CN101192644A - Sensing vibration diaphragm containing two polarization direction piezo-electric film - Google Patents
Sensing vibration diaphragm containing two polarization direction piezo-electric film Download PDFInfo
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- CN101192644A CN101192644A CNA2006101442508A CN200610144250A CN101192644A CN 101192644 A CN101192644 A CN 101192644A CN A2006101442508 A CNA2006101442508 A CN A2006101442508A CN 200610144250 A CN200610144250 A CN 200610144250A CN 101192644 A CN101192644 A CN 101192644A
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Abstract
The invention relates to a sensing diaphragm for a piezoelectric film with two polarization directions, which comprises a supporting layer, a lower electrode, a piezoelectric film and an upper electrode arranged from top to bottom. The invention is characterized in that: the upper electrode comprises a first upper electrode and a second upper electrode which are separated from each other; the lower electrode is a public lower electrode; the piezoelectric film comprises a first piezoelectric film area beneath the first upper electrode and a second piezoelectric film area beneath the second electrode; the polarization direction of the first piezoelectric film area opposites to that of the second piezoelectric film area; the first upper electrode and the second upper electrode are respectively used as an imputing and outputting electrode for the whole diaphragm. The invention does not need to extract the lower electrode and avoids the etching piezoelectric process and breakdowns caused by connecting lead wires in different layers, thus increasing the yield rate of the devices; furthermore, the invention can enhance the sensitivity of the sensing diaphragm.
Description
Technical field
The invention belongs to the piezoelectric sensing field, specifically, the present invention relates to a kind of sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films.
Background technology
The silicon micro piezoelectric sensing vibration diaphragm is the transducing part of miniature piezoelectric transducer.The silicon micro piezoelectric sensing vibration diaphragm has very widely to be used, and it can carry out sensing and measurement to sound, power, pressure and quality.In the audible sound field, can be used as the reception voice signal such as acoustic sensors such as microphone, audio-switches; Also can be used as the emission voice signal such as piezoelectric speaker, hearing aids, alarm etc.In ultrasonic field, the micro acoustic piezoelectric transducer can be applied to launch ultrasonic pulse, receive the supersonic sounding signal, two dimension, 3-D supersonic imaging and measurement etc.Aspect dynamometry, the silicon micro piezoelectric vibrating membrane can be used as the measuring unit of Micro-force sensor; It also can be used as the sensing unit of mass sensor in addition, is used for the measurement of small quality.More traditional piezoelectric transducer, the transducer that contains the silicon micro piezoelectric sensing vibration diaphragm have volume little, low in energy consumption, be easy to advantages such as production in enormous quantities.
Existing silicon micro piezoelectric sensing vibration diaphragm mainly is to be made of top electrode 103, piezoelectric membrane 102, bottom electrode 101, supporting layer 100 as shown in Figure 1.Main transducing part is the sandwich structure that the piezoelectric membrane 102 of top electrode 103 and bottom electrode 101 and centre is formed.Wherein piezoelectric membrane 102 is perpendicular to the polarization of the single direction on upper/lower electrode plane, and whole polairzed area is that the piezoelectric constant of piezoelectric membrane of top electrode overlay area is certain.The mode of polarization can have two kinds, and mode one is for top electrode applies positive voltage, and mode two is for bottom electrode applies positive voltage, and as Fig. 2 and shown in Figure 4, the polarised direction of the piezoelectric membrane after the polarization is with to apply direction of an electric field consistent.Piezoelectric sensing film after the polarization has two kinds of mode of operations.First kind of pattern is receiving mode, and as Fig. 3 and shown in Figure 5, vibrating membrane can produce deformation under the effect of power, pressure, and piezoelectric membrane is because piezoelectric effect produces equal and opposite in direction, opposite polarity electric charge with its upper and lower surface, again by two electrode outputs up and down.Second kind of mode of operation is emission mode, and voltage or electric charge are applied on top electrode 103 and the bottom electrode 101, makes the electric field that produces in the piezoelectric membrane 102 perpendicular to the surface.Under electric field action, piezoelectric membrane 102 be because inverse piezoelectric effect can produce deformation, when applying specific ac voltage signal, contains the vibration that the vibrating membrane of piezoelectric membrane can produce corresponding frequencies.
