CN103685992A - Method for generating high dynamic range image and image sensor - Google Patents
Method for generating high dynamic range image and image sensor Download PDFInfo
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Abstract
The invention discloses a method for generating a high dynamic range image and an image sensor. The image sensor comprises a plurality of pixel units with binning and dividing modes, and switch control circuits. Each pixel unit comprises a plurality of sub pixel groups arranged irregularly, and each sub pixel group comprises a plurality of sub pixels. One switch control circuit is arranged for each sub pixel group and is used for enabling different numbers of sub pixels of each sub pixel group according to light conditions under the same exposure time, so that the image sensor is enabled to be in low-sensitization mode, medium-sensitization mode and high-sensitization mode, and the output signals of sensitization units in the enabled sub pixels are output, a low-sensitization image, a medium-sensitization image and a high-sensitization image are generated according to the output signals under different sensitization modes, hereby a high-definition dynamic range image is generated. The high-definition dynamic range image under the same exposure time is generated, the contradiction of sensitivity, dynamic range and image sensor area is avoided, and the moire fringe is also eliminated.
Description
Technical field
The invention belongs to field of image sensors, specifically, relate to a kind of method and imageing sensor that generates high dynamic range images.
Background technology
Imageing sensor is the important component part of camera.Traditional camera has been used different imageing sensors from modern digital cameras.The imageing sensor that traditional camera is used is to realize by film, and the imageing sensor that modern digital cameras is used is by cmos image sensor (CMOS IMAGE SENSOR, hereinafter to be referred as CIS) or charging coupled apparatus (Charge-coupled Device, C/C for short D) realize.
For traditional camera, film can be divided into black and white film and color film.But, the film of which kind of type no matter, it generally all comprises two elements: the support of the sensitive emulsion layer of a single or multiple lift, a sensitive emulsion layer is sheet base.Sensitive emulsion layer is made by emulsion, and emulsion is actually by the random photosensitive subparticle that suspends in gelatin medium and forms.Conventionally, the material of light activated subparticle is silver halide particle.
For the digital camera that uses CCD device as imageing sensor, at professional scientific research and industrial circle, the CCD with high s/n ratio becomes first-selection; In high-end photography and vedio recording field, can provide the CCD of high image quality also quite to be favored.Digital camera for using CIS device as imageing sensor, is widely applied at IP Camera and mobile phone photograph module., aspect picture quality, CCD may be better than CIS.But along with improving constantly of CIS technology, the picture quality of a part of CIS is close to the CCD of same specification.
High dynamic range images (High-Dynamic Range is called for short HDR) is compared common image, and more dynamic range and image detail can be provided, and therefore, in more current high-end cameras and mobile phone (as iPhone), is all widely applied.In the prior art, in order to realize HDR, normally in different exposure time, form different low-dynamic range (Low-Dynamic Range is called for short LDR) image.Afterwards, utilize the LDR image of each corresponding best details of time for exposure to synthesize final HDR image, thus the visual effect in reflection people true environment.
But, in the modern digital cameras based on CMOS, there is following technical problem:
(1) between sensitivity and dynamic range, image area sensor, there is contradiction
For a pixel cell, if the area of this pixel is larger, will there is comparatively outstanding sensitivity and higher dynamic range.Therefore, at anti-, micro-single, the high-definition monitoring of current list etc., use in the equipment of high-end cmos image sensor, conventionally adopt the front photograph technology with larger pixel to realize.But, in order to make the size decreases of imageing sensor, must adopt as far as possible little pixel cell again.Therefore, sensitivity and compared with having contradiction between dynamic range, image sensor pixel size.
(2) no matter being CIS or CCD, all there will be Moire fringe, there is contradiction in Moire fringe and resolution
Moire fringe is the visual results interfering with constant angle and frequency between two lines or two objects.When human eye cannot be differentiated these two lines or two objects, can only see the decorative pattern of interference, this optical phenomena is exactly Moire fringe.
