CN110560352B - Frequency-adjustable ultrasonic sensor array based on Helmholtz resonant cavity - Google Patents
Frequency-adjustable ultrasonic sensor array based on Helmholtz resonant cavity Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
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- 239000000463 material Substances 0.000 description 3
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- 238000003491 array Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 2
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- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000026683 transduction Effects 0.000 description 2
- 238000010361 transduction Methods 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0603—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a piezoelectric bender, e.g. bimorph
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
- B06B1/0611—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile
- B06B1/0618—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile of piezo- and non-piezoelectric elements, e.g. 'Tonpilz'
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B3/00—Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
Abstract
The invention relates to a frequency-adjustable ultrasonic sensor array based on a Helmholtz resonant cavity, which comprises a substrate, an ultrasonic transmitting device and a sound wave receiving device, wherein the ultrasonic transmitting device and the sound wave receiving device are arranged on the substrate, and the sound wave receiving device comprises an acoustic sensor and the Helmholtz resonant cavity arranged on the acoustic sensor. According to the invention, the ultrasonic transmitting device and the ultrasonic receiving device are arranged on the same wafer, the resonance frequencies of the acoustic sensor in the ultrasonic transmitting device and the Helmholtz resonant cavity in the acoustic wave receiving device are consistent, and the resonance frequency of the acoustic sensor in the acoustic wave receiving device is higher or lower than the resonance frequencies of the acoustic sensor and the Helmholtz resonant cavity, so that crosstalk between array units can be avoided.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a frequency-adjustable ultrasonic sensor array based on a Helmholtz resonant cavity.
Background
An ultrasonic transducer is a transducing element that can be used to both transmit and receive ultrasonic waves, which is the core of an acoustic sensor. When the transducer works in a transmitting mode, electric energy is converted into vibration of the transducer through electrostatic force or inverse piezoelectric effect so as to radiate sound waves outwards; when the transducer works in a receiving mode, sound pressure acts on the surface of the transducer to enable the transducer to vibrate, and the transducer converts the vibration into an electric signal. At present, the most widely used ultrasonic sensor is mainly based on a piezoelectric transducer, the piezoelectric transducer mainly utilizes a thickness vibration mode of piezoelectric ceramics to generate ultrasonic waves, and because the resonant frequency of the thickness mode is only related to the thickness of the transducer, the ultrasonic transducers with different resonant frequencies are difficult to manufacture on the same plane. When the high-frequency-resistant high-frequency. The ultrasonic transducer (MEMS ultrasonic transducer) manufactured by the micromachining technology vibrates in a bending mode, has a vibrating membrane with lower rigidity, has lower acoustic impedance, and can be better coupled with gas and liquid. And the resonant frequency is controlled by the in-plane dimension, so that the requirement on the machining precision is low. With the gradual maturity of the MEMS ultrasonic transducer technology, the technology of the ultrasonic sensor tends to turn to the MEMS ultrasonic transducer because of its advantages of high performance, low cost and easy realization of mass production. The MEMS ultrasonic transducer mainly comprises two capacitance type (cMUT) and piezoelectric type (pMUT), the sensitivity of the pMUT is slightly lower than that of the cMUT, but the cMUT needs to provide bias voltage and a tiny air gap is arranged between capacitance polar plates, adhesion is easily formed, and the pMUT has the advantages of simple structure and high transduction efficiency of transduction materials, but the manufacture of the pMUT is more complex.
Patent CN109196671A discloses a piezoelectric micromachined ultrasonic transducer (pMUT) that reduces acoustic diffraction by adding a high acoustic velocity material to the transducer to generate high frequencies. The PMUT has a low quality factor, providing shorter start-up and shut-down times, to enable better suppression of spurious reflections through time-gating. Patent CN107394036A discloses an electrode configuration of pMUT and pMUT transducer arrays, which makes the transducer have different modes of action by using a dual electrode or multiple electrodes in the upper electrode, by applying the same or different electrical signals to the different electrodes. Patent CN106660074A discloses a piezoelectric ultrasonic transducer and a process, which uses an anchoring structure and a mechanical layer to form a cavity, adjusts the position of the central axis of the stacked layers through the mechanical layer, thereby allowing the stacked layers to vibrate in bending, and adjusts the parameters of resonance frequency, quality factor Q, etc. through the use of a concave portion. Overall, the current pMUT improvements are mainly directed to the electrode shape thereof, the addition of materials to the outside, and the like, but have a limited effect on improving the pMUT energy conversion efficiency.