The piezoelectric sensing vibrating membrane of above-mentioned silicon micro piezoelectric transducer has only single top electrode 103 and bottom electrode 101 mostly, and the shortcoming of this structure is sensing sensitivity lower (such as a patent 03809931.4).In order to solve the above problems, improve sensitivity, Chinese patent application (the application number: 200510086861.7) propose a kind of electrode structure of cutting apart that the applicant is former, it has become original unitary electrode transducer into the two or several structures of cutting apart the electrode series connection, as shown in Figure 6 and Figure 7, top electrode 103 is divided into first top electrode 104 and second top electrode 105, as shown in Figure 8, bottom electrode 101 is divided into first bottom electrode 106 and second bottom electrode 107, then second top electrode 105 and first bottom electrode 106 are connected, thereby constitute the cascaded structure of two sensing units, signal is strengthened, can significantly improve the sensitivity of microphone in theory.But still there is following shortcoming in this electrode structure of cutting apart:
(1) signal of transducer is drawn by two electrodes up and down.As shown in Figure 1 since bottom electrode be positioned at piezoelectric membrane below, this need corrode piezoelectric membrane 102 draws the bottom electrode below it.And for the piezoelectric membrane of being made up of piezoelectric ceramic (such as PZT), the etching process difficulty is big, process conditions are harsh, the time of wayward corrosion and degree; And in the etching process process, destroy easily the piezoelectricity of piezoelectric membrane, thereby make entire device lose efficacy the decrease in yield of product.
(2) cascaded structure of cutting apart electrode needs upper/lower electrode to stride layer accordingly to connect, as shown in Figure 7, second top electrode 105 will be connected with first bottom electrode 106, and bottom electrode 107 need be done and draws with output signal, because upper/lower electrode is not in same aspect, therefore step that need wire spans is certain when doing above-mentioned upper/lower electrode series connection and electrode and draw, the height of this step depends on the difference in height of upper/lower electrode, exemplary is the thickness of piezoelectric membrane 102 herein, such connection mode causes broken string easily, thereby reduces the rate of finished products of product.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, what provide that a kind of technology is simple, rate of finished products is high cuts apart series electrode type silicon micro sensing vibrating membrane.
For achieving the above object, the sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films provided by the invention is made up of from the bottom to top supporting layer, bottom electrode, piezoelectric membrane and top electrode; It is characterized in that, described top electrode comprises first top electrode and second top electrode that is separated from each other, described bottom electrode is public bottom electrode, described piezoelectric membrane comprises the first piezoelectric membrane zone that is positioned under first top electrode, with the second piezoelectric membrane zone that is positioned under second top electrode, described first piezoelectric membrane zone is opposite with the polarised direction in the second piezoelectric membrane zone, and described first top electrode and second top electrode are respectively as the input and output electrode of whole vibrating membrane.
For achieving the above object, the sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films provided by the invention is made up of from the bottom to top supporting layer, bottom electrode, piezoelectric membrane and top electrode; It is characterized in that, described top electrode comprises first top electrode and second top electrode that is separated from each other, described bottom electrode is public bottom electrode, described piezoelectric membrane comprises the first piezoelectric membrane zone that is positioned under first top electrode, with the second piezoelectric membrane zone that is positioned under second top electrode, described first piezoelectric membrane zone is opposite with the polarised direction in the second piezoelectric membrane zone; One group of described first top electrode, second top electrode, the first piezoelectric membrane zone, second piezoelectric membrane zone and public bottom electrode constitute a piezoelectric sensing unit;
Have n piezoelectric sensing unit on the described supporting layer, from first piezoelectric sensing unit, second top electrode of each piezoelectric sensing unit is electrically connected with first top electrode of next piezoelectric sensing unit, until n piezoelectric sensing unit, with polarizing voltage just, negative pole is added in respectively on second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit whole piezoelectric membrane is polarized, respectively as the input and output electrode of whole vibrating membrane, wherein n is the integer between 2～512 with second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit.