In traditional camera,, therefore, when adopting film sensor shot object, even if object is comprised of regular lines or figure, can there is not Moire fringe in the randomness because light activated subparticle suspends yet.
Figure 13 is the planar alignment mode schematic diagram of CIS or ccd image sensor in prior art; Figure 14 is the Moire fringe schematic diagram occurring in prior art; As shown in figure 13, because its pixel adopts regularly arranged formation conventionally, therefore, when taking the object being formed by regular streaks or figure, conventionally there will be Moire fringe, as shown in figure 14.
Analyze the reason that Moire fringe occurs, it is in fact because sample of signal frequency approaches due to photoreceptor resolution.Therefore,, for fear of Moire fringe, the method conventionally adopting is with a low pass filter, the signal higher than photoreceptor resolution to be filtered out.But the existence of low pass filter has reduced again the resolution of imageing sensor imaging.Therefore, between resolution and Moire fringe, conventionally there is contradiction.
(3) in order to obtain HDR image, need to be set separately the different time for exposure
As previously mentioned, in prior art, in order to obtain final HDR image, need to, in different exposure time, form different low-dynamic range (Low-Dynamic Range is called for short LDR) image and synthesize final HDR image at the LDR image of selecting best details.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method and imageing sensor that generates high dynamic range images.
In order to solve the problems of the technologies described above, the invention provides a kind of imageing sensor that generates high dynamic range images, it comprises pixel cell and ON-OFF control circuit that several have merge and split pattern; Wherein: each pixel cell comprises several sub-pixel groups of irregular alignment, and each sub-pixel group comprises several sub-pixels; ON-OFF control circuit described in arranging one for each sub-pixel group, for under the same time for exposure, according to illumination condition, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern, the output signal of photosensitive unit in sub-pixel is opened in output, according to the output signal under different sensitization patterns, generates low bearing member, image, middle bearing member, image, high bearing member, image and generates accordingly high definition dynamic image.
Preferably, in one embodiment of this invention, arranging of described pixel cell adopts bayer pattern, and each pixel cell comprises a red sub-pixel group, two yellow sub-pixel groups, a blue subpixels group.
Preferably, in one embodiment of this invention, described ON-OFF control circuit comprises signal-obtaining transistor, selects transistor, reset transistor, source electrode to follow transistor, wherein, the photosensitive unit that described in signal-obtaining transistor AND gate, in sub-pixel group, each sub-pixel is corresponding connects, for reading the output signal of each photosensitive unit; Select transistor to be used for choosing a pixel cell, reset transistor is for resetting to the output signal of reading, follow transistor for the output signal of reading is outputed to selection transistor, when described selection transistor selection, output signal is outputed to peripheral circuit and process, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern.
Preferably, in one embodiment of this invention, signal-obtaining transistor corresponding to different subpixel has separately independently gating signal, in order to walk abreast and to open several sub-pixels in each sub-pixel group according to illumination condition, make imageing sensor in low sensitization pattern or middle sensitization pattern, export successively the output signal of photosensitive unit in the sub-pixel of several unlatchings; Or, in order to according to the parallel all sub-pixels opened in each sub-pixel group of illumination condition, make imageing sensor in high sensitization pattern, export the output signal of photosensitive unit in each sub-pixel simultaneously.
In order to solve the problems of the technologies described above, the present invention also provides a kind of method of utilizing above-mentioned imageing sensor to generate high dynamic range images, and it comprises:
Step 1, under the same time for exposure, according to illumination condition ON-OFF control circuit, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern;
The output signal that photosensitive unit in sub-pixel is opened in step 2, output;
Step 3, according to the output signal under different sensitization patterns, generate low bearing member, image, middle bearing member, image, high bearing member, image and generate accordingly high definition dynamic image.
Preferably, in one embodiment of this invention, described step 1 comprises:
Selection transistor in ON-OFF control circuit is strobed to choose a pixel cell;
Signal-obtaining transistor is exported the output signal of photosensitive unit in the pixel cell of choosing and by reset transistor, the output signal of reading is resetted successively;
Follow transistor for the output signal of reading is outputed to selection transistor, so that output signal is outputed to peripheral circuit, process, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern.
