CN103682080B - The preparation method of a kind of local polarisation piezoelectric film sensor - Google Patents

The preparation method of a kind of local polarisation piezoelectric film sensor Download PDF

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CN103682080B
CN103682080B CN201310705532.0A CN201310705532A CN103682080B CN 103682080 B CN103682080 B CN 103682080B CN 201310705532 A CN201310705532 A CN 201310705532A CN 103682080 B CN103682080 B CN 103682080B
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film
piezoelectricity film
electrode
pvdf
piezoelectricity
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CN103682080A (en
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王自力
张宇隆
张卫方
王畏寒
方小亮
张慰
阳劲松
刘天娇
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Beihang University
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Abstract

The present invention provides the preparation method of a kind of local polarisation piezoelectric film sensor, belongs to structural health monitoring technology field. First present method prepares PZT/PVDF piezoelectricity film, then piezoelectricity film is carried out local polarisation, finally carries out the encapsulation of piezoelectric film sensor. When local polarisation, first made piezoelectricity film is carried out uniaxial extension, then on piezoelectricity film electrode coated array, each electrode by the tow sides of piezoelectricity film apply Ag films obtain, then adopt oil bath polarization method to polarize, during polarization, only apply electric field at each electrode place. Adopt preparation method provided by the present invention, it is possible to reduce sensor weight, can not self aerodynamic configuration of change of flight device, eliminate hand paste and conductor configuration Problems existing, be convenient to matrix integrated.