In the technique scheme, described piezoelectric membrane is the piezoelectric membrane that lead zirconate titanate (PZT) or polyvinyl fluoride polymer (PVDF) are made.
In the technique scheme, the thickness of described piezoelectric membrane is between 0.01um～300um.
In the technique scheme, described piezoelectric membrane is single thin film or is made up of plural layers.
In the technique scheme, described supporting layer is silicon nitride film, silica membrane, polysilicon membrane, silicon thin film or the composite membrane formed with upper film.
In the technique scheme, described supporting layer thickness is 0.01um～500um.
In the technique scheme, the shape of described supporting layer is rectangle or circle.
In the technique scheme, the regional polarised direction with the second piezoelectric membrane zone of described first piezoelectric membrane is opposite to be realized by the polarizing voltage positive and negative electrode being added in respectively polarize on described first top electrode and second top electrode.
In the technique scheme, have n the piezoelectric sensing unit of forming by described first top electrode, second top electrode, the first piezoelectric membrane zone, second piezoelectric membrane zone and public bottom electrode on the described supporting layer; From first piezoelectric sensing unit, second top electrode of each piezoelectric sensing unit is electrically connected with first top electrode of next piezoelectric sensing unit, until n piezoelectric sensing unit, the polarizing voltage positive and negative electrode is added in respectively on second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit whole piezoelectric membrane is polarized, with second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit respectively as the input and output electrode of whole vibrating membrane; Wherein n is the integer between 2～512.
The sensing vibration diaphragm that employing provided by the invention comprises two kinds of polarization direction piezo-electric films is a kind of novel series electrode type silicon micro sensing vibrating membrane of cutting apart.The shared bottom electrode of adjacent two sensing units in this structure has the top electrode by separately respectively, thereby constitutes pair of series piezoelectric sensing unit together above the opposite piezoelectric membrane of two polarised directions.This sense vibration membrane structure that comprises two kinds of polarization direction piezo-electric films has realized need not to draw bottom electrode with the laminar surface line, has avoided etching piezoelectric membrane technology, the fracture of avoiding different layers cross-over connection lead-in wire to cause, the rate of finished products of raising device.This structure can form the transducer of connecting on the electricity, and they are parallel-connection structures in to the sensing process of physical quantity, and the signal of being exported is all series connection sensing unit signal sums.For having single sensing vibration diaphragm that contains two kinds of polarization direction piezo-electric films to the series connection sensing unit, sensing vibration diaphragm than general single polarised direction on its sensitivity theory improves twice, and be divided into many to the time, the sensitivity that is chained together will improve 2n doubly than general structure, and wherein n is a quantity of cutting apart electrode pair.The specific implementation of this structure and more advantage will be introduced in the embodiment below in detail.