Preferably, in one embodiment of this invention, the output signal of the photosensitive unit in the pixel cell that described signal-obtaining transistor output is chosen comprises:
Signal-obtaining transistor corresponding to different subpixel has separately independently gating signal, in order to walk abreast and to open several sub-pixels in each sub-pixel group according to illumination condition, make imageing sensor in low sensitization pattern or middle sensitization pattern, export successively the output signal of photosensitive unit in the sub-pixel of several unlatchings; Or, in order to according to the parallel all sub-pixels opened in each sub-pixel group of illumination condition, make imageing sensor in high sensitization pattern, export the output signal of photosensitive unit in each sub-pixel simultaneously.
Compare with existing scheme, in the present invention, imageing sensor comprises pixel cell and the ON-OFF control circuit that several have merge and split pattern.Each pixel cell comprises several sub-pixel groups of irregular alignment, and each sub-pixel group comprises several sub-pixels.ON-OFF control circuit described in arranging one for each sub-pixel group, for under the same time for exposure, according to illumination condition, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern, the output signal of photosensitive unit in sub-pixel is opened in output, according to the output signal under different sensitization patterns, generate low bearing member, image, middle bearing member, image, high bearing member, image also generates high definition dynamic image accordingly, under the same time for exposure, realized the generation of high definition dynamic image, in addition, sensitivity and dynamic range have also been avoided, contradiction between image area sensor, eliminated Moire fringe.
Accompanying drawing explanation
Fig. 1 is the floor map of imageing sensor in the embodiment of the present invention one;
Fig. 2 is the structural representation of ON-OFF control circuit in the embodiment of the present invention two;
Fig. 3 is the control sequential of imageing sensor in low sensitization pattern in the embodiment of the present invention;
Fig. 4 is the image sensor plane schematic diagram under low sensitization pattern in the embodiment of the present invention.
Fig. 5 is the control sequential of imageing sensor in middle sensitization pattern in the embodiment of the present invention;
Fig. 6 is the image sensor plane schematic diagram under middle sensitization pattern in the embodiment of the present invention;
Fig. 7 is the control sequential of imageing sensor in high sensitization pattern in the embodiment of the present invention;
Fig. 8 generates the method flow diagram of high dynamic range images in the embodiment of the present invention;
Shown in Fig. 9-Figure 12, be respectively low bearing member, image, middle bearing member, image, high bearing member, image and the synthetic high dynamic range images of the technical scheme acquisition of application the above embodiment of the present invention;
Figure 13 is the planar alignment mode schematic diagram of CIS or ccd image sensor in prior art;
Figure 14 is the Moire fringe schematic diagram occurring in prior art.
Embodiment
Below will coordinate graphic and embodiment to describe embodiments of the present invention in detail, and by this present invention's implementation procedure how application technology means solve technical problem and reach technology effect can be fully understood and be implemented according to this.
In following embodiment of the present invention, imageing sensor comprises pixel cell and the ON-OFF control circuit that several have merge and split pattern.Each pixel cell comprises several sub-pixel groups of irregular alignment, and each sub-pixel group comprises several sub-pixels.ON-OFF control circuit described in arranging one for each sub-pixel group, for under the same time for exposure, according to illumination condition, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern, the output signal of photosensitive unit in sub-pixel is opened in output, according to the output signal under different sensitization patterns, generate low bearing member, image, middle bearing member, image, high bearing member, image also generates high definition dynamic image accordingly, under the same time for exposure, realized the generation of high definition dynamic image, in addition, sensitivity and dynamic range have also been avoided, the contradiction of image area sensor, eliminated Moire fringe.
