-pixel group in order to realize division and the merging patterns of imaging sensor Pixel groups 111, green sub-pixels group 121, blue subpixels group 131 are both needed to one ON-OFF control circuit of configuration, to control wherein A few a sub-pixels be turned on and off.

Fig. 2 is the structural schematic diagram of ON-OFF control circuit in the embodiment of the present invention two, as shown in Fig. 2, ON-OFF control circuit Including signal-obtaining transistor 201, selection transistor 202, reset transistor 203, follow transistor 204, wherein signal-obtaining The photosensitive unit 205 corresponding with each sub-pixel in the sub-pixel group of transistor 201 connects, for reading photosensitive unit 205 Output signal;Selection transistor 202 is for choosing a pixel unit, reset transistor 203 to be used for the output signal to reading It is resetted, follows transistor 204 for the output signal of reading to be output to selection transistor 202, when the selection crystal When pipe 202 gates, output signal is output to peripheral circuit and is handled, imaging sensor is made to be in low light sensing mode, middle sense Optical mode, high light sensing mode.

It is corresponding to there is three senses since each sub-pixel group such as red sub-pixel group includes three red sub-pixels Light unit 205 such as light sensitive diode.In order to individually be operated to each photosensitive unit 204, each photosensitive unit 204 is all connected with There are a signal-obtaining transistor 201, the grid end of each signal-obtaining transistor 201 to be connected with a gating signal TXi, is elected to communication When number TXi sets high, the signal-obtaining transistor 201 is open-minded, exports the output signal of corresponding photosensitive unit 205.In order to choose certain The grid end of one pixel unit, selection transistor 202 is connected with a selected signal ROW, when selected signal ROW sets high, chooses Corresponding pixel unit.In order to reset, the grid end of reset transistor 203 is connected with a reset signal RX, as reset signal RX When setting high, reset transistor 203 is connected so that the current potential of P points is pulled high to Vdd, multiple to the charge of P points empty Position.Follow transistor 204 for the output signal of photosensitive unit 205 to be output to source from its grid end.

The connection relation of ON-OFF control circuit all parts is as follows:

The source of signal-obtaining transistor 201 is connect with the output end of photosensitive unit 205;Signal-obtaining transistor 201 Grid end is connect with gating signal TXi;The drain terminal of signal-obtaining transistor 201 is connect with the source of reset transistor 203.

The grid end of selection transistor 202 is connected with a selected signal ROW, drain terminal and the source 204 of transistor 204 is followed to connect It connects, source is as output end;The source of selection transistor 202 is connected with a tail current Vs.

The grid end of reset transistor 203 is connected with a reset signal RX, and source is connect with the grid end of transistor 204 is followed, Drain terminal is connected with voltage Vdd.

The grid end of transistor 204 is followed to be connect with the source of reset transistor 203, source and the leakage for choosing transistor 202 End connection, drain terminal are connected with voltage VDD.

In domain structure layout, for red pixel sub-pixel group(R1/R2/R3)Region, each The Scarlet Letter pixel correspond to One photosensitive unit, all transistors in ON-OFF control circuit are all located at the regional center position of these three red sub-pixels, As shown in the stain region in Fig. 1.Green sub-pixels group G1/G2/G3, green sub-pixels G4/G5/G6, blue subpixels B1/ The laying out pattern of B2/B3 is consistent with red sub-pixel laying out pattern, and details are not described herein.

Below by low light sensing mode, middle light sensing mode, the height to realizing imaging sensor using above-mentioned ON-OFF control circuit Light sensing mode is briefly described:

The corresponding signal-obtaining transistor 201 of different subpixel has separate gating signal, according to illumination condition Several sub-pixels in each sub-pixel group are opened parallel, and imaging sensor is made to be in low light sensing mode or middle light sensing mode, It is sequentially output the output signal of photosensitive unit in the sub-pixel of several unlatchings;

The corresponding signal-obtaining transistor 201 of different subpixel is opened according to illumination condition parallel in each sub-pixel group All sub-pixels make imaging sensor be in high light sensing mode, while exporting the output signal of photosensitive unit in each sub-pixel.

Below by low light sensing mode, middle light sensing mode, the height to realizing imaging sensor using above-mentioned ON-OFF control circuit Light sensing mode is described in detail:

(1)Imaging sensor is set to work in low light sensing mode

By taking Fig. 2 as an example, it can define in each sub-pixel when only opening a sub-pixel, imaging sensor is in low photosensitive Pattern,

As shown in Fig. 2, selected signal ROW sets height, selection transistor 202 is open-minded, chooses a certain pixel unit.

Height is set by control gating signal TXi, the photosensitive unit 205 that signal-obtaining transistor 201 is correspondingly connected with Output signal is transferred to P points.For example, when TX1 sets height and TX2/TX3 is set low, the output signal of first photosensitive unit 205 passes Transport to P points.Equally, when TX2 sets height and TX1/TX3/ is set low, the output signal of second photosensitive unit 205 is transmitted to P points; When TX3 sets height and TX1/TX2 is set low, the output signal of third photosensitive unit 205 is transmitted to P points.

When reset signal RX sets high, reset transistor 203 is connected, and P points are connected with VDD, P point charges are emptied and answered Position;It follows transistor 204 to be connected, the signal of P points is output to source from its grid end, and gated transistor 202 is output to OUT。

Fig. 3 is the control sequential that imaging sensor is in low light sensing mode in the embodiment of the present invention, and Fig. 4 is that the present invention is implemented Image sensor plane schematic diagram in example under low light sensing mode.In conjunction with shown in Fig. 3 and Fig. 2 physical circuit illustrates how The output signal of a photosensitive unit 205 in sub-pixel group is only exported to realize the low light sensing mode of imaging sensor, with defeated Go out for the output signal of third photosensitive unit 205:

In the T1 periods, the output signal of output third photosensitive unit 205:Reset signal RX sets height, reset transistor 203 Open-minded, P points are connected with VDD, and P point charges are emptied and resetted, then reset signal RX is set low, third gating signal TX3 sets height/first gating signal TX1 and second gating signal TX2 is set low, the output of third photosensitive unit 205 at this time Signal transmission is to P points.

After the output signal of each photosensitive unit 205 is transferred to P points, transistor 204 is followed to be connected, because of selected signal ROW Height is set, gating transistor 202 is also switched on, therefore, you can corresponding output signal is transferred to OUT terminal.

In above-mentioned control sequential shown in Fig. 3:

The time that RX signals are placed in high level is 1us~64us, preferably 4us;

The time that TX3 signals are placed in high level is 1us~64us, preferably 5us;

It is divided into 1us~5us, preferably 2us between ROW rising edges and RX signal rising times;

It is divided into 1us~20us, preferably 5us between RX failing edges and TX3 signal rising times;

TX3 signals failing edge is 5~40us, preferably 15us with ROW failing edge time intervals.

During entire examples detailed above, the gating signal TX1 of first photosensitive unit, 205, second photosensitive units 205, Gating signal TX2 signals are always low, ensure that the output signal of first photosensitive unit, 205, second photosensitive units 205 not It is read namely its corresponding sub-pixel does not work to picture shooting at this time.

It should be noted that in the above-described example, for exporting the output signal of third photosensitive unit 205, to figure It is schematically illustrated as how sensor is operated under low light sensing mode.It is of course also possible to select other two photosensitive lists Any one of member realizes the low light sensing mode of imaging sensor.

(2)Imaging sensor is set to work in middle light sensing mode

Fig. 5 is the control sequential that imaging sensor is in middle light sensing mode in the embodiment of the present invention, and Fig. 6 is that the present invention is implemented Image sensor plane schematic diagram in example under middle light sensing mode.In conjunction with shown in Fig. 5, Fig. 6 and Fig. 2 physical circuit illustrates such as The output signal what only exports certain two photosensitive unit 205 in sub-pixel group realizes the middle light sensing mode of imaging sensor, For exporting the output signal of first photosensitive unit 205 and second photosensitive unit 205:

2 small pixels of sub-pixel group, which merge, becomes the use of 1 big pixel.

In the T1 periods, gating signal TX1/TX2 signals are merged into a signal TX to use, i.e. gating signal TX1/TX2 Height is set simultaneously, and gating signal TX3 is set low, the output signal of only first photosensitive unit 205 and second photosensitive unit 205 Simultaneous transmission is to P points.

After the output signal of first and second photosensitive unit 205 is transferred to P points, transistor 204 is followed to be connected, because of choosing Middle signal ROW sets height, and gating transistor 202 is also switched on, therefore, you can corresponding output signal is transferred to OUT terminal.

During entire examples detailed above, first photosensitive unit, 205, second photosensitive units 205, PD2 gating signal TX1, gating signal TX2 signals are always high, ensure that the output letter of first photosensitive unit, 205, second photosensitive units 205 It number reads, and the gating signal TX3 of third photosensitive unit 205 is set low, and corresponding sub-pixel does not act as picture shooting at this time With.

It should be noted that in the above-described example, the output signal to export first and two photosensitive unit 205 is Example, is schematically illustrated to how imaging sensor is operated under middle light sensing mode.It is of course also possible to select any other Two photosensitive units realize the low light sensing mode of imaging sensor.

In above-mentioned control sequential shown in fig. 5:

The time that RX signals are placed in high level is 1us~64us, preferably 4us;

The time that TX1, TX2 signal are placed in high level is 1us~64us, preferably 5us;

It is divided into 1us~5us, preferably 2us between ROW rising edges and RX signal rising times;

It is divided into 1us~20us, preferably 5us between RX failing edges and TX1, TX2 signal rising time;

TX1, TX2 signal failing edge and ROW failing edge time intervals are 5~40us, preferably 15us.

(3)Imaging sensor is set to work in high light sensing mode

Unlike low light sensing mode among the above, 3 small pixels of sub-pixel group, which merge, becomes the use of 1 big pixel.

Fig. 7 is that imaging sensor is in the control sequential of high light sensing mode in the embodiment of the present invention, under high light sensing mode Image sensor plane schematic diagram is as shown in Figure 1.In conjunction with shown in Fig. 7, Fig. 1 and Fig. 2 physical circuit illustrates.

In the T1 periods, gating signal TX1/TX2/TX3 signals are merged into a signal TX to use, i.e. gating signal TX1/ TX2/TX3 sets height simultaneously, the output signal simultaneous transmission of three photosensitive units 205 to P points.At this point, as shown in fig. 7, being this hair Imaging sensor is in the control sequential of merging patterns in bright embodiment.

In above-mentioned control sequential shown in Fig. 7:

The time that RX signals are placed in high level is 1us~64us, preferably 4us;

The time that TX1, TX2, TX3 signal are placed in high level is 1us~64us, preferably 5us;

It is divided into 1us~5us, preferably 2us between ROW rising edges and RX signal rising times;

It is divided into 1us~20us, preferably 5us between RX failing edges and TX1, TX2, TX3 signal rising time;

TX1, TX2, TX3 signal failing edge and ROW failing edge time intervals are 5~40us, preferably 15us.

As shown in figure 8, to generate the method flow diagram of high dynamic range images in the embodiment of the present invention, may include:

Step 801, under the same time for exposure, opened in each sub-pixel group according to illumination condition ON-OFF control circuit Different number sub-pixels make imaging sensor be in low light sensing mode, middle light sensing mode, high light sensing mode;

Step 802, output open the output signal of photosensitive unit in sub-pixel;

Step 803 generates low bearing member, image according to the output signal under different light sensing modes, is middle bearing member, image, high photosensitive Image simultaneously accordingly generates high definition dynamic image.

There is the content of light step 801 and step 802 to can be found in the related description in Fig. 1-Fig. 8 in detail.

The detailed content of step 803, those of ordinary skill in the art can refer to related art, for example be calculated using HDR Method by low bearing member, image, middle bearing member, image, high bearing member, image, it can be achieved that be synthetically generated high definition dynamic image.

It is respectively the low bearing member, image for applying the technical solution of the above embodiment of the present invention to obtain, middle sense shown in Fig. 9-Figure 12 The high dynamic range images of light image, high bearing member, image and synthesis.

Several preferred embodiments of the present invention have shown and described in above description, but as previously described, it should be understood that the present invention Be not limited to form disclosed herein, be not to be taken as excluding other embodiments, and can be used for various other combinations, Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in the scope of the invention is set forth herein It is modified.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be in this hair In the protection domain of bright appended claims.

Claims (7)

1. a kind of imaging sensor generating high dynamic range images, which is characterized in that have including several and merge and divide The pixel unit and ON-OFF control circuit of pattern;Wherein:Each pixel unit includes several sub-pixel groups of irregular alignment, Each sub-pixel group includes several sub-pixels;One ON-OFF control circuit is set for each sub-pixel group, for same Under one time for exposure, the different number sub-pixels in each sub-pixel group are opened according to illumination condition, are made at imaging sensor In low light sensing mode or middle light sensing mode or high light sensing mode, the output signal of photosensitive unit in sub-pixel is opened in output, according to Output signal under different light sensing modes generates low bearing member, image or middle bearing member, image or high bearing member, image, and accordingly generates high definition Dynamic image.
2. imaging sensor according to claim 1, which is characterized in that the arrangement of the pixel unit uses bayer moulds Formula, each pixel unit include a red sub-pixel group and two yellow sub-pixel groups and a blue subpixels group.
3. imaging sensor according to claim 1, which is characterized in that the ON-OFF control circuit includes signal-obtaining crystalline substance Body pipe, selection transistor, reset transistor, source following transistor, wherein in signal-obtaining transistor and the sub-pixel group Each corresponding photosensitive unit connection of sub-pixel, the output signal for reading each photosensitive unit;Selection transistor is for selecting In a pixel unit, reset transistor follows transistor defeated for that will read for being resetted to the output signal of reading Go out signal and be output to selection transistor, when the selection transistor gates, output signal is output at peripheral circuit Reason, makes imaging sensor be in low light sensing mode or middle light sensing mode or high light sensing mode.
4. imaging sensor according to claim 3, which is characterized in that the corresponding signal-obtaining transistor of different subpixel With separate gating signal, to open several sub-pixels in each sub-pixel group parallel according to illumination condition, So that imaging sensor is in low light sensing mode or middle light sensing mode, is sequentially output photosensitive unit in the sub-pixel of several unlatchings Output signal;Alternatively, to open all sub-pixels in each sub-pixel group parallel according to illumination condition, make imaging sensor In high light sensing mode, while exporting the output signal of photosensitive unit in each sub-pixel.
5. a kind of method generating high dynamic range images using any one of imaging sensors of claim 1-4, special Sign is, including:
Step 1, under the same time for exposure, the different numbers in each sub-pixel group are opened according to illumination condition ON-OFF control circuit Mesh sub-pixel makes imaging sensor be in low light sensing mode or middle light sensing mode or high light sensing mode;
Step 2, output open the output signal of photosensitive unit in sub-pixel;
Step 3 generates low bearing member, image or middle bearing member, image or high bearing member, image according to the output signal under different light sensing modes, And accordingly generate high definition dynamic image.
6. according to the method described in claim 5, it is characterized in that, the step 1 includes:
Selection transistor in ON-OFF control circuit is strobed to choose a pixel unit;
Signal-obtaining transistor exports the output signal of the photosensitive unit in the pixel unit chosen and by reset transistor pair The output signal of reading is resetted successively;
Follow transistor that the output signal of reading is output to selection transistor, output signal, which is output to peripheral circuit, to be carried out Processing, makes imaging sensor be in low light sensing mode or middle light sensing mode or high light sensing mode.
7. according to the method described in claim 6, it is characterized in that, the signal-obtaining transistor exports the pixel unit chosen In the output signal of photosensitive unit include:
The corresponding signal-obtaining transistor of different subpixel has separate gating signal, to parallel according to illumination condition Several sub-pixels in each sub-pixel group are opened, so that imaging sensor is in low light sensing mode or middle light sensing mode, successively Export the output signal of photosensitive unit in the sub-pixel of several unlatchings;Alternatively, each to be opened parallel according to illumination condition All sub-pixels in sub-pixel group make imaging sensor be in high light sensing mode, while exporting photosensitive list in each sub-pixel The output signal of member.
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