Description of drawings
Fig. 1 is the generalized section of existing list to the silicon micro piezoelectric sensing vibration diaphragm of electrode
Fig. 2 is existing piezoelectric diaphragm polarization mode one schematic diagram (arrow representative polarised direction)
Fig. 3 is the piezoelectric effect schematic diagram of existing piezoelectric diaphragm polarization mode one
Fig. 4 is existing piezoelectric diaphragm polarization mode two schematic diagrames
Fig. 5 is the piezoelectric effect schematic diagram of existing piezoelectric diaphragm polarization mode two
Fig. 6 is the existing generalized section of cutting apart series electrode type silicon micro piezoelectric sensing vibration diaphragm
Fig. 7 is the existing vertical view of cutting apart series electrode type silicon micro piezoelectric sensing vibration diaphragm
Fig. 8 is the existing electrode silicon micro piezoelectric sensing vibration diaphragm bottom electrode schematic diagram of cutting apart
Fig. 9 is the profile that contains the sensing vibration diaphragm of two kinds of polarization direction piezo-electric films of the present invention
Figure 10 is the reception work schematic diagram that contains the sensing vibration diaphragm of two kinds of polarization direction piezo-electric films of the present invention
Figure 11 is the schematic diagram after the bottom electrode preparation
Figure 12 is the generalized section after the piezoelectric membrane preparation
Figure 13 is the generalized section of cutting apart after top electrode prepares
Figure 14 is that piezoelectric membrane is through the schematic diagram (arrow representative polarised direction) after the dual polarization
Figure 15 is that list is cut apart the top electrode vertical view to circle
Figure 16 is that list is cut apart the top electrode vertical view to rectangle
The sensing vibration diaphragm that contains two kinds of polarization direction piezo-electric films that Figure 17 has two pairs of sensing units is cut apart bottom electrode schematic diagram (circle is divided into example)
Figure 18 has the sensing vibration diaphragm vertical view (circle is divided into example) that contains two kinds of polarization direction piezo-electric films of two pairs of sensing units
Embodiment
The main piezoelectric sensing of the present invention field will provide many details of embodiments more of the present invention below, be convenient to the thorough to these embodiments.
Fig. 9 be of the present invention contain two kinds of polarization direction piezo-electric films an example structure schematic diagram of sensing vibration diaphragm; Whole vibrating membrane is made up of supporting layer 100, bottom electrode 101, piezoelectric membrane 102 and first top electrode 110 that is separated from each other and second top electrode 111 that are produced on the piezoelectric membrane 102, and described piezoelectric membrane 102 comprises and is positioned at first piezoelectric membrane zone 108 under first top electrode 110 and is positioned at the second piezoelectric membrane zone 109 under first top electrode 111.In the present embodiment, supporting layer 100 preparation of sensing vibration diaphragm is on silicon chip, and this silicon chip core has the groove that through hole or opening make progress, and the peripheral part of described supporting layer 100 is all fixing, the core freedom makes vibrating membrane have the structure that deformation can take place.Certainly, the peripheral part of described supporting layer 100 also can be fixed in the mode of whole freely-supporteds, the free partial fixing of part or the free part freely-supported of part.108 and the second piezoelectric membrane zone 109, described first piezoelectric membrane zone lay respectively at first top electrode 110 and second top electrode 111 under, the polarised direction in the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone opposite (piezoelectric constant that is both is positive and negative opposite, as d33, d31) wherein.As shown in Figure 9, first top electrode 110, first piezoelectric membrane zone 108 and bottom electrode 101 constitute the independently first piezoelectric sensing unit; Second top electrode 111, second piezoelectric membrane zone 109 and bottom electrode 101 same formations are the second piezoelectric sensing unit independently.Because the bottom electrode of the first piezoelectric sensing unit and the second piezoelectric sensing unit is bottom electrode 101, promptly shared bottom electrode, therefore connect in electricity in the first piezoelectric sensing unit and the second piezoelectric sensing unit.
As shown in figure 10, when this piezoelectric sensing used for oscillation when receiving, vibrating membrane is at pressure, pressure action produces deformation down, because the polarised direction in the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone is opposite, the electric charge that is produced in top electrode 110 and top electrode 111 by piezoelectric effect is that polarity is equal-sized on the contrary, and the first piezoelectric sensing unit and the second piezoelectric sensing unit are series relationship in electricity, therefore output signal is the signal sum that the first piezoelectric sensing unit and the second piezoelectric sensing unit produce, output voltage than single piezoelectric sensing unit will be twice, and the sensitivity that contains the transducer of this kind sensing vibration diaphragm accordingly also doubles.When the sensor application of this structure during in the emission mode of operation, on first top electrode 110 and second top electrode 111, apply certain voltage, because electricity series relationship, voltage will be applied to the first piezoelectric sensing unit and the two ends, the second piezoelectric sensing unit that are cascaded in turn, direction of an electric field in the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone is reverse, because the polarised direction in the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone is also opposite, the then first piezoelectric sensing unit and the second piezoelectric sensing unit deformation that under effect of electric field, will produce equidirectional and form, make whole piezoelectric film deformation unanimity, under specific AC signal, vibrating membrane will vibrate by certain frequency, thus the function that realization transmits.