Fig. 1 is the floor map of imageing sensor in the embodiment of the present invention one; As shown in Figure 1, it comprises several pixel cells with merge and split pattern 101, and each pixel cell comprises several sub-pixel groups of irregular alignment, and each sub-pixel group comprises several sub-pixels.
In the present embodiment, in Fig. 1, only simply illustrated a pixel cell 101, it is example that the arranging of described pixel cell 101 of take adopts bayer pattern, and each pixel cell 101 comprises a red sub-pixel group 111, two green sub-pixels groups 121, a blue subpixels group 131.
Alternately, pixel cell 101 is also not limited to bayer pattern, also can adopt other patterns.In addition, pixel cell 101 is also not limited to the three primary colors based on RGB, also can adopt other as CMMY tetra-looks.Repeat no more in detail.
In the present embodiment, described red sub-pixel group 111 comprises three red sub-pixel 1111, and each green sub-pixels group 121 comprises three green sub-pixels 1211, and blue subpixels group 131 comprises three blue subpixels 1311.Therefore, a pixel cell 101 comprises 3 red sub-pixel, 6 green sub-pixels, 3 blue subpixels, amounts to 12 sub-pixels.
Alternately, the sub-pixel number in each sub-pixel group is not limited to three, also can be greater or less than three, as long as can realize division of the present invention and merging patterns.
In the present embodiment, be expert at and row between, between row and row, adopted the arrangement mode misplacing, such as 1/2 the sub-pixel distance that misplaces respectively, avoided the regularly arranged of pixel in imageing sensor.When taking regular lines or figure, regular lines or figure cannot produce interference effect with the pel array of irregular alignment in imageing sensor, thereby have effectively eliminated the generation of Moire fringe.
Only take the condition of illumination as high light and the low light level below, the photosensitive area of a certain single pixel cell in imageing sensor of the present invention and the photosensitive area of prior art are done to one simply to be compared, to illustrate that imageing sensor of the present invention is due to larger photosensitive area, thereby can realize the shooting of high dynamic range images.
Under high light condition, red sub-pixel group (R1/R2/R3), green sub-pixels group (G1/G2/G3), green sub-pixels (G5/G6/G7), blue subpixels group (B1/B2/B3) can be used as 3 pixels respectively.If the photosensitive area of each sub-pixel is s, under high light, a set of pixel cell of this imageing sensor has 12 sub-pixels so, and photosensitive area can reach 12s.
Under low light condition, red sub-pixel group R1/R2/R3 can be used as 1 red pixel R and uses, green sub-pixels group (G1/G2/G3) is used as 1 green pixel Ga, green sub-pixels group (G4/G5/G6) can be used as other 1 green pixel Gb and uses, and blue word pixel groups (B1/B2/B3) is also used as 1 green pixel B.If each sub-pixel area is s, under the low light level, there are 4 pixels so, each pixel consists of 3 sub-pixels, photosensitive area is 3s, be existing in 3 times an of pixel point areas.This pixel cell is compared with pixel cell of the prior art, has higher dynamic range and sensitivity, has good image appearance power under the low light level.
In order to realize the low middle high sensitization pattern of imageing sensor in the present embodiment, ON-OFF control circuit (not shown) described in arranging one for each sub-pixel group 101, for under the same time for exposure, according to illumination condition, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern, the output signal of photosensitive unit in sub-pixel is opened in output, according to the output signal under different sensitization patterns, generate low bearing member, image, middle bearing member, image, high bearing member, image also generates high definition dynamic image accordingly.
Because a pixel cell comprises a red sub-pixel group 111, two green sub-pixels groups 121, a blue subpixels group 131, simultaneously, described red sub-pixel group 111 comprises three red sub-pixel 1111(R1R2R3), each green sub-pixels group 121 comprises three green sub-pixels (G1G2G3/G4G5G6), and blue subpixels group 131 comprises three blue subpixels 1311(B1B2B3).Therefore, in order to realize division and the merging patterns of imageing sensor, giving each sub-pixel group is that red sub-pixel group 111, green sub-pixels group 121, blue subpixels group 131 all need to configure an ON-OFF control circuit, to control the unlatching of a few sub-pixels wherein or to close.