Patent CN103240220B discloses a piezoelectric array ultrasonic transducer, which adopts the arrangement of common lower electrode and array upper electrode to make the vibrating membrane and piezoelectric membrane at the bottom of each array element have the same or different thickness, so that the array elements can work under the same or different working frequencies. Patent CN108284054A discloses a piezoelectric ceramic ultrasonic linear phased array transducer and a preparation method thereof, and a transducer array with high resolution and large detection depth is prepared by technologies such as array cutting, thinning, micro-machining electrode deposition, patterning and the like. The existing sensor array has a serious crosstalk problem, and as the resonance frequencies of the sensors at the transmitting end and the receiving end are close, the receiving end inevitably generates interference electric signals when transmitting ultrasonic waves, so that the performance of the sensor array is influenced; in addition, each array element in the array operates at the same operating frequency, the bandwidth is narrow, and the sensitivity of the sensor array needs to be improved.
Generally, the receiving unit of the sensor array has the defects of low sensitivity, low sound-electricity energy conversion efficiency, non-adjustable frequency and the like, and the sensor array has the limitations of serious crosstalk, narrow bandwidth and the like.
Disclosure of Invention
The invention aims to provide a frequency-adjustable ultrasonic sensor array based on a Helmholtz resonant cavity, which has high sensitivity and high acoustoelectric energy conversion efficiency and can avoid crosstalk among array units.
The scheme adopted by the invention for solving the technical problems is as follows:
the utility model provides an adjustable frequency ultrasonic sensor array based on Helmholtz resonant cavity, includes the substrate, lays ultrasonic emission device and sound wave receiving arrangement on the substrate, sound wave receiving arrangement includes acoustic sensor and sets up Helmholtz resonant cavity on the acoustic sensor.
Further, the resonance frequency of the ultrasonic transmitting device is consistent with the resonance frequency of the Helmholtz resonant cavity, and the resonance frequency of the acoustic sensor in the acoustic wave receiving device is different from the resonance frequencies of the ultrasonic transmitting device and the Helmholtz resonant cavity.
Further, the Helmholtz resonant cavity comprises a cavity and a through hole communicated with the cavity, and is arranged on the acoustic sensor, and the cavity is in contact connection with the surface of the acoustic sensor.
Further, the cavity is formed by enclosing a hollow silicon structure arranged on the surface of the acoustic sensor and the surface of the acoustic sensor, and the through hole is arranged on the silicon structure.
Further, the size, number, shape and position of the through holes are determined by the resonance frequency of the Helmholtz resonant cavity.
Further, the acoustic sensor is a piezoelectric ultrasonic transducer or a capacitive ultrasonic transducer.
Further, the piezoelectric ultrasonic transducer is of a sandwich structure or a bimorph structure.
Compared with the prior art, the invention has at least the following beneficial effects:
1) the MEMS acoustic sensor and the Helmholtz resonant cavity are combined to form an array acoustic wave receiving unit; when the sound wave receiving device receives the emission echo, the frequency of the sound wave can be set to be consistent with the resonance frequency of the Helmholtz resonant cavity in advance, the sound wave is transmitted to the through hole to cause the medium in the cavity to resonate and consume the sound wave energy of the resonance frequency, so that the sound pressure in the cavity is increased, the sound pressure acting on the surface of the MEMS acoustic sensor is improved, and the electric signal generated by the MEMS acoustic sensor is increased;
2) the invention realizes the adjustment of the resonance frequency of the Helmholtz resonant cavity by adjusting the size, shape and position of the through hole formed on the silicon structure;
3) the ultrasonic transmitting device and the sound wave receiving device are arranged on the same wafer, the resonance frequency of the acoustic sensor in the ultrasonic transmitting device is consistent with that of the Helmholtz resonant cavity in the sound wave receiving device, and the resonance frequency of the acoustic sensor in the sound wave receiving device is higher or lower than that of the acoustic sensor in the sound wave receiving device, so that crosstalk between array units can be avoided.