Figure 11～Figure 14 shows the basic preparation flow of this example.As shown in figure 11, at first prepare supporting layer 100, this supporting layer 100 can be silicon nitride film, silica membrane, polysilicon membrane, silicon thin film or the composite membrane formed with upper film, be appreciated that, this tunic structure is mainly used in the support of piezoelectric membrane and auxiliary vibration, those skilled in the art can select the film of different materials as required with process conditions, but not only limits to above-mentioned several film.The thickness of described supporting layer is 0.01um～500um.The shape that need to prove supporting layer can be a rectangle, also can be round, can be random geometry also, is not limited to the scope that this example is introduced, those skilled in the art can choose difform vibrating membrane as required, and takes corresponding preparation method.
Still by the bottom electrode 101 that on supporting layer 100, prepares shown in Figure 11, this bottom electrode 101 adopts aluminium (Al) film, chromium (Cr) film, gold (Au) film or platinum (Pt) film production, also can adopt the alloy firm that constitutes by above metal material, or make by the laminated film that above metallic film constitutes.
By one deck or which floor piezoelectric membrane 102 of preparing on bottom electrode 101 shown in Figure 12, the thickness of this piezoelectric membrane is 0.01um～300um, can be single thin film, also can be made up of plural layers.This piezoelectric membrane can be lead zirconate titanate (PZT) piezoelectric membrane or monocrystalline, polyvinyl fluoride polymer (PVDF) piezoelectric membrane or monocrystalline or other suitable replacement piezoelectric, promptly this material can realize that the polarised direction of zones of different can different get final product, and those skilled in the art also can make one's options according to actual needs.
Polarization described in the present invention is meant that for piezoceramics film, itself does not have piezoelectric property, such piezoelectric membrane is applied strong DC electric field after, can make it have piezoelectric property.Under this electric field polarization mode, the polarised direction of piezoelectric membrane is identical with direction of an electric field.The piezoelectric property of piezoelectric membrane is by its piezoelectric constant, as d33, d31, determine.The piezoelectric effect of describing is meant when some crystal prolongs certain orientation elongation or compression, can produce electric charge (bound charge) in its surface, and its what and polarity that produces electric charge is decided by the piezoelectric constant of material, as d33, and d31.
As shown in figure 13: top electrode is cut apart in preparation on piezoelectric membrane 102: first top electrode 110 and second top electrode 111, top electrode can adopt aluminium (Al) film, chromium (Cr) film, gold (Au) film or platinum (Pt) film production, also can adopt the alloy firm that constitutes by above metal material, or make by the laminated film that above metallic film constitutes.As Figure 15 and first top electrode 110 shown in Figure 16 and second top electrode 111 can be cut apart for rectangle, also can be that fan-segmentation, annular are cut apart.Be appreciated that, what emphasize here is that the top electrode that will be used for piezoelectric membrane 102 tops of sensing is divided into two parts, and the shape of two parts electrode that is partitioned into is not limited only to top explanation, and those skilled in the art can carry out cutting apart in pairs of top electrode according to required shape.