Fig. 2 is the structural representation of ON-OFF control circuit in the embodiment of the present invention two, as shown in Figure 2, ON-OFF control circuit comprises signal-obtaining transistor 201, selects transistor 202, reset transistor 203, follows transistor 204, wherein, the photosensitive unit 205 that signal-obtaining transistor 201 is corresponding with each sub-pixel in described sub-pixel group connects, for reading the output signal of photosensitive unit 205; Select transistor 202 for choosing a pixel cell, reset transistor 203 is for resetting to the output signal of reading, follow transistor 204 and select transistor 202 for the output signal of reading is outputed to, when described selection transistor 202 gating, output signal is outputed to peripheral circuit and process, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern.
Because each sub-pixel group is such as red sub-pixel group comprises three red sub-pixel, corresponding just exists three photosensitive units 205 as light sensitive diode.In order separately each photosensitive unit 204 to be operated, each photosensitive unit 204 is all connected with a signal-obtaining transistor 201, the grid end of each signal-obtaining transistor 201 is connected with a gating signal TXi, when gating signal TXi sets high, this signal-obtaining transistor 201 is open-minded, exports the output signal of corresponding photosensitive unit 205.In order to choose a certain pixel cell, select the grid end of transistor 202 to be connected with a selected signal ROW, when this selected signal ROW sets high, choose corresponding pixel cell.In order to reset, the grid end of reset transistor 203 is connected with a reset signal RX, and when this reset signal RX sets high, reset transistor 203 conductings, make the current potential that P is ordered be drawn high Vdd, thereby the electric charge that P is ordered empty reset.Follow transistor 204 for the output signal of photosensitive unit 205 is outputed to source from its grid end.
The annexation of ON-OFF control circuit all parts is as follows:
The source of signal-obtaining transistor 201 is connected with the output of photosensitive unit 205; The grid end of signal-obtaining transistor 201 is connected with gating signal TXi; The drain terminal of signal-obtaining transistor 201 is connected with the source of reset transistor 203.
Select the grid end of transistor 202 to be connected with a selected signal ROW, drain terminal is connected with the source 204 of following transistor 204, and source is as output; Select the source of transistor 202 to be connected with a tail current Vs.
The grid end of reset transistor 203 is connected with a reset signal RX, and source is connected with the grid end of following transistor 204, and drain terminal is connected with voltage Vdd.
The grid end of following transistor 204 is connected with the source of reset transistor 203, and source is connected with choosing the drain terminal of transistor 202, and drain terminal is connected with voltage VDD.
In domain structure layout, for red pixel sub-pixel group (R1/R2/R3) region, the corresponding photosensitive unit of each The Scarlet Letter pixel, all crystals pipe in ON-OFF control circuit is all positioned at the regional center position of these three red sub-pixel, as shown in the stain region in Fig. 1.The laying out pattern of green sub-pixels group G1/G2/G3, green sub-pixels G4/G5/G6, blue subpixels B1/B2/B3 is consistent with red sub-pixel laying out pattern, does not repeat them here.
To carry out brief description to utilizing above-mentioned ON-OFF control circuit to realize the low sensitization pattern of imageing sensor, middle sensitization pattern, high sensitization pattern below:
Signal-obtaining transistor 201 corresponding to different subpixel has separately independently gating signal, according to parallel several sub-pixels opened in each sub-pixel group of illumination condition, make imageing sensor in low sensitization pattern or middle sensitization pattern, export successively the output signal of photosensitive unit in the sub-pixel of several unlatchings;
Signal-obtaining transistor 201 corresponding to different subpixel walks abreast and opens all sub-pixels in each sub-pixel group according to illumination condition, makes imageing sensor in high sensitization pattern, exports the output signal of photosensitive unit in each sub-pixel simultaneously.