Drawings
FIG. 1 is a cross-sectional view of an array structure in accordance with an embodiment of the present invention, in which only one transmitting unit and only one receiving unit are arranged;
FIG. 2 shows an arrangement of arrays according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a receiving unit with a sandwich structure according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a receiving unit with an electrode of a sandwich structure according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a receiver unit employing bimorph lead-out electrodes in accordance with an embodiment of the present invention;
fig. 6 is a cross-sectional view of a receiving unit using a capacitive ultrasonic transducer according to an embodiment of the present invention.
Detailed Description
The following examples are provided to further illustrate the present invention for better understanding, but the present invention is not limited to the following examples.
Referring to fig. 1 and 2, the present invention provides a tunable ultrasonic transducer array based on a Helmholtz resonant cavity, which includes a substrate 1, an ultrasonic transmitter 2 disposed on the substrate 1, and a sound receiver 3. In this embodiment, the ultrasonic transmitter 2 and the acoustic wave receiver 3 are disposed on the same wafer, and the two devices may be disposed in any manner, and the number, the spacing, and the arrangement of the two devices may be selected according to specific situations. The ultrasonic emission device 2 is also flexible to select, and can be a piezoelectric ultrasonic transducer or a capacitive ultrasonic transducer. The acoustic wave receiving device 3 includes a MEMS acoustic sensor 30 and a Helmholtz resonator 31 disposed on the MEMS acoustic sensor 30, wherein the MEMS acoustic sensor 30 is for receiving acoustic pressure generated when the Helmholtz resonator 31 resonates. The MEMS acoustic sensor 30 can also take various forms, as shown collectively in fig. 3-6, and the MEMS acoustic sensor 30 can be either a piezoelectric or a capacitive ultrasonic transducer, or any other form of ultrasonic transducer. When the MEMS acoustic sensor 30 is a piezoelectric ultrasonic transducer, it may be a conventional sandwich structure or a bimorph structure. Of course, the shape of the MEMS acoustic sensor 30 can also be in various forms, such as circular, square, rectangular, hexagonal, or other polygonal shapes.
The Helmholtz resonator 31 includes a hollow silicon structure 310 disposed on a surface of the MEMS acoustic sensor 30, a cavity 311 formed by the hollow silicon structure 310 and the surface of the MEMS acoustic sensor 30, and a through hole 312 disposed on the silicon structure 310 and communicating with the cavity 311. The through hole 312 communicates the external atmosphere with the cavity 311, thereby facilitating the propagation and resonance of the acoustic wave. In addition, the cavity 311 is in contact connection with the surface of the MEMS acoustic sensor 30, so that the sound pressure amplified by the Helmholtz resonator 31 can directly act on the MEMS acoustic sensor 30, which is beneficial to improving the acoustoelectric energy conversion efficiency of the acoustic sensor.
In the present invention, in order to avoid crosstalk between array units, the resonance frequencies of the acoustic sensors in the ultrasonic transmission device 2 and the Helmholtz resonator 31 in the acoustic wave receiving device 3 are the same, and the resonance frequency of the MEMS acoustic sensor 30 in the acoustic wave receiving device 3 is higher or lower than the resonance frequencies of the acoustic sensors in the ultrasonic transmission device 2 and the Helmholtz resonator 31, so that crosstalk between array units can be avoided. The MEMS acoustic sensor 30 in the acoustic wave receiving device 3 is configured to receive an acoustic wave in the cavity when the Helmholtz resonant cavity 31 resonates, and when the frequency of the acoustic wave is consistent with the resonant frequency of the Helmholtz resonant cavity 31 when the transmitted ultrasonic echo is received, the acoustic wave propagates to the through hole 312 to cause the medium in the cavity 311 to resonate and consume the acoustic wave energy of the resonant frequency, so as to increase the acoustic pressure in the cavity, and the amplified acoustic pressure acts on the surface of the MEMS acoustic sensor 30 in the receiving device, so as to improve the acoustic-electric energy conversion efficiency of the acoustic sensor.