As shown in figure 14, the piezoelectric membrane 102 of this structure is carried out the polarization of two kinds of directions, make piezoelectric membrane 102 form two 108 and second piezoelectric membrane zones 109, first piezoelectric membrane zone that polarised directions are opposite.Can be chosen in the air, temperature range can be at-160 ℃ to 400 ℃, and the optimum polarization temperature is 100 ℃.Also can be chosen in the oil and polarize, temperature range can be at-160 ℃ to 400 ℃, and the optimum polarization temperature is 100 ℃.The polarizing voltage positive pole is added on first top electrode 110, negative pole is added on second top electrode 111, or the polarizing voltage negative pole is added on first top electrode 110 and positive pole is added on second electrode 111, here be example with the former, because having the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone of common bottom electrode 101 connects on electricity, therefore the direction of an electric field of 109 inside, first piezoelectric membrane zone, 108 and second piezoelectric membrane zone is opposite, because the polarised direction of piezoelectric membrane is identical with its inner direction of an electric field, then the polarised direction in the first piezoelectric membrane zone 108 is opposite with the polarised direction in the second piezoelectric membrane zone 109, promptly the piezoelectric constant in the 108 and second piezoelectric membrane zone 109, first piezoelectric membrane zone is (as d33, d31) opposite in sign, as shown in figure 14.Or first piezoelectric membrane zone, 108 and second piezoelectric membrane zone 109 is formed opposite polarised direction with other method, as realize the opposite method of polarised direction of piezoelectric membrane zones of different by the concentration adjustment of the compound piezoelectric being carried out certain element, the methods such as piezoelectric membrane in the opposite crystal orientation of preparation growth here can not be exhaustive.Those skilled in the art will appreciate that two kinds of directions that adopted need the different polarised direction that adopts according to the different piezoelectric that is adopted, and be not limited only to above-described method, can make one's options according to actual needs.
Embodiment 2
Identical with embodiment 1, preparation supporting layer 100 and bottom electrode 101.Here different is as shown in figure 17, bottom electrode 101 is divided into first bottom electrode 112 and second bottom electrode 113.Prepare piezoelectric membrane 102 at first bottom electrode 112 with above second bottom electrode 113.As shown in figure 18, preparation top electrode and be divided into first top electrode 114, second top electrode 115, the 3rd top electrode 116 and 117 4 parts of the 4th top electrode.Piezoelectric membrane below first top electrode 114, second top electrode 115, the 3rd top electrode 116 and the 4th top electrode 117 regions corresponds to the first piezoelectric membrane zone 118, the second piezoelectric membrane zone 119, the 120 and the 4th piezoelectric membrane zone 121, the 3rd piezoelectric membrane zone.Such first top electrode 114, second top electrode 115, the first piezoelectric membrane zone 118, second piezoelectric membrane zone, the 119 and first public bottom electrode 112 constitute first pair of piezoelectric sensing unit, and the 3rd top electrode 116, the 4th top electrode 117, the 3rd piezoelectric membrane zone 120, the 4th piezoelectric membrane the zone 121 and second public bottom electrode 113 constitute second pair of piezoelectric sensing unit.
With these two pairs of piezoelectric sensing unit by connecting second top electrode 115 and the 3rd top electrode 116 is cascaded, thereby realized the series connection of two pairs of piezoelectric sensing unit, promptly formed the series connection of four piezoelectric sensing unit.The piezoelectric sensing vibrating membrane that is together in series like this makes acknowledge(ment) signal increase 4 times, so the sensitivity of transducer also is 4 times of existing structure.
When realizing n to the situation of piezoelectric sensing unit on the sensing vibration diaphragm that contains two polarization direction piezo-electric films in the present invention, n is 2 to 512, needs bottom electrode is divided into the n piece, the corresponding 2n piece that is divided into of top electrode.Cut apart public one of per two top electrodes in back and cut apart bottom electrode, two piezoelectric membranes below public one two top electrodes cutting apart bottom electrode are polarized to rightabout, even their piezoelectric constant opposite in sign.So just constitute n to the series connection sensing unit.Again every pair of series connection sensing unit is together in series just to have constituted again and has the sensing vibration diaphragm that contain two polarization direction piezo-electric films of n the piezoelectric sensing unit.On the sensitivity theory of this sensing vibration diaphragm be single polarised direction piezoelectric transducer 2n doubly.
Claims (9)
1. a sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films is made up of from the bottom to top supporting layer, bottom electrode, piezoelectric membrane and top electrode; It is characterized in that, described top electrode comprises first top electrode and second top electrode that is separated from each other, described bottom electrode is public bottom electrode, described piezoelectric membrane comprises the first piezoelectric membrane zone that is positioned under first top electrode, with the second piezoelectric membrane zone that is positioned under second top electrode, described first piezoelectric membrane zone is opposite with the polarised direction in the second piezoelectric membrane zone, and described first top electrode and second top electrode are respectively as the input and output electrode of whole vibrating membrane.