Description

The preparation method of a kind of local polarisation piezoelectric film sensor
Technical field
The present invention relates to the preparation method of the piezoelectric film sensor of a kind of local polarisation, belong to structural health monitoring technology field.
Background technology
Lamb wave is in the structure (such as plate) with two parallel surfaces, a kind of elastic wave being mutually coupled to form by shear wave and compressional wave. Lamb wave has good wave-guiding characteristic, and microlesion is more responsive. Damage monitoring method based on active Lamb wave is a kind of very effective monitoring method in monitoring structural health conditions. When Lamb wave is propagated in the structure, the various damages of inside configuration can cause stress concentrate, crack propagation, this can cause the scattering of Lamb wave signal and the absorption of energy propagated in the structure, by placement sensor array near damage, the Lamb wave signal received is carried out analyzing and processing, just can extract damaging diagnostic parameter. Damage monitoring based on active Lamb wave can be divided into Four processes usually: the excitation of Lamb wave, the propagation of Lamb wave, receiving and analyzing and processing to received signal of Lamb wave. Wherein Lamb wave excitation and receive all utilize piezoelectric element to realize.
Aircraft is along with the prolongation of active time, and inside configuration there will be crackle equivalent damage, causes performance degradation, affects use safety. Based on the damage monitoring method of active Lamb wave, Flight Vehicle Structure damage can be carried out Real-Time Monitoring by principle. Guarantee aircraft security, prolongation aircraft life-span and minimizing aircraft scheduled maintenance expense are significant by this. Sensor, as the core parts of Flight Vehicle Structure health monitoring systems, is in very harsh Service Environment usually, such as high/low temperature, vibration, noise etc., and sensor must lightweight, can not the aerodynamic configuration of change of flight device. But traditional piezoelectric element weight is relatively big, and hand paste and conductor configuration are all very inconvenient, can not meet aircraft to sensor light weight and the requirement that can not change self aerodynamic configuration, be not easy to structural matrix integrated.
Summary of the invention
The problem that the present invention can not meet aircraft applications require to solve existing piezoelectric transducer, it provides the preparation method of a kind of novel local polarisation piezoelectric film sensor.
The preparation method of a kind of local polarisation piezoelectric film sensor of the present invention, comprises the preparation of piezoelectricity film, the local polarisation of piezoelectricity film and the encapsulation of piezoelectric film sensor.
Wherein, piezoelectricity film is PZT/PVDF piezoelectricity film;
The local polarisation of piezoelectricity film is specifically: after the PZT/PVDF piezoelectricity film of preparation is carried out uniaxial extension, electrode coated array on piezoelectricity film, each electrode obtains by applying Ag films at the tow sides of piezoelectricity film, and adopt oil bath polarization method to polarize, when polarizing, only apply electric field at each electrode place;
The encapsulation of piezoelectric film sensor is specifically: is holed at the electrode edge place of piezoelectricity film, and uses conductive resin filling orifice, bottom electrode is caused top; Bottom electrode and top electrodes being connected by printed electronic circuit, circuit terminal is drawn by pad; Epoxy resin is evenly smeared as protective layer in piezoelectricity film both sides.
Adopt preparation method provided by the present invention, it is possible to reduce sensor weight, can not self aerodynamic configuration of change of flight device, eliminate hand paste and conductor configuration Problems existing, be convenient to matrix integrated.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the local polarisation piezoelectric film sensor preparation method of the present invention;
Fig. 2 is piezoelectricity film preparation flow figure;
Fig. 3 is piezoelectricity film local polarisation schema;
Fig. 4 is piezoelectricity thin-film package process flow diagram;
Fig. 5 is linear electrode array schematic diagram;
Fig. 6 is rectangular array electrode schematic diagram;
To be that electrode is counter draw part sectioned view to Fig. 7;
Fig. 8 is piezoelectric-array circuit connection diagram.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
As shown in Figure 1, the preparation method of local polarisation piezoelectric film sensor provided by the invention, mainly comprises the preparation of piezoelectricity film, the local polarisation of piezoelectricity film and the encapsulation of piezoelectric film sensor.
As shown in Figure 2, the present invention selects casting method to prepare piezoelectricity film, comprises step 1.1��step 1.4. Film prepares material selection PZT(Pb-based lanthanumdoped zirconate titanates) powder and PVDF(polyvinylidene difluoride (PVDF)) powder, wherein PZT grain diameter is about 3 ��m, and PVDF grain diameter is about 5 ��m.
Step 1.1, by PZT powder and the 1:1 mixing by volume of PVDF powder, is dissolved in NMP(N-methyl-2-pyrrolidone);
Step 1.2, by magnetic stirring apparatus, stirs 60min by mixture at 80 DEG C, gets a uniform mixture;
Step 1.3, leaves standstill 30min by homogeneous mixture solotion in vacuum, removes the bubble in solution, solution is poured into curtain coating ware;
Step 1.4, puts into baking oven by after curtain coating ware adjustment level, dries the obtained required PZT/PVDF piezoelectricity film of 60min at 120 DEG C. The thickness of the piezoelectricity film obtained is 80��100 ��m.
The piezoelectricity film of above-mentioned preparation does not possess piezoelectricity characteristic, only could be used as piezoelectric transducer after polarization processes.
Its whole film is all carried out by the polarization of usual piezoelectricity film, and the whole piezoelectricity film of sensor all has piezoelectricity characteristic, and the structural health monitoring technology based on lamb ripple needs to arrange that piezoelectric-array realizes, and namely needs multiple piezoelectric element. Film, in order to piezoelectric-array preset on film, is only carried out local polarisation process by the present invention, and concrete polarization flow process as shown in Figure 3, comprises step 2.1��step 2.2.
Step 2.1, carries out uniaxial extension to PZT/PVDF piezoelectricity film, and to improve the content of �� phase in PVDF, choosing draft temperature in the embodiment of the present invention is 80 DEG C, and stretch ratio is 4, and rate of extension is 100mm/min.
Step 2.2, selects oil bath polarization method to be polarized by piezoelectricity film, applies linearly according to real needs on piezoelectricity film, the electrod-array such as rectangle or ellipse, is illustrated in figure 5 linear array, is illustrated in figure 6 rectangular electrode array. Each electrode obtains by applying Ag films at the tow sides of piezoelectricity film. Upper and lower Ag films forms top silver electrode and the bottom silver electrode of electrode. The mean thickness of Ag films is 10 ��m.
Piezoelectricity film after coating Ag films being heated to 120 DEG C in silicone oil, then applies electric field at each electrode place, strength of electric field is 10kV/mm, continues polarization 40min, finally obtains having the piezoelectricity film of local polarisation piezoelectric-array. Electric field is only applied to electrode place, each local, instead of whole piezoelectricity film, the polarization position marked such as Fig. 5 and 6 and position of not polarizing.
The excellent properties such as PZT/PVDF piezoelectricity film has that volume is little, light weight, flexibility and good processability, but its thickness is less, and anti-shear ability is poor, it is thus desirable to PZT/PVDF piezoelectricity film encapsulates the weather resistance and stability that improve it. The encapsulation flow process of piezoelectricity film as shown in Figure 4, comprises step 3.1��step 3.4.
Step 3.1, cuts into desired shape by piezoelectricity film, such as circle, rectangle etc.
Step 3.2, in the boring of electrode edge place, and filling with conductive resin, bottom electrode being caused top, as shown in Figure 7, so that connecting each piezoelectric-array at piezoelectricity film with side.
Step 3.3, it is contemplated that to concrete engineering demand, the connection between piezoelectric-array is realized by the mode of printed electronic circuit, and circuit terminal is drawn by pad, and its connection diagram is as shown in Figure 8; The bottom electrode causing top is called, and bottom is counter and draws electrode, draw Electrode connection to pad by printed electronic circuit by counter to the top electrodes of each electrode and bottom.
Step 3.4; for avoiding electrode damaged; prevent outside noise from disturbing; need at piezoelectricity film coating on both sides protective layer; epoxy resin has good elasticity and insulativity, is convenient to processing, and therefore the present invention selects epoxy resin as protective layer; evenly it is applied in piezoelectricity film both sides, has at room temperature solidified.