According to the formula of the resonance frequency of the Helmholtz resonant cavity:
in the formula, c is the sound velocity in the medium, S is the area of the through hole, t is the height of the through hole, d is the diameter of the through hole, and V is the volume of the cavity. Based on the above formula, we can adjust the resonant frequency of the Helmholtz resonant cavity 31 by adjusting the size, number, shape and arrangement position of the through holes 312. That is, in practical use, the size, number, shape and arrangement position of the through holes 312 are determined according to the required resonance frequency of the Helmholtz resonant cavity 31. For example, when the resonance frequency of the Helmholtz resonator 31 is required to coincide with the resonance frequency of the acoustic wave, the size, number, arrangement position, and the like of the through holes 312 may be determined according to the resonance frequency of the acoustic wave.
While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (5)
1. The frequency-adjustable ultrasonic sensor array based on the Helmholtz resonant cavity is characterized by comprising a substrate, an ultrasonic transmitting device and a sound wave receiving device, wherein the ultrasonic transmitting device and the sound wave receiving device are arranged on the substrate, the sound wave receiving device comprises an MEMS (micro electro mechanical System) acoustic sensor and the Helmholtz resonant cavity arranged on the MEMS acoustic sensor, the ultrasonic transmitting device and the MEMS acoustic sensor are both piezoelectric ultrasonic transducers, the resonant frequency of the ultrasonic transmitting device is consistent with that of the Helmholtz resonant cavity, and the resonant frequency of the MEMS acoustic sensor in the MEMS sound wave receiving device is different from that of the ultrasonic transmitting device and the Helmholtz resonant cavity.
2. The Helmholtz-resonator-based tunable ultrasonic sensor array of claim 1, wherein the Helmholtz resonator comprises a cavity and a through hole communicating with the cavity, the Helmholtz resonator is disposed on the acoustic sensor and the cavity is in contact connection with a surface of the acoustic sensor.
3. The Helmholtz-resonator-based tunable ultrasonic sensor array of claim 2, wherein the cavity is formed by a hollow silicon structure disposed on the surface of the acoustic sensor and the surface of the MEMS acoustic sensor, the through-hole being disposed on the silicon structure.
4. The Helmholtz-resonator-based tunable ultrasonic sensor array of claim 3, wherein the size, number, shape and location of the through holes are determined by the resonant frequency of the Helmholtz resonator.
5. The Helmholtz-resonator-based tunable ultrasonic sensor array of claim 1, wherein the piezoelectric ultrasonic transducer is a sandwich structure or a bimorph structure.
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| CN111001553B (en) * | 2019-12-18 | 2021-01-26 | 武汉大学 | Tunable ultrasonic sensor array |
| JP7424069B2 (en) * | 2020-01-21 | 2024-01-30 | セイコーエプソン株式会社 | Ultrasonic devices and sensors |
| TWI763270B (en) * | 2021-01-21 | 2022-05-01 | 茂丞科技股份有限公司 | Array-typed ultrasonic sensor |
| CN114160399B (en) * | 2021-12-02 | 2022-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Piezoelectric ultrasonic transducer with same frequency and different structures and preparation method thereof |
| CN115532572A (en) * | 2022-10-14 | 2022-12-30 | 浙江大学 | Multi-frequency piezoelectric micro-mechanical ultrasonic transducer and preparation method thereof |
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| US6585653B2 (en) * | 2001-07-31 | 2003-07-01 | Koninklijke Philips Electronics N.V. | Micro-machined ultrasonic transducer (MUT) array |
| US9061320B2 (en) * | 2012-05-01 | 2015-06-23 | Fujifilm Dimatix, Inc. | Ultra wide bandwidth piezoelectric transducer arrays |
| US9660170B2 (en) * | 2012-10-26 | 2017-05-23 | Fujifilm Dimatix, Inc. | Micromachined ultrasonic transducer arrays with multiple harmonic modes |
| CN103240220B (en) * | 2013-05-09 | 2015-06-17 | 电子科技大学 | Piezoelectric array ultrasonic transducer |
| US9067779B1 (en) * | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
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