2. a sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films is made up of from the bottom to top supporting layer, bottom electrode, piezoelectric membrane and top electrode; It is characterized in that, described top electrode comprises first top electrode and second top electrode that is separated from each other, described bottom electrode is public bottom electrode, described piezoelectric membrane comprises the first piezoelectric membrane zone that is positioned under first top electrode, with the second piezoelectric membrane zone that is positioned under second top electrode, described first piezoelectric membrane zone is opposite with the polarised direction in the second piezoelectric membrane zone; One group of described first top electrode, second top electrode, the first piezoelectric membrane zone, second piezoelectric membrane zone and public bottom electrode constitute a piezoelectric sensing unit;
Have n piezoelectric sensing unit on the described supporting layer, from first piezoelectric sensing unit, second top electrode of each piezoelectric sensing unit is electrically connected with first top electrode of next piezoelectric sensing unit, until n piezoelectric sensing unit, with polarizing voltage just, negative pole is added in respectively on second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit whole piezoelectric membrane is polarized, respectively as the input and output electrode of whole vibrating membrane, wherein n is the integer between 2～512 with second top electrode of first top electrode of first piezoelectric sensing unit and n piezoelectric sensing unit.
3. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that described piezoelectric membrane is the piezoelectric membrane that lead zirconate titanate or polyvinyl fluoride polymer are made.
4. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that the thickness of described piezoelectric membrane is between 0.01um～300um.
5. by the described sensing vibration diaphragm that comprises two kinds of polarization direction piezo-electric films of claim 4, it is characterized in that described piezoelectric membrane is single thin film or is made up of plural layers.
6. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that described supporting layer is silicon nitride film, silica membrane, polysilicon membrane, silicon thin film or the composite membrane formed with upper film.
7. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that described supporting layer thickness is 0.01um～500um.
8. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that the shape of described supporting layer is rectangle or circle.
9. by claim 1 or the 2 described sensing vibration diaphragms that comprise two kinds of polarization direction piezo-electric films, it is characterized in that the regional polarised direction with the second piezoelectric membrane zone of described first piezoelectric membrane is opposite to be realized by the polarizing voltage positive and negative electrode being added in respectively polarize on described first top electrode and second top electrode.
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|---|---|---|---|---|
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| CN103682080A (en) * | 2013-11-25 | 2014-03-26 | 北京航空航天大学 | Manufacturing method of locally-polarized piezoelectric film sensor |
| CN105375813A (en) * | 2014-08-13 | 2016-03-02 | 精工爱普生株式会社 | Piezoelectric driving device and driving method thereof, robot and driving method thereof |
| US10603009B2 (en) | 2015-05-28 | 2020-03-31 | Seiko Epson Corporation | Piezoelectric device, probe, electronic apparatus, and ultrasonic imaging apparatus |
| EP3097987A1 (en) * | 2015-05-28 | 2016-11-30 | Seiko Epson Corporation | Ultrasonic imaging apparatus including a piezoelectric element with a piezoelectric film and a vibrating film |