To be elaborated to utilizing above-mentioned ON-OFF control circuit to realize the low sensitization pattern of imageing sensor, middle sensitization pattern, high sensitization pattern below:
(1) make imageing sensor work in low sensitization pattern
Take Fig. 2 as example, can define while only opening a sub-pixel in each sub-pixel, imageing sensor is in low sensitization pattern,
As shown in Figure 2, selected signal ROW sets high, and selects transistor 202 open-minded, chooses a certain pixel cell.
By controlling setting high of gating signal TXi, the output signal of the signal-obtaining transistor 201 corresponding photosensitive units 205 that connect is transferred to P point.Such as, when TX1 sets high and TX2/TX3 while setting low, the output signal of first photosensitive unit 205 transfers to P point.Equally, when TX2 sets high and TX1/TX3/ while setting low, the output signal of second photosensitive unit 205 transfers to P point; When TX3 sets high and TX1/TX2 while setting low, the output signal of the 3rd photosensitive unit 205 transfers to P point.
When reset signal RX sets high, reset transistor 203 conductings, P point is connected with VDD, and P point charge is emptied and resetted; Follow transistor 204 conductings, the signal that P is ordered outputs to source from its grid end, and outputs to OUT through gate transistor 202.
Fig. 3 is the control sequential of imageing sensor in low sensitization pattern in the embodiment of the present invention, and Fig. 4 is the image sensor plane schematic diagram under low sensitization pattern in the embodiment of the present invention.In conjunction with physical circuit shown in Fig. 3 and Fig. 2, illustrate, output signal how only to export a photosensitive unit 205 in sub-pixel group realizes the low sensitization pattern of imageing sensor, and the output signal of exporting the 3rd photosensitive unit 205 of take is example:
In the T1 period, export the output signal of the 3rd photosensitive unit 205: reset signal RX sets high, reset transistor 203 is open-minded, P point is connected with VDD, P point charge is emptied and resetted, then reset signal RX sets low, and the 3rd set high/first gating signal TX1 of gating signal TX3 and second gating signal TX2 set low, and now the output signal of the 3rd photosensitive unit 205 transfers to P point.
The output signal of each photosensitive unit 205 is transferred to after P point, follows transistor 204 conductings, and because of selected signal, ROW sets high, and therefore also conducting of gate transistor 202, can be transferred to corresponding output signal OUT end.
In the control sequential shown in above-mentioned Fig. 3:
The time that RX signal is placed in high level is 1us～64us, preferably 4us;
The time that TX3 signal is placed in high level is 1us～64us, preferably 5us;
ROW rising edge and RX signal rising time are spaced apart 1us～5us, preferably 2us;
RX trailing edge and TX3 signal rising time are spaced apart 1us～20us, preferably 5us;
TX3 signal trailing edge and the ROW trailing edge time interval are 5～40us, preferably 15us.
In whole above-mentioned example procedure, gating signal TX1, the gating signal TX2 signal of first photosensitive unit 205, second photosensitive unit 205 are always low, the output signal that has guaranteed first photosensitive unit 205, second photosensitive unit 205 is not read out, and is that its corresponding sub-pixel does not work to picture shooting now yet.
It should be noted that, in above-mentioned example, the output signal of exporting the 3rd photosensitive unit 205 of take is example, and how imageing sensor is operated under low sensitization pattern and is schematically illustrated.Certainly, also can select any one in other two photosensitive units to realize the low sensitization pattern of imageing sensor.
(2) make imageing sensor work in middle sensitization pattern
Fig. 5 is the control sequential of imageing sensor in middle sensitization pattern in the embodiment of the present invention, and Fig. 6 is the image sensor plane schematic diagram under middle sensitization pattern in the embodiment of the present invention.In conjunction with physical circuit shown in Fig. 5, Fig. 6 and Fig. 2, illustrate that the output signal of how only exporting certain two photosensitive unit 205 in sub-pixel group realizes the middle sensitization pattern of imageing sensor, the output signal of exporting first photosensitive unit 205 and second photosensitive unit 205 of take is example:
2 small pixel of sub-pixel group merge becomes 1 large pixel use.
