CN104219466B - A kind of NMOS line scan image sensors with subsection integral reading circuit - Google Patents
A kind of NMOS line scan image sensors with subsection integral reading circuit Download PDFInfo
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- CN104219466B CN104219466B CN201410440643.8A CN201410440643A CN104219466B CN 104219466 B CN104219466 B CN 104219466B CN 201410440643 A CN201410440643 A CN 201410440643A CN 104219466 B CN104219466 B CN 104219466B
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Abstract
The present invention relates to a kind of NMOS line scan image sensors with subsection integral reading circuit, output signal is connected by a gating switch with video signal cable；Bias voltage is connected by series resistance with output signal end；During the sense switch conducting of some pixel, if corresponding gating switch turns off, circuit is in open-circuit condition, and the signal in pixel cannot export to signal output part, bias voltage and cannot carry out charging reset to imaging sensor internal circuit；If gating switch turns on, the signal in pixel can export to signal output part, bias voltage and can carry out charging reset to imaging sensor.The present invention can realize that different pixels integrate input optical signal with the different times of integration, that is, subsection integral function.
Description
Technical field
The present invention relates to NMOS line scan image sensors, more particularly to a kind of NMOS lines with subsection integral reading circuit
Array image sensor.
Background technology
The universal product of NMOS line scan image sensors (uses existing common driving method) at work, once reads
In operation, the signal of all pixels can only be disposably read, the time of integration of all pixels is identical.Fig. 1, Fig. 2 show one
The read-out principle of signal charge in pixel.It is all in the readout of one frame image data of NMOS line scan image sensors
Pixel is under the control of exterior driving pulse and internal logic circuit, and the correspondence sense switch of each pixel sequentially turns on, pixel
In view data be also what is sequential read out, the signal of all pixels appears in output signal end successively.During reading,
External bias voltage also recharges photodiode, and photodiode resets.The general production of NMOS line scan image sensors
In product, external drive signal cannot directly control being switched on or off for sense switch, i.e. external drive signal cannot be directly to list
A pixel is operated, and can only disposably read the view data of all pixels.It is thus impossible to realize the function of subsection integral.
In order to realize the subsection integral function of NMOS line scan image sensors, it is necessary to change the hardware configuration of sensor, make
Each pixel can be carried out individually operated, such as reset, signal reading by obtaining external circuit.Change the hardware configuration of sensor,
Need to increase extra address circuit in the control circuit of sensor, and address wire pin drawn in the encapsulation of sensor,
The quantity of address wire pin is at least log2N, wherein N are the quantity of sensor pixels.For example, in European Space Agency's environmental satellite
Atmosphere drawing scanning imagery absorption spectrum instrument (SCIAMACHY, the Scanning Imaging carried on ENVISAT
Absorption spectroMeter for Atmospheric CartograpHY) in the Canadian EG＆G that uses
The RL 1204SR of Reticon companies production, pass through the address circuit of sensor pixels, it is possible to achieve to the random read take of pixel,
Different pixels can be made in difference according to the power (difference for there are several orders of magnitude) of different pixel incident lights on same sensor
The time of integration under work.
But the customization of NMOS line scan image sensors, of high cost, production life cycle length, due to not being the universal product, product
Reliability be also required to carry out extra examination and verification.
The content of the invention
The invention solves technical problem of the prior art, there is provided a kind of NMOS lines with subsection integral reading circuit
Array image sensor.
In order to solve the above-mentioned technical problem, technical scheme is specific as follows：
A kind of NMOS line scan image sensors with subsection integral reading circuit, output signal pass through a gating switch
It is connected with video signal cable；Bias voltage is connected by series resistance with output signal end；
During the sense switch conducting of some pixel, if corresponding gating switch turns off, circuit is in open-circuit condition, pixel
In signal cannot export to signal output part, bias voltage and cannot carry out charging reset to imaging sensor internal circuit；Such as
Fruit gating switch turns on, and the signal in pixel can export to signal output part, bias voltage and imaging sensor can be carried out
Charging resets.
In the above-mentioned technical solutions, the conducting of the gating switch passes through gate pulse Φ with off stateselectTo control
System.
In the above-mentioned technical solutions, the gating switch for voltage controlled switch device.