| US11440052B2 (en) | 2016-05-04 | 2022-09-13 | Invensense, Inc. | Two-dimensional array of CMOS control elements |
| US11651611B2 (en) | 2016-05-04 | 2023-05-16 | Invensense, Inc. | Device mountable packaging of ultrasonic transducers |
| US11471912B2 (en) | 2016-05-10 | 2022-10-18 | Invensense, Inc. | Supplemental sensor modes and systems for ultrasonic transducers |
| US11626099B2 (en) | 2016-05-10 | 2023-04-11 | Invensense, Inc. | Transmit beamforming of a two-dimensional array of ultrasonic transducers |
| US11288891B2 (en) | 2016-05-10 | 2022-03-29 | Invensense, Inc. | Operating a fingerprint sensor comprised of ultrasonic transducers |
| US11673165B2 (en) | 2016-05-10 | 2023-06-13 | Invensense, Inc. | Ultrasonic transducer operable in a surface acoustic wave (SAW) mode |
| CN107399165A (en) * | 2016-05-20 | 2017-11-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of piezo jets for improving shearing deformation quantity and preparation method thereof |
| CN107764392A (en) * | 2016-08-17 | 2018-03-06 | 英飞凌科技股份有限公司 | Sonic sensor |
| US10684163B2 (en) | 2016-08-17 | 2020-06-16 | Infineon Technologies Ag | Acoustic wave sensor |
| US11301077B2 (en) | 2016-11-17 | 2022-04-12 | Beijing Taifang Technology Co., Ltd | Piezoelectric sensing apparatus and applications thereof |
| CN106449966A (en) * | 2016-11-17 | 2017-02-22 | 北京钛方科技有限责任公司 | Piezoelectric sensing device and application |
| CN106584842A (en) * | 2017-02-10 | 2017-04-26 | 南京航空航天大学金城学院 | Printing head assembly of 3D printer |
| CN110546776B (en) * | 2017-04-17 | 2023-04-18 | 锐迪科微电子（上海）有限公司 | MEMS piezoelectric transducer for optimizing capacitance shape |
| CN110546776A (en) * | 2017-04-17 | 2019-12-06 | 锐迪科微电子（上海）有限公司 | MEMS piezoelectric transducer for optimizing capacitance shape |
| CN109222917B (en) * | 2017-07-10 | 2022-04-26 | 中国科学院微电子研究所 | Pulse wave sensor, sensor array and pulse wave measuring method |
| CN109222917A (en) * | 2017-07-10 | 2019-01-18 | 中国科学院微电子研究所 | Pulse wave sensor, sensor array and pulse wave measurement method |
| CN108470823A (en) * | 2018-04-12 | 2018-08-31 | 中国电子科技集团公司第四十九研究所 | A kind of high-voltage electricity polar system for macromolecule membrane |
| CN108847824A (en) * | 2018-06-19 | 2018-11-20 | 无锡晶哲科技有限公司 | A kind of method for generating sine wave signal and piezoelectric device and sine-wave generator based on this method |
| CN108847824B (en) * | 2018-06-19 | 2023-03-14 | 无锡晶哲科技有限公司 | Method for generating sine wave signal, piezoelectric device based on method and sine wave generator |
| CN113366763A (en) * | 2019-01-31 | 2021-09-07 | 株式会社村田制作所 | Elastic wave device |
| CN109602423B (en) * | 2019-02-01 | 2023-11-03 | 清华大学深圳研究生院 | Wearable device for preventing diabetic foot |
| CN109602423A (en) * | 2019-02-01 | 2019-04-12 | 清华大学深圳研究生院 | It is a kind of for preventing the wearable device of diabetes |
| CN110105089A (en) * | 2019-05-10 | 2019-08-09 | 济南大学 | Using TiO2/SiO2The method and its application that laminated film is modified piezoelectric ceramics surface |
| US20200367858A1 (en) * | 2019-05-20 | 2020-11-26 | Invensense, Inc. | Dual layer ultrasonic transducer |
| US11232549B2 (en) | 2019-08-23 | 2022-01-25 | Invensense, Inc. | Adapting a quality threshold for a fingerprint image |
| US11392789B2 (en) | 2019-10-21 | 2022-07-19 | Invensense, Inc. | Fingerprint authentication using a synthetic enrollment image |
| US11460957B2 (en) | 2020-03-09 | 2022-10-04 | Invensense, Inc. | Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness |
| US11328165B2 (en) | 2020-04-24 | 2022-05-10 | Invensense, Inc. | Pressure-based activation of fingerprint spoof detection |
| CN113364423A (en) * | 2021-05-27 | 2021-09-07 | 天津大学 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
| CN113364423B (en) * | 2021-05-27 | 2023-11-10 | 广州乐仪投资有限公司 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
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