Claims (2)

1. the preparation method of a local polarisation piezoelectric film sensor, it is characterised in that, comprising: the preparation of piezoelectricity film, the local polarisation of piezoelectricity film and the encapsulation of piezoelectric film sensor;
Wherein, preparation PZT/PVDF piezoelectricity film, PZT is Pb-based lanthanumdoped zirconate titanates, and PVDF is polyvinylidene difluoride (PVDF); The step of preparation PZT/PVDF piezoelectricity film is: step 1.1, by PZT powder and the 1:1 mixing by volume of PVDF powder, is dissolved in NMP; NMP is N-Methyl pyrrolidone; Step 1.2, by magnetic stirring apparatus, stirs 60min by mixture at 80 DEG C, gets a uniform mixture; Step 1.3, leaves standstill 30min by homogeneous mixture solotion in vacuum, removes the bubble in solution, solution is poured into curtain coating ware; Step 1.4, puts into baking oven by after curtain coating ware adjustment level, dries 60min at 120 DEG C, obtained required PZT/PVDF piezoelectricity film;
The local polarisation of piezoelectricity film specifically comprises the steps: step 2.1, and PZT/PVDF piezoelectricity film is carried out uniaxial extension, to improve the content of �� phase in PVDF; Wherein, draft temperature is 80 DEG C, and stretch ratio is 4, and rate of extension is 100mm/min; Step 2.2, electrode coated array on PZT/PVDF piezoelectricity film, each electrode obtains by applying Ag films at the tow sides of piezoelectricity film, piezoelectricity film after coating Ag films is heated to 120 DEG C in silicone oil, then electric field is applied at each electrode place, strength of electric field is 10kV/mm, continues polarization 40min, finally obtains having the piezoelectricity film of local polarisation piezoelectric-array; Front, reverse side Ag films form top silver electrode and the bottom silver electrode of electrode, and the mean thickness of Ag films is 10 ��m;
The encapsulation of piezoelectric film sensor is specifically: is holed at the electrode edge place of piezoelectricity film, and uses conductive resin filling orifice, bottom electrode is caused top; Bottom electrode and top electrodes being connected by printed electronic circuit, circuit terminal is drawn by pad; Epoxy resin is evenly smeared as protective layer in piezoelectricity film both sides.
2. the preparation method of a kind of local polarisation piezoelectric film sensor according to claim 1, it is characterised in that, the thickness of described PZT/PVDF piezoelectricity film is 80��100 ��m.
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CN106549100A (en) * 2016-10-27 2017-03-29 北京航空航天大学 A kind of preparation method of new Piezoelectric anisotropy thin film sensor
CN107300392A (en) * 2017-07-12 2017-10-27 广东顺德中山大学卡内基梅隆大学国际联合研究院 A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof
WO2019180586A1 (en) * 2018-03-20 2019-09-26 Sabic Global Technologies B.V. Flexible and low cost piezoelectric composites with high d33 values
CN109341843B (en) * 2018-11-08 2020-03-06 吉林大学 Micro-vibration sensor and preparation method thereof
CN109499496B (en) * 2018-12-29 2021-07-02 电子科技大学 Flexible PZT/PVDF composite piezoelectric aerogel material and preparation method thereof
CN109624488A (en) * 2019-02-28 2019-04-16 业成科技(成都)有限公司 Wire mark ejecting device
CN114577374B (en) * 2022-02-28 2023-12-29 福建工程学院 PVDF-based piezoelectric sensor and preparation method thereof
CN114953537A (en) * 2022-07-27 2022-08-30 三三智能科技(日照)有限公司 PVDF piezoelectric film tape casting process capable of controlling thickness
CN115101662A (en) * 2022-08-24 2022-09-23 三三智能科技(日照)有限公司 Piezoelectric film preparation process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692654A (en) * 1984-11-02 1987-09-08 Hitachi, Ltd. Ultrasonic transducer of monolithic array type
CN101192644A (en) * 2006-11-30 2008-06-04 中国科学院声学研究所 Sensing vibration diaphragm containing two polarization direction piezo-electric film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114851A (en) * 2009-11-30 2011-06-09 Ngk Insulators Ltd Acoustic wave element
JP2013143608A (en) * 2012-01-10 2013-07-22 Nippon Dempa Kogyo Co Ltd Resonator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692654A (en) * 1984-11-02 1987-09-08 Hitachi, Ltd. Ultrasonic transducer of monolithic array type
CN101192644A (en) * 2006-11-30 2008-06-04 中国科学院声学研究所 Sensing vibration diaphragm containing two polarization direction piezo-electric film

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"PVDF压电薄膜及其传感器的制备与性能研究";朱金海;《中国优秀硕士学位论文全文数据库信息科技辑》;20120515(第5期);正文第10页第1段至39页倒数第1段,图2-1,表2-3 *
"基于预置压电阵列的Lamb波检测技术研究";李刚等;《压电与声光》;20080630;第30卷(第3期);全文 *
"流延法制备0-3型PZT/PVDF压电复合膜的微观结构及性能";张剑等;《机械工程材料》;20120831;第36卷(第8期);全文 *

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