In the T1 period, gating signal TX1/TX2 signal is merged into a signal TX and uses, be that gating signal TX1/TX2 sets high simultaneously, and gating signal TX3 set low, and only has the output signal of first photosensitive unit 205 and second photosensitive unit 205 to transfer to P point simultaneously.
The output signal of first and second photosensitive unit 205 is transferred to after P point, follows transistor 204 conductings, and because of selected signal, ROW sets high, and therefore also conducting of gate transistor 202, can be transferred to corresponding output signal OUT and hold.
In whole above-mentioned example procedure, first photosensitive unit 205, second photosensitive unit 205, the gating signal TX1 of PD2, gating signal TX2 signal are always high, the output signal that has guaranteed first photosensitive unit 205, second photosensitive unit 205 is read, and the gating signal TX3 of the 3rd photosensitive unit 205 sets low, corresponding sub-pixel does not work to picture shooting now.
It should be noted that, in above-mentioned example, the output signal of exporting first and two photosensitive units 205 of take is example, and how imageing sensor is operated under middle sensitization pattern and is schematically illustrated.Certainly, also can select other any two photosensitive units to realize the low sensitization pattern of imageing sensor.
In the control sequential shown in above-mentioned Fig. 5:
The time that RX signal is placed in high level is 1us～64us, preferably 4us;
The time that TX1, TX2 signal are placed in high level is 1us～64us, preferably 5us;
ROW rising edge and RX signal rising time are spaced apart 1us～5us, preferably 2us;
RX trailing edge and TX1, TX2 signal rising time are spaced apart 1us～20us, preferably 5us;
TX1, TX2 signal trailing edge and the ROW trailing edge time interval are 5～40us, preferably 15us.
(3) make imageing sensor work in high sensitization pattern
From above-mentioned in low sensitization pattern different, 3 small pixel of sub-pixel group merge to be become 1 large pixel and uses.
Fig. 7 is the control sequential of imageing sensor in high sensitization pattern in the embodiment of the present invention, and the image sensor plane schematic diagram under high sensitization pattern as shown in Figure 1.In conjunction with physical circuit shown in Fig. 7, Fig. 1 and Fig. 2, illustrate.
In the T1 period, gating signal TX1/TX2/TX3 signal is merged into a signal TX and uses, and gating signal TX1/TX2/TX3 sets high simultaneously, and the output signal of three photosensitive units 205 transfers to P point simultaneously.Now, as shown in Figure 7, be the control sequential of imageing sensor in the embodiment of the present invention in merging patterns.
In the control sequential shown in above-mentioned Fig. 7:
The time that RX signal is placed in high level is 1us～64us, preferably 4us;
The time that TX1, TX2, TX3 signal are placed in high level is 1us～64us, preferably 5us;
ROW rising edge and RX signal rising time are spaced apart 1us～5us, preferably 2us;
RX trailing edge and TX1, TX2, TX3 signal rising time are spaced apart 1us～20us, preferably 5us;
TX1, TX2, TX3 signal trailing edge and the ROW trailing edge time interval are 5～40us, preferably 15us.
As shown in Figure 8, for generating the method flow diagram of high dynamic range images in the embodiment of the present invention, it can comprise:
The output signal that photosensitive unit in sub-pixel is opened in step 802, output;
There is the content of light step 801 and step 802 in detail can be referring to the relevant description in Fig. 1-Fig. 8.
The detailed content of step 803, those of ordinary skills can, with reference to related art, such as adopting HDR algorithm, can realize low bearing member, image, middle bearing member, image, the synthetic high definition dynamic image that generates of high bearing member, image.
Shown in Fig. 9-Figure 12, be respectively low bearing member, image, middle bearing member, image, high bearing member, image and the synthetic high dynamic range images of the technical scheme acquisition of application the above embodiment of the present invention.
