CN103681977A - 一种提高GaN-LED出光稳定性的低损伤图形衬底的制备方法 - Google Patents
一种提高GaN-LED出光稳定性的低损伤图形衬底的制备方法 Download PDFInfo
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- CN103681977A CN103681977A CN201210338323.2A CN201210338323A CN103681977A CN 103681977 A CN103681977 A CN 103681977A CN 201210338323 A CN201210338323 A CN 201210338323A CN 103681977 A CN103681977 A CN 103681977A
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- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000001039 wet etching Methods 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 58
- 239000010980 sapphire Substances 0.000 claims description 58
- 238000002360 preparation method Methods 0.000 claims description 19
- 230000008020 evaporation Effects 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000007796 conventional method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 2
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
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Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210338323.2A CN103681977B (zh) | 2012-09-13 | 2012-09-13 | 一种提高GaN-LED出光稳定性的低损伤图形衬底的制备方法 |
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Application Number | Priority Date | Filing Date | Title |
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CN201210338323.2A CN103681977B (zh) | 2012-09-13 | 2012-09-13 | 一种提高GaN-LED出光稳定性的低损伤图形衬底的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103681977A true CN103681977A (zh) | 2014-03-26 |
CN103681977B CN103681977B (zh) | 2016-07-20 |
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CN201210338323.2A Active CN103681977B (zh) | 2012-09-13 | 2012-09-13 | 一种提高GaN-LED出光稳定性的低损伤图形衬底的制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112967986A (zh) * | 2020-10-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种转移构件及其制备方法、转移头 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635519B2 (en) * | 2002-01-10 | 2003-10-21 | Agere Systems, Inc. | Structurally supported thin film resonator and method of fabrication |
CN1700449A (zh) * | 2004-05-18 | 2005-11-23 | 中国科学院物理研究所 | 一种湿法腐蚀蓝宝石图形衬底的方法 |
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2012
- 2012-09-13 CN CN201210338323.2A patent/CN103681977B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635519B2 (en) * | 2002-01-10 | 2003-10-21 | Agere Systems, Inc. | Structurally supported thin film resonator and method of fabrication |
CN1700449A (zh) * | 2004-05-18 | 2005-11-23 | 中国科学院物理研究所 | 一种湿法腐蚀蓝宝石图形衬底的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112967986A (zh) * | 2020-10-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种转移构件及其制备方法、转移头 |
CN112967986B (zh) * | 2020-10-19 | 2022-06-21 | 重庆康佳光电技术研究院有限公司 | 一种转移构件及其制备方法、转移头 |
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Publication number | Publication date |
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CN103681977B (zh) | 2016-07-20 |
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Effective date of registration: 20200918 Address after: Wujiang District of Suzhou City, Jiangsu province 215200 Lili town Yuexiu Road No. 888 Patentee after: JIANGSU YONGDING COMMUNICATIONS Co.,Ltd. Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. |
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Effective date of registration: 20221213 Address after: 215000 north side of luxui section, 74k, 318 National Road, Lili Town, Wujiang District, Suzhou City, Jiangsu Province Patentee after: Jiangsu Etern Co.,Ltd. Patentee after: JIANGSU YONGDING COMMUNICATIONS Co.,Ltd. Address before: 215200 Yuexiu Road 888, Lili Town, Wujiang District, Suzhou City, Jiangsu Province Patentee before: JIANGSU YONGDING COMMUNICATIONS Co.,Ltd. |
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