The present invention has following beneficial effect：
The NMOS line scan image sensors with subsection integral reading circuit of the present invention：
1) it is easily achieved, it is not necessary to change the hardware configuration of sensor, it is only necessary to the reading circuit of imaging sensor
Simple change is done in universal design, it becomes possible to imaging sensor is had the function of subsection integral；
2) it is convenient, flexible, in one frame data of imaging sensor the time of integration of different pixels can arbitrarily set, different pictures
Position of the size of first time of integration with pixel on the image sensor is unrelated；
3) cost is low, and reliability is high, on the basis of common NMOS line scan image sensors, it is not necessary to change sensor sheet
The hardware of body；
4) function is strong, and the light of different time of integration pixels integration will not influence each other with reading, the identical time of integration it is more
Group pixel can be read simultaneously；
5) applied widely, this method is not only applicable to NMOS line scan image sensors, is also applied for other using similar
The line scan image sensor of driving method.
The present invention the NMOS line scan image sensors with subsection integral reading circuit on the basis of universal product,
Pass through the special designing of the exterior reading circuit to line scan image sensor so that in a frame readout interval, each pixel
Whether read and can be controlled with resetting by external drive signal, with driving sequence fit, it is possible to achieve different pixels
Input optical signal is integrated with the different times of integration, that is, subsection integral function.The NMOS linear array images of the present invention
Sensor need not change the internal structure of imaging sensor itself, and cost is low, it is easy to accomplish, function is strong.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is NMOS line scan image sensor reading circuit principle schematics.
Fig. 2 is NMOS line scan image sensor charge signal read-out principle schematic diagrames.
Fig. 3 is the signal with the reading circuit of subsection integral in the NMOS line scan image sensors of the present invention
Figure.
Embodiment
The present invention invention thought be：
The key point of the present invention is the exterior reading circuit by varying NMOS line scan image sensors, realizes that image passes
The subsection integral function of sensor pixel.The present invention is connected by that will export signal with video signal cable by a gating switch,
Realize control whether external drive signal reads sensor pixels signal.Within a frame period of imaging sensor,
Under the action of exterior driving pulse sequential, the corresponding sense switch of each pixel sequentially turns on, but passes through gate pulse
ΦselectConducting and the off state of gating switch are controlled, controls whether the electric charge of pixel is output to signal output part and resets,
To realize that the selectivity of imaging sensor pixel signal is read with resetting.
The present invention is described in detail below in conjunction with the accompanying drawings.
The NMOS line scan image sensors with subsection integral reading circuit of the present invention, by being passed to NMOS linear array images
The exterior reading circuit of sensor and the design of driving pulse sequence, realize the subsection integral function of sensor.
The present invention connects one with pulse control in the reading circuit outside imaging sensor on vision signal output line
The switch of system, it is possible to achieve the selectivity of signal charge is read in pixel, as shown in Figure 3.
Fig. 3 show the reading circuit in the NMOS line scan image sensors with subsection integral reading circuit of the present invention
Principle schematic, is with the difference of the common reading circuit principle shown in Fig. 1, in Fig. 3, output signal it is not direct with
Video signal cable connects, but is connected by a gating switch with video signal cable.Bias voltage by series resistance with it is defeated
Go out signal end connection.When gating switch turns off, circuit is in open-circuit condition, and bias voltage cannot be to imaging sensor internal circuit
Carry out charging reset.When gating switch turns on, the resistance of gating switch itself can be ignored, and bias voltage can be as shown in Figure 1
Circuit carries out charging reset to imaging sensor like that.Gate pulse ΦselectFor controlling conducting and the shut-off shape of gating switch
State.Gating switch requires conducting resistance as far as possible small, and resistance is as far as possible big during shut-off, and gating switch is voltage controlled switch device
Part, and require higher switching frequency (being more than 1MHz).
In a frame readout interval of imaging sensor, under the action of exterior driving pulse sequential, all pixels pair
The sense switch answered sequentially turns on.If necessary to export the signal of some pixel, then in the corresponding sense switch conducting of the pixel
While, pass through gate pulse ΦselectGating switch conducting is controlled, vision signal appears in output signal end, while pixel is answered
Position；If the signal of some pixel need not export, while the pixel corresponding sense switch conducting, gating switch is still
It is held off, bias voltage can not reset the pixel, and the charge signal of the pixel remains unchanged, and can continue to entering
Optical signal is penetrated to be integrated.