Above-mentioned explanation illustrates and has described some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to disclosed form herein, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can, in invention contemplated scope described herein, by technology or the knowledge of above-mentioned instruction or association area, change.And the change that those skilled in the art carry out and variation do not depart from the spirit and scope of the present invention, all should be in the protection range of claims of the present invention.
Claims (7)
1. an imageing sensor that generates high dynamic range images, is characterized in that, comprises pixel cell and ON-OFF control circuit that several have merge and split pattern; Wherein: each pixel cell comprises several sub-pixel groups of irregular alignment, and each sub-pixel group comprises several sub-pixels; ON-OFF control circuit described in arranging one for each sub-pixel group, for under the same time for exposure, according to illumination condition, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern, the output signal of photosensitive unit in sub-pixel is opened in output, according to the output signal under different sensitization patterns, generates low bearing member, image, middle bearing member, image, high bearing member, image and generates accordingly high definition dynamic image.
2. imageing sensor according to claim 1, is characterized in that, arranging of described pixel cell adopts bayer pattern, and each pixel cell comprises a red sub-pixel group, two yellow sub-pixel groups, a blue subpixels group.
3. imageing sensor according to claim 1, it is characterized in that, described ON-OFF control circuit comprises signal-obtaining transistor, selects transistor, reset transistor, source electrode to follow transistor, wherein, the photosensitive unit that described in signal-obtaining transistor AND gate, in sub-pixel group, each sub-pixel is corresponding connects, for reading the output signal of each photosensitive unit; Select transistor to be used for choosing a pixel cell, reset transistor is for resetting to the output signal of reading, follow transistor for the output signal of reading is outputed to selection transistor, when described selection transistor selection, output signal is outputed to peripheral circuit and process, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern.
4. imageing sensor according to claim 3, it is characterized in that, signal-obtaining transistor corresponding to different subpixel has separately independently gating signal, in order to walk abreast and to open several sub-pixels in each sub-pixel group according to illumination condition, make imageing sensor in low sensitization pattern or middle sensitization pattern, export successively the output signal of photosensitive unit in the sub-pixel of several unlatchings; Or, in order to according to the parallel all sub-pixels opened in each sub-pixel group of illumination condition, make imageing sensor in high sensitization pattern, export the output signal of photosensitive unit in each sub-pixel simultaneously.
5. utilize any described imageing sensor of claim 1-4 to generate a method for high dynamic range images, it is characterized in that, comprising:
Step 1, under the same time for exposure, according to illumination condition ON-OFF control circuit, open the different numbers sub-pixel in each sub-pixel group, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern;
The output signal that photosensitive unit in sub-pixel is opened in step 2, output;
Step 3, according to the output signal under different sensitization patterns, generate low bearing member, image, middle bearing member, image, high bearing member, image and generate accordingly high definition dynamic image.
6. method according to claim 5, is characterized in that, described step 1 comprises:
Selection transistor in ON-OFF control circuit is strobed to choose a pixel cell;
The output signal of the photosensitive unit in the pixel cell that the output of signal-obtaining transistor is chosen also resets to the output signal of reading successively by reset transistor;
Follow transistor the output signal of reading is outputed to selection transistor, so that output signal is outputed to peripheral circuit, process, make imageing sensor in low sensitization pattern, middle sensitization pattern, high sensitization pattern.
7. method according to claim 6, is characterized in that, the output signal of the photosensitive unit in the pixel cell that described signal-obtaining transistor output is chosen comprises:
Signal-obtaining transistor corresponding to different subpixel has separately independently gating signal, in order to walk abreast and to open several sub-pixels in each sub-pixel group according to illumination condition, make imageing sensor in low sensitization pattern or middle sensitization pattern, export successively the output signal of photosensitive unit in the sub-pixel of several unlatchings; Or, in order to according to the parallel all sub-pixels opened in each sub-pixel group of illumination condition, make imageing sensor in high sensitization pattern, export the output signal of photosensitive unit in each sub-pixel simultaneously.
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