In subsection integral principle schematic shown in Fig. 3, the work of the sense switches of all pixels in exterior driving pulse sequential
Sequentially turned under, but whether the signal in pixel reads also to be subject to gating switch ΦselectControl.Therefore, read in a frame
Go out in the cycle, some pixels can be selected to read, the signal in pixel resets, and other pixel is not read, can continue into
Row integration.Using multiple frame readout intervals, and as needed in different frame readout intervals control pixel it is corresponding in signal
Whether read, so as to fulfill the different values of the time of integration of different pixels.Moreover, the time of integration of different pixels is from pixel
The influence of position, can arbitrarily specify in allowed band.
The present invention's thes improvement is that when exterior reading circuit designs, and one is designed on the video output cable of sensor
A gating switch, gating switch are controlled by gate pulse, and the on, off by controlling gating switch is realized to video in pixel
Whether signal needs the independent control read, so as to fulfill the function of subsection integral.This method realizes subsection integral function, advantage
It is, simply, it is easy to accomplish, it is not necessary to change the hardware configuration of sensor itself, cost is low, and reliability is high.Meanwhile should
Methodological function is strong, and when realizing subsection integral, the time of integration of different pixels can freely specify, and not limited be subject to monotonicity.
Obviously, the above embodiments are merely examples for clarifying the description, and the restriction not to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (2)
- A kind of 1. NMOS line scan image sensors with subsection integral reading circuit, it is characterised in thatOutput signal is connected by a gating switch with video signal cable；Bias voltage passes through series resistance and output signal end Connection；During the sense switch conducting of some pixel, if corresponding gating switch turns off, circuit is in open-circuit condition, in pixel Signal, which cannot be exported to signal output part, bias voltage, to carry out charging reset to imaging sensor internal circuit；If choosing Logical switch conduction, the signal in pixel can be exported to signal output part, bias voltage and can charged to imaging sensor Reset；The conducting of the gating switch passes through gate pulse Φ with off stateselectTo control.
- 2. the NMOS line scan image sensors according to claim 1 with subsection integral reading circuit, it is characterised in that The gating switch for voltage controlled switch device.
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| CN201410440643.8A CN104219466B (en) | 2014-08-30 | 2014-08-30 | A kind of NMOS line scan image sensors with subsection integral reading circuit |
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| CN201410440643.8A CN104219466B (en) | 2014-08-30 | 2014-08-30 | A kind of NMOS line scan image sensors with subsection integral reading circuit |
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| CN104219466B true CN104219466B (en) | 2018-04-27 |
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| CN106791511B (en) * | 2016-11-25 | 2019-07-05 | 华东师范大学 | A kind of photodetection double mode reading circuit |
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| US6175383B1 (en) * | 1996-11-07 | 2001-01-16 | California Institute Of Technology | Method and apparatus of high dynamic range image sensor with individual pixel reset |
| WO2012047057A2 (en) * | 2010-10-08 | 2012-04-12 | 주식회사 지안 | Cmos image sensor having wide dynamic range and image sensing method |
| CN202261579U (en) * | 2011-08-31 | 2012-05-30 | 北京工业大学 | Integration-time-adjustable transport driver interface-charge coupled device (TDI-CCD) driving circuit |
| CN102523392A (en) * | 2011-12-29 | 2012-06-27 | 天津大学 | Circuit capable of improving dynamic range of image sensor and control method thereof |
| CN103685992A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Method for generating high dynamic range image and image sensor |
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2014
- 2014-08-30 CN CN201410440643.8A patent/CN104219466B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175383B1 (en) * | 1996-11-07 | 2001-01-16 | California Institute Of Technology | Method and apparatus of high dynamic range image sensor with individual pixel reset |
| WO2012047057A2 (en) * | 2010-10-08 | 2012-04-12 | 주식회사 지안 | Cmos image sensor having wide dynamic range and image sensing method |
| CN202261579U (en) * | 2011-08-31 | 2012-05-30 | 北京工业大学 | Integration-time-adjustable transport driver interface-charge coupled device (TDI-CCD) driving circuit |
| CN102523392A (en) * | 2011-12-29 | 2012-06-27 | 天津大学 | Circuit capable of improving dynamic range of image sensor and control method thereof |
| CN103685992A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Method for generating high dynamic range image and image sensor |
Non-Patent Citations (1)
| Title |
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| NMOS线阵探测器信号处理电路与驱动时序设计;张佩杰，宋克非;《中国空间科学学会年空间光学与机电技术研讨会》;20131231;第411-第